CN109690405A - 抗蚀剂下层膜形成用组合物 - Google Patents

抗蚀剂下层膜形成用组合物 Download PDF

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CN109690405A
CN109690405A CN201780054941.5A CN201780054941A CN109690405A CN 109690405 A CN109690405 A CN 109690405A CN 201780054941 A CN201780054941 A CN 201780054941A CN 109690405 A CN109690405 A CN 109690405A
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CN109690405B (zh
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西田登喜雄
坂本力丸
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Nissan Chemical Corp
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Abstract

本发明的课题是提供新的抗蚀剂下层膜形成用组合物。解决手段是一种光刻用抗蚀剂下层膜形成用组合物，其包含：具有下述式(1)～式(3)所示的结构单元的共聚物、交联剂、有机酸催化剂、以及溶剂。(式中，R1各自独立地表示氢原子或甲基，R2表示碳原子数1～3的亚烷基，A表示保护基，R3表示具有四元环～七元环的内酯骨架、金刚烷骨架、三环癸烷骨架或降冰片烷骨架的有机基，R4表示至少1个氢原子被氟基取代、并且还可以具有至少1个羟基作为取代基的碳原子数1～12的直链状、支链状或环状的有机基。)

Description

抗蚀剂下层膜形成用组合物
技术领域
本发明涉及光刻用抗蚀剂下层膜形成用组合物，特别是涉及用于形成使其与抗蚀剂图案的密合性提高了的抗蚀剂下层膜的组合物，进而，涉及即使在形成薄的膜厚(例如25nm以下)的抗蚀剂下层膜的情况下对基板的涂布性也优异的抗蚀剂下层膜形成用组合物。
背景技术
在ArF液浸光刻、远紫外线(EUV)光刻中，要求抗蚀剂图案线宽的加工尺寸的微细化。在这样的微细的抗蚀剂图案的形成中，担心因为抗蚀剂图案与基底基板的接触面积变小，从而抗蚀剂图案的纵横比(抗蚀剂图案的高度/抗蚀剂图案的线宽)变大，易于发生抗蚀剂图案的坍塌。因此，对于与抗蚀剂图案接触的抗蚀剂下层膜或防反射膜，为了不发生上述坍塌，要求与抗蚀剂图案的高密合性。
报道了：在抗蚀剂下层膜中，为了表现与抗蚀剂图案的高密合性，使用包含内酯结构的抗蚀剂下层膜形成用组合物，从而相对于所得的抗蚀剂图案，密合性提高(专利文献1)。即，通过使用包含内酯结构那样的极性部位的抗蚀剂下层膜形成用组合物，从而可以期待对抗蚀剂图案的密合性提高，即使在微细的抗蚀剂图案中也可以防止抗蚀剂图案的坍塌。
然而，在ArF液浸光刻、远紫外线(EUV)光刻那样的、要求制作更微细的抗蚀剂图案的光刻工艺中，仅仅靠包含内酯结构作为抗蚀剂下层膜形成用组合物，对于防止抗蚀剂图案的坍塌而言可以说不充分。
为了实现抗蚀剂下层膜与抗蚀剂图案的高密合性，专利文献2中记载了使抗蚀剂下层膜的表面状态改性为碱性状态，能够抑制抗蚀剂图案的底部形状变为底切(undercut)形状的用于抗蚀剂下层膜形成用组合物的添加剂。另一方面，专利文献3中记载了通过使添加剂成分偏析于抗蚀剂下层膜的表面附近，从而能够抑制抗蚀剂图案的底部形状变为足部(footing)形状的抗蚀剂下层膜形成用组合物用添加剂。
专利文献4中记载了使抗蚀剂下层膜的表面状态改性为疏水性，使将抗蚀剂图案进行显影和用纯水进行冲洗时的拉普拉斯力降低，该抗蚀剂图案与上述抗蚀剂下层膜的密合性可以改善的用于抗蚀剂下层膜形成用组合物的添加剂。另一方面，专利文献5中记载了下述用于抗蚀剂下层膜形成用组合物的添加剂：在使用能够溶解抗蚀剂膜的溶剂将该抗蚀剂膜的未曝光部除去，以该抗蚀剂膜的曝光部作为抗蚀剂图案而残留的抗蚀剂图案形成方法中，通过调整抗蚀剂下层膜的表面附近的酸度，从而使抗蚀剂图案的截面形状为直(straight)形状同时该抗蚀剂图案与上述抗蚀剂下层膜的密合性可以改善。
专利文献6中记载了包含具有末端导入了磺基的结构单元的共聚物、交联剂、以及溶剂的光刻用抗蚀剂下层膜形成用组合物。而且，专利文献6所记载的发明可以提供下述抗蚀剂下层膜：发挥抑制在形成抗蚀剂下层膜时产生来源于交联催化剂成分的升华物的效果，能够形成下部几乎不具有底部拖尾形状的良好形状的抗蚀剂图案。
现有技术文献
专利文献
专利文献1：国际公开第03/017002号
专利文献2：国际公开第2013/058189号
专利文献3：国际公开第2010/074075号
专利文献4：国际公开第2015/012172号
专利文献5：国际公开第2015/146443号
专利文献6：日本特开2010-237491号公报
发明内容
发明所要解决的课题
近年来，抗蚀剂图案的微细化日益加速。为了抑制伴随抗蚀剂图案的微细化的图案倒塌，着眼于抗蚀剂下层膜与抗蚀剂图案的相互作用，进行了各种研究。作为其一，通过使抗蚀剂材料的成分与抗蚀剂下层膜的表面化学结合，从而期待抗蚀剂下层膜与抗蚀剂图案的密合性的提高。
因此，本发明的目的是提供，为了改善与抗蚀剂图案的密合性，而与抗蚀剂材料的成分交联的抗蚀剂下层膜形成用组合物。
用于解决课题的方法
本发明的第1方案是一种光刻用抗蚀剂下层膜形成用组合物，其包含：具有下述式(1)～式(3)所示的结构单元的共聚物、交联剂、有机酸催化剂、以及溶剂。
(式中，R1各自独立地表示氢原子或甲基，R2表示碳原子数1～3的亚烷基，A表示保护基，R3表示具有四元环～七元环的内酯骨架、金刚烷骨架、三环癸烷骨架或降冰片烷骨架的有机基，R4表示至少1个氢原子被氟基取代、并且还可以具有至少1个羟基作为取代基的碳原子数1～12的直链状、支链状或环状的有机基。)
上述共聚物可以为具有下述式(1)所示的结构单元、下述式(4)所示的结构单元和下述式(3)所示的结构单元的共聚物。
(式中，R1与上述式(1)、式(2)和式(3)的R1含义相同，R2和A与上述式(1)的R2和A含义相同，Y表示-O-基或-NH-基，R10表示至少1个氢原子可以被氟基或氯基取代、且可以具有苯氧基作为取代基的碳原子数1～12的直链状或支链状的烷基或羟基烷基，R4与上述式(3)的R4含义相同。)上述式(1)所示的结构单元为例如下述式(1a)所示的结构单元、下述式(1b)所示的结构单元、下述式(1c)所示的结构单元或下述式(1d)所示的结构单元。
(式中，R1和R2与上述式(1)的R1和R2含义相同，2个R5各自独立地表示氢原子、甲基或乙基，R6表示甲基或乙基，b表示0～3的整数，R7表示碳原子数1～6的直链状或支链状的烷基、或碳原子数1～6的直链状或支链状的烷氧基烷基，R8表示碳原子数1～6的直链状或支链状的烷氧基，R9表示氢原子、或碳原子数2～6的直链状或支链状的烷氧基羰基。)上述共聚物的重均分子量为例如1500～20000，优选为3000～15000。如果重均分子量小于1500，则得不到由包含上述共聚物的抗蚀剂下层膜形成用组合物形成的抗蚀剂下层膜的耐溶剂性，另一方面，如果重均分子量大于20000，则担心在调制抗蚀剂下层膜形成用组合物时，上述共聚物在溶剂中的溶解性恶化。
