CN109713132B - Thin film solar cell and preparation method thereof - Google Patents
Thin film solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN109713132B CN109713132B CN201811642362.5A CN201811642362A CN109713132B CN 109713132 B CN109713132 B CN 109713132B CN 201811642362 A CN201811642362 A CN 201811642362A CN 109713132 B CN109713132 B CN 109713132B
- Authority
- CN
- China
- Prior art keywords
- transparent electrode
- layer
- solar cell
- transparent
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a thin film solar cell and a preparation method thereof. The light absorption of the transparent electrode can be inhibited by arranging the groove in the cell, and meanwhile, obvious resistive loss can not be caused, so that the sunlight utilization rate can be improved, and the energy conversion efficiency of the cell can be improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a thin film solar cell and a preparation method thereof.
Background
At present, the perovskite solar cell attracts wide attention as a novel high-efficiency thin-film solar cell, the light absorption layer of the perovskite solar cell is a thin-film light absorption layer, the perovskite solar cell can be easily prepared and obtained through a solution coating method, most of procedures in the manufacturing process can be carried out under the low-temperature condition, and then the flexible perovskite solar cell can be prepared and obtained. In addition, it is reported that the energy conversion efficiency can be higher than 20%, but the energy conversion efficiency of the solar cell is still low at present, and how to further improve the energy conversion efficiency of the solar cell is still the focus of research in the industry.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. To this end, it is an object of the present invention to propose a thin film solar cell which can effectively reduce the light loss without causing significant resistive losses.
In one aspect of the invention, the invention provides a thin film solar cell. According to the embodiment of the invention, the thin film solar cell comprises a transparent electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode which are sequentially stacked, wherein the transparent electrode is provided with a plurality of grooves which are arranged at intervals. Therefore, the light absorption of the transparent electrode can be inhibited by arranging the groove, and meanwhile, obvious resistive loss can not be caused, so that the sunlight utilization rate can be improved, and the energy conversion efficiency of the cell can be improved.
In another aspect of the invention, the invention provides a thin film solar cell. According to the embodiment of the invention, the thin film solar cell comprises a buffer layer, a transparent electrode, a perovskite light absorption layer, a charge transmission layer and a metal electrode which are sequentially stacked, wherein the transparent electrode is provided with a plurality of grooves which are arranged at intervals. The thickness of the partial transparent electrode can be reduced by arranging the groove in the thin-film solar cell, so that light absorption of the transparent electrode is inhibited, meanwhile, the non-groove part of the transparent electrode still has proper thickness, resistance cannot be increased, obvious resistive loss cannot be caused, and the sunlight utilization rate and the energy conversion efficiency of the cell can be effectively improved.
According to the embodiment of the invention, the groove is positioned on the surface of the transparent electrode far away from the transparent substrate.
According to the embodiment of the invention, the depth of the groove accounts for 40-100% of the thickness of the transparent electrode.
According to an embodiment of the present invention, the transparent electrode is a single layer structure or a multi-layer structure.
According to an embodiment of the present invention, a ratio of an area of the groove to an area of the transparent electrode is greater than 0 and less than 0.325.
According to an embodiment of the present invention, a material forming the transparent electrode is a transparent conductive oxide.
According to the embodiment of the invention, the groove is positioned on the surface of the transparent electrode close to the transparent substrate, and part of the buffer layer is matched and filled in the groove.
According to an embodiment of the present invention, a material forming the buffer layer includes Al2O3、SiOxNy、SiNxAnd MgF2Wherein x is 0.4 to 1.8 and y is 0.2 to 1.6.
In another aspect of the invention, the invention provides a method of making a thin film solar cell as described above. According to an embodiment of the present invention, the method includes sequentially forming a transparent electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer, and a metal electrode on a transparent substrate, wherein the transparent electrode has a plurality of grooves disposed at intervals. The inventor finds that the method is simple, convenient and quick to operate, the prepared thin-film solar cell can inhibit the light absorption of the transparent electrode, meanwhile, obvious resistive loss is avoided, the sunlight utilization rate can be further improved, and the energy conversion efficiency of the cell is improved.
