CN109490739A - The method and module of estimation on line are carried out to the junction temperature of IGBT module - Google Patents
The method and module of estimation on line are carried out to the junction temperature of IGBT module Download PDFInfo
- Publication number
- CN109490739A CN109490739A CN201811348746.6A CN201811348746A CN109490739A CN 109490739 A CN109490739 A CN 109490739A CN 201811348746 A CN201811348746 A CN 201811348746A CN 109490739 A CN109490739 A CN 109490739A
- Authority
- CN
- China
- Prior art keywords
- junction temperature
- igbt
- diode
- igbt module
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
The application provides the method for carrying out estimation on line to the junction temperature of IGBT module, the IGBT module includes the insulated gate bipolar transistor and diode being electrically connected, this method comprises: determining the first power of the insulated gate bipolar transistor, and determine the second power of the diode；Based on the first junction temperature of first power calculation insulated gate bipolar transistor, and the second junction temperature based on second power calculation diode；First junction temperature is modified respectively with the second junction temperature based on cooling water flow model, obtain revised first junction temperature and revised second junction temperature, wherein, the cooling water flow model is the relationship based on the cooling water flow and thermic load and establishes that the cooling water refers to carrying out cooling cooling water to the insulation bipolar type transistor module；And using the higher person in revised first junction temperature and revised second junction temperature as the junction temperature of the IGBT module.
Description
Technical field
The present invention relates to electronic devices, more specifically, are related to carrying out the junction temperature of IGBT module
The technology of estimation on line.
Background technique
Power semiconductor is the highest portion of crash rate in the chief component and system of power electronic system
Part.The estimation on line that module runs junction temperature has the safe operation of such power electronic system and health control with detection important
Meaning.
For calculating such as junction temperature of insulated gate bipolar transistor IGBT module, existing method or use hardware
Method uses Software Method.Hardware Method is detected using hardware circuit, such as application No. is the applications of CN201410345265.5
Method described in file.Software Method is mainly power loss and thermal resistance model by IGBT module to calculate the knot of IGBT
Temperature, such as application No. is the methods described in CN201611255694.9.
Hardware approach needs additional hardware spending, and structure is complicated, and is limited to the detection accuracy of hardware, anti-interference energy
Power etc., junction temperature estimation may not be accurate.
Software Method is when calculating junction temperature, the parameter that electric parameter is provided dependent on the databook of IGBT module, these ginsengs
Number measures in certain circumstances, more satisfactoryization.And the junction temperature of IGBT is often by the hardware configuration of inverter, cooling water
The influence of the parameters such as temperature, water flow.In industrial frequency conversion, electric car field, the working environment of IGBT is more severe, operating condition variation
Also relatively frequently, coolant water temperature, water flow are more difficult to be guaranteed in fixed range.In this case, the junction temperature of existing scheme is estimated past
It is past not accurate enough.In addition, thermal impedance model is complicated, and calculation amount is larger in existing scheme, be not suitable for quickly estimating for IGBT junction temperature
It calculates.
Summary of the invention
The present invention provides the method for carrying out estimation on line to the junction temperature of IGBT module, without to hard
Part is modified, can relatively accurate estimation of the canbe used on line to the junction temperature of IGBT module.The insulated gate bipolar
Transistor npn npn module includes insulated gate bipolar transistor and diode, and this method includes determining the insulated gate bipolar transistor
The first power, and determine the diode the second power；Based on first power calculation insulated gate bipolar transistor
The first junction temperature, and the second junction temperature based on second power calculation diode；Based on cooling water flow model to described
First junction temperature is modified respectively with the second junction temperature, obtains revised first junction temperature and revised second junction temperature, wherein institute
Stating cooling water flow model is the relationship based on the cooling water flow and thermic load and establishes, and the cooling water refers to pair
The insulation bipolar type transistor module carries out cooling cooling water；And by revised first junction temperature and revised second knot
Junction temperature of the higher person of middle benefit gas as the IGBT module.
Optionally, the junction temperature to IGBT module carries out in the method for estimation on line, based on cold
But water flow model is modified first junction temperature with the second junction temperature respectively, after obtaining revised first junction temperature and amendment
The second junction temperature.
