CN109666917A - A kind of diamond surface structure and preparation method thereof - Google Patents
A kind of diamond surface structure and preparation method thereof Download PDFInfo
- Publication number
- CN109666917A CN109666917A CN201811562083.8A CN201811562083A CN109666917A CN 109666917 A CN109666917 A CN 109666917A CN 201811562083 A CN201811562083 A CN 201811562083A CN 109666917 A CN109666917 A CN 109666917A
- Authority
- CN
- China
- Prior art keywords
- diamond
- metal pattern
- preparation
- sensitive material
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of diamond surface structure and preparation method thereof, and wherein preparation method is one kind using the non-metal pattern structure made from diamond surface as mask plate；Then it utilizes and diamond is grown by chemical vapour deposition technique with diamond compact non-metal pattern structure, diamond fills the full interstructural gap of non-metal pattern；The sample for having grown diamond is carried out to polish polishing, keeps the diamond upper surface of growth concordant with nonmetallic upper surface, removes non-metal pattern structure, the method that diamond surface structure is made.Specifically include step: (1) gluing, light-sensitive material are graphical；(2) non-metallic film is plated；(3)Lift-off；(4) CVD method grows diamond；(5) diaphragm polishes；(6) removal is nonmetallic, obtains diamond surface structure.Diamond surface structure top surface made from the method for the present invention is smooth, the complicated diamond surface structure that two or more layers can be prepared by repeating implementation.
Description
Technical field
The present invention relates to a kind of diamond surface structures and preparation method thereof.
Background technique
Since diamond has high hardness, thermal conductivity, insulating properties, light transmission rate and acidproof, heat-resisting, radiation hardness
Etc. excellent physics, chemical property, it is widely used in each field such as industry, scientific research.Simultaneously because high hard of diamond
Degree and chemical stability, it is extremely difficult to prepare micro nano structure in diamond surface.
Currently, the method that the preparation of diamond surface micro nano structure generallys use at present is to prepare resistance to quarter in diamond surface
Mask is lost, the diamond in the region of no mask protection is removed by dry etching, diamond micro nano structure is prepared.But
The diamond micro nano structure that such method is prepared, bottom out-of-flatness, appearance pattern is coarse, can not prepare complicated knot
Structure.
Patent document CN201710101533.2, which is disclosed, a kind of prepares single-crystal diamond counter opal using LB mask plate
Method, with SiO2Microballoon carries out diamond growth as mask plate, removes SiO2After obtain diamond lattic structure, due to its preparation
Process only polishes four side walls of diamond, not can guarantee the top that diamond has mask plate after diamond growth is complete
Face is straight；And the diamond lattic structure with single layer structure can only be made in this method, and structure is single, using being restricted.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of diamond surface structures and preparation method thereof.
In order to solve the above technical problem, the present invention provides technical solution it is as follows:
A kind of preparation method of diamond surface structure is provided, it is specifically a kind of with nonmetallic made from the diamond surface
Graphic structure is as mask plate；Then it utilizes and passes through chemical vapour deposition technique with the compact non-metal pattern structure of diamond
Diamond is grown, diamond fills the full interstructural gap of non-metal pattern；The sample for having grown diamond is carried out to polish throwing
Light keeps the diamond upper surface of growth concordant with nonmetallic upper surface, removes non-metal pattern structure, and diamond surface knot is made
The method of structure.
Further,
The preparation method specifically comprises the following steps:
(1) light-sensitive material graphic structure is prepared in diamond surface, obtaining surface has light-sensitive material graphic structure
Diamond chip；
(2) nonmetallic in one layer of the surface deposition of step (1) diamond chip obtained with light-sensitive material graphic structure
Film is denoted as sample one；
(3) non-metallic film for removing light-sensitive material and light-sensitive material surface, obtains the sample with non-metal pattern structure
Two；
(4) surface of the sample two made from step (3) grows diamond by chemical vapor deposition (CVD) method；
(5) after diamond growth is complete, there is the upper surface of non-metal pattern structure to polish polishing diamond, makes nonmetallic
Graphic structure is concordant with diamond growth face；
(6) non-metal pattern structure is removed to get diamond surface structure.
Further,
The method that light-sensitive material graphic structure is prepared in step (1) is preferably yellow light technique or nano-imprint process.
Preferably, the light-sensitive material is photoresist.
Further, the method for the non-metallic film on light-sensitive material and its surface is removed in step (3) are as follows: make step (2)
Sample one be put into solvent and be cleaned by ultrasonic, dissolve light-sensitive material, then using Lift-off technique removal light-sensitive material and
The non-metallic film on light-sensitive material surface.
Preferably, the solvent is acetone.
Further,
It is to deposit non-metallic film by film plating process such as electron beam evaporation plating or magnetron sputterings in step (2).
Further,
Non-metallic film in step (2) is preferably silicon dioxide film.
Further,
The method of removal non-metal pattern structure preferably uses HF to remove non-metal pattern structure in step (6), and HF is
It is removed for silicon dioxide film.
Further,
It further include being pre-processed to diamond chip before step (1), specifically: diamond is put into Piranha solution
In (concentrated sulfuric acid: hydrogen peroxide=7:3, volume ratio) impregnate 10 minutes, cleaned up after taking-up with deionized water.Then it is put into successively
Ultrasound 10 minutes, are dried with nitrogen after taking-up in acetone, aqueous isopropanol.
Further, it present invention is alternatively directed to technological gap in the prior art, provides and a kind of prepares multi-layer diamond table
The method of face structure, specifically say state single layer structure on the basis of, repeat step (1)~(5), include the following steps:
(1) light-sensitive material graphic structure is prepared in diamond surface, obtaining surface has light-sensitive material graphic structure
Diamond chip；
(2) nonmetallic in one layer of the surface deposition of step (1) diamond chip obtained with light-sensitive material graphic structure
Film is denoted as sample one；
(3) non-metallic film for removing light-sensitive material and light-sensitive material surface, obtains the sample with non-metal pattern structure
Two；
(4) surface of the sample two made from step (3) grows diamond by chemical vapor deposition (CVD) method；
(5) after diamond growth is complete, there is the upper surface of non-metal pattern structure to polish polishing diamond, makes nonmetallic
Graphic structure is concordant with diamond growth face；
(6) it is one or many that step (1)~(5) are repeated；
(7) non-metal pattern structure is removed to get diamond surface structure.
Such as: step (1)~(5) are repeated once, then step (7) is carried out, can be prepared by two layers of diamond surface structure；
Step (1)~(5) are repeated twice, then step (7) is carried out, can be prepared by three layers of diamond surface structure；And so on.
The present invention also provides diamond surface structure made from above-mentioned preparation method, diamond surface structure top surface is flat
It is whole.
The present invention also provides bilayer or multilayer complexity diamond surface structures made from above-mentioned preparation method.
Beneficial effects of the present invention are as follows:
The present invention is using micro-nano processing methods such as yellow light technique/nano impression, plated film, Lift-off in diamond surface system
Standby non-metal pattern structure is as mask plate；Then diamond is grown by chemical vapour deposition technique；Diamond will have been grown
Sample carries out polishing polishing, keeps the diamond upper surface of growth concordant with nonmetallic upper surface, removes non-metal pattern structure, i.e.,
Obtain diamond surface structure；Non-metallic layer graphical, growth diamond is repeated several times, polish polishing after remove non-metal pattern again
The diamond lattic structure of multilayer complexity can be obtained in structure.