In another aspect of the invention, the invention provides a method of making a thin film solar cell as described above. According to an embodiment of the present invention, the method includes sequentially forming a buffer layer, a transparent electrode, a perovskite light absorption layer, a charge transport layer, and a metal electrode on a transparent substrate, wherein the transparent electrode has a plurality of grooves disposed at intervals. The inventor finds that the method is simple, convenient and quick to operate, the prepared thin-film solar cell can inhibit the light absorption of the transparent electrode, meanwhile, obvious resistive loss is avoided, the sunlight utilization rate can be further improved, and the energy conversion efficiency of the cell is improved.
According to an embodiment of the present invention, the step of forming the transparent electrode includes: forming a transparent conductive layer on the transparent substrate; and forming a plurality of grooves arranged at intervals on the transparent conducting layer by using laser to obtain the transparent electrode.
Drawings
Fig. 1 is a schematic cross-sectional structure of a conventional thin-film solar cell.
Fig. 2 is a schematic cross-sectional structure diagram of a thin film solar cell according to an embodiment of the present invention.
Fig. 3 is a schematic plan view of a transparent electrode according to an embodiment of the present invention.
Fig. 4 is a schematic plan view of a transparent electrode according to an embodiment of the present invention.
Fig. 5 is a schematic cross-sectional structure diagram of a thin film solar cell according to an embodiment of the present invention.
Fig. 6 is a schematic cross-sectional structure diagram of a thin film solar cell according to an embodiment of the present invention.
Fig. 7 is a schematic flow chart of a method for preparing a transparent electrode according to an embodiment of the present invention.
Fig. 8 is a schematic plan view of a transparent electrode according to an embodiment of the present invention.
Fig. 9 is a graph of the spectral irradiance distribution of am1.5g and the absorption characteristics of the ITO transparent electrode as a function of wavelength and transparent electrode thickness for the examples of the invention.
FIG. 10 shows the results of measurements of photo-generated current loss due to the reflection and light absorption of ITO transparent electrodes of different thicknesses in the examples of the present invention.
FIG. 11 is a graph showing the variation of photo-generated current with respect to the aperture ratio of the transparent electrode for different groove depths in the embodiment of the present invention.
Fig. 12 is a graph showing the results of power gain due to an increase in photo-generated current and power loss due to an increase in resistance as a function of aperture ratio in the embodiment of the present invention.
Fig. 13 is a graph showing the results of the variation of the efficiency of the thin film solar cell with the aperture ratio in the example of the present invention.
Detailed Description
The following describes embodiments of the present invention in detail. The following examples are illustrative only and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
The present invention has been completed based on the following findings and recognition by the inventors:
the inventor finds that the thin-film solar cell has the advantages of high efficiency and low cost, but has smaller current and unsatisfactory cell performance. The main reason is that sunlight is not effectively utilized, and the photo-generated current is small, specifically, on one hand, the surface of each layer structure in the thin film solar cell is smooth, and high reflectivity is caused (the principle schematic diagram refers to fig. 1), so that sunlight is reflected and is not absorbed by the light absorption layer for generating the photo-generated current; another aspect is that the sunlight for generating the photo-generated current becomes less because the widely used transparent conductive oxide electrode (TCO) has light absorption and free carrier charge induced absorption due to its band gap (-3 eV). At present, various attempts have been reported to improve the above problems by mainly focusing on reduction of reflectance and reduction of high reflectance of thin film solar cells, but there has been no good solution to the problem of light absorption of transparent conductive oxide electrodes. In view of the above light absorption problem, the inventors have conducted intensive studies and found that the TCO serves as both an electrode and an optical window, and the transmittance and the resistance of the TCO are considered at the same time, and based on this, it is proposed that the formation of the groove on the transparent electrode layer can reduce the light absorption without increasing the resistance, thereby effectively improving the light utilization rate and the cell efficiency.
