CN103489998B - Light-emitting assembly and manufacturing method thereof, as well as LED (light-emitting diode) lighting device with light-emitting assembly - Google Patents
Light-emitting assembly and manufacturing method thereof, as well as LED (light-emitting diode) lighting device with light-emitting assembly Download PDFInfo
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- CN103489998B CN103489998B CN201310480560.7A CN201310480560A CN103489998B CN 103489998 B CN103489998 B CN 103489998B CN 201310480560 A CN201310480560 A CN 201310480560A CN 103489998 B CN103489998 B CN 103489998B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
Abstract
The invention discloses a light-emitting assembly and a manufacturing method thereof, as well as an LED (light-emitting diode) lighting device with the light-emitting assembly. The light-emitting assembly comprises a substrate (11), a nano metal structure (12) and a light-emitting material layer (13), wherein the nano metal structure (12) can produce a surface plasmon polariton light-enhanced effect, the light-emitting material layer (13) is coated on the nano metal structure (12), and the nano metal structure (12) is arranged on the surface of the substrate (11). The light-emitting assembly disclosed by the invention integrates light-emitting materials and the nano metal structure well, so that the light-emitting assembly has good light-emitting performance under the excitation of short-wavelength light, therefore, when the light-emitting assembly is applied to an LED lighting device, the light-emitting performance of the LED lighting device can be effectively improved.
Description
Technical field
The present invention relates to photoelectron technical field, more particularly, to a kind of luminescence component and its manufacture method and there is this
The led illuminator of optical assembly.
Background technology
Semiconductor lighting is the effective way that the mankind seek energy-conservation, low consumption and environmental protection lighting light source, due to its illumination
The versatility of application, people are more and more stronger to the demand of white light led.But, the marketization of white light led illumination is promoted and is still subject to
The restriction of its luminous efficiency.Due to mature preparation process and low cost, the main product of white light led in the market is to use
Blue light led coordinates yellow fluorescent powder to obtain.Therefore, lifted white light led luminous efficiency, need from improve blue light led and
Luminous efficiency two aspect of fluorescent material is set about.Up to the present, by improving crystalline quality, current spreading layer and MQW
(mqw) structure design is to lift the internal quantum efficiency of blue light led still carrying out, but the room for improvement of these means is not
Greatly, and every time all increasing considerably along with cost are improved.
Research shows, the surface plasma excimer enhancement effect that nanometer metal structure produces can increase substantially led
And the luminous efficiency of luminescent material, it is a revolutionary new way obtaining efficient high brightness white light led.However, how will
It is a difficult problem that nanometer metal structure and luminescent material effectively integrate to obtain efficient led light-emitting device again.
Have in prior art and coat luminous material layer using on LED light source, more directly arrange above luminous material layer
The Integration Mode of one layer of metal level that can produce surface plasma photo-enhancement effect, but in this fashion, due to nanometer gold
For tens nanometer to hundreds of nanometers, it is effective in the useful effect interval of the surface plasma excimer enhancement effect that genus structure produces
Effect is interval, and less than 1 micron, it is only strengthened to the light in its useful effect interval, and to this interval outside light anti-
And create absorption and barrier effect, therefore it is to the reinforced effects of led integrated light source and inconspicuous.
Content of the invention
The technical problem to be solved in the present invention is that in view of the shortcomings of the prior art, and the present invention provides a kind of sending out
Optical assembly, its luminescent material and nanometer metal structure have been carried out integrating well so as under the exciting of the light of short wavelength tool
There are good luminescent properties；Present invention also offers the manufacture method of this luminescence component and the led photograph with this luminescence component
Bright device.
