CN109638125A - A kind of flip LED chips and preparation method thereof - Google Patents
A kind of flip LED chips and preparation method thereof Download PDFInfo
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- CN109638125A CN109638125A CN201811256110.9A CN201811256110A CN109638125A CN 109638125 A CN109638125 A CN 109638125A CN 201811256110 A CN201811256110 A CN 201811256110A CN 109638125 A CN109638125 A CN 109638125A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 137
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims description 57
- 230000005611 electricity Effects 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 17
- 239000006071 cream Substances 0.000 abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 59
- 238000010586 diagram Methods 0.000 description 40
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- 238000001259 photo etching Methods 0.000 description 19
- 239000007769 metal material Substances 0.000 description 16
- 239000011810 insulating material Substances 0.000 description 15
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a kind of flip LED chips and preparation method thereof, belong to technical field of semiconductors.The flip LED chips include substrate, n type semiconductor layer, active layer, p type semiconductor layer, reflective layer, insulating layer, P-type electrode, N-type electrode, N-type pad and p-type pad；Insulating layer between the N-type pad and the p-type pad is equipped with the second groove extended to the reflective layer, the depth of second groove is less than the thickness of the insulating layer, and the distance between second groove and the N-type pad are not equal to the distance between second groove and the p-type pad.The present invention causes N-type pad and p-type pad to be connected and the second groove added is expressed between two pads when it is possible to prevente effectively from tin cream is in bonding pad and bracket, substantially increases the reliability of flip-chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of flip LED chips and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind can be converted to electric energy
The semiconductor diode of luminous energy.As a kind of novel light-emitting device, LED technology is quickly grown, application field is extensive, industry drives
Property it is strong, energy-saving potential is big, meet the requirement of low-carbon ecological economy and the development trend of contemporary new industry.It is illuminated with conventional electrical
It compares, LED illumination has many advantages, such as energy-saving and environmental protection, longevity and efficient, is known as most promising illumination by various countries and produces
Industry.
Chip is the core component of LED, is divided into positive assembling structure, inverted structure and three kinds of vertical structure.With traditional formal dress
Chip is compared, and flip-chip has many advantages, such as high current, reliably and using simplicity, has obtained large-scale application at present.
Existing flip-chip includes substrate, n type semiconductor layer, active layer, p type semiconductor layer, reflective layer, insulating layer, P
Type electrode, N-type electrode, N-type pad and p-type pad.N type semiconductor layer, active layer and p type semiconductor layer are sequentially laminated on substrate
On, p type semiconductor layer is equipped with the groove for extending to n type semiconductor layer.Reflective layer is laid on p type semiconductor layer, and reflective
Layer is equipped with the through-hole for extending to p type semiconductor layer.P-type electrode is arranged on reflective layer, and extends to p-type by through-hole and partly lead
Body layer；N-type electrode is arranged on the n type semiconductor layer in groove.Insulating layer be laid in groove except N-type electrode region it
On region on outer region and reflective layer in addition to P-type electrode region.P-type pad is arranged in P-type electrode and P
On the insulating layer of type surrounding them, N-type pad is arranged on the insulating layer around N-type electrode and N-type electrode.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Flip-chip will use tin cream for two pads of N-type pad and p-type pad and be bonded in bracket in encapsulation process
Specified region allows current to enough pins by bracket and injects flip-chip.Since tin cream has certain mobility,
Tin cream is easy to be expressed between two pads when being bonded pad and bracket, and N-type pad and p-type pad is caused to be connected.
Summary of the invention
The embodiment of the invention provides a kind of flip LED chips and preparation method thereof, are able to solve prior art N-type pad
The problem of with the conducting of p-type pad.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of flip LED chips, the flip LED chips include substrate, N-type
Semiconductor layer, active layer, p type semiconductor layer, reflective layer, insulating layer, P-type electrode, N-type electrode, N-type pad and p-type pad；Institute
It states n type semiconductor layer, the active layer and the p type semiconductor layer to stack gradually on the first surface of the substrate, the P
Type semiconductor layer is equipped with the first groove for extending to the n type semiconductor layer；The N-type electrode is arranged in first groove
On interior n type semiconductor layer, the P-type electrode is arranged on the p type semiconductor layer, and the reflective layer is partly led in the p-type
Body layer is on the region in addition to the P-type electrode region；It is interior and described anti-that the insulating layer is laid on first groove
On photosphere, the insulating layer is equipped with the first through hole for extending to the P-type electrode and extends to the N-type electrode and is second logical
Hole；The N-type pad and the p-type pad are arranged at intervals on the insulating layer, and the p-type pad passes through the first through hole
The P-type electrode is extended to, the N-type pad extends to the N-type electrode by second through-hole；
Insulating layer between the N-type pad and the p-type pad is equipped with the second groove extended to the reflective layer,
The depth of second groove is less than the thickness of the insulating layer, and the distance between second groove and the N-type pad are no
Equal to the distance between second groove and the p-type pad.
In a kind of possible implementation of the embodiment of the present invention, the p type semiconductor layer is equipped with and extends to the N-type
The third groove of semiconductor layer, the projection of second groove on the first surface and the third groove are described first
Projection on surface is overlapped, and the depth of second groove is equal to the depth of the third groove.
Optionally, the depth of the third groove is equal to the depth of first groove.
Preferably, the depth of second groove is 1 μm~2 μm.
Optionally, the distance between second groove and the N-type pad are less than second groove and the p-type is welded
The distance between disk.