In view of the above, in one aspect of the present invention, a thin film solar cell is provided. According to an embodiment of the present invention, referring to fig. 2, the thin film solar cell includes a transparent electrode 20, an electron transport layer 30, a perovskite light absorption layer 40, a hole transport layer 50, and a metal electrode 60, which are sequentially stacked, wherein the transparent electrode 20 has a plurality of grooves 21 disposed at intervals. The thickness of the partial transparent electrode can be reduced by arranging the groove in the thin-film solar cell, so that light absorption of the transparent electrode is inhibited, meanwhile, the non-groove part of the transparent electrode still has proper thickness, resistance cannot be obviously increased, obvious resistive loss cannot be caused, and the sunlight utilization rate and the energy conversion efficiency of the cell can be effectively improved.
As will be understood by those skilled in the art, the above-mentioned structures in the thin-film solar cell need to be disposed on a substrate having a supporting function, and in addition, the above-mentioned structures, especially the perovskite light-absorbing layer, need to be protected, so, referring to fig. 2, the thin-film solar cell generally further includes a transparent substrate 10 disposed on the side of the transparent electrode away from the electron transport layer, an encapsulation layer 70 disposed on the side of the metal electrode 60 away from the hole transport layer, and a back plate 80 disposed on the side of the encapsulation layer away from the metal electrode. According to the embodiment of the present invention, the transparent substrate and the back plate may be a glass substrate or a plastic substrate, respectively, and the encapsulation structure may be a light-curing resin layer, and the like.
According to an embodiment of the present invention, referring to fig. 2, the groove 21 is located on the surface 22 of the transparent electrode 20 close to the electron transport layer 30. By the arrangement, the transparent electrode layer is easy to prepare, preparation steps and procedures are simplified, and cost is saved. In some implementations, the transparent conductive layer can be formed directly on the transparent substrate 10, and then the transparent conductive layer can be subjected to laser processing or etching to form the groove.
According to the embodiment of the present invention, referring to fig. 3 and 4, the planar shape of the groove 21 may be a long strip, and may also be a point (specifically, may be a circle, a triangle, a quadrangle, and other regular or irregular polygons, in the case of a rectangle shown in fig. 4). Therefore, the planar shape of the groove can be flexibly selected by a person skilled in the art according to actual needs, and the application range is wider.
According to the embodiment of the invention, in order to better reduce the light absorption of the transparent electrode without obviously increasing the resistance, the depth H1 of the groove accounts for 40% -100% of the thickness H2 of the transparent electrode, such as 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, and the like, wherein when the ratio of the depth of the groove to the thickness of the transparent electrode is 100%, the groove penetrates through the transparent electrode. Specifically, as the thickness of the transparent electrode increases, the reflectivity gradually decreases, the light absorption gradually increases, and the resistance gradually decreases, the above influence factors of the transparent electrode are comprehensively considered, and the depth of the groove in the above range enables the thin-film solar cell to have better service performance.
According to an embodiment of the present invention, in order to obtain better usability, the thickness H2 of the transparent electrode may be 50nm to 1000nm, such as 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1000nm, etc. Within the thickness range, the transparent electrode can have less light absorption, and simultaneously has proper resistance, so that the cell has extremely high light utilization rate and energy conversion efficiency.
According to an embodiment of the invention, a ratio of an area of the recess to an area of the transparent electrode is larger than 0 and smaller than 0.325, such as 0.1, 0.125, 0.15, 0.175, 0.2, 0.225, 0.25, 0.275, 0.3, 0.325, etc. Tests show that the larger the area ratio of the groove is, the more the light absorption of the transparent electrode is reduced, and the more the resistance of the transparent electrode is increased, so that the resistance can be better and effectively reduced without obviously increasing the resistance in the area ratio range.
According to the embodiment of the present invention, the transparent electrode may have a single-layer structure or a multi-layer structure. The materials of the adjacent two layers of structures can be the same or different, and the skilled person can flexibly select the structures according to actual needs.
According to an embodiment of the present invention, the material forming the transparent electrode may be a transparent conductive oxide, for example, including but not limited to Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (ZAO), and the like. Therefore, sunlight can be effectively irradiated on the light absorption layer, and the light absorption layer has good conductivity, is easy to realize doping and is easy to prepare.
