CN109560071A - 设于目标电路基板的预导电阵列、及其导电结构阵列 - Google Patents
设于目标电路基板的预导电阵列、及其导电结构阵列 Download PDFInfo
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- CN109560071A CN109560071A CN201810894920.0A CN201810894920A CN109560071A CN 109560071 A CN109560071 A CN 109560071A CN 201810894920 A CN201810894920 A CN 201810894920A CN 109560071 A CN109560071 A CN 109560071A
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Abstract
本申请公开设于目标电路基板的预导电阵列、及其导电结构阵列。设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多组导电电极群;以及,设于全部或部分的该导电电极群的各该导电电极上的至少一导电粒子。其中,该至少一导电粒子、及其相对应的该导电电极,构成一预导电构造;该预导电构造构成一预导电阵列。
Description
技术领域
本发明是关于一种目标电路基板,特别是关于一种形成预导电阵列的目标电路基板。
背景技术
传统在一目标电路基板上建立导电结构的方式包括:预熔导电垫片、锡膏印刷(Solder Paste Printing)、或进一步搭配球格阵列(Ball Grid Array,BGA)等表面粘着技术(Surface Mounting Technology,SMT)制造过程;然而,该表面粘着制造过程的技术精度,无法应用于尺寸低于100微米的微电子器件,属于技术精度上的不匹配。
或,于目标电路基板上涂覆异方性导电膏(Anisotropic Conductive Paste,ACP)。传统的异方性导电膏,为了适配目标电路基板上,导电垫片与导电垫片之间的不同距离,或为了适配具有不同尺度(scale)导电垫片的目标电路基板,通常采用较高粒子填充率的异方性导电膏,导电粒子在涂覆膏(热固膏或热塑膏)内部呈三维分布,以对导电垫片最高机率地起到导电作用。然而,仅存在有少部分的导电粒子能在目标电路基板上对导电垫片起到导电作用,其余占多数的导电粒子则随涂覆膏的固化而被一并封存于目标电路基板。鉴于导电粒子的成本远远高过于涂覆膏,故传统异方性导电膏的使用,属于成本上的极大浪费;尽管可以选择较低粒子填充率的异方性导电膏,仍未能免除大多数导电粒子被浪费的情况,而无法有效降低成本。此外,异方性导电膏的涂覆,在各个厂商技术精度不尽相同的情况下,涂覆膏的厚薄不一、导电粒子的分布均度亦受影响。
发明内容
有鉴于此,本发明在提供一种设于目标电路基板的预导电阵列、以及目标电路基板的导电结构;不囿于欲定位至目标电路基板的电子元件的元件尺寸,而能被广泛地应用。
有鉴于此,本发明可有效对目标电路基板设有预导电阵列及其导电结构。
为此,本发明提出一种设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多组导电电极群;两两导电电极群之间定义一第一间距;各该导电电极群具有至少一对导电电极;以及,设于全部或部分的该导电电极群的各该导电电极上的至少一导电粒子。其中,该至少一导电粒子、及其相对应的该导电电极,构成一预导电构造;该预导电构造构成一预导电阵列;其中,各该预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
为此,本发明提出一种设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多组导电电极群;两两导电电极群之间定义一第一间距;各该导电电极群具有一导电电极;以及,设于全部或部分的该导电电极群的各该导电电极上的至少一导电粒子。其中,该至少一导电粒子、及其相对应的该导电电极,构成一预导电构造;该预导电构造构成一预导电阵列;其中,各该预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
为此,本发明提出一种设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多个预导电构造;各该预导电构造包括:设于一目标电路基板上、且呈第一数量的多组导电电极群,各组导电电极群包括呈第二数量的至少一对导电电极;以及,定位于全部或部分的该导电电极群的各该导电电极上,且呈第三数量的至少一导电粒子。其中,各该预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
