CN109713050B - graphene-ZnO composite material, preparation method thereof and ultraviolet detector - Google Patents
graphene-ZnO composite material, preparation method thereof and ultraviolet detector Download PDFInfo
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Abstract
The invention discloses a graphene-ZnO composite material, a preparation method thereof and an ultraviolet detector, wherein the preparation method of the graphene-ZnO composite material comprises the following steps: (1) obtaining a vertical graphene sheet on a substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method, wherein the substrate adopts foamed nickel; (2) and transversely growing ZnO nanowires among the vertical graphene sheets by adopting an electrochemical deposition method. The graphene-ZnO composite material obtained by the invention has a higher specific surface area, when the graphene-ZnO composite material is applied to an ultraviolet detector, the surface area (namely the actual photosensitive area) of a photosensitive layer in an ultraviolet detector device and the utilization efficiency of photo-generated electrons are effectively improved, and the ultraviolet detector based on the graphene-ZnO composite material has higher electrical property and stability and is increased in heat conduction capability.
Description
Technical Field
The invention relates to the technical field of ultraviolet detectors, in particular to a graphene-ZnO composite material, a preparation method thereof and an ultraviolet detector.
Background
Ultraviolet detectors based on wide band gap semiconductor nanomaterials are a hot problem in the field of recent photodetector research due to the advantages of lower power consumption, higher quantum efficiency, lighter weight and convenience in integrated preparation. At present, ZnO is adopted as an important wide-band gap semiconductor material, and has the characteristics of high chemical stability and thermal stability, large exciton confinement energy (60meV), high melting point and high sensitivity to ultraviolet light, so that the development of an ultraviolet detector with a ZnO nanostructure as a photosensitive layer has huge application prospect.
The working principle of the ultraviolet detector device based on the ZnO nano material is as follows: when ultraviolet light irradiates, light is absorbed by ZnO, electron hole pairs are generated in the ZnO, photogenerated carriers are separated into electrons and holes under the action of external bias voltage and flow to two end electrodes to form current, and the detection effect of the ultraviolet light is achieved.
However, the detector of the ZnO nano material has the defects of high electron-hole recombination rate, low specific surface area limitation, no resistance to photo-corrosion and the like.
Disclosure of Invention
In view of the above, the graphene-ZnO composite material, the preparation method thereof and the non-solid electrolyte tantalum capacitor provided by the invention better overcome the problems and defects objectively existing in the prior art, the vertical graphene sheet is obtained on the substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method, has low reflectivity and high absorptivity, then ZnO nanowires are transversely grown between the vertical graphene sheets by adopting an electrochemical deposition method, the obtained ZnO nano-wire has higher specific surface area, when being applied to an ultraviolet detector, the surface area (namely the actual photosensitive area) of a photosensitive layer in an ultraviolet detector device and the utilization efficiency of photo-generated electrons are effectively improved, therefore, the sensing absorption of ultraviolet light is improved, the photon capture is increased, the quantum efficiency is improved, and the efficiency and the sensitivity of the ultraviolet detector are improved; in addition, compared with ITO, the graphene material has greatly increased electric conductivity and heat conductivity coefficient, so that the ultraviolet detector based on the graphene-ZnO composite material has higher electrical property and stability, and the heat conductivity is increased.
A preparation method of a graphene-ZnO composite material comprises the following steps:
(1) obtaining a vertical graphene sheet on a substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method, wherein the substrate adopts foamed nickel;
(2) and transversely growing ZnO nanowires among the vertical graphene sheets by adopting an electrochemical deposition method.
Further, in the step (1), the process of vertically growing the graphene sheet on the substrate by using the radio frequency plasma enhanced chemical vapor deposition method includes: placing the substrate on a sample table with resistance heating capacity in a reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment, introducing argon, keeping the gas pressure in the reaction chamber at 1Torr, and heating the substrate to 600-1100 ℃ at the heating rate of 20-25 ℃/min; and then introducing methane and hydrogen into the reaction chamber, setting the frequency radio power to be 800-1000W when the gas pressure in the reaction chamber is 10Torr, and depositing for 10-80 min to obtain a vertical graphene sheet on the substrate.