According to the embodiment of the present invention, the material and thickness of the electron transport layer are not particularly limited, and may be those conventional in the art. In some embodiments, the material of the electron transport layer may be zinc oxide, tin oxide, titanium dioxide, etc., taking titanium dioxide as an example, the electron transport layer may specifically include a titanium dioxide dense layer and a titanium dioxide mesoporous layer, etc., and the thickness of the electron transport layer may be 40nm to 250nm, such as 40nm, 50nm, 80nm, 100nm, 120nm, 150nm, 160nm, 170nm, 190nm, 200nm, 220nm, 240nm, 250nm, etc. Therefore, separation of the photo-generated electron-hole pairs can be effectively promoted, charge separation and transmission efficiency is improved, and influence of charge accumulation on the service life of the battery is avoided.
The specific material and thickness of the perovskite light absorbing layer according to the embodiment of the present invention are also not particularly limited, and may be those conventional in the art. In some embodiments, the perovskite light absorption layer may be made of CH3NH3(MA)PbX3、CHNH2(FA)PbX3Or organically hybridized (FA, MA) PbX3And the like, wherein MA represents methylamine cation, FA represents formamidinium cation, and X is halogen such as I, Br, Cl, F and the like. Therefore, multiple processes of sunlight absorption, excitation, transportation, separation and the like of photon-generated carriers can be efficiently completed at the same time, the light absorption capacity is strong, the light absorption range is wide, the service life of the carriers is long, the open-circuit voltage is high under full light, the preparation is simple and convenient, the preparation condition is mild, the preparation can be carried out under the low-temperature condition, and the preparation method is suitable for preparing flexible batteries.
According to an embodiment of the present invention, the material and thickness of the hole transport layer are not particularly limited, and may be those conventional in the art. In some embodiments, the hole transport layer may be made of Spiro-OMeTAD, CuSCN, CuI, PEDOT, PSS, P3HT, or PTAA, and the like, and the thickness of the hole transport layer may be 10nm to 400nm, such as 10nm, 30nm, 50nm, 60nm, 80nm, 90nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, and the like. Therefore, separation of the photo-generated electron-hole pairs can be effectively promoted, hole transmission to a metal electrode is facilitated, and the service performance of the battery is improved.
According to the embodiment of the present invention, the metal electrode may also be a metal electrode in a conventional thin film solar cell, and specifically, the material of the metal electrode may be silver, copper, aluminum, molybdenum, or a composite layer composed of two or more of them. Therefore, the battery has good conductivity and good battery service performance.
In another aspect of the invention, the invention provides a thin film solar cell. According to an embodiment of the present invention, referring to fig. 5, the thin film solar cell includes a buffer layer 90, a transparent electrode 20, a perovskite light absorption layer 40, a charge transport layer 100 and a metal electrode 60, which are sequentially stacked, wherein the transparent electrode 20 has a plurality of grooves 21 disposed at intervals. The thickness of the partial transparent electrode can be reduced by arranging the groove in the thin-film solar cell, so that light absorption of the transparent electrode is inhibited, meanwhile, the non-groove part of the transparent electrode still has proper thickness, resistance cannot be increased, obvious resistive loss cannot be caused, and the sunlight utilization rate and the energy conversion efficiency of the cell can be effectively improved.
According to an embodiment of the present invention, referring to fig. 6, the groove 21 is located on a surface of the transparent electrode 20 close to the transparent substrate 10, and a portion of the buffer layer 90 is fittingly filled in the groove 21. That is, the thickness of the buffer layer 90 is different at the position corresponding to the groove and the position corresponding to the non-groove. Therefore, the convex-concave shape of the surface of the buffer layer can effectively reduce light reflection, and is beneficial to improving the utilization rate of light, thereby improving the efficiency of the battery.
According to an embodiment of the present invention, the material forming the buffer layer 90Including Al2O3、SiOxNy、SiNxAnd MgF2Wherein x is 0.4 to 1.8 and y is 0.2 to 1.6. Therefore, the gradient of the refractive index is gradually decreased, reflection is reduced, and the light utilization rate and the cell efficiency are improved.
