CN109695020A - Mn-W-Cu-O base sputtering target and preparation method thereof - Google Patents
Mn-W-Cu-O base sputtering target and preparation method thereof Download PDFInfo
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- CN109695020A CN109695020A CN201810547267.0A CN201810547267A CN109695020A CN 109695020 A CN109695020 A CN 109695020A CN 201810547267 A CN201810547267 A CN 201810547267A CN 109695020 A CN109695020 A CN 109695020A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
Abstract
Project is to provide inhibition paradoxical discharge, and can carry out stablizing Mn-W-Cu-O base sputtering target of film forming and preparation method thereof.Solution is a kind of sputtering target, is at the Mn-W-Cu-O base sputtering target in being grouped as containing Mn, W, Cu and O, wherein relative density is 90% or more, and resistivity is 9 × 10‑4Ω cm or less.
Description
Technical field
In particular, the present invention relates to the useful Mn-W-Cu-O base sputtering targets of the formation of the recording layer to optical information recording medium
And preparation method thereof.
Background technique
In recent years, in the field of optical information recording medium (CD), with the increase etc. of processing data, it is desirable that CD
High capacity.CD is roughly divided into read-only and recordable type, recordable type be further subdivided into write-once type and erasable rewritable type this 2
Class.As the recording layer material of write-once type, organic color material has been extensively studied in the past, but with large capacity in recent years
Change, inorganic material is also widely studied.
As the useful recording mode for using inorganic material, there is the recording mode using following situation: by containing
The recording layer of the low inorganic oxide of decomposition temperature irradiates laser, the physical property variation of recording layer, and optical constant changes therewith.As
Inorganic oxide material, palladium oxide are practical, but since Pd is noble metal, material cost is high, can generation it is desirable to develop
The recording layer realized for palladium oxide with cheap material cost.
The material of abundant good recording characteristic is obtained as with cheap material cost, is developed comprising Mn oxide system
The recording layer of material.For example, in patent document 1, discloses Mn-W-Zn-Cu-O system recording layer etc. and contain Mn oxide and more
The recording layer of kind inorganic elements, and it is used to form the sputtering target of the recording layer.
Existing technical literature
Patent document
Patent document 1: International Publication No. 2013/183277.
Summary of the invention
Problems to be solved by the invention
As the sputtering method for being used to form the aforementioned recording layer comprising a variety of inorganic elements such as Mn oxide and W, have use comprising
The polynary sputtering method of a variety of sputtering targets of each element, and the method using 1 composite sputtering target containing multiple element.In patent
In document 1, the main reason for disclosing polynary sputtering method, but device enlargement, become cost increase, and it is easy to produce group
The shortcomings that at deviation.It is therefore preferable that using the sputtering of 1 composite sputtering target.In addition, from the viewpoint of production capacity, with height
RF sputtering is compared, it is expected that being sputtered using direct current (DC).
But it in the composite sputtering target comprising a variety of inorganic elements such as Mn oxide and W, is easy containing WMnO4Deng absolutely
Edge particle.In DC sputtering, due to applying DC voltage to composite sputtering target, so because of the insulated particle in composite sputtering target
Influence and in the case where being unable to get sufficient electric conductivity, have the anxiety for being abnormal electric discharge (arc discharge).Due to the film forming
In paradoxical discharge, recording layer is damaged, yield rate is caused to reduce.
The present invention develops in view of the foregoing, its purpose is to provide: even DC is sputtered, it also can inhibit abnormal put
Electricity, and can carry out stablizing Mn-W-Cu-O base sputtering target of film forming and preparation method thereof.
The means to solve the problem
To reach above-mentioned purpose, the present invention provides a kind of sputtering target, be in being grouped as containing the Mn-W- of Mn, W, Cu and O
Cu-O base sputtering target, wherein relative density is 90% or more, and resistivity is 9 × 10-4Ω cm or less.
Aforesaid ingredients composition may is that total 100 atom %, Mn relative to Mn, W and Cu are 4 atom of atom % ~ 40 %, W
It is 10 atom of atom % ~ 40 % for 10 atom of atom % ~ 70 %, Cu.
Aforementioned sputtering target can aforesaid ingredients composition in further containing selected from Mo, Nb, Mg, Ag, Ru, Ni, Zr, Sn, Bi,
The element of at least one or more of Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb.
Relative to the total 100 atom % of the constitution element in addition to O, it is aforementioned selected from Mo, Nb, Mg, Ag, Ru, Ni, Zr,
Total containing ratio of at least one kind of element of Sn, Bi, Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb can be former for 8 atom % ~ 70
Sub- %.
