CN205335089U - Plasma chemical vapor deposition's graphite alkene nanometer wall based on electromagnetic field is reinforceed - Google Patents
Plasma chemical vapor deposition's graphite alkene nanometer wall based on electromagnetic field is reinforceed Download PDFInfo
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Abstract
The utility model relates to a plasma chemical vapor deposition's graphite alkene nanometer wall based on electromagnetic field is reinforceed, including substrate, graphite alkene wall array and a plurality of graphite alkene branching, the perpendicular length of graphite alkene wall array is in it is on the substrate, a plurality of graphite alkene branching length is in graphene sheet one side or both sides. The utility model discloses a method graphite alkene wall growth rate has compared several times of improvements with the conventional art, there is not the reunion between the graphite alkene layer and piles up, be favorable to follow -up preparation ultracapacitor system, nano particle's absorption during lithium ion capacitor, and then be favorable to improving the dispersion of nano particle in graphene sheet, simultaneously regard as medium and masterplate to carry out nano particle's growth with the graphite alkene wall and the graphite alkene branching of high surface area, the ultracapacitor system's that the reunion of nano particle in thermal treatment and follow -up use and improvement that can be very big obtained with the graphite alkene nanometer wall preparation of this invention specific capacitance and conductivity can have effectively been avoided.
Description
Technical field
This utility model relates to the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening, belongs to the technical field of electronic materials of energy storage material and appliance component。
Background technology
Graphene (Graphene) is a kind of closely packed monoatomic layer of carbon atom, jointly found by the two of Univ Manchester UK scientist An Delie Jim and Ke Siteyanuowo love that disappears in 2004, be subject to domestic and international extensive concern owing to having good light transmission, electric conductivity and high mechanical strength。Through the development of 6～7 years, Graphene possessed suitable research and application in electronic device, photoelectricity, the energy。Graphene is a kind of to have high conductivity and big specific capacity and become the carbon based material of desirable ultracapacitor, but the theoretical capacity of Graphene is not high, graphene-based electrode production process is susceptible to stacking phenomenon, causes that material specific surface area and ionic conductivity decline。Therefore, developing suitable preparation method, Graphene being modified or forms combination electrode material with other materials is a kind of effectively solution route。Graphene nano wall is grown by plasma chemical vapor deposition, every layer of nm wall more has 1-10 layer graphene, there is nearly all excellent properties of Graphene, orthotropic Graphene wall and be grown on the Graphene bifurcated on wall and can increase the surface area of Graphene in limited Substrate Area greatly simultaneously, the graphene nano wall surface area that growth obtains is much larger than single-layer graphene。This utility model is to electromagnetic field, the surface plasma concussion growth to graphene nano wall, the catalytic action that Graphene wall is grown by gold nano grain is studied, and describes a kind of graphene nano wall preparation method based on surface plasma concussion strengthening plasma activated chemical vapour deposition。The graphene nano wall prepared can be used for the making of ultracapacitor, lithium-ion capacitor and flexible electrode。
Ultracapacitor (supercapacitor, ultracapacitor) is one of electrochemical energy storage technology of most application prospect。It is again double layer capacitor (ElectricalDoule-LayerCapacitor), electrochemical capacitor (ElectrochemcialCapacitor, EC), gold electric capacity, farad capacitor, carrys out energy storage by polarized electrolytic matter。Ultracapacitor can be considered to suspend the porous electrode plate of two reactionless activity in the electrolyte, pole plate powers up, positive plate attracts the anion in electrolyte, negative plate attracts cation, actually form two capacitive accumulation layers, the cation being separated is near negative plate, anion is near positive plate, it it is electrode (Electrode) outside porous electrode plate, inner side is carbon back (Carbon) material, it is electrolyte (Electrolyte) between two porous electrode plates, it is provided with in the middle of electrolyte and is used for stopping that positive and negative charge passes through every (Separator)。Ultracapacitor stores energy by forming the double electrical layers of electrolyte ion at electrode surface。Owing to electrochemical reaction does not occur ultracapacitor in charge and discharge process, therefore its cycle-index is typically larger than 1,000,000 times。As super capacitor material, it has less internal resistance, it may be achieved high power charging-discharging, and the power product such as electric motor car, battery of mobile phone is had profound significance。Meanwhile, the memory capacity of ultracapacitor is more high than traditional capacitor, is therefore expected to become desirable novel energy memory element。Carbon-based material as ultracapacitor needs bigger specific surface area, good electrolyte wellability, good electric conductivity and relatively low internal resistance。Past, commonly used carbon-based material had activated carbon, NACF, charcoal-aero gel and CNT。Wherein activated carbon capillary limited amount, capacity is less, when activated carbon specific surface area reaches 1200m2During/g, specific capacity no longer increases。Although CNT has the specific surface area of superelevation, specific capacity is also very big, but since expensive, and cost of manufacture is high, is difficult to large-scale production at present and prepares。Therefore these materials are not desirable super capacitor material at present。
The patent that existing publication number is CN202473615U specifically discloses a kind of Graphene wall preparation method based on plasma activated chemical vapour deposition。But it is poor that simple plasma activated chemical vapour deposition prepares Graphene wall construction, between wall and wall, spacing is relatively big, and does not have extra Graphene bifurcated on Graphene wall, and the lifting for surface area is limited。Additionally, the graphene nano wall not past surface modification does not have amphipathic property, follow-up use liquid (such as electrolyte) cannot infiltrate inside nm wall, causes that effective surface area is minimum。How further to improve the preparation of the Graphene wall based on plasma activated chemical vapour deposition, carry out surface modification simultaneously, become a bottleneck of graphene nano wall application。
Summary of the invention
This utility model is to provide the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening to solve above-mentioned technical problem。
The technical scheme that this utility model solves above-mentioned technical problem is as follows: the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening, including substrate, Graphene wall array and multiple Graphene bifurcated, graphene film in described Graphene wall array is vertically long over the substrate, multiple described Graphene bifurcated length each graphene film one or both sides in described Graphene wall array。
The beneficial effects of the utility model are: owing to multiple described Graphene bifurcated length are in described graphene film one or both sides, this graphene nano wall surface area greatly improves, it is absent from the reunion between graphene layer and stacking, be conducive to follow-up preparing ultracapacitor, the absorption of nano-particle during lithium-ion capacitor, and then be conducive to improving nano-particle dispersion in graphene film, carry out the growth of nano-particle using Graphene wall and the Graphene bifurcated of high surface as medium and masterplate simultaneously, nano-particle reuniting and ratio electric capacity and the conductivity of the ultracapacitor prepared with the graphene nano wall of this invention can be improved greatly in heat treatment and follow-up use procedure can be effectively prevent。
On the basis of technique scheme, this utility model can also do following improvement。
The graphene nano wall of this utility model a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening as mentioned above, further, in described Graphene wall array, graphene film thickness is 1-20 nanometer, is highly 1-5 micron, and described Graphene bifurcated is made up of 1 to 10 layer of single-layer graphene。
The graphene nano wall of this utility model a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening as mentioned above, further, in described Graphene wall array, the distance between graphene film is 10-200 nanometer。
The graphene nano wall of this utility model a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening as mentioned above, further, described substrate has gold nano grain, and in described Graphene wall array, graphene film is grown on described gold nano grain。
The graphene nano wall of this utility model a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening as mentioned above, further, described gold nano grain particle diameter is 1-20 nanometer。
Above-mentioned a kind of graphene nano wall based on the plasma activated chemical vapour deposition of electromagnetic field strengthening can be obtained by following manufacture method, comprises the following steps:
Step 1), using plasma strengthens chemical vapour deposition (CVD) and long graphene film occurs: using the plasma of carbonaceous gas as carbon source presoma, at Si, Cu, Ni or SiO2Grown graphene nano wall, simultaneously around growth substrates and on the direction of vertical described substrate an additional voltage and/or on the direction that growth substrates is parallel with plasma flow velocity applying magnetic field, plasma is subject to a Coulomb force pointing to substrate and/or a Lorentz force pointing to substrate, to strengthen plasma attachment on substrate and growth；