According to the embodiment of the invention, the charge transport layer involved in the thin film solar cell is consistent with the hole transport layer described above, and redundant description is omitted; the transparent substrate, the transparent electrode, the perovskite light absorption layer, the metal electrode, the packaging layer and the back plate related in the thin film solar cell can be consistent with those described in the foregoing, and are not repeated herein.
In another aspect of the invention, the invention provides a method of making a thin film solar cell as described above. According to an embodiment of the present invention, the method includes sequentially forming a transparent electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer, and a metal electrode on a transparent substrate, wherein the transparent electrode has a plurality of grooves disposed at intervals. The inventor finds that the method is simple, convenient and quick to operate, the prepared thin-film solar cell can inhibit the light absorption of the transparent electrode, meanwhile, obvious resistive loss is avoided, the sunlight utilization rate can be further improved, and the energy conversion efficiency of the cell is improved.
According to the embodiment of the invention, in order to reduce the light absorption of the transparent electrode to obtain higher photo-generated current, the groove is formed by adopting a laser-induced patterning process so as to optimize the balance between current gain and power loss, and no additional operation equipment or operation steps are required compared with the traditional preparation process. As will be appreciated by those skilled in the art, the solar cell typically forms an entire transparent electrode layer on a large sheet of substrate, and then laser-cuts the transparent electrode layer on the large sheet of substrate to form transparent electrodes in individual solar cells, and the laser-induced patterning process of the present invention may be performed using the same process as the laser-cutting. According to an embodiment of the present invention, referring to fig. 7 and 8, the forming of the transparent electrode may include: forming a whole transparent conductive layer 24 on the large transparent substrate 10; the whole transparent conductive layer 24 is cut into a plurality of sub transparent conductive layers by laser, each sub transparent conductive layer is used for forming a transparent electrode in one solar cell, in this step, a plurality of grooves 21 arranged at intervals can be formed on the sub transparent conductive layers by laser at the same time, and the transparent electrode 20 is obtained. Therefore, the preparation method does not need to add additional operating equipment and operating steps, and can be completely compatible with the traditional preparation process.
In another aspect of the invention, the invention provides a method of making a thin film solar cell as described above. According to an embodiment of the present invention, the method includes sequentially forming a transparent electrode, a perovskite light absorption layer, a charge transport layer, and a metal electrode on a transparent substrate, wherein the transparent electrode has a plurality of grooves disposed at intervals. The inventor finds that the method is simple, convenient and quick to operate, the prepared thin-film solar cell can inhibit the light absorption of the transparent electrode, meanwhile, obvious resistive loss is avoided, the sunlight utilization rate can be further improved, and the energy conversion efficiency of the cell is improved.
According to some embodiments of the present invention, the forming of the transparent electrode layer may include: forming a transparent conductive layer on the buffer layer; and forming a plurality of grooves arranged at intervals on the transparent conducting layer by using laser to obtain the transparent electrode. The specific steps and operations may be the same as those described above and are not described in detail herein.
According to other embodiments of the present invention, the grooves on the transparent electrode layer may be formed by a shape of the buffer layer, specifically, the buffer layer with a flat surface may be formed on the transparent substrate, then the surface of the buffer layer with a flat surface, which is far away from the transparent substrate, is subjected to laser processing to form protrusions, then the transparent electrode is formed on the surface of the buffer layer with the protrusions, and then the corresponding grooves are formed on the transparent electrode at positions corresponding to the protrusions.
The following embodiments of the present invention are described in detail, and the specific test methods in the following embodiments are performed by performing simulation calculation according to the basic logic method that is conventional in the art.
Example 1:
test samples: indium Tin Oxide (ITO) transparent electrodes having a Thickness (Thickness) of 50nm and 500nm were formed on the surface of a glass transparent substrate, respectively, to obtain test samples.
The test method comprises the following steps: the above test samples were tested for light absorption properties under am1.5g conditions, and the test results and am1.5g spectral irradiance distributions are shown in fig. 9.
