CN109488890A - A kind of shortwave cooling LED illuminator - Google Patents
A kind of shortwave cooling LED illuminator Download PDFInfo
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- CN109488890A CN109488890A CN201811239710.4A CN201811239710A CN109488890A CN 109488890 A CN109488890 A CN 109488890A CN 201811239710 A CN201811239710 A CN 201811239710A CN 109488890 A CN109488890 A CN 109488890A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/27—Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
- F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
- F21V17/101—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening permanently, e.g. welding, gluing or riveting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/0025—Fastening arrangements intended to retain light sources the fastening means engaging the conductors of the light source, i.e. providing simultaneous fastening of the light sources and their electric connections
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
- F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/87—Organic material, e.g. filled polymer composites; Thermo-conductive additives or coatings therefor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/89—Metals
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The present invention relates to a kind of shortwave radiation cooling LED illuminators, it includes conductive and heat-conductive metal-based layer, several LED luminescence chips and near-infrared shortwave radiation layer, several LED luminescence chips are connected electrically on the conductive and heat-conductive metal-based layer, several LED luminescence chips being capable of electrified light emitting, the near-infrared shortwave radiation layer is arranged on the conductive and heat-conductive metal-based layer, the near-infrared shortwave radiation layer by the LED illuminator work caused by temperature, to external radiation in the form of near-infrared shortwave, to radiate to the LED illuminator, heated the radiated near-infrared shortwave wavelength of the near-infrared shortwave radiation layer is at 8 μm or less.
Description
Technical field
The present invention relates to a kind of LED illuminator, particularly relate to it is a kind of in the form of near-infrared shortwave by heat to external radiation
LED illuminator.
Background technique
It is well known that further withdrawing from the market with incandescent lamp, the demand to LED filament lamp is increasing both at home and abroad,
Since LED filament lamps and lanterns have the luminous light emitting species of the wide-angle of public habit and well known conventional incandescent, to there is " trend of back-to-ancients "
The application group institute heat of love knot is held in both hands, and is allowed and is growed as the LED filament lamp of incandescent lamp has found " depression " of its application.Also due to LED
The manufacturing process of filament lamp and incandescent lamp are similar, and the illumination producer of incandescent lamp is manufactured for always working on, then raw
It produces LED filament lamp and enters this application field, an extremely simple thing is undoubtedly in production.As LED filament lamp is by managing
By the illuminating product to reality, from decorative applications to functional lighting application, demand will be growing.
But on technological maheup, since the filament of filament lamp is in closed environment, in addition the substrate area of LED filament
Too small, small in light decay, under the requirement of long-life, the heat dissipation in practical application is extremely difficult to ideal design requirement, and power is always
It cannot improve, maximum power can only hover between 6 ~ 8 watts at present；At present LED filament lamp it is another be disadvantageous in that due to
Heat dissipation area need to be increased, filament length is longer, so that being extremely difficult to full complete cycle light in structure；In addition the biggish original of light-emitting surface
The effect of conventional incandescent is not achieved in cause, the luminous intensity issued, and LED filament lamp prevents in many occasions from replacing well
For incandescent lamp.
LED filament lamp is disadvantageous in that at present: 1, it is two-sided go out light the transparent substrates length such as sapphire, glass compared with
Long, light is mainly towards the direction of surrounding, than darker under lamp.2, it is also court that soft aluminum substrate single side, which goes out the main light of light--,
Around, the light of top and bottom is weaker.
It is present it is two-sided go out light and single side light extracting LED filament lamp all have a problem that, be just limited substrate inherently
Heat dissipation purpose cannot be reached, furthermore substrate is by sapphire, glass, aluminium and FPC etc., these materials are heated radiated it is red
Outside line wavelength belongs to mid and far infrared radiation at 8 μm or more；The glass of filament lamp glass bulb is common soda-lime glass；Substance
Vibration frequency (eigenfrequency) rhymed formula schedule mechanical constant and atomic weight size, network former such as Na2O·CaO·
6SiO2 Or Na2SiO3、CaSiO3、SiO2 Equal atomic weight are smaller, and force constant is larger, therefore eigenfrequency is big, cannot penetrate in,
Far infrared, can only penetrate near-infrared, and the transmissible wavelength of institute is in 2.5 μm of near-infrared shortwaves and visible light below and ultraviolet
Light.So the heat of common filament lamp filament cannot directly transmit glass shell, lower thermally conductive gas and glass can only be passed through
Glass, the limited glass outer surface that passes to of thermal resistance is taken away by air again layer by layer, and this is the major defect for traditional technology.