Further, before the step (1), the method further comprises the following steps: cleaning a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment by adopting oxygen plasma; in the cleaning process: the temperature of the sample stage is 700-800 ℃, and the power of the oxygen plasma is 800-1000W; the cleaning time is 80-100 min.
Further, before the step (1), the method further comprises the following steps: the substrate is ultrasonically cleaned by immersing in an isopropanol or acetone solution, then rinsed with deionized water, and then dried with nitrogen.
Further, in the step (1), the flow rate of the methane is 1-30 sccm; the flow rate of the hydrogen gas was 20 sccm.
Further, in the step (1), after the deposition is finished, the reaction chamber is cooled to room temperature under an argon atmosphere, and then the reaction chamber is emptied to take out the substrate on which the vertical graphene sheet grows.
Further, in the step (2), the process of laterally growing the ZnO nanowires between the vertical graphene sheets by using an electrochemical deposition method includes: preparing a precursor solution consisting of a zinc source and a surfactant, and transferring the precursor solution into a three-electrode system, wherein a vertical graphene sheet obtained on a substrate is taken as a working electrode, a foil is taken as an auxiliary electrode, Ag/AgCl is taken as a reference electrode, ZnO nanowires are transversely grown between the vertical graphene sheets by setting the deposition temperature to be 80-100 ℃, the deposition time to be 1-1.5 h and the deposition potential to be-1.0-0.8V; finally, washing and drying the obtained product by using deionized water.
Further, in the step (2), the zinc source is zinc nitrate solution or zinc acetate, and the surfactant is hexamethylenetetramine; the ratio of the amount of the zinc source to the amount of the surfactant is 1: 1.
the invention also provides a graphene-ZnO composite material which is prepared by the preparation method of the graphene-ZnO composite material.
The invention also provides an ultraviolet detector which comprises a photosensitive layer, wherein the photosensitive layer is made of the graphene-ZnO composite material.
Compared with the prior art, the graphene-ZnO composite material, the preparation method thereof and the non-solid electrolyte tantalum capacitor have the beneficial effects that:
according to the invention, the vertical graphene sheets are obtained on the substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method, the graphene sheets have low reflectivity and high absorptivity, and then ZnO nanowires are transversely grown among the vertical graphene sheets by adopting an electrochemical deposition method, so that the obtained graphene-ZnO composite material has a higher specific surface area, and when the graphene-ZnO composite material is applied to an ultraviolet detector, the surface area (namely the actual photosensitive area) of a photosensitive layer in an ultraviolet detector device and the utilization efficiency of photo-generated electrons are effectively improved, thereby improving the sensing absorption of ultraviolet light, increasing photon capture, improving quantum efficiency and improving the efficiency and sensitivity of the ultraviolet detector device; in addition, compared with ITO, the graphene material has greatly increased electric conductivity and heat conductivity coefficient, so that the ultraviolet detector based on the graphene-ZnO composite material has higher electrical property and stability, and the heat conductivity is increased.
In summary, the present invention has many advantages and practical values, and similar methods are not published or used in similar products, so that the present invention is innovative, has good and practical effects, and has various enhanced effects compared with the prior art, thereby being more practical and having wide industrial value.
In order to make the aforementioned and other objects, features and advantages of the invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention.
This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed as broadly as the present invention is capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In case of conflict, the present specification, including definitions, will control.
The terms as used herein:
the terms "comprises," "comprising," "includes," "including," "has," "having," "contains," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.
The conjunction "consisting of … …" excludes any unspecified elements, steps or components. If used in a claim, the phrase is intended to claim as closed, meaning that it does not contain materials other than those described, except for the conventional impurities associated therewith. When the phrase "consisting of … …" appears in a clause of the subject matter of the claims rather than immediately after the subject matter, it defines only the elements described in the clause; other elements are not excluded from the claims as a whole.