Fig. 9 shows a graph of the spectral irradiance distribution of am1.5g and the absorption characteristics of the ITO transparent electrode as a function of wavelength and transparent electrode thickness. As can be seen from fig. 9, at a wavelength less than 450nm, the light absorption rate increases significantly as the thickness of the transparent electrode increases, and decreases sharply as the wavelength increases, and when the wavelength is further increased, the light absorption rate increases slightly as the wavelength increases; and when the wavelength is 300nm, the transparent electrode with the thickness of 50nm has the absorptivity of 30%, and the transparent electrode with the thickness of 500nm has the absorptivity of 100%; while a transparent electrode with a thickness of 500nm still has an absorption of more than 40% at a wavelength of 400 nm.
Example 2
Test samples: the test samples were a plurality of solar cells including a glass transparent substrate, an ITO transparent electrode, an electron transport layer (titanium dioxide), a perovskite light absorption layer, a hole transport layer (Spiro-OMeTAD), and a silver electrode, which were sequentially stacked, and the ITO transparent electrodes in the plurality of solar cells were different in thickness, namely, 0nm (i.e., not including an ITO transparent electrode), 100nm, 200nm, 300nm, 400nm, and 500nm, respectively.
The test method comprises the following steps: aiming at the plurality of solar cells, the photo-generated current loss caused by the reflection action of the transparent electrode layers with different thicknesses and the photo-generated current loss caused by the light absorption of the transparent electrode are measured and calculated respectively according to the conventional basic logic method in the field, and the test result is shown in figure 10.
Fig. 10 shows the test results of photo-generated current loss due to the reflection and light absorption of ITO transparent electrodes of different thicknesses. As can be seen from FIG. 10, as the thickness of the ITO transparent electrode increases, the loss of the photo-generated current due to the reflection action gradually decreases, and the photo-generated current due to the light absorption action gradually decreasesThe losses gradually increase and the total photo-generated current losses gradually increase. Therefore, when the ITO transparent electrode is not arranged, the photo-generated current loss is minimum to be 20.9mA/cm2The photo-generated current loss of the ITO transparent electrode with the thickness of 500nm is less than 1.56mA/cm2. However, the ITO transparent electrode is used as an electrode as well as an optical window, which is an essential component for constituting a solar cell, and therefore, in order to further improve the light generation current and the cell efficiency, it is necessary to develop a technology capable of reducing the current loss absorbed by the transparent electrode layer and minimizing the resistance loss occurring at this time.
Example 3
Test samples: an ITO transparent electrode (with a thickness of 500nm), an electron transport layer (titanium dioxide, with a thickness of 40nm) and a perovskite light absorption layer (MAPbI) are sequentially formed on a glass transparent substrate3500nm in thickness), a hole transport layer (Spiro-OMeTAD, 150nm in thickness), a metal electrode (silver, 100nm in thickness), an encapsulation layer (ethylene-vinyl acetate copolymer, EVA) and a back sheet (glass) to obtain a test sample, wherein the ITO transparent electrode is formed by the steps of: forming a transparent conductive layer on a transparent substrate; and forming a plurality of grooves arranged at intervals on the transparent conducting layer by using laser to obtain the transparent electrode. A series of solar cells having different aperture ratios (groove area/total area of transparent electrodes) and different thicknesses of the transparent electrodes at the bottom of the grooves were prepared using the above method.
The test method comprises the following steps: for the above series of solar cells, the photo-generated current Jph of the solar cell was calculated according to the simulation of the basic logic method conventional in the art, and the test result is shown in fig. 11, wherein 0%, 20%, 40%, 60%, 80% represents the thickness of the transparent electrode at the bottom of the groove as a percentage of the total thickness of the transparent electrode, i.e., (the total thickness of the transparent electrode H2-the depth of the groove H1)/the total thickness of the transparent electrode H2.
As can be seen from fig. 11, the photo-generated current Jph increases with the increase of the aperture ratio, and the photo-generated current and the increase rate thereof reach the maximum value when the groove penetrates through the transparent electrode, however, even though the photo-generated current is the maximum when there is no transparent electrode, the transparent electrode is an essential component of the thin film solar cell as an electrode in the thin film solar cell, and the transparent electrode still needs to be provided in the thin film solar cell, so the thickness of the transparent electrode needs to be reasonably selected.