The relative density of aforementioned sputtering target can be 94% or more.
In addition, the present invention provides a kind of preparation method, and it is the preparation method of aforementioned Mn-W-Cu-O base sputtering target, packet
It includes: will contain containing manganese powder end, mixed-powder wet mixed 10 hours or more the mixed processes containing tungsten powder and containing copper powders, and
After aforementioned mixed processes, by aforementioned mixed-powder in the at a temperature of sintering process that is sintered more than 750 DEG C.
Can be aforementioned end containing manganese powder is manganese oxide powder, and the aforementioned tungsten powder that contains is tungsten metal powder, aforementioned to contain copper powder
End is metallic copper powder.
Aforementioned mixed-powder can further contain: comprising selected from Mo, Nb, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al,
The monomer of at least one kind of element of Pd, Ga, Te, V, Si, Ta, Cr and Tb or the powder of compound.
The effect of invention
According to the present invention, it is possible to provide even DC is sputtered, also can inhibit paradoxical discharge, and can carry out stablizing the Mn-W- of film forming
Cu-O base sputtering target and preparation method thereof.
Specific embodiment
Present embodiment is illustrated in detail below.
[Mn-W-Cu-O base sputtering target]
Mn-W-Cu-O base sputtering target involved in present embodiment is at, containing Mn, W, Cu and O, relative density is in being grouped as
90% or more, and resistivity is 9 × 10-4Ω cm or less.Mn-W-Cu-O system involved in present embodiment is sputtered below
Target is referred to as " target ".
It can be suitable for selection according to purpose without specifically limited as the ingredient ratio of target involved in present embodiment.Such as it can
To be, it is that 10 atom of atom % ~ 70 %, Cu are that total 100 atom %, Mn relative to Mn, W and Cu, which are 4 atom of atom % ~ 40 %, W,
10 atom of atom % ~ 40 %.
Target involved in present embodiment can be as needed containing other at being grouped as.By being suitable for containing other members
Element, such as in order to form the recording layer of information recording carrier in the case where use target, can adjust the transmissivity, anti-of recording layer
Penetrate rate and recording sensitivity.As element, for example, can enumerate selected from Mo, Nb, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co,
At least one kind of element of Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb.
Containing selected from above-mentioned Mo, Nb, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr
In the case where at least one kind of element of Tb, total containing ratio can be for example set as: relative to removed in the constitution element of target O (oxygen) with
The 100 atom % of total of outer constitution element is 8 atom of atom % ~ 70 %.
It should be noted that the target without containing Zn compared with the target containing Zn, can easily improve the relative density of target.Cause
This, does not contain Zn preferably in target.
Target is evaluated at being grouped as through X-ray diffraction method.The acquirement of the X ray diffracting spectrum of target can be according to conventional side
Method carries out.It is, for example, possible to use Rigaku Corporation (Co., Ltd.'s リ ガ Network) system SmartLab, to target surface into
Row θ -2 θ scanning, to obtain map.The determination condition of X-ray diffraction is suitable for determination according to target, such as can be from condition below
Selection in range.
X-ray source: Cu-K alpha ray
Output setting: 20kV ~ 100kV, 10mA ~ 100mA
Measurable angle range: 2 θ=5 ° ~ 80 °
Scanning speed: 1 ° ~ 4 ° (2 θ/min), continuous scannings
Divergent slit: 0.5 ° ~ 2 °
Scatter slit: 0.5 ° ~ 2 °
By optical slits: 0.1mm ~ 0.5mm.
Target detects in following range at the main diffraction maximum being grouped as:
The diffraction maximum of W: 40.26 ° ± 0.3 °, 58.27 ° ± 0.3 °
MnWO4Diffraction maximum: 29.8 ° ± 0.3 °, 30.23 ° ± 0.3 °
The diffraction maximum of MnO: 35.16 ° ± 0.3 °, 40.99 ° ± 0.3 °, 59.18 ° ± 0.3 °
The diffraction maximum of Cu: 43.47 ° ± 0.3 °, 50.67 ° ± 0.3 °.
As indicating that target involved in present embodiment is highdensity index, relative density is used in the present specification.
The relative density of target is 90% or more, preferably 94% or more.The the relative density of target the high the more preferred.