Preferably, the distance between second groove and the N-type pad are 5 μm~100 μm.
Optionally, the width of second groove is 10 μm~50 μm.
In the alternatively possible implementation of the embodiment of the present invention, the insulating layer is equipped with to be connected with the first through hole
The 4th logical groove and the 5th groove being connected to second through-hole；The p-type pad is arranged in the 4th groove
Interior, the thickness of the p-type pad is equal to the sum of depth and length of the first through hole of the 4th groove；The N-type weldering
Disk is arranged in the 5th groove, depth of the thickness equal to the 5th groove of the N-type pad and second through-hole
The sum of length.
Optionally, the depth of the 4th groove is equal to the depth of second groove, the depth etc. of the 5th groove
In the depth of second groove.
On the other hand, the embodiment of the invention provides a kind of production method of flip LED chips, the production method packets
It includes:
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on the first surface of substrate；
The first groove for extending to the n type semiconductor layer is opened up on the p type semiconductor layer；
Reflective layer is formed on the p type semiconductor layer；
N-type electrode is set on the n type semiconductor layer in first groove, and in the p type semiconductor layer except described
P-type electrode is set on region except reflective layer region；
Insulating layer is formed in first groove and on the reflective layer, the insulating layer is equipped with and extends to the P
The first through hole of type electrode, the second through-hole for extending to the N-type electrode and the second groove extended to the reflective layer,
The depth of second groove is less than the thickness of the insulating layer, and second groove is located at the first through hole and described second
Between through-hole, and the distance between second groove and the first through hole are logical with described second not equal to second groove
The distance between hole；
Interval setting N-type pad and p-type pad, the p-type pad are prolonged by the first through hole on the insulating layer
The P-type electrode is extended to, the N-type pad extends to the N-type electrode by second through-hole.
Technical solution provided in an embodiment of the present invention has the benefit that
By opening up the second groove extended to reflective layer on the insulating layer between N-type pad and p-type pad, make viscous
The tin cream being expressed between two pads when connecing pad and bracket flows in the second groove.Since the depth of the second groove is less than
The thickness of insulating layer, therefore the bottom of the second groove is insulating layer, can be led to avoid the tin cream in the second groove with conductive material
It is logical.The distance between the second groove and N-type pad are not equal to the distance between the second groove and p-type pad simultaneously, can prevent
Due to two pad middles are arranged in the second groove and lead to that the tin cream squeezed out from two pads all flows into the second groove and
Conducting.To sum up, the second groove that the embodiment of the present invention is added is it is possible to prevente effectively from tin cream is extruded when being bonded pad and bracket
To causing N-type pad and p-type pad to be connected between two pads, the reliability of flip-chip is substantially increased.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of flip LED chips provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another flip LED chips provided in an embodiment of the present invention；
Fig. 3 is a kind of flow chart of the production method of flip LED chips provided in an embodiment of the present invention；
Fig. 4 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 201
Structure schematic diagram；
Fig. 5 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 202
Structure schematic diagram；
Fig. 6 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 203
Structure schematic diagram；
Fig. 7 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 204
Structure schematic diagram；
Fig. 8 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 205
Structure schematic diagram；
Fig. 9 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 206
Structure schematic diagram；
Figure 10 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 301
Structural schematic diagram；
Figure 11 is the flip LED chips that production method provided in an embodiment of the present invention is formed after step 302 is performed
Structural schematic diagram；
Figure 12 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 303
Structural schematic diagram；
Figure 13 is the flip LED chips that production method provided in an embodiment of the present invention is formed after step 304 is performed
Structural schematic diagram；
Figure 14 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 305
Structural schematic diagram；
Figure 15 is the flip LED chips that production method provided in an embodiment of the present invention is formed after step 306 is performed
Structural schematic diagram；
Figure 16 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 401
Structural schematic diagram；
Figure 17 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 402
Structural schematic diagram；
Figure 18 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 403
Structural schematic diagram；
Figure 19 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 404
Structural schematic diagram；
Figure 20 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 405
Structural schematic diagram；
Figure 21 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 406
Structural schematic diagram.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of flip LED chips.Fig. 1 is a kind of flip LED provided in an embodiment of the present invention
The structural schematic diagram of chip.Referring to Fig. 1, which includes substrate 10, n type semiconductor layer 21, active layer 22, p-type half
Conductor layer 23, reflective layer 30, insulating layer 40, P-type electrode 51, N-type electrode 52, N-type pad 53 and p-type pad 54.N-type semiconductor
Layer 21, active layer 22 and p type semiconductor layer 23 are sequentially laminated on the first surface of substrate 10, and p type semiconductor layer 23 is equipped with
Extend to the first groove 100 of n type semiconductor layer 21.The n type semiconductor layer 21 in the first groove 100 is arranged in N-type electrode 52
On, P-type electrode 51 is arranged on p type semiconductor layer 23, and reflective layer 30 removes 51 region of P-type electrode in p type semiconductor layer 23
Except region on.Insulating layer 40 is laid in the first groove 100 and on reflective layer 30, and insulating layer 40 is equipped with and extends to p-type
The first through hole 200 of electrode 51 and the second through-hole 300 for extending to N-type electrode 52.N-type pad 53 and the interval of p-type pad 54 are set
It sets on insulating layer 40, p-type pad 54 extends to P-type electrode 51 by first through hole 200, and N-type pad 53 passes through the second through-hole
300 extend to N-type electrode 52.
In the present embodiment, as shown in Figure 1, the insulating layer 40 between N-type pad 53 and p-type pad 54 is equipped with to reflective
The second groove 400 that layer 30 extends, the depth d1 of the second groove 400 are less than the thickness d 2 of insulating layer 40, the second groove 400 and N
The distance between type pad 53 s1 is not equal to the distance between the second groove 400 and p-type pad 54 s2.
In practical applications, the distance between the second groove 400 and N-type pad 53 s1 can be less than the second groove 400 and P
The distance between type pad 54 s2 can also be greater than the distance between the second groove 400 and p-type pad 54 s2.It needs to illustrate
It is, only with the distance between the second groove 400 and N-type pad 53 s1 less than between the second groove 400 and p-type pad 54 in Fig. 1
Distance s2 for, be not intended as limitation of the present invention.
The embodiment of the present invention is by opening up extend to reflective layer the on the insulating layer between N-type pad and p-type pad
Two grooves flow to the tin cream being expressed between two pads when being bonded pad and bracket in the second groove.Due to second
The depth of groove is less than the thickness of insulating layer, therefore the bottom of the second groove is insulating layer, can be to avoid the tin in the second groove
Cream is connected with conductive material.The distance between the second groove and N-type pad are not equal between the second groove and p-type pad simultaneously
Distance can prevent that two pad middles are arranged in due to the second groove and the tin cream squeezed out from two pads is caused all to flow into
It is connected in second groove.To sum up, the embodiment of the present invention is added the second groove it is possible to prevente effectively from tin cream in bonding pad and
It is expressed into when bracket between two pads and N-type pad and p-type pad is caused to be connected, substantially increase the reliable of flip-chip
Property.And realize simple process, it is suitble to industrialized production.
In a kind of implementation of the present embodiment, N-type is extended to as shown in Figure 1, can be equipped on p type semiconductor layer 23
The third groove 500 of semiconductor layer 21, the projection of the second groove 400 on the first surface and third groove 500 are in first surface
On projection be overlapped, the depth d1 of the second groove 400 is equal to the depth d3 of third groove 500.
By the way that third groove is opened up on p type semiconductor layer in advance, then sequentially form on p type semiconductor layer reflective layer and
Insulating layer, thus inconsistent using the height of third groove and p type semiconductor layer other parts, self-assembling formation on the insulating layer
Two grooves are conducive to the position for accurately setting the second groove.
In practical applications, it can also be not provided with extending to the third groove of n type semiconductor layer 21 on p type semiconductor layer 23
500, at this time can be using photoetching technique and lithographic technique to layer pattern, directly the second groove of formation, implementation is more
It is intuitive.
Optionally, as shown in Fig. 2, the depth d3 of third groove 500 can be equal to the depth d4 of the first groove 100.Third
Groove and the first groove can be formed using photoetching process together, greatly reduce cost of implementation.
Preferably, the depth d1 of the second groove 400 can be 1 μm~2 μm.If the depth of the second groove less than 1 μm,
May due to the depth of the second groove is smaller and can not be efficiently housed in bonding pad and when bracket be expressed into two pads it
Between tin cream；If the depth of the second groove is greater than 2 μm, insulating layer may be led to since the depth of the second groove is larger
Thickness is larger, increases production cost, while may also lead to extension electric characteristic abnormality.
Optionally, as shown in Fig. 2, the distance between the second groove 400 and N-type pad 53 s1 can be less than the second grooves
The distance between 400 and p-type pad 54 s2.Second groove is arranged close to N-type pad, and third groove is arranged also close to N-type pad,
It can reduce the area of p type semiconductor layer for opening up third groove and separating, avoid impacting chip light emitting as far as possible.
Preferably, the distance between the second groove 400 and N-type pad 53 s1 can be 5 μm~100 μm.If second is recessed
The distance between slot and N-type pad may then be influenced less than 5 μm since the distance between the second groove and N-type pad are smaller
To opening up for third groove；If the distance between the second groove and N-type pad are greater than 100 μm, may be due to the second groove
The distance between N-type pad is larger and causes biggish negatively influencing to chip light emitting.
Optionally, the width s3 of the second groove 400 can be 10 μm~50 μm.If the width of the second groove is less than 10 μ
M then may can not be efficiently housed in bonding pad and when bracket is expressed into two welderings since the width of the second groove is smaller
Tin cream between disk, while also will increase manufacture difficulty；It, may be due to second recessed if the width of the second groove is greater than 50 μm
The width of slot is larger and causes the tin cream squeezed out from two pads all to flow into the second groove and is connected, but also can reduce luminous
Area generates negatively influencing to brightness.
Fig. 2 is the structural schematic diagram of another flip LED chips provided in an embodiment of the present invention.Referring to fig. 2, in this implementation
In another implementation of example, the 4th groove 600, the Yi Jiyu being connected to first through hole 200 can be equipped on insulating layer 40
5th groove 700 of the second through-hole 300 connection；P-type pad 54 is arranged in the 4th groove 600, thickness d 5 of p-type pad 54 etc.
In the sum of the depth d6 and the length d7 of first through hole 200 of the 4th groove 600；N-type pad 53 is arranged in the 5th groove 700, N
The thickness d 8 of type pad 700 is equal to the sum of the depth d9 and the length d10 of the second through-hole 300 of the 5th groove 700.By by p-type
Pad and the setting of N-type pad can further avoid tin cream and be expressed into two when being bonded pad and bracket in insulating inner
Cause N-type pad and p-type pad to be connected between pad, improves the reliability of flip-chip.