When an amount, concentration, or other value or parameter is expressed as a range, preferred range, or as a range of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when the range "1 ~ 5" is disclosed, the ranges described should be construed to include the ranges "1 ~ 4", "1 ~ 3", "1 ~ 2 and 4 ~ 5", "1 ~ 3 and 5", and the like. When a range of values is described herein, unless otherwise stated, the range is intended to include the endpoints thereof and all integers and fractions within the range.
"and/or" is used to indicate that one or both of the illustrated conditions may occur, e.g., a and/or B includes (a and B) and (a or B).
The invention provides a preparation method of a graphene-ZnO composite material, which comprises the following steps:
(1) and obtaining a vertical graphene sheet on a substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method, wherein the substrate adopts foamed nickel.
Preferably, the specific process of vertically growing the graphene sheet on the substrate by using the radio frequency plasma enhanced chemical vapor deposition method comprises the following steps: placing the foamed nickel substrate on a sample table with resistance heating capacity in a reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment, introducing argon, keeping the gas pressure in the reaction chamber at 1Torr, and heating the substrate to 600-1100 ℃ at a heating rate of 20-25 ℃/min under the current of 60A, such as 600 ℃, 700 ℃, 800 ℃, 900 ℃, 1000 ℃ or 1100 ℃; and then introducing methane and hydrogen into the reaction chamber, setting the frequency radio power to be 800-1000W when the gas pressure in the reaction chamber is 10Torr, depositing for 10-80 min, and then depositing and growing on the substrate to obtain the vertical graphene sheet.
The rate of temperature rise may be specifically 20 ℃/min, 21 ℃/min, 22 ℃/min, 23 ℃/min, 24 ℃/min or 25 ℃/min; specific examples of the radio frequency power include 1000W, and the like; the deposition time may be 10min, 20min, 30min, 40min, 50min, 60min, 70min or 80 min.
Preferably, before placing the foamed nickel substrate on a sample stage in a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition device, the method further comprises the following steps: cleaning a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment by adopting oxygen plasma; in the cleaning process: the temperature of the sample stage is 700-800 ℃, such as 700 ℃, 750 ℃ or 800 ℃, and the power of the oxygen plasma is 800-1000W, such as 800W, 900W or 1000W; the cleaning time is 80-100 min, such as 80min, 90min or 100 min.
Preferably, before placing the foamed nickel substrate on a sample stage in a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition device, the method further comprises the following steps: the substrate is ultrasonically cleaned by immersing in an isopropanol or acetone solution, then rinsed with deionized water, and then dried with nitrogen.
Preferably, the flow rate of the argon gas introduced is 20 sccm.
Preferably, the flow rate of the introduced methane is 1-30 sccm, such as 1sccm, 5sccm, 10sccm, 15sccm, 20sccm, 25sccm, or 30 sccm; the flow rate of the introduced hydrogen gas was 20 sccm.
Further, after the deposition is finished, the reaction chamber is cooled to room temperature under the argon atmosphere, the obtained graphene sheets are prevented from being oxidized, and then the reaction chamber is emptied and the substrate with the vertical graphene sheets is taken out.
(2) And transversely growing ZnO nanowires among the vertical graphene sheets by adopting an electrochemical deposition method.
Preferably, the process of laterally growing the ZnO nanowires between the vertical graphene sheets by using the electrochemical deposition method includes: preparing a precursor solution consisting of a zinc source and a surfactant, and transferring the precursor solution into a three-electrode system, wherein a vertical graphene sheet obtained on a substrate is taken as a working electrode, a foil is taken as an auxiliary electrode, Ag/AgCl is taken as a reference electrode, ZnO nanowires transversely grow among the vertical graphene sheets by setting the deposition temperature to be 80-100 ℃, the deposition time to be 1-1.5 h and the deposition potential to be-1.0-0.8V; and finally, washing the obtained product with deionized water to remove ions adsorbed on the surface of the product, and then drying to obtain the graphene-ZnO composite material.
