CN109473341A - A kind of processing technology of low-angle oxide layer step - Google Patents
A kind of processing technology of low-angle oxide layer step Download PDFInfo
- Publication number
- CN109473341A CN109473341A CN201811367571.3A CN201811367571A CN109473341A CN 109473341 A CN109473341 A CN 109473341A CN 201811367571 A CN201811367571 A CN 201811367571A CN 109473341 A CN109473341 A CN 109473341A
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- Prior art keywords
- oxide layer
- angle
- low
- processing technology
- layer step
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- 238000005516 engineering process Methods 0.000 title claims abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 230000002000 scavenging effect Effects 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- -1 HF and H2O Chemical compound 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 238000003754 machining Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000003672 processing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A kind of processing technology of low-angle oxide layer step.The wet corrosion technique being related in semiconductor processing technology.It proposes that a kind of clear logic, step is orderly, high in machining efficiency and processing cost is low, the processing technology of the low-angle oxide layer step of oxide layer step angle can be reduced significantly.The present invention is due to before photoetching, first oxidation layer surface will be cleaned with SC1 medical fluid, so as to effectively influence oxide layer surface nature, so that the adhesion of photoresist layer and oxide layer reduces after subsequent photoetching, and then finally influence the gap of corrosion, change corrosive side corruption angle, forms the oxide layer step of low-angle.There is the advantages of clear logic, step is orderly, high in machining efficiency and processing cost is low, can be reduced significantly oxide layer step angle on the whole.
Description
Technical field
The present invention relates to the wet corrosion techniques in semiconductor processing technology.
Background technique
Currently, in discrete device manufacturing technology, for the flat distribution for making silicon surface electric field under field plate, field plate structure
In oxide layer need to be formed by the main knot slope shape that gradually thickens outward, in field plate close to the marginal portion of main knot, oxide layer
Electric field that is more thin more advantageously reducing main knot, thus need using low-angle oxide layer step (i.e. oxide layer and photoresist it
Between need shape lesser angle at an angle, as shown in figure 5, A is the angle).However, by traditional handicraft carry out field oxidation,
After ring lithography corrosion process, oxide layer step angle A is difficult to contract usually at 50 DEG C or so adjusting photoetching and etching process
The small angle.
In this regard, proposing that injecting bombardment oxidation layer surface by using Ar+ causes its surface porosity in the prior art, to increase
In addition layer corrosion rate becomes faster, the processing method of the oxide layer step of low-angle at final processing, but such processing method works
It is inefficient；Meanwhile the usual cost of equipment needed for ion implantation technology is high, so that the processing cost pole of such processing method
It is high.
Summary of the invention
The present invention is in view of the above problems, propose that a kind of clear logic, step be orderly, high in machining efficiency and processing cost
It is low, the processing technology of the low-angle oxide layer step of oxide layer step angle can be reduced significantly.
The technical solution of the present invention is as follows: being processed according to the following steps:
1), field oxidation；
2) it, cleans: oxide layer being cleaned backwards to the surface of silicon by SC1 medical fluid, scavenging period 5 minutes, the SC1 medical fluid
Including NH4OH、H2O2And H2O, the NH4OH、H2O2And H2The volume ratio of O is 1:1:10；
3), photoetching；
4), corrode；It finishes.
The step 2 the following steps are included:
2.1), oxide layer is cleaned backwards to the surface of silicon by hydrofluoric acid, scavenging period 3 minutes；
2.2), oxide layer is cleaned again backwards to the surface of silicon by SC1 medical fluid, scavenging period 5 divides.
The hydrofluoric acid includes HF and H2O, the HF and H2The volume ratio of O is 1:100.
The present invention is due to will first clean oxidation layer surface with SC1 medical fluid, so as to effectively influence oxygen before photoetching
Change layer surface property, so that the adhesion of photoresist layer and oxide layer reduces after subsequent photoetching, and then finally influences between corroding
Gap changes corrosive side corruption angle, forms the oxide layer step of low-angle.On the whole have clear logic, step orderly, processing
The advantages of high-efficient and processing cost is low, can be reduced significantly oxide layer step angle.
Detailed description of the invention
Fig. 1 is the working condition of this case with reference to figure one,
Fig. 2 is the working condition of this case with reference to figure two,
Fig. 3 is the working condition of this case with reference to figure three,
Fig. 4 is the working condition of this case with reference to figure four,
Fig. 5 is the background technique schematic diagram of this case.
Specific embodiment
The present invention is as shown in Figs 1-4, is processed according to the following steps:
1), field oxidation；As shown in Figs. 1-2, oxidation is carried out on the surface of silicon (Si) form oxide layer (SiO2)；
2) it, cleans: oxide layer being cleaned backwards to the surface of silicon by SC1 medical fluid, scavenging period 5 minutes, the SC1 medical fluid
Including NH4OH、H2O2And H2O, the NH4OH、H2O2And H2The volume ratio of O is 1:1:10；
3), photoetching；As Figure 2-3, in oxide layer (SiO2) backwards to the side photoetching of silicon (Si), form photoresist layer；
4), corrode；As shown in Figure 3-4, photoresist and silica are corroded, structure needed for forming product；It finishes.
In this way, will first be cleaned to oxidation layer surface with SC1 medical fluid, since this case is before photoetching so as to effective shadow
Oxide layer surface nature is rung, so that the adhesion of photoresist layer and oxide layer reduces after subsequent photoetching, and then finally influences to corrode
Gap, change corrosive side corruption angle, form the oxide layer step of low-angle.
The step 2 the following steps are included:
2.1), oxide layer is cleaned backwards to the surface of silicon by hydrofluoric acid, scavenging period 3 minutes；
2.2), oxide layer is cleaned again backwards to the surface of silicon by SC1 medical fluid, scavenging period 5 divides.
The hydrofluoric acid includes HF and H2O, the HF and H2The volume ratio of O is 1:100.In this way, SC1 medical fluid can utilized
Before being cleaned, first passes through the surface layer the hardest to oxide layer HF and carry out a degree of corrosion, so as to be obviously improved
The cleaning effect of subsequent cleaning.
Claims (3)
1. a kind of processing technology of low-angle oxide layer step, which is characterized in that processed according to the following steps:
1), field oxidation；
2) it, cleans: oxide layer being cleaned backwards to the surface of silicon by SC1 medical fluid, scavenging period 5 minutes, the SC1 medical fluid
Including NH4OH、H2O2And H2O, the NH4OH、H2O2And H2The volume ratio of O is 1:1:10；
3), photoetching；
4), corrode；It finishes.
2. a kind of processing technology of low-angle oxide layer step according to claim 1, which is characterized in that the step 2
The following steps are included:
2.1), oxide layer is cleaned backwards to the surface of silicon by hydrofluoric acid, scavenging period 3 minutes；
2.2), oxide layer is cleaned again backwards to the surface of silicon by SC1 medical fluid, scavenging period 5 divides.
3. a kind of processing technology of low-angle oxide layer step according to claim 2, which is characterized in that the hydrofluoric acid
Including HF and H2O, the HF and H2The volume ratio of O is 1:100.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811367571.3A CN109473341A (en) | 2018-11-16 | 2018-11-16 | A kind of processing technology of low-angle oxide layer step |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811367571.3A CN109473341