CN109661124A - A kind of IC support plate novel surface processing method - Google Patents

A kind of IC support plate novel surface processing method Download PDF

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Publication number
CN109661124A
CN109661124A CN201910035638.1A CN201910035638A CN109661124A CN 109661124 A CN109661124 A CN 109661124A CN 201910035638 A CN201910035638 A CN 201910035638A CN 109661124 A CN109661124 A CN 109661124A
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China
Prior art keywords
layer
support plate
gold
inch
processing method
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CN201910035638.1A
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Chinese (zh)
Inventor
苏化友
郑晓蓉
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Guangdong Kexiang Electronic Technology Co Ltd
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Guangdong Kexiang Electronic Technology Co Ltd
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Priority to CN201910035638.1A priority Critical patent/CN109661124A/en
Publication of CN109661124A publication Critical patent/CN109661124A/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/403Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/117Pads along the edge of rigid circuit boards, e.g. for pluggable connectors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

The present invention provides a kind of IC support plate novel surface processing method, which is characterized in that comprising the following specific steps S1. pre-processes substrate, including sawing sheet, drilling;S2. heavy copper, plate electricity;S3. dry film, acid etching;S4.AOI, anti-welding processing;S5. golden finger face electroplating bright nickel layer/hard gold layer;S6. joint face successively electroless nickel layer, silver layer, layer gold;S7. post-processing, including molding, test, FQC, FQA, packaging.Of the invention substitutes existing joint face face electroplating matt nickel (Ni)/gold (Au) technique using electroless nickel layer (Ni)/silver layer (Ag)/layer gold (Au) technique, to effectively improve, connection (bonding) position line fly line is bad, improves the quality of IC support plate.

Description

A kind of IC support plate novel surface processing method
Technical field
The invention belongs to wiring board processing technique fields, and in particular to a kind of IC support plate novel surface processing method.
Background technique
IC package substrate or IC support plate primarily as IC carrier, and provide the interconnection of the signal between chip and PCB, Heat dissipation channel, chip protection.It is the critical component in encapsulation, accounts for the 35-55% of packaging technology cost.IC substrate process it is basic Material includes copper foil, resin substrate, dry film (solid-state photoresist), wet film (liquid photoresist) and metal material (copper, nickel, gold Salt) etc., technique is similar to PCB, but its wiring density line width line-spacing, interlayer alignment precision and material by property than PCB high.
IC support plate is stacked by the material of different-thickness, there is conductive material and non-conducting material;Via hole, for connecting The hole of different layer signals.Structure includes ViaHole (drilling), ViaLand (orifice ring), HoleWall (hole wall), HoleCap (brill Hole sealing cap), PluggingInk (rabbet ink) etc.;It is surface-treated (SurfaceTreatment), EG (electroplating gold), Nithickness (nickel layer thickness), Authickness (layer gold thickness) etc..
The common process of surface treatment of IC support plate is heavy nickel (Ni)/golden (Au) technique, and nickel thickness requires > 150 μ inch, and gold is thick It is required that > 12 μ inch;This surface treatment higher cost is easy to appear that fly line is bad to do over again when playing side deposit line.
Summary of the invention
In order to improve the problem present on, the present invention provides a kind of IC support plate process of surface treatment, use of the invention Electroless nickel layer (Ni)/silver layer (Ag)/layer gold (Au) technique substitutes existing joint face face electroplating matt nickel (Ni)/gold (Au) work Skill, to effectively improve, connection (bonding) position line fly line is bad, improves the quality of IC support plate.
The technical solution of the present invention is as follows: a kind of IC support plate novel surface processing method, which is characterized in that including in detail below Step:
S1. substrate is pre-processed, including sawing sheet, drilling;
S2. heavy copper, plate electricity;
S3. dry film, acid etching;
S4.AOI, anti-welding processing;
S5. golden finger face electroplating bright nickel layer/hard gold layer;
S6. joint face successively electroless nickel layer, silver layer, layer gold;
S7. post-processing, including molding, test, FQC, FQA, packaging.
Further, in the step S5, the bright nickel layer with a thickness of 120-250 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 1-10 μ inch.
Further, in the step S6, the nickel layer with a thickness of 120-250 μ inch.
Further, in the step S6, the silver thickness is 25-60 μ inch.
Further, in the step S6, the layer gold with a thickness of 0.1-10 μ inch.
Further, the electro-plating method used in step S5, S6 for include: assist side surface covering it is conductive Layer;Electroless coating region overlay anti-plate protective layer on the surface of the conductive layer;And it is not being covered by anti-plate protective layer Plating area be electroplated, obtain the electroplated metal layer that is surface-treated for the first time;Carry out non-first time surface treatment, wherein On the surface that upper primary surface treatment is formed, in the electroless coating region overlay anti-plate protection of non-first time surface treatment Layer;And be not electroplated by the plating area that anti-plate protective layer covers, obtain the electricity of the non-first time surface treatment Metal cladding;Anti-plate protective layer is taken off, and etches away the conductive layer for not being plated metal layer covering.
The present invention realizes only assist side by covering the region for not needing to carry out electroplating processes on wiring board Specified plating area in be electroplated, which removes the production of electroplate lead wire from, has saved the line occupied needed for electroplate lead wire Road plate space, improves the wiring density of surface-treated layer.Simultaneously as can accurately realize electroplating processes in specified region, The usage amount for reducing precious metal has saved the cost of manufacture of PCB surface electroplating processes.
The present invention also provides a kind of IC support plate novel surface processing methods, comprising the following steps: sawing sheet → drilling → heavy copper Blue glue/windowing → golden finger face electroplating bright nickel layer/the hard gold layer of → plate electricity → dry film → acid etching → AOI → anti-welding → patch → Tear blue glue → patch indigo plant glue → joint face successively electroless nickel layer, silver layer, layer gold → tear blue glue → molding → test → FQC → FQA → Packaging.
The present invention substitutes existing electroplating matt nickel layer using electroless nickel layer (Ni)/silver layer (Ag)/layer gold (Au) technique (Ni)/hard gold layer (Au) technique, the μ of Jin Houcong > 12 inch drop to 0.1-10 μ inch, effectively reduce cost, the company of being effectively improved Position patch fly line problem is connect, the quality of IC support plate is improved.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with embodiment, it is clear that described reality Applying example is only a part of the embodiment of the present invention, instead of all the embodiments.
Embodiment 1
A kind of IC support plate novel surface processing method, which is characterized in that comprising the following specific steps
S1. substrate is pre-processed, including sawing sheet, drilling;
S2. heavy copper, plate electricity;
S3. dry film, acid etching;
S4.AOI, anti-welding processing;
S5. golden finger face electroplating bright nickel layer/hard gold layer;
S6. joint face successively electroless nickel layer, silver layer, layer gold;
S7. post-processing, including molding, test, FQC, FQA, packaging.
Further, in the step S5, the bright nickel layer with a thickness of 165 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 5 μ inch.
Further, in the step S6, the nickel layer with a thickness of 165 μ inch.
Further, in the step S6, the silver thickness is 40 μ inch.
Further, in the step S6, the layer gold with a thickness of 2 μ inch.
Further, the electro-plating method used in step S5, S6 for include: assist side surface covering it is conductive Layer;Electroless coating region overlay anti-plate protective layer on the surface of the conductive layer;And it is not being covered by anti-plate protective layer Plating area be electroplated, obtain the electroplated metal layer that is surface-treated for the first time;Carry out non-first time surface treatment, wherein On the surface that upper primary surface treatment is formed, in the electroless coating region overlay anti-plate protection of non-first time surface treatment Layer;And be not electroplated by the plating area that anti-plate protective layer covers, obtain the electricity of the non-first time surface treatment Metal cladding;Anti-plate protective layer is taken off, and etches away the conductive layer for not being plated metal layer covering.
The present invention realizes only assist side by covering the region for not needing to carry out electroplating processes on wiring board Specified plating area in be electroplated, which removes the production of electroplate lead wire from, has saved the line occupied needed for electroplate lead wire Road plate space, improves the wiring density of surface-treated layer.Simultaneously as can accurately realize electroplating processes in specified region, The usage amount for reducing precious metal has saved the cost of manufacture of PCB surface electroplating processes.
The present invention substitutes existing electroplating matt nickel layer using electroless nickel layer (Ni)/silver layer (Ag)/layer gold (Au) technique (Ni)/hard gold layer (Au) technique, the μ of Jin Houcong > 12 inch drop to 0.1-10 μ inch, effectively reduce cost, the company of being effectively improved Position patch fly line problem is connect, the quality of IC support plate is improved.
Embodiment 2
A kind of IC support plate novel surface processing method, which is characterized in that comprising the following specific steps
S1. substrate is pre-processed, including sawing sheet, drilling;
S2. heavy copper, plate electricity;
S3. dry film, acid etching;
S4.AOI, anti-welding processing;
S5. golden finger face electroplating bright nickel layer/hard gold layer;
S6. joint face successively electroless nickel layer, silver layer, layer gold;
S7. post-processing, including molding, test, FQC, FQA, packaging.
Further, in the step S5, the bright nickel layer with a thickness of 120 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 1 μ inch.
Further, in the step S6, the nickel layer with a thickness of 120 μ inch.
Further, in the step S6, the silver thickness is 25 μ inch.
Further, in the step S6, the layer gold with a thickness of 0.1 μ inch.
Further, the electro-plating method used in step S5, S6 for include: assist side surface covering it is conductive Layer;Electroless coating region overlay anti-plate protective layer on the surface of the conductive layer;And it is not being covered by anti-plate protective layer Plating area be electroplated, obtain the electroplated metal layer that is surface-treated for the first time;Carry out non-first time surface treatment, wherein On the surface that upper primary surface treatment is formed, in the electroless coating region overlay anti-plate protection of non-first time surface treatment Layer;And be not electroplated by the plating area that anti-plate protective layer covers, obtain the electricity of the non-first time surface treatment Metal cladding;Anti-plate protective layer is taken off, and etches away the conductive layer for not being plated metal layer covering.
Embodiment 3
A kind of IC support plate novel surface processing method, which is characterized in that comprising the following specific steps
S1. substrate is pre-processed, including sawing sheet, drilling;
S2. heavy copper, plate electricity;
S3. dry film, acid etching;
S4.AOI, anti-welding processing;
S5. golden finger face electroplating bright nickel layer/hard gold layer;
S6. joint face successively electroless nickel layer, silver layer, layer gold;
S7. post-processing, including molding, test, FQC, FQA, packaging.
Further, in the step S5, the bright nickel layer with a thickness of 250 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 10 μ inch.
Further, in the step S6, the nickel layer with a thickness of 250 μ inch.
Further, in the step S6, the silver thickness is 60 μ inch.
Further, in the step S6, the layer gold with a thickness of 10 μ inch.
Further, the electro-plating method used in step S5, S6 for include: assist side surface covering it is conductive Layer;Electroless coating region overlay anti-plate protective layer on the surface of the conductive layer;And it is not being covered by anti-plate protective layer Plating area be electroplated, obtain the electroplated metal layer that is surface-treated for the first time;Carry out non-first time surface treatment, wherein On the surface that upper primary surface treatment is formed, in the electroless coating region overlay anti-plate protection of non-first time surface treatment Layer;And be not electroplated by the plating area that anti-plate protective layer covers, obtain the electricity of the non-first time surface treatment Metal cladding;Anti-plate protective layer is taken off, and etches away the conductive layer for not being plated metal layer covering.
Embodiment 4
A kind of IC support plate novel surface processing method, which comprises the following steps: sawing sheet → drilling → heavy copper → plate electricity Tear blue glue in blue glue/windowing → golden finger face electroplating bright nickel layer/hard gold layer → of → dry film → acid etching → AOI → anti-welding → patch → pasting blue glue, → joint face successively electroless nickel layer, silver layer, layer gold → tears blue glue → molding → test → FQC → FQA → packaging.
Further, in the step S5, the bright nickel layer with a thickness of 140 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 2 μ inch.
Further, in the step S6, the nickel layer with a thickness of 140 μ inch.
Further, in the step S6, the silver thickness is 30 μ inch.
Further, in the step S6, the layer gold with a thickness of 0.5 μ inch.
Embodiment 5
A kind of IC support plate novel surface processing method, which comprises the following steps: sawing sheet → drilling → heavy copper → plate electricity Tear blue glue in blue glue/windowing → golden finger face electroplating bright nickel layer/hard gold layer → of → dry film → acid etching → AOI → anti-welding → patch → pasting blue glue, → joint face successively electroless nickel layer, silver layer, layer gold → tears blue glue → molding → test → FQC → FQA → packaging.
Further, in the step S5, the bright nickel layer with a thickness of 180 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 6 μ inch.
Further, in the step S6, the nickel layer with a thickness of 180 μ inch.
Further, in the step S6, the silver thickness is 45 μ inch.
Further, in the step S6, the layer gold with a thickness of 3 μ inch.
Embodiment 6
A kind of IC support plate novel surface processing method, which comprises the following steps: sawing sheet → drilling → heavy copper → plate electricity Tear blue glue in blue glue/windowing → golden finger face electroplating bright nickel layer/hard gold layer → of → dry film → acid etching → AOI → anti-welding → patch → pasting blue glue, → joint face successively electroless nickel layer, silver layer, layer gold → tears blue glue → molding → test → FQC → FQA → packaging.
Further, in the step S5, the bright nickel layer with a thickness of 220 μ inch.
Further, in the step S5, the hard gold layer with a thickness of 8 μ inch.
Further, in the step S6, the nickel layer with a thickness of 220 μ inch.
Further, in the step S6, the silver thickness is 50 μ inch.
Further, in the step S6, the layer gold with a thickness of 8 μ inch.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims Variation is included within the present invention.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art The other embodiments being understood that.It is noted that the technical characteristic being not described in detail in the present invention, can pass through this Field any prior art is realized.

Claims (7)

1. a kind of IC support plate novel surface processing method, which is characterized in that comprising the following specific steps
S1. substrate is pre-processed, including sawing sheet, drilling;
S2. heavy copper, plate electricity;
S3. dry film, acid etching;
S4.AOI, anti-welding processing;
S5. golden finger face electroplating bright nickel layer/hard gold layer;
S6. joint face successively electroless nickel layer, silver layer, layer gold;
S7. post-processing, including molding, test, FQC, FQA, packaging.
2. IC support plate novel surface processing method according to claim 1, which is characterized in that described in the step S5 Bright nickel layer with a thickness of 120-250 μ inch.
3. IC support plate novel surface processing method according to claim 1, which is characterized in that described in the step S5 Hard gold layer with a thickness of 1-10 μ inch.
4. IC support plate novel surface processing method according to claim 1, which is characterized in that described in the step S6 Joint face electroless nickel layer, the nickel layer with a thickness of 120-250 μ inch.
5. IC support plate novel surface processing method according to claim 1, which is characterized in that described in the step S6 Silver layer is electroplated in joint face, and the silver thickness is 25-60 μ inch.
6. IC support plate novel surface processing method according to claim 1, which is characterized in that described in the step S6 Joint face be electroplated layer gold, the layer gold with a thickness of 0.1-10 μ inch.
7. IC support plate novel surface processing method according to claim 1, which is characterized in that adopted in step S5, S6 Electro-plating method is the surface covering conductive layer for including: assist side;It is covered in the electroless coating region on the surface of the conductive layer Lid anti-plate protective layer;And be not electroplated by the plating area that anti-plate protective layer covers, it obtains at the first subsurface The electroplated metal layer of reason;Carry out non-first time surface treatment, wherein on the surface that upper primary surface treatment is formed, described The electroless coating region overlay anti-plate protective layer of non-first time surface treatment;And in the plating not covered by anti-plate protective layer Region is electroplated, and the electroplated metal layer of the non-first time surface treatment is obtained;Anti-plate protective layer is taken off, and is etched away not It is plated the conductive layer of metal layer covering.
CN201910035638.1A 2019-01-15 2019-01-15 A kind of IC support plate novel surface processing method Pending CN109661124A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112509933A (en) * 2021-02-04 2021-03-16 广东科翔电子科技股份有限公司 Process method for fully embedding components on IC carrier plate
CN114190012A (en) * 2021-12-02 2022-03-15 深圳市金晟达电子技术有限公司 Manufacturing method of chip carrier and chip carrier

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US20120164854A1 (en) * 2010-12-24 2012-06-28 Unimicron Technology Corporation Packaging substrate and method of fabricating the same
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CN107567196A (en) * 2017-08-16 2018-01-09 深圳市迅捷兴科技股份有限公司 The hard golden plate preparation method of top layer NiPdAu bottom
CN109041414A (en) * 2017-06-09 2018-12-18 同泰电子科技股份有限公司 Circuit board structure and its preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120164854A1 (en) * 2010-12-24 2012-06-28 Unimicron Technology Corporation Packaging substrate and method of fabricating the same
JP2016035998A (en) * 2014-08-05 2016-03-17 佳邦科技股▲ふん▼有限公司Inpaq Technology Co., Ltd. Method of manufacturing three-dimensional circuit by laser engraving
CN109041414A (en) * 2017-06-09 2018-12-18 同泰电子科技股份有限公司 Circuit board structure and its preparation method
CN107567196A (en) * 2017-08-16 2018-01-09 深圳市迅捷兴科技股份有限公司 The hard golden plate preparation method of top layer NiPdAu bottom

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112509933A (en) * 2021-02-04 2021-03-16 广东科翔电子科技股份有限公司 Process method for fully embedding components on IC carrier plate
CN114190012A (en) * 2021-12-02 2022-03-15 深圳市金晟达电子技术有限公司 Manufacturing method of chip carrier and chip carrier

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