Summary of the invention
The technical scheme adopted by the invention is as follows: a kind of shortwave radiation cooling LED illuminator comprising conductive and heat-conductive metal
Base, several LED luminescence chips and near-infrared shortwave radiation layer, several LED luminescence chips are connected electrically in the conductive and heat-conductive
On metal-based layer, several LED luminescence chips can electrified light emitting, the near-infrared shortwave radiation layer setting the conductive and heat-conductive gold
Belong to base on, the near-infrared shortwave radiation layer by the LED illuminator work caused by temperature, in the form of near-infrared shortwave to
External radiation, to radiate to the LED illuminator, heated the radiated near-infrared shortwave wave of the near-infrared shortwave radiation layer
It grows at 8 μm or less.
The near-infrared shortwave radiation layer is made of near-infrared shortwave radiation material.The near-infrared shortwave radiation material passes through more
On the one hand the doping of kind ion can be such that the lattice of the near-infrared shortwave radiation material is distorted, it is symmetrical to reduce lattice vibration
Property, thus two phonons of enhancing or multi-phonon combination radiation；On the other hand the near-infrared shortwave radiation material is capable of providing more
Electron orbit energy level, to enhance shortwave radiation ability.Heated the radiated near-infrared of the near-infrared shortwave radiation material
Shortwave wavelength between 1~5 μm, the intense radiation mechanism of 1~5 μm of wave band be impurity energy level electron transition and free current-carrying
Radiation caused by sub.
It is provided with adhesive layer between the conductive and heat-conductive metal-based layer and the near-infrared shortwave radiation layer, the near-infrared shortwave
Radiating layer is exposed to outside the adhesive layer, and the near-infrared shortwave radiation layer is fixed on the conductive and heat-conductive by the adhesive layer
On metal-based layer.
The near-infrared shortwave radiation layer is microcavity room floor.
LED light-emitting filament is made by the shortwave radiation cooling LED illuminator, which is arranged in bulb glass
In cover, the LED light-emitting filament electrified light emitting, heat caused by work, to external radiation, and is worn in the form of near-infrared shortwave
The saturating bulb glass cover distributes outward, to radiate to the LED light-emitting filament.
The LED light-emitting filament includes the fixed film frame that insulate, and shortwave radiation cooling LED illuminator setting is fixed in the insulation
On film frame, the LED light-emitting filament can be erected in the bulb glass cover by the insulation fixed film frame.
The LED light-emitting filament in the form of sheets, the shortwave radiation cooling LED illuminator also in the form of sheets, several LED luminescence chips
It is connected electrically in the front and the back side of the conductive and heat-conductive metal-based layer simultaneously, which is arranged simultaneously leads at this
The back side of the conductive and heat-conductive metal-based layer is arranged in the front and the back side of conductance thermometal base, the fixed film frame of the insulation.
The LED light-emitting filament is cylindrical in shape, and the fixed film frame of the insulation is also cylindrical in shape, the shortwave radiation cooling LED hair of sheet
Body of light is covered on the outer surface of the fixed film frame of the insulation, and several LED luminescence chips are connected electrically in the conductive and heat-conductive Metal Substrate
The front of the conductive and heat-conductive metal-based layer is arranged in the front of layer, the near-infrared shortwave radiation layer.
The invention has the benefit that the present invention shines, form and traditional incandescent lamp are closely similar, really realize
The full complete cycle light of incandescent lamp, while complete cycle shines, complete cycle heat dissipation, and what basal plate heated issued is in 1-8um wavelength
The short wavelength-NIR of range, what basal plate heated was issued is the short wavelength-NIR in 1um wave-length coverage in practice, and wavelength can be with
Glass is directed through to radiate.
Detailed description of the invention
Fig. 1 is that illuminator LED luminescence chip of the present invention is connected electrically in conductive and heat-conductive metal-based layer front and near-infrared is short
The schematic diagram at the conductive and heat-conductive metal-based layer back side is arranged in wave radiation layer.