Optionally, the depth d6 of the 4th groove 600 can be equal to the depth of the second groove 400, the depth of the 5th groove 700
D9 can be equal to the depth of the second groove 400.4th groove, the 5th groove and the second groove can be using using photoetching works together
Skill is formed, and cost of implementation is greatly reduced.
In practical applications, the quantity of the second groove 400 can be one, or multiple.For example, second in Fig. 2
The quantity of groove 400 is two, and the distance between second groove 400 and N-type pad 53 are less than the second groove 400 and p-type
The distance between pad 54, the distance between another second groove 400 and N-type pad 53 are greater than the second groove 400 and weld with p-type
The distance between disk 54.
Specifically, the material of substrate 10 can use sapphire, preferably graphical sapphire substrate (English:
Patterned Sapphire S, referred to as: PSS).The material of n type semiconductor layer 21 can use the nitridation of n-type doping (such as silicon)
Gallium.Active layer 22 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum build alternately laminated setting；
The material of Quantum Well can use InGaN, and the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 23 can
Using the gallium nitride of p-type doping (such as magnesium).The metallic reflector that reflective layer 30 can be formed for metal materials such as silver, aluminium,
It can be Distributed Bragg Reflection layer (English: Distributed Bragg Reflection, abbreviation: DBR).Insulating layer 40
Material can use silica (SiO2) or silicon nitride (SiN).P-type electrode 51, N-type electrode 52, p-type pad 53, N-type
The material of pad 54 can be using one in golden (Au), aluminium (Al), copper (Cu), nickel (Ni), platinum (Pt), chromium (Cr), titanium (Ti)
Kind is a variety of.
Optionally, which can also include transparent conductive film, and transparent conductive film setting is partly led in p-type
On body layer.Further, the material of transparent conductive film can be using tin indium oxide (English: Indium tin oxide, letter
Claim: ITO).
The embodiment of the invention provides a kind of production method of flip LED chips, it is suitable for making shown in fig. 1 or fig. 2
Flip LED chips.Fig. 3 provides a kind of flow chart of the production method of flip LED chips for the embodiment of the present invention.It, should referring to Fig. 3
Production method includes:
Step 201: n type semiconductor layer, active layer and p type semiconductor layer are successively grown on the first surface of substrate.
Fig. 4 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 201
Structure schematic diagram.Wherein, 10 substrate is indicated, 21 indicate n type semiconductor layer, and 22 indicate active layer, and 23 indicate p type semiconductor layer.Ginseng
See that Fig. 4, n type semiconductor layer 21, active layer 22, p type semiconductor layer 23 are sequentially laminated on a surface of the 10 of substrate.
Specifically, which may include:
Using metallo-organic compound chemical gaseous phase deposition (English: Metal Organic Chemical Vapor
Deposition, referred to as: MOCVD) technology successively grows n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Step 202: the first groove for extending to n type semiconductor layer is opened up on p type semiconductor layer.
Fig. 5 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 202
Structure schematic diagram.Wherein, 100 the first groove is indicated.Referring to Fig. 5, the first groove 100 extends to N-type from p type semiconductor layer 23 and partly leads
Body layer 21.
Specifically, which may include:
The photoresist of certain figure is formed on p type semiconductor layer using photoetching technique, photoresist is arranged in P-type semiconductor
Layer is on the region in addition to the first groove region；
Using sense coupling (English: Inductive Coupled Plasma Etch, abbreviation: ICP)
Equipment dry etching does not have the p type semiconductor layer of photoresist overlay and active layer, forms the first groove；
Remove photoresist.
In specific implementation, the photoresist that certain figure is formed using photoetching technique may include:
It is laid with a layer photoresist；
Photoresist is exposed by the mask plate of certain figure；
Photoresist after exposure is impregnated in developer solution, part photoresist is dissolved, the photoresist left is schemed needed for being
The photoresist of shape.
Step 203: reflective layer is formed on p type semiconductor layer.
Fig. 6 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 203
Structure schematic diagram.Wherein, 30 reflective layer is indicated.Referring to Fig. 6, reflective layer 30 is arranged on the partial region of p type semiconductor layer 23.
Optionally, when reflective layer is metallic reflector, which may include:
The photoresist of certain figure is formed in the first groove and on p type semiconductor layer using photoetching technique, photoresist is set
It sets in the first groove and p type semiconductor layer is on region in addition to reflective layer region；
Using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD) technology in photoresist
With metal material is laid on p type semiconductor layer；
The metal material of photoresist and laying on a photoresist is removed, the metal material left forms reflective layer.
Optionally, when reflective layer is DBR, which may include:
DBR in the first groove and is formed on p type semiconductor layer using PVD technique；
The photoresist of certain figure is formed on DBR using photoetching technique, photoresist setting is removing reflective layer region
Except region on；
Dry etching does not have the DBR of photoresist overlay, and the DBR left forms reflective layer；
Remove photoresist.
Step 204: N-type electrode is set on the n type semiconductor layer in the first groove, and in p type semiconductor layer except reflective
P-type electrode is set on region except layer region.
Fig. 7 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after performing step 204
Structure schematic diagram.Wherein, 51 P-type electrode is indicated, 52 indicate N-type electrode.Referring to Fig. 7, P-type electrode 51 is arranged in p type semiconductor layer
On 23 region in addition to 30 region of reflective layer, the n type semiconductor layer 21 in the first groove 100 is arranged in N-type electrode 52
On.