Example 4
Test samples: an ITO transparent electrode (with a thickness of 500nm), an electron transport layer (titanium dioxide, with a thickness of 40nm) and a perovskite light absorption layer (MAPbI) are sequentially formed on a glass transparent substrate3500nm in thickness), a hole transport layer (Spiro-OMeTAD, 150nm in thickness), a metal electrode (silver, 100nm in thickness), an encapsulant (ethylene-vinyl acetate copolymer, EVA) and a back sheet (glass) to obtain a test sample, wherein the ITO transparent electrode is formed by the steps of: forming a transparent conductive layer on a transparent substrate; and forming a plurality of grooves which are arranged at intervals and penetrate through the transparent electrode layer on the transparent conductive layer by utilizing laser to obtain the transparent electrode. A series of solar cells with different aperture ratios are prepared by the above method, and a plan view of a transparent substrate and a transparent electrode in the solar cell can be referred to fig. 3.
The test method comprises the following steps: for the series of solar cells, power gain caused by increase of photogenerated current of the solar cells and power loss caused by resistance muscle increase are measured and calculated according to a simulation of a basic logic method conventional in the field, and the test results are shown in fig. 12 and fig. 13.
As can be seen from fig. 12 and 13, the power gain due to the increase of the photo-generated current increases with the increase of the aperture ratio, and the power loss due to the increase of the resistance of the transparent electrode also increases with the increase of the aperture ratio, and when 0< aperture ratio <0.325, the overall power of the cell increases, wherein the power loss Ploss due to the increase of the resistance of the transparent electrode is calculated by the following formula:
dPloss＝I2dR
wherein: rhosTransparent electrode resistance (omega/sq)
L transparent electrode length (cm)
J Current Density (A/cm)2)
S groove width (cm)
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. A thin film solar cell is characterized by comprising a transparent electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode which are sequentially stacked, wherein the transparent electrode is provided with a plurality of grooves arranged at intervals;
at least one of the following conditions is satisfied:
the depth of the groove accounts for 40% -100% of the thickness of the transparent electrode;
the ratio of the area of the groove to the area of the transparent electrode is greater than 0 and less than 0.325.
2. The thin film solar cell is characterized by comprising a buffer layer, a transparent electrode, a perovskite light absorption layer, a charge transmission layer and a metal electrode which are sequentially stacked, wherein the transparent electrode is provided with a plurality of grooves arranged at intervals;
at least one of the following conditions is satisfied:
the depth of the groove accounts for 40% -100% of the thickness of the transparent electrode;
the ratio of the area of the groove to the area of the transparent electrode is greater than 0 and less than 0.325.
3. The thin-film solar cell according to claim 1 or 2, wherein the groove is located on a surface of the transparent electrode away from the transparent substrate.
4. The thin film solar cell according to claim 1 or 2, wherein the transparent electrode satisfies at least one of the following conditions:
is a single-layer structure or a multi-layer structure;
the material forming the transparent electrode is transparent conductive oxide.
5. The thin-film solar cell of claim 2, wherein the groove is located on a surface of the transparent electrode close to the transparent substrate, and a portion of the buffer layer is fittingly filled in the groove.
6. The thin film solar cell of claim 2 or 5, wherein a material forming the buffer layer comprises Al2O3、SiOxNy、SiNxAnd MgF2Wherein x =0.4 to 1.8 and y =0.2 to 1.6.
7. A method for preparing the thin film solar cell of any one of claims 1, 3 and 4, comprising sequentially forming a transparent electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode on a transparent substrate, wherein the transparent electrode has a plurality of grooves arranged at intervals.
8. A method for preparing the thin film solar cell as claimed in any one of claims 2 to 6, comprising sequentially forming a buffer layer, a transparent electrode, a perovskite light absorption layer, a charge transport layer and a metal electrode on a transparent substrate, wherein the transparent electrode has a plurality of grooves arranged at intervals.