It should be noted that relative density refers to: imagination when calculating relative to the filling of raw material powder 100% for assuming target is close
Degree, by the sintered actual density of raw material powder (raw material point).In order to calculate relative density, first the dimension measurement of progress target and
Weight measurement, calculates actual density.Then, relative density is calculated using following calculating formula.
Relative density (%)=(actual density/imaginary density of sintered body) × 100
In addition, using resistivity in the present specification as indicating that target involved in present embodiment is low-resistance index.Target
Resistivity be 9 × 10-4Ω cm is hereinafter, preferably 8 × 10-4Ω cm is hereinafter, more preferably 6 × 10-4Ω·cm.Target
The resistivity the low the more preferred.
Resistivity meter measurement can be used in the resistivity of target.For example, using resistivity meter (Mitsubishi Chemical
The MCP-T610 of Analytech Co., Ltd. (Mitsubishi, Co., Ltd. chemistry ア Na リ テ ッ Network) system) measurement.
It should be noted that the shape of target involved in present embodiment without any restriction, can be set as it is discoid, cylindric,
The arbitrary shapes such as tetragonal plate, rectangle tabular, square plate can be suitable for selection according to the purposes of target.In addition, for
The width of target and the size (being diameter in circular situation) of depth, can also be in the range of mm grades ~ m grades or so, according to target
Purposes be suitable for selection.Such as in the case where target is circular situation, general diameter is 50mm ~ 300mm or so.It is also same for thickness
Sample, but usually 1mm ~ 20mm or so.
Target involved in present embodiment is sputtered by meeting aforementioned relative density and resistivity the two conditions for DC
When, become the target that can inhibit the generation of paradoxical discharge, this results in the confirmations of the present inventor.In addition, also confirming, appoint if only meeting
One condition inhibits the generation of paradoxical discharge with being then unable to fully.In addition, though target is especially the note to optical information recording medium
The formation for recording layer is useful, but purposes has no any restriction.
[preparation method of Mn-W-Cu-O base sputtering target]
Then, the preparation method of target involved in present embodiment is illustrated.Preparation method involved in present embodiment
Including mixed processes and sintering process.
Firstly, by mixed processes, it will be containing containing manganese powder end, the mixed-powder wet mixed containing tungsten powder and containing copper powders
10 hours or more.
As containing manganese powder end, it can be suitable for selection according to purpose, the powder etc. of the monomer comprising Mn or compound can be enumerated.
Wherein, preferred Mn oxide.As Mn oxide, such as Mn can be used3O4、Mn2O3、MnO、MnO2、MnO3、Mn2O7Deng.They
It can be used alone and a kind or be used in combination of two or more.In above-mentioned Mn oxide, according to the relationship of sintering temperature and fusing point, preferably
Mn3O4。
It as the average grain diameter at the end containing manganese powder, is not particularly limited, such as 3 μm ~ 7 μm or so can be set as.
It can be suitable for selection according to purpose, such as the tungsten metal powder of the monomer comprising W can be enumerated as tungsten powder is contained
Deng.
It as the average grain diameter containing tungsten powder, is not particularly limited, such as 2 μm ~ 5 μm or so can be set as.
It can be suitable for selection according to purpose, such as the metallic copper powder of the monomer comprising Cu can be enumerated as copper powders are contained
Deng.
It as the average grain diameter containing copper powders, is not particularly limited, such as 1 μm ~ 4 μm or so can be set as.
In addition, according to the desired purpose of the sputtering target of preparation, in mixed-powder can also containing it is above-mentioned containing manganese powder end,
Containing tungsten powder and containing other powder other than copper powders.As other powder, such as can enumerate: comprising selected from Mo, Nb,
The monomer of at least one kind of element of Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb or change
Close the powder of object.
It can be suitable for selection according to purpose, such as can enumerate using previous without specifically limited as the method for wet mixed
The wet mixing process etc. of well known ball-milling device.
The wet mixed time is set as 10 hours or more.It, can be by mixed-powder by the way that incorporation time to be set as 10 hours or more
It is sufficiently mixed.Especially in the case where using Mn oxide as containing manganese powder end, the manganese being related in acceleration of sintering is aoxidized
The solid phase reaction of object inhibits the residual of the crystalline phase of manganese oxide after being sintered.Incorporation time is preferably set to 12 hours or more, more preferably
It is set as 16 hours or more, is further preferably set as 20 hours or more.If mixing 24 hours, mixed effect saturation.
Then by sintering process, by mixed-powder more than 750 DEG C at a temperature of be sintered.
