CN106410336A - Stacked type three-order substrate integrated waveguide filter - Google Patents
Stacked type three-order substrate integrated waveguide filter Download PDFInfo
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- CN106410336A CN106410336A CN201610864483.9A CN201610864483A CN106410336A CN 106410336 A CN106410336 A CN 106410336A CN 201610864483 A CN201610864483 A CN 201610864483A CN 106410336 A CN106410336 A CN 106410336A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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Abstract
The invention discloses a stacked type three-order substrate integrated waveguide filter. The stacked type three-order substrate integrated waveguide filter comprises a top surface metal layer, a first dielectric substrate, a first middle metal layer, a second dielectric substrate, a second middle metal layer, a third dielectric substrate and a bottom surface metal layer which are stacked and distributed in sequence, wherein a first resonant cavity, a second resonant cavity and a third resonant cavity are formed in the first dielectric substrate, the second dielectric substrate and the third dielectric substrate respectively; an input port is formed in the top surface metal layer; an output port is formed in the bottom surface metal layer; the first middle metal layer is used for adjusting the magnetic coupling coefficient between the first resonant cavity and the second resonant cavity to obtain a first transmission zero point; and the second middle metal layer is used for adjusting the magnetic coupling coefficient between the second resonant cavity and the third resonant cavity to obtain a second transmission zero point. The stacked type three-order substrate integrated waveguide filter provided by the invention, by adjusting the electromagnetic coupling strength and obtaining extra transmission zero points, greatly improves frequency selection and harmonic suppression characteristics without changing the existing dimensions.
Description
Technical field
The present invention relates to substrate integral wave guide filter technical field, particularly to a kind of integrated ripple of stack three rank substrate
Waveguide filter.
Background technology
With the fast development of the aspects such as mobile communication and satellite communication, microwave integrated circuit is proposed with higher wanting
Ask.Highly reliable equipment requirements microwave integrated circuit, while meeting electricity function index, should reduce circuit as far as possible and take
Area.High quality factor (Q-value), etc. time delay, low insertion loss in band, the outer high rejection characteristic of band narrow band filter more next
More is taken seriously.Wherein high quality factor and etc. time delay will not produce impact to the phase place of signal；Relatively low band interpolation
Damage and then in trap signal, impact will not be produced on useful frequency spectrum；The outer higher rejection characteristic of band then can be believed to useless frequency spectrum
Number suppressed, so that the signal obtaining is easier identified, will not be affected by noise.
Substrate integrated waveguide technology is proposed based on the integrated thought of waveguiding structure, and it typically passes through in double-sided copper-clad
The upper and lower metal covering of low loss dielectric substrate between introduce periodicity plated-through hole array, so upper and lower metal covering is equivalent to medium
The broadside of filling rectangular waveguide.From after substrate integrated waveguide technology generation, it is applied to various bandpass filterings by substantial amounts of first
In the design of device, while improving it and frequently select characteristic by introducing multiple transmission zeros, can be due to the presence of multiple resonators
Cause the increase of circuit area and the deterioration of logical in-band insertion loss.
Find after line retrieval through entering to existing substrate integral wave guide filter, in order to realize miniaturization, substrate is integrated
The filter delivered in waveguide vertical stacking, such as IEEE TRANS.ON MICROWAVE AND THEORY TECHNOLOGY volume 55
Ripple device (Design of vertically stacked waveguide filters in LTCC) one literary composition, by level quarter
Substrate integration wave-guide resonator obtaining quasi- oblong nature, thus reaching the purpose improving sideband abruptness.However, its needs is many
Layer process just enables, and the parasitic character of passband is poor, for garbage signal be noise degree of suppression inadequate.
Content of the invention
The present invention is directed to above-mentioned problems of the prior art, proposes a kind of stack three rank substrate integration wave-guide filtering
Device, it can be regarded as and be formed by two second order substrate integral wave guide filter cascades, change the coupling of two second order filters
Close coefficient properties, can be with the transmission zero of this third-order filter of independent control, thus reaching, to improve filter frequencies selective
Purpose.