For achieving the above object, the luminescence component of the present invention includes matrix, can produce the enhancing of surface plasma excimer light
The nanometer metal structure of effect and the luminous material layer being coated on nanometer metal structure, above-mentioned nanometer metal structure is arranged on base
Body surface face.In this programme, matrix can be tabular, coniform, curved, cylindrical shape or other irregularly shaped, its material
Can be the material such as glass, pottery, plastics, metal, and this matrix can be integral type structure or separated structure,
Its Main Function is to effectively integrate nanometer metal structure and luminous material layer, is easy to be applied in led illuminator, therefore its
Shape and material can select as needed.In this programme, nanometer metal structure is made up of nano level metallic particles, its formation
Matrix surface (can multiple being formed simultaneously on the surface, such as surfaces externally and internally is formed, left and right surface is formed) simultaneously simultaneously, then
Luminous material layer is coated on nanometer metal structure, during use, this luminescence component is placed on the side of led or surrounding is
Can, the luminous material layer on this luminescence component can send enhancing in the presence of the surface plasma that nanometer metal structure produces
Light, and this luminescence component will not block the light that at light-emitting window, led sends in itself, therefore also led light will not be produced and stop
Effect, overcomes luminescence component of the prior art or light and strengthens light absorbs that embedded photoluminescent material brings to led and stopping and lack
Point.
Further, above-mentioned nanometer metal structure be shaped as island, its thickness be 5nm ~ 1 μm；Above-mentioned luminescent material thickness
Spend for 10nm ~ 1 μm.In this programme, the nanometer metal structure of island forms continuous rough surface, and surface plasma wave can be
Nano level concavo-convex place produces diffraction effect and is scattered, and causes near field to strengthen, strengthens the illumination effect of luminescence component.Due to receiving
Rice metal structure thickness is excessive, is not easily formed island structure, too thin, is not easily accomplished the preparation of metal level, therefore we
The preparation technology of nanometer metal structure and the reinforced effects of island nanometer metal structure are considered, by nanometer metal structure in case
THICKNESS CONTROL between 5nm ~ 1 μm；And luminous material layer THICKNESS CONTROL is between 10nm ~ 1 μm, on the one hand, can make to light
Material layer is completely in the effective range of nanometer metal structure surface plasma, on the other hand can support to use grain
Footpath is less than 10 nanometers of quantum dot it is also possible to support the inorganic fluorescent powder of big particle diameter.
Further, in above-mentioned nanometer metal structure select metal be gold, silver, aluminum, copper, nickel, titanium, cobalt, chromium, platinum, palladium,
The alloy of one or more of magnesium, zinc, it is the inorganic of 1nm ~ 1 μm that above-mentioned luminous material layer selects luminous organic material or particle diameter
Luminescent material or combination.In this programme, in nanometer metal structure select alloy when, alloy can by gold, silver, aluminum, copper,
Two or more metals any in nickel, titanium, cobalt, chromium, platinum, palladium, magnesium, zinc combine, in any proportion for example with 78% gold medal
Nitinol that alloy, 50% nickel and 50% titanium made with 22% aluminum is made etc.；Luminous organic material and phosphor
Can be combined with arbitrary proportion.
Further, the metal selected in above-mentioned nanometer metal structure is the alloy of one or more of gold, silver, aluminum；On
Stating phosphor is that (inorganic fluorescent powder and quantum dot equally can also be with for inorganic fluorescent powder or quantum dot or combination
Arbitrary proportion combines), in this programme, inorganic fluorescent powder can be the combination of multiple fluorescent material again.Wherein, the quantum in this programme
Point for conventional be smaller in size than or close to Bohr radius, the nano-particle with obvious quantum effect, such as cds,
Zns, cdse etc., it can be excited luminous, have the advantages that photochemical stability is high, be widely used in luminescent device；No
The general inorganic fluorescent material that machine fluorescent material encapsulates for led, can for yttrium-aluminium-garnet system fluorescent material, silicate fluorescent powder,
Nitride or nitric oxide fluorescent powder etc.；Luminous organic material is the organic material that effectively can be excited by 420nm ~ 470nm blue light
Material, such as dye stuff of rhodamine kinds, Coumarinses dyestuff, fluorenes class dyestuff or stilbene class dyestuff etc..
Further, above-mentioned nanometer metal structure thickness is 5nm ~ 50nm, and above-mentioned luminous material layer thickness is 50nm ~ 500nm.