为此,本发明提出一种设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多个预导电构造;各该预导电构造包括:设于一目标电路基板上、且呈第一数量的多组导电电极群,各组导电电极群包括呈第二数量的至少一导电电极;以及,定位于全部或部分的该导电电极群的各该导电电极上,且呈第三数量的至少一导电粒子。其中,各该预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
为此,本发明提出一种设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多个预导电构造;各该预导电构造包括:设于一目标电路基板上、且按一第一图形阵列散布的多组导电电极群,各组导电电极群包括按一第二图形阵列散布的至少一对导电电极;以及,定位于全部或部分的该导电电极群的各该导电电极上,且按一第三图形阵列散布的至少一导电粒子。其中,各该预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
为此,本发明提出一种设于目标电路基板的预导电阵列,包括:设于一目标电路基板的多个预导电构造;各该预导电构造包括:设于一目标电路基板上、且按一第一图形阵列散布的多组导电电极群,各组导电电极群包括按一第二图形阵列散布的至少一导电电极;以及,定位于全部或部分的该导电电极群的各该导电电极上,且按一第三图形阵列散布的至少一导电粒子。其中,各该预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
为此,本发明提出一种目标电路基板的导电结构阵列,包括:应用于一目标电路基板的预导电阵列、以及阵列式微半导体结构;阵列式微半导体结构对应目标电路基板的预导电阵列的部分或全部。其中,各该微半导体结构具有一对电极;各该微半导体结构的各该电极、与所对应的该目标电路基板的该预导电构造,共同形成一导电结构。其中,各该导电结构定义有单位面积的导电粒子数的一第一密度,两两导电结构之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
本发明提出一种目标电路基板的导电结构阵列,包括:应用于一目标电路基板的预导电阵列、以及阵列式微半导体结构;阵列式微半导体结构对应目标电路基板的预导电阵列的部分或全部。其中,各该微半导体结构具有一电极;各该微半导体结构的该电极、与所对应的该目标电路基板的该预导电构造,共同形成一导电结构。其中,各该导电结构定义有单位面积的导电粒子数的一第一密度,两两导电结构之间定义有单位面积的导电粒子数的一第二密度,该第一密度大于该第二密度。
附图说明
图1为本发明的第一实施例,是设于目标电路基板的预导电阵列的流程图;
图2、2A为图1的目标电路基板的结构示意图;
图3、3A至3F为图2A中,不同预导电构造的结构示意图;
图2B为图1的不同目标电路基板与预导电构造的另一结构示意图;
图4为本发明的第一实施例中,是设于目标电路基板的导电结构,对应图2、2A的制造过程示意图;
图5A为本发明的第一实施例中,是设于目标电路基板的导电结构,对应图2、2A的结构示意图;
图5B为本发明的第一实施例中,是设于目标电路基板的导电结构的另一结构方式,对应图2B的结构示意图;
图5C为本发明的第一实施例,于目标电路基板形成导电结构的又一结构方式,对应图3C的结构示意图;
图6A至6E、图7A、7B、7C、8A为本发明的第二实施例,设于目标电路基板的预导电阵列制造过程示意图;
图9A至9C为本发明的第三实施例,是设于目标电路基板的预导电阵列的制造过程示意图;
图10A为本发明的第四实施例,是设于目标电路基板的预导电阵列的制造过程示意图;
图11A至11C为本发明的第五实施例,是设于目标电路基板的预导电阵列的制造过程示意图;
图12A与12B为本发明的第六实施例,是设于目标电路基板的预导电阵列的制造过程示意图;
图13、图14A与14B为本发明的第七实施例,是设于目标电路基板的预导电阵列的制造过程示意图;以及
图15为本发明的第八实施例,是设于目标电路基板的预导电阵列的制造过程示意图。
具体实施方式
如本文中所使用的“目标电路基板”指用于接收电子元件的非原生基板,电子元件是不受限其尺寸元件,可广泛地包括尺寸低于100微米的微电子器件或元件。原生基板或非原生基板的材料的实施例包含聚合物、塑胶、树脂、聚酰亚胺、聚萘二甲酸乙二酯、聚对苯二甲酸伸乙基酯、金属、金属箔、玻璃、石英、可挠性玻璃、半导体、蓝宝石、或薄膜晶体管(thinfilm transistor,TFT)等。
为便于理解与说明,本文所使用“目标电路基板”以薄膜晶体管为例。
[第一实施例]
图1、图2、图2A、图3、图3A至3F所示者,为本发明的对目标电路基板形成预导电阵列的方法,其主要概念的流程图及其制造过程示意图。
如图1所示,本发明用于对目标电路基板形成预导电阵列的方法至少包括步骤S10、与步骤S20。
步骤S10:如图2,置备一目标电路基板10。目标电路基板10具有一板体12、设于该板体12的多组导电电极群14、各该导电电极群14具有多对导电电极142,各对导电电极142包括二导电电极144。
板体12由沿X轴、Y轴所构成的一第一假想面延伸而成,并沿X轴定义一第一间距L1于两两导电电极群14之间、沿X轴定义一第二间距L2于相邻两对导电电极142的间、沿X轴定义一第三间距L3于各对的两导电电极144之间,以此类推;同理,板体12沿Y轴,应亦能定义出对应的间距;例如:沿Y轴定义一第一间距L1’于两两导电电极群14之间、沿Y轴定义一第二间距L2’于相邻两对导电电极142之间。而,各对的两导电电极144之间合理推论应维持由X定义的第三间距L3,以此类推。
同理,导电电极群14与导电电极群14之间,不论于X轴或Y轴,均可定义至少一第一间距;同理,一对导电电极142与另一对导电电极142之间,不论于X轴或Y轴,均可定义至少一第二间距。或,导电电极群14与导电电极群14之间,不论于X轴或Y轴,均可定义一第一主要间距、与至少一第一次要间距;同理,一对导电电极142与另一对导电电极142之间,不论于X轴或Y轴,均可定义一第二主要间距、与至少一第二次要间距。藉此,导电电极群14与导电电极群14之间形成一第一图形阵列,一对导电电极142与另一对导电电极142之间形成第二图形阵列。
此外,导电电极群14与导电电极群14,可呈比邻、也可呈对称;同理,一对导电电极142与另一对导电电极142之间,可呈比邻、也可呈对称。第2A图中,则同时采用比邻与对称的布设方式。
此外,本实施例中,各对导电电极的定义用以配合对应具有水平式或覆晶式电极的电子元件;假若对应具有垂直式电极的电子元件,则导电电极非必要成对出现,则定义各该导电电极群具有至少一导电电极,此进一步于图2B说明。
步骤S20:如图2A、3A,于全部或部分的该导电电极群14的各该导电电极144上,布置至少一导电粒子20;其中,该至少一导电粒子20、及其相对应的导电电极144,构成一预导电构造30;此预导电构造30形成朝一Z轴方向的一预导电路径PD。各该预导电构造30定义有单位面积的导电粒子数的一第一密度,两两预导电构造30之间定义有单位面积的导电粒子数的一第二密度,第一密度大于第二密度;本实施例中,则采第一密度远远大于第二密度的方案:两两预导电构造30之间,不具有导电粒子20。该预导电构造30按前述的第一间距L1、L1’、第二间距L2、L2’、第三间距L3的规则,以此类推,构成一预导电阵列;且通常,但不受限:第三间距L3小于第二间距L2、L2’、而第二间距L2、L2’小于第一间距L1、L1’。
本实施例中,第三间距L3小于100微米(μm),表示本实施例适用具水平式或覆晶式电极的电子元件,且其尺寸约在100微米以下。
此外,导电粒子20的粒径,是根据现有条件实施;而对应到本实施例中小于100微米的第三间距L3,导电粒子20的粒径可达个位数的微米级,例如:未达10微米。
其中,各该导电粒子20具有一内核、与包覆该内核的至少一导电层;或更进一步包覆该至少一导电层的一绝缘层。
关于预导电构造:
参阅图3A至3F,是对预导电构造的导电粒子进一步为具体说明者。
如图3A、3B、3C,布设于所对应的导电电极144的导电粒子,呈一簇布设的导电粒子20a,亦即,呈多个导电粒子20a。该导电粒子20a、20b、20c的区别,在于:图3A的多个分散的导电粒子20a主要沿X轴、Y轴所构成的第一假想面分布;图3B的多个紧密相接的导电粒子20b则进一步沿X轴、Z轴所构成的一第二假想面分布;图3C的多个紧密相接的导电粒子20c沿X轴、Z轴所构成的第二假想面分布。
如图3D、3E、3F,布设于所对应的导电电极144的导电粒子,呈多个簇布设的导电粒子20d,亦即,各簇呈多个导电粒子20d。该导电粒子20d、20e、20f的区别,在于:图3D的各簇独立的导电粒子20d主要沿X轴、Z轴所构成的第二假想面分布;图3E的各簇导电粒子20e沿X轴、Z轴所构成的第二假想面分布,并进一步沿X轴、Y轴、所构成的第一假想面接触;图3F的各簇独立的导电粒子20f主要沿X轴、Y轴所构成的第一假想面分布。
不论所布设的导电粒子的排列属无序或有序,均对应导电电极,并对导电电极形成有沿Z轴的至少一预导电路径PD;并由于导电粒子仅布设于所对应的导电电极上,使得第一密度大于第二密度;本实施例中,则采第一密度远远大于第二密度的方案:两两预导电构造之间,不具有导电粒子。
关于导电电极:
参阅图2B,是对配合垂直式电极电子元件的导电电极进一步为具体说明者。
目标电路基板10a具有一板体12a、设于该板体12a的多组导电电极群14a;由于导电电极144a非成对出现,则定义各该导电电极群14具有一导电电极144a。至少一导电粒子20设于各个导电电极144a上。
其中,板体12a由沿X轴、Y轴所构成的第一假想面延伸而成,并沿X轴定义一第一间距L11于两两导电电极群14a之间、沿X轴定义一第二主要间距L21于相邻两导电电极144a之间、或进一步沿X轴定义一第二次要间距L22于相邻两导电电极144a之间,且第二主要间距L22可相同或相异于第二次要间距L21。
同理,或更进一步沿X轴更进一步定义至少一个第二再次要间距。
同理,沿Y轴,定义出对应但不限于与X轴第一间距L11等长的一第一间距L11’、对应但不限于与X轴第二主要间距L21等长的一第二主要间距L21’、对应但不限于与X轴第二次要间距L22等长的一第二次要间距L22’。换句话说,沿Y轴可定义亦可多个次要间距。
因此,图2、2A,该导电电极群14、及其导电电极群导电电极144,亦能沿X、Y轴更进一步定义至少一个次要间距。
[第二实施例]
请参阅图6A至6E、图7A、7B、7C、8A的第二实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第一实施例相同的标号。
步骤S10的步骤中或前或后,更包括:如图6A,提供一钢板60,并投料多个导电粒子20;钢板60具有一板体62、以及于板体62预设有多组容槽单元64,各组容槽单元64具有多个容槽642。本实施例中,各个容槽642呈凹槽。
如图6B,钢板60携载多个导电粒子20;其中,全部或部分的各组容槽单元64中,全部或部分的容槽642携载该至少一导电粒子20。钢板60定义有一最外表面621,至少之一的导电粒子20,显露于钢板60的最外表面621。
如图6C,提供一携载装置70,粘取钢板60携载的导电粒子20。本实施例中,携载装置70为由一高分子有机硅化合物材料所制成而具有黏性;特别是一种聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)材料所制成,因此可对显露于钢板60的导电粒子20进行粘取。
如图6D,由携载装置70移转导电粒子20;并如图6E,将导电粒子20定位至目标电路基板10后,移除携载装置70。本实施例中,携载装置70可由具有等效结构的装置取代。例如:静电吸取、负(气)压吸取、夹持携载、或亦采粘取携载的粘贴滚轮、或粘贴板搭配粘贴滚轮的组合者;所谓吸取、粘取等均为携载的一种,且以上示例,均说明携载装置不局限所采用的技术方案,而以最终能携载导电粒子20的技术效果为目的。
同理,钢板60亦可由具有等效结构所取代,而能使导电粒子依预定规律排列成阵列者。
关于预胶:
参阅图7A、7B、7C、8A是对图6D、6E进一步为具体说明者。
如图7A,预胶是指对目标电路基板10铺设有至少一接触层80;本实施例中,铺设有一第一接触层82;使携载装置70近接目标电路基板10上的第一接触层82。
如图7B,由携载装置70移转导电粒子20,将导电粒子20定位至目标电路基板10的第一接触层82上,再移除携载装置70。本实施例中,第一接触层82对该导电粒子20提供定位的效果。
如图7C,可再进一步于导电粒子20定位至目标电路基板10的第一接触层82之后,于第一接触层82上再铺设有一第二接触层84。本实施例中,第二接触层84对后续步骤提供的电子元件提供定位的效果。
其中,该至少一导电粒子20位于接触层80之中:其可位于第一接触层82之中、或第一接触层82之上、或第一接触层82之上且第二接触层84之中。如图8A,该至少一导电粒子20位于接触层80位于第一接触层82之中。
值得注意的是,本发明中,至少一接触层80(包括第一接触层82与第二接触层84)的铺设,可与布置导电粒子的步骤S20交错实施,使达到如图3C、图3D、图3E的导电粒子20c、20d、20e的布设效果。又,欲达成如图3C、图3D、图3E的导电粒子20c、20d、20e的布设效果,亦可在目标电路基板10的导电电极144上沿Z轴实施限位结构(图未示),以拘束导电粒子定位在导电电极144上。然而;前述说明,仅为例示,而非局限本发明。
[第三实施例]
请参阅图9A至9C的第三实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第二实施例相同的标号。
步骤S10的步骤中或前或后,更包括:如图9A,提供一钢板60a,并投料多个导电粒子20;钢板60a具有一板体62a、以及于板体62a预设有多组容槽单元64a,各组容槽单元64a具有多个容槽642a。本实施例中,各个容槽642a具有多个凹槽642a。
如图9B,钢板60a携载多个导电粒子20;其中,全部或部分的各组容槽单元64a中,全部或部分的容槽642a携载多个导电粒子20。
如图9C,将该导电粒子20移转至目标电路基板10,由容槽642a携载的多个导电粒子20定位于同一导电电极144上,藉此可构成图3A至3F的预导电构造。
[第四实施例]
请参阅图10A的第四实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第二实施例相同的标号。
步骤S10的步骤中或前或后,更包括:如图10A,提供一钢板60b;钢板60b具有一板体62b、以及于板体62b预设有多组容槽单元64b,各组容槽单元64b具有至少一穿槽642b;使目标电路基板10邻近钢板62b,将钢板62b的该穿槽642b对应至全部或部分的该导电电极群14的各该导电电极144上,并投料多个导电粒子20,使至少一导电粒子20通过各该穿槽642b,得定位于相对应的该导电电极群14的各该导电电极144上。
当然,本实施例中,亦能先于目标电路基板10铺设有至少一接触层80,以进一步各该导电粒子20的定位。
[第五实施例]
请参阅图11A至图11C的第五实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第二实施例相同的标号。
步骤S10的步骤中或前或后,更包括:如图11A,提供一钢板60c;钢板60c具有一板体62c、于板体62c预设有多组容槽单元64c、以及容设于全部或部分的各该容槽单元64c中的粘着单元66c;其中,各组容槽单元具有至少一容槽,且容槽可呈穿槽或凹槽;各粘着单元具有至少一粘着件,其对应各组容槽单元的该至少一容槽。本实施例中,各组容槽单元64c具有二穿槽642c;各黏着单元66c具有二粘着件662c,个别对应各组容槽单元64c的二穿槽642c。
投料多个导电粒子20,使至少一导电粒子20受各个粘着件662c粘着;各组容槽单元64c中,全部或部分的穿槽642c携载多个导电粒子20。换句话说,透过在全部或部分的容槽单元64c的各个穿槽642c中,填充有粘着单元66c的各个粘着件662c,可决定钢板60c携载导电粒子20的数量。
如图11B,反置携载导电粒子20的钢板60c,令钢板60c与目标电路基板10互相迫近,使由各个粘着件662c所粘着的导电粒子20得定位于相对应的该导电电极群14的各该导电电极144上。
如图11C,移除钢板60c,藉此可构成图3A至3F的预导电构造。
[第六实施例]
请参阅图12A至图12B的第六实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第五实施例相同的标号。
步骤S10的步骤中或前或后,更包括:如图12A,先于目标电路基板10铺设有至少一接触层80,并反置目标电路基板10。提供第五实施例的已携载多个导电粒子20的钢板60c;令钢板60c与目标电路基板10互相迫近。
如图12B,使由各个粘着件662c所粘着的导电粒子20得接触前述接触层80,并定位于相对应的该导电电极群14的各该导电电极144上;移除钢板60c,藉此可构成图3A至3F的预导电构造。
本实施例中,目标电路基板10可如第二实施例铺设第一接触层82,再于导电粒子20接触第一接触层82,再进一步铺设其他接触层。
值得注意的是,反置目标电路基板10以进行制造过程操作,于其他各个实施例均可适用。
值得注意的是,接触层80是用来更好地将导电粒子20对应定位至导电电极144;而在不实施接触层80的制造过程下,可预熔导电电极144使呈熔化而微具粘性,亦能达到相同的移转效果,且于其他各个实施例均可适用。
[第七实施例]
请参阅图13、图14A与14B的第七实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第二实施例相同的标号。
于步骤S20之中或前,更包括:
如图13,提供携载多个导电粒子20的一印刷滚轮100。印刷滚轮100具有一滚轮本体120、预设于滚轮本体120上的多组容槽单元140,各组容槽单元140具有多个容槽142;全部或部分的各组容槽单元140中,全部或部分的容槽142携载该至少一导电粒子20。
本实施例中,该导电粒子20投料时,藉一挡止元件300扫除多余的导电粒子20,恰使得落入各该容槽142内的导电粒子20,可随印刷滚轮100的转动而携载。
同理,挡止元件300的设计,可推论能广泛地适用于其他实施例。
其中,印刷滚轮100定义有一最外表面122;由各该容槽142携载的该至少之一的导电粒子20,显露于印刷滚轮100的最外表面122。
关于预胶:
如图14A与图14B,是类似图7B、图7C。
如图14A,于目标电路基板10铺设有第一接触层82;使印刷滚轮100近接目标电路基板10上的第一接触层82时,得将所携载的导电粒子20定位至目标电路基板10所对应的导电电极144上。
如图14B,目标电路基板10相对印刷滚轮100移动,于导电粒子20定位至目标电路基板10的第一接触层82之后,于第一接触层82上再铺设有一第二接触层84。第二接触层84的铺设速率,可搭配印刷滚轮100的转速。
[第八实施例]
请参阅图15的第八实施例,并同时参阅图1;指示上相同、功能上类似的步骤与元件,采用与第五实施例相同的标号。
于步骤S20之中或前,更包括:
如图15,铺设一第一接触层82于一滚轮传动机构200上,该第一接触层82得随滚轮传动机构200移动;其中,滚轮传动机构200包括多个滚轮240与一传动带220。多个滚轮240至少包括一驱动滚轮242、与一从动滚轮244;传动带220连动驱动滚轮242与从动滚轮244。
使印刷滚轮100近接滚轮传动机构200的第一接触层82,该至少一导电粒子20得移转至第一接触层20。第一接触层82随滚轮传动机构200移动,并铺设至目标电路基板10。因此,由第一接触层82携载的该至少一导电粒子20是对应定位于各该导电电极群14具有至少一导电电极144上。
目标电路基板10相对滚轮传动机构200移动,于第一接触层82铺设至目标电路基板10后,于第一接触层82上再铺设有一第二接触层84。第二接触层84的铺设速率,可相当于传动带220的转速。
[第九实施例]
本实施例为本发明之于目标电路基板形成导电结构阵列的制造过程,是适用在第一至第八实施例后的制造过程,如图4;不同结构方式请分别参阅图5A至图5C。指示上相同、功能上类似的步骤与元件,采用与第一实施例相同的标号。
于步骤S20后,更包括:
如图4,布设多个电子元件至目标电路基板10,各该电子元件具有至少一电极,使各该电子元件的电极对应并定位全部或部分的该预导电构造30;
本实施例中,电子元件为一种微半导体结构40,各该微半导体结构40,通常以阵列排列,其具有一本体42、至少一电极44。本发明是以“半导体结构”、“半导体器件”同义使用且广泛地是指一半导体材料、晶粒、结构、器件、一器件的组件、或一半成品。所使用“微”半导体结构、“微”半导体器件是同义使用且泛指微尺度。半导体元件包含高品质单晶半导体及多晶半导体、经由高温处理而制造的半导体材料、掺杂半导体材料、有机及无机半导体,以及具有一或多个额外半导体组件或非半导体组件的组合半导体材料及结构(诸如,介电层或材料,或导电层或材料)。半导体元件包含(但不限于)晶体管、包含太阳能电池的光伏打器件、二极管、发光二极管、雷射、p~n接面、光电二极管、积体电路及传感器的半导体器件及器件组件。此外,半导体元件可指形成一功能性半导体器件或产品的一部件或部分。该微半导体结构40可为制造过程完整且个别独立的微发光二极管晶粒、或制造过程中断但个别独立的微发光二极管半成品。
如图5A(同时参阅图2A),接续图4,各该微半导体结构40是为一水平式或覆晶式电极的微发光二极管晶粒。对各该微半导体结构40与目标电路基板10施予加热压合,使各该微半导体结构40的一对电极44、与所对应的目标电路基板10的该预导电构造30,共同形成一导电结构50;藉此,于目标电路基板形成导电结构阵列。两两导电结构50之间,不具有导电粒子20。由于导电结构50由导电粒子20受热压而略变形呈微扁,以便于稳定地在微半导体结构40的电极44与目标电路基板10的导电电极144产生一真正导电路径RD;当然,真正导电路径RD的数量与导电状态不止于图面所示,视导电粒子20与两侧电极44、144的材料是否适配、以及所受热压的条件是否满足等因素决定。
如图5B(同时参阅图2B),是第九实施例的另一结构方式,各该微半导体结构40a是为一垂直式电极的微发光二极管晶粒。对各该微半导体结构40a与目标电路基板10a施予加热压合,使各该微半导体结构40a的一电极44a、与所对应的目标电路基板10a的该预导电构造30a,共同形成一导电结构50a、以及其真正导电路径RD;各该导电结构50a定义有单位面积的导电粒子数的一第一密度,两两导电结构50a之间定义有单位面积的导电粒子数的一第二密度,第一密度大于第二密度;本实施例中,则采第一密度远远大于第二密度的方案:两两导电结构50a之间,不具有导电粒子20。
如图5C(同时参阅图3B),是第九实施例的又一结构方式,可对应图3A至图3F中多个分布的导电粒子20a至导电粒子20f的方式;各该微半导体结构40b是为一水平式或覆晶式电极的微发光二极管晶粒。对各该微半导体结构40b与目标电路基板10b施予加热压合,使各该微半导体结构40b的一对电极44b、与所对应的目标电路基板10b的该预导电构造30b,共同形成一导电结构50b、以及其真正导电路径RD;类似地,第一密度大于第二密度;本实施例中,则采第一密度远远大于第二密度的方案:两两导电结构50b之间,不具有导电粒子20。
藉此,采用本发明的对目标电路基板形成预导电阵列的方法,可利用导电粒子选择性的铺设,而达到对目标电路基板上形成预导电阵列;再更进一步将多个微半导体结构与目标电路基板的预导电阵列施予加热压合,形成导电结构阵列的效果。
其中,预导电阵列的形成,可透过导电电极群14、导电部144、导电粒子20的数量不同来排列组合与理解;例如:呈第一数量Q1的多组导电电极群14,各组导电电极群14中呈第二数量Q2的至少一对导电电极144(或至少一导电电极144)、各该导电电极144上呈第三数量Q3的导电粒子20。或,可透过导电电极群14、导电电极144、导电粒子20的图形不同来排列组合与理解;例如:按一第一图形阵列P1散布的多组导电电极群14,各组导电电极群14中按一第二图形阵列P2散布的至少一对导电电极144(或至少一导电电极144);各该导电电极144上按一第三图形阵列P3散布的导电粒子20。
值得注意的是,导电粒子20可藉预设于导电电极144上的限位结构或预胶(至少一接触层80)定位在导电电极144上。当导电粒子20受预胶定位时,两两导电结构50b之间,具有较低密度的单位面积的导电粒子数或者不具有导电粒子20,但将具有受热硬化(固化或塑化)的接触层80。当导电粒子20受导电电极144的限位结构拘束时,两两导电结构50b之间,不仅具有较低密度的单位面积的导电粒子数或者不具有导电粒子20,亦不具有受热硬化(固化或塑化)的接触层80。
此外,在微半导体结构与目标电路基板受热压合时,导电粒子20亦容易偏移,特别是发生在图5C的实施方式,预胶(至少一接触层80)可在受热固化(或塑化)的过程中进一步限制导电粒子20的偏移,使对位更为精准。当然,若导电电极144的限位结构本身即能限制多个导电粒子20的偏移,亦能不实施预胶制造过程。
值得注意的是,本发明各个实施例中的导电粒子,以按不同目标电路基板铺设为需求,且以不浪费导电粒子为功效;可推论,本发明各个实施例中,两两预导电构造(或两两导电结构)之间不具有导电粒子。然而,实务上可能受限于设备精度、或有意落入本发明技术方案的回避设计等原因,各该预导电构造(或各该导电结构)定义有单位面积的导电粒子数的第一密度,两两预导电构造(或两两导电结构)之间定义有单位面积的导电粒子数的第二密度,其中,第一密度大于第二密度,即应视为两两预导电构造(或两两导电结构)之间不具有导电粒子,的等效结构。综上所述,在本发明的技术方案,其功效包含,但不局限本发明:
1、能够与超薄、易碎及/或微小型器件的选择及应用,在精度上互相匹配;可广泛地被使用于各尺寸欲定位至目标电路基板的电子元件。
2、能因应不同目标电路基板的需要,形成所需的预导电阵列,一者提高导电精度,二者便于客制化。
3、可有效形成预导电阵列,避免传统异方性导电膏中导电粒子的浪费,对业界提供一种可灵活适用、低成本高效率的制造过程选项。
4、在该微半导体结构与目标电路基板受热压合时,预胶制造过程可进一步防止导电粒子的偏移。
以上所述仅为举例性,而非为限制性者。任何未脱离本发明的精神与范畴,而对其进行的等效修改或变更,均应包含于后附之权利要求中。
Claims (20)
1.一种设于目标电路基板的预导电阵列,包括:
设于一目标电路基板的多组导电电极群;两两导电电极群之间定义一第一间距;各所述导电电极群具有至少一对导电电极;以及
至少一导电粒子,于全部或部分的所述导电电极群的各所述导电电极上;
其中,所述至少一导电粒子、及其相对应的所述对导电电极,构成一预导电构造;所述预导电构造构成一预导电阵列;
其中,各所述预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
2.如权利要求1所述的目标电路基板的预导电阵列,其中:
所述导电电极群具有多对导电电极,且定义一第二间距于相邻两对导电电极之间,一第三间距于各所述对的两导电电极之间。
3.如权利要求1所述的目标电路基板的预导电阵列,其中:
一第三间距定义于各所述对的两导电电极之间。
4.如权利要求1所述的目标电路基板的预导电阵列,其中:
各所述预导电构造包括多个导电粒子;所述导电粒子形成至少一预导电路径。
5.如权利要求1所述的目标电路基板的预导电阵列,更包括:
至少一接触层,铺设于所述目标电路基板上;其中,所述导电粒子是位于所述接触层之中、或所述接触层之上。
6.一种设于目标电路基板的预导电阵列,包括:
设于一目标电路基板的多组导电电极群;两两导电电极群之间定义一第一间距;各所述导电电极群具有一导电电极;以及
至少一导电粒子,于全部或部分的所述导电电极群的各所述导电电极上;
其中,所述至少一导电粒子、及其相对应的所述导电电极,构成一预导电构造;所述预导电构造构成一预导电阵列;
其中,各所述预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
7.如权利要求6所述的目标电路基板的预导电阵列,其中:
各所述预导电构造包括多个导电粒子;所述导电粒子形成至少一预导电路径。
8.如权利要求6所述的目标电路基板的预导电阵列,更包括:
至少一接触层,铺设于所述目标电路基板上;其中,所述导电粒子是位于所述接触层之中、或所述接触层之上。
9.一种目标电路基板的预导电阵列,包括:
设于一目标电路基板的多个预导电构造;各所述预导电构造包括:
设于一目标电路基板上、且呈第一数量的多组导电电极群,各组导电电极群包括呈第二数量的至少一对导电电极;以及
定位于全部或部分的所述导电电极群的各所述导电电极上,且呈第三数量的至少一导电粒子;
其中,各所述预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
10.一种目标电路基板的预导电阵列,包括:
设于一目标电路基板的多个预导电构造;各所述预导电构造包括:
设于一目标电路基板上、且呈第一数量的多组导电电极群,各组导电电极群包括呈第二数量的至少一导电电极;以及
定位于全部或部分的所述导电电极群的各所述导电电极上,且呈第三数量的至少一导电粒子;
其中,各所述预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
11.一种目标电路基板的预导电阵列,包括:
设于一目标电路基板的多个预导电构造;各所述预导电构造包括:
设于一目标电路基板上、且按一第一图形阵列散布的多组导电电极群,各组导电电极群包括按一第二图形阵列散布的至少一对导电电极;以及
定位于全部或部分的所述导电电极群的各所述导电电极上,且按一第三图形阵列散布的至少一导电粒子;
其中,各所述预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
12.一种目标电路基板的预导电阵列,包括:
设于一目标电路基板的多个预导电构造;各所述预导电构造包括:
设于一目标电路基板上、且按一第一图形阵列散布的多组导电电极群,各组导电电极群包括按一第二图形阵列散布的至少一导电电极;以及
定位于全部或部分的所述导电电极群的各所述导电电极上,且按一第三图形阵列散布的至少一导电粒子;
其中,各所述预导电构造定义有单位面积的导电粒子数的一第一密度,两两预导电构造之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
13.一种目标电路基板的导电结构阵列,包括:
应用于一目标电路基板的预导电阵列;以及
阵列式微半导体结构,对应所述目标电路基板的所述预导电阵列的部分或全部;其中,各所述微半导体结构具有一对电极,各所述微半导体结构的各所述电极、与所对应的所述目标电路基板的所述预导电构造,共同形成一导电结构;
其中,各所述导电结构定义有单位面积的导电粒子数的一第一密度,两两导电结构之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
14.如权利要求13所述的目标电路基板的导电结构阵列,更包括:
两两导电结构之间,具有受热硬化的一接触层。
15.如权利要求14所述的目标电路基板的导电结构阵列,其中:
两两导电结构之间的所述第二密度,存在于受热硬化的所述接触层。
16.如权利要求15所述的目标电路基板的导电结构阵列,其中:
两两导电结构之间不具有导电粒子。
17.一种目标电路基板的导电结构阵列,包括:
应用于一目标电路基板的预导电阵列;以及
阵列式微半导体结构,对应所述目标电路基板的所述预导电阵列的部分或全部;其中,各所述微半导体结构具有一电极,各所述微半导体结构的所述电极、与所对应的所述目标电路基板的所述预导电构造,共同形成一导电结构;
其中,各所述导电结构定义有单位面积的导电粒子数的一第一密度,两两导电结构之间定义有单位面积的导电粒子数的一第二密度,所述第一密度大于所述第二密度。
18.如权利要求17所述的目标电路基板的导电结构阵列,其中:
两两导电结构之间,具有受热硬化的一接触层。
19.如权利要求18所述的目标电路基板的导电结构阵列,其中:
两两导电结构之间的所述第二密度,存在于受热硬化的所述接触层。
20.如权利要求19所述的目标电路基板的导电结构阵列,其中:
两两导电结构之间不具有导电粒子。
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US20190096835A1 (en) | 2019-03-28 |
CN109560071B (zh) | 2022-05-27 |
TWI742163B (zh) | 2021-10-11 |
US10431561B2 (en) | 2019-10-01 |
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