For solving above-mentioned technical problem, the present invention is achieved through the following technical solutions：
The present invention provides a kind of stack three rank substrate integral wave guide filter, and it includes：Stack gradually the top surface of distribution
Metal level, the first intermediate metal layer, the second intermediate metal layer and bottom-side metal layer, wherein,
Between described topside metal layer and described first intermediate metal layer, in described first intermediate metal layer and described second
Between be respectively arranged between metal level and between described second intermediate metal layer and described bottom-side metal layer：First medium base
Plate, second medium substrate and the 3rd medium substrate；
Form first respectively humorous on described first medium substrate, described second medium substrate and described 3rd medium substrate
Shake chamber, the second resonator cavity and the 3rd resonator cavity；
It is provided with input port on topside metal layer, described bottom-side metal layer is provided with output port；
Described first intermediate metal layer is used for adjusting the magnetic coupling between described first resonator cavity and described second resonator cavity
Coefficient, to obtain first transmission zero；
Described second intermediate metal layer is used for adjusting the electric coupling between described second resonator cavity and described 3rd resonator cavity
Coefficient, to obtain the second transmission zero.
It is preferred that being provided with described first medium substrate, described second medium substrate and described 3rd medium substrate
Metallization via.
It is preferred that the metallization via in described first medium substrate include multiple, and multiple described metallization via edge
The edge of described first medium substrate is arranged in array, to form described first resonator cavity；And/or,
Metallization via in described second medium substrate includes multiple, and multiple described metallization via is along described second
The edge of medium substrate is arranged in array, to form described second resonator cavity；And/or,
The metallization via in metallization in described 3rd medium substrate includes multiple, and multiple described metallization via
Edge along described 3rd medium substrate is arranged in array, to form described 3rd resonator cavity.
It is preferred that being provided with described first intermediate metal layer：First perforate and the first fluting, for obtaining in lower sideband
Take first transmission zero；
It is provided with described second intermediate metal layer：Second perforate and the second fluting, for obtaining second in upper sideband
Transmission zero.
It is preferred that the size of described first perforate, described first perforate deviate the centre bit of described first intermediate metal layer
Put and the size of described first fluting is used for adjusting the position of described first transmission zero.
It is preferred that the size of described second perforate, described second perforate deviate the centre bit of described second intermediate metal layer
The distance put and the size of described second fluting are used for adjusting the position of described second transmission zero.
It is preferred that the described size of the first fluting and the size of described second perforate are respectively used to adjust described magnetic coupling
Coefficient and the size of described electric coupling coefficient.
It is preferred that the co-planar waveguide microstrip circuit that described input port and described output port go out for chemical attack.
It is preferred that described input port and described output port filter with respect to described stack three rank substrate integration wave-guide
Device is centrosymmetric structure.
Compared to prior art, the present invention has advantages below：
(1) the stack three rank substrate integral wave guide filter that the present invention provides, can regard the integrated ripple of two second orders as
The vertical stacking of waveguide filter, by analyzing the mixing electricity between two substrate integral wave guide filters, magnetic coupling, realizes permissible
The transmission zero controlling is thus obtain preferable frequency selectivity；
(2) present invention, by the method in intermediate layer perforate and fluting, adjusts electromagnetic coupling strengths, obtains extra biography
Defeated zero point, contrasts existing filter construction, and the present invention is not changing physical dimension simultaneously, substantially improving it and frequently select harmonic
Rejection characteristic；
(3) hybrid coupled is introduced in three rank substrate integration wave-guide cross-coupled filters the present invention, in traditional three ranks
Obtain quasi- oblong nature in substrate integration wave-guide cross coupling structure, high-performance has been realized using novel stacking coupling topology
Substrate integration wave-guide element, substantially improves it and frequently selects the increase again not resulting in circuit area while characteristic and passband interpolation
Enter the deterioration of loss；
(4) the stack three rank substrate integral wave guide filter of the present invention, using chemical attack, the i.e. knot of printed circuit board (PCB)
Structure, is easy to process.
Certainly, the arbitrary product implementing the present invention it is not absolutely required to reach all the above advantage simultaneously.