Because bigger its of the thickness of nanometer metal structure is formed, the time is longer, it is bigger to expend amount of metal, and when nanometer metal structure reaches
To after certain thickness, it no longer increases with thickness to the impact that luminous material layer lights and is remarkably reinforced, therefore, comprehensive in this programme
Close and consider nanometer metal structure to the luminescence enhancement effect of luminous material layer and cost of manufacture, by the scope control of nanometer metal structure
System, between 5nm ~ 50nm, had both achieved effective enhancing to luminous material layer for the nanometer metal structure surface plasma, and energy
Cost-effective and manufacturing time.And luminous material layer thickness is again based on the effect above and the controlling factors of cost, due to
The surface plasma of nanometer metal structure has created larger to the luminous material layer in 0 ~ 500nm thickness interval
Excitation, with the increase of luminous material layer thickness, the luminescent material of use also increases, and increase luminous material layer send out
Light effect can't obtain the enhancing being directly proportional with the increase of thickness, and luminescence enhancement effect is simultaneously inconspicuous, therefore in this programme
By luminous material layer THICKNESS CONTROL between 50nm ~ 500nm.
Luminescence component manufacture method, prepares nanometer metal structure step and on nanometer metal structure including in matrix surface
Coating luminous material layer step.
Further, above-mentioned matrix surface prepare nanometer metal structure step particularly as follows: from gold, silver, aluminum, copper, nickel,
The alloy of one or more in titanium, cobalt, chromium, platinum, palladium, magnesium, zinc, forms, in matrix surface, the metal level that thickness is 5nm ~ 1 μm, will
The matrix defining metal level is placed in vacuum or the annealing furnace of inert gas shielding, by temperature control at 100 DEG C ~ 500 DEG C
Interior, carry out the annealing of 5 minutes ~ 5 hours, be subsequently cooled to room temperature, form nanometer metal structure；Above-mentioned in nano metal knot
Coating luminous material layer step on structure particularly as follows: from luminous organic material or particle diameter be 1nm ~ 1 μm phosphor or
Combination, as luminescent material, luminescent material is coated on nanometer metal structure, and forming thickness is sending out of 10nm ~ 1 μm
Optical material layer.In this programme, forming metal level can be using the mode such as chemical plating or sputtering or evaporation, luminescent material to be coated in
The mode such as spin coating, spraying, sputtering, evaporation, printing can be adopted on nanometer metal structure.
Led illuminator, including pcb substrate, the multiple led being arranged on pcb substrate, is arranged on sending out on pcb substrate
Optical assembly, above-mentioned luminescence component is the luminescence component or luminous using any of the above-described manufacture method making in any of the above-described scheme
Assembly.In this programme, the nanometer metal structure of luminescence component and luminous material layer place surface perpendicular to pcb base plan, and
Luminescence component is provided with nanometer metal structure and luminous material layer on the side of led so that the light that sends of each led is equal
At least one that can irradiate or be reflected at least one luminescence component has on the surface of luminous material layer so that led and sending out
Optical assembly can give full play to luminous efficiency, if luminescence component has two or more faces to be close to led, this two sides or multiaspect
It is provided with nanometer metal structure layer and luminous material layer.In this programme, led can be for launching monochromatic light (as blue light)
Or the led of different-colour white light, in the luminaire, some light that led launches can pass through direct irradiation or reflection
To luminescence component surface, and luminescence component is excited to send the light of specific wavelength, thus the light that sends of led itself, luminescence component are subject to
Excite the light sending all to emit from light-emitting window via after the internal mixed light of led illuminator to led.
Further, the quantity of above-mentioned luminescence component is four, is shaped as tabular, four luminescence components surround a rectangle
Frame, led is trapped among in rectangle frame, and wherein, the nanometer metal structure of four luminescence components and luminous material layer are located at luminescence component
On the surface of led, that is, it is located on rectangle frame inner surface, can be well matched with lighting with the led of rectangle inframe, improve and send out
Light efficiency.
