CN109666334A - The preparation method of ink and the preparation method and application thereof and thin film transistor (TFT) - Google Patents
The preparation method of ink and the preparation method and application thereof and thin film transistor (TFT) Download PDFInfo
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- CN109666334A CN109666334A CN201710964633.8A CN201710964633A CN109666334A CN 109666334 A CN109666334 A CN 109666334A CN 201710964633 A CN201710964633 A CN 201710964633A CN 109666334 A CN109666334 A CN 109666334A
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- Prior art keywords
- solution
- ink
- preparation
- insulating layer
- active layer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 55
- 239000010409 thin film Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 claims abstract description 34
- LGCMKPRGGJRYGM-UHFFFAOYSA-N Osalmid Chemical compound C1=CC(O)=CC=C1NC(=O)C1=CC=CC=C1O LGCMKPRGGJRYGM-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000003381 stabilizer Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 12
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims abstract description 7
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001449 indium ion Inorganic materials 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 32
- 229910052681 coesite Inorganic materials 0.000 claims description 26
- 229910052906 cristobalite Inorganic materials 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 229910052682 stishovite Inorganic materials 0.000 claims description 26
- 229910052905 tridymite Inorganic materials 0.000 claims description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical group COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical group CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 3
- IDQBJILTOGBZCR-UHFFFAOYSA-N 1-butoxypropan-1-ol Chemical compound CCCCOC(O)CC IDQBJILTOGBZCR-UHFFFAOYSA-N 0.000 claims description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 2
- -1 alcohol ethers Chemical class 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- 229940031098 ethanolamine Drugs 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 17
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 4
- 206010001497 Agitation Diseases 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000013019 agitation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002042 Silver nanowire Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000006482 condensation reaction Methods 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910013504 M-O-M Inorganic materials 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/102—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions other than those only involving unsaturated carbon-to-carbon bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
- H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The present invention discloses a kind of preparation method of ink, include the following steps: provide the first solution, first solution include: molar concentration be the gallium ion of 0.01-0.1 mol/L, molar concentration is the indium ion of 0.1-0.5 mol/L, molar concentration is the zinc ion of 0.1-0.5 mol/L, the alcamines stabilizer that molar concentration is 0.1-0.5 mol/L；The second solution is provided, second solution includes the PHPS that mass fraction is 5%-10%；In inert gas environment, first solution and second solution are mixed under the conditions of 10-60 DEG C, the ink is prepared.Insulating layer solution and active layer solution are mixed to form mixed liquor by the present invention, then print the mixed liquor, and realization synchronizes the purpose for preparing insulating layer and active layer, to reduce device fabrication process, keeps technique more summary more controllable, and are conducive to reduce cost.
Description
Technical field
The present invention relates to thin-film transistor technologies fields more particularly to a kind of ink and the preparation method and application thereof and thin
The preparation method of film transistor.
Background technique
Display has become part indispensable in people's routine work and life, with the development of liquid crystal display
With going deep into for active matrix concept, thin film transistor (TFT) (TFT) technology has obtained extensive research.The TFT skill of comparative maturity at present
Art includes brilliant as the silica-base film of representative using amorphous silicon hydride (a-Si:H TFT) and polysilicon (p-Si TFT) thin film transistor (TFT)
Body pipe etc., has both been widely used, but the former lower field-effect mobility and the higher cost of the latter are difficult to greatly
Large-scale production makes its development by limitation, the application of the more unsuitable next generation's display technology OLED and QLED.Organic film
Transistor (OTFT) have preparation method it is more, can the advantages such as low temperature preparation, suppleness height, but device stability is poor, and organic
Object is unfavorable for it vulnerable to the external conditions such as water oxygen influence etc. and further applies.Due to existing oxide TFT(sull crystal
Pipe) the IGZO(indium gallium zinc oxide that such as is formed based on ZnO) TFT technology is because of itself and traditional amorphous silicon and multi-crystal TFT phase
Than having many advantages, such as high mobility and stability, uniformity is good, and its film can realize low temperature preparation, and substrate can choose soft
The plastics of property are in recent years by the novel TFT backplate skill that industry is paid close attention to and is greatly developed to prepare flexible display device
Art.
Currently, the method for preparing oxide TFT generallys use the vacuum production methods such as magnetron sputtering, to prepare oxide active
Layer, but there are the high requirements on the equipment for existing vacuum production method, preparation cost is high, and the oxide active layer of sputtering sedimentation
Quality is also difficult to control.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of ink and preparation method thereof with answer
With and thin film transistor (TFT) preparation method, it is intended to solving the preparation method of existing TFT, there are the high requirements on the equipment, preparation costs
Height, and the problem that the active layer quality deposited is also difficult to control.
Technical scheme is as follows:
A kind of preparation method of ink, including
First solution is provided, first solution include: molar concentration be the gallium ion of 0.01-0.1 mol/L, molar concentration is
The indium ion of 0.1-0.5 mol/L, molar concentration are the zinc ion of 0.1-0.5 mol/L, molar concentration is 0.1-0.5 mol/L
Alcamines stabilizer and the first solvent；
The second solution is provided, second solution includes the PHPS and the second solvent that mass fraction is 5%-10%；
In inert gas environment, first solution and second solution are mixed at 10-60 DEG C, are prepared described
Ink.
The preparation method, wherein the ink includes the first solvent and the second solvent, wherein described first is molten
Liquid further includes the first solvent, and second solution further includes the second solvent, wherein first solvent is alcohol ethers solvent, institute
The second solvent is stated as not hydroxyl and not amino-containing solvent.
The preparation method, wherein first solvent is ethylene glycol monomethyl ether, ethylene glycol ethyl ether, butyl glycol ether, two
One of ethylene glycol monomethyl ether, triethylene glycol butyl ether, propandiol butyl ether, propylene glycol monomethyl ether and dipropylene glycol methyl ether are a variety of.
The preparation method, wherein second solvent is n-butyl ether, toluene, tetrahydrofuran, methylene chloride, diformazan
One of benzene, ether, n-hexane, pentane, methyl ethyl ketone, ethyl acetate and butyl acetate are a variety of.
The preparation method, wherein the alcamines stabilizer is in monoethanolamine, diethanol amine and diglycolamine
It is one or more.
A kind of ink, is prepared by the method for the invention.
A kind of application of ink, wherein ink as above of the invention is used to prepare the insulating layer of thin film transistor (TFT) and is had
Active layer.
A kind of preparation method of thin film transistor (TFT), wherein include the following steps:
Ink as described above is provided；
Substrate is provided, the substrate surface is provided with grid；
The ink is deposited on the grid；
After carrying out preannealing 0.5-3 h at 70-200 DEG C, annealing 1-5 h is carried out under the conditions of 200-400 DEG C, is prepared
The insulating layer and active layer of the thin film transistor (TFT), the insulating layer are formed in the gate surface, the material of the insulating layer
Including SiO2；The active layer is formed in the surface of insulating layer, and the material of the active layer includes IGZO；
Alternatively, making PHPS be converted into SiO in rich water oxygen-enriched environment after carrying out preannealing 0.5-3 h at 70-200 DEG C2, system
Standby to obtain the insulating layer and active layer of the thin film transistor (TFT), the insulating layer is formed in the gate surface, the insulating layer
Material include SiO2；The active layer is formed in the surface of insulating layer, and the active layer material includes IGZO.
The preparation method, wherein the step of annealing 1-5 h is carried out under the conditions of 200-400 DEG C is rich in rich water
PHPS is set to be converted into SiO in oxygen environment2The step of in, further include the steps that in the process carry out UVO processing.
The utility model has the advantages that insulating layer solution and active layer solution are mixed to form mixed liquor (the i.e. described ink) by the present invention, so
After print the mixed liquor, realization synchronizes the purpose for preparing insulating layer and active layer, to reduce device fabrication process, makes work
Skill more summary is more controllable, and is conducive to reduce cost.
Specific embodiment
The present invention provides the preparation method of a kind of ink and the preparation method and application thereof and thin film transistor (TFT), to make this hair
Bright purpose, technical solution and effect are clearer, clear, and the present invention is described in more detail below.It should be appreciated that herein
Described specific embodiment is only used to explain the present invention, is not intended to limit the present invention.
As a preferred embodiment therein, the ink is prepared via a method which to obtain:
First solution is provided, first solution include: molar concentration be the gallium ion of 0.01-0.1 mol/L, molar concentration is
The indium ion of 0.1-0.5 mol/L, the zinc ion that molar concentration is 0.1-0.5 mol/L, molar concentration are 0.1-0.5 mol/L
Alcamines stabilizer and the first solvent；
The second solution is provided, second solution includes the PHPS and the second solvent that mass fraction is 5%-10%；
In inert gas environment, first solution and second solution are mixed at 10-60 DEG C, are prepared described
Ink.
In the present invention, first solution includes gallium ion, indium ion, zinc ion, alcamines stabilizer and the first solvent,
Presoma component of the component that first solution includes as active layer, first solution are colorless and transparent.
In the present invention, second solution includes PHPS and the second solvent, and the component that second solution includes is as exhausted
The presoma component of edge layer.The mass concentration of PHPS carries out true with specific reference to the thickness of required insulating layer in second solution
It is fixed, for example, it is preferable to, the second solution that the mass fraction of PHPS is 5-10% is used to prepare the insulating layer for needing thickness.
Wherein, the gallium ion is provided by the salt containing gallium, and the indium ion is provided by the salt containing indium, and the zinc ion is by containing
The salt of zinc provides.As an example, the salt containing gallium may include one of gallium chloride, gallium nitrate, acetic acid gallium etc. or a variety of；
The salt containing indium may include one of inidum chloride, indium nitrate, indium acetate etc. or a variety of；The salt containing zinc may include
One of zinc chloride, zinc nitrate, zinc acetate etc. are a variety of.As an example, first solvent includes ethylene glycol monomethyl ether, second two
Alcohol ether, butyl glycol ether, diethylene glycol dimethyl ether, triethylene glycol butyl ether, propandiol butyl ether, propylene glycol monomethyl ether and dipropylene glycol first
One of ether is a variety of.
In the present invention, second solvent can be polar solvent or nonpolar solvent, because in water, pure and mild amine solvent
Hydroxyl and amino can and PHPS reaction, second solvent cannot be the solvent of the hydroxyls and amino such as water, alcohols and amine.
As an example, second solvent includes n-butyl ether, toluene, tetrahydrofuran, methylene chloride, dimethylbenzene, ether, n-hexane, just
One of pentane, methyl ethyl ketone, ethyl acetate and butyl acetate are a variety of.
The purpose that stabilizer is added in the present invention is that active layer presoma component in the ink forms IGZO active layer process
In, alcamines stabilizer can keep the stability of the first solution.This is because active layer presoma group branch first hydrolyzes to form
Corresponding hydroxide, further annealed dehydration are condensed to be formed in IGZO thin-film process, and alcamines stabilizer can maintain body
The pH value of system prevents corresponding active component hydroxide from decomposing.Preferably, the alcamines stabilizer includes monoethanolamine, two
One of ethanol amine and diglycolamine are a variety of.
The present invention is in inert gas environment, by first solution and second solution in 10-60 DEG C of (preferably 15-
25 DEG C) mixing, the ink is prepared.The purpose of selection low-temperature mixed is that reduction alcamines stabilizer as far as possible is to PHPS
Influence.It is 2:1 ~ 10:1 by the ratio between the total soluble matters of first solution and solute of second solution, it is molten by described first
Liquid and the second solution are mixed to form mixed liquor.
In the present invention, first solution by gallium ion, indium ion, zinc ion, that alcamines stabilizer is mixed in first is molten
It prepares and obtains in agent, the component that first solution includes is used to prepare active layer as the presoma component of active layer.
In the present invention, second solution, which is dissolved in preparing in the second solvent by PHPS, to be obtained, and second solution includes
Component is used to prepare insulating layer as the presoma component of insulating layer.It is described as one of preferred embodiment
The process for preparation of second solution is as follows: under dry nitrogen or atmosphere of inert gases protection, by a certain amount of PHPS and second
Solvent mixing, and PHPS is dissolved sufficiently by modes such as magnetic agitations, obtain second solution.
The present invention has a detailed description the specific embodiment of the first solution and the second solution in above-mentioned ink, herein no longer
It repeats.