Compared to scheme disclosed in documents CN201710101533.2, the two difference is as follows: (1)
CN201710101533.2 is with SiO2Microballoon carries out diamond growth as mask plate, and the present invention is by yellow light work
The SiO that the micro-nano technologies technique such as skill/nano impression, plated film, Lift-off is prepared2Etc. nonmetallic materials graphic structure
As mask plate；(2)
CN201710101533.2 only polishes four side walls of diamond chip after having grown diamond, and this hair
It is bright to there is the face of mask plate also to polish in diamond, it so can guarantee and guarantee that diamond has the top surface of mask plate straight, smooth；
(3)
The diamond lattic structure with single layer structure can only be made in CN201710101533.2, and structure is single, and energy of the present invention
The diamond lattic structure of multilayer complexity is made.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is that the process flow of 1 diamond surface structure preparation method of the embodiment of the present invention and diamond surface structure become
Change schematic diagram；
Fig. 2 is that the process flow of 3 diamond surface structure preparation method of the embodiment of the present invention and diamond surface structure become
Change schematic diagram.
Specific embodiment
Invention is further illustrated below with reference to examples and drawings, but is not intended to limit the scope of the invention.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of preparation method of mono-layer diamond surface texture and diamonds obtained
Surface texture, specific as follows:
(1) it is made first on 5mm × 5mm × 1mm cvd diamond surface by electron beam exposure (one kind of yellow light technique)
It is standby to obtain PMMA (polymethyl methacrylate, polymethyl methacrylate, the abbreviation that exposure area is 1mm × 1mm
PMMA is commonly called as organic glass) optical grating construction.
(2) SiO of 50nm thickness is then deposited in the above-mentioned diamond surface with PMMA optical grating construction by magnetron sputtering2
Layer, obtains sample one.
(3) sample one made from step (2) is put into acetone soln and is cleaned by ultrasonic, PMMA is dissolved, using Lift-
Off technique removes the SiO on PMMA light-sensitive material and PMMA light-sensitive material surface2Layer, is then dried with nitrogen, and being made has 1mm
The SiO of × 1mm area2The diamond surface structure of optical grating construction, is denoted as sample two.
(4) sample two is put into microwave plasma CVD (MPCVD) equipment, control diamond surface is raw
Long temperature is 950 DEG C, and growth obtains the diamond growth layer of 30~40nm thickness.
(5) diamond surface is polished into polishing using cast iron plate, makes SiO2Layer surface is concordant with diamond growth layer surface,
It is denoted as sample three；
(6) sample three is put into 10%HF solution and impregnates 3h, remove silica, then deionized water rinses drying,
Up to diamond surface optical grating construction.
Embodiment 2
The present embodiment provides a kind of preparation method of mono-layer diamond surface texture and diamond surface structure obtained, tools
Body is as follows:
(1) one is then spin coated onto one layer of PMMA light-sensitive material of 5mm × 5mm × 1mm cvd diamond surface spin coating first
Layer ultraviolet solidified nano imprints glue, obtains nano impression plastic structure using nano-imprint stamp coining, solidification；Then it etches successively
Nano impression glue residua layer and PMMA layers, the diamond of light-sensitive material bottom is exposed.
(2) SiO of 100nm thickness is deposited in the sample surfaces that step (1) obtains by magnetron sputtering2Layer.
(3) sample made from step (2) is put into acetone soln and is cleaned by ultrasonic, PMMA is dissolved, using Lift-off
Technique removes the SiO on PMMA light-sensitive material and PMMA light-sensitive material surface2Layer, is dried with nitrogen.It is prepared in diamond surface
SiO2Optical grating construction.
(4) sample made from step (3) is put into microwave plasma CVD (MPCVD) equipment, is controlled
Diamond surface growth temperature is 950 DEG C, and growth obtains the diamond growth layer of 60~80nm thickness.
(5) diamond surface is polished into polishing using cast iron plate, makes SiO2Layer surface is concordant with diamond growth layer surface.
(6) sample after step (5) polishing is put into 10%HF solution and impregnates 3h, remove silica, then go from
Sub- water rinses drying to get diamond surface optical grating construction.
Embodiment 3
As shown in Fig. 2, the present embodiment provides a kind of preparation method of double-deck diamond surface structure and diamonds obtained
Surface texture, specific as follows:
(1) exposure area is prepared by electron beam exposure on 5mm × 5mm × 0.5mm cvd diamond surface is
The PMMA structure of 1mm × 1mm.