Further, above-mentioned luminescence component is shaped as cylindrical shape or taper tubular, and its surfaces externally and internally is provided with nanometer gold
Belong to structure and luminous material layer, above-mentioned led part is located in luminescence component, be partly located at outside luminescence component, can simultaneously with send out
The cooperation of optical assembly surfaces externally and internally is luminous, and improves luminous efficiency.
With respect to prior art, the invention has the advantages that and beneficial effect:
1st, the nano metal that can produce surface plasma excimer enhancement effect is tied by the luminescence component of the present invention well
Structure is effectively integrated with luminescent material, has good luminescent properties, be effectively utilized nanometer under the exciting of the shorter light of wavelength
Surface plasma excimer enhancement effect that metal structure produces is increasing substantially luminescent material and using this luminescence component
The luminous efficiency of led illuminator；
2nd, the luminescence component of the present invention is simple for assembly process；
3rd, the led illuminator structure using the luminescence component of the present invention is simple, have good luminescent properties, in it
The luminescence component in portion will not be stopped to the light that led sends and be absorbed, thus avoiding the impact of the light that led is sent.
Brief description
Fig. 1 is the structural representation of the luminescence component of the present invention；
Fig. 2 is the manufacturing flow chart of the luminescence component in embodiment 3；
Fig. 3 is the led illuminator structure schematic diagram in embodiment 3；
Fig. 4 is the structural representation of the luminescence component in embodiment 4；
Fig. 5 is the manufacturing flow chart of the luminescence component in embodiment 4；
Fig. 6 is the led illuminator structure schematic diagram in embodiment 4.
Marginal data: 1, luminescence component；11st, matrix；12nd, nanometer metal structure；13rd, luminous material layer；14th, metal
Layer；2nd, pcb substrate； 3、led；4th, remote fluorescence piece.
Specific embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is only limitted to this.
[embodiment 1]
As illustrated in figure 1 or 4, the luminescence component of the present embodiment, including matrix 11, can produce surface plasma excimer light
The nanometer metal structure 12 of enhancement effect and the luminous material layer 13 being coated on nanometer metal structure 12: wherein: nano metal
Structure 12 is arranged on matrix 11 surface, and it is shaped as island, and thickness is 5nm ~ 1 μm, and the metal of selection is gold, silver, aluminum, copper, platinum
In one or more alloy it is also possible to from one or more of nickel, titanium, cobalt, chromium, palladium, magnesium, zinc alloy, acceptable
Alloy from one or more of aforementioned all metals；Above-mentioned luminous material layer 13 thickness is 10nm ~ 1 μm, from organic
Luminescent material or particle diameter are phosphor or the combination of 1nm ~ 1 μm, wherein, luminous organic material and inorganic light-emitting
Material can be combined with arbitrary proportion, and can comprise multiple accordingly in luminous organic material and phosphor
Luminescent material.
The manufacture method of above-mentioned luminescence component includes 2 steps: prepares nanometer metal structure 12, is receiving on matrix 11 surface
Luminous material layer 13 is coated, wherein in rice metal structure 12:
Matrix 11 surface prepare nanometer metal structure 12 step particularly as follows: from gold, silver, aluminum, copper, nickel, titanium, cobalt, chromium,
The alloy of one or more in platinum, palladium, magnesium, zinc, forms thickness on matrix 11 surface by way of chemical plating or sputtering or evaporation
Spend the metal level 14 for 5nm ~ 1 μm, the matrix 11 defining metal level 14 is placed on the annealing of vacuum or inert gas shielding
In stove, by temperature control in 100 DEG C ~ 500 DEG C, carry out the annealing of 5 minutes ~ 5 hours, be subsequently cooled to room temperature formation and receive
Rice metal structure 12；
Coating luminous material layer 13 step on nanometer metal structure 12 is particularly as follows: from luminous organic material or particle diameter be
The phosphor of 1nm ~ 1 μm or combination as luminescent material, using spin coating, spraying, sputtering, evaporation, printing etc.
In mode, luminescent material is coated on nanometer metal structure 12 for any one, forms the luminescent material that thickness is 10nm ~ 1 μm coating
Layer 13.
[embodiment 2]
Luminescence component in the present embodiment is with the difference of embodiment 1, and nanometer metal structure 12 thickness is 5nm ~ 50nm,
The metal that it is selected is the alloy of one or more of gold, silver, aluminum；Above-mentioned phosphor is inorganic fluorescent powder or quantum
Wherein, inorganic fluorescent powder and quantum dot can be combined with arbitrary proportion, and the two can comprise phase for point or combination
The several luminescent substances answered.
In the present embodiment, luminous material layer 13 thickness is 50nm ~ 500nm, and phosphor is yag fluorescent material or cds amount
Son point or combination.
The manufacture method of the luminescence component in the present embodiment is selected in gold, silver, aluminum with embodiment 1, simply metal material
The alloy of one or more.
[embodiment 3]
The present embodiment is a kind of manufacture method of tabular luminescence component and the led illumination using this tabular luminescence component
Device embodiment.
Fig. 2 is the manufacture method of tabular luminescence component, and it includes four steps: 1., prepares flat ceramic matrix
11, matrix 11 surface is cleaned, dried；2., sputtering a layer thickness with the mode of magnetron sputtering on matrix 11 surface is
The metallic silver layer of 20nm；3., the semi-finished product that 2. step is obtained are placed in vacuum annealing furnace, anneal under 200 DEG C of environment
30 minutes, it is subsequently cooled to room temperature and takes out, its surface forms island nanometer metal structure 12；4., half 3. being obtained in step
The method of the surface spin coating of the nanometer metal structure 12 of finished product coats the yag:ce nano-phosphor that a layer thickness is 300nm and applies
Layer (i.e. luminous material layer 13).Tabular luminescence component 1 as shown in Figure 1 can be obtained by aforementioned four step.
Fig. 3 is the structural representation of the led illuminator using above-mentioned tabular luminescence component 1, this led illuminator bag
Include pcb substrate 2, the multiple led3 being arranged on pcb substrate 2,4 luminescence component 1(being arranged on pcb substrate 2 for ease of seeing
Examine this led illuminator internal structure, wherein 1 luminescence component 1 in figure is not shown), 4 luminescence components 1 surround a rectangle frame,
Led3 is trapped among in rectangle frame, wherein, the nanometer metal structure 12 of four luminescence components 1 and luminous material layer 13 are located at luminous group
Part 1 on the surface of led3, that is, is located at the medial surface of rectangle frame.Led illuminator in the present embodiment, on pcb substrate 2
Arrangement blue light led3 simultaneously realizes being electrically connected, and four pieces of tabular luminescence components 1 is assembled in this pcb substrate 1 surrounding and forms a square
Shape frame, led3 is surrounded wherein, top one piece of remote fluorescence piece 4(such as intematix chromalit of this rectangle frame)
Cover, form a flat board modulated structure.Under illuminating state, the blue light that front sends excites remote fluorescence piece 4 to send to blue light led3
First gold-tinted, and the blue light that side sends and the blue light being reflected back via remote fluorescence piece 4 understand the luminescence component 1 in surrounding for the irradiation
On, the luminescent material on luminescence component 1 is luminous in the presence of the surface plasma that nanometer metallic silver structure produces to be increased
Send the second gold-tinted by force.Blue light that led3 sends and the first gold-tinted that remote fluorescence piece 4 sends and luminescence component 1 send
Second gold-tinted is emitted with form of white light after the internal mixed light of flat lamp.
[embodiment 4]
The present embodiment is a kind of manufacture method of curved luminescence component and the led illumination dress using this curved surface luminescence component
Put embodiment.
Fig. 5 is a kind of manufacture method of curved luminescence component, and it also includes four steps: 1., selection one is reflecting cup-shaped
Shape die casting aluminum substrate 11, matrix 11 surfaces externally and internally cleans, dried；2., with the mode of chemical plating in the inside and outside table of matrix 11
The metallic silver layer that a layer thickness is 100nm is all plated in face；3., it is that the semi-finished product 2. being obtained step are placed on n 2 annealing stove
In, anneal 1 hour under 300 DEG C of environment, be subsequently cooled to room temperature and take out, form island nanometer gold in the surfaces externally and internally of matrix 11
Belong to structure 12；4., it is 200nm's that the method for the semi-finished product inner and outer surfaces spraying 3. being obtained in step coats a layer thickness
Cds quantum dot coating, obtains final curved luminescence component 2, and this curved luminescence component 2 structure is as shown in Figure 4.