Above-mentioned at Si, Cu, Ni or SiO2The degree of being grown to of Grown graphene nano wall is 650-1000 degree Celsius；An additional voltage U around growth substrates and on the direction of vertical described substrate, is being the distance between voltage sheet both positive and negative polarity with this by applying electrostatic field E=U/D, a D pointing to substrate on the plasma presoma of substrate。Due to the effect of electric field, plasma (quantity of electric charge is q) is subject to pointing to the Coulomb force F=E*q of substrate, and generation acceleration is a=Eq/ m, m are plasma presoma quality。
Being parallel in the plasma enhanced chemical vapour deposition of plasma stream at substrate, substrate length is L, the time t=L/v of plasma flowing through substrate, and plasma flow center is d from substrate distance。Due to the flow constant of plasma stream, flow velocity also keeps constant。The minimum requirements of magnetic field intensity is B=(2dmQ2)/(qvL2S2)；
Step 2), in the process of growth graphene nano wall, add O2,Ar,N2,NH3,H2The plasma presoma bombardment Graphene wall of O (g) carries out surface modification, and adulterate O, N or OH group simultaneously, and this plasma precursor gas flow is the 1-20% of carbon source precursor gas flow。This step can improve hydrophilic the groups such as O, N, OH that simultaneously adulterate greatly, improves Graphene and compares electric capacity。
Above-mentioned steps 1) using plasma strengthens before chemical vapour deposition (CVD) wet in the contracting of substrate surface by gold nanometer film and then at Grown gold nano grain。
Above-mentioned gold nanometer film can pass through heat evaporation, magnetron sputtering, ion sputtering, or the mode of ald is at Si, Ni, Cu, SiO2One layer of gold nanometer film of Grown, its thickness is 1-20 nanometer；Deposited the substrate of gold nanometer film at protective gas (such as N2, Ar) in 600-900 degree Celsius of heat treatment 2h；By the contracting of gold nanometer film wet (Dewetting), form gold nano grain (cluster) at substrate surface。
Described in above-mentioned manufacture method, gold nano grain particle diameter is 1-20 nanometer。
Above-mentioned manufacture method has on the substrate of gold nano grain in growth and is an additional light frequency electromagnetic field on 45 degree of directions with substrate。Described smooth frequency electromagnetic field is 10MHz-optical frequency。
Adopt and above-mentioned further provide the benefit that: when light frequency electromagnetic field runs into gold nano grain, surface plasma concussion, strengthening electromagnetic field intensity on substrate can be produced in gold nano grain and substrate interface。The electromagnetic field of strengthening can strengthen Graphene greatly in the forming core of substrate surface and growth。
Carbon source presoma flow described in above-mentioned manufacture method is Q, Q=1ml/min-10L/min, and the cross-sectional area of the plasma channel of carbon source presoma is S, then plasma flow velocity is v=Q/S。
At substrate transverse in the plasma enhanced chemical vapour deposition of plasma stream, electric field be there is no minima requirement。Being parallel in the plasma enhanced chemical vapour deposition of plasma stream at substrate, substrate length is L, the time t=L/v of plasma flowing through substrate, and plasma flow center is d from substrate distance, and the minimum requirement of electric field intensity is E=(2dmQ2)/(qL2S2)。
This utility model having the advantage that compared with prior art
1, the graphene nano wall surface area that prepared by the method greatly improves, it is absent from the reunion between graphene layer and stacking, be conducive to follow-up preparing ultracapacitor, the absorption of nano-particle during lithium-ion capacitor, and then be conducive to improving nano-particle dispersion in Graphene, simultaneously carry out the growth of nano-particle using Graphene wall and the Graphene bifurcated of high surface as medium and masterplate, it is to avoid nano-particle reunion in heat treatment and follow-up use procedure。Ratio electric capacity and the conductivity of the ultracapacitor prepared with the graphene nano wall of this invention can be improved greatly。
2, the hydrophobicity of graphene nano wall is extremely strong, and in subsequent applications, liquid (such as electrolyte) cannot infiltrate inside nm wall, causes that effective surface area is minimum, at growth O2,N2,NH3,H2O (g) plasma carries out the graphene nano wall of surface modification and greatly improves its amphipathic property, therefore no matter it is in aqueous solution or organic solution, adopts the performance of the electronic devices such as ultracapacitor prepared by graphene nano wall of the present utility model to be all increased dramatically。