The present invention also provides a kind of applications of ink, wherein ink as described above is used to prepare thin film transistor (TFT)
Insulating layer and active layer.Insulating layer solution (i.e. the second solution) and active layer solution (i.e. the first solution) are mixed to form by the present invention
Then the ink prints the ink, realization synchronizes the purpose for preparing insulating layer and active layer, to reduce device preparation
Process keeps technique more summary more controllable, and is conducive to reduce cost.
The present invention also provides a kind of specific embodiments of the preparation method of thin film transistor (TFT), wherein includes the following steps:
100, ink as described above is provided；
200, substrate is provided, the substrate surface is provided with grid；
300, the ink is deposited on the grid；
400, after carrying out preannealing 0.5-3 h at 70-200 DEG C, annealing 1-5 h, preparation are carried out under the conditions of 200-400 DEG C
The insulating layer and active layer of the thin film transistor (TFT) are obtained, the insulating layer is formed in the gate surface, the insulating layer
Material includes SiO2；The active layer is formed in the surface of insulating layer, and the material of the active layer includes IGZO；
Alternatively, making PHPS be converted into SiO in rich water oxygen-enriched environment after carrying out preannealing 0.5-3 h at 70-200 DEG C2, system
Standby to obtain the insulating layer and active layer of the thin film transistor (TFT), the insulating layer is formed in the gate surface, the insulating layer
Material include SiO2；The active layer is formed in the surface of insulating layer, and the active layer material includes IGZO.
In step 200, as a wherein specific embodiment, the present invention can use the substrate conduct of doping grid material
The substrate, the grid material adulterated in substrate is as grid, as a preferred embodiment, using highly dope p-type Si as substrate,
In substrate then highly dope p-type Si prepares IGZO/SiO by solwution method on the substrate of highly dope p-type Si as grid2Layer.
As a wherein specific embodiment, the present invention can also prepare grid by vapor deposition mode on substrate, described
The material of grid can be one of Al, Ag and their alloy etc., with a thickness of 50-200 nm, preferably 100 nm.
As a wherein specific embodiment, the present invention can also be existed by solwution methods such as spin-coating method or inkjet printing methods
Grid is prepared on substrate, this method is suitable for flexible base board.As a preferred embodiment, existed by spin-coating method or inkjet printing methods
Silver nanowires (AgNWs) electrode is prepared on substrate as grid.As an example, silver nanowires is prepared on substrate by spin-coating method
Electrode is as follows as the preparation process of grid: silver nanowires-alcohol suspending liquid that concentration is 3 mg/mL is chosen, in 3000 rpm
60 s of spin coating, 2 h of spin coating after annealing obtain the silver nanowires electrode on substrate under speed conditions.
In step 300, as a wherein specific embodiment, ink is deposited on grid by the present invention by solwution method,
The wherein preferred inkjet printing methods of the solwution method.The technological parameter of present invention control inkjet printing are as follows: spray head and grid spacing
For 1-10 mm, preferably 3-7 mm；Spray head voltage is 5-20 V, preferably 5-10 V.
In step 400, as a wherein specific embodiment, preannealing is carried out at 70-200 DEG C after deposition
After 0.5-3 h, annealing 1-5 h is then carried out under the conditions of 200-400 DEG C, Si-H the and Si-N key in PHPS is promoted to carry out water
It solves condensation reaction and forms SiO2Film layer, and then obtain IGZO/SiO2Film layer structure.Preferably, it is moved back in advance at 130-180 DEG C
After fiery 1-2 h, annealing 2.5-3.5 h is carried out under the conditions of 250-350 DEG C, forms IGZO/ SiO2Film layer structure.It is described
IGZO/ SiO2Film layer structure in, SiO2Layer is in the gate surface, and as the insulating layer of TFT, IGZO layers then positioned at described
SiO2Layer surface, the active layer as TFT.
Ink of the present invention is deposited on grid, forms IGZO/ SiO2The mechanism of film layer structure is: in the second solution
Two solvents have weaker solubility and smaller density to the first solvent in the first solution, therefore after ink printed, second is molten
Agent causes ink to be layered and is located above ink, conducive to volatilizing and reducing the influence to subsequent reactions.With waving for the second solvent
Hair, more PHPS are dissolved in the first solvent, since PHPS includes more active Si-H and Si-N key, are easy and the first solvent
In hydroxyl and stabilizer in amino occur hydrolysis-condensation reaction formed SiO2, and ink bottom is formed in coprecipitation mode, and
It forms a film with annealing process.Simultaneously in annealing process, due to the subsequent volatilization of the second solvent, film forming, and position is precipitated in remaining IGZO
In SiO2Top forms IGZO/SiO2Active layer-insulating layer film layer structure.
The present invention is annealed into for the first time promotes the evaporation of the second solvent composition, promotes the two layering, and promote in the first solution
Each component reaction generates hydroxide.Second annealing to form M-O-M key to be condensed hydroxide, promote active layer at
Film；And the hydrolysis-condensation reaction of PHPS forms SiO2Film.
In step 400, as wherein another specific embodiment, preannealing is carried out at 70-200 DEG C after deposition
After 0.5-3 h, PHPS is set to be converted into SiO in rich water oxygen-enriched environment2, the insulating layer of the thin film transistor (TFT) is prepared and has
Active layer, the insulating layer are formed in the gate surface, and the material of the insulating layer includes SiO2；The active layer is formed in institute
Surface of insulating layer is stated, the active layer material includes IGZO.
As a wherein preferred embodiment, carried out under the conditions of 200-400 DEG C annealing 1-5 h the step of or
Person makes PHPS be converted into SiO in rich water oxygen-enriched environment2The step of in, further include the steps that in the process carry out UVO processing.
After step 400, as a wherein specific embodiment, by adding on IGZO layers described (IGZO active layer)
Mask plate vapor deposition mode prepares source electrode and drain electrode of the electrode as TFT, and Al, Ag or their alloy etc. may be selected in electrode material,
With a thickness of 50-200 nm, preferably 80-120 nm.By changing mask plate parameter regulation channel length, channel length is 10-
500 μm, preferably 100-200 μm.
Insulating layer solution and active layer solution are mixed to form the ink by the present invention, then print the ink, are realized
The purpose for preparing insulating layer and active layer is synchronized, to reduce device fabrication process, keeps technique more summary more controllable, and benefit
In reducing cost.
The present invention provides a kind of specific embodiment of thin film transistor (TFT), wherein including substrate, is on the substrate arranged
Grid, the SiO that is prepared on the grid2Layer and IGZO layers, the SiO2Layer is formed in the gate surface, the IGZO
Layer is formed in the SiO2Layer surface, the source electrode and drain electrode prepared on the IGZO layer.The present invention is in the above preparation method
The thin film transistor (TFT) is described in detail, details are not described herein.
Below by embodiment, the present invention is described in detail.
Embodiment 1
A kind of TFT preparation method is present embodiments provided, the TFT preparation method includes the following steps:
1, using highly dope p-type Si substrate as substrate.
2, the step of preparing insulating layer and active layer is as follows:
1), the preparation of the first solution: gallium chloride (0.1 M), inidum chloride (0.1 M), zinc acetate dihydrate (0.1 M), ethylene glycol list
Formic acid and monoethanolamine (0.2 M) are mixed in glycol monoethyl ether, form first solution；
2), the preparation of the second solution: under dry nitrogen atmosphere protection, PHPS is mixed with ether, and pass through magnetic agitation
Mode dissolve PHPS sufficiently, obtain second solution, in second solution mass concentration of PHPS be 5%；
3), at 20 DEG C, the first solution that above-mentioned preparation is obtained is mixed with the second solution, obtains ink；
4), the ink is deposited on substrate by printing type；
5) 1 h of preannealing is carried out at being 70 DEG C in Pre-annealing Temperature after, printing, is then moved back under the conditions of 200 DEG C
2 h of fire form IGZO/ SiO by heat treatment2Film layer structure, wherein SiO2Layer is formed in substrate surface, as insulation
Layer, IGZO layers are then formed in SiO2Layer surface, as active layer.
3, by adding the vapor deposition mode of mask plate to prepare Al electrode as source electrode and drain electrode, with a thickness of 100 on IGZO layer
Nm, and controlling channel length is 150 μm.