Fig. 6 is the structural representation of the led illuminator using above-mentioned curved luminescence component, this led illuminator bag
Include pcb substrate 2, the led3 being arranged on pcb substrate 2, the luminescence component 1 being arranged on pcb substrate 2, above-mentioned luminescence component 1 shape
Shape is taper tubular, and its surfaces externally and internally is provided with nanometer metal structure 12 and luminous material layer 13, above-mentioned led3 part position
In luminescence component 1, partly it is located at outside luminescence component 1.In the present embodiment, on pcb substrate 2,5 colour temperatures of arrangement are 9000k's
White light led3 simultaneously realizes being electrically connected, and luminescence component 1 is arranged on above-mentioned pcb substrate 2, a middle led3 is placed in luminous group
In part 2, remaining four are placed in luminescence component 1 surrounding and are uniformly distributed, outside installation one diffusion shell, form a ball bulb lamp structure.
Under illuminating state, light can scatter led3 via the inner and outer surfaces of luminescence component 1, because led3 colour temperature is higher, unnecessary
Blue light ingredient can excite the luminescent quantum dot on luminescence component 1 to send gold-tinted, and this quantum dot produces in nanometer metal structure 12
Light in the presence of surface plasma and strengthened, the enhanced gold-tinted that these quantum dots are sent and led3 itself send
White light after the even light of mixed light and diffusion shell, make that bulb lamp sends uniformly and colour temperature is the white light of 6500k.
In addition to the embodiment in embodiment 3 and embodiment 4, in practical application, matrix 11 can also be curved, cylinder
Shape or other irregularly shaped, its material can be the material such as glass, plastics, metal, and this matrix 11 can be tied for integral type
Structure or separated structure, its Main Function is to effectively integrate nanometer metal structure and luminous material layer, is easy to apply
In led illuminator, therefore its shape and material can select as needed, different according to the shape of matrix 11 accordingly,
Led3 and luminescence component 1 mounting means on pcb substrate 2 can also be installed as needed, as long as the light that led3 will be made to send
Being capable of direct irradiation or excite luminous material layer 13 on luminescence component 1 to light and in nanometer metal structure by modes such as reflections
Obtain strengthening in the presence of the surface plasma of 12 generations.Additionally, the thickness of the nanometer metal structure 12 of luminescence component 1
The material of degree, material selection and luminous material layer 13, particle diameter, thickness can also select as needed.
[comparative example]
This comparative example is the fluorescence intensity contrast carrying out in the case of the material of luminous material layer and thickness identical, with right
On the basis of ratio a, the normalization fluorescence intensity of embodiment a enhances 20% with respect to comparative example a, and equally, embodiment b enhances
50%, embodiment c enhances 100%.By comparative example as can be seen that the luminescence component of nanometer metal structure is employed herein
Luminous material layer fluorescence intensity (or fluorescence intensity intensification factor) apparently higher than in comparative example not using nanometer metal structure
The luminous material layer fluorescence intensity (or fluorescence intensity intensification factor) of luminescence component.
The above is only the preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment,
All technical schemes belonging under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
For those of ordinary skill, some improvements and modifications without departing from the principles of the present invention, should be regarded as the protection of the present invention
Scope.
Claims (6)
1.led illuminator, including pcb substrate (2), multiple led(3 of being arranged on pcb substrate (2)) it is characterised in that also
Including the luminescence component (1) being arranged on pcb substrate (2), described luminescence component includes matrix (11), can produce surface plasma
The nanometer metal structure (12) of body excimer photo-enhancement effect and the luminous material layer (13) being coated on nanometer metal structure (12),
Described nanometer metal structure (12) is arranged on matrix (11) surface.
2. led illuminator according to claim 1 is it is characterised in that being shaped as of described nanometer metal structure (12)
Island, its thickness is 5nm ~ 1 μm；Described luminous material layer (13) thickness is 10nm ~ 1 μm.
3. led illuminator according to claim 2 it is characterised in that described nanometer metal structure (12) in select
Metal is the alloy of one or more of gold, silver, aluminum, copper, nickel, titanium, cobalt, chromium, platinum, palladium, magnesium, zinc, described luminous material layer
(13) phosphor that luminous organic material or particle diameter are 1nm ~ 1 μm or combination are selected.
4. led illuminator according to claim 3 it is characterised in that described nanometer metal structure (12) in select
Metal is the alloy of one or more of gold, silver, aluminum；Described phosphor be inorganic fluorescent powder or quantum dot or the two
Combination.
5. according to the arbitrary described led illuminator of Claims 1-4 it is characterised in that the quantity of described luminescence component (1)
For four, it is shaped as tabular, four luminescence components (1) surround a rectangle frame, by led(3) it is trapped among in rectangle frame, wherein,
The nanometer metal structure (12) of four luminescence components (1) and luminous material layer (13) are located at luminescence component (1) near led(3)
On surface.
6. according to the arbitrary described led illuminator of Claims 1-4 it is characterised in that described luminescence component (1) is shaped as
Cylindrical shape or taper tubular, its surfaces externally and internally is provided with nanometer metal structure (12) and luminous material layer (13), described led
(3) partly it is located in luminescence component (1), be partly located at luminescence component (1) outward.
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| CN104241552A (en) * | 2014-01-02 | 2014-12-24 | 上海大学 | Method for preparing OLED light-emitting device with metal-enhanced fluorescence outer conversion layer |
| KR101496609B1 (en) * | 2014-02-03 | 2015-02-26 | 재단법인 멀티스케일 에너지시스템 연구단 | Organic solar cell comprising nano-bump structure and process for preparing same |
| CN103956119A (en) * | 2014-04-30 | 2014-07-30 | 广东威创视讯科技股份有限公司 | Illuminating engine and manufacturing method of illumination engine |
| CN103956574B (en) * | 2014-05-21 | 2016-01-13 | 湖州泰和汽车零部件有限公司 | A kind of radar protective cover |
| CN103956573B (en) * | 2014-05-21 | 2016-02-24 | 湖州泰和汽车零部件有限公司 | A kind of preparation method of radar protective cover |
| CN106444155A (en) * | 2016-11-29 | 2017-02-22 | 天津市中环量子科技有限公司 | Backlight module and liquid crystal display |
| FR3064114A1 (en) * | 2017-03-15 | 2018-09-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | ORGANIC ELECTROLUMINESCENT DIODE WITH OPTIMIZED YIELD BY CONTAINING PLASMONS AND DISPLAY DEVICE COMPRISING A PLURALITY OF SUCH DIODES |
| CN109487221B (en) * | 2018-12-12 | 2021-04-02 | 中国科学院合肥物质科学研究院 | Ag-Au-Al-Cr-Cu nano composite film surface enhanced fluorescent substrate and preparation method thereof |
| CN111081844B (en) * | 2019-12-12 | 2021-04-09 | 荆门欧曼凯机电设备有限公司 | Linear curved surface light source production robot production line |
| CN111081843B (en) * | 2019-12-12 | 2021-04-09 | 荆门欧曼凯机电设备有限公司 | Linear curved surface light source production robot device |
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| CN201935074U (en) * | 2011-01-25 | 2011-08-17 | 苏州晶能科技有限公司 | LED (light-emitting diode) illuminating light source module with disinfecting and sterilizing functions |
| CN102382648B (en) * | 2011-09-22 | 2013-03-20 | 天津理工大学 | Method for enhancing photosynthesis spectral intensity of LED phosphor by using plasma |
| CN102593305B (en) * | 2012-03-21 | 2014-10-15 | 电子科技大学 | Metal periodic subwavelength structure on surface of light-emitting diode (LED) and preparation method for metal periodic subwavelength structure |
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