3, the nanogold particle between graphene nano wall and substrate can resistance between effective relatively low Graphene and substrate interface, the electrical property of boost device。
Accompanying drawing explanation
Fig. 1 is the graphene nano wall schematic diagram of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening of this utility model；
Fig. 2 be this utility model a kind of based on electromagnetic field strengthening plasma activated chemical vapour deposition graphene nano wall manufacture method in electric field-enhanced plasma increase chemical vapour deposition (CVD) schematic diagram；
Fig. 3 be this utility model a kind of based on electromagnetic field strengthening plasma activated chemical vapour deposition graphene nano wall manufacture method in magnetic field-intensification plasma increase chemical vapour deposition (CVD) schematic diagram；
Fig. 4 is for deposited the substrate schematic diagram of gold nano grain (cluster)；
Fig. 5 is for deposited the surface plasma concussion schematic diagram on the substrate of gold nano grain (cluster)；
CV figure in Fig. 6 conventional graphite alkene wall electrode of super capacitor KOH aqueous solution electrolysis liquid；
Fig. 7 conventional graphite alkene wall electrode of super capacitor CV figure in TEABF4/AN organic electrolyte；
The graphene nano wall electrode of the plasma activated chemical vapour deposition that Fig. 8 strengthens based on electromagnetic field CV figure in KOH aqueous solution electrolysis liquid；
The graphene nano wall electrode of the plasma activated chemical vapour deposition that Fig. 9 strengthens based on electromagnetic field CV figure in TEABF4/AN organic electrolyte。
* electric capacity/Graphene wall and nanoparticle mass are surveyed to obtain than electric capacity=reality；Electric current density=test electric current/Graphene and nano-particle effective surface area。
In accompanying drawing, the list of parts representated by each label is as follows:
1, substrate, 2, graphene film, 3, Graphene bifurcated, 4, gold nano grain, 5, additional negative electrode, 6, additional anelectrode, 7, the plasma stream affected by electric field, 8 plasma streams, 9, electrostatic field direction, 10, plasma stream affected by magnetic fields, 11, outward magnetic field intensity inwards, 12 smooth frequency electromagnetic fields。
Detailed description of the invention
Below in conjunction with accompanying drawing, principle of the present utility model and feature being described, example is served only for explaining this utility model, is not intended to limit scope of the present utility model。
As shown in Figure 1, a kind of graphene nano wall of the plasma activated chemical vapour deposition based on electromagnetic field strengthening, including substrate 1, Graphene wall array and multiple Graphene bifurcated 3, graphene film 2 in described Graphene wall array is vertically long on described substrate 1, long graphene film 2 one or both sides in described Graphene wall array of multiple described Graphene bifurcateds 3。
Preferably, described substrate having gold nano grain 4, the graphene film in described Graphene wall array is grown on described gold nano grain。Described graphene film thickness is 1-20 nanometer, is highly 1-5 micron, and described Graphene bifurcated is made up of 1 to 10 layer of single-layer graphene, and thickness is 0.3-10 nanometer；The distance between graphene film 2 in described Graphene wall array is 10-200 nanometer。
The preparation method that the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening of this utility model can pass through in following example obtains:
Embodiment 1
Do substrate with silicon chip, adopt PECVD, produce graphene nano wall, at the gold nanometer film of grown above silicon 5 nanometers。
Step 1: the mode being deposited with by heat grows one layer of gold nanometer film on a si substrate, its thickness is 5 nanometers。
Step 2: deposited the substrate of gold nanometer film in step 1 at protective gas N2In in 600-900 degree Celsius of heat treatment 2h；As shown in Figure 4, by the contracting of gold nanometer film wet (Dewetting), forming gold nano grain (cluster) at substrate surface, it is of a size of 2-10 nanometer。
Step 3: the preparation of graphene nano wall: with CH4The substrate obtained in step 2, as presoma, is heated to 650-1000 degree Celsius by the plasma of gas in PECVD reacting furnace；By PECVD at Grown graphene nano wall, simultaneously, as shown in Figure 2, an additional voltage U in substrate perimeter vertical direction, namely the additional anelectrode in one end 6, the additional negative electrode 5 of the other end, with this by the plasma presoma of substrate applies electrostatic field E9, a CH pointing to substrate4The parallel substrate flow of plasma 8 of gas, the plasma stream 7 that part is affected by electric field points to substrate direction；Electric field intensity is according to E=(2dmQ2)/(qL2S2) calculate, applying voltage is 220 volts；Meanwhile, as it is shown on figure 3, on the direction that substrate is parallel with plasma flow velocity an additional magnetic field intensity be the magnetic field of B；Magnetic field intensity is according to B=(2dmQ2)/(qvL2S2) calculate, in reaction chamber 12, magnetic field intensity 11 from outside to inside adopts 0.5 tesla, CH4The parallel substrate flow of plasma 8 of gas, part plasma stream 10 affected by magnetic fields points to substrate direction。