The deposition temperature may be specifically 80 ℃, 80 ℃ or 80 ℃; the deposition time may be specifically 1 hour, 1.2 hours, 1.5 hours, or the like; specific examples of the deposition potential include-0.8V, -0.9V, and-01.0V.
Preferably, the zinc source adopts zinc nitrate solution or zinc acetate, and the surfactant adopts hexamethylenetetramine; in the prepared precursor solution, the ratio of the zinc source to the amount of the surfactant is 1: 1.
the invention also provides a graphene-ZnO composite material which is prepared by the preparation method of the graphene-ZnO composite material.
The invention also provides an ultraviolet detector which comprises a photosensitive layer, wherein the photosensitive layer is made of the graphene-ZnO composite material.
According to the invention, the vertical graphene sheets are obtained on the substrate by adopting a radio frequency plasma enhanced chemical vapor deposition method, the graphene sheets have low reflectivity and high absorptivity, and then ZnO nanowires are transversely grown among the vertical graphene sheets by adopting an electrochemical deposition method, so that the obtained graphene-ZnO composite material has a higher specific surface area, and when the graphene-ZnO composite material is applied to an ultraviolet detector, the surface area (namely the actual photosensitive area) of a photosensitive layer in an ultraviolet detector device and the utilization efficiency of photo-generated electrons are effectively improved, thereby improving the sensing absorption of ultraviolet light, increasing photon capture, improving quantum efficiency and improving the efficiency and sensitivity of the ultraviolet detector device; in addition, compared with ITO, the graphene material has greatly increased electric conductivity and heat conductivity coefficient, so that the ultraviolet detector based on the graphene-ZnO composite material has higher electrical property and stability, and the heat conductivity is increased.
In order to facilitate understanding of the present invention, the following embodiments are provided to further illustrate the technical solutions of the present invention. The applicant states that the present invention is illustrated in detail by the following examples, but the present invention is not limited to the following detailed process equipment and process flow, which means that the present invention should not be implemented by relying on the detailed process equipment and process flow. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Example 1
(1) Cleaning a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment by adopting oxygen plasma; in the cleaning process: enabling the temperature of the sample stage to reach 700 ℃, and setting the oxygen plasma power to be 800-1000W; the washing time was 80 min.
(2) The foamed nickel substrate to be used is firstly soaked in isopropanol solution for ultrasonic cleaning, then is washed by deionized water, and then is dried by nitrogen.
(3) Putting the foamed nickel substrate treated in the step (2) on a sample table with resistance heating capacity in a reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment, introducing argon gas firstly to enable the flow rate to be 20sccm, keeping the gas pressure in the reaction chamber to be 1Torr, and heating the substrate to 600 ℃ at the heating rate of 20 ℃/min under the current of 60A; then introducing methane and hydrogen into the reaction chamber, wherein the flow rate of the methane is 1sccm, the flow rate of the hydrogen is 20sccm, when the gas pressure in the reaction chamber is 10Torr, setting the frequency radio power to be 800W, and after 10min, depositing and growing on the substrate to obtain a vertical graphene sheet; and after the deposition is finished, cooling the reaction chamber to room temperature under the argon atmosphere to prevent the obtained graphene sheets from being oxidized, and emptying the reaction chamber to take out the substrate on which the vertical graphene sheets grow.
(4) Preparing a precursor solution consisting of zinc nitrate and hexamethylenetetramine, wherein the mass ratio of the zinc nitrate to the hexamethylenetetramine is 1: 1.
(5) and (2) transferring the precursor solution prepared in the step (1) into a three-electrode system, wherein a vertical graphene sheet obtained on a substrate is taken as a working electrode, a foil is taken as an auxiliary electrode, Ag/AgCl is taken as a reference electrode, and ZnO nanowires are grown in a transverse deposition mode among the vertical graphene sheets by setting the deposition temperature to be 80 ℃, the deposition time to be 1h and the deposition potential to be-0.8V.
(6) And finally, washing the obtained product with deionized water to remove ions adsorbed on the surface of the product, and then drying to obtain the graphene-ZnO composite material.
Example 2
(1) Cleaning a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment by adopting oxygen plasma; in the cleaning process: the temperature of the sample stage is up to 750 ℃, and the power of the oxygen plasma is set to 900W; the washing time was 90 min.
(2) The foamed nickel substrate to be used is firstly soaked in acetone solution for ultrasonic cleaning, then is washed by deionized water, and then is dried by nitrogen.
(3) Putting the foamed nickel substrate treated in the step (2) on a sample table with resistance heating capacity in a reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment, introducing argon gas firstly to enable the flow rate to be 20sccm, keeping the gas pressure in the reaction chamber to be 1Torr, and heating the substrate to 800 ℃ at the heating rate of 23 ℃/min under the current of 60A; then introducing methane and hydrogen into the reaction chamber, wherein the flow rate of the methane is 10sccm, the flow rate of the hydrogen is 20sccm, when the gas pressure in the reaction chamber is 10Torr, setting the frequency radio power to be 900W, and after 40min, depositing and growing on the substrate to obtain a vertical graphene sheet; and after the deposition is finished, cooling the reaction chamber to room temperature under the argon atmosphere to prevent the obtained graphene sheets from being oxidized, and emptying the reaction chamber to take out the substrate on which the vertical graphene sheets grow.
(4) Preparing a precursor solution consisting of zinc acetate and hexamethylenetetramine, wherein the mass ratio of zinc nitrate to hexamethylenetetramine is 1: 1.
(5) and (2) transferring the precursor solution prepared in the step (1) into a three-electrode system, wherein a vertical graphene sheet obtained on a substrate is taken as a working electrode, a foil is taken as an auxiliary electrode, Ag/AgCl is taken as a reference electrode, and ZnO nanowires are grown in a transverse deposition mode among the vertical graphene sheets by setting the deposition temperature to be 90 ℃, the deposition time to be 1h and the deposition potential to be-0.9V.
(6) And finally, washing the obtained product with deionized water to remove ions adsorbed on the surface of the product, and then drying to obtain the graphene-ZnO composite material.
Example 3
(1) Cleaning a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment by adopting oxygen plasma; in the cleaning process: the temperature of the sample stage is up to 800 ℃, and the power of the oxygen plasma is set to 1000W; the cleaning time is 100 min.
(2) The foamed nickel substrate to be used is firstly soaked in isopropanol solution for ultrasonic cleaning, then is washed by deionized water, and then is dried by nitrogen.
(3) Putting the foamed nickel substrate treated in the step (2) on a sample table with resistance heating capacity in a reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment, introducing argon gas firstly to enable the flow rate to be 20sccm, keeping the gas pressure in the reaction chamber to be 1Torr, and heating the substrate to 1000 ℃ at the heating rate of 25 ℃/min under the current of 60A; then introducing methane and hydrogen into the reaction chamber, wherein the flow rate of the methane is 20sccm, the flow rate of the hydrogen is 20sccm, when the gas pressure in the reaction chamber is 10Torr, setting the frequency radio power to be 1000W, and after 60min, depositing and growing on the substrate to obtain a vertical graphene sheet; and after the deposition is finished, cooling the reaction chamber to room temperature under the argon atmosphere to prevent the obtained graphene sheets from being oxidized, and emptying the reaction chamber to take out the substrate on which the vertical graphene sheets grow.
(4) Preparing a precursor solution consisting of zinc acetate and hexamethylenetetramine, wherein the mass ratio of zinc nitrate to hexamethylenetetramine is 1: 1.
(5) and (2) transferring the precursor solution prepared in the step (1) into a three-electrode system, wherein a vertical graphene sheet obtained on a substrate is taken as a working electrode, a foil is taken as an auxiliary electrode, Ag/AgCl is taken as a reference electrode, and ZnO nanowires are grown in a transverse deposition mode among the vertical graphene sheets by setting the deposition temperature to be 100 ℃, the deposition time to be 1h and the deposition potential to be-1.0V.
(6) And finally, washing the obtained product with deionized water to remove ions adsorbed on the surface of the product, and then drying to obtain the graphene-ZnO composite material.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention.
Claims (8)
1. A preparation method of a graphene-ZnO composite material for an ultraviolet detector is characterized by comprising the following steps: the method comprises the following steps:
(1) placing the substrate on a sample table with resistance heating capacity in a reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment, introducing argon, keeping the gas pressure in the reaction chamber at 1Torr, and heating the substrate to 600-1100 ℃ at the heating rate of 20-25 ℃/min; then introducing methane and hydrogen into a reaction chamber, setting the frequency radio power to be 800-1000W when the gas pressure in the reaction chamber is 10Torr, depositing for 10-80 min, and obtaining a vertical graphene sheet on a substrate, wherein the substrate adopts foamed nickel;
(2) preparing a precursor solution consisting of a zinc source and a surfactant, and transferring the precursor solution into a three-electrode system, wherein a vertical graphene sheet obtained on a substrate is taken as a working electrode, a foil is taken as an auxiliary electrode, Ag/AgCl is taken as a reference electrode, ZnO nanowires are transversely grown between the vertical graphene sheets by setting the deposition temperature to be 80-100 ℃, the deposition time to be 1-1.5 h and the deposition potential to be-1.0-0.8V; finally, washing and drying the obtained product by using deionized water.
2. The method for preparing the graphene-ZnO composite material for the ultraviolet detector according to claim 1, wherein the method comprises the following steps: before the step (1), the method further comprises the following steps: cleaning a reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment by adopting oxygen plasma; in the cleaning process: the temperature of the sample stage is 700-800 ℃, and the power of the oxygen plasma is 800-1000W; the cleaning time is 80-100 min.
3. The method for preparing the graphene-ZnO composite material for the ultraviolet detector according to claim 1, wherein the method comprises the following steps: before the step (1), the method further comprises the following steps: the substrate is ultrasonically cleaned by immersing in an isopropanol or acetone solution, then rinsed with deionized water, and then dried with nitrogen.
4. The method for preparing the graphene-ZnO composite material for the ultraviolet detector according to claim 1, wherein the method comprises the following steps: in the step (1), the flow rate of the methane is 1-30 sccm; the flow rate of the hydrogen gas was 20 sccm.
5. The method for preparing the graphene-ZnO composite material for the ultraviolet detector according to claim 1, wherein the method comprises the following steps: in the step (1), after deposition is finished, the reaction chamber is cooled to room temperature under the argon atmosphere, and then the reaction chamber is emptied and the substrate with the vertical graphene sheets is taken out.
6. The method for preparing the graphene-ZnO composite material for the ultraviolet detector according to claim 1, wherein the method comprises the following steps: in the step (2), the zinc source is zinc nitrate solution or zinc acetate, and the surfactant is hexamethylenetetramine; the ratio of the amount of the zinc source to the amount of the surfactant is 1: 1.
7. a graphene-ZnO composite material for an ultraviolet detector is characterized in that: the graphene-ZnO composite material for the ultraviolet detector is prepared by the method for preparing the graphene-ZnO composite material for the ultraviolet detector as claimed in any one of claims 1to 6.
8. An ultraviolet detector, characterized by: the graphene-ZnO composite material for the ultraviolet detector comprises a photosensitive layer, wherein the graphene-ZnO composite material for the ultraviolet detector is adopted in the photosensitive layer.
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| CN101886281A (en) * | 2010-06-30 | 2010-11-17 | 长春理工大学 | Si-ZnO one-dimensional nano material and preparation method thereof |
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| CN101476155A (en) * | 2008-12-30 | 2009-07-08 | 长春理工大学 | Electrochemical deposition preparation for Mg doped ZnO nano-wire |
| CN101886281A (en) * | 2010-06-30 | 2010-11-17 | 长春理工大学 | Si-ZnO one-dimensional nano material and preparation method thereof |
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