It can be suitable for selection according to purpose, such as can enumerate in an inert gas atmosphere without specifically limited as sintering process
Hot pressing, hot isostatic pressing method (HIP method, Hot Isostatic Pressing) etc..
By by mixed-powder more than 750 DEG C at a temperature of be sintered, can inhibit the knot of the insulators such as manganese oxide after sintering
The residual of crystal phase.Sintering temperature may be, for example, 800 DEG C or more, can also be 850 DEG C or more, can also be 900 DEG C or more.
Sintering time is not particularly limited, and can be suitable for selecting, and can be set to the sintering in 1 hour ~ 6 hours or so usually carried out
Time.
It can be suitable for adjusting in addition, be also not particularly limited for the pressure that applies in sintering, but preferred 200kgf/cm2
Left and right.It should be noted that 1kgf/cm2It is equivalent to 98.1kPa.
It can prepare that relative density is 90% or more and resistivity is 9 × 10 by the above process-4Ω cm Mn- below
W-Cu-O base sputtering target.
It should be noted that in preparation method involved in present embodiment, in addition to above-mentioned mixed processes and sintering process,
It may also comprise other processes.As other processes, such as it can enumerate to form the shape of sputtering target and carry out, is mixed
Close the molding procedure of powder.
Embodiment
Then, the embodiment of the present invention is illustrated, but the present invention is not limited to these embodiments.
[preparation of sputtering target]
<embodiment 1>
In embodiment 1, as raw material powder, following powder has been prepared.
Mn3O4Powder (purity: 99.9% or more, average grain diameter: 5 μm)
W powder (purity: 99.9% or more, average grain diameter: 2 μm)
Cu powder (purity: 99.9% or more, average grain diameter: 1.5 μm)
Above-mentioned raw materials powder is weighed, so that respectively the ratio containing metal is Mn:W:Cu=30:40:30 (atom %).By weighing
Each raw material powder, 3 times of total weight of zirconia ball (diameter 5mm) of each raw material powder and alcohol (ethyl alcohol) are put into container, are used
Ball-milling device carries out 12 hours wet mixeds.After mixed-powder drying, the sieve that aperture is 500 μm is crossed.Then, to above-mentioned
Mixed-powder applies 2 hours, 200kgf/cm under 900 DEG C of sintering temperature2Pressure, in an inert gas atmosphere carry out heat
Pressure, prepares sputtering target.The shape of sputtering target be it is discoid, having a size of diameter 50mm.
<embodiment 2>
In example 2, except the wet mixed time to be set as 24 hours, sintering temperature is set as other than 920 DEG C, by with implementation
The identical method of example 1 prepares sputtering target.
<comparative example 1>
In comparative example 1, in addition to the wet mixed time is set as 2 hours, sputtering is prepared by method same as Example 1
Target.
<comparative example 2>
In comparative example 2, in addition to sintering temperature is set as 750 DEG C, sputtering target is prepared by method same as Example 1.
<comparative example 3>
In comparative example 3, except the wet mixed time to be set as 2 hours, sintering temperature is set as other than 750 DEG C, by with implementation
The identical method of example 1 prepares sputtering target.
[evaluation]
For the sputtering target prepared in above-described embodiment 1 and 2 and Comparative Examples 1 and 2 and 3, relative density determination, resistance are carried out
The ingredient evaluation of rate measurement, the measurement of paradoxical discharge number and crystalline phase.Each evaluation is following to be carried out.Obtained evaluation result is shown
For in table 1.
<relative density>
In order to calculate the relative density of the sputtering target prepared in above-described embodiment 1 and 2 and Comparative Examples 1 and 2 and 3, sputtered
The dimension measurement and weight of target measure, and calculate actual density.Then, relative density is calculated using following calculating formula.
Relative density (%)=(actual density/sintered body imaginary density of sintered body) × 100
<resistivity>
Use resistivity meter (Mitsubishi Chemical Analytech Co., Ltd. (Mitsubishi, Co., Ltd. chemistry ア
Na リ テ ッ Network) system MCP-T610) electricity of sputtering target that is prepared in above-described embodiment 1 and 2 and Comparative Examples 1 and 2 and 3 of measurement
Resistance rate.
<measurement of paradoxical discharge number>
It is made of copper that the sputtering target prepared in above-described embodiment 1 and 2 and Comparative Examples 1 and 2 and 3 with In solder flux is bonded in anaerobic
On backing plate.These sputtering targets are mounted on sputtering equipment, are vacuum-evacuated to 1 × 10-4After Pa or less, Ar gas and O are imported2
Pressure in device is set as 0.3Pa by gas.Ratio (the O of oxygen2/Ar+O2) it is set as 70%.Apply 5W/cm with DC power supply2Electric power, into
Row sputtering in 30 minutes, with the number of the paradoxical discharge in the measurement sputtering of arc discharge counter.