Fig. 2 is that illuminator LED luminescence chip of the present invention is connected electrically in conductive and heat-conductive metal-based layer front and near-infrared is short
The schematic diagram of the section structure at conductive and heat-conductive metal-based layer front and the back side is arranged in wave radiation layer.
Fig. 3-4 is the schematic illustration of microcavity room floor of the present invention.
Fig. 5 is the schematic diagram of various types LED light-emitting filament of the present invention.
Fig. 6 is the structural schematic diagram that LED light-emitting filament of the present invention is tubular.
Fig. 7 is a kind of structural schematic diagram of better embodiment of the invention.
Fig. 8-11 is the schematic diagram of the specific embodiment of the invention.
Specific embodiment
As shown in figs. 1-7, a kind of shortwave radiation cooling LED illuminator 100 comprising if conductive and heat-conductive metal-based layer 110,
Dry LED luminescence chip 120 and near-infrared shortwave radiation layer 130.
As shown in Figs. 1-2, several LED luminescence chips 120 are connected electrically on the conductive and heat-conductive metal-based layer 110, several
The LED luminescence chip 120 being capable of electrified light emitting.
The near-infrared shortwave radiation layer 130 is arranged on the conductive and heat-conductive metal-based layer 110.
The near-infrared shortwave radiation layer 130 works the LED illuminator 100 generated temperature, with near-infrared shortwave
Form is to external radiation, to radiate to the LED illuminator 100.
The conductive and heat-conductive metal-based layer 110 has front and the back side, and when specific implementation, several LED shine
Chip 120 is connected electrically in the front of the conductive and heat-conductive metal-based layer 110, alternatively, being connected electrically in the conductive and heat-conductive metal-based layer 110
The back side, alternatively, being connected electrically in the front and the back side of the conductive and heat-conductive metal-based layer 110 simultaneously.
When specific implementation, which is being arranged in the conductive and heat-conductive metal-based layer 110 just
Face, alternatively, the back side of the conductive and heat-conductive metal-based layer 110 is arranged in, alternatively, the conductive and heat-conductive metal-based layer is arranged in simultaneously
110 front and the back side.
Heated the radiated near-infrared shortwave wavelength of the near-infrared shortwave radiation layer 130 is at 8 μm or less.
The near-infrared shortwave radiation layer 130 is made of near-infrared shortwave radiation material.
When specific implementation, the near-infrared shortwave radiation material is by nickel oxide, cobalt oxide, iron oxide, in copper oxide
One or more mix.
On the one hand the near-infrared shortwave radiation material can make the near-infrared shortwave radiation material by the doping of different kinds of ions
The lattice of material is distorted, and is reduced lattice and is shaken symmetry, thus two phonons of enhancing or multi-phonon combination radiation；On the other hand should
Near-infrared shortwave radiation material is capable of providing more electron orbit energy levels, to enhance shortwave radiation ability.
Heated the radiated near-infrared shortwave wavelength of the near-infrared shortwave radiation material is between 1~5 μm, 1~5
The intense radiation mechanism of μm wave band be impurity energy level electron transition and free carrier caused by radiation, thus, it is a kind of in practice
The effective way for improving the infrared shortwave area radiance of material is reasonable chemical doping.
Microcosmic existing forms of the component of the near-infrared shortwave radiation material in sintering feed or mechanical stirring regard material
Expect the difference of preparation process and different, improvement achieved is also different.
The existing forms that the component of the near-infrared shortwave radiation material is enriched on crystal boundary are conducive to improve in material
Impurity concentration, improve material shortwave area radiance impurity concentration, improve material shortwave area radiance.
The shortwave radiation principle of the near-infrared shortwave radiation material is described as follows, it is because of its composition that material, which issues radiation,
Atom, molecule or ionic system are generated in different-energy shape transition between states, in general, the radiation of this sending, in shortwave
Section is mainly related with the transition of its electronics, then related with its Lattice Vibration Properties in long-wave band.So the element of composition material,
The factors such as chemical bond, lattice structure and defect will all influence wavelength and emissivity.
The electron transition of transition metal oxide is more active, so when specific implementation, present inventor
Select such as zirconium oxide, nickel oxide, iron oxide, aluminium oxide, cobalt oxide, urania, magnesia, manganese oxide, copper oxide, oxidation
The mixture of thorium, cerium oxide, titanium oxide, palladium oxide and silicon carbide etc. forms to modulate the near-infrared shortwave radiation of high radiant rate
Material, excellent in this kind of material with nickel oxide, the near-infrared radiation rate of cobalt oxide, iron oxide, copper oxide is more obvious, so real
Trampling middle selection, these one or more of are worked as and to be equipped with others to be deployed.In practice, (1) is mixed by different kinds of ions
Miscellaneous one side can be such that lattice is distorted, and reduce lattice and shake symmetry, thus two phonons of enhancing or multi-phonon combination radiation；
On the other hand more electron orbit energy levels can be provided, to enhance shortwave radiation ability.(2) in the strong of 1~5 μm of wave band
Radiation mechanism is the electron transition and the caused radiation of free carrier of impurity energy level, thus, a kind of infrared shortwave of improvement material
The effective way of area's radiance is reasonable chemical doping.(3) there are shapes for microcosmic in sintering feed or mechanical stirring of impurity
State regards the difference of material preparation process and different, and improvement achieved is also different.(4) what impurity was enriched on crystal boundary deposits
Be conducive to improve the impurity concentration in material in form, improve the radiance impurity concentration in material shortwave area, it is short to improve material
The radiance in wave area.
Present inventor is tested according to above-mentioned technology contents, has obtained following near-infrared shortwave spoke
Penetrate the composition allocation ratio of material, wherein the granular size of composition near-infrared shortwave radiation material granule object is nanoscale, particle
Between the size of object is 1-100 nanometers preferred, for example, Fe2O3、MnO2, CoO particulate matter size control between 1-100 nanometers.
Composition and proportion (weight percent) shortwave radiation coefficient
Fe2O3:80% MnO2: 15% CoO:5% 0.82
MnO2: 80% CoO:10% CuO:10% 0.87
MnO2:60% Fe2O3: 20% CoO:10% CuO:10% 0.88
Cr2O3:41%-44% Fe2O3:18%-20% MnO2:7%-9% NiO:29%-32% 0.89
When specific implementation, it is provided between the conductive and heat-conductive metal-based layer 110 and the near-infrared shortwave radiation layer 130 viscous
Oxidant layer 140 is connect, which is fixed on by the conductive and heat-conductive metal-based layer 110 by the adhesive layer 140
On.
The adhesive layer 140 can be made of materials such as epoxy resin or acrylic acid.
In modulation near-infrared shortwave radiation material, the selection of bonding agent is particularly critical, and general traditional way is will to glue
Re-coating is on heater after knot agent is mixed with radiative material.
Frequency of light wave is consistent with electronics eigenfrequency --- resonance --- light-wave energy of sink effect frequency, the sheet of electronics
It levies frequency to increase and reduce with temperature, absorbs energy band towards low frequency direction movement, be the length by low energy in infrared emanation
The shortwave of wave direction high-energy transmits, that is, shortwave radiation material absorbs long-wave radiation, the radiation of long-wave radiation material reflecting short.
Since most of bonding agent intrinsic property belongs to one kind of far-infrared material, if directly cladding near-infrared is short
If wave material, clad will directly stop or change the wavelength of near-infrared shortwave material.So connecing effective way the most certainly
It is first to coat a thin layer of asphalt mixtures modified by epoxy resin on heater (LED illuminator 100) surface and penetrate to lead the bonding agents such as rouge or polypropylene, then
Near-infrared shortwave material (near-infrared shortwave radiation layer 130) is uniformly covered on its surface again, fails to glue by surface again after drying
The powder connect is shaken off to clean up, and so near-infrared radiation material can expose, and unobstructed eradiation goes out shortwave
Near-infrared heat, in addition, bonding agent can mix mid and far infrared material such as zircon (ZrO2.SiO2), cordierite
(2MgO.2Al2O3.5SiO2) etc., it can more effectively stop and reflecting surface short wavelength-NIR material is absorbed by glass shell
The reflected infra-red radiation in portion and the heat of the infrared passback of itself.
When specific implementation, which is microcavity room floor 150, the original of the microcavity room floor 150
Reason is described below.
The principle of micro chamber effect, resonance effects is, optical microcavity is a kind of size in micron dimension or sub-micron
The optical resonator of magnitude, it using on the discontinuous interface of refractive index reflection, total reflection, scattering or diffraction it is equivalent
It answers, light is limited in the region of a very little.Optical microcavity based on Whispering-gallery-mode becomes the hot spot of Recent study.It is first
The first optical resonator that it can be comparable with optical wavelength as a kind of size, so that some quantrm electrodynamicses in condensed state are existing
As being studied；Secondly it is used as a kind of Low threshold laser microcavity, is had very well in many application fields such as integrated optics, information optics
Application prospect.
The shape of optical medium microcavity is also varied at present, mainly has Microsphere Cavities, micro- disk chamber, micro-loop chamber, micro- core ring several
Kind.In cavity quantum electrodynamics, the resonant cavity of high quality factor and low mode volume is needed, it is close with the energy for obtaining high
Degree.
Present inventor draws the following conclusions by multiple repetition test.
As shown in figure 3, the microcavity of experiment one, the unilateral upper etching of conductance thermometal or coining certain depth and opening ratios
Room forms the microcavity room floor 150, and micro chamber preferred depth 7-9um, be open 2-4um, and the spacing that is open can obtain spoke in 4-6um
Ejected wave is grown in 1-5um, the near-infrared shortwave radiation face (near-infrared shortwave radiation layer 130) that radiance is 0.9 or so.
As shown in figure 4, experiment two, on conductive and heat-conductive sheet metal coat 1-10 micron diameter glass microballoon: obtain spoke
The long 1-5um of ejected wave, the near-infrared shortwave radiation face (near-infrared shortwave radiation layer 130) that thermal emissivity rate is 0.85 or so.
As shown in figure 5, LED electroluminescent lamp is made by the shortwave radiation cooling LED illuminator 100 when specific implementation
Silk 200, the LED light-emitting filament 200 are arranged in bulb glass cover 210.
200 electrified light emitting of LED light-emitting filament, heat outside spoke in the form of near-infrared shortwave caused by work
It penetrates, and penetrates the bulb glass cover 210 and distribute outward, to radiate to the LED light-emitting filament 200.
When specific implementation, the inert gas of filling high thermal conductivity in the bulb glass cover 210, for example, helium, it should
200 electrified light emitting of LED light-emitting filament, the partial heat in heat caused by work is by the inert gas with heat transfer
Form is conducted to the bulb glass cover 210, and is distributed outward.
Vapour molecule is the dominant absorbers of infra-red radiation.It is (micro- that stronger absorption band of water vapor is located at 0.71~0.735 μ
Rice), 0.81~0.84 μ, 0.89~0.99 μ, 1.07~1.20 μ, 1.3~1.5 μ, 1.7~2.0 μ, 2.4~3.3 μ, 4.8~
8.0μ.These absorption bands just in near-infrared and middle infrared band, can directly stop hot transmitting, so can also in glass bulb
To be the dry air made an uproar.
When specific implementation, which, which spirals, is arranged in the bulb glass cover 210 to be promoted and be somebody's turn to do
Effective length of illumination of LED light-emitting filament 200.
When specific implementation, which includes the fixed film frame 220 that insulate, shortwave radiation heat dissipation
The setting of LED illuminator 100 is on the fixed film frame 220 of the insulation.
The LED light-emitting filament 200 can be erected in the bulb glass cover 210 by the insulation fixed film frame 220.
As shown in Figs. 1-2, specific implementation when, the LED light-emitting filament 200 in the form of sheets, the shortwave radiation cooling LED
Illuminator 100 is also in the form of sheets.
Several LED luminescence chips 120 are connected electrically in the front and the back side of the conductive and heat-conductive metal-based layer 110 simultaneously.
The front and the back side of the conductive and heat-conductive metal-based layer 110 is arranged in the near-infrared shortwave radiation layer 130 simultaneously.
The back side of the conductive and heat-conductive metal-based layer 110 is arranged in the fixed film frame 220 of the insulation.
As shown in fig. 6, the LED light-emitting filament 200 is cylindrical in shape when specific implementation, the fixed film frame 220 of the insulation
It being cylindrical in shape, the shortwave radiation cooling LED illuminator 100 of sheet is covered on the outer surface of the fixed film frame 220 of the insulation, thus
Promote the light-emitting area of the LED light-emitting filament 200.
Several LED luminescence chips 120 are connected electrically in the front of the conductive and heat-conductive metal-based layer 110.
The front of the conductive and heat-conductive metal-based layer 110 is arranged in the near-infrared shortwave radiation layer 130.
As shown in fig. 7, several LED luminescence chips 120 are connected electrically in the conductive and heat-conductive metal when specific implementation
The front of the conductive and heat-conductive metal-based layer 110 is arranged in the front of base 110, the near-infrared shortwave radiation layer 130.
Several strip of sheet shortwave radiation cooling LED illuminator 100 is connected on heating column 230, forms the LED electroluminescent lamp
Silk 200, several strip of sheet shortwave radiation cooling LED illuminator 100 is looped around 230 surrounding of heating column.
The back side of the conductive and heat-conductive metal-based layer 110, the fixed film frame 220 of the insulation is arranged in the fixed film frame 220 of the insulation
Fixed film is radiated for mid and far infrared, which sprays the near-infrared radiation material for absorbing mid and far infrared radiation, should
LED light-emitting filament 200 is arranged on lamp holder 240.
The lamp holder 240 includes exposed parts 241 and interior seating portion 242, wherein and the interior seating portion 242 is reflective pedestal,
The LED light-emitting filament 200 is connected on the reflective pedestal, and insulation heat radiation material has been sprayed on the outer surface of the exposed parts 241
The bed of material 251 has sprayed short-wave infrared material layer 252 on the inner surface of the exposed parts 241.
It is provided with power supply IC253 in the exposed parts 241, the surface power supply IC253 has sprayed mid and far infrared material layer.
When work, which can penetrate the bulb glass cover 210
Near-infrared electromagnetic wave, the near-infrared radiation material that the mid and far infrared of back side radiant is sprayed by 230 surface of heating column absorb, this is led
Plume 230 absorbs mid and far infrared and transfers to give off the heat of near-infrared wavelength, and by a part of thermal conductivity to the lamp holder 240,
The mid and far infrared radiating layer at 100 back side of shortwave radiation cooling LED illuminator does not absorb the near-infrared that heating column is radiated.
Fig. 8-9 illustrates the finished lamps produced using technology of the invention.
Claims (10)
1. a kind of shortwave radiation cooling LED illuminator, it is characterised in that: including conductive and heat-conductive metal-based layer, the luminous core of several LED
Piece and near-infrared shortwave radiation layer, several LED luminescence chips are connected electrically on the conductive and heat-conductive metal-based layer, several to be somebody's turn to do
LED luminescence chip can electrified light emitting, the near-infrared shortwave radiation layer be arranged on the conductive and heat-conductive metal-based layer, the near-infrared
Shortwave radiation layer is by temperature caused by LED illuminator work, to external radiation in the form of near-infrared shortwave, to the LED
Illuminator radiates, and heated the radiated near-infrared shortwave wavelength of the near-infrared shortwave radiation layer is at 8 μm or less.
2. a kind of shortwave radiation cooling LED illuminator as described in claim 1, it is characterised in that: the near-infrared shortwave radiation
Layer is made of near-infrared shortwave radiation material.
3. a kind of shortwave radiation cooling LED illuminator as claimed in claim 2, it is characterised in that: the near-infrared shortwave radiation
On the one hand material can be such that the lattice of the near-infrared shortwave radiation material is distorted by the doping of different kinds of ions, reduce lattice
Symmetry is shaken, thus two phonons of enhancing or multi-phonon combination radiation；On the other hand the near-infrared shortwave radiation material can mention
For more electron orbit energy levels, to enhance shortwave radiation ability.
4. a kind of shortwave radiation cooling LED illuminator as claimed in claim 2, it is characterised in that: the near-infrared shortwave radiation
Heated the radiated near-infrared shortwave wavelength of material is miscellaneous in the intense radiation mechanism of 1~5 μm of wave band between 1~5 μm
Radiation caused by the electron transition of mass-energy grade and free carrier.
5. a kind of shortwave radiation cooling LED illuminator as claimed in claim 2, it is characterised in that: the conductive and heat-conductive Metal Substrate
It is provided with adhesive layer between layer and the near-infrared shortwave radiation layer, which is exposed to outside the adhesive layer
The near-infrared shortwave radiation layer is fixed on the conductive and heat-conductive metal-based layer by portion by the adhesive layer.
6. a kind of shortwave radiation cooling LED illuminator as described in claim 1, it is characterised in that: the near-infrared shortwave radiation
Layer is microcavity room floor.
7. a kind of shortwave radiation cooling LED illuminator as claimed in claim 5, it is characterised in that: radiated by the shortwave radiation
LED light-emitting filament is made in LED illuminator, which is arranged in bulb glass cover, which, which is powered, sends out
Light, heat caused by work, to external radiation, and are penetrated the bulb glass cover and distributed outward in the form of near-infrared shortwave, with
It radiates to the LED light-emitting filament.
8. a kind of shortwave radiation cooling LED illuminator as claimed in claim 7, it is characterised in that: the LED light-emitting filament includes
Insulate fixed film frame, and shortwave radiation cooling LED illuminator setting passes through the fixed film frame of the insulation on the fixed film frame of the insulation
The LED light-emitting filament can be erected in the bulb glass cover.
9. a kind of shortwave radiation cooling LED illuminator as claimed in claim 8, it is characterised in that: the LED light-emitting filament is in piece
Shape, also in the form of sheets, several LED luminescence chips are connected electrically in conductive and heat-conductive gold to the shortwave radiation cooling LED illuminator simultaneously
Belong to base front and the back side, the near-infrared shortwave radiation layer simultaneously be arranged in the conductive and heat-conductive metal-based layer front and
The back side of the conductive and heat-conductive metal-based layer is arranged in the back side, the fixed film frame of the insulation.
10. a kind of shortwave radiation cooling LED illuminator as claimed in claim 8, it is characterised in that: the LED light-emitting filament is in
Tubular, the fixed film frame of the insulation are also cylindrical in shape, and the shortwave radiation cooling LED illuminator of sheet is covered in the fixed film frame of the insulation
Outer surface on, several LED luminescence chips are connected electrically in the front of the conductive and heat-conductive metal-based layer, the near-infrared shortwave radiation
The front of the conductive and heat-conductive metal-based layer is arranged in layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811239710.4A CN109488890A (en) | 2018-10-24 | 2018-10-24 | A kind of shortwave cooling LED illuminator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811239710.4A CN109488890A (en) | 2018-10-24 | 2018-10-24 | A kind of shortwave cooling LED illuminator |
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| Publication Number | Publication Date |
|---|---|
| CN109488890A true CN109488890A (en) | 2019-03-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811239710.4A Pending CN109488890A (en) | 2018-10-24 | 2018-10-24 | A kind of shortwave cooling LED illuminator |
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| CN (1) | CN109488890A (en) |
Citations (5)
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|---|---|---|---|---|
| GB599477A (en) * | 1944-09-25 | 1948-03-12 | British Thomson Houston Co Ltd | Improvements in and relating to infra-red generators |
| WO2011147285A1 (en) * | 2010-05-28 | 2011-12-01 | 方方 | Radiation heat dissipation led structure and the manufacturing method thereof |
| CN105927950A (en) * | 2016-06-01 | 2016-09-07 | 山东晶泰星光电科技有限公司 | LED filament with thermal radiation material and LED filament bulb |
| CN107665942A (en) * | 2016-07-26 | 2018-02-06 | 上海莱托思电子科技有限公司 | Height radiation LED filament |
| CN108019632A (en) * | 2017-12-29 | 2018-05-11 | 深圳市丰功文化传播有限公司 | A kind of LED filament lamp and its LED light-emitting sections with infra-red radiation heat dissipation |
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2018
- 2018-10-24 CN CN201811239710.4A patent/CN109488890A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB599477A (en) * | 1944-09-25 | 1948-03-12 | British Thomson Houston Co Ltd | Improvements in and relating to infra-red generators |
| WO2011147285A1 (en) * | 2010-05-28 | 2011-12-01 | 方方 | Radiation heat dissipation led structure and the manufacturing method thereof |
| CN105927950A (en) * | 2016-06-01 | 2016-09-07 | 山东晶泰星光电科技有限公司 | LED filament with thermal radiation material and LED filament bulb |
| CN107665942A (en) * | 2016-07-26 | 2018-02-06 | 上海莱托思电子科技有限公司 | Height radiation LED filament |
| CN108019632A (en) * | 2017-12-29 | 2018-05-11 | 深圳市丰功文化传播有限公司 | A kind of LED filament lamp and its LED light-emitting sections with infra-red radiation heat dissipation |
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