While graphene nano wall grows, as shown in Figure 5, between the Si substrate of growth gold nano grain, angle is an additional light frequency electromagnetic field (10MHz) on 45 degree of directions, when electromagnetic field runs into gold nano grain, surface plasma concussion, strengthening electromagnetic field intensity on substrate can be produced in gold nano grain and substrate interface。The electromagnetic field of strengthening can strengthen Graphene greatly in the forming core of substrate surface and growth。
While graphene nano wall grows, adopt O2Plasma bombardment (Ionimplantation) graphene nano wall carries out surface modification, doping OH group, the flow of plasma presoma is 1-20scc, air pressure is 10-100Pa, plasma exciatiaon source is 10-1000MHz, after growing 5 minutes, the graphene nano wall of 1 micron highly can be obtained。
Embodiment 2
Do substrate with copper sheet, adopt PECVD, produce graphene nano wall。Gold nanometer film grown above silicon 10 nanometers。
Step 1: grow one layer of gold nanometer film on a si substrate by magnetron sputtering mode, its thickness is 10 nanometers。
Step 2: the substrate that deposited gold nanometer film described in step 1 is at protective gas (N2, Ar) in 600-900 degree Celsius of heat treatment 2h。As shown in Figure 4, by the contracting of gold nanometer film wet (Dewetting), forming gold nano grain (cluster) at substrate surface, it is of a size of 5-15 nanometer。
Step 3: the preparation of graphene nano wall: with CH4Deng the plasma of gas of carbon containing as presoma, the substrate obtained in step 2 is heated to 650-1000 degree Celsius in PECVD reacting furnace；By PECVD at Grown graphene nano wall；
Graphene nano wall grow while, as in figure 2 it is shown, in substrate perimeter vertical direction an additional voltage U, with this by the plasma presoma of substrate apply one point to substrate electrostatic field E, electric field intensity is according to E=(2dmQ2)/(qL2S2) calculate, applying voltage is 220 volts。
While graphene nano wall grows, as it is shown on figure 3, an additional magnetic field intensity is the magnetic field of B on the direction that substrate is parallel with plasma flow velocity。Magnetic field intensity is according to B=(2dmQ2)/(qvL2S2) calculate, magnetic field intensity adopts 0.5 tesla。
While graphene nano wall grows, as shown in Figure 5, between the copper sheet substrate of growth gold nano grain, angle is an additional electromagnetic field (1000MHz) on 45 degree of directions, when electromagnetic field runs into gold nano grain, surface plasma concussion, strengthening electromagnetic field intensity on substrate can be produced in gold nano grain and substrate interface。The electromagnetic field of strengthening can strengthen Graphene greatly in the forming core of substrate surface and growth。
While graphene nano wall grows, adopt NH3, plasma bombardment (Ionimplantation) graphene nano wall carries out surface modification, and adulterate O group；The flow of plasma presoma is 1-20scc, and air pressure is 10-100MPa, and plasma exciatiaon source is 10-1000MHz, and after growing 30 minutes, can obtain is highly the graphene nano wall of 3 microns。
Embodiment 3
Do substrate with silicon chip, adopt PECVD, produce graphene nano wall。Gold nanometer film grown above silicon 20 nanometers。
Step 1: grow one layer of gold nanometer film on a si substrate by the mode of ion sputtering, its thickness is 20 nanometers。
Step 2: the substrate that deposited gold nanometer film described in step 1 is at protective gas (N2, Ar) in 600-900 degree Celsius of heat treatment 2h。As shown in Figure 4, by the contracting of gold nanometer film wet (Dewetting), forming gold nano grain (cluster) at substrate surface, it is of a size of 10-20 nanometer。
Step 3: the preparation of graphene nano wall: with CH4Deng the plasma of gas of carbon containing as presoma, the substrate obtained in step 2 is heated to 650-1000 degree Celsius in PECVD reacting furnace。By PECVD at Grown graphene nano wall；
Graphene nano wall grow while, as in figure 2 it is shown, in substrate perimeter vertical direction an additional voltage U, with this by the plasma presoma of substrate apply one point to substrate electrostatic field E, electric field intensity is according to E=(2dmQ2)/(qL2S2) calculate, applying voltage is 220 volts。
While graphene nano wall grows, as it is shown on figure 3, an additional magnetic field intensity is the magnetic field of B on the direction that substrate is parallel with plasma flow velocity。Magnetic field intensity is according to B=(2dmQ2)/(qvL2S2) calculate, magnetic field intensity adopts 0.5 tesla；