(2) SiO of 50nm thickness is deposited as magnetron sputtering sample surfaces made from step (1)2Layer.
(3) sample made from step (2) is put into acetone soln and is cleaned by ultrasonic, PMMA is dissolved, using Lift-off
Technique removes the SiO on PMMA light-sensitive material and PMMA light-sensitive material surface2Layer, is dried with nitrogen.It is prepared in diamond surface
The SiO of 1mm × 1mm area2Structure.
(4) step (3) sample is put into microwave plasma CVD (MPCVD) equipment, controls diamond
Surface growth temperature is 950 DEG C, and growth obtains the diamond growth layer of 30~40nm thickness.
(5) diamond surface is polished into polishing using cast iron plate, makes SiO2Layer surface is concordant with diamond growth layer surface.
(6) exposure area is prepared as electron beam exposure sample same position obtained by step (5) is 1mm × 1mm
PMMA structure.
(7) SiO of 50nm thickness is deposited as magnetron sputtering sample surfaces made from step (6)2Layer.
(8) sample obtained by step (7) is put into acetone soln and is cleaned by ultrasonic, dissolved PMMA, be dried with nitrogen.In Buddha's warrior attendant
The SiO of 1mm × 1mm area is prepared in stone surface2Structure.
(9) sample obtained by step (8) is put into microwave plasma CVD (MPCVD) equipment, control gold
Hard rock surface growth temperature is 950 DEG C, and growth obtains the diamond growth layer of 30~40nm thickness.
(10) diamond surface is polished into polishing using cast iron plate, makes SiO2Layer surface and diamond growth layer surface are flat
Together.
(11) step (10) sample is put into 10%HF solution and impregnates 3h, remove silica, deionized water flushing is blown
It is dry, i.e., the double-deck diamond surface structure is prepared in diamond surface.
Embodiment 4
(1) in one layer of PMMA light-sensitive material of 5mm × 5mm × 1mm cvd diamond surface spin coating, it is then spin coated onto one layer of purple
Outer curing nano imprints glue, obtains nano impression plastic structure using nano-imprint stamp coining, solidification.Nano impression is etched successively
Glue residua layer and PMMA layers, the diamond of light-sensitive material bottom is exposed.
(2) SiO of 100nm thickness is deposited as magnetron sputtering sample surfaces obtained by step (1)2Layer.
(3) sample obtained by step (2) is put into acetone soln and is cleaned by ultrasonic, PMMA is dissolved, using Lift-off work
Skill removes the SiO on PMMA light-sensitive material and PMMA light-sensitive material surface2Layer, is dried with nitrogen.SiO is prepared in diamond surface2
Structure.
(4) sample obtained by step (3) is put into MPCVD equipment, control diamond surface growth temperature is 950 DEG C, raw
The long diamond growth layer for obtaining 60~80nm thickness.
(5) diamond surface is polished into polishing using cast iron plate, keeps SiO2 layer surface concordant with diamond growth layer surface.
Implementation steps (1)~(5) are being repeated twice with the identical position of sample obtained by step (5), finally by gained sample
Product, which are put into 10%HF solution, impregnates 9h, removes silica, and deionized water is rinsed drying, i.e., is prepared in diamond surface
Three layers of diamond surface structure.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, various changes and improvements may be made to the invention without departing from the spirit and scope of the present invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent defines.
Claims (9)
1. a kind of preparation method of diamond surface structure, which is characterized in that specifically a kind of with made from the diamond surface
Non-metal pattern structure is as mask plate；Then it utilizes and passes through chemical gaseous phase with the compact non-metal pattern structure of diamond
Sedimentation grows diamond, and diamond fills the full interstructural gap of non-metal pattern；The sample for having grown diamond is carried out
Polishing is polished, keeps the diamond upper surface of growth concordant with nonmetallic upper surface, removes non-metal pattern structure, diamond is made
The method of surface texture.