Specifically, which may include:
Form the photoresist of certain figure in the first groove and on reflective layer using photoetching technique, photoresist setting is the
On region in one groove in addition to N-type electrode region；
Metal material is being laid on photoresist, n type semiconductor layer and p type semiconductor layer using PVD technique；
The metal material of photoresist and laying on a photoresist is removed, the metal material on n type semiconductor layer forms N-type electricity
Pole, the metal material on p type semiconductor layer form P-type electrode.
Step 205: insulating layer is formed in the first groove and on reflective layer, insulating layer is equipped with and extends to P-type electrode
First through hole, the second through-hole for extending to N-type electrode and the second groove extended to reflective layer, the depth of the second groove are small
In the thickness of insulating layer, the second groove is between first through hole and the second through-hole, and between the second groove and first through hole
Distance is not equal to the distance between the second groove and the second through-hole.
Fig. 8 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 205
Structure schematic diagram.Wherein, 40 insulating layer is indicated, 200 indicate first through hole, and 300 indicate the second through-hole, and 400 indicate the second groove.Ginseng
See that Fig. 8, insulating layer 40 are arranged in the first groove 100 on reflective layer 30, first through hole 200 extends to p-type from insulating layer 40
Electrode 51, the second through-hole 300 extend to N-type electrode 52 from insulating layer 40, and the second groove 400 prolongs from insulating layer 40 to reflective layer 30
It stretches.
Specifically, which may include:
Insulating materials is laid in the first groove, in reflective layer and P-type electrode using PVD technique；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist setting except first through hole and
On region except second through-hole region；
Dry etching does not have the insulating materials of photoresist overlay, forms first through hole and the second through-hole；
Remove photoresist；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist setting is removing the second groove institute
On the region except region；
Dry etching does not have the insulating materials of photoresist overlay, forms the second groove, and the insulating materials left forms insulation
Layer；
Remove photoresist.
In practical applications, it can also be initially formed the second groove, re-form first through hole and the second through-hole.
Step 206: interval setting N-type pad and p-type pad, p-type pad extend to P by first through hole on the insulating layer
Type electrode, N-type pad extend to N-type electrode by the second through-hole.
Fig. 9 is the knot for the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 206
Structure schematic diagram.Wherein, 53 N-type pad is indicated, 54 indicate p-type pad.Referring to Fig. 9, N-type pad 53 and the interval of p-type pad 54 are set
It sets on insulating layer 40, p-type pad 54 extends to P-type electrode 51 by first through hole 200, and N-type pad 53 passes through the second through-hole
300 extend to N-type electrode 52.
Specifically, which may include:
The photoresist of certain figure is formed on the insulating layer using photoetching technique, photoresist setting is removing N-type pad and p-type
On region except pad region；
Using PVD technique in the N-type in the p type semiconductor layer and the second through-hole in photoresist, insulating layer, first through hole
Metal material is laid on semiconductor layer；
Remove the metal material of photoresist and laying on a photoresist, the insulation around p type semiconductor layer and first through hole
Metal material on layer forms p-type pad, and the metal material on insulating layer around n type semiconductor layer and the second through-hole forms N
Type pad.
It improves, is formed shown in FIG. 1 especially suitable for production as follows on the basis of production method shown in Fig. 3
The production method for filling LED chip.Specifically, which may include:
Step 301: n type semiconductor layer, active layer and p type semiconductor layer are successively grown on the first surface of substrate.
Figure 10 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 301
Structural schematic diagram.Wherein, 10 substrate is indicated, 21 indicate n type semiconductor layer, and 22 indicate active layer, and 23 indicate p type semiconductor layer.
Referring to Figure 10, n type semiconductor layer 21, active layer 22, p type semiconductor layer 23 are sequentially laminated on a surface of the 10 of substrate.
Specifically, which can be identical as step 201, and this will not be detailed here.
Step 302: opening up the first groove for extending to n type semiconductor layer on p type semiconductor layer and extend to N-type
The third groove of semiconductor layer.
Figure 11 is the flip LED chips that production method provided in an embodiment of the present invention is formed after step 302 is performed
Structural schematic diagram.Wherein, 100 the first groove is indicated, 500 indicate third groove.Referring to Figure 11, the first groove 100 and third are recessed
Slot 500 extends to n type semiconductor layer 21, and the depth phase of the first groove 100 and third groove 500 from p type semiconductor layer 23
Deng.
Specifically, which may include:
The photoresist of certain figure is formed on p type semiconductor layer using photoetching technique, photoresist is arranged in P-type semiconductor
Layer is on the region in addition to the first groove and third groove region；
There is no the p type semiconductor layer of photoresist overlay and an active layer using ICP equipment dry etching, formed the first groove and
Third groove；
Remove photoresist.
Step 303: reflective layer is formed on p type semiconductor layer.
Figure 12 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 303
Structural schematic diagram.Wherein, 30 reflective layer is indicated.Referring to Figure 12, the partial region of p type semiconductor layer 23 is arranged in reflective layer 30
On.
Specifically, which can be identical as step 203, and this will not be detailed here.
Step 304: N-type electrode is set on the n type semiconductor layer in the first groove, and in p type semiconductor layer except reflective
P-type electrode is set on region except layer region.
Figure 13 is the flip LED chips that production method provided in an embodiment of the present invention is formed after step 304 is performed
Structural schematic diagram.Wherein, 51 P-type electrode is indicated, 52 indicate N-type electrode.Referring to Figure 13, P-type electrode 51 is arranged in P-type semiconductor
For layer 23 on the region in addition to 30 region of reflective layer, the n type semiconductor layer in the first groove 100 is arranged in N-type electrode 52
On 21.