Brief description
Below in conjunction with the accompanying drawings embodiments of the present invention are described further：
Fig. 1 is the structural representation of the stack three rank substrate waveguide filter of embodiments of the invention；
Fig. 2 a be embodiments of the invention magnetic coupling account for the driver's seat second order substrate integral wave guide filter structure
Figure；
Fig. 2 b is the top view of Fig. 2 a；
Fig. 2 c is the transfer curve of the input port of the second order substrate integral wave guide filter of Fig. 2 a to output port
Figure；
When Fig. 2 d accounts for the driver's seat for magnetic coupling, the coefficient of coup is with the distance of circular hole size rad1, off center cavity
The situation of change figure of diff1 and gap length Ls1；
Fig. 3 a be embodiments of the invention electric coupling account for the driver's seat second order substrate integral wave guide filter structure
Figure；
Fig. 3 b is the top view of Fig. 3 a；
Fig. 3 c is the transfer curve of the input port of the second order substrate integral wave guide filter of Fig. 3 a to output port
Figure；
Fig. 4 is for bandwidth in the stack three rank substrate integral wave guide filter of embodiments of the invention with Ls1, the change of rad2
Change situation map；
Fig. 5 a is that the size of the input port of stack three rank substrate integral wave guide filter of embodiments of the invention is shown
It is intended to；
Fig. 5 b is that the size of the output port of stack three rank substrate integral wave guide filter of embodiments of the invention is shown
It is intended to；
Fig. 6 a is the change with L3 for the transmission zero of the stack three rank substrate integral wave guide filter of embodiments of the invention
Change figure；
Fig. 6 b is the change with L4 for the transmission zero of the stack three rank substrate integral wave guide filter of embodiments of the invention
Change figure；
Fig. 7 is the input port of the stack three rank substrate integral wave guide filter of embodiments of the invention to output port
Transfer curve figure.
Label declaration：1- topside metal layer, 2- first intermediate metal layer, 3- second intermediate metal layer, 4- bottom-side metal layer,
5- first medium substrate, 6- second medium substrate, 7- the 3rd medium substrate, 8- input port, 9- output port, 10- first opens
Hole, 11- second perforate, 12- first slots, and 13- second slots.
Specific embodiment
Below embodiments of the invention are elaborated, the present embodiment is carried out under premised on technical solution of the present invention
Implement, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following enforcements
Example.
In conjunction with Fig. 1-Fig. 7, the stack three rank substrate integral wave guide filter of the present invention is described in detail, its structure
Schematic diagram is as shown in figure 1, it includes：The topside metal layer 1 that stacks gradually, the first intermediate metal layer 2, the second intermediate metal layer 3
And bottom-side metal layer 4, it is provided with first medium substrate 5, in the middle of first between topside metal layer 1 and the first intermediate metal layer 2
It is provided with second medium substrate 6, the second intermediate metal layer 2 and bottom-side metal layer 4 between metal level 2 and the second intermediate metal layer 3
Between be provided with the 3rd medium substrate 7；Input interface 8 is provided with topside metal layer 1, bottom-side metal layer 4 is provided with output
Interface 9.First resonator cavity, second humorous is formed respectively on first medium substrate 5, second medium substrate 6 and the 3rd medium substrate 7
Shake chamber and the 3rd resonator cavity.
In the present embodiment, by setting respectively in first medium substrate 5, second medium substrate 6 and the 3rd medium substrate 7
Put multiple plated-through holes, multiple plated-through holes along medium substrate edge be in array distribution, formed respectively the first resonator cavity,
Second resonator cavity and the 3rd resonator cavity.
The design principle of the present invention is：Cross-coupling coefficient matrix can behave as：
By this coefficient matrix, we can obtain two transmission zeros：
Ω 1=M23 M3L/M2L
Ω 2=MS1 M12/MS2
M12 based on magnetic coupling and M23 based on electric coupling controls this two transmission zeros respectively, when both directions
It is possible to obtain two transmission zeros in height sideband when contrary, thus increased Out-of-band rejection, obtaining preferable frequency and selecting
Property.
The wave filter of the present embodiment, hybrid coupled is introduced in three rank substrate integration wave-guide cross-coupled filters,
Quasi- oblong nature has been obtained in traditional three rank substrate integration wave-guide cross coupling structures, real using novel stacking coupling topology
Existing high-performance substrate integration wave-guide element, substantially improve its frequently select while characteristic without cause circuit area increase and
The deterioration of logical in-band insertion loss.The present embodiment can regard the combination of two second order substrate integral wave guide filters as, one
For the wave filter I of the first resonator cavity and the second resonator cavity composition, as shown in Figure 2 a, it is that magnetic coupling accounts for control to its structural representation
Status, its top view as shown in Figure 2 b, has wherein marked the diameter rad1 of the first perforate, and the first perforate deviates the first intermetallic metal
The center of layer apart from diff1, length Ls1 of the first fluting, Fig. 2 c gives the transmission characteristic to output port for the input port |
S21 | situation of change, when Fig. 2 d gives magnetic coupling and accounts for the driver's seat, the coefficient of coup is with circular hole size rad1, off center chamber
The situation of change figure apart from diff1 and gap length Ls1 of body, the size of the first perforate is less, the first longer, then magnetic coupling of fluting
Close stronger, size rad1, the distance of the center of first perforate deviation the first intermediate metal layer of the first perforate can be passed through
Size Ls1 of diff1 and first fluting obtains first transmission zero in lower sideband.Another is the second resonator cavity and the 3rd humorous
Shake chamber composition wave filter II, as shown in Figure 3 a, it is that electric coupling accounts for the driver's seat to its structural representation, its top view such as Fig. 3 b
Shown, wherein mark the diameter rad2 of one or two perforates, the second perforate deviates the distance of the center of the second intermediate metal layer
Diff2, length Ls2 of the first fluting, Fig. 3 c gives the change feelings to transmission characteristic | S21 | of output port for the output port
Condition, the size of the second perforate 11 is bigger, and the second fluting 13 is shorter, then electric coupling is stronger, can be by adjusting the chi of the second perforate
Size Ls2 apart from diff2 and second fluting that very little rad2, the second perforate deviate the center of the second intermediate metal layer exists
Upper sideband obtains the second transmission zero.
Intra resonant cavity center electric field is the strongest and magnetic field is the weakest.Resonator cavity is stacked in a vertical direction, composition
One second order filter.The conductor surface center perforate of cavity intermediate layer, the main electric coupling affecting second order resonator cavity, by adjusting
The size of whole perforate and the offset distance from central cavity can control electric coupling coefficient, and aperture is bigger, distance center cavity
Electric coupling between the more short then cavity of offset distance is stronger.In cavity intermediate layer, conductor surface surrounding fluting can affect up and down in the same manner
The magnetic coupling of cavity, the size of adjustment fluting can control magnetic coupling coefficient, and the magnetic coupling slotted between more long then cavity is stronger.
As Fig. 4 gives in stack three rank substrate integral wave guide filter bandwidth with Ls1, the situation of change figure of rad2,
Can be by adjusting Ls1, the size Control bandwidth of rad2, Ls1, rad2 numerical value is bigger, magnetic coupling coefficient M12 and electric coupling coefficient
M23 then mutually strains greatly, then bandwidth is wider.
As Fig. 5 a, 5b sets forth the dimensional drawing of input port 8, output port 9, when L3, L4 change, transmission zero
Position also and then change, such as Fig. 6 a, 6b sets forth the situation of change figure with L3, L4 for the transmission zero, when L3 becomes big,
MS1 is corresponding to become big, thus transmission zero offsets to lower sideband, otherwise when L4 becomes big, M3L becomes big, and transmission zero is to flash
Band skew.
As Fig. 7 gives the transmission characteristic of the input port of stack three rank substrate integral wave guide filter to output port
The simulation result of | S21 |, it is determined that its bandwidth of operation, two transmission zero location, demonstrates the effect of the wave filter of the present embodiment
Really.
In the present embodiment, during input interface 8 and output interface 9 with respect to stack three rank substrate integral wave guide filter are in
Heart symmetrical structure, is easy to structure optimization.
In preferred embodiment, the output interface 9 on input interface 8 and bottom-side metal layer 4 on topside metal layer 1 is to pass through
The co-planar waveguide microstrip circuit that chemical attack makes, processing is simple and convenient.
Disclosed herein is only the preferred embodiments of the present invention, and this specification is chosen and specifically described these embodiments, is
In order to preferably explain principle and the practical application of the present invention, it is not limitation of the invention.Any those skilled in the art
The modifications and variations done in the range of description, all should fall in the range of the present invention is protected.
Claims (9)
1. a kind of stack three rank substrate integral wave guide filter is it is characterised in that include：Stack gradually the topside metal of distribution
Layer, the first intermediate metal layer, the second intermediate metal layer and bottom-side metal layer, wherein,
Gold between described topside metal layer and described first intermediate metal layer, in the middle of described first intermediate metal layer and described second
Belong between layer and be respectively arranged between described second intermediate metal layer and described bottom-side metal layer：First medium substrate,
Second medium substrate and the 3rd medium substrate；
Form the first resonance respectively on described first medium substrate, described second medium substrate and described 3rd medium substrate
Chamber, the second resonator cavity and the 3rd resonator cavity；
It is provided with input port on topside metal layer, described bottom-side metal layer is provided with output port；
Described first intermediate metal layer is used for adjusting the magnetic coupling coefficient between described first resonator cavity and described second resonator cavity,
To obtain first transmission zero；
Described second intermediate metal layer is used for adjusting the electric coupling coefficient between described second resonator cavity and described 3rd resonator cavity,
To obtain the second transmission zero.
2. stack three rank substrate integral wave guide filter according to claim 1 is it is characterised in that described first medium
It is provided with metallization via in substrate, described second medium substrate and described 3rd medium substrate.
