CN109545683A - 晶圆表面的平坦化方法 - Google Patents

晶圆表面的平坦化方法 Download PDF

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CN109545683A
CN109545683A CN201811423514.2A CN201811423514A CN109545683A CN 109545683 A CN109545683 A CN 109545683A CN 201811423514 A CN201811423514 A CN 201811423514A CN 109545683 A CN109545683 A CN 109545683A
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wafer
layer
mixed gas
top silicon
silicon layer
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魏星
高楠
陈猛
苏鑫
徐洪涛
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Shanghai Simgui Technology Co Ltd
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Abstract

一种晶圆表面的平坦化方法，包括如下步骤：提供一晶圆，所述晶圆包括绝缘埋层以及绝缘埋层表面的顶层硅层；采用氢气和HCl的混合气体对所述顶层硅层的表面进行刻蚀，所述混合气体从所述晶圆侧方通入，且边缘区域和中心区域的气体流速可通过设备参数进行调节，从而获得更好的刻蚀均匀性。

Description

晶圆表面的平坦化方法
技术领域
本发明涉及半导体材料制造领域，尤其涉及一种晶圆表面的平坦化方法。
背景技术
SOI是一种广泛应用的新一代硅基材料，无论在低压、低功耗电路，还是微机械传感器、光电集成等方面，都具有重要应用。对于SOI材料而言，顶层硅厚度均匀性是一个关键参数，该参数对器件性能有重要影响。
在SOI工艺制程中，对顶层硅的平坦化通常采用化学机械抛光(ChemicalMechanical Polishing，CMP)的方式来进行，随着顶层硅厚度的不断降低，对顶层硅均匀性要求的提升，CMP工艺已无法满足工艺要求。
发明内容
本发明所要解决的技术问题是，提供一种晶圆表面的平坦化方法。
为了解决上述问题，提供一种晶圆表面的平坦化方法，包括如下步骤：提供一晶圆，所述晶圆包括绝缘埋层以及绝缘埋层表面的顶层硅层；采用氢气和HCl的混合气体对所述顶层硅层的表面进行刻蚀，所述混合气体从所述晶圆侧方通入，且边缘区域的混合气体流速小于中心区域的混合气体流速。
可选的，采用如下步骤形成所述晶圆：提供第一晶圆和第二晶圆；氧化所述第一晶圆，在所述第一晶圆表面形成氧化层；注入起泡离子，以在所述第一晶圆内形成剥离层；以所述氧化层为中间层，将所述第一晶圆和所述第二晶圆键合，形成键合后晶圆；升温以使键合后晶圆在所述剥离层开裂，开裂后保留在所述氧化层表面的部分第一晶圆即为所述顶层硅层，所述氧化层即为所述绝缘埋层。所述起泡离子选自于氢气、氦气、以及氢气和氦气的混合气体中的一种。
可选的，所述表面刻蚀的步骤，对顶层硅层的刻蚀去除量大于80nm。
可选的，所述刻蚀步骤的温度大于1050℃。
可选的，所述刻蚀步骤中所述混合气体中HCl的体积分数小于1％。
可选的，所述刻蚀步骤中所述混合气体的流速范围是40升/分钟至120升/分钟。
由于顶层硅层的目标厚度很薄，通常小于200nm，甚至小于20nm，因此化学机械抛光很难满足平整度的要求，上述采用HCl的刻蚀方法相对于抛光工艺更能够精确的控制表面平整度，满足工艺需求。并且经研究发现，边缘和中心设定相同流速的情况下，晶圆边缘的刻蚀速率会略大于中心刻蚀速率，呈现出向心分布现象。因此在本具体实施方式中，边缘区域的混合气体流速被设置为小于中心区域的混合气体流速，以平衡刻蚀速率的向心分布现象。
附图说明
附图1所示是本发明所述具体实施方式的实施步骤示意图。
附图2A至附图2E以及附图3所示，是附图1所述步骤的工艺流程示意图。
附图4所示是一种实现附图3所示刻蚀工艺的一种刻蚀装置的具体实施方式的结构示意图。
具体实施方式
下面结合附图对晶圆表面的平坦化方法的具体实施方式做详细说明。
附图1所示是本发明所述具体实施方式的实施步骤示意图，包括：步骤S110，提供第一晶圆和第二晶圆；步骤S111，氧化所述第一晶圆，在所述第一晶圆表面形成氧化层；步骤S112，注入起泡离子，以在所述第一晶圆内形成剥离层；步骤S113，以所述氧化层为中间层，将所述第一晶圆和所述第二晶圆键合，形成键合后晶圆；步骤S114，升温以使键合后晶圆在所述剥离层开裂，开裂后保留在所述氧化层表面的部分第一晶圆即为所述顶层硅层，所述氧化层即为所述绝缘埋层；步骤S120，采用氢气和HCl的混合气体进行刻蚀，所述混合气体从晶圆侧方通入，且边缘区域的混合气体流速小于中心区域的混合气体流速。
附图2A至附图2E以及附图3所示，是上述步骤的工艺流程示意图。
附图2A所示，参考步骤S110，提供第一晶圆21和第二晶圆22。所述第一晶圆21用于后续的剥离工艺，其用于剥离的表面应当是单晶硅材料。而第二晶圆22用作键合的支撑衬底，其材料可以是包括单晶硅、蓝宝石、碳化硅等任意一种常见的半导体衬底材料。
附图2B所示，参考步骤S111，氧化所述第一晶圆21，在所述第一晶圆表面形成氧化层211。所述氧化可以采用干氧或者湿氧氧化法，形成的氧化层211的材料为二氧化硅，厚度优选小于500nm。
附图2C所示，参考步骤S112，注入起泡离子，以在所述第一晶圆21内形成剥离层212。所述起泡离子选自于氢气、氦气、以及氢气和氦气的混合气体中的一种，注入能量小于100keV，注入剂量范围1×1016cm-2至6×1016cm-2。
附图2D所示，参考步骤S113，以所述氧化层211为中间层，将所述第一晶圆21和所述第二晶圆22键合，形成键合后晶圆23。
附图2E所示，参考步骤S114，升温以使键合后晶圆23在所述剥离层212开裂，开裂后保留在所述氧化层211表面的部分第一晶圆即为顶层硅层29，所述氧化层211即为绝缘埋层28。剥离层212开裂所需的温度范围为300℃至600℃，持续时间为10分钟至60分钟。
上述步骤S110至S114实施完毕后，获得的键合后晶圆23，包括顶层硅层29以及绝缘埋层28。由于顶层硅层29的表面是采用剥离工艺获得的表面，因此粗糙度较大，需要通过表面处理工艺对表面进行平坦化。上述获得晶圆的方法仅是一具体实施方式所述之方法，在其他的具体实施方式中，更多的方法还可以被采用以获得具有同样或者类似结构的，包括绝缘埋层以及绝缘埋层表面的顶层硅层的晶圆。
附图3所示，参考步骤S120，采用氢气和HCl的混合气体对所述顶层硅层的表面进行刻蚀，所述混合气体从晶圆23侧方通入，且边缘区域的混合气体流速小于中心区域的混合气体流速。为了获得较佳的刻蚀效果，优选顶层硅层29在刻蚀前进行氢气烘烤以去除表面的自然氧化层，通常采用1100℃以上的温度处理40秒以上的时间，以确保后续HCl对硅的刻蚀。在本具体实施方式中，所述刻蚀步骤的温度大于1050℃，所述刻蚀步骤中所述混合气体中HCl的体积分数小于1％，所述刻蚀步骤中所述混合气体的流速范围是40升/分钟至120升/分钟。为了获得较佳的刻蚀效果，优选对顶层硅层29的刻蚀去除量大于80nm。由于顶层硅层29的目标厚度很薄，通常小于200nm，甚至小于20nm，因此化学机械抛光很难满足平整度的要求，上述采用HCl的刻蚀方法相对于抛光工艺更能够精确的控制表面平整度，满足工艺需求。
附图4所示是一种实现上述刻蚀工艺的一种刻蚀装置的具体实施方式的结构示意图，晶圆23被置于腔体40中，并采用多个可独立调节流速的气体喷嘴，在本具体实施方式中为喷嘴41-45，分别对应从中心到边缘五个位置喷入混合气体，并对喷入气体的气流进行调节。边缘和中心区域的气体流速可通过设备参数进行调节，从而获得更好的刻蚀均匀性。经研究发现，在边缘和中心采用相同的气流大小的条件下，晶圆边缘的刻蚀速率会略大于中心刻蚀速率，呈现出中心对称分布现象。因此在本具体实施方式中，边缘区域的混合气体流速被设置为小于中心区域的混合气体流速，以平衡刻蚀速率的向心分布现象。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (7)

1.一种晶圆表面的平坦化方法，其特征在于，包括如下步骤：
提供一晶圆，所述晶圆包括绝缘埋层以及绝缘埋层表面的顶层硅层；
采用氢气和HCl的混合气体对所述顶层硅层的表面进行刻蚀，所述混合气体从所述晶圆侧方通入，且边缘区域的混合气体流速小于中心区域的混合气体流速。
2.根据权利要求1所述的方法，其特征在于，采用如下步骤形成所述晶圆：
提供第一晶圆和第二晶圆；
氧化所述第一晶圆，在所述第一晶圆表面形成氧化层；
注入起泡离子，以在所述第一晶圆内形成剥离层；
以所述氧化层为中间层，将所述第一晶圆和所述第二晶圆键合，形成键合后晶圆；
升温以使键合后晶圆在所述剥离层开裂，开裂后保留在所述氧化层表面的部分第一晶圆即为所述顶层硅层，所述氧化层即为所述绝缘埋层。
3.根据权利要求2所述的方法，其特征在于，所述起泡离子选自于氢气、氦气、以及氢气和氦气的混合气体中的一种。
4.根据权利要求1所述的方法，其特征在于，所述表面刻蚀的步骤，对顶层硅层的刻蚀去除量大于80nm。
5.根据权利要求1所述的方法，其特征在于，所述刻蚀步骤的温度大于1050℃。
6.根据权利要求1所述的方法，其特征在于，所述刻蚀步骤中所述混合气体中HCl的体积分数小于1％。
7.根据权利要求1所述的方法，其特征在于，所述刻蚀步骤中所述混合气体的流速范围是40升/分钟至120升/分钟。
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CN106992142A (zh) * 2016-01-21 2017-07-28 沈阳硅基科技有限公司 一种纳米级超薄膜tm-soi硅片的制备方法

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