9. The method according to claim 7 or 8, wherein the step of forming the transparent electrode comprises:
forming a transparent conductive layer on the transparent substrate;
and forming a plurality of grooves arranged at intervals on the transparent conducting layer by using laser to obtain the transparent electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811642362.5A CN109713132B (en) | 2018-12-29 | 2018-12-29 | Thin film solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811642362.5A CN109713132B (en) | 2018-12-29 | 2018-12-29 | Thin film solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109713132A CN109713132A (en) | 2019-05-03 |
| CN109713132B true CN109713132B (en) | 2022-04-29 |
Family
ID=66260383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811642362.5A Active CN109713132B (en) | 2018-12-29 | 2018-12-29 | Thin film solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109713132B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265682B (en) * | 2019-06-06 | 2021-01-15 | 深圳市致远动力科技有限公司 | Preparation method of battery test intermediate |
| CN116033762A (en) * | 2021-10-25 | 2023-04-28 | 隆基绿能科技股份有限公司 | Perovskite battery with comb-shaped fiber structure hole transport layer and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69228079T2 (en) * | 1991-02-21 | 1999-09-16 | Angew Solarenergie Ase Gmbh | Photovoltaic device and solar module with partial transparency, and manufacturing method |
| JP4441048B2 (en) * | 2000-03-23 | 2010-03-31 | 株式会社カネカ | Manufacturing method of integrated thin film solar cell |
| CN107681055A (en) * | 2017-10-31 | 2018-02-09 | 成都赛伦斯环保科技有限公司 | A kind of ABO3The perovskite-based thin-film solar cells of type |
-
2018
- 2018-12-29 CN CN201811642362.5A patent/CN109713132B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109713132A (en) | 2019-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10644171B2 (en) | Solar cell | |
| US20180019360A1 (en) | Photoelectric conversion device and photoelectric conversion module | |
| US20150287849A1 (en) | Solar cell and method for manufacturing the same | |
| TWI585988B (en) | Solar cell | |
| US20090165840A1 (en) | Solar cell module and method of manufacturing the same | |
| US20200028005A1 (en) | Bifacial Solar Modules Incorporating Effectively Transparent Contacts | |
| CN110970562A (en) | Perovskite/crystalline silicon laminated solar cell and preparation method thereof | |
| CN111916523A (en) | Heterojunction solar cell, assembly thereof and preparation method | |
| Moulin et al. | Study of thin-film silicon solar cell back reflectors and potential of detached reflectors | |
| CN109713132B (en) | Thin film solar cell and preparation method thereof | |
| CN110649111A (en) | Laminated solar cell | |
| US20140083501A1 (en) | Transparent conducting film having double structure and method of manufacturing the same | |
| US20120006391A1 (en) | Photovoltaic module and method of manufacturing a photovoltaic module having an electrode diffusion layer | |
| Spence et al. | A comparison of different textured and non-textured anti-reflective coatings for planar monolithic silicon-perovskite tandem solar cells | |
| US10411148B2 (en) | Photoelectric conversion element | |
| CN102034888A (en) | Thin film solar cell and preparation method thereof | |
| CN109728173B (en) | Thin film solar cell and preparation method thereof | |
| JP4775906B2 (en) | Photovoltaic device and manufacturing method thereof | |
| EP2273559A1 (en) | Solar cell | |
| US20140083486A1 (en) | Solar cell and method for manufacturing same | |
| TWI575765B (en) | The anti - reflection spectrum of the multi - faceted solar cell increases the structure | |
| EP2738819B1 (en) | Solar cell | |
| CN103165686B (en) | A kind of five-junction solar cell with antireflective coating | |
| TW201310667A (en) | Solar cell | |
| US20120055535A1 (en) | Photovoltaic Devices With Textured Glass Superstrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: No.8899 Xincheng Avenue, Jintan District, Changzhou City, Jiangsu Province Applicant after: SVOLT Energy Technology Co.,Ltd. Address before: 213200 No. 168 Huacheng Middle Road, Jintan District, Suzhou City, Jiangsu Province Applicant before: SVOLT Energy Technology Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210126 Address after: 1098 Dacheng Road, Xishan District, Wuxi City, Jiangsu Province Applicant after: Wuxi Jidian light energy technology Co.,Ltd. Address before: No.8899 Xincheng Avenue, Jintan District, Changzhou City, Jiangsu Province Applicant before: SVOLT Energy Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |