CN109541885A - Joining method, nano impression plate, grating and the production method of nano-pattern - Google Patents
Joining method, nano impression plate, grating and the production method of nano-pattern Download PDFInfo
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- CN109541885A CN109541885A CN201910032180.4A CN201910032180A CN109541885A CN 109541885 A CN109541885 A CN 109541885A CN 201910032180 A CN201910032180 A CN 201910032180A CN 109541885 A CN109541885 A CN 109541885A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
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Abstract
The present invention provides a kind of joining method of nano-pattern, nano impression plate, grating and production method, belong to field of display technology, the joining method of nano-pattern includes: that the first photoresist layer is formed on the underlay substrate for being formed with the first film layer, first photoresist layer is patterned, the photoresist reserved area in photoresist the removal area and other regions on corresponding substrate substrate in the region to be patterned on corresponding substrate substrate is formed；The photoresist in the photoresist reserved area on the first photoresist layer is thinned；The coining glue-line with imprinted pattern, coining glue-line covering photoresist removal area and the part photoresist reserved area adjacent with photoresist removal area are formed on underlay substrate；Using imprinted pattern as exposure mask, first film layer in photoresist removal area is performed etching, the first nano-pattern is formed；Above-mentioned steps are repeated, the first nano-pattern of splicing is formed.The present invention reduces the segment difference at zone boundary to be patterned by the photoresist being thinned on the first photoresist layer.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of joining methods of nano-pattern, nano impression plate, grating
And production method.
Background technique
In recent years, nanometer embossing is swift and violent as a kind of development of micro-nano technology technology, which is turned by mechanical
The means of shifting have reached the resolution ratio of superelevation, be expected to it is following replace photoetching technique and become microelectronics, Material Field it is important
Manufacturing process.
Currently, when making large scale coining motherboard defining for region to be patterned can be carried out by photoetching process, with reality
The splicing production of existing macro nanometer pattern, needs a kind of water-soluble material, first in the material in nano-pattern manufacturing process
Nano-pattern is formed on material, is then carried out coining glue on the material and is coated to be formed with the pattern complementary with the nano-pattern
Coining glue-line, will finally imprint glue-line 105 and be transferred to and complete to reach spelling on the substrate that defines of imprinting area by photoetching process
Connect purpose.It is bigger in borderline region segment difference but when carrying out region deviding using photoetching process, lead to subsequent moulding process
In boundary be easy to appear coining glue-line 105 fall glue and deformation the problem of, as shown in Figure 1, so as to cause pattern it is bad.
Summary of the invention
In view of this, the present invention provides a kind of joining method of nano-pattern, nano impression plate, grating and production method,
When solving the existing formation macro nanometer pattern by joining method, lead to side because the photoresist layer as region deviding is thicker
Segment difference is larger at boundary, and then the coining glue of boundary in subsequent moulding process is led to problems such as to fall glue and deformation.
In order to solve the above technical problems, the present invention provides a kind of joining method of nano-pattern, comprising:
Region deviding step: forming the first photoresist layer on the underlay substrate for being formed with the first film layer, using photoetching work
Skill is patterned first photoresist layer, and the photoresist in the region to be patterned formed on the corresponding underlay substrate is gone
Except the photoresist reserved area in other regions in area and the corresponding underlay substrate；
Photoresist reduction steps: the photoresist in the photoresist reserved area on first photoresist layer is thinned；
It imprints glue-line forming step: forming the coining glue-line with imprinted pattern, the coining on the underlay substrate
Glue-line covers the photoresist removal area and the part photoresist reserved area adjacent with photoresist removal area；
Etch step: using the imprinted pattern as exposure mask, first film layer in photoresist removal area is carved
Erosion forms the first nano-pattern；
Splicing step: the region deviding step, the photoresist reduction steps, coining glue-line forming step are repeated
And etch step, form the first nano-pattern of splicing.
Optionally, the etch step includes:
Using the imprinted pattern as exposure mask, first film layer in photoresist removal area is performed etching, forms the
Before one nano-pattern, the second photoresist layer is formed on the underlay substrate；
Using photoetching process, second photoresist layer is patterned, formed on the corresponding underlay substrate wait scheme
The photoresist removal area in case region and the photoresist reserved area in other regions on the corresponding underlay substrate.
Optionally, the coining glue-line forming step includes:
Coating coining glue, forms the coining glue-line in the soft template with the pattern complementary with the imprinted pattern；
The soft template for being formed with the coining glue-line above is transferred on the underlay substrate, the coining glue-line
It is close to first film layer；
Remove the soft template.
Optionally, on the coining glue-line, the size in region shared by the imprinted pattern is greater than the region to be patterned
Size.
Optionally, the soft template is water-soluble polyvinyl alcohol soft template.
Optionally, after the etch step, further includes:
Remove remaining photoresist on the photoresist reserved area.
The present invention also provides a kind of production methods of nano impression plate, including the splicing using any of the above-described kind of nano-pattern
Method forms the step of the first nano-pattern of splicing.
The present invention also provides a kind of production methods of grating, including the joining method shape using any of the above-described kind of nano-pattern
At splicing the first nano-pattern the step of.
The present invention also provides a kind of nano impression plates, are made using the production method of above-mentioned nano impression plate.
The present invention also provides a kind of gratings, are made using the production method of above-mentioned grating.
The advantageous effects of the above technical solutions of the present invention are as follows:
The embodiment of the present invention can be used for preparing large-sized nano-pattern, by being thinned to current region to be patterned
The photoresist (namely photoresist in the photoresist reserved area on first photoresist layer) being bound, can prevent subsequent
It carries out defining the problem of glue and deformation occurs in boundary because segment difference is too high in nanoimprinting process, so as to serve as a contrast
High-precision joining and the production of nano-pattern are realized on substrate.With the existing method for preparing macro nanometer pattern by splicing
It compares, it is at low cost, high-efficient, yield is also high.
Detailed description of the invention
There is the signal that coining glue-line falls glue and deformation in Fig. 1 when being the existing production macro nanometer pattern using joining method
Figure；
Fig. 2 is a kind of flow diagram of the joining method of nano-pattern provided in an embodiment of the present invention；
Fig. 3 is the cross-sectional structure schematic diagram for being formed with the underlay substrate of the first film layer in the embodiment of the present invention above；
Fig. 4 is that photoresist removes area and photoetching after carrying out region deviding by photoetching process for the first time in the embodiment of the present invention
The cross-sectional view of glue reserved area；
Fig. 5 is the cross section after the photoresist of photoresist reserved area on the first photoresist layer in the embodiment of the present invention is thinned
Schematic diagram；
Fig. 6 is the cross-sectional view formed on underlay substrate after coining glue-line in the embodiment of the present invention；
Fig. 7 is to form the first nano-pattern after the first film layer for removing area to photoresist in the embodiment of the present invention performs etching
Cross-sectional view；
Fig. 8 is the cross-sectional view that spliced first nano-pattern is completed in the embodiment of the present invention；
Fig. 9 is the needle pore defect formed when the photoresist in the photoresist reserved area on the first photoresist layer is thinned, is led
Cause the first film layer of lower section by the cross-sectional view after the etching gas etching in subsequent etching processes；
Figure 10 is to form the second photoresist layer on coining glue-line in the embodiment of the present invention, and formed again by composition
The cross-sectional view of the photoresist reserved area and photoresist removal area；
Figure 11 is that the cross section for being patterned and etching to the second photoresist layer in the embodiment of the present invention after the first film layer shows
It is intended to；
Figure 12 is the cross-sectional view of the second nano-pattern formed in the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's every other embodiment obtained, shall fall within the protection scope of the present invention.
As shown in Fig. 2, the embodiment of the invention provides a kind of joining methods of nano-pattern, comprising:
Step 11 namely region deviding step: forming the first light on the underlay substrate 101 for being formed with the first film layer 103
Photoresist layer 104 is patterned first photoresist layer 104 using photoetching process, forms the corresponding underlay substrate 101
On the photoresist removal area 1041 in region to be patterned and the photoresist in other regions on the corresponding underlay substrate 101 protect
Stay area 1042；
Specifically, the underlay substrate 101 can be glass substrate.Before region deviding step, first in glass substrate
Surface deposits the first film layer 103, please refers to Fig. 3.After being patterned to first photoresist layer 104, forms photoresist and go
Except area 1041 and photoresist reserved area 1042 (seeing Fig. 4), namely pass through Partial exposure to the first photoresist layer 104, aobvious
The region to be patterned is defined in shadow completion.
Step 12 namely photoresist reduction steps: the photoresist reserved area 1042 on first photoresist layer 104 is thinned
In photoresist, please refer to Fig. 5；
Dry carving technology specifically can be used, reduction processing is carried out to the photoresist.
Step 13, it namely imprints glue-line forming step: forming the coining with imprinted pattern on the underlay substrate 101
Glue-line 105, the coining glue-line 105 cover the photoresist removal area 1041 and remove the adjoining of area 1041 with the photoresist
The part photoresist reserved area 1042, please refers to Fig. 6；
Specifically, nano-imprint process can be carried out to the soft template for being coated with coining glue on the underlay substrate 101, and
The soft template is removed, there is the pattern complementary with the imprinted pattern in the soft template, so as in the underlay substrate
The coining glue-line 105 with imprinted pattern is formed on 101.
Step 14 namely etch step: using the imprinted pattern as exposure mask, to described in photoresist removal area 1041
First film layer 103 performs etching, and forms the first nano-pattern 10321, please refers to Fig. 7；
Conductive coupling plasma etching industrial (inductively coupled plasma, abbreviation ICP) specifically can be used,
In etching process, the coining glue-line 105 in photoresist removal area 1041, which can be etched, ambient oxidation and to be removed.
Step 15, namely splice step: repeating the region deviding step, the photoresist reduction steps, coining
Glue-line forming step and etch step form the first nano-pattern 10321 of splicing.That is, as shown in figure 8, first film
Whole region to be patterned on layer 103 has been patterned.In specific embodiments, the region can be only repeated once
Step, the photoresist reduction steps, the coining glue-line forming step and the etch step are defined, can be formed complete
First nano-pattern 10321.It may also need that above steps may be repeated multiple times, complete first nano-pattern 10321 could be formed.
The joining method of nano-pattern provided in an embodiment of the present invention can be used for preparing large-sized nano-pattern, pass through
The photoresist that is bound to current region to be patterned is thinned, and (namely the photoresist on first photoresist layer 104 is protected
Stay the photoresist in area 1042), it can prevent from defining boundary because segment difference is too high in subsequent progress nanoimprinting process
Occur it is shown in FIG. 1 fall glue and deformation phenomena such as, so as on underlay substrate realize nano-pattern high-precision joining with
Production.It is at low cost, high-efficient, yield is also high compared with the existing method for preparing macro nanometer pattern by splicing.
The joining method of above-mentioned nano-pattern is exemplified below.
Specifically, can be used in the photoresist reserved area 1042 that dry carving technology is thinned on first photoresist layer 104
Photoresist, but needle pore defect (as shown in Figure 5) may be formed in the photoresist in thinning process, in subsequent etch step
Etching gas may etch the first following film layer 103 (as shown in Figure 9) by pin hole.Therefore, as of the invention preferred
Embodiment, the etch step include:
Using the imprinted pattern as exposure mask, first film layer 103 in photoresist removal area 1041 is performed etching,
It is formed before the first nano-pattern 10321, forms the second photoresist layer 106 on the underlay substrate 101；
Using photoetching process, second photoresist layer 106 is patterned, is formed on the corresponding underlay substrate 101
Region to be patterned photoresist removal area 1041 and other regions on the corresponding underlay substrate 101 the light
Photoresist reserved area 1042, as shown in Figure 10.
That is, the photoresist in the photoresist reserved area 1042 being thinned on first photoresist layer 104, and described
The coining glue-line 105 and then secondary in institute is covered on photoresist removal area 1041 and the part photoresist reserved area 1042
Coating photoresist layer (the second photoresist layer 106) on underlay substrate 101 is stated, and the region to be patterned is bound again
(passing through mode of composition), to form the of not pin hole on the photoresist reserved area 1042 of first photoresist layer 104
Two photoresist layers 106, so as to stop the etching gas in subsequent etch step to pass through the pin hole on the first photoresist layer 104
Etch the first following film layer 103, as shown in figure 11, avoid on the photoresist because of photoresist reserved area 1042 there are pin hole lack
Fall into the problem for causing the first film layer 103 bad.
Optionally, the coining glue-line forming step includes:
Coating coining glue, forms the coining glue-line in the soft template with the pattern complementary with the imprinted pattern
105；
The soft template for being formed with the coining glue-line 105 above is transferred on the underlay substrate 101, the pressure
Print glue-line 105 is close to first film layer 103；
Remove the soft template.
Splice precision to improve, needs to guarantee corresponding with the edge in the region to be patterned on the coining glue-line 105
Region coining effect, therefore the area of the pattern in the soft template will be slightly larger than the region to be patterned.To described
Imprint on glue-line 105, the size in region shared by the imprinted pattern also greater than the region to be patterned size, such as Fig. 6 institute
Show.In general, the region to be patterned defined in abovementioned steps by photoetching process be it is rectangular, therefore, the pressure
The length for being patterned shared region is greater than the length in the region to be patterned, and width is also greater than the region to be patterned
Width.
Preferably, the soft template is water-soluble polyvinyl alcohol (PVA) soft template.Therefore, it can be removed by washing
The soft template.
In the embodiment of the present invention, using the imprinted pattern as exposure mask, to described the of photoresist removal area 1041
One film layer 103 performs etching, and is formed after the first nano-pattern 10321, the photoresist reserved area 1042 can also remain photoetching
Glue, as shown in figure 11.Therefore, after the etch step, further includes:
Remaining photoresist namely stripping photoresist on the photoresist reserved area 1042 are removed, the photoresist retains
Coining glue may also be accompanied in photoresist in area 1042, be also stripped together with remaining photoresist, obtain it is shown in Fig. 7 not
The part nano-pattern of splicing.
Optionally, as seen in figures 3-6, first film layer 103 includes the first sub- film layer 1031 and the second sub- film layer 1032,
The first sub- film layer 1031 is located between the underlay substrate 101 and the second sub- film layer 1032, first nanometer of figure
Case 10321 is formed in the described second sub- film layer 1032, as shown in figure 8,
After the splicing step, further includes:
It is exposure mask with the first nano-pattern 10321 of the splicing, the described first sub- film layer 1031 is performed etching, is formed
Second nano-pattern 10311, as shown in figure 12.
In addition, further including the second film layer 102 between the underlay substrate 101 and first film layer 103.Namely described
When forming first film layer 103 on underlay substrate 101, need to be sequentially depositing the second film layer 102, on underlay substrate 101
Two sub- film layers 1032 and the first sub- film layer 1031.
The embodiment of the present invention also provides a kind of production method of nano impression plate, including uses any of the above-described kind of nano-pattern
Joining method formed splicing the first nano-pattern 10321 the step of.Wherein, the material of second film layer 102 is nitridation
Silicon (SiNx), the material of the first sub- film layer 1031 is silicon (Si), and the material of the second sub- film layer 1032 is silica (SiO2)。
The embodiment of the present invention provides a kind of production method for realizing macro nanometer platen using photoetching process, this method
High-precision joining and the production of nano-pattern can be realized on substrate base substrate, it is even lower that precision can reach hundred nano-scale.
The embodiment of the present invention also provides a kind of nano impression plate, using the production method production of above-mentioned nano impression plate
At.
The embodiment of the present invention also provides a kind of production method of grating, including the splicing using any of the above-described kind of nano-pattern
Method forms the step of the first nano-pattern 10321 of splicing.The grating specifically can be metal grating polarizer (wire
Grid polarizer) namely WGP grating.
The embodiment of the present invention provides a kind of production method for realizing macro nanometer grating using photoetching process, and this method can
To realize that the high-precision joining of nanometer grating pattern and production, precision can reach hundred nano-scale even more on glass substrate
It is low.
The embodiment of the present invention also provides a kind of grating, is made using the production method of above-mentioned grating.
Unless otherwise defined, technical term or scientific term used in the present invention are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " used in the present invention and similar word
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." connection " or " connected "
It is not limited to physics or mechanical connection etc. similar word, but may include electrical connection, either directly
Or it is indirect."upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, when the absolute position for being described object
After setting change, then the relative positional relationship also correspondingly changes.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of joining method of nano-pattern characterized by comprising
Region deviding step: forming the first photoresist layer on the underlay substrate for being formed with the first film layer, right using photoetching process
First photoresist layer is patterned, formed the region to be patterned on the corresponding underlay substrate photoresist removal area and
The photoresist reserved area in other regions on the corresponding underlay substrate；
Photoresist reduction steps: the photoresist in the photoresist reserved area on first photoresist layer is thinned；
It imprints glue-line forming step: forming the coining glue-line with imprinted pattern, the coining glue-line on the underlay substrate
Cover the photoresist removal area and the part photoresist reserved area adjacent with photoresist removal area；
Etch step: using the imprinted pattern as exposure mask, first film layer in photoresist removal area is performed etching, shape
At the first nano-pattern；
Splicing step: the region deviding step, the photoresist reduction steps, coining glue-line forming step and quarter are repeated
Step is lost, the first nano-pattern of splicing is formed.
2. the joining method of nano-pattern according to claim 1, which is characterized in that the etch step includes:
Using the imprinted pattern as exposure mask, first film layer in photoresist removal area is performed etching, first is formed and receives
Before rice pattern, the second photoresist layer is formed on the underlay substrate；
Using photoetching process, second photoresist layer is patterned, is formed to be patterned on the corresponding underlay substrate
The photoresist removal area in region and the photoresist reserved area in other regions on the corresponding underlay substrate.
3. the joining method of nano-pattern according to claim 1 or 2, which is characterized in that the coining glue-line forms step
Suddenly include:
Coating coining glue, forms the coining glue-line in the soft template with the pattern complementary with the imprinted pattern；
The soft template for being formed with the coining glue-line above is transferred on the underlay substrate, the coining glue-line is close to
First film layer；
Remove the soft template.
4. the joining method of nano-pattern according to claim 1, which is characterized in that on the coining glue-line, the pressure
The size for being patterned shared region is greater than the size in the region to be patterned.
5. the joining method of nano-pattern according to claim 3, which is characterized in that the soft template is water-soluble poly-
Vinyl alcohol soft template.
6. the joining method of nano-pattern according to claim 1, which is characterized in that after the etch step, also wrap
It includes:
Remove remaining photoresist on the photoresist reserved area.
7. a kind of production method of nano impression plate, which is characterized in that including using such as of any of claims 1-6
The joining method of nano-pattern forms the step of the first nano-pattern of splicing.
8. a kind of production method of grating, which is characterized in that including using such as nanometer figure of any of claims 1-6
The joining method of case forms the step of the first nano-pattern of splicing.
9. a kind of nano impression plate, which is characterized in that using the production method production of nano impression plate as claimed in claim 7
At.
10. a kind of grating, which is characterized in that be made using the production method of grating according to any one of claims 8.
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