Specifically, which can be identical as step 204, and this will not be detailed here.
Step 305: insulating layer is formed in the first groove and on reflective layer, insulating layer is equipped with and extends to P-type electrode
First through hole, the second through-hole for extending to N-type electrode and the second groove extended to reflective layer, the depth of the second groove are small
In the thickness of insulating layer, the second groove is between first through hole and the second through-hole, and between the second groove and first through hole
Distance is not equal to the distance between the second groove and the second through-hole.
Figure 14 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 305
Structural schematic diagram.Wherein, 40 insulating layer is indicated, 200 indicate first through hole, and 300 indicate the second through-hole, and 400 indicate the second groove.
Referring to Figure 14, insulating layer 40 is arranged in the first groove 100 on reflective layer 30, and first through hole 200 extends to P from insulating layer 40
Type electrode 51, the second through-hole 300 extend to N-type electrode 52 from insulating layer 40, and the second groove 400 is with third groove 500 in substrate
Projection on 10 first surface is overlapped, and identical direction extends.
Specifically, which may include:
Insulating materials is laid in the first groove, in reflective layer and P-type electrode using PVD technique；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist setting except first through hole and
On region except second through-hole region；
Dry etching does not have the insulating materials of photoresist overlay, forms first through hole and the second through-hole, the insulation material left
Material forms insulating layer；
Remove photoresist.
Step 306: interval setting N-type pad and p-type pad, p-type pad extend to P by first through hole on the insulating layer
Type electrode, N-type pad extend to N-type electrode by the second through-hole.
Figure 15 is the flip LED chips that production method provided in an embodiment of the present invention is formed after step 306 is performed
Structural schematic diagram.Wherein, 53 N-type pad is indicated, 54 indicate p-type pad.Referring to Figure 15, N-type pad 53 and p-type pad 54 are spaced
It is arranged on insulating layer 40, p-type pad 54 extends to P-type electrode 51 by first through hole 200, and N-type pad 53 is logical by second
Hole 300 extends to N-type electrode 52.
Specifically, which can be identical as step 206, and this will not be detailed here.
Above-mentioned production method can be formed to avoid independent using one of photoetching process compared with production method shown in Fig. 2
Second groove reduces the number of photoetching process, reduces cost of implementation.
It improves, is formed shown in Fig. 2 especially suitable for production as follows on the basis of production method shown in Fig. 3
The production method for filling LED chip.Specifically, which may include:
Step 401: n type semiconductor layer, active layer and p type semiconductor layer are successively grown on the first surface of substrate.
Figure 16 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 401
Structural schematic diagram.Wherein, 10 substrate is indicated, 21 indicate n type semiconductor layer, and 22 indicate active layer, and 23 indicate p type semiconductor layer.
Referring to Figure 16, n type semiconductor layer 21, active layer 22, p type semiconductor layer 23 are sequentially laminated on a surface of the 10 of substrate.
Specifically, which can be identical as step 201, and this will not be detailed here.
Step 402: the first groove for extending to n type semiconductor layer is opened up on p type semiconductor layer.
Figure 17 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 402
Structural schematic diagram.Wherein, 100 the first groove is indicated.Referring to Figure 17, the first groove 100 extends to N-type from p type semiconductor layer 23
Semiconductor layer 21.
Specifically, which can be identical as step 202, and this will not be detailed here.
Step 403: reflective layer is formed on p type semiconductor layer.
Figure 18 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 403
Structural schematic diagram.Wherein, 30 reflective layer is indicated.Referring to Figure 18, the partial region of p type semiconductor layer 23 is arranged in reflective layer 30
On.
Specifically, which can be identical as step 203, and this will not be detailed here.
Step 404: N-type electrode is set on the n type semiconductor layer in the first groove, and in p type semiconductor layer except reflective
P-type electrode is set on region except layer region.
Figure 19 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 404
Structural schematic diagram.Wherein, 51 P-type electrode is indicated, 52 indicate N-type electrode.Referring to Figure 19, P-type electrode 51 is arranged in P-type semiconductor
For layer 23 on the region in addition to 30 region of reflective layer, the n type semiconductor layer in the first groove 100 is arranged in N-type electrode 52
On 21.
Specifically, which can be identical as step 204, and this will not be detailed here.
Step 405: insulating layer is formed in the first groove and on reflective layer, insulating layer is equipped with and extends to P-type electrode
First through hole, the 4th groove being connected to first through hole, the second through-hole for extending to N-type electrode, be connected to the second through-hole
Five grooves and the second groove extended to reflective layer, the depth of the second groove are less than the thickness of insulating layer, and the second groove is located at
Between first through hole and the second through-hole, and the distance between the second groove and first through hole are not equal to the second groove and the second through-hole
The distance between.
Figure 20 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 405
Structural schematic diagram.Wherein, 40 insulating layer is indicated, 200 indicate first through hole, and 300 indicate the second through-hole, and 400 indicate the second groove,
600 indicate the 4th groove, and 700 indicate the 5th groove.Referring to fig. 20, insulating layer 40 is arranged in the first groove 100 and reflective layer
On 30, insulating layer 40 is equipped with the second groove 400, the 4th groove 600 and the 5th groove 700 that extend to reflective layer 30, and first
Through-hole 200 extends to P-type electrode 51 from the second groove 400, and the second through-hole 300 extends to N-type electrode 52 from the 5th groove 700.
Specifically, which may include:
Insulating materials is laid in the first groove, in reflective layer and P-type electrode using PVD technique；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist setting except first through hole and
On region except second through-hole region；
Dry etching does not have the insulating materials of photoresist overlay, forms first through hole and the second through-hole；
Remove photoresist；
Form the photoresist of certain figure on the insulating material using photoetching technique, photoresist setting except the second groove,
On region except 4th groove and the 5th groove region；
Dry etching does not have the insulating materials of photoresist overlay, forms the second groove, the 4th groove and the 5th groove, leaves
Insulating materials formed insulating layer；
Remove photoresist.
In practical applications, the second groove, the 4th groove and the 5th groove can also be initially formed, re-form first through hole and
Second through-hole.
Step 406: p-type pad is formed in the 4th groove, p-type pad extends to P-type electrode by first through hole, and
N-type pad is formed in 5th groove, N-type pad extends to N-type electrode by the second through-hole.
Figure 21 is the flip LED chips that production method provided in an embodiment of the present invention is formed after executing step 406
Structural schematic diagram.Wherein, 53 N-type pad is indicated, 54 indicate p-type pad.Referring to fig. 21, p-type pad 54 is arranged in the 4th groove
In 600, and P-type electrode 51 is extended to by first through hole 200, the thickness of p-type pad 54 be equal to the 4th groove 600 depth and
The sum of the length of first through hole 200；N-type pad 53 is arranged in the 5th groove, and extends to N-type electricity by the second through-hole 300
The thickness of pole 52, N-type pad 53 is equal to the depth of the 5th groove 700 and the sum of the length of the second through-hole 300.
Specifically, which may include:
It is formed on the insulating layer the photoresist of certain figure using photoetching technique, photoresist setting is except the 4th groove and the
On region except five groove regions；
Using PVD technique in the N-type in the p type semiconductor layer and the second through-hole in photoresist, insulating layer, first through hole
Metal material is laid on semiconductor layer；
The metal material of photoresist and laying on a photoresist is removed, the metal material in the 4th groove forms p-type pad,
Metal material in 5th groove forms N-type pad.
Above-mentioned production method utilizes the photoetching process while shape for forming the second groove compared with production method shown in Fig. 2
It is placed in the 4th groove at the 4th groove and the 5th groove, and by p-type pad, N-type pad is placed in the 5th groove, can
Pad is being bonded and when bracket is expressed between two pads and leads to N-type pad and p-type pad to further avoid tin cream
Conducting.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of flip LED chips, the flip LED chips include substrate, n type semiconductor layer, active layer, p type semiconductor layer,
Reflective layer, insulating layer, P-type electrode, N-type electrode, N-type pad and p-type pad；The n type semiconductor layer, the active layer and institute
It states p type semiconductor layer to stack gradually on the first surface of the substrate, the p type semiconductor layer is equipped with and extends to the N
First groove of type semiconductor layer；The N-type electrode is arranged on the n type semiconductor layer in first groove, the p-type electricity
Pole be arranged on the p type semiconductor layer, the reflective layer the p type semiconductor layer except the P-type electrode region it
On outer region；The insulating layer is laid in first groove and on the reflective layer, and the insulating layer, which is equipped with, to be extended
The extremely first through hole of the P-type electrode and the second through-hole for extending to the N-type electrode；The N-type pad and the p-type pad
It is arranged at intervals on the insulating layer, the p-type pad extends to the P-type electrode, the N-type weldering by the first through hole
Disk extends to the N-type electrode by second through-hole；
It is characterized in that, insulating layer between the N-type pad and the p-type pad is equipped with the extended to the reflective layer
Two grooves, the depth of second groove is less than the thickness of the insulating layer, between second groove and the N-type pad
Distance is not equal to the distance between second groove and the p-type pad.
2. flip LED chips according to claim 1, which is characterized in that the p type semiconductor layer is equipped with and extends to institute
The third groove of n type semiconductor layer is stated, the projection of second groove on the first surface and the third groove are in institute
The projection stated on first surface is overlapped, and the depth of second groove is equal to the depth of the third groove.
3. flip LED chips according to claim 2, which is characterized in that the depth of the third groove is equal to described the
The depth of one groove.
4. flip LED chips according to claim 3, which is characterized in that the depth of second groove is 1 μm~2 μm.
5. according to the described in any item flip LED chips of claim 2~4, which is characterized in that second groove and the N
The distance between type pad is less than the distance between second groove and the p-type pad.
6. flip LED chips according to claim 5, which is characterized in that between second groove and the N-type pad
Distance be 5 μm~100 μm.
7. flip LED chips according to any one of claims 1 to 4, which is characterized in that the width of second groove is
10 μm~50 μm.
8. flip LED chips according to claim 1, which is characterized in that the insulating layer is equipped with to be led to described first
4th groove of hole connection and the 5th groove being connected to second through-hole；The p-type pad setting is recessed the described 4th
In slot, the thickness of the p-type pad is equal to the sum of depth and length of the first through hole of the 4th groove；The N-type
Pad is arranged in the 5th groove, and the thickness of the N-type pad is equal to the depth of the 5th groove and described second and leads to
The sum of the length in hole.
9. flip LED chips according to claim 8, which is characterized in that the depth of the 4th groove is equal to described the
The depth of two grooves, the depth of the 5th groove are equal to the depth of second groove.
10. a kind of production method of flip LED chips, which is characterized in that the production method includes:
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on the first surface of substrate；
The first groove for extending to the n type semiconductor layer is opened up on the p type semiconductor layer；
Reflective layer is formed on the p type semiconductor layer；
N-type electrode is set on the n type semiconductor layer in first groove, and in the p type semiconductor layer except described reflective
P-type electrode is set on region except layer region；
Insulating layer is formed in first groove and on the reflective layer, the insulating layer, which is equipped with, extends to the p-type electricity
The first through hole of pole, the second through-hole for extending to the N-type electrode and the second groove extended to the reflective layer, it is described
The depth of second groove is less than the thickness of the insulating layer, and second groove is located at the first through hole and second through-hole
Between, and the distance between second groove and the first through hole not equal to second groove and second through-hole it
Between distance；
Interval setting N-type pad and p-type pad, the p-type pad are extended to by the first through hole on the insulating layer
The P-type electrode, the N-type pad extend to the N-type electrode by second through-hole.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113659048A (en) * | 2021-07-22 | 2021-11-16 | 厦门三安光电有限公司 | Flip-chip light emitting diode and preparation method thereof |
| CN116437792A (en) * | 2023-05-06 | 2023-07-14 | 本源量子计算科技（合肥）股份有限公司 | Substrate, packaging structure, quantum chip and manufacturing method of quantum chip |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003046142A (en) * | 2001-08-01 | 2003-02-14 | Sanyo Electric Co Ltd | Light emitting device and support base used therefor |
| CN103178181A (en) * | 2011-12-26 | 2013-06-26 | 茂邦电子有限公司 | LED (light emitting diode) element with coplanar electrodes, packaging structure and light reflecting structure |
| CN104638090A (en) * | 2014-12-18 | 2015-05-20 | 上海大学 | Inverted LED (light emitting diode) encapsulation module |
| CN105244419A (en) * | 2014-06-18 | 2016-01-13 | 晶能光电（常州）有限公司 | Preparation method of wafer level thin-film flip LED chip |
| CN106449924A (en) * | 2016-08-30 | 2017-02-22 | 厦门乾照光电股份有限公司 | Photo-thermal-electric separated flip LED chip and manufacturing method thereof |
| US20170207161A1 (en) * | 2016-01-19 | 2017-07-20 | Siliconware Precision Industries Co., Ltd. | Substrate structure and method of manufacturing the same |
| CN107833960A (en) * | 2017-10-23 | 2018-03-23 | 山东晶泰星光电科技有限公司 | A kind of LED support and its manufacture method with overflow ducts and overflow launder |
| CN108123018A (en) * | 2017-12-18 | 2018-06-05 | 湘能华磊光电股份有限公司 | A kind of GaN-based flip-chip structure light-emitting device and preparation method thereof |
| CN207558821U (en) * | 2017-10-23 | 2018-06-29 | 山东晶泰星光电科技有限公司 | A kind of LED support with overflow ducts and overflow launder |
| CN108336207A (en) * | 2018-01-05 | 2018-07-27 | 佛山市国星半导体技术有限公司 | A kind of high reliability LED chip and preparation method thereof |
-
2018
- 2018-10-26 CN CN201811256110.9A patent/CN109638125B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003046142A (en) * | 2001-08-01 | 2003-02-14 | Sanyo Electric Co Ltd | Light emitting device and support base used therefor |
| CN103178181A (en) * | 2011-12-26 | 2013-06-26 | 茂邦电子有限公司 | LED (light emitting diode) element with coplanar electrodes, packaging structure and light reflecting structure |
| CN105244419A (en) * | 2014-06-18 | 2016-01-13 | 晶能光电（常州）有限公司 | Preparation method of wafer level thin-film flip LED chip |
| CN104638090A (en) * | 2014-12-18 | 2015-05-20 | 上海大学 | Inverted LED (light emitting diode) encapsulation module |
| US20170207161A1 (en) * | 2016-01-19 | 2017-07-20 | Siliconware Precision Industries Co., Ltd. | Substrate structure and method of manufacturing the same |
| CN106449924A (en) * | 2016-08-30 | 2017-02-22 | 厦门乾照光电股份有限公司 | Photo-thermal-electric separated flip LED chip and manufacturing method thereof |
| CN107833960A (en) * | 2017-10-23 | 2018-03-23 | 山东晶泰星光电科技有限公司 | A kind of LED support and its manufacture method with overflow ducts and overflow launder |
| CN207558821U (en) * | 2017-10-23 | 2018-06-29 | 山东晶泰星光电科技有限公司 | A kind of LED support with overflow ducts and overflow launder |
| CN108123018A (en) * | 2017-12-18 | 2018-06-05 | 湘能华磊光电股份有限公司 | A kind of GaN-based flip-chip structure light-emitting device and preparation method thereof |
| CN108336207A (en) * | 2018-01-05 | 2018-07-27 | 佛山市国星半导体技术有限公司 | A kind of high reliability LED chip and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113659048A (en) * | 2021-07-22 | 2021-11-16 | 厦门三安光电有限公司 | Flip-chip light emitting diode and preparation method thereof |
| CN113659048B (en) * | 2021-07-22 | 2023-10-20 | 厦门三安光电有限公司 | Flip-chip light emitting diode and preparation method thereof |
| CN116437792A (en) * | 2023-05-06 | 2023-07-14 | 本源量子计算科技（合肥）股份有限公司 | Substrate, packaging structure, quantum chip and manufacturing method of quantum chip |
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|---|---|
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