[table 1]
According to result above, confirmation meets Mn-W- involved in the Examples 1 and 2 of the two conditions of relative density and resistivity
In Cu-O base sputtering target, paradoxical discharge number is inhibited.In the ratio for meeting any one condition in relative density and resistivity
In the case where compared with example 1 and 2, if, although paradoxical discharge number is reduced, cannot say can compared with the comparative example 3 being not satisfied
It is suppressed to degree that can be practical.In addition, confirmation relative density and resistivity are by the mixed of the preparation condition as sputtering target
Close the influence of time and sintering temperature.
Claims (8)
1. sputtering target is at the Mn-W-Cu-O base sputtering target in being grouped as containing Mn, W, Cu and O, wherein
Relative density is 90% or more, and resistivity is 9 × 10-4Ω cm or less.
2. sputtering target according to claim 1, wherein total 100 atom %, Mn relative to Mn, W and Cu be 4 atom % ~
40 atom %, W are that 10 atom of atom % ~ 70 %, Cu are 10 atom of atom % ~ 40 %.
3. sputtering target according to claim 1 or 2, wherein it is described in being grouped as further containing selected from Mo, Nb,
The element of at least one or more of Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb.
4. sputtering target according to claim 3, wherein relative to the 100 atom % of total of the constitution element in addition to O, institute
State at least one kind of member selected from Mo, Nb, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb
Total containing ratio of element is 8 atom of atom % ~ 70 %.
5. sputtering target described according to claim 1 ~ any one of 4, wherein relative density is 94% or more.
6. preparation method is the preparation method of Mn-W-Cu-O base sputtering target described in any one of claim 1 ~ 5, packet
It includes:
It will contain containing manganese powder end, mixed-powder wet mixed 10 hours or more the mixed processes containing tungsten powder and containing copper powders,
With
After the mixed processes, by the mixed-powder in the at a temperature of sintering process that is sintered more than 750 DEG C.
7. preparation method according to claim 6, wherein the end containing manganese powder is manganese oxide powder, described to contain tungsten powder
End is tungsten metal powder, and the copper powders that contain are metallic copper powder.
8. preparation method according to claim 6 or 7, wherein the mixed-powder further contains: comprising selected from Mo,
The monomer of at least one kind of element of Nb, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, Pd, Ga, Te, V, Si, Ta, Cr and Tb or
The powder of compound.
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| JP7061543B2 (en) * | 2018-09-19 | 2022-04-28 | デクセリアルズ株式会社 | Mn-Nb-W-Cu-O-based sputtering target and its manufacturing method |
| JP7162647B2 (en) * | 2020-09-15 | 2022-10-28 | Ｊｘ金属株式会社 | Cu-W-O sputtering target and oxide thin film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4208395A (en) * | 1978-12-05 | 1980-06-17 | Continental Oil Company | Removal of sulfur dioxide from flue gas |
| TW201403593A (en) * | 2012-06-04 | 2014-01-16 | Sony Corp | Recording layer, information recording medium, and target |
| CN107109636A (en) * | 2015-11-05 | 2017-08-29 | 迪睿合株式会社 | Mn Zn O classes sputtering target materials and its manufacture method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2572310B2 (en) * | 1991-04-30 | 1997-01-16 | 太陽誘電株式会社 | Composition for thermistor |
| JPWO2017159561A1 (en) * | 2016-03-14 | 2019-01-17 | パナソニックＩｐマネジメント株式会社 | Information recording medium and method for manufacturing information recording medium |
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2017
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4208395A (en) * | 1978-12-05 | 1980-06-17 | Continental Oil Company | Removal of sulfur dioxide from flue gas |
| TW201403593A (en) * | 2012-06-04 | 2014-01-16 | Sony Corp | Recording layer, information recording medium, and target |
| CN107109636A (en) * | 2015-11-05 | 2017-08-29 | 迪睿合株式会社 | Mn Zn O classes sputtering target materials and its manufacture method |
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| JP6377230B1 (en) | 2018-08-22 |
| CN117867451A (en) | 2024-04-12 |
| TW201917229A (en) | 2019-05-01 |
| JP2019077900A (en) | 2019-05-23 |
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