Embodiment 2
A kind of TFT preparation method is present embodiments provided, the TFT preparation method includes the following steps:
1, using highly dope p-type Si substrate as substrate.
2, the step of preparing TFT insulating layer and active layer is as follows:
1), the preparation of the first solution: gallium chloride (0.1 M), inidum chloride (0.1 M), zinc acetate dihydrate (0.1 M), ethylene glycol list
Formic acid and monoethanolamine (0.2 M) are mixed in glycol monoethyl ether, form first solution；
2), the preparation of the second solution: under dry nitrogen atmosphere protection, PHPS is mixed with ether, and pass through magnetic agitation
Mode dissolve PHPS sufficiently, obtain second solution, in second solution mass concentration of PHPS be 5%；
3), at 20 DEG C, the first solution that above-mentioned preparation is obtained is mixed with the second solution, obtains ink；
4), the ink is deposited on substrate by printing type；
5) 1 h of preannealing is carried out at being 180 DEG C in Pre-annealing Temperature after, printing, is then moved back under the conditions of 500 DEG C
3 h of fire form IGZO/ SiO by heat treatment2Film layer structure, wherein SiO2Layer is formed in substrate surface, as insulation
Layer, IGZO layers are then formed in SiO2Layer surface, as active layer.
3, by adding the vapor deposition mode of mask plate to prepare Al electrode as source electrode and drain electrode, with a thickness of 100 on IGZO layer
Nm, and controlling channel length is 150 μm.
Embodiment 3
A kind of TFT preparation method is present embodiments provided, the TFT preparation method includes the following steps:
1, using highly dope p-type Si substrate as substrate.
2, the step of preparing insulating layer and active layer is as follows:
1), the preparation of the first solution: gallium chloride (0.1 M), inidum chloride (0.1 M), zinc acetate dihydrate (0.1 M), ethylene glycol list
Formic acid and monoethanolamine (0.2 M) are mixed in glycol monoethyl ether, form first solution；
2), the preparation of the second solution: under dry nitrogen atmosphere protection, PHPS is mixed with ether, and pass through magnetic agitation
Mode dissolve PHPS sufficiently, obtain second solution, in second solution mass concentration of PHPS be 5%；
3), at 20 DEG C, the first solution that above-mentioned preparation is obtained is mixed with the second solution, obtains ink；
4), the ink is deposited on substrate by printing type；
5) 1 h of preannealing is carried out at being 180 DEG C in Pre-annealing Temperature after, printing, is then moved back under the conditions of 500 DEG C
3 h of fire form IGZO/ SiO by heat treatment2Film layer structure, wherein SiO2It is formed in substrate surface, as insulating layer,
IGZO layers are then formed in SiO2Layer surface, as active layer.
3, by adding the vapor deposition mode of mask plate to prepare Al electrode as source electrode and drain electrode, with a thickness of 100 on IGZO layer
Nm, and controlling channel length is 150 μm.
In conclusion the preparation side of a kind of ink provided by the invention and the preparation method and application thereof and thin film transistor (TFT)
Insulating layer solution and active layer solution are mixed to form mixed liquor by method, the present invention, then print the mixed liquor, realize synchronous system
The purpose of standby insulating layer and active layer keeps technique more summary more controllable to reduce device fabrication process, and is conducive to reduce
Cost.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of preparation method of ink, which comprises the steps of:
First solution is provided, first solution include: molar concentration be the gallium ion of 0.01-0.1 mol/L, molar concentration is
The indium ion of 0.1-0.5 mol/L, molar concentration are the zinc ion of 0.1-0.5 mol/L, molar concentration is 0.1-0.5 mol/L
Alcamines stabilizer；
The second solution is provided, second solution includes the PHPS that mass fraction is 5%-10%；
In inert gas environment, first solution and second solution are mixed under the conditions of 10-60 DEG C, are prepared into
To the ink.
2. preparation method according to claim 1, which is characterized in that first solution further includes the first solvent, described
Second solution further includes the second solvent, wherein first solvent be alcohol ethers solvent, second solvent be not hydroxyl and
Not amino-containing solvent.
3. preparation method according to claim 2, which is characterized in that first solvent is ethylene glycol monomethyl ether, ethylene glycol
Ether, butyl glycol ether, diethylene glycol dimethyl ether, triethylene glycol butyl ether, propandiol butyl ether, propylene glycol monomethyl ether and dipropylene glycol methyl ether
One of or it is a variety of.
4. preparation method according to claim 2, which is characterized in that second solvent is n-butyl ether, toluene, tetrahydro furan
Mutter, one of methylene chloride, dimethylbenzene, ether, n-hexane, pentane, methyl ethyl ketone, ethyl acetate and butyl acetate or
It is a variety of.
5. preparation method according to claim 1 or 2, which is characterized in that the alcamines stabilizer is monoethanolamine, two
One of ethanol amine and diglycolamine are a variety of.
6. preparation method according to claim 1 or 2, which is characterized in that
In inert gas environment, by first solution and second solution under the conditions of 10-60 DEG C, by described first
The ratio between solute of the total soluble matters of solution and second solution is 2:1 ~ 10:1, and first solution is mixed shape with the second solution
At mixed liquor, the ink is prepared.
7. a kind of ink, which is characterized in that the ink is prepared by any one of claim 1-6 the method.
8. a kind of application of ink, which is characterized in that ink described in claim 7 is used to prepare to the active layer of thin film transistor (TFT)
And insulating layer.
9. a kind of preparation method of thin film transistor (TFT), which comprises the steps of:
Any one of the claim 1-6 ink that the method is prepared is provided；
Substrate is provided, the substrate surface is provided with grid；
The ink is deposited on the grid；
After carrying out preannealing 0.5-3 h at 70-200 DEG C, annealing 1-5 h is carried out under the conditions of 200-400 DEG C, is prepared
The insulating layer and active layer of the thin film transistor (TFT), the insulating layer are formed in the gate surface, the material of the insulating layer
Including SiO2；The active layer is formed in the surface of insulating layer, and the material of the active layer includes IGZO；
Alternatively, making PHPS be converted into SiO in rich water oxygen-enriched environment after carrying out preannealing 0.5-3 h at 70-200 DEG C2, system
Standby to obtain the insulating layer and active layer of the thin film transistor (TFT), the insulating layer is formed in the gate surface, the insulating layer
Material include SiO2；The active layer is formed in the surface of insulating layer, and the active layer material includes IGZO.
10. preparation method according to claim 9, which is characterized in that carry out annealing 1-5 h under the conditions of 200-400 DEG C
The step of or so that PHPS is converted into SiO in rich water oxygen-enriched environment2The step of in, in the process further include carry out UVO processing
Step.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012521080A (en) * | 2009-03-19 | 2012-09-10 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | Solar cell with an encapsulation layer based on polysilazane |
| CN102768945A (en) * | 2012-07-12 | 2012-11-07 | 复旦大学 | Method for producing indium gallium zinc oxide semiconductor thin film by using sol-gel method |
| CN105023833A (en) * | 2014-04-30 | 2015-11-04 | 加利福尼亚大学董事会 | Doping of a substrate via a dopant containing polymer film |
| WO2017042585A1 (en) * | 2015-09-09 | 2017-03-16 | Pilkington Group Limited | Deposition process |
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- 2017-10-17 CN CN201710964633.8A patent/CN109666334A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012521080A (en) * | 2009-03-19 | 2012-09-10 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | Solar cell with an encapsulation layer based on polysilazane |
| CN102414827B (en) * | 2009-03-19 | 2014-10-29 | Az电子材料卢森堡有限公司 | Solar cells with an encapsulating layer based on polysilazane |
| CN102768945A (en) * | 2012-07-12 | 2012-11-07 | 复旦大学 | Method for producing indium gallium zinc oxide semiconductor thin film by using sol-gel method |
| CN105023833A (en) * | 2014-04-30 | 2015-11-04 | 加利福尼亚大学董事会 | Doping of a substrate via a dopant containing polymer film |
| WO2017042585A1 (en) * | 2015-09-09 | 2017-03-16 | Pilkington Group Limited | Deposition process |
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Application publication date: 20190423 |