2. the preparation method of diamond surface structure according to claim 1, which is characterized in that be a kind of mono-layer diamond
The preparation method of surface texture, the preparation method specifically comprise the following steps:
(1) light-sensitive material graphic structure is prepared in diamond surface, obtains the Buddha's warrior attendant that there is light-sensitive material graphic structure on surface
Flag；
(2) one layer of non-metallic film, note are deposited in the surface of step (1) diamond chip obtained with light-sensitive material graphic structure
For sample one；
(3) non-metallic film for removing light-sensitive material and light-sensitive material surface, obtains the sample two with non-metal pattern structure；
(4) surface of the sample two made from step (3) grows diamond by chemical vapour deposition technique；
(5) after diamond growth is complete, there is the upper surface of non-metal pattern structure to polish polishing diamond, makes non-metal pattern
Structure is concordant with diamond growth face；
(6) non-metal pattern structure is removed to get diamond surface structure.
3. the preparation method of diamond surface structure according to claim 1, which is characterized in that specifically a kind of preparation is more
The preparation method of layer diamond surface structure, the preparation method include the following steps:
(1) light-sensitive material graphic structure is prepared in diamond surface, obtains the Buddha's warrior attendant that there is light-sensitive material graphic structure on surface
Flag；
(2) one layer of non-metallic film, note are deposited in the surface of step (1) diamond chip obtained with light-sensitive material graphic structure
For sample one；
(3) non-metallic film for removing light-sensitive material and light-sensitive material surface, obtains the sample two with non-metal pattern structure；
(4) surface of the sample two made from step (3) grows diamond by chemical vapor deposition (CVD) method；
(5) after diamond growth is complete, there is the upper surface of non-metal pattern structure to polish polishing diamond, makes non-metal pattern
Structure is concordant with diamond growth face；
(6) it is one or many that step (1)~(5) are repeated；
(7) non-metal pattern structure is removed to get diamond surface structure.
4. the preparation method of diamond surface structure according to claim 2 or 3, which is characterized in that
Deposition non-metallic film method is one of electron beam evaporation plating, magnetron sputtering or a variety of in step (2).
5. the preparation method of diamond surface structure according to claim 4, which is characterized in that
Non-metallic film in step (2) is silicon dioxide film.
6. the preparation method of diamond surface structure according to claim 4, which is characterized in that
The method of removal non-metal pattern structure is to remove non-metal pattern structure using HF in step (6).
7. the preparation method of diamond surface structure according to claim 2 or 3, which is characterized in that
It further include being pre-processed to diamond chip before step (1), specifically: diamond being put into Piranha solution and is soaked
Bubble 10 minutes, the Piranha solution is the concentrated sulfuric acid: the volume ratio of hydrogen peroxide is the mixed solution of 7:3, uses deionization after taking-up
Water cleans up；Then it is put into acetone, ultrasound 10 minutes in aqueous isopropanol successively, is dried with nitrogen after taking-up.
8. diamond surface structure made from the preparation method of any one diamond surface structure according to claim 1~3,
Diamond surface structure top surface is smooth.
9. bilayer or multilayer complexity diamond surface made from the preparation method of diamond surface structure according to claim 3
Structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811562083.8A CN109666917B (en) | 2018-12-20 | 2018-12-20 | Diamond surface structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811562083.8A CN109666917B (en) | 2018-12-20 | 2018-12-20 | Diamond surface structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109666917A true CN109666917A (en) | 2019-04-23 |
| CN109666917B CN109666917B (en) | 2021-03-23 |
Family
ID=66144019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811562083.8A Active CN109666917B (en) | 2018-12-20 | 2018-12-20 | Diamond surface structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109666917B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110329985A (en) * | 2019-06-18 | 2019-10-15 | 长沙新材料产业研究院有限公司 | A kind of diamond surface labyrinth and preparation method thereof |
| CN110670126B (en) * | 2019-09-30 | 2021-03-23 | 长沙新材料产业研究院有限公司 | Diamond with cantilever structure and preparation method thereof |
| CN114016127A (en) * | 2021-12-27 | 2022-02-08 | 长沙新材料产业研究院有限公司 | Method for constructing diamond structure pattern |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5240749A (en) * | 1991-08-27 | 1993-08-31 | University Of Central Florida | Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition |
| WO2006032480A1 (en) * | 2004-09-23 | 2006-03-30 | Cemecon Ag | Machining tool and method for the production thereof |
| CN101118378A (en) * | 2007-08-22 | 2008-02-06 | 武汉工程大学 | Preparation method of diamond surface graphics |
| CN101162645A (en) * | 2007-11-08 | 2008-04-16 | 上海交通大学 | Permanent magnet microstructure integrated manufacturing method of micro electro-mechanical systems |
| CN101203939A (en) * | 2005-01-11 | 2008-06-18 | 阿波罗钻石公司 | Diamond medical devices |
| US20130043213A1 (en) * | 2010-02-22 | 2013-02-21 | Meiyong Liao | Method for producing single-crystal diamond movable structure |
| JP2013053340A (en) * | 2011-09-02 | 2013-03-21 | Saitama Univ | Method for forming inorganic film having segment structure on friction contact surface |
| CN104651928A (en) * | 2015-01-17 | 2015-05-27 | 王宏兴 | Homogeneous epitaxial lateral growth method for diamond |
| CN106082113A (en) * | 2016-07-12 | 2016-11-09 | 中国科学院深圳先进技术研究院 | A kind of method utilizing micro Process to prepare three-dimensional microstructures at electrode surface |
| CN107287654A (en) * | 2017-07-14 | 2017-10-24 | 中国电子科技集团公司第四十六研究所 | A kind of method that CVD synthetic single crystal diamond reduces dislocation density |
| CN107758607A (en) * | 2017-09-29 | 2018-03-06 | 湖南大学 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
| CN108198752A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of method for preparing pattern on substrate |
| CN108190830A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of production method of high-aspect-ratio diamond micro nano structure |
| CN108630691A (en) * | 2018-03-26 | 2018-10-09 | 长江存储科技有限责任公司 | Three-dimensional storage and its manufacturing method |
-
2018
- 2018-12-20 CN CN201811562083.8A patent/CN109666917B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5240749A (en) * | 1991-08-27 | 1993-08-31 | University Of Central Florida | Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition |
| WO2006032480A1 (en) * | 2004-09-23 | 2006-03-30 | Cemecon Ag | Machining tool and method for the production thereof |
| CN101203939A (en) * | 2005-01-11 | 2008-06-18 | 阿波罗钻石公司 | Diamond medical devices |
| CN101118378A (en) * | 2007-08-22 | 2008-02-06 | 武汉工程大学 | Preparation method of diamond surface graphics |
| CN101162645A (en) * | 2007-11-08 | 2008-04-16 | 上海交通大学 | Permanent magnet microstructure integrated manufacturing method of micro electro-mechanical systems |
| US20130043213A1 (en) * | 2010-02-22 | 2013-02-21 | Meiyong Liao | Method for producing single-crystal diamond movable structure |
| JP2013053340A (en) * | 2011-09-02 | 2013-03-21 | Saitama Univ | Method for forming inorganic film having segment structure on friction contact surface |
| CN104651928A (en) * | 2015-01-17 | 2015-05-27 | 王宏兴 | Homogeneous epitaxial lateral growth method for diamond |
| CN106082113A (en) * | 2016-07-12 | 2016-11-09 | 中国科学院深圳先进技术研究院 | A kind of method utilizing micro Process to prepare three-dimensional microstructures at electrode surface |
| CN107287654A (en) * | 2017-07-14 | 2017-10-24 | 中国电子科技集团公司第四十六研究所 | A kind of method that CVD synthetic single crystal diamond reduces dislocation density |
| CN107758607A (en) * | 2017-09-29 | 2018-03-06 | 湖南大学 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
| CN108198752A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of method for preparing pattern on substrate |
| CN108190830A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of production method of high-aspect-ratio diamond micro nano structure |
| CN108630691A (en) * | 2018-03-26 | 2018-10-09 | 长江存储科技有限责任公司 | Three-dimensional storage and its manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110329985A (en) * | 2019-06-18 | 2019-10-15 | 长沙新材料产业研究院有限公司 | A kind of diamond surface labyrinth and preparation method thereof |
| CN110329985B (en) * | 2019-06-18 | 2022-02-15 | 长沙新材料产业研究院有限公司 | Diamond surface complex structure and preparation method thereof |
| CN110670126B (en) * | 2019-09-30 | 2021-03-23 | 长沙新材料产业研究院有限公司 | Diamond with cantilever structure and preparation method thereof |
| CN114016127A (en) * | 2021-12-27 | 2022-02-08 | 长沙新材料产业研究院有限公司 | Method for constructing diamond structure pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109666917B (en) | 2021-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109666917A (en) | A kind of diamond surface structure and preparation method thereof | |
| Innocenzi et al. | Patterning techniques for mesostructured films | |
| Lee et al. | Wafer‐scale Ni imprint stamps for porous alumina membranes based on interference lithography | |
| Xie et al. | Crystallographic orientation dependent reactive ion etching in single crystal diamond | |
| Verschuuren et al. | 3D photonic structures by sol-gel imprint lithography | |
| US20120107562A1 (en) | Methods for graphene-assisted fabrication of micro-and nanoscale structures and devices featuring the same | |
| JP4407770B2 (en) | Pattern formation method | |
| CN111505767A (en) | Preparation method of lithium niobate photonic chip based on silicon oxide mask | |
| Zhang et al. | Wafer‐Scale Highly Ordered Anodic Aluminum Oxide by Soft Nanoimprinting Lithography for Optoelectronics Light Management | |
| CN107052913B (en) | RB-SiC optical element polishing process processing methods | |
| Vlad et al. | Direct Transcription of Two‐Dimensional Colloidal Crystal Arrays into Three‐Dimensional Photonic Crystals | |
| Wang et al. | Nanotransfer printing of gold disk, ring and crescent arrays and their IR range optical properties | |
| CN103631089B (en) | A kind of preparation method of ultraviolet light curing nano impressing polymer template | |
| Asoh et al. | Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching | |
| CN106220237A (en) | A kind of preparation method of monolayer ordered silica nanosphere array | |
| CN110098120A (en) | A kind of method of large area transfer preparation nanostructure | |
| CN101386984A (en) | Double-frequency tunable magnetic resonance artificial compound material based on asymmetric metal grating structure | |
| CN103303860B (en) | Method for generating 0-50nm of random-height nano step on surface of Si | |
| CN108091552B (en) | Method for preparing micro-nano structure pattern on light-transmitting substrate | |
| CN108828705A (en) | A kind of efficient narrow-band filtering method of hanging structure sub-wavelength guide mode resonance Terahertz | |
| CN114749220A (en) | Nano-optofluidic chip with ultrahigh quality factor, preparation method and application | |
| CN104238264A (en) | Solution-assisted soft imprinting method | |
| Li et al. | Pattern transfer of hexagonal packed structure via ultrathin metal nanomesh masks for formation of Si nanopore arrays | |
| JP2009539135A (en) | Photonic crystal manufacturing method | |
| Amalathas et al. | Fabrication and replication of periodic nanopyramid structures by laser interference lithography and UV nanoimprint lithography for solar cells applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 7th Floor, Building B8, Lugu Enterprise Plaza, Yuelu District, Changsha City, Hunan Province, 410000 Patentee after: Aerospace Science and Industry (Changsha) New Materials Research Institute Co.,Ltd. Address before: 7 / F, building B8, luguyuyuan, 27 Wenxuan Road, high tech Development Zone, Changsha City, Hunan Province, 410205 Patentee before: CHANGSHA ADVANCED MATERIALS INDUSTRIAL RESEARCH INSTITUTE Co.,Ltd. |
|
| CP03 | Change of name, title or address |