While graphene nano wall grows, as shown in Figure 5, between growth is by the silicon chip substrate of gold nano grain, angle is an additional light frequency electromagnetic field (10MHz-optical frequency) on 45 degree of directions, when electromagnetic field runs into gold nano grain, surface plasma concussion, strengthening electromagnetic field intensity on substrate can be produced in gold nano grain and substrate interface。The electromagnetic field of strengthening can strengthen Graphene greatly in the forming core of substrate surface and growth。
While graphene nano wall grows, adopt N2Plasma bombardment (Ionimplantation) graphene nano wall carries out surface modification, and adulterate N group。The flow of plasma presoma is 1-20scc, and air pressure is 10-100MPa, and plasma exciatiaon source is 10-1000MHz, and after growing 60 minutes, can obtain is highly the graphene nano wall of 5 microns。
Graphene nano wall (graphene film and Graphene bifurcated) fast growth prepared by this utility model embodiment, within the shortest 5 minutes, 1 micron can be grown to, and owing to adopting gold nanometer film contracting wet (Dewetting) to form gold nano grain at substrate surface, graphene film is grown in gold nano grain, spacing-controllable between graphene film in Graphene wall array。
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all within spirit of the present utility model and principle, any amendment of making, equivalent replacement, improvement etc., should be included within protection domain of the present utility model。
Claims (5)
1. the graphene nano wall based on the plasma activated chemical vapour deposition of electromagnetic field strengthening, it is characterized in that, including substrate, Graphene wall array and multiple Graphene bifurcated, graphene film in described Graphene wall array is vertically long over the substrate, multiple described Graphene bifurcated length each graphene film one or both sides in described Graphene wall array。
2. the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening according to claim 1, it is characterized in that, in described Graphene wall array, graphene film thickness is 1-20 nanometer, is highly 0.5-5 micron, and described Graphene bifurcated is made up of 1 to 10 layer of single-layer graphene。
3. the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening according to claim 1, it is characterised in that the distance between graphene film in described Graphene wall array is 10-200 nanometer。
4. the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening according to any one of claims 1 to 3, it is characterized in that, having gold nano grain on described substrate, in described Graphene wall array, graphene film is grown on described gold nano grain。
5. the graphene nano wall of a kind of plasma activated chemical vapour deposition based on electromagnetic field strengthening according to claim 4, it is characterised in that described gold nano grain particle diameter is 1-20 nanometer。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489394A (en) * | 2015-12-30 | 2016-04-13 | 广州墨储新材料科技有限公司 | Fabricating method for graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition |
| CN108565130A (en) * | 2018-04-08 | 2018-09-21 | 中国科学技术大学 | A kind of graphene membrane electrode and preparation method thereof, surface have the graphene composite film interdigital electrode of conducting wire, capacitor |
| CN109713050A (en) * | 2018-12-24 | 2019-05-03 | 香港中文大学（深圳） | A kind of graphene-ZnO composite material and preparation method and ultraviolet detector |
| CN112125298A (en) * | 2020-08-20 | 2020-12-25 | 中国科学院宁波材料技术与工程研究所 | Substrate rapid screening method for graphene with vertical structure |
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2015
- 2015-12-30 CN CN201521142521.7U patent/CN205335089U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489394A (en) * | 2015-12-30 | 2016-04-13 | 广州墨储新材料科技有限公司 | Fabricating method for graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition |
| CN105489394B (en) * | 2015-12-30 | 2018-01-23 | 广州墨羲科技有限公司 | The graphene nano wall preparation method for the plasma activated chemical vapour deposition strengthened based on electromagnetic field |
| CN108565130A (en) * | 2018-04-08 | 2018-09-21 | 中国科学技术大学 | A kind of graphene membrane electrode and preparation method thereof, surface have the graphene composite film interdigital electrode of conducting wire, capacitor |
| CN108565130B (en) * | 2018-04-08 | 2020-12-25 | 中国科学技术大学 | Graphene film electrode, preparation method thereof, graphene composite film interdigital electrode with conductive circuit on surface and capacitor |
| CN109713050A (en) * | 2018-12-24 | 2019-05-03 | 香港中文大学（深圳） | A kind of graphene-ZnO composite material and preparation method and ultraviolet detector |
| CN112125298A (en) * | 2020-08-20 | 2020-12-25 | 中国科学院宁波材料技术与工程研究所 | Substrate rapid screening method for graphene with vertical structure |
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