Optionally, the junction temperature to IGBT module carries out in the method for estimation on line, will be described
Junction temperature of the greater as the IGBT module in first junction temperature and second junction temperature.
Optionally, the junction temperature to IGBT module carries out in the method for estimation on line, described exhausted
Edge grid bipolar type transistor module is used in electric vehicle, is preferably used in the electric machine controller of electric vehicle.Optionally, when
When the IGBT module is used in electric machine controller, it is provided with multiple insulated gate bipolar transistors
Module, and they are arranged by the form arranged with X row Y.
The present invention also provides the junction temperature estimation blocks for IGBT module comprising processing unit with
Storage unit, the storage unit for storing instruction, when described instruction is executed by the processing unit, use described herein
Any one in the method that the junction temperature of IGBT module is estimated is implemented.
Detailed description of the invention
It is explained with reference to the disclosure.It is to be appreciated that attached drawing is merely illustrative purpose, and not anticipate
It is construed as limiting to protection scope of the present invention.In the accompanying drawings, identical appended drawing reference is for referring to identical component.Wherein:
Fig. 1 is the flow chart of exemplary junction temperature calculation method according to the present invention；
Fig. 2 is that the structure of the IGBT module and application environment show meaning；
Fig. 3 is the thermal resistance model of exemplary IGBT according to the present invention.
Specific embodiment
It is readily appreciated that, according to the technique and scheme of the present invention, in the case where not changing true spirit, the general skill of this field
Art personnel can propose the various structures mode and implementation being replaced mutually.Therefore, following specific embodiments and attached
Figure is only the exemplary illustration to technical solution of the present invention, and is not to be construed as whole of the invention or is considered as to the present invention
Technical solution defines or limits.
Fig. 1 is the method that the exemplary junction temperature to IGBT module carries out estimation on line according to the present invention
Flow chart, this method be used for insulation bipolar type transistor module junction temperature estimation.The insulation bipolar type transistor module
Including insulated gate bipolar transistor IGBT and diode.According to this method, in step 100, insulated gate bipolar crystalline substance is calculated
The power loss of body pipe IGBT and the power loss for calculating the diode.It, also will insulation pair in some descriptions of the application
The power loss of bipolar transistor is referred to as the first power and the power loss of the diode is known as the second power.In step 102,
The first power obtained in step 100 (is hereafter tied with the second power as the thermal resistance network model of the IGBT and diode
Close Fig. 2 model be described) input, with obtain estimation the IGBT the first junction temperature and the diode the second knot
Temperature.In step 103, based on cooling water flow model first junction temperature is modified respectively with the second junction temperature, is corrected
The first junction temperature and revised second junction temperature afterwards.In step 104, by revised first junction temperature and revised second junction temperature
In junction temperature of the higher person as the IGBT module.
Fig. 2 is that the structure of IGBT module and application environment show meaning.The application's
In non-limiting example, which is applied in the electric machine controller of electric vehicle.As shown, should
IGBT module includes that (text is identified as IGBT to IGBT in figure, and hereinafter all parameter subscripts mark IGBT
Show value that the parameter is characterized and IGBT in relation to) 30 and the diode that is electrically connected with the IGBT (text is identified as in figure
Diode, hereinafter the value for showing that the parameter is characterized of all parameter subscript mark Diode is related with diode) 40.In the figure
Example in, further include cooling water pipeline 34.Water-cooling system of the water flow from vehicle in cooling water pipeline, cooling water flow through this
IGBT module is for cooling down it, and later, meeting outflow motor controller revert to the cooling of vehicle
In water system.In some specific examples, the IGBT module have it is multiple, by by X row Y column in a manner of cloth
It sets in electric machine controller, such as is arranged in electric machine controller in a manner of 2 row, 3 row, in such an example, cooling water pipe
Road can cool down multiple IGBT modules in the multiple or same row with a line simultaneously.In Fig. 2, PLoss, IGBT
And PLoss, DiodeThe power loss of respectively single IGBT and Diode, PLoss, halfbrightIt is damaged for the power of IGBT module half-bridge
Consumption, ZTh, IGBT,ZTh, Diode,ZTh, CoolantThe thermal impedance of respectively IGBT, Diode and cooling water,For IGBT, the temperature difference of Diode and cooling water relative to temperature-sensitive sticker 32, in this example
In, which is NTC temperature-sensitive sticker, that is, the temperature-sensitive sticker with negative temperature coefficient hereafter can also directly adopt
Abridge NTC.