3. stack three rank substrate integral wave guide filter according to claim 2 is it is characterised in that described first medium
Metallization via in substrate include multiple, and multiple described metallization via along described first medium substrate edge be in array
Arrangement, to form described first resonator cavity；And/or,
Metallization via in described second medium substrate include multiple, and multiple described metallization via along described second medium
The edge of substrate is arranged in array, to form described second resonator cavity；And/or,
The metallization via in metallization in described 3rd medium substrate include multiple, and multiple described metallization via along institute
The edge stating the 3rd medium substrate is arranged in array, to form described 3rd resonator cavity.
4. stack three rank substrate integral wave guide filter according to claim 1 is it is characterised in that in the middle of described first
It is provided with metal level：First perforate and the first fluting, for obtaining first transmission zero in lower sideband；
It is provided with described second intermediate metal layer：Second perforate and the second fluting, for obtaining the second transmission in upper sideband
Zero point.
5. stack three rank substrate integral wave guide filter according to claim 4 is it is characterised in that described first perforate
Size, described first perforate deviate described first intermediate metal layer center and described first fluting size be used for
Adjust the position of described first transmission zero.
6. stack three rank substrate integral wave guide filter according to claim 4 is it is characterised in that described second perforate
Size, described second perforate deviate described second intermediate metal layer the distance of center and described second fluting chi
The very little position for adjusting described second transmission zero.
7. stack three rank substrate integral wave guide filter according to claim 4 is it is characterised in that described first slots
Size and the size of described second perforate be respectively used to adjust the big of described magnetic coupling coefficient and described electric coupling coefficient
Little.
8. stack three rank substrate integral wave guide filter according to claim 1 is it is characterised in that described input port
And the co-planar waveguide microstrip circuit that described output port goes out for chemical attack.
9. stack three rank substrate integral wave guide filter according to claim 1 is it is characterised in that described input port
It is centrosymmetric structure with respect to described stack three rank substrate integral wave guide filter with described output port.
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Cited By (18)
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| CN108183295A (en) * | 2017-12-26 | 2018-06-19 | 上海交通大学 | Double-passband filter based on commensurability transmission circuit network |
| CN108461876A (en) * | 2018-02-12 | 2018-08-28 | 北京理工大学 | A kind of medium integral wave guide filter based on GaAs technology |
| CN109326859A (en) * | 2018-10-29 | 2019-02-12 | 南京航空航天大学 | TM bimodulus based on SIW balances bandpass filter |
| CN109616727A (en) * | 2018-11-15 | 2019-04-12 | 西安电子科技大学昆山创新研究院 | A kind of bandpass filter and preparation method thereof |
| CN109638397A (en) * | 2018-11-05 | 2019-04-16 | 西安电子科技大学 | A kind of double stacked declines pass band filter |
| CN109687070A (en) * | 2018-12-31 | 2019-04-26 | 瑞声科技（南京）有限公司 | Millimeter wave LTCC filter |
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| CN111755781A (en) * | 2020-07-02 | 2020-10-09 | 电子科技大学 | LTCC process-based three-order hybrid electromagnetic coupling SIW filter |
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| CN111755784B (en) * | 2020-07-02 | 2021-12-31 | 电子科技大学 | Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading |
| CN112086722A (en) * | 2020-09-07 | 2020-12-15 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
| CN112086722B (en) * | 2020-09-07 | 2022-03-01 | 郑州宇林电子科技有限公司 | Design method of miniaturized band-pass filter with high selectivity and wide stop band |
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| CN113097711B (en) * | 2021-03-31 | 2022-06-14 | 华南理工大学 | Substrate integrated waveguide filter antenna with high selective radiation efficiency |
| CN113314840A (en) * | 2021-05-26 | 2021-08-27 | 维沃移动通信有限公司 | Display device and electronic apparatus |
| CN113328223A (en) * | 2021-06-29 | 2021-08-31 | 展讯通信（上海）有限公司 | Third-order band-pass filter |
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| CN114665238A (en) * | 2022-03-02 | 2022-06-24 | 电子科技大学 | X-band SIW Archimedes spiral coupling filter and design method thereof |
| CN114665238B (en) * | 2022-03-02 | 2022-12-16 | 电子科技大学 | X-band SIW Archimedes spiral coupling filter and design method thereof |
| CN114824708A (en) * | 2022-04-27 | 2022-07-29 | 南京邮电大学 | Waveguide band-pass filter integrated by multilayer substrate |
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