本发明的第2方案是一种抗蚀剂图案的形成方法，其包含下述工序：将本发明的第1方案的光刻用抗蚀剂下层膜形成用组合物涂布在基板上进行烘烤而形成厚度1nm～25nm的抗蚀剂下层膜的工序；在上述抗蚀剂下层膜上涂布抗蚀剂溶液进行加热而形成抗蚀剂膜的工序；经由光掩模将上述抗蚀剂膜通过选自KrF准分子激光、ArF准分子激光和远紫外线中的放射线进行曝光的工序；以及在上述曝光后通过显影液进行显影的工序。
发明效果
通过将本发明涉及的抗蚀剂下层膜形成用组合物应用于光刻工艺，从而在所形成的抗蚀剂下层膜的表面存在来源于该组合物所包含的共聚物的式(1)所示的结构单元的、通过保护基被封闭的异氰酸酯基。然后，在上述抗蚀剂下层膜上形成抗蚀剂膜时的加热时，通过上述保护基被脱保护而生成的异氰酸酯基(-N＝C＝O)与抗蚀剂材料的成分发生化学结合。因此，上述抗蚀剂下层膜与抗蚀剂图案的密合性改善，其结果能够防止抗蚀剂图案的倒塌。此外，通过将本发明涉及的抗蚀剂下层膜形成用组合物涂布成薄膜，从而即使在EUV光刻工艺那样的、要求使用超薄膜的抗蚀剂下层膜的工艺中也能够使用。
具体实施方式
[共聚物]
本发明的抗蚀剂下层膜形成用组合物所使用的共聚物为具有上述式(1)～式(3)所示的结构单元的共聚物、或具有上述式(1)所示的结构单元、上述式(4)所示的结构单元和上述式(3)所示的结构单元的共聚物。
上述式(1)所示的结构单元具有被保护基封闭的异氰酸酯基，该保护基通过加热而脱保护，生成异氰酸酯基。作为这样的结构单元，可举出例如，下述式(1-1)～式(1-20)所示的结构单元。
作为上述式(2)所示的结构单元，可举出例如，下述式(2-1)～式(2-16)所示的结构单元。作为上述式(2)所示的结构单元的R3，选择具有导入到抗蚀剂溶液中的聚合物的骨架(环状结构)的有机基。
作为上述式(3)所示的结构单元，可举出例如，下述式(3-1)～式(3-6)所示的结构单元。上述式(3)所示的结构单元具有使由包含具有该结构单元的共聚物的组合物制作的膜为疏水性的作用、和改善该组合物的涂布性的作用。
作为形成上述式(4)所示的结构单元的单体，可举出例如，(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸2-羟基-3-苯氧基丙酯、(甲基)丙烯酸2-羟基-3-氯丙酯、N-(2-羟基丙基)(甲基)丙烯酰胺和3-(全氟丁基)-2-羟基丙基(甲基)丙烯酸酯。而且，作为上述式(4)所示的结构单元，可举出例如，下述式(4-1)～式(4-12)所示的结构单元。
[交联剂]
本发明的抗蚀剂下层膜形成用组合物还包含交联剂。作为上述交联剂，可举出例如，六甲氧基甲基三聚氰胺、四甲氧基甲基苯胍胺、1,3,4,6-四(甲氧基甲基)甘脲(POWDERLINK1174)、1,3,4,6-四(丁氧基甲基)甘脲、1,3,4,6-四(羟基甲基)甘脲、1,3-双(羟基甲基)脲、1,1,3,3-四(丁氧基甲基)脲和1,1,3,3-四(甲氧基甲基)脲。上述交联剂的含有比例相对于上述共聚物为例如1质量％～50质量％。
[有机酸催化剂]
本发明的抗蚀剂下层膜形成用组合物还包含有机酸催化剂。上述有机酸催化剂为促进交联反应的催化剂成分，可举出例如，对甲苯磺酸、三氟甲磺酸、吡啶-对甲苯磺酸盐、吡啶-对羟基苯磺酸盐、水杨酸、樟脑磺酸、5-磺基水杨酸、4-氯苯磺酸、4-苯酚磺酸、4-苯酚磺酸甲酯、苯二磺酸、1-萘磺酸、柠檬酸、苯甲酸和羟基苯甲酸等磺酸化合物和羧酸化合物。可以单独含有1种这些有机酸催化剂，也可以以2种以上的组合含有。上述有机酸催化剂的含有比例相对于上述交联剂为例如0.1质量％～20质量％。
[溶剂]
本发明的抗蚀剂下层膜形成用组合物还包含溶剂。作为上述溶剂，可举出例如，丙二醇单甲基醚(PGME)、丙二醇单甲基醚乙酸酯(PGMEA)、丙二醇单乙基醚、丙二醇单丙基醚、甲基乙基酮、乳酸乙酯、环己酮、γ-丁内酯、N-甲基吡咯烷酮、和从这些溶剂中选择的2种以上的混合物。上述溶剂的含有比例相对于上述抗蚀剂下层膜形成用组合物为例如50质量％～99.5质量％。
[其它添加物]
本发明的抗蚀剂下层膜形成用组合物根据需要可以进一步含有表面活性剂。表面活性剂为用于提高上述抗蚀剂下层膜形成用组合物对基板的涂布性的添加物，可以使用非离子系表面活性剂、氟系表面活性剂那样的公知的表面活性剂。作为上述表面活性剂的具体例，可以举出例如，聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯鲸蜡基醚、聚氧乙烯油基醚等聚氧乙烯烷基醚类、聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚等聚氧乙烯烷基芳基醚类、聚氧乙烯/聚氧丙烯嵌段共聚物类、失水山梨糖醇单月桂酸酯、失水山梨糖醇单棕榈酸酯、失水山梨糖醇单硬脂酸酯、失水山梨糖醇单油酸酯、失水山梨糖醇三油酸酯、失水山梨糖醇三硬脂酸酯等失水山梨糖醇脂肪酸酯类、聚氧乙烯失水山梨糖醇单月桂酸酯、聚氧乙烯失水山梨糖醇单棕榈酸酯、聚氧乙烯失水山梨糖醇单硬脂酸酯、聚氧乙烯失水山梨糖醇三油酸酯、聚氧乙烯失水山梨糖醇三硬脂酸酯等聚氧乙烯失水山梨糖醇脂肪酸酯类等非离子系表面活性剂、エフトップ〔注册商标〕EF301、エフトップEF303、エフトップEF352(三菱マテリアル电子化成(株)制)、メガファック〔注册商标〕F171、メガファックF173、メガファックR-30、メガファックR-40、メガファックR-40-LM(DIC(株)制)、フロラードFC430、フロラードFC431(住友スリーエム(株)制)、アサヒガード〔注册商标〕AG710、サーフロン〔注册商标〕S-382、サーフロンSC101、サーフロンSC102、サーフロンSC103、サーフロンSC104、サーフロンSC105、サーフロンSC106(旭硝子(株)制)等氟系表面活性剂、有机硅氧烷聚合物KP341(信越化学工业(株)制)。可以单独含有1种这些表面活性剂，也可以以2种以上的组合含有。在上述抗蚀剂下层膜形成用组合物含有表面活性剂的情况下，上述表面活性剂的含有比例相对于上述共聚物为例如0.1质量％～5质量％，优选为0.2质量％～3质量％。
实施例
以下举出实施例更具体地说明本发明，但本发明不限定于下述实施例。
本说明书的下述合成例1～合成例3所示的重均分子量为由凝胶渗透色谱(以下，本说明书中简称为GPC。)得到的测定结果。测定使用東ソー(株)制GPC装置，使用了四氢呋喃(THF)作为溶剂。此外，本说明书的下述合成例所示的分散度由测定的重均分子量和数均分子量算出。
＜合成例1＞
向甲基丙烯酸2-(O-[1’-甲基亚丙基氨基]羧基氨基)乙酯18.33g(昭和电工(株)制，商品名：カレンズ〔注册商标〕MOI-BM)、甲基丙烯酸金刚烷基酯10.00g(大阪有机工业(株)制)、甲基丙烯酸1,1,1,3,3,3-六氟异丙酯7.14g(东京化成工业(株)制)和1-十二烷硫醇1.53g(东京化成工业(株)制)中加入丙二醇单甲基醚92.11g，然后将烧瓶内利用氮气进行置换并升温直到70℃。作为聚合引发剂，将溶解于丙二醇单甲基醚60.87g中的偶氮二异丁腈(AIBN)1.24g在氮加压下添加在上述烧瓶内，使其反应24小时，获得了包含具有下述式(1-2)所示的结构单元、下述式(2-9)所示的结构单元和下述式(3-4)所示的结构单元的共聚物的溶液。对所得的包含共聚物的溶液进行了GPC分析，结果该溶液中的共聚物以标准聚苯乙烯换算而得的重均分子量为6070，分散度为1.98。
＜合成例2＞
向甲基丙烯酸2-(O-[1’-甲基亚丙基氨基]羧基氨基)乙酯7.00g(昭和电工(株)制，商品名：カレンズ〔注册商标〕MOI-BM)、N-异丙基丙烯酰胺1.96g(东京化成工业(株)制)、甲基丙烯酸1,1,1,3,3,3-六氟异丙酯2.73g(东京化成工业(株)制)和1-十二烷硫醇1.53g(东京化成工业(株)制)中加入丙二醇单甲基醚38.23g，然后将烧瓶内利用氮气进行置换并升温直到70℃。作为聚合引发剂，将溶解于丙二醇单甲基醚23.25g中的偶氮二异丁腈(AIBN)0.47g在氮加压下添加在上述烧瓶内，使其反应24小时，获得了包含具有下述式(1-2)所示的结构单元、下述式(4-12)所示的结构单元和下述式(3-4)所示的结构单元的共聚物的溶液。对所得的包含共聚物的溶液进行了GPC分析，结果该溶液中的共聚物以标准聚苯乙烯换算而得的重均分子量为5996，分散度为1.85。
＜合成例3＞
将对苯二甲酸二缩水甘油酯(ナガセケムテックス(株)制，商品名：デナコール〔注册商标〕EX711)20.00g、5-羟基间苯二甲酸(东京化成工业(株)制)12.54g和乙基三苯基溴化(シグマアルドリッチ社制)1.28g加入到丙二醇单甲基醚135.27g中并使其溶解。将反应容器进行氮气置换后，在135℃下反应4小时，获得了聚合物溶液。该聚合物溶液即使冷却到室温，也不发生白浊等，在丙二醇单甲基醚中的溶解性良好。进行了GPC分析，结果所得的溶液中的聚合物以标准聚苯乙烯换算而得的重均分子量为6758，分散度为1.64。本合成例中获得的聚合物具有下述式(5)所示的结构单元和式(6)所示的结构单元。
＜实施例1＞
在上述合成例1中获得的包含共聚物0.04g的溶液0.24g中，混合四甲氧基甲基甘脲(日本サイテックインダストリーズ(株)制，商品名：POWDERLINK1174)0.018g、和吡啶对甲苯磺酸盐(东京化成工业(株)制)0.0025g，加入丙二醇单甲基醚20.76g和丙二醇单甲基醚乙酸酯8.98g并使其溶解。然后使用孔径0.05μm的聚乙烯制微型过滤器进行过滤，制成光刻用抗蚀剂下层膜形成用组合物。
＜实施例2＞
在上述合成例2中获得的包含共聚物0.13g的溶液0.82g中，混合四甲氧基甲基甘脲(日本サイテックインダストリーズ(株)制，商品名：POWDERLINK〔注册商标〕1174)0.058g、和吡啶对甲苯磺酸盐(东京化成工业(株)制)0.0083g，加入丙二醇单甲基醚55.64g和丙二醇单甲基醚乙酸酯23.94g并使其溶解。然后使用孔径0.05μm的聚乙烯制微型过滤器进行过滤，制成光刻用抗蚀剂下层膜形成用组合物。
＜比较例1＞
向上述合成例3中获得的包含聚合物0.16g的聚合物溶液0.98g中混合四甲氧基甲基甘脲(日本サイテックインダストリーズ(株)制，商品名：POWDERLINK〔注册商标〕1174)0.039g、5-磺基水杨酸(东京化成工业(株)制)0.0039g和R-30(DIC(株)制)0.00078g，加入丙二醇单甲基醚13.03g和丙二醇单甲基醚乙酸酯5.94g并使其溶解。然后使用孔径0.05μm的聚乙烯制微型过滤器进行过滤，制成光刻用抗蚀剂下层膜形成用组合物。
(在光致抗蚀剂溶剂中的溶出试验)
将实施例1、实施例2和比较例1中调制的光刻用抗蚀剂下层膜形成用组合物分别通过旋涂器涂布在作为半导体基板的硅晶片上。将该硅晶片配置在加热板上，在205℃下烘烤1分钟，形成了膜厚25nm的抗蚀剂下层膜。将这些抗蚀剂下层膜浸渍在由丙二醇单甲基醚70质量％和丙二醇单甲基醚乙酸酯30质量％构成的溶剂中，进行了是否不溶于该溶剂的确认试验。其结果，在浸渍前与浸渍后膜厚没有变化。
(光致抗蚀剂图案的形成和抗蚀剂图案的密合性试验)
将实施例1和实施例2中调制的光刻用抗蚀剂下层膜形成用组合物分别通过旋涂器涂布于蒸镀了SiON膜的硅晶片上。将该晶片配置在加热板上，在205℃下烘烤1分钟，形成了膜厚5nm的抗蚀剂下层膜。进一步，将比较例1中调制的光刻用抗蚀剂下层膜形成用组合物通过旋涂器涂布于蒸镀了SiON膜的硅晶片。将该晶片配置在加热板上，在205℃下烘烤1分钟，形成了膜厚20nm的抗蚀剂下层膜。在这些抗蚀剂下层膜上，将市售的光致抗蚀剂溶液(住友化学(株)制，商品名：PAR855)通过旋涂器进行涂布，在加热板上在105℃下加热60秒而形成了光致抗蚀剂膜(膜厚0.10μm)。
接着，使用(株)ニコン制、NSR-S307E(波长193nm，NA：0.85，σ：0.65/0.93(Dipole))的扫描仪，通过光掩模以最佳曝光量进行曝光。光掩模根据应该要形成的抗蚀剂图案来选择。在曝光后，在加热板上，在105℃下进行60秒曝光后烘烤(PEB)，在冷却后，利用工业规格的60秒单桨(single paddle)式工序，使用0.26当量的四甲基氢氧化铵水溶液作为显影液进行显影。经过以上过程，形成了抗蚀剂图案。将线与间隙图案(以下，简称为L/S。)的形成可否的结果示于表1中。将形成了目标的L/S的情况表示为“良好”。
此外，通过使曝光量从上述最佳曝光量阶段性地增加，从而作为照射到L/S的间隙部的曝光量增加的结果，使形成的L/S的线宽逐渐变细。此时，将发生线图案倒塌的前一个阶段的线图案的线宽设为最小坍塌前尺寸，作为抗蚀剂图案的密合性的指标。表1示出其结果。该最小坍塌前尺寸的值越小，则暗示抗蚀剂下层膜与抗蚀剂图案的密合性越高。特别是在抗蚀剂图案的线宽微细的情况下，1nm的差是严重的。因此，该最小坍塌前尺寸即使小1nm也是极其优选的。
[表1]
最小坍塌前尺寸(nm) L/S的形成可否
实施例1 43nm 良好
实施例2 43nm 良好
比较例1 46nm 良好

Claims (5)

1.一种光刻用抗蚀剂下层膜形成用组合物，其包含：
具有下述式(1)～式(3)所示的结构单元的共聚物，
交联剂，
有机酸催化剂，以及
溶剂；
式中，R1各自独立地表示氢原子或甲基，R2表示碳原子数1～3的亚烷基，A表示保护基，R3表示具有四元环～七元环的内酯骨架、金刚烷骨架、三环癸烷骨架或降冰片烷骨架的有机基，R4表示至少1个氢原子被氟基取代、并且还可以具有至少1个羟基作为取代基的碳原子数1～12的直链状、支链状或环状的有机基。
2.一种光刻用抗蚀剂下层膜形成用组合物，其包含：
具有下述式(1)所示的结构单元、下述式(4)所示的结构单元和下述式(3)所示的结构单元的共聚物，
交联剂，
有机酸催化剂，以及
溶剂；
式中，R1各自独立地表示氢原子或甲基，R2表示碳原子数1～3的亚烷基，A表示保护基，Y表示-O-基或-NH-基，R10表示至少1个氢原子可以被氟基或氯基取代、且可以具有苯氧基作为取代基的碳原子数1～12的直链状或支链状的烷基或羟基烷基，R4表示至少1个氢原子被氟基取代、并且还可以具有至少1个羟基作为取代基的碳原子数1～12的直链状、支链状或环状的有机基。
3.根据权利要求1或2所述的光刻用抗蚀剂下层膜形成用组合物，所述式(1)所示的结构单元为下述式(1a)所示的结构单元、下述式(1b)所示的结构单元、下述式(1c)所示的结构单元或下述式(1d)所示的结构单元，
式中，R1和R2与所述式(1)的R1和R2含义相同，2个R5各自独立地表示氢原子、甲基或乙基，R6表示甲基或乙基，b表示0～3的整数，R7表示碳原子数1～6的直链状或支链状的烷基、或碳原子数1～6的直链状或支链状的烷氧基烷基，R8表示碳原子数1～6的直链状或支链状的烷氧基，R9表示氢原子、或碳原子数2～6的直链状或支链状的烷氧基羰基。
4.根据权利要求1～3中任一项所述的光刻用抗蚀剂下层膜形成用组合物，所述共聚物的重均分子量为1500～20000。
5.一种抗蚀剂图案的形成方法，其包含下述工序：将权利要求1～4中任一项所述的光刻用抗蚀剂下层膜形成用组合物涂布在基板上并进行烘烤，形成厚度1nm～25nm的抗蚀剂下层膜的工序；在所述抗蚀剂下层膜上涂布抗蚀剂溶液并进行加热，形成抗蚀剂膜的工序；利用选自KrF准分子激光、ArF准分子激光和远紫外线中的放射线，经由光掩模对所述抗蚀剂膜进行曝光的工序；以及在所述曝光后利用显影液进行显影的工序。
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