The process for calculating the power loss of the IGBT will be introduced first below.Briefly, the power loss of IGBT is divided into
Conduction loss and switching loss, then the total losses of IGBT both be then and, it may be assumed that
Ploss,IGBT=Ploss,IGBT,cond+Ploss,IGBT,swi (1)
Conduction loss is determining according to formula (2), specifically:
Switching loss is determining according to formula (3), specifically:
Total losses are then determined such as formula (1), shown in the formula in face specific as follows:
For above formula (1) in (4), m is modulation ratio,For power factor,For by the current amplitude of IGBT module,
UceFor the conducting saturation voltage drop of IGBT, RCEFor the conducting equivalent resistance of IGBT, UceAnd RCEIt can be checked in by IGBT databook.
ζIGBTIt is PWM frequency to the correction factor of IGBT, increases, f with the increase of PWM frequencyPWMFor PWM switching frequency, Eon,IGBT
(Un,In) and Eon,IGBT(Un,In) it is respectively the conducting of IGBT single and the switching loss of shutdown moment, UDCFor busbar voltage, UnWith
InThe respectively given nominal busbar voltage of IGBT databook and current value, ku, ki are that voltage, the electric current of switching loss refer to
Number, can be according to the recommendation value of IGBT databook, generally between 1~1.5.
The power loss of the diode is calculated to (8) below in conjunction with formula (5).Briefly, with the power loss of IGBT
Similar, the power loss of the diode is also classified into conduction loss and switching loss, then the total losses of IGBT are then the two
With, it may be assumed that
Ploss,Diode=Ploss,Diode,cond+Ploss,Diode,swi (5)
Conduction loss is calculated according to formula (6), specific as follows:
Switching loss is calculated according to formula (7), specific as follows::
Total losses are specific as shown in formula (8) then according to formula (5), are as follows:
In formula (5) to formula (8), m is modulation ratio,For power factor,To pass through the electric current width of IGBT module
Value, UD,fFor the conducting saturation voltage drop of Diode, RD,fFor the conducting equivalent resistance of Diode, UD,fAnd RD,fIGBT data hand can be passed through
Volume checks in.ζDiodeIt is PWM frequency to the correction factor of Diode, increases, f with the increase of PWM frequencyPWMFor PWM switching frequency,
Eon,Diode(Un,In) and Eoff,Diode(Un,In) it is respectively the conducting of Diode single and the switching loss of shutdown moment, UDCFor bus
Voltage, UnWith InThe respectively given nominal busbar voltage of IGBT databook and current value, ku, ki be switching loss voltage,
Current index, can be according to the recommendation value of IGBT databook, generally between 1~1.5.
Illustrate thermal resistance network model in step 102.The thermal resistance model is as shown in figure 3, it includes 4 concatenated RC nets
Network, the model are equivalent to the thermal resistance network of the IGBT.Wherein, RTh, 1, Rth,2, Rth,3, Rth,4And CTh, 1, Cth,2, Cth,3, Cth,4Point
Not Wei 1~4 rank thermal resistance network thermal resistance value and thermal capacitance value, the databook for consulting the IGBT carries out curve fitting to obtain these ginsengs
Number.Therefore, available its is respectively as follows: relative to the calculation formula of the NTC temperature difference
Wherein, formula (9), (10), (11), (12) calculate separately the temperature difference of 1~4 rank thermal resistance network relative to NTC.Formula (13)
RequiredIt is then the total temperature difference of the model.It obtainsAfterwards, it can be modified according to coolant water temperature,
Introduce correction factor τIGBT, it may be assumed thatWherein,For revised total temperature difference.Tool
When body is implemented, it can be tabled look-up to obtain τ according to water temperature valueIGBTValue.
