CN109473539A - 一种滤波器芯片模组及其制备方法 - Google Patents
一种滤波器芯片模组及其制备方法 Download PDFInfo
- Publication number
- CN109473539A CN109473539A CN201811534702.2A CN201811534702A CN109473539A CN 109473539 A CN109473539 A CN 109473539A CN 201811534702 A CN201811534702 A CN 201811534702A CN 109473539 A CN109473539 A CN 109473539A
- Authority
- CN
- China
- Prior art keywords
- filter chip
- package substrate
- pad
- filter
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 109
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000004033 plastic Substances 0.000 claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000005538 encapsulation Methods 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000012785 packaging film Substances 0.000 claims description 5
- 229920006280 packaging film Polymers 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000012536 packaging technology Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 55
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- -1 NiPdAu Chemical compound 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OMEOMNLLNWFZKO-UHFFFAOYSA-N [Au].[Ni].[Cu].[Ti] Chemical compound [Au].[Ni].[Cu].[Ti] OMEOMNLLNWFZKO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811534702.2A CN109473539B (zh) | 2018-12-14 | 2018-12-14 | 一种滤波器芯片模组及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811534702.2A CN109473539B (zh) | 2018-12-14 | 2018-12-14 | 一种滤波器芯片模组及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109473539A true CN109473539A (zh) | 2019-03-15 |
CN109473539B CN109473539B (zh) | 2024-04-12 |
Family
ID=65675523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811534702.2A Active CN109473539B (zh) | 2018-12-14 | 2018-12-14 | 一种滤波器芯片模组及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109473539B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110739391A (zh) * | 2019-10-24 | 2020-01-31 | 中芯集成电路制造(绍兴)有限公司 | 表面声波滤波器件及其制造方法 |
CN114284234A (zh) * | 2021-12-16 | 2022-04-05 | 深圳新声半导体有限公司 | 一种封装结构和用于封装结构的制作方法 |
CN114823651A (zh) * | 2022-04-06 | 2022-07-29 | 杭州道铭微电子有限公司 | 一种带有滤波器的射频***模块封装结构及方法 |
CN115642095A (zh) * | 2022-09-08 | 2023-01-24 | 武汉敏声新技术有限公司 | 一种射频模组封装结构及方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002100945A (ja) * | 2000-09-25 | 2002-04-05 | Tdk Corp | 弾性表面波装置およびその製造方法 |
US20020145362A1 (en) * | 2001-04-10 | 2002-10-10 | Murata Manufacturing Co., Ltd | Surface acoustic wave device, method for making the same, and communication apparatus including the same |
JP2005020423A (ja) * | 2003-06-26 | 2005-01-20 | Murata Mfg Co Ltd | 弾性表面波装置 |
CN102870326A (zh) * | 2010-05-07 | 2013-01-09 | 株式会社村田制作所 | 弹性表面波装置以及其制造方法 |
US20130119538A1 (en) * | 2011-11-16 | 2013-05-16 | Texas Instruments Incorporated | Wafer level chip size package |
CN105070699A (zh) * | 2015-07-31 | 2015-11-18 | 中国电子科技集团公司第二十六研究所 | 一种异构集成无源射频滤波器的射频前端模拟集成芯片 |
CN106549648A (zh) * | 2016-12-06 | 2017-03-29 | 深圳市麦高锐科技有限公司 | 一种芯片级封装的声表面波谐振器及制作工艺 |
CN107403771A (zh) * | 2017-08-21 | 2017-11-28 | 嘉盛半导体(苏州)有限公司 | 半导体封装结构及其封装方法 |
CN108598254A (zh) * | 2018-04-19 | 2018-09-28 | 嘉盛半导体(苏州)有限公司 | 滤波器封装方法及封装结构 |
CN209029415U (zh) * | 2018-12-14 | 2019-06-25 | 苏州科阳光电科技有限公司 | 一种滤波器芯片模组 |
-
2018
- 2018-12-14 CN CN201811534702.2A patent/CN109473539B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002100945A (ja) * | 2000-09-25 | 2002-04-05 | Tdk Corp | 弾性表面波装置およびその製造方法 |
US20020145362A1 (en) * | 2001-04-10 | 2002-10-10 | Murata Manufacturing Co., Ltd | Surface acoustic wave device, method for making the same, and communication apparatus including the same |
JP2005020423A (ja) * | 2003-06-26 | 2005-01-20 | Murata Mfg Co Ltd | 弾性表面波装置 |
CN102870326A (zh) * | 2010-05-07 | 2013-01-09 | 株式会社村田制作所 | 弹性表面波装置以及其制造方法 |
US20130119538A1 (en) * | 2011-11-16 | 2013-05-16 | Texas Instruments Incorporated | Wafer level chip size package |
CN105070699A (zh) * | 2015-07-31 | 2015-11-18 | 中国电子科技集团公司第二十六研究所 | 一种异构集成无源射频滤波器的射频前端模拟集成芯片 |
CN106549648A (zh) * | 2016-12-06 | 2017-03-29 | 深圳市麦高锐科技有限公司 | 一种芯片级封装的声表面波谐振器及制作工艺 |
CN107403771A (zh) * | 2017-08-21 | 2017-11-28 | 嘉盛半导体(苏州)有限公司 | 半导体封装结构及其封装方法 |
CN108598254A (zh) * | 2018-04-19 | 2018-09-28 | 嘉盛半导体(苏州)有限公司 | 滤波器封装方法及封装结构 |
CN209029415U (zh) * | 2018-12-14 | 2019-06-25 | 苏州科阳光电科技有限公司 | 一种滤波器芯片模组 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110739391A (zh) * | 2019-10-24 | 2020-01-31 | 中芯集成电路制造(绍兴)有限公司 | 表面声波滤波器件及其制造方法 |
CN110739391B (zh) * | 2019-10-24 | 2022-09-02 | 绍兴中芯集成电路制造股份有限公司 | 表面声波滤波器件及其制造方法 |
CN114284234A (zh) * | 2021-12-16 | 2022-04-05 | 深圳新声半导体有限公司 | 一种封装结构和用于封装结构的制作方法 |
CN114823651A (zh) * | 2022-04-06 | 2022-07-29 | 杭州道铭微电子有限公司 | 一种带有滤波器的射频***模块封装结构及方法 |
CN115642095A (zh) * | 2022-09-08 | 2023-01-24 | 武汉敏声新技术有限公司 | 一种射频模组封装结构及方法 |
CN115642095B (zh) * | 2022-09-08 | 2024-03-29 | 武汉敏声新技术有限公司 | 一种射频模组封装结构及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109473539B (zh) | 2024-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109473539A (zh) | 一种滤波器芯片模组及其制备方法 | |
CN104681456B (zh) | 一种扇出型晶圆级封装方法 | |
TWI460845B (zh) | 具有區域陣列單元連接器之可堆疊模製微電子封裝 | |
CN102446882B (zh) | 一种半导体封装中封装***结构及制造方法 | |
JP4757398B2 (ja) | 半導体装置の製造方法 | |
US20080230898A1 (en) | Semiconductor device and method for manufacturing thereof | |
JP2003115560A (ja) | 半導体装置、積層半導体装置、半導体装置の製造方法及び積層半導体装置の製造方法 | |
CN107331625A (zh) | 半导体器件的封装结构及其制作方法 | |
CN102800662A (zh) | 层叠型半导体装置及其制造方法 | |
JP2006203149A (ja) | 電子部品及びその製造方法 | |
CN104409437B (zh) | 双面bump芯片包封后重布线的封装结构及其制作方法 | |
CN103311204A (zh) | 倒装芯片封装技术和配置 | |
CN107706118A (zh) | 一种芯片封装方法及芯片封装结构 | |
US9972560B2 (en) | Lead frame and semiconductor device | |
CN209029415U (zh) | 一种滤波器芯片模组 | |
CN106744646A (zh) | Mems芯片封装结构以及封装方法 | |
CN113675102A (zh) | 用于芯片封装的方法和芯片颗粒 | |
CN112769411A (zh) | 一种声表面波芯片的晶圆级封装方法及装置 | |
CN113675101B (zh) | 用于芯片封装的方法和芯片颗粒 | |
TWI230426B (en) | Packaging method of integrated circuit | |
CN112768437B (zh) | 多层堆叠封装结构和多层堆叠封装结构的制备方法 | |
JPH08340081A (ja) | 半導体装置とその製造方法 | |
CN108598254A (zh) | 滤波器封装方法及封装结构 | |
CN112017974B (zh) | 一种芯片封装结构及封装方法 | |
JP2000150560A (ja) | バンプ形成方法及びバンプ形成用ボンディングツール、半導体ウエーハ、半導体チップ及び半導体装置並びにこれらの製造方法、回路基板並びに電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190624 Address after: 215143 Fangqiao Road, Caohu Industrial Park, Xiangcheng District, Suzhou City, Jiangsu Province, 568 Applicant after: SUZHOU KEYANG PHOTOELECTRIC SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 215143 Fangqiao Road, Caohu Industrial Park, Xiangcheng District, Suzhou City, Jiangsu Province, 568 Applicant before: SUZHOU KEYANG PHOTOELECTRIC SCIENCE & TECHNOLOGY Co.,Ltd. Applicant before: Wang Ziru |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Country or region after: China Address after: 215143 Fangqiao Road, Caohu Industrial Park, Xiangcheng District, Suzhou City, Jiangsu Province, 568 Applicant after: Suzhou Keyang Semiconductor Co.,Ltd. Address before: 215143 Fangqiao Road, Caohu Industrial Park, Xiangcheng District, Suzhou City, Jiangsu Province, 568 Applicant before: SUZHOU KEYANG PHOTOELECTRIC SCIENCE & TECHNOLOGY Co.,Ltd. Country or region before: China |
|
GR01 | Patent grant | ||
GR01 | Patent grant |