CN109582076A - Reference current source - Google Patents
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- CN109582076A CN109582076A CN201910019520.XA CN201910019520A CN109582076A CN 109582076 A CN109582076 A CN 109582076A CN 201910019520 A CN201910019520 A CN 201910019520A CN 109582076 A CN109582076 A CN 109582076A
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- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- General Physics & Mathematics (AREA)
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- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
This disclosure relates to a kind of reference current source, which includes: alternating temperature resistive module, and for providing the resistance varied with temperature, the first end of the alternating temperature resistive module is electrically connected to first voltage；The first transistor, the first end of the first transistor is electrically connected to second voltage, second end is electrically connected to the first voltage, third end is electrically connected to the second end of the alternating temperature resistive module, wherein, the first end of the first transistor is used for the resistance outputting reference electric current according to the alternating temperature resistive module.Reference current source described in the disclosure generates the resistance varied with temperature by alternating temperature resistive module, and the first transistor recycles the reference current of the resistance varied with temperature output zero-temperature coefficient.The reference current precision of the reference current source obtained by the disclosure, output is high, the operation is stable.
Description
Technical field
This disclosure relates to technical field of integrated circuits more particularly to a kind of reference current source.
Background technique
Reference current source refers to the high-precision that the current reference of other circuits is used as in Analogous Integrated Electronic Circuits, low temperature
Spend the current source of coefficient.Key Circuit unit of the current source as Analogous Integrated Electronic Circuits, is widely used in operational amplifier, A/D
In converter, D/A converter.
However, reference current source in the prior art, the usually output accuracy due to influence of the factors such as operating voltage, temperature
Low reference current, to directly influence the precision and stability of entire IC system.
Therefore, it is badly in need of the stable reference current source for proposing that a kind of precision is high, not influenced by operating voltage, temperature etc..
Summary of the invention
In view of this, the present disclosure proposes a kind of reference current source, the reference current source includes:
Alternating temperature resistive module, for providing the resistance varied with temperature, the first end electrical connection of the alternating temperature resistive module
In first voltage；
The first transistor, the first end of the first transistor are electrically connected to second voltage, and second end is electrically connected to described
First voltage, third end are electrically connected to the second end of the alternating temperature resistive module,
Wherein, the first end of the first transistor is used for the resistance outputting reference electricity according to the alternating temperature resistive module
Stream.
In one possible implementation, the reference current source further include:
Second transistor, the first end of the second transistor are electrically connected to the second voltage, and second end is electrically connected to
Third end；
Third transistor, the first end and second end of the third transistor are electrically connected to the second of the second transistor
End and third end, the third end of the third transistor are electrically connected to the first voltage；
Wherein, the alternating temperature resistive module includes the 4th transistor, and the first end of the 4th transistor is electrically connected to institute
The third end of the first transistor is stated, second end is electrically connected to the first end and second end of the third transistor, and third end is electrically connected
It is connected to the first voltage,
Wherein, the second voltage is greater than the first voltage.
In one possible implementation, the reference current source further include:
The first end of 5th transistor, the 5th transistor is electrically connected to the second voltage, and second end is electrically connected to
The first end of third end and the first transistor；
Wherein, the first end of the 5th transistor is for exporting the reference current；
Wherein, the first end of the first transistor is electrically connected to the second voltage by the 5th transistor.
In one possible implementation, the second end of the 4th transistor receives the first of the third transistor
The control voltage of output is held, the control voltage makes the 4th transistor work in linear zone, wherein brilliant the described 4th
When body pipe works in linear zone, the 4th transistor is the equivalent resistance with the control voltage change.
In one possible implementation, the control voltage is expressed as:
Wherein, VBIASTo control voltage,For the second transistor
Breadth length ratio,For the breadth length ratio of the third transistor, VTna1For the threshold voltage of the second transistor, VTn1It is described
The threshold voltage of third transistor, wherein it is described control voltage value variation with temperature and change.
In one possible implementation, the resistance value of the resistance of the alternating temperature resistive module indicates are as follows:
Wherein, R is the resistance value of the resistance, and μ is the mobility of the 4th transistor, COXn2For the 4th transistor
Unit area grid and channel between aoxidize layer capacitance,For the breadth length ratio of the 4th transistor, VBIASIt is described
Control voltage, VTn2For the threshold voltage of the 4th transistor.
In one possible implementation, the first transistor, the second transistor are depletion type NMOS crystal
Pipe, the third transistor, the 4th transistor are enhanced NMOS transistor.
In one possible implementation, reference ground of the first voltage as the reference current source, described the
Operating voltage of two voltages as the reference current source.
In one possible implementation, the alternating temperature resistive module includes:
First resistor, the first end of the first resistor are electrically connected to the third end of the first transistor；
Second resistance, the first end of the second resistance are electrically connected to the second end of the first resistor, and second end is electrically connected
It is connected to the first voltage.
In one possible implementation, the first resistor is positive temperature coefficient resistor, and the second resistance is negative
Temperature coefficient of resistance.
Reference current source described in the disclosure generates the resistance varied with temperature, first crystal by alternating temperature resistive module
Pipe recycles the reference current of the resistance varied with temperature output zero-temperature coefficient.The reference current obtained by the disclosure
The reference current precision in source, output is high, the operation is stable.
According to below with reference to the accompanying drawings to detailed description of illustrative embodiments, the other feature and aspect of the disclosure will become
It is clear.
Detailed description of the invention
Comprising in the description and constituting the attached drawing of part of specification and specification together illustrates the disclosure
Exemplary embodiment, feature and aspect, and for explaining the principles of this disclosure.
Fig. 1 shows the schematic diagram of the reference current source according to one embodiment of the disclosure.
Fig. 2 shows the schematic diagrames according to the reference current source of the disclosure one embodiment.
Fig. 3 shows the schematic diagram of the reference current source according to one embodiment of the disclosure.
Specific embodiment
Various exemplary embodiments, feature and the aspect of the disclosure are described in detail below with reference to attached drawing.It is identical in attached drawing
Appended drawing reference indicate element functionally identical or similar.Although the various aspects of embodiment are shown in the attached drawings, remove
It non-specifically points out, it is not necessary to attached drawing drawn to scale.
Dedicated word " exemplary " means " being used as example, embodiment or illustrative " herein.Here as " exemplary "
Illustrated any embodiment should not necessarily be construed as preferred or advantageous over other embodiments.
In addition, giving numerous details in specific embodiment below to better illustrate the disclosure.
It will be appreciated by those skilled in the art that without certain details, the disclosure equally be can be implemented.In some instances, for
Method, means, element and circuit well known to those skilled in the art are not described in detail, in order to highlight the purport of the disclosure.
Referring to Fig. 1, Fig. 1 shows the schematic diagram of the reference current source according to one embodiment of the disclosure.
If shown in 1, the current source includes:
Alternating temperature resistive module 10, for providing the resistance varied with temperature, the first end electricity of the alternating temperature resistive module 10
It is connected to first voltage V1；
The first transistor Q1, the first transistor Q1First end be electrically connected to second voltage V2, second end is electrically connected to
The first voltage V1, third end is electrically connected to the second end of the alternating temperature resistive module 10, wherein the first transistor Q1
First end be used for according to the resistance outputting reference electric current I of the alternating temperature resistive module 10REF。
Reference current source described in the disclosure generates the resistance varied with temperature, first crystal by alternating temperature resistive module
Pipe recycles the reference current of the resistance varied with temperature output zero-temperature coefficient.The reference current obtained by the disclosure
The reference current precision in source, output is high, the operation is stable.
Referring to Fig. 2, Fig. 2 shows the schematic diagrames according to the reference current source of the disclosure one embodiment.
As shown in Fig. 2, the current source further include:
Second transistor Q2, the second transistor Q2First end be electrically connected to the second voltage V2, second end is electrically connected
It is connected to third end；
Third transistor Q3, the third transistor Q3First end and second end be electrically connected to the second transistor Q2
Second end and third end, the third end of the third transistor be electrically connected to the first voltage V1。
In a kind of possible embodiment, the alternating temperature resistive module 10 may include the 4th transistor Q4, described
Four transistor Q4First end be electrically connected to the first transistor Q1Third end, second end is electrically connected to the third crystal
Pipe Q3First end and second end, third end is electrically connected to the first voltage V1, wherein the 4th transistor Q4Third end can
Using the first end as alternating temperature resistive module 10, the 4th transistor Q4First end can be used as the second of alternating temperature resistive module 10
End, alternating temperature resistive module 10 can also include third end, such as can be the 4th transistor Q4Second end.
In a kind of possible embodiment, the second voltage V2Greater than the first voltage V1, wherein described first
Voltage V1Reference ground V as the reference current sourceSS, the second voltage V2It can be used as the work of the reference current source
Voltage (such as VDD).It should be noted that first voltage V1And second voltage V2Voltage value may be set according to actual conditions,
The disclosure is without limitation.
In a kind of possible embodiment, as shown in Fig. 2, the reference current source may also include that
5th transistor Q5, the 5th transistor Q5First end be electrically connected to the second voltage V2, second end is electrically connected
It is connected to third end and the first transistor Q1First end；
Wherein, the 5th transistor Q5First end for exporting the reference current IREF；
Wherein, the first transistor Q1First end pass through the 5th transistor Q5It is electrically connected to the second voltage
V2。
In a kind of possible embodiment, the first transistor Q1, the second transistor Q2It is brilliant for depletion type NMOS
Body pipe, the third transistor, the 4th transistor are enhanced NMOS transistor, the 5th transistor Q5For enhanced PMOS
Transistor.
Wherein, metal-oxide-semiconductor is that metal (metal)-oxide (oxide)-semiconductor (semiconductor) field-effect is brilliant
Body pipe or metal-insulator (insulator)-semiconductor field effect transistor.The source electrode and drain electrode of metal-oxide-semiconductor is can
With what is exchanged, in most cases, this area Liang Ge be it is the same, the performance of device will not be influenced both ends are exchanged.Its
In, NMOS tube (N-Metal-Oxide-Semiconductor) is mainly by electronic conduction, PMOS tube (P-Metal-Oxide-
Semiconductor) mainly by hole conduction.
Wherein, depletion mode transistor can change the impurity concentration for being doped to channel in the fabrication process, so that this
Even if the grid of MOSFET still has without making alive, channel.If it is intended to closing passage, then must apply negative electricity in grid
Pressure.
In a kind of possible embodiment, the first transistor Q1First end, second end and third end be respectively
The first transistor Q1Drain electrode, grid and source electrode.
In a kind of possible embodiment, the second transistor Q2First end, second end and third end be respectively
The second transistor Q2Drain electrode, grid and source electrode.
In a kind of possible embodiment, the third transistor Q3First end, second end and third end be respectively
The third transistor Q3Drain electrode, grid and source electrode.
In a kind of possible embodiment, the 4th transistor Q4First end, second end and third end be respectively
The 4th transistor Q4Drain electrode, grid and source electrode.
In a kind of possible embodiment, the 5th transistor Q5First end, second end and third end be respectively
The 5th crystal Q5Source electrode, grid and the drain electrode of pipe.
In a kind of possible embodiment, second transistor Q2And third transistor Q3It can be used for controlling the 4th crystal
Pipe Q4Working condition.
In the present embodiment, the 4th transistor Q4Second end receive the third transistor Q3First end it is defeated
Control voltage V outBIAS, the control voltage VBIASSo that the 4th transistor Q4Work in linear zone, wherein described
4th transistor Q4When working in linear zone, the 4th crystal Q4Pipe is with the control voltage VBIASThe equivalent resistance of variation.
In a kind of possible embodiment, the control voltage V can be obtained in the following wayBIAS:
Firstly, since flowing through second transistor Q2And third transistor Q3Electric current I1It is equal, available electric current I1Such as
Under:
Wherein, μna1
For second transistor Q2Mobility, COXna1For second transistor Q2Unit area grid and channel between oxide layer electricity
Hold,For the breadth length ratio of the second transistor, VGSna1For second transistor Q2Voltage between grid and source electrode, VTna1
For second transistor Q2Threshold voltage, μn1For third transistor Q3Mobility, COXn1For third transistor Q3Unit area
Grid and channel between aoxidize layer capacitance,For the breadth length ratio of the third transistor, VGSn1For third transistor Q3's
Voltage between grid and source electrode, VTn1For third transistor Q3Threshold voltage, wherein source electrode and drain directions in transistor
The sizes of grid be known as length L, the size of the grid in direction normal thereto is known as width W.
Secondly as VGSna1=0, VGS=VBIAS, and second transistor Q2Threshold voltage VTna1It is negative, according to electric current
I1The available control voltage V of formulaBIASAre as follows:
Wherein, threshold voltage VTn1It is negative temperature coefficient, | VTna1| it is threshold value
Voltage VTna1Absolute value.
As it can be seen that by changing second transistor Q2And third transistor Q3Breadth length ratio the control varied with temperature can be obtained
Voltage processed.
It is to be understood that second transistor Q2And third transistor Q3Breadth length ratio can select according to actual needs, this
Disclosure is without limitation.
It is to be understood that in the present embodiment, second transistor Q2And third transistor Q3It can be used as control voltage
VBIASGeneration circuit be set to except alternating temperature resistive module 10, in other embodiments, second transistor Q2And third crystal
Pipe Q3Also it can be set in alternating temperature resistive module 10, the disclosure is with no restrictions.
In the 4th transistor Q4When steady operation, the 4th transistor Q4Linear zone is worked in, as the 4th transistor Q4It works in
When linear zone, the 4th transistor Q4An equivalent resistance can be considered as, that is, the alternating temperature resistive module 10 provide with temperature
Spend the resistance of variation.
In a kind of possible embodiment, the resistance value of the resistance of the alternating temperature resistive module 10 is indicated are as follows:
Wherein, R is the resistance value of the resistance, μn2For the 4th transistor
Q4Mobility, COXn2For the 4th transistor Q4Unit area grid and channel between aoxidize layer capacitance,For
The 4th transistor Q4Breadth length ratio, VBIASFor the control voltage, VTn2For the 4th transistor Q4Threshold voltage.
In above-mentioned formula, due to the 4th transistor Q4Mobility [mu]n2And threshold voltage VTn2The trend varied with temperature
It is fixed, so, by controlling voltage VBIAS, available by control voltage VBIASControl varies with temperature adjustable electricity
Resistance.
In a kind of possible embodiment, the reference current I of reference current source outputREFFor the benchmark of zero-temperature coefficient
Electric current, the reference current are as follows:
Wherein, IREFFor the value of the reference current, μna2For the first transistor Q1Mobility, COXna2It is described
One transistor Q1Unit area grid and channel between aoxidize layer capacitance, VTna2For the first transistor Q1Threshold value electricity
Pressure.
In above-mentioned formula, due to the first transistor Q1Mobility [mu]na2And threshold voltage VTna2The trend varied with temperature
It is fixed, so, the trend varied with temperature by controlling resistance R can be to mobility [mu]na2And threshold voltage VTna2Variation
It compensates, it is hereby achieved that the reference current of zero-temperature coefficient.Meanwhile from reference current IREFFormula it is recognised that base
Quasi- electric current IREFWith first voltage V1And/or second voltage V2It is unrelated, it will not be with first voltage V1And/or second voltage V2Variation
And change, therefore, reference current IREF has stable characteristic.
It is derived according to above it is found that by the selection suitable second transistor Q of breadth length ratio2And third transistor Q3It can obtain
To the control voltage V varied with temperatureBIAS, select the suitable 4th transistor Q of breadth length ratio4, according to control voltage VBIASIt can be with
It obtains varying with temperature adjustable resistance R, selects the suitable the first transistor Q of breadth length ratio1, according to resistance R available zero
The reference current V of temperature coefficientREF.The reference current precision obtained in the above manner is high, not by the shadow of operating voltage, temperature
It rings, it is relatively stable.
Referring to Fig. 3, Fig. 3 shows the schematic diagram of the reference current source according to one embodiment of the disclosure.
As shown in figure 3, the alternating temperature resistive module 10 can also include:
First resistor 101, the first end of the first resistor 101 are electrically connected to the first transistor Q1Third end；
Second resistance 102, the first end of the second resistance 102 are electrically connected to the second end of the first resistor, and second
End is electrically connected to the first voltage V1。
In a kind of possible embodiment, the first resistor 101 is positive temperature coefficient resistor, the second resistance
102 be negative temperature coefficient resister.
In the present embodiment, the first end of first resistor 101 can be used as the second end of alternating temperature resistive module 10, and second
The second end of resistance 102 can be used as the first end of alternating temperature resistive module 10.
It can be obtained by the first resistor 101 with positive temperature coefficient and the second resistance 102 with negative temperature real number
Resistance (the first resistor 101 varied with temperature that one equivalent resistance varied with temperature namely alternating temperature resistive module 10 provide
And the series connection of second resistance 102), which can be used for compensating the first transistor Q1Mobility and temperature coefficient with temperature
Variation, the first transistor Q1According to the available reference current I of equivalent resistance RREF:
Wherein, R is the resistance varied with temperature, VGSna2For the first transistor Q1Voltage between grid and source electrode, from base
Quasi- electric current IREFFormula can be seen that the first transistor Q by selecting suitable breadth length ratio1, so that it may obtain zero-temperature coefficient
Reference current IREF。
It is to be understood that in the present embodiment, the resistance of alternating temperature resistive module 10 is by first resistor 101 and the
The series connection of two resistance 102 is formed, and in other embodiments, alternating temperature resistive module 10 may include the different resistance net of number
Network, which can be series network, parallel network or their combination and other forms, as long as changing resistance net
The equivalent resistance varied with temperature may be implemented in network, and the disclosure is without limitation.
The presently disclosed embodiments is described above, above description is exemplary, and non-exclusive, and
It is not limited to disclosed each embodiment.Without departing from the scope and spirit of illustrated each embodiment, for this skill
Many modifications and changes are obvious for the those of ordinary skill in art field.The selection of term used herein, purport
In the principle, practical application or technological improvement to the technology in market for best explaining each embodiment, or lead this technology
Other those of ordinary skill in domain can understand each embodiment disclosed herein.
Claims (10)
1. a kind of reference current source, which is characterized in that the reference current source includes:
Alternating temperature resistive module, for providing the resistance varied with temperature, the first end of the alternating temperature resistive module is electrically connected to
One voltage；
The first transistor, the first end of the first transistor are electrically connected to second voltage, and second end is electrically connected to described first
Voltage, third end are electrically connected to the second end of the alternating temperature resistive module,
Wherein, the first end of the first transistor is used for the resistance outputting reference electric current according to the alternating temperature resistive module.
2. reference current source according to claim 1, which is characterized in that the reference current source further include:
Second transistor, the first end of the second transistor are electrically connected to the second voltage, and second end is electrically connected to third
End；
Third transistor, the first end and second end of the third transistor be electrically connected to the second transistor second end and
The third end at third end, the third transistor is electrically connected to the first voltage；
Wherein, the alternating temperature resistive module includes the 4th transistor, and the first end of the 4th transistor is electrically connected to described the
The third end of one transistor, second end are electrically connected to the first end and second end of the third transistor, and third end is electrically connected to
The first voltage,
Wherein, the second voltage is greater than the first voltage.
3. reference current source according to claim 2, which is characterized in that the reference current source further include:
The first end of 5th transistor, the 5th transistor is electrically connected to the second voltage, and second end is electrically connected to third
The first end of end and the first transistor；
Wherein, the first end of the 5th transistor is for exporting the reference current；
Wherein, the first end of the first transistor is electrically connected to the second voltage by the 5th transistor.
4. reference current source according to claim 2, which is characterized in that described in the second end of the 4th transistor receives
The control voltage of the first end output of third transistor, the control voltage make the 4th transistor work in linear zone,
Wherein, when the 4th transistor works in linear zone, the 4th transistor is with the equivalent of the control voltage change
Resistance.
5. reference current source according to claim 4, which is characterized in that the control voltage is expressed as:
Wherein, VBIASTo control voltage,It is long for the width of the second transistor
Than,For the breadth length ratio of the third transistor, VTna1For the threshold voltage of the second transistor, VTn1For the third
The threshold voltage of transistor, wherein it is described control voltage value variation with temperature and change.
6. reference current source according to claim 4, which is characterized in that the resistance value table of the resistance of the alternating temperature resistive module
It is shown as:
Wherein, R is the resistance value of the resistance, and μ is the mobility of the 4th transistor, COXn2For the list of the 4th transistor
Layer capacitance is aoxidized between the grid and channel of plane product,For the breadth length ratio of the 4th transistor, VBIASFor the control
Voltage, VTn2For the threshold voltage of the 4th transistor.
7. reference current source according to claim 2, which is characterized in that the first transistor, the second transistor
For depletion type nmos transistor, the third transistor, the 4th transistor are enhanced NMOS transistor.
8. reference current source according to claim 1, which is characterized in that the first voltage is as the reference current source
Reference ground, operating voltage of the second voltage as the reference current source.
9. reference current source according to claim 1, which is characterized in that the alternating temperature resistive module includes:
First resistor, the first end of the first resistor are electrically connected to the third end of the first transistor；
Second resistance, the first end of the second resistance are electrically connected to the second end of the first resistor, and second end is electrically connected to
The first voltage.
10. reference current source according to claim 9, which is characterized in that the first resistor is positive temperature coefficient resistor,
The second resistance is negative temperature coefficient resister.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3793522A (en) * | 1970-09-30 | 1974-02-19 | Philips Corp | Temperature compensating circuits for photo-conductive cells |
| US5146152A (en) * | 1991-06-12 | 1992-09-08 | Samsung Electronics Co., Ltd. | Circuit for generating internal supply voltage |
| US5315230A (en) * | 1992-09-03 | 1994-05-24 | United Memories, Inc. | Temperature compensated voltage reference for low and wide voltage ranges |
| CN1428675A (en) * | 2001-12-28 | 2003-07-09 | 旺宏电子股份有限公司 | Voltage reference source provided circuit |
| US20080001648A1 (en) * | 2006-07-03 | 2008-01-03 | Tser-Yu Lin | Device having temperature compensation for providing constant current through utilizing compensating unit with positive temperature coefficient |
| CN101609346A (en) * | 2008-06-17 | 2009-12-23 | 瑞鼎科技股份有限公司 | Current source circuit |
| US20100201406A1 (en) * | 2009-02-10 | 2010-08-12 | Illegems Paul F | Temperature and Supply Independent CMOS Current Source |
| US20100259315A1 (en) * | 2009-04-08 | 2010-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and Methods for Temperature Insensitive Current Reference |
| JP2011091759A (en) * | 2009-10-26 | 2011-05-06 | Seiko Epson Corp | Current source, amplifier circuit, electronic circuit, integrated circuit device and electronic apparatus |
| CN104135277A (en) * | 2014-07-25 | 2014-11-05 | 深圳大学 | An on-chip reference clock generation circuit and method thereof |
| CN105824348A (en) * | 2016-05-12 | 2016-08-03 | 中国电子科技集团公司第二十四研究所 | Reference-voltage circuit |
| CN108664071A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | A kind of low-power consumption temperature compensated current source circuit for electronic tag |
| CN108664070A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | Low-power consumption temperature compensated current source circuit |
-
2019
- 2019-01-09 CN CN201910019520.XA patent/CN109582076B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3793522A (en) * | 1970-09-30 | 1974-02-19 | Philips Corp | Temperature compensating circuits for photo-conductive cells |
| US5146152A (en) * | 1991-06-12 | 1992-09-08 | Samsung Electronics Co., Ltd. | Circuit for generating internal supply voltage |
| US5315230A (en) * | 1992-09-03 | 1994-05-24 | United Memories, Inc. | Temperature compensated voltage reference for low and wide voltage ranges |
| CN1428675A (en) * | 2001-12-28 | 2003-07-09 | 旺宏电子股份有限公司 | Voltage reference source provided circuit |
| US20080001648A1 (en) * | 2006-07-03 | 2008-01-03 | Tser-Yu Lin | Device having temperature compensation for providing constant current through utilizing compensating unit with positive temperature coefficient |
| CN101609346A (en) * | 2008-06-17 | 2009-12-23 | 瑞鼎科技股份有限公司 | Current source circuit |
| US20100201406A1 (en) * | 2009-02-10 | 2010-08-12 | Illegems Paul F | Temperature and Supply Independent CMOS Current Source |
| US20100259315A1 (en) * | 2009-04-08 | 2010-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and Methods for Temperature Insensitive Current Reference |
| JP2011091759A (en) * | 2009-10-26 | 2011-05-06 | Seiko Epson Corp | Current source, amplifier circuit, electronic circuit, integrated circuit device and electronic apparatus |
| CN104135277A (en) * | 2014-07-25 | 2014-11-05 | 深圳大学 | An on-chip reference clock generation circuit and method thereof |
| CN105824348A (en) * | 2016-05-12 | 2016-08-03 | 中国电子科技集团公司第二十四研究所 | Reference-voltage circuit |
| CN108664071A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | A kind of low-power consumption temperature compensated current source circuit for electronic tag |
| CN108664070A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | Low-power consumption temperature compensated current source circuit |
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