CN109638397B - Double-layer stacked microwave band-pass filter - Google Patents
Double-layer stacked microwave band-pass filter Download PDFInfo
- Publication number
- CN109638397B CN109638397B CN201811307907.7A CN201811307907A CN109638397B CN 109638397 B CN109638397 B CN 109638397B CN 201811307907 A CN201811307907 A CN 201811307907A CN 109638397 B CN109638397 B CN 109638397B
- Authority
- CN
- China
- Prior art keywords
- glass substrate
- resonant cavity
- metal layer
- order
- order resonant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention relates to a double-layer stacked microwave band-pass filter, which comprises an upper metal layer, an upper glass substrate, a middle metal layer, a lower glass substrate and a lower metal layer which are sequentially arranged from top to bottom, wherein a first metal sheet and a second metal sheet are respectively arranged on opposite side walls of the upper metal layer; the upper glass substrate is provided with a plurality of upper glass substrate through holes, and first metal conductor columns are respectively filled in the upper glass substrate through holes; a first radiation window and a second radiation window are arranged on the middle metal layer; the lower glass substrate is provided with a plurality of lower glass substrate through holes, and second metal conductor columns are filled in the lower glass substrate through holes respectively. The filter adopts a three-dimensional integration technology and a glass substrate, so that the area of the filter structure is obviously reduced, and the glass substrate can eliminate the eddy current effect in a high-frequency circuit, so that the power consumption of the filter is obviously reduced, and the quality factor of the filter is improved.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing and packaging, and particularly relates to a double-layer stacked microwave band-pass filter.
Background
In recent years, driven by commercial application, millimeter wave wireless communication is rapidly developed, and most millimeter wave interconnection and passive devices are in a waveguide form, so that the loss is low. However, waveguide structures are generally bulky, expensive to produce, and difficult to integrate with Monolithic Microwave Integrated Circuits (MMICs) in a single system. Although the low temperature co-fired ceramic (LTCC) appeared later has stable dielectric constant and low loss in microwave and millimeter wave frequency bands, its wide application is greatly limited by its thick substrate and large volume.
The three-dimensional integration technology is characterized in that traditional two-dimensional integrated circuits are vertically stacked, silicon through holes are used as key structures in the three-dimensional integrated circuits and used for realizing signal transmission between upper and lower chips of the three-dimensional integrated circuits, and vertical interconnection and packaging between layers are realized through the silicon through holes, so that the integration level is obviously improved, the power consumption is reduced, and the system performance is improved. A Substrate Integrated Waveguide (SIW) structure is integrated on a chip in a three-dimensional system by utilizing a through silicon via three-dimensional integration technology, so that the SIW structure can be three-dimensionally integrated with other heterogeneous chips, and the volume of the whole microwave circuit system is remarkably reduced. However, the semiconductor silicon substrate has large loss under high frequency conditions, which prevents the wide application of the substrate integrated waveguide structure in three-dimensional integration.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a double-layered stacked microwave bandpass filter. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a double-layer stacked microwave band-pass filter, which comprises an upper metal layer, an upper glass substrate, a middle metal layer, a lower glass substrate and a lower metal layer which are arranged in sequence from top to bottom, wherein,
a first metal sheet and a second metal sheet are respectively arranged on the opposite side walls of the upper metal layer;
the upper glass substrate is provided with a plurality of upper glass substrate through holes, and first metal conductor columns are filled in the upper glass substrate through holes;
a first radiation window and a second radiation window are arranged on the middle metal layer, and the first radiation window and the second radiation window are communicated with the upper glass substrate and the lower glass substrate;
the lower glass substrate is provided with a plurality of lower glass substrate through holes, and second metal conductor columns are filled in the lower glass substrate through holes respectively.
In an embodiment of the invention, the opposite sidewalls of the upper metal layer are respectively provided with a first groove and a second groove, and the first metal sheet and the second metal sheet are respectively disposed in the first groove and the second groove.
In one embodiment of the present invention, a plurality of the upper glass substrate through holes are distributed in a grid shape on the upper glass substrate.
In an embodiment of the present invention, two ends of the first metal conductor pillar are respectively connected to the upper metal layer and the middle metal layer, and form an input resonant cavity, a first-order resonant cavity, a fourth-order resonant cavity, and an output resonant cavity together with the upper metal layer and the middle metal layer, wherein the first groove is disposed in the input resonant cavity, and the second groove is disposed in the output resonant cavity.
In an embodiment of the present invention, a first coupling window is disposed between the input resonant cavity and the first-order resonant cavity, for implementing magnetic coupling between the input resonant cavity and the first-order resonant cavity; and a second coupling window is arranged between the fourth-order resonant cavity and the output resonant cavity and used for realizing the magnetic coupling between the fourth-order resonant cavity and the output resonant cavity.
In one embodiment of the present invention, the first radiation window and the second radiation window are circular in shape, wherein the first radiation window is located below the first-order resonant cavity; the second radiation window is located below the fourth-order resonant cavity.
In one embodiment of the present invention, the length of the lower glass substrate is half of the length of the upper glass substrate, and the plurality of lower glass substrate through holes are distributed on the lower glass substrate in a shape of a Chinese character 'ri'.
In an embodiment of the present invention, two ends of the second metal conductor pillar are respectively connected to the middle metal layer and the lower metal layer, and the second metal conductor pillar, the middle metal layer and the lower metal layer form a second-order resonant cavity and a third-order resonant cavity; and a third coupling window is arranged between the second-order resonant cavity and the third-order resonant cavity and used for realizing magnetic coupling between the second-order resonant cavity and the third-order resonant cavity.
In one embodiment of the present invention, the second-order resonant cavity is located below the first-order resonant cavity, and the second-order resonant cavity and the first-order resonant cavity are electrically coupled through the first radiation window; the third-order resonant cavity is located below the fourth-order resonant cavity, and the third-order resonant cavity and the fourth-order resonant cavity are electrically coupled through the second radiation window.
In one embodiment of the present invention, a material of the upper metal layer, the intermediate metal layer, the lower metal layer, the first metal conductor pillar, and the second metal conductor pillar is copper.
Compared with the prior art, the invention has the beneficial effects that:
1. by adopting a double-layer stacking method, part of resonant cavities are placed on the lower glass substrate, the area of the filter structure is obviously reduced, the resonant cavities and impedance transformers are not required to be increased, and the band-pass microwave filter with even-order input and output impedance is realized.
2. The relative dielectric constant of the glass is far smaller than that of the silicon substrate, the glass substrate is adopted to replace the silicon substrate to manufacture the three-dimensional passive device, the eddy current effect in a high-frequency circuit can be eliminated, the high-frequency loss of the passive device is obviously reduced, the quality factor of the passive device is improved, the power consumption of the filter is obviously reduced, and the quality factor of the filter is improved.
3. By adopting the glass substrate and the three-dimensional integration technology, the characteristic size of the SIW structure is obviously reduced, and the resonant frequency extraction of the filter is obviously improved.
Drawings
FIG. 1 is a front view of a double-layered stacked microwave band-pass filter according to the present embodiment;
FIG. 2a is a top view of the upper metal layer of the double-layered stacked microwave band-pass filter of the present embodiment;
FIG. 2b is a top view of the middle metal layer of the double-layered stacked microwave band-pass filter of the present embodiment;
FIG. 2c is a top view of the lower metal layer of the double-layered stacked microwave band-pass filter of the present embodiment;
FIG. 3 is a schematic diagram of a coupling mechanism of the double-layer stacked microwave band-pass filter according to the present embodiment;
FIG. 4 is a schematic diagram showing a cross section of a square resonator of the filter of the present embodiment;
FIG. 5 shows the coupling coefficient k of the filter of the present embodiment12HFSS simulation model map of (1);
FIG. 6 shows the coupling coefficient k of the filter of the present embodiment23HFSS simulation model map of (1);
FIG. 7 is an external quality factor Q of the filter of the present embodimentEExtracting a cross-sectional schematic diagram of the model;
fig. 8 is a frequency response diagram of the filter of the present embodiment.
Description of reference numerals:
1-upper metal layer; 2-upper glass substrate; 3-intermediate metal layer; 4-lower glass substrate; 5-lower metal layer; 6-input port; 7-an output port; 8-upper glass substrate through holes; 9-a first radiation window; 10-a second radiation window; 11-lower glass substrate through hole; 12-a first groove; 13-a second groove; 14-a first coupling window; 15-a second coupling window; 16-a third coupling window; s-input resonant cavity; an L-output resonant cavity; r1 — first order cavity; r2 — second order cavity; r3-third order cavity; r4-fourth order cavity.
Detailed Description
The present disclosure is further described with reference to specific examples, but the embodiments of the present disclosure are not limited thereto.
The electromagnetic resonance mode of the filter of the present embodiment is TE101And the pass band is 75GHz-80 GHz. Referring to fig. 1 and fig. 2 a-2 c, fig. 1 is a front view of a double-layered stacked microwave band-pass filter of this embodiment, and fig. 2 a-2 c are top views of an upper metal layer, a middle metal layer and a lower metal layer of the double-layered stacked microwave band-pass filter of this embodiment, as shown in the figures, the double-layered stacked microwave band-pass filter of this embodiment includes an upper metal layer 1, an upper glass substrate 2, a middle metal layer 3, a lower glass substrate 4 and a lower metal layer 5, which are sequentially disposed from top to bottom, wherein opposite sidewalls of the upper metal layer 1 are respectively provided with a first metal sheet 6 and a second metal sheet 7, the first metal sheet 6 and the second metal sheet 7 are rectangular and have a length l1Has a width w of 970 μm1And 254 μm. A plurality of upper glass substrate through holes 8 are formed in the upper glass substrate 2, the upper glass substrate through holes 8 can be obtained by etching, and the diameter d of each upper glass substrate through hole 8TGV25 μm, and the first metal conductor pillars are filled therein, respectively. A first radiation window 9 and a second radiation window 10 are arranged on the middle metal layer 3, the first radiation window 9 and the second radiation window 10 can be obtained by etching, and the first radiation window 9 and the second radiation window 10 are both communicated with the upper glass substrate 2 and the lower glass substrate 4. A plurality of lower glass substrate through holes 11 are formed in the lower glass substrate 4, the lower glass substrate through holes 11 can be obtained by etching, and the diameter d of each lower glass substrate through hole 11TGV25 μm, and the inside thereof is filled with a second metal conductor pillar.
Specifically, the upper metal layer 1 is grounded, the upper glass substrate 2 serves as an upper substrate of the filter of the present embodiment, the middle metal layer 3 serves as a common ground layer for the upper glass substrate 2 and the lower glass substrate 4, the lower glass substrate 4 serves as a lower substrate of the filter of the present embodiment, and the lower metal layer 5 is used for timely transferring charges on the upper metal layer 1 to the ground; the first metal sheet 6 and the second metal sheet 7 serve as an input port and an output port of the filter of the present embodiment, respectively, for inputting and outputting electromagnetic waves, respectively. Furthermore, the opposite side walls of the upper metal layer 1 are respectively provided with a first groove 12 and a second groove 13, the first metal sheet 6 and the second metal sheet 7 are respectively arranged in the first groove 12 and the second groove 13, and the length l of the first metal sheet 6 and the length l of the second metal sheet 7 exceeding the first groove 12 and the second groove 13 are respectively2A groove width w of 345 μm for the first grooves 12 and the second grooves 132264 μm; the first metal conductor pillar and the upper glass substrate 2 form a grounding grid structure, and the lower metal layer 5, the upper metal layer 1, the middle metal layer 3, the first metal conductor pillar and the second metal conductor pillar form a closed filter resonant cavity.
Further, a plurality of upper glass substrate through holes 8 are distributed on the upper glass substrate 2 in a grid shape, and the center-to-center distance p between each upper glass substrate through hole 8TGVThe first metal conductor columns are respectively filled in the through holes 8 of the upper glass substrates, the two ends of each first metal conductor column are respectively connected with the upper metal layer 1 and the middle metal layer 3, and the first metal conductor columns and the upper metal layer 1 and the middle metal layer 3 form an input resonant cavity S, a first-order resonant cavity R1, a fourth-order resonant cavity R4 and an output resonant cavity L together. Further, a first groove 12 is provided in the input cavity S, and a second groove 13 is provided in the output cavity L. In this embodiment, the input cavity S, the first-order cavity R1, the fourth-order cavity R4 and the output cavity L are all square cavities, and the side length w is 1190 μm.
Further, a first coupling window 14 is provided between the input cavity S and the first-order cavity R1, and specifically, the upper glass substrate through hole 8 is not provided in the middle portion where the input cavity S is connected to the first-order cavity R1, thereby forming the first coupling window 14, with a window width wS1254 μm, which is used to achieve magnetic coupling between the input cavity S and the first order cavity R1; a second coupling window 15 is provided between the fourth-order resonator R4 and the output resonator L, and the upper glass substrate through-hole 8 is not provided in the middle portion where the fourth-order resonator R4 and the output resonator L are connected, thereby forming the second coupling window 15, with a window width wL4254 μm, for achieving magnetic coupling between the fourth order cavity R4 and the output cavity L.
Further, the first radiation window 9 and the second radiation window 10 are circular in shape, and the diameter d of the first radiation window 9 and the second radiation window 10CAt 352 μm, a first radiation window 9 is located at the bottom of the first-order cavity R1, and a second radiation window 10 is located at the bottom of the fourth-order cavity R4. The length of the lower glass substrate 4 is half of that of the upper glass substrate 2, a plurality of lower glass substrate through holes 11 are distributed on the lower glass substrate 4 in a shape of Chinese character ri, and the center distance p between the through holes 11 of each lower glass substrateTGVThe second metal conductor columns are respectively filled in the through holes 11 of the lower glass substrates, two ends of each second metal conductor column are respectively connected with the middle metal layer 3 and the lower metal layer 5 to form a second-order resonant cavity R2 and a third-order resonant cavity R3, specifically, the second-order resonant cavity R2 and the third-order resonant cavity R3 are both square resonant cavities, and the side length w of each second-order resonant cavity and the side length w of each third-order resonant cavity are 1190 mu m. A third coupling window 16 is arranged between the second-order resonant cavity R2 and the third-order resonant cavity R3, a lower glass substrate through hole 11 is not arranged at the middle part of the connection between the second-order resonant cavity R2 and the third-order resonant cavity R3, so that the third coupling window 16 is formed, and the window width w23424 μm, which is used to achieve magnetic coupling between the second order resonator R2 and the third order resonator R3.
Specifically, the second-order resonator R2 is located below the first-order resonator R1, and the second-order resonator R2 and the first-order resonator R1 are electrically coupled through the first radiation window 9; the third-order resonator R3 is located below the fourth-order resonator R4, and the third-order resonator R3 and the fourth-order resonator R4 are electrically coupled through the second radiation window 10.
Specifically, the material of the upper metal layer 1, the middle metal layer 3, the lower metal layer 5, the first metal conductor pillar, and the second metal conductor pillar is copper.
Referring to FIG. 3, FIG. 3 is a schematic diagram of a coupling mechanism of a double-layer stacked microwave band-pass filter, as shown in the figure, K12Denotes the coupling coefficient, K, between the first order cavity R1 and the second order cavity R223Denotes the coupling coefficient, K, between the second order cavity R2 and the third order cavity R334Represents the coupling coefficient, Q, between the third-order cavity R3 and the fourth-order cavity R4ERepresenting the external quality factor of the cavity. Specifically, the input cavity S and the first-order cavity R1 are magnetically coupled through the first coupling window 14; the first-order resonator R1 and the second-order resonator R2 are electrically coupled through the first radiation window 9; the second-order resonant cavity R2 and the third-order resonant cavity R3 realize magnetic coupling through a third coupling window 16; the third-order resonator R3 and the fourth-order resonator R4 are electrically coupled through the second radiation window 10; the fourth order cavity R4 is magnetically coupled to the output cavity L through a second coupling window 15.
The working process of the filter of the embodiment is as follows: firstly, electromagnetic waves to be filtered are input into an input resonant cavity S from the input port; then, the electromagnetic coupling is performed through the first coupling window 14 to the first resonator R1, and since the magnetic coupling is adopted between the input resonator S and the first-order resonator R1, the electromagnetic coupling mode can inhibit the propagation of the electromagnetic wave in the TE102 mode while propagating the electromagnetic wave in the TE101 mode, so that the energy in the TE102 mode cannot propagate to the first-order resonator R1; then, the electromagnetic wave is transmitted to the second resonant cavity R2 through the first radiation window 9, and the coupling mode is electric coupling; then, the electromagnetic wave continues to be transmitted to the third resonant cavity R3 through the third coupling window 16 in a magnetic coupling manner; then, the electromagnetic wave is transmitted to the fourth resonant cavity R4 through the second radiation window 10 in an electrical coupling manner, and finally, the electromagnetic wave is transmitted to the output resonant cavity L through the second coupling window 15 in a magnetic coupling manner and then is output from the output port.
When the filter works, the electromagnetic wave in the TE102 mode can be restrained while the electromagnetic wave in the TE101 mode is transmitted, so that the energy in the TE102 mode cannot be coupled and transmitted between the input resonant cavity S and the first-order resonant cavity R1 and between the fourth-order resonant cavity R4 and the output resonant cavity L, namely, a parasitic passband caused by high-order mode electromagnetic wave resonance is completely eliminated, a microwave band-pass filter with an ultra-wide stop band is obtained, and the rectangular coefficient of the filter is obviously improved.
The design method of the double-layer stacked microwave band-pass filter of the embodiment comprises the following steps: s1: and (4) calculating parameters of a low-pass prototype of the Chebyshev filter.
And (3) converting the complex frequency in the s domain, wherein the conversion formula is as follows:
wherein omegaaIs the first positive root of the even-order chebyshev polynomial and can be calculated by:
wherein n is an even number. Let s equal to j Ω (Ω ≧ Ω)a) Formula (1) is substituted with s ' ═ j Ω ', and Ω ' can be expressed as:
T′n(Ω')＝Tn(Ω)/Ω2 (4)
through formulas (3) to (5), an even-order Chebyshev polynomial T'nThe (Ω) can be corrected to (6).
Fourth order Tn(omega) and T'n(Ω) may be expressed as:
T4(Ω)＝8Ω4-8Ω2+1 (7)
for any two-port filter, its transmission characteristics can be expressed by the transmission equation h(s) and the reflection equation k(s):
for the chebyshev filter, the transmission equation h(s) and the reflection equation k(s) can be expressed as:
wherein ε is a real number, P(s) is a constant, and the calculation formulas are:
wherein A isPFor passband ripple, 0.5dB is chosen in this embodiment. Its input impedance can be expressed as:
substituting the formula (8) into the formulas (11) to (12), and synthesizing s '═ j Ω', | h(s) non-conducting electricity2，|K(s)|2E(s) and F(s) are respectively expressed as:
|H(s)|2＝4.14437s8+6.86661s6+2.84414s4+1 (16)
|K(s)|2＝4.14437s8+6.86661s6+2.84414s4 (17)
E(s)＝s4+1.52788s3+1.99563s2+1.40021s+0.49122 (18)
F(s)＝s4+0.82843s2 (19)
the input impedance Z can be calculated by polynomial divisionin(s) is expressed as:
through the calculation, the low-pass prototype parameters of the Chebyshev filter can be extracted, which are respectively as follows: g0＝1，g1＝g4＝1.309，g2＝g3＝1.542，g 51, which is used for the following coupling coefficient calculation.
S2: and designing and calculating the overall size of the filter.
S21: calculating the size of the resonant cavity;
the electromagnetic resonance mode of the filter of the present embodiment is TE101And the passband is 75GHz-80GHz, the center frequency is:
from (21) may be f0＝77.45GHz。
f0The dimensional relation with the equivalent rectangular waveguide is as follows:
wherein, weffAnd leffThe width and the length of the equivalent rectangular waveguide are respectively expressed as follows according to the relation with the SIW resonant cavity size:
for a square SIW cavity, then there is weff＝leffTherefore, equation (22) can be simplified as:
combination f0W can be calculated as 77.45GHzeffAnd finally, according to the formula (23), the side length w of the square resonant cavity of the SIW is 1200 μm. Modeling in High Frequency Structure Simulation (HFSS) three-dimensional electromagnetic simulation software based on the calculated SIW cavity size, with reference to FIG. 4, FIG. 4 is a schematic diagram of a square cavity cross-section of the filter of this embodiment, as shown by the diameter d of the substrate viaTGVCenter-to-center spacing p between two substrate vias of 25 μmTGVThe side length w of the square cavity is 1200 um, 50 um, and the resonant mode is set to 1. The central frequency of the SIW resonant cavity is 77.45GHz when w is 1190 μm as obtained by simulation adjustment.
S22: calculating a coupling coefficient;
measured by S1Calculating to obtain g1～g5The coupling coefficient between the resonant cavities can be further obtained by the calculation formula:
wherein, FBW is the relative bandwidth of the SIW band-pass filter, and the calculation formula is:
thus, k can be calculated12＝k34＝0.0454，k23＝0.0419。
Referring to fig. 5, fig. 5 shows a coupling coefficient k of the filter of the present embodiment12The coupling between the first-order resonator R1 and the second-order resonator R2 is electrically coupled, the coupling window is a first radiation window 9, and the coupling strength is determined by the diameter of the coupling window being dCDetermination of dCThe larger the coupling the stronger. Setting the resonant mode to 2, the simulation yields two resonant frequencies f1And f2According to f1And f2Can calculate k12Comprises the following steps:
obtained through simulation adjustment when dCA coupling coefficient k between the first-order cavity R1 and the second-order cavity R2 at 352 μm12＝0.0454。
Similarly, the coupling window between the third-order cavity R3 and the fourth-order cavity R4, i.e., the second radiation window 10, has a diameter of 352 μm.
Referring to fig. 6, fig. 6 shows the coupling coefficient k of the filter of the present embodiment23The coupling between the second-order resonator R2 and the third-order resonator R3 is magnetic coupling, the coupling window is the third coupling window 16, and the coupling strength is determined by the couplingThe width of the window is w23Determination of w23The larger the coupling the stronger. The resonant mode is set to 2, and simulation can obtain two resonant frequencies f1And f2，k12Still calculated from equation (28). Obtained through simulation adjustment when w23Coupling coefficient k between the second order resonator R2 and the third order resonator R3 at 424 μm23＝0.0419。
S23: external quality factor QEComputing
External quality factor Q of resonant cavityECalculated from the following formula:
calculated to obtain QE＝20.2789。
In HFSS three-dimensional electromagnetic simulation software, the external quality factor QECan be represented by the following formula:
wherein, ω is0＝2πf0，QEProportional to the S11 group delay tau of the resonatorS11Therefore, tau in HFSS three-dimensional electromagnetic simulation software can be calculatedS11Theoretical value of (1.66X 10)-10And s. Referring to fig. 7, fig. 7 shows the external quality factor Q of the filter of the present embodimentEExtracting a cross-sectional schematic diagram of the model, as shown in the figure, modeling in HFSS three-dimensional electromagnetic simulation software, and when each parameter is respectively adjusted to be: w 1190 μm1＝254μm，w2＝264μm，wSL＝254μm，l1＝970μm，l2At 345 μm,. tau.S11The simulation value of (1) is up to a maximum of (1.66) x 10-10s and the position of the maximum is at f0＝77.45GHz。
According to the above calculation results, the resonant cavities are integrated according to the coupling mechanism to finally obtain the double-layer stacked microwave band-pass filter of the embodiment, wherein the resonant cavity S and the first order are inputThe width w of the first coupling window 14 between the resonators R1S1＝wSL254 μm, the width w of the second coupling window 15 between the output cavity L and the fourth order cavity R4L4＝wSL＝254μm。
Referring to fig. 8, fig. 8 is a frequency response diagram of the filter of this embodiment, as shown in the figure, the higher-order mode electromagnetic wave, i.e. the TE102 mode closest to the TE101 mode, has a resonant frequency of 122.47GHz, and the parasitic passband caused by its resonance is completely eliminated, so as to obtain a microwave band-pass filter with an ultra-wide stopband, and significantly improve the rectangular coefficient of the filter.
The double-layer stacked glass substrate integrated waveguide ultra-wide stopband microwave band-pass filter adopts a double-layer stacking method, places part of resonant cavities on the lower glass substrate, obviously reduces the area of the filter structure, does not need to increase the resonant cavities and impedance converters, and realizes the band-pass microwave filter with even-order input and output impedance. The glass substrate is adopted to replace a silicon substrate to manufacture the three-dimensional passive device, so that the eddy current effect in a high-frequency circuit can be eliminated, the high-frequency loss of the passive device is obviously reduced, the quality factor of the passive device is improved, the power consumption of the filter is obviously reduced, and the quality factor of the filter is improved. Meanwhile, the characteristic size of the SIW structure is remarkably reduced by adopting a glass substrate and a three-dimensional integration technology, so that the resonant frequency extraction of the filter is remarkably improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (5)
1. A double-layer stacked microwave band-pass filter is characterized by comprising an upper metal layer (1), an upper glass substrate (2), a middle metal layer (3), a lower glass substrate (4) and a lower metal layer (5) which are arranged from top to bottom in sequence, wherein,
a first metal sheet (6) and a second metal sheet (7) are respectively arranged on the opposite side walls of the upper metal layer (1);
a plurality of upper glass substrate through holes (8) are arranged on the upper glass substrate (2), the diameter of each upper glass substrate through hole (8) is 25 mu m, the center distance between each upper glass substrate through hole (8) is 50 mu m, a first metal conductor column is filled in each upper glass substrate through hole (8), wherein,
the two ends of the first metal conductor column are respectively connected with the upper metal layer (1) and the middle metal layer (3), and form an input resonant cavity (S), a first-order resonant cavity (R1), a fourth-order resonant cavity (R4) and an output resonant cavity (L) together with the upper metal layer (1) and the middle metal layer (3), the first metal sheet (6) is arranged in the input resonant cavity (S), and the second metal sheet (7) is arranged in the output resonant cavity (L);
a first coupling window (14) is arranged between the input resonant cavity (S) and the first-order resonant cavity (R1) and is used for realizing magnetic coupling between the input resonant cavity (S) and the first-order resonant cavity (R1); a second coupling window (15) is arranged between the fourth-order resonant cavity (R4) and the output resonant cavity (L) and is used for realizing magnetic coupling between the fourth-order resonant cavity (R4) and the output resonant cavity (L);
a first radiation window (9) and a second radiation window (10) are arranged on the middle metal layer (3), and the first radiation window (9) and the second radiation window (10) are communicated with the upper glass substrate (2) and the lower glass substrate (4);
a plurality of lower glass substrate through holes (11) are arranged on the lower glass substrate (4), the diameter of each lower glass substrate through hole (11) is 25 mu m, the center distance between each lower glass substrate through hole (11) is 50 mu m, a second metal conductor column is filled in each lower glass substrate through hole (11), wherein,
two ends of the second metal conductor column are respectively connected with the middle metal layer (3) and the lower metal layer (5), and the second metal conductor column, the middle metal layer (3) and the lower metal layer (5) form a second-order resonant cavity (R2) and a third-order resonant cavity (R3);
a third coupling window (16) is arranged between the second-order resonant cavity (R2) and the third-order resonant cavity (R3), and the third coupling window (16) is used for realizing magnetic coupling between the second-order resonant cavity (R2) and the third-order resonant cavity (R3);
the first radiation window (9) and the second radiation window (10) are circular in shape, wherein the first radiation window (9) is located below the first order resonant cavity (R1); the second radiation window (10) is located below the fourth order resonant cavity (R4);
the second order resonant cavity (R2) is located below the first order resonant cavity (R1), the second order resonant cavity (R2) and the first order resonant cavity (R1) being electrically coupled through the first radiation window (9); the third-order resonant cavity (R3) is located below the fourth-order resonant cavity (R4), the third-order resonant cavity (R3) and the fourth-order resonant cavity (R4) being electrically coupled through the second radiation window (10).
2. The double-stacked microwave bandpass filter according to claim 1, characterized in that the upper metal layer (1) has first and second grooves (12, 13) respectively formed on opposite sidewalls thereof, the first metal sheet (6) being disposed in the first groove (12), and the second metal sheet (7) being disposed in the second groove (13).
3. The double-stacked microwave bandpass filter according to claim 2, characterized in that a plurality of the upper glass substrate through holes (8) are distributed in a grid shape on the upper glass substrate (2).
4. The double-stacked microwave bandpass filter according to claim 3, characterized in that the length of the lower glass substrate (4) is half of the length of the upper glass substrate (2), and the plurality of lower glass substrate through holes (11) are distributed on the lower glass substrate (4) in a zigzag shape.
5. The double-layer stacked microwave bandpass filter according to any one of claims 1 to 4, characterized in that the materials of the upper metal layer (1), the middle metal layer (3), the lower metal layer (5), the first metal conductor pillar and the second metal conductor pillar are all copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811307907.7A CN109638397B (en) | 2018-11-05 | 2018-11-05 | Double-layer stacked microwave band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811307907.7A CN109638397B (en) | 2018-11-05 | 2018-11-05 | Double-layer stacked microwave band-pass filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109638397A CN109638397A (en) | 2019-04-16 |
| CN109638397B true CN109638397B (en) | 2021-02-02 |
Family
ID=66067315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811307907.7A Active CN109638397B (en) | 2018-11-05 | 2018-11-05 | Double-layer stacked microwave band-pass filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109638397B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854496B (en) * | 2019-09-11 | 2021-06-29 | 西安电子科技大学 | Compact three-dimensional Murphy balun based on through silicon via |
| CN113471654B (en) * | 2021-05-21 | 2022-08-05 | 西安电子科技大学 | Glass-based wide-stop-band microwave duplexer |
| CN113471653B (en) * | 2021-05-21 | 2022-02-18 | 西安电子科技大学 | Glass-based wide-stop-band microwave filter |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410336A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Stacked type three-order substrate integrated waveguide filter |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3367496B1 (en) * | 2016-01-29 | 2020-10-07 | Huawei Technologies Co., Ltd. | Filter unit and filter |
| CN105846024B (en) * | 2016-05-17 | 2019-07-19 | 电子科技大学 | A kind of SIW double-layer cavity filter |
| CN106252800B (en) * | 2016-07-18 | 2019-03-12 | 中国科学院微电子研究所 | Substrate integrated waveguide filter with adjustable center frequency and manufacturing method thereof |
| CN106848510A (en) * | 2017-03-03 | 2017-06-13 | 南京理工大学 | A kind of dual-passband difference filter of laminate substrate integrated wave guide structure |
| CN107302122A (en) * | 2017-06-02 | 2017-10-27 | 南京理工大学 | Three-passband filter based on substrate integration wave-guide |
| CN207690974U (en) * | 2017-12-25 | 2018-08-03 | 石家庄创天电子科技有限公司 | Substrate integral wave guide filter |
| CN108539336B (en) * | 2018-05-11 | 2019-12-20 | 杭州电子科技大学 | HMSIW dual-mode dual-band filter with independently controllable bandwidth |
-
2018
- 2018-11-05 CN CN201811307907.7A patent/CN109638397B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410336A (en) * | 2016-09-29 | 2017-02-15 | 上海航天测控通信研究所 | Stacked type three-order substrate integrated waveguide filter |
Non-Patent Citations (3)
| Title |
|---|
| Multilayer Substrate Integrated Waveguide (SIW) Filters With Higher-Order Mode Suppression;Dinghong Jia等;《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》;20160930;第26卷(第9期);全文 * |
| Wideband Substrate Integrated Waveguide Bandpass Filter Based on 3-D ICs;Xiaoxian Liu等;《IEEE Transactions on Components, Packaging and Manufacturing Technology》;20181031;第9卷(第4期);全文 * |
| 一种新型多层1/4模基片集成波导滤波器;董亚洲等;《空间电子技术》;20121231(第4期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109638397A (en) | 2019-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109728389B (en) | Double-layer stacked differential microwave wide-stop band-pass filter structure | |
| CN109638397B (en) | Double-layer stacked microwave band-pass filter | |
| JP5466340B2 (en) | Coupling mechanism for microwave reentrant resonant cavity attached to PCB | |
| CN106602190A (en) | Multilayer substrate integration waveguide filter with high out-of-band rejection | |
| CN104538714A (en) | Band-pass filter with center frequency adjustable | |
| CN112701431A (en) | Filter and wireless communication system | |
| CN109728390B (en) | Double-layer stacked differential microwave band-pass filter | |
| CN110380172B (en) | Double-layer stacked differential dual-passband microwave band-pass filter | |
| CN112271421B (en) | Glass-based high-isolation three-dimensional duplexer | |
| CN110176660B (en) | Double-layer stacked differential microwave band-pass filter based on higher order mode | |
| Karshenas et al. | Size reduction and harmonic suppression of parallel coupled-line bandpass filters using defected ground structure | |
| CN113471653B (en) | Glass-based wide-stop-band microwave filter | |
| CN209282363U (en) | A kind of filter | |
| CN110459847A (en) | The interdigital bandpass filter of electromagnetic coupling and design method based on multi-through hole | |
| CN208272092U (en) | A kind of miniature multilayer ceramics millimeter wave band bandpass filter | |
| CN205647456U (en) | IPD low pass filter | |
| CN211320273U (en) | Dielectric waveguide filter capable of realizing single out-of-band transmission zero | |
| CN114843730A (en) | Millimeter wave high selectivity gap waveguide filter | |
| Zhang et al. | Synthesis of second-order bandpass frequency selective structure using planar slotline inverters | |
| Chen et al. | All-planar dual-mode asymmetric filters at Ka-band | |
| TW202123527A (en) | Dielectric waveguide resonator and dielectric waveguide filter | |
| Xu et al. | Compact LTCC source-load coupled SIW filter using mixed coupling | |
| CN113471654B (en) | Glass-based wide-stop-band microwave duplexer | |
| Dai et al. | LTCC bandpass filter for Bluetooth™ application with dual transmission zeros | |
| Dai et al. | A miniaturized and low insertion loss LTCC filter with two finite transmission zeros for bluetooth application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |