CN109490739B - Method and module for estimating junction temperature of insulated gate bipolar transistor module on line - Google Patents

Method and module for estimating junction temperature of insulated gate bipolar transistor module on line Download PDF

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CN109490739B
CN109490739B CN201811348746.6A CN201811348746A CN109490739B CN 109490739 B CN109490739 B CN 109490739B CN 201811348746 A CN201811348746 A CN 201811348746A CN 109490739 B CN109490739 B CN 109490739B
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李中兵
陈涵
王凯
苏谢祖
张政
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NIO Co Ltd
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Abstract

The application provides a method for estimating junction temperature of an insulated gate bipolar transistor module on line, wherein the insulated gate bipolar transistor module comprises an insulated gate bipolar transistor and a diode which are electrically connected, and the method comprises the following steps: determining a first power of the insulated gate bipolar transistor and determining a second power of the diode; calculating a first junction temperature of the insulated gate bipolar transistor based on the first power, and calculating a second junction temperature of the diode based on the second power; respectively correcting the first junction temperature and the second junction temperature based on a cooling water flow model to obtain the corrected first junction temperature and the corrected second junction temperature, wherein the cooling water flow model is established based on the relation between the cooling water flow and a heat load, and the cooling water refers to the cooling water for cooling the insulated bipolar transistor module; and taking the higher of the corrected first junction temperature and the corrected second junction temperature as the junction temperature of the insulated gate bipolar transistor module.

Description

Method and module for estimating junction temperature of insulated gate bipolar transistor module on line
Technical Field
The present invention relates to electronic devices, and more particularly, to a technique for on-line estimation of junction temperature of an insulated gate bipolar transistor module.
Background
The power semiconductor device is a main component of a power electronic system and is also a component with the highest failure rate in the system. The on-line estimation and detection of the module operation junction temperature have important significance for the safe operation and the health management of the power electronic system.
For calculating the junction temperature of, for example, an IGBT module, existing methods use either a hardware method or a software method. The hardware method is a method using hardware circuit detection, such as the method described in application No. CN 201410345265.5. The software method is mainly to calculate the junction temperature of the IGBT through a power loss and thermal resistance model of the IGBT module, for example, the method described in application No. CN 201611255694.9.
The hardware method needs additional hardware overhead, has a complex structure, is limited by the detection precision, the anti-interference capability and the like of the hardware, and the junction temperature estimation is not necessarily accurate.
When the software method is used for calculating the junction temperature, the electrical parameters depend on the parameters provided by a data manual of the IGBT module, and the parameters are measured under specific environments and are relatively ideal. The junction temperature of the IGBT is often influenced by parameters such as the hardware structure of the inverter, the cooling water temperature, and the water flow rate. In the field of industrial frequency conversion and electric automobiles, the working environment of the IGBT is severe, the working condition changes frequently, and the cooling water temperature and the water flow are difficult to be ensured in a fixed range. In this case, the junction temperature estimation of the existing schemes is often not accurate enough. In addition, in the existing scheme, the thermal impedance model is complex, the calculated amount is large, and the method is not suitable for quickly estimating the junction temperature of the IGBT.
Disclosure of Invention
The invention provides a method for estimating junction temperature of an insulated gate bipolar transistor module on line, which can realize more accurate estimation of the junction temperature of the insulated gate bipolar transistor module on line without changing hardware. The insulated gate bipolar transistor module comprises an insulated gate bipolar transistor and a diode, and the method comprises determining a first power of the insulated gate bipolar transistor and determining a second power of the diode; calculating a first junction temperature of the insulated gate bipolar transistor based on the first power, and calculating a second junction temperature of the diode based on the second power; respectively correcting the first junction temperature and the second junction temperature based on a cooling water flow model to obtain the corrected first junction temperature and the corrected second junction temperature, wherein the cooling water flow model is established based on the relation between the cooling water flow and a heat load, and the cooling water refers to the cooling water for cooling the insulated bipolar transistor module; and taking the higher of the corrected first junction temperature and the corrected second junction temperature as the junction temperature of the insulated gate bipolar transistor module.
Optionally, in the method for estimating the junction temperature of the igbt module on line, the first junction temperature and the second junction temperature are respectively corrected based on a cooling water flow model, so as to obtain a corrected first junction temperature and a corrected second junction temperature.
Optionally, in the method for estimating the junction temperature of the IGBT module on line, the greater of the first junction temperature and the second junction temperature is used as the junction temperature of the IGBT module.
Optionally, in the method for estimating the junction temperature of the igbt module online, the igbt module is applied to an electric vehicle, preferably to a motor controller of the electric vehicle. Alternatively, when the igbt module is applied to a motor controller, a plurality of igbt modules are provided and arranged in X rows and Y columns.
The present invention also provides a junction temperature estimation module for an insulated gate bipolar transistor module, comprising a processing unit and a memory unit for storing instructions, which when executed by the processing unit, implement any of the methods for junction temperature estimation of an insulated gate bipolar transistor module described herein.
Drawings
The disclosure of the present invention is illustrated with reference to the accompanying drawings. It is to be understood that the drawings are designed solely for the purposes of illustration and not as a definition of the limits of the invention. In the drawings, like reference numerals are used to refer to like parts. Wherein:
fig. 1 is a flow chart of a junction temperature calculation method according to an example of the invention;
FIG. 2 is a schematic diagram of the structure and application environment of the IGBT module;
fig. 3 is a thermal resistance model of an IGBT according to an example of the invention.
Detailed Description
It is easily understood that according to the technical solution of the present invention, a person skilled in the art can propose various alternative structural modes and implementation modes without changing the spirit of the present invention. Therefore, the following detailed description and the accompanying drawings are merely illustrative of the technical aspects of the present invention, and should not be construed as all of the present invention or as limitations or limitations on the technical aspects of the present invention.
Fig. 1 is a flow chart of a method for on-line estimation of junction temperature of an insulated gate bipolar transistor module for estimation of junction temperature of the insulated gate bipolar transistor module according to an example of the present invention. The insulated bipolar transistor module comprises an insulated gate bipolar transistor IGBT and a diode. According to the method, in step 100, the power loss of the insulated gate bipolar transistor IGBT and the power loss of the diode are calculated. In some descriptions of the present application, the power loss of the insulated bipolar transistor is also referred to as a first power and the power loss of the diode is also referred to as a second power. In step 102, the first power and the second power obtained in step 100 are used as inputs of a model (described below with reference to the model of fig. 2) of the thermal resistance network of the IGBT and the diode to obtain an estimated first junction temperature of the IGBT and a second junction temperature of the diode. In step 103, the first junction temperature and the second junction temperature are respectively corrected based on the cooling water flow model, so as to obtain a corrected first junction temperature and a corrected second junction temperature. In step 104, the higher of the corrected first junction temperature and the corrected second junction temperature is used as the junction temperature of the IGBT module.
Fig. 2 is a schematic diagram of the structure and application environment of the igbt module. In a non-limiting example of the present application, the insulated gate bipolar transistor module is applied in a motor controller of an electric vehicle. As shown, the IGBT module includes an IGBT (in the figure, the characters are labeled as IGBTs, and all the parameter subscripts are labeled as IGBTs indicating that the value characterized by the parameter is related to IGBTs) 30 and a Diode (in the figure, the characters are labeled as diodes, and all the parameter subscripts are labeled as diodes indicating that the value characterized by the parameter is related to diodes) 40 electrically connected to the IGBT. In the example of this figure, cold is also includedBut water conduit 34. The water flow in the cooling water pipeline comes from a water cooling system of the whole vehicle, and the cooling water flows through the insulated gate bipolar transistor module to be used for cooling the insulated gate bipolar transistor module, and then flows out of the motor controller to return to the cooling water system of the whole vehicle. In some specific examples, a plurality of igbt modules are arranged in the motor controller in an X row and Y column manner, for example, in a 2 row and 3 row manner, and in such an example, the cooling water pipeline simultaneously cools a plurality of igbt modules in the same row or a plurality of igbt modules in the same column. In FIG. 2, Ploss，IGBTAnd Ploss，DiodePower loss, P, of a single IGBT and Diode, respectivelyloss，halfbrightFor power loss of the half-bridge of the IGBT module, Zth，IGBT,Zth，Diode,Zth，CoolantThe thermal impedances of the IGBT, Diode and cooling water respectively,
Figure BDA0001864392680000031
which is the IGBT, the Diode and the cooling water, with respect to the temperature difference of the temperature sensor 32, which in this case is an NTC temperature sensor, i.e. a temperature sensor with a negative temperature coefficient, the abbreviation NTC being also used directly below.
The process of calculating the power loss of the IGBT will be described first. Simply put, the power loss of an IGBT is divided into conduction loss and switching loss, and then the total loss of the IGBT is the sum of the two, that is:
Ploss,IGBT＝Ploss,IGBT,cond+Ploss,IGBT,swi (1)
the conduction loss is determined according to the formula (2), and specifically comprises the following steps:
Figure BDA0001864392680000032
the switching loss is determined according to formula (3), specifically:
Figure BDA0001864392680000041
the total loss is determined by equation (1), which is specifically expressed by the following equation:
Figure BDA0001864392680000042
in the above equations (1) to (4), m is a modulation ratio,
Figure BDA0001864392680000043
in order to be the power factor of the power,
Figure BDA0001864392680000044
for the amplitude of the current through the IGBT module, UceFor the turn-on saturation voltage drop of IGBT, RCEIs the on-equivalent resistance, U, of the IGBTceAnd RCECan be found by an IGBT data manual. ZetaIGBTFor the correction factor of the PWM frequency to the IGBT, increasing with increasing PWM frequency, fPWMFor PWM switching frequency, Eon,IGBT(Un,In) And Eon,IGBT(Un,In) Switching losses, U, at the instant of a single turn-on and turn-off of the IGBT, respectivelyDCFor bus voltage, UnAnd InNominal bus voltage and current values given for the IGBT data manual respectively, ku and ki are voltage and current indexes of switching loss, and values can be generally between 1 and 1.5 according to recommended values of the IGBT data manual.
The power loss of the diode is calculated by combining equations (5) to (8) below. In short, similar to the power loss of an IGBT, the power loss of the diode is also divided into conduction loss and switching loss, and then the total loss of the IGBT is the sum of the two, namely:
Ploss,Diode＝Ploss,Diode,cond+Ploss,Diode,swi (5)
the conduction loss is calculated according to equation (6) as follows:
Figure BDA0001864392680000045
the switching loss is calculated according to equation (7) as follows: :
Figure BDA0001864392680000046
the total loss is as shown in formula (5), specifically formula (8), and is:
Figure BDA0001864392680000051
in equations (5) to (8), m is a modulation ratio,
Figure BDA0001864392680000052
in order to be the power factor of the power,
Figure BDA0001864392680000053
for the amplitude of the current through the IGBT module, UD,fIs the conduction saturation voltage drop of the Diode, RD,fIs the on-equivalent resistance of the Diode, UD,fAnd RD,fCan be found by an IGBT data manual. ZetaDiodeThe correction factor for the frequency of PWM to the Diode increases with the increase of the PWM frequency, fPWMFor PWM switching frequency, Eon,Diode(Un,In) And Eoff,Diode(Un,In) Switching losses, U, at the moment of a single turn-on and turn-off of the Diode, respectivelyDCFor bus voltage, UnAnd InNominal bus voltage and current values given for the IGBT data manual respectively, ku and ki are voltage and current indexes of switching loss, and values can be generally between 1 and 1.5 according to recommended values of the IGBT data manual.
The model of the thermoresistive network in step 102 is illustrated. The thermal resistance model is shown in fig. 3, and comprises 4 series-connected RC networks, and the model is equivalent to the thermal resistance network of the IGBT. Wherein R isth，1，Rth,2，Rth,3，Rth,4And Cth，1，Cth,2，Cth,3，Cth,4Are respectively 1-4 order thermal resistance networkAnd looking up a data manual of the IGBT to perform curve fitting to obtain the parameters. Therefore, the calculation formula of the temperature difference relative to the NTC can be obtained as follows:
Figure BDA0001864392680000054
Figure BDA0001864392680000055
Figure BDA0001864392680000056
Figure BDA0001864392680000057
Figure BDA0001864392680000058
the temperature difference of the 1-4 order thermal resistance network relative to the NTC is calculated by the formulas (9), (10), (11) and (12) respectively. Calculated by equation (13)
Figure BDA0001864392680000059
Then is the total temperature difference for that model. To obtain
Figure BDA00018643926800000510
Then, the cooling water temperature can be corrected according to the cooling water temperature, and a correction coefficient tau is introducedIGBTNamely:
Figure BDA00018643926800000511
wherein the content of the first and second substances,
Figure BDA00018643926800000512
is the corrected total temperature difference. In specific implementation, τ can be obtained by looking up a table according to the water temperature valueIGBTThe value is obtained.
The method for estimating the junction temperature of the diode is similar to that of the IGBT and is not described in detail.
A cooling water flow model in step 103 is illustrated, which is established based on the relationship between the cooling water flow and the thermal load. The relationship between the cooling water flow rate and the heat load is shown in equation (14), which is:
Figure BDA0001864392680000061
in the formula (14), G is the cooling water flow rate, P is the heat load, c is the specific heat capacity, and Δ t is the temperature difference. Then there are: the cooling water flow is inversely proportional to the temperature difference, the larger the flow, the smaller the temperature difference. Therefore, a standard water flow rate can be set as a reference (e.g., 10L/min), and the ratio of the actual water flow rate to the standard water flow rate can be set as a reference
Figure BDA0001864392680000062
And
Figure BDA0001864392680000063
the correction coefficient of (a) is:
Figure BDA0001864392680000064
Figure BDA0001864392680000065
wherein G isrealIs the actual water flow, GbaseAs a reference water flow rate, gIGBT，gDiodeThe correction coefficients for the IGBT and the diode, respectively, can be obtained by comparing the actual junction temperature collected by the thermal imager in the bench test with the estimated junction temperature, and correcting the correction coefficients, which will be described below.
Therefore, the final junction temperatures of the IGBT and the diode are obtained by equations (15) and (16), respectively:
Figure BDA0001864392680000066
Figure BDA0001864392680000067
from the above analysis, it can be known that the junction temperatures of the IGBT and the diode are the calculation results of the formula (15) and the formula (16), respectively
Figure BDA0001864392680000068
And
Figure BDA0001864392680000069
finally, selecting
Figure BDA00018643926800000610
And
Figure BDA00018643926800000611
the larger of the two is taken as the junction temperature of the IGBT module.
In consideration of the fact that errors exist between theoretical parameters and actual parameters during implementation, and due to the influence of the temperature of cooling water, the structure of a water channel and the like, errors exist between the estimated junction temperature and the actual junction temperature, so that after the hardware design and the cooling scheme are determined, the actual junction temperature of the IGBT module can be acquired on a test bench through a thermal imager, and parameters of a PWM frequency coefficient, a water temperature coefficient of the cooling water and a water flow coefficient of the cooling water can be corrected conveniently. The manner in which this modified parameter is used will be described below in connection with an example. Specifically, in order to make the junction temperature estimation of the IGBT module more accurate, a correction coefficient zeta of a thermal imager to the PWM switching frequency is usedIGBTAnd ζDiodeCorrection coefficient of water temperature τIGBTAnd τDiodeAnd correction factor g of water flowIGBT，gDiodeA determination is made. The correction process is as follows:
(1) during the test of the test bench, the water flow and the water temperature of the cooling water are firstly fixed, for example (10L/min, 25 ℃), the motor controller is operated, the junction temperature of the IGBT module is monitored by using a thermal imager, and the test is carried outKeeping the bus voltage unchanged, outputting the same current amplitude and frequency by the motor controller, changing the PWM switching frequency, observing the junction temperature of the IGBT module monitored by the thermal imager, and simultaneously adjusting zetaIGBT，ζDiodeSo that the calculated junction temperature is the same as the actual junction temperature (within 0.5 ℃), and zeta is drawnIGBT，ζDiodeTable as a function of frequency. And this table is imported into the algorithm as a calibration coefficient. And the PWM switch is used for controlling the on-off of the IGBT module.
(2) On the basis of the test in (1), fixing the PWM switching frequency and the cooling water flow, changing the cooling water temperature, and simultaneously adjusting the correction coefficient tau of the cooling water temperatureIGBT，τDiodeLet the calculated junction temperature be the same as the actual junction temperature, let τ beIGBT，τDiodeA table that varies with water temperature and is introduced into the algorithm as a calibration factor.
(3) On the basis of the test in (2), the switching frequency and the cooling water temperature are fixed, the cooling water flow is changed, and meanwhile, the correction coefficient g of the cooling water flow is adjustedIGBT，gDiodeSuch that the calculated junction temperature is the same as the actual junction temperature, g is madeIGBT，gDiodeA table that varies with water flow and is introduced into the algorithm as a calibration coefficient.
The present application further provides a junction temperature estimation module for an insulated bipolar transistor module comprising a processing unit and a memory unit for storing instructions which, when executed by the processing unit, implement the example method. In one particular example, the junction temperature estimation module of the igbt module is implemented in a motor controller.
It should be noted that the above method for estimating the junction temperature of the igbt module can be implemented in a motor controller of an electric vehicle. Similarly, the junction temperature estimation module of the insulated gate bipolar transistor module can also be implemented in a control component outside a motor controller of an electric vehicle. And it should be noted that the water temperature of the cooling water is the data that would be collected in the electric vehicle, and this data can be directly acquired in the present application without providing a sensing component.
Through the junction temperature estimation and coefficient correction described in the processes of the labels from (1) to (3), the junction temperature of the IGBT can be estimated on line under various working conditions, and when the junction temperature of the IGBT is too high, a system is prompted to take derating measures or enter a fault mode to protect the IGBT module. The above-described correction coefficients have been used in the method in connection with fig. 1.
According to the method provided by the application, the information of the water temperature and the water flow is introduced into the calculation of the junction temperature, so that the junction temperature of the IGBT module used in the vehicle can be estimated more accurately. And the related parameters are calibrated, and the calibration parameters are introduced into the whole estimation method, so that the accuracy is ensured.
The technical scope of the present invention is not limited to the above description, and those skilled in the art can make various changes and modifications to the above-described embodiments without departing from the technical spirit of the present invention, and such changes and modifications should fall within the protective scope of the present invention.

Claims (10)

1. A method for estimating junction temperature of an insulated gate bipolar transistor module on line, wherein the insulated gate bipolar transistor module comprises an insulated gate bipolar transistor and a diode which are electrically connected, and the method comprises the following steps:
determining a first power of the insulated gate bipolar transistor and determining a second power of the diode;
calculating a first junction temperature of the insulated gate bipolar transistor based on the first power, and calculating a second junction temperature of the diode based on the second power;
respectively correcting the first junction temperature and the second junction temperature based on a cooling water flow model to obtain the corrected first junction temperature and the corrected second junction temperature, wherein the cooling water flow model is established based on the relation between the cooling water flow and a heat load, and the cooling water refers to the cooling water for cooling the insulated bipolar transistor module; and
taking the higher of the corrected first junction temperature and the corrected second junction temperature as the junction temperature of the insulated gate bipolar transistor module;
the corrected first junction temperature and the corrected second junction temperature are respectively shown as the following formulas (15) and (16):
θIGBT(k)＝θNTC(k)+ΔθIGBT,cor(k) (15)
θDiode(k)＝θNTC(k)+ΔθDiode,cor(k) (16)
wherein, thetaIGBT(k) Is said corrected first junction temperature, θDiode(k) Is said corrected second junction temperature, Δ θIGBT，cor(k) Is the temperature difference, Delta theta, of the IGBT with respect to the temperature sensorDiode，cor(k) Is the temperature difference of the diode with respect to the temperature sensor, and
Figure FDA0002792550620000011
Figure FDA0002792550620000012
ΔθIGBTis the actual value of the temperature difference, Delta theta, of the IGBT with respect to the temperature sensorDiode(k) Is the actual value of the temperature difference of the diode relative to the temperature sensor; gIGBTAnd gDiodeCorrection coefficients of the insulated gate bipolar transistor and the diode are respectively; grealAnd GbaseThe actual and base water flow rates of the cooling water, respectively.
2. The method for estimating the junction temperature of the igbt module according to claim 1, wherein the first power of the igbt is a sum of a conduction loss and a switching loss, the conduction loss is determined according to the following formula (2), and the switching loss is determined according to the following formula (3):
Figure FDA0002792550620000021
Figure FDA0002792550620000022
in the formula (2), m is a modulation ratio,
Figure FDA0002792550620000023
in order to be the power factor of the power,
Figure FDA0002792550620000024
for the amplitude of the current through the IGBT module, UceFor the turn-on saturation voltage drop of IGBT, RCEIs the on-equivalent resistance, U, of the IGBTceAnd RCECan be found through an IGBT data manual;
in the formula (3), ζIGBTFor the correction factor of the PWM frequency to the IGBT, increasing with increasing PWM frequency, fPWMFor PWM switching frequency, Eon,IGBT(Un,In) And Eon,IGBT(Un,In) Switching losses, U, at the instant of a single turn-on and turn-off of the IGBT, respectivelyDCFor bus voltage, UnAnd InNominal bus voltage and current values given for the IGBT data manual respectively, ku and ki are voltage and current indexes of switching loss, and values can be generally between 1 and 1.5 according to recommended values of the IGBT data manual.
3. The method of on-line estimation of junction temperature of an igbt module according to claim 1, wherein the second power of the diode is the sum of conduction loss and switching loss of the diode, and determining the second power of the diode comprises determining the conduction loss according to equation (6), and determining the switching loss according to equation (7):
Figure FDA0002792550620000025
Figure FDA0002792550620000026
in the formula (6), m is a modulation ratio,
Figure FDA0002792550620000027
in order to be the power factor of the power,
Figure FDA0002792550620000028
for the amplitude of the current through the IGBT module, UD,fIs the conduction saturation voltage drop of the Diode, RD,fIs the on-equivalent resistance of the Diode, UD,fAnd RD,fCan be found through an IGBT data manual;
in the formula (7), ζDiodeThe correction factor for the frequency of PWM to the Diode increases with the increase of the PWM frequency, fPWMFor PWM switching frequency, Eon,Diode(Un,In) And Eoff,Diode(Un,In) Switching losses, U, at the moment of a single turn-on and turn-off of the Diode, respectivelyDCFor bus voltage, UnAnd InNominal bus voltage and current values given for the IGBT data manual respectively, ku and ki are voltage and current indexes of switching loss, and values can be generally between 1 and 1.5 according to recommended values of the IGBT data manual.
4. The method of claim 1, wherein calculating a first junction temperature of the igbt based on the first power and a second junction temperature of the diode based on the second power comprises:
and taking the obtained first power and the second power as the input of a thermal resistance network model of the insulated gate bipolar transistor and the diode, and obtaining the estimated first junction temperature of the IGBT and the second junction temperature of the diode.
5. The method for estimating the junction temperature of the igbt module according to claim 1 or 4, wherein the first junction temperature and the second junction temperature are corrected based on a cooling water flow model, respectively, to obtain a corrected first junction temperature and a corrected second junction temperature.
6. The method for estimating the junction temperature of the IGBT module according to claim 1 or 4, wherein the greater of the first junction temperature and the second junction temperature is taken as the junction temperature of the IGBT module.
7. The method for on-line estimation of junction temperature of an insulated gate bipolar transistor module as claimed in claim 1, wherein the insulated gate bipolar transistor module is applied in an electric vehicle, preferably in a motor controller of the electric vehicle.
8. The method for estimating the junction temperature of the igbt module in-line as claimed in claim 7, wherein when the igbt module is used in a motor controller, a plurality of igbt modules are provided and arranged in X rows and Y columns.
9. A junction temperature estimation module for an insulated gate bipolar transistor module comprising a processing unit and a memory unit for storing instructions which, when executed by the processing unit, implement a junction temperature estimation method as claimed in any one of claims 1 to 6.
10. The junction temperature estimation module for an insulated gate bipolar transistor module of claim 9, implemented in a motor controller.
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