The junction temperature evaluation method of diode is similar with IGBT, does not just repeat one by one.
Illustrate the cooling water flow model in step 103, the cooling water flow model be based on cooling water flow and
What the relationship of thermic load was established.Shown in the relationship of cooling water flow and thermic load such as formula (14), are as follows:
In formula (14), G is cooling water flow, and P is thermic load, and c is specific heat capacity, and Δ t is the temperature difference.Then have: cooling water flow with
The temperature difference is inversely proportional, and flow is bigger, and the temperature difference is smaller.Therefore, it can set on the basis of standard water flow (such as 10L/min), with reality
The conduct pair of the ratio of border water flow and standard water flowWithCorrection factor, it may be assumed that
Wherein, GrealFor practical water flow, GbaseFor benchmark water flow, gIGBT, gDiodeRespectively for IGBT and diode
Correction factor can acquire virtual junction temperature by thermal imaging system in bench test and be modified to obtain with estimation junction temperature comparison, under
Text will be explained.
Therefore, the junction temperature of final IGBT and diode is obtained by formula (15) with (16) respectively:
From above analysis it is recognised that the junction temperature of IGBT and diode is respectively the calculating of formula (15) and formula (16)
As a resultWithFinally, selectionWithJunction temperature of the middle the greater as the IGBT module.
In view of when it is implemented, theoretical parameter is with actual parameter, there are errors, and by cooling water temperature, channel structure
Deng influence, estimated junction temperature can be made with virtual junction temperature, and there are errors, therefore, after hardware design and cooling scheme determine,
The true junction temperature of IGBT module can be acquired, by thermal imaging system on testboard bay so as to the water to PWM frequency coefficient, cooling water
The water flow coefficient of discharge progress parameters revision of warm coefficient, cooling water.The revised parameter is used below in conjunction with illustrating
Mode.Specifically, it is more accurate to estimate the junction temperature of the IGBT module, PWM switching frequency is repaired using thermal imaging system
Positive coefficient ζIGBTWith ζDiode, the correction factor τ of water temperatureIGBTWith τDiodeAnd the correction factor g of water flowIGBT, gDiodeIt carries out true
It is fixed.Makeover process is as follows:
(1) when testboard bay is tested, cooling water flow and water temperature, such as (10L/min, 25 DEG C) are first fixed, runs motor
Controller keeps busbar voltage constant when test, electric machine controller output phase using the junction temperature of thermal imaging system monitoring IGBT module
Same current amplitude and frequency, changes PWM switching frequency, and the junction temperature for the IGBT module that observation thermal imaging system monitors is adjusted simultaneously
Whole ζIGBT, ζDiode, so that the junction temperature calculated is identical as virtual junction temperature (error is within 0.5 DEG C), make ζIGBT, ζDiodeWith frequency
The table of variation.And it is imported into algorithm using this table as calibration coefficient.PWM switch is used to control the on-off of the IGBT module.
(2) on the basis of the test of (1), fixed PWM switching frequency and cooling water flow change coolant water temperature, while adjusting cold
But water temperature correction factor τIGBT, τDiode, so that the junction temperature calculated is identical as virtual junction temperature, make τIGBT, τDiodeChange with water temperature
Table, and imported into algorithm using this table as calibration coefficient.
(3) on the basis of the test of (2), fixed switching frequency and coolant water temperature change cooling water flow, while adjusting cooling water
Flow modificatory coefficient gIGBT, gDiode, so that the junction temperature calculated is identical as virtual junction temperature, make gIGBT, gDiodeChange with water flow
Table, and imported into algorithm using this table as calibration coefficient.
The application also provides the junction temperature estimation block for the bipolar type transistor module that insulate comprising processing unit with deposit
Storage unit, the storage unit for storing instruction, when described instruction is executed by the processing unit, the exemplary method
It is implemented.In a specific example, the junction temperature estimation block of the IGBT module is implemented in motor control
In device processed.
It should be noted that the method that the above-mentioned junction temperature to IGBT module is estimated, not only
It can only be implemented in the electric machine controller of electric vehicle.Similarly, the junction temperature estimation of the IGBT module
Module also can be implemented in the control unit other than the electric machine controller of electric vehicle.And it is pointed out that the water of cooling water
Temperature is the data that electric vehicle Central Plains will be acquired, and can directly acquire the data in the application, without sensing part is arranged.
It, can be in various operating conditions by above-mentioned marked as the estimation of junction temperature described in (1) to (3) process and coefficient amendment
The junction temperature of lower estimation on line IGBT, and prompt system takes the measure of drop volume or enters fault mode to protect when IGBT junction temperature is excessively high
Protect IGBT module.Above-mentioned correction factor is used in the method for combining Fig. 1.
Water temperature, flow information are introduced into the calculating to junction temperature by method provided by the present application, this is to used in vehicle
It is more accurate for the estimation of IGBT module junction temperature.And the application also calibrates relevant parameter, draws in entire evaluation method
Enter calibration parameter, it is ensured that accuracy.
Technical scope of the invention is not limited solely to the content in above description, and those skilled in the art can not take off
Under the premise of from technical thought of the invention, many variations and modifications are carried out to above-described embodiment, and these deformations and modification should all
In belonging to the scope of protection of the present invention.
Claims (10)
1. the method that the junction temperature of a kind of pair of IGBT module carries out estimation on line, the insulated gate bipolar crystal
Tube module includes the insulated gate bipolar transistor and diode being electrically connected, this method comprises:
It determines the first power of the insulated gate bipolar transistor, and determines the second power of the diode；
Based on the first junction temperature of first power calculation insulated gate bipolar transistor, and should based on second power calculation
Second junction temperature of diode；
Based on cooling water flow model first junction temperature is modified respectively with the second junction temperature, obtains revised first knot
Warm and revised second junction temperature, wherein the cooling water flow model is the pass based on the cooling water flow and thermic load
It is and establishes, the cooling water refers to carrying out cooling cooling water to the insulation bipolar type transistor module；And
Using the higher person in revised first junction temperature and revised second junction temperature as the insulated gate bipolar transistor mould
The junction temperature of block.
2. the method for carrying out estimation on line to the junction temperature of IGBT module as described in claim 1, wherein
First power of the insulated gate bipolar transistor be conduction loss and switching loss and, the conduction loss is according to public affairs as follows
Formula (2) determines, and the switching loss determines according to the following formula (3):
In formula (2), m is modulation ratio,For power factor,To pass through the current amplitude of IGBT module, UceFor IGBT's
Saturation voltage drop, R is connectedCEFor the conducting equivalent resistance of IGBT, UceAnd RCEIt can be checked in by IGBT databook.
In formula (3), ζIGBTIt is PWM frequency to the correction factor of IGBT, increases, f with the increase of PWM frequencyPWMFor PWM switch
Frequency, Eon,IGBT(Un,In) and Eon,IGBT(Un,In) it is respectively the conducting of IGBT single and the switching loss of shutdown moment, UDCFor mother
Line voltage, UnWith InThe respectively given nominal busbar voltage of IGBT databook and current value, ku, ki are the electricity of switching loss
Pressure, current index, can be according to the recommendation value of IGBT databook, generally between 1~1.5.
3. the method for carrying out estimation on line to the junction temperature of IGBT module as described in claim 1, wherein
Second power of the diode be the diode conduction loss and switching loss and, determine the second power packet of the diode
It includes and determines conduction loss according to formula (6), and determine switching loss according to formula (7):
In formula (6), m is modulation ratio,For power factor,To pass through the current amplitude of IGBT module, UD,fFor Diode
Conducting saturation voltage drop, RD,fFor the conducting equivalent resistance of Diode, UD,fAnd RD,fIt can be checked in by IGBT databook.
In formula (7), ζDiodeIt is PWM frequency to the correction factor of Diode, increases, f with the increase of PWM frequencyPWMIt is opened for PWM
Close frequency, Eon,Diode(Un,In) and Eoff,Diode(Un,In) it is respectively the conducting of Diode single and the switching loss of shutdown moment, UDC
For busbar voltage, UnWith InRespectively the given nominal busbar voltage of IGBT databook and current value, ku, ki are switching loss
Voltage, current index, can be according to the recommendation value of IGBT databook, generally between 1~1.5.
4. the method for carrying out estimation on line to the junction temperature of IGBT module as described in claim 1, wherein
Based on the first junction temperature of first power calculation insulated gate bipolar transistor, and it is based on second power calculation, two pole
Second junction temperature of pipe includes:
Using obtained first power and the second power as the thermal resistance network of the insulated gate bipolar transistor and the diode
The input of model obtains the first junction temperature of the IGBT of estimation and the second junction temperature of the diode.
5. the method that the junction temperature as described in claim 1 or 4 to IGBT module carries out estimation on line,
In, based on cooling water flow model first junction temperature is modified respectively with the second junction temperature, obtains revised first knot
Warm and revised second junction temperature.
6. the method that the junction temperature as described in claim 1 or 4 to IGBT module carries out estimation on line,
In, using the greater in first junction temperature and second junction temperature as the junction temperature of the IGBT module.
7. the method for carrying out estimation on line to the junction temperature of IGBT module as described in claim 1, wherein
The IGBT module is used in electric vehicle, is preferably used in the electric machine controller of electric vehicle.
8. the method for carrying out estimation on line to the junction temperature of IGBT module as claimed in claim 7, wherein
When the IGBT module is used in electric machine controller, it is provided with multiple insulated gate bipolar crystal
Tube module, and the form that they are arranged with X row Y is arranged.
9. a kind of junction temperature estimation block for IGBT module comprising processing unit and storage unit,
The storage unit for storing instruction, when described instruction is executed by the processing unit, as any in claims 1 to 6
Junction temperature evaluation method described in one is implemented.
10. being used for the junction temperature estimation block of IGBT module as claimed in claim 9, it is implemented in electricity
In machine controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811348746.6A CN109490739B (en) | 2018-11-13 | 2018-11-13 | Method and module for estimating junction temperature of insulated gate bipolar transistor module on line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811348746.6A CN109490739B (en) | 2018-11-13 | 2018-11-13 | Method and module for estimating junction temperature of insulated gate bipolar transistor module on line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109490739A true CN109490739A (en) | 2019-03-19 |
| CN109490739B CN109490739B (en) | 2021-07-09 |
Family
ID=65694378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811348746.6A Active CN109490739B (en) | 2018-11-13 | 2018-11-13 | Method and module for estimating junction temperature of insulated gate bipolar transistor module on line |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109490739B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220891A (en) * | 2020-03-04 | 2020-06-02 | 楚天龙股份有限公司 | IGBT junction temperature measuring method and measuring device |
| CN111983411A (en) * | 2020-07-10 | 2020-11-24 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN112578255A (en) * | 2020-12-18 | 2021-03-30 | 重庆大学 | Electric automobile IGBT health monitoring system based on fiber grating sensor |
| CN114442694A (en) * | 2021-12-31 | 2022-05-06 | 重庆长安新能源汽车科技有限公司 | Self-calibration silicon carbide motor controller junction temperature estimation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006049411A (en) * | 2004-08-02 | 2006-02-16 | Toshiba Mach Co Ltd | Method and device for monitoring joining section of power element by estimating temperature rise of the section |
| US20140265741A1 (en) * | 2013-03-12 | 2014-09-18 | Rockwell Automation Technologies, Inc. | System and Method for Temperature Estimation in an Integrated Motor Drive |
| CN104155587A (en) * | 2014-07-18 | 2014-11-19 | 浙江大学 | System and method for on-line detection of operating junction temperature of IGBT module |
| CN105973502A (en) * | 2016-06-23 | 2016-09-28 | 苏州汇川技术有限公司 | IGBT module temperature detection method and device |
| CN106712553A (en) * | 2016-12-30 | 2017-05-24 | 江苏中科君芯科技有限公司 | IGBT junction temperature fluctuation calculation method for sine inverter |
-
2018
- 2018-11-13 CN CN201811348746.6A patent/CN109490739B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006049411A (en) * | 2004-08-02 | 2006-02-16 | Toshiba Mach Co Ltd | Method and device for monitoring joining section of power element by estimating temperature rise of the section |
| US20140265741A1 (en) * | 2013-03-12 | 2014-09-18 | Rockwell Automation Technologies, Inc. | System and Method for Temperature Estimation in an Integrated Motor Drive |
| CN104155587A (en) * | 2014-07-18 | 2014-11-19 | 浙江大学 | System and method for on-line detection of operating junction temperature of IGBT module |
| CN105973502A (en) * | 2016-06-23 | 2016-09-28 | 苏州汇川技术有限公司 | IGBT module temperature detection method and device |
| CN106712553A (en) * | 2016-12-30 | 2017-05-24 | 江苏中科君芯科技有限公司 | IGBT junction temperature fluctuation calculation method for sine inverter |
Non-Patent Citations (1)
| Title |
|---|
| 丁杰等: ""高功率密度电机控制器的IGBT模块损耗及结温计算"", 《电源学报》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220891A (en) * | 2020-03-04 | 2020-06-02 | 楚天龙股份有限公司 | IGBT junction temperature measuring method and measuring device |
| CN111220891B (en) * | 2020-03-04 | 2022-06-14 | 楚天龙股份有限公司 | IGBT junction temperature measuring method and measuring device |
| CN111983411A (en) * | 2020-07-10 | 2020-11-24 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN111983411B (en) * | 2020-07-10 | 2022-12-27 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN112578255A (en) * | 2020-12-18 | 2021-03-30 | 重庆大学 | Electric automobile IGBT health monitoring system based on fiber grating sensor |
| CN114442694A (en) * | 2021-12-31 | 2022-05-06 | 重庆长安新能源汽车科技有限公司 | Self-calibration silicon carbide motor controller junction temperature estimation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109490739B (en) | 2021-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109490739A (en) | The method and module of estimation on line are carried out to the junction temperature of IGBT module | |
| CN110875710B (en) | Over-temperature protection method and device for power module in inverter and vehicle | |
| EP3267774B1 (en) | Method and apparatus of evaluating heat dissipation system condition for power module | |
| CN106153208B (en) | The Temperature estimate tied without using dedicated Temperature estimate or the online IGBT of measuring device | |
| CN109597966B (en) | Method for estimating junction temperature of IGBT (insulated Gate Bipolar transistor) of power element in motor controller | |
| CN110108999B (en) | IGBT module working junction temperature online detection system and method | |
| Baker et al. | Improved reliability of power modules: A review of online junction temperature measurement methods | |
| CN107192934B (en) | Method for measuring incrustation transient thermal impedance of high-power IGBT | |
| CN104736981B (en) | Semiconductor chip temperature estimating device and overtemperature protection system | |
| CN102636291B (en) | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof | |
| ES2409004T3 (en) | System and procedure for determining the resistance of the stator winding in an AC motor using motor controllers | |
| CN110502720B (en) | Loss on-line calculation method of power semiconductor module and application method and device thereof | |
| CN105158667B (en) | A kind of current transformer power diode junction temperature measurement System and method for | |
| CN110658435B (en) | IGBT junction temperature monitoring device and method | |
| EP3767312B1 (en) | Current sampling method and current sampling circuit | |
| CN111024260B (en) | Power semiconductor device hot spot temperature estimation method and device | |
| CN108548570B (en) | Coolant flow estimation method, coolant temperature estimation device, coolant temperature estimation system and vehicle | |
| CN103076482A (en) | Motor current detection device and motor current detection method | |
| Cao et al. | Online monitoring of IGBT junction temperature based on V ce measurement | |
| CN110082660A (en) | Current transformer IGBT module junction temperature estimation method based on Kalman filter | |
| Yang et al. | Transient electro-thermal analysis for a MOSFET based traction inverter | |
| Ma et al. | Method of junction temperature estimation and over temperature protection used for electric vehicle's IGBT power modules | |
| CN108072819A (en) | The abatement detecting method and device of IGBT | |
| CN105973502B (en) | A kind of IGBT module temperature checking method and device | |
| CN104933308A (en) | Reliability assessment method oriented to domestic military IGBT (Insulated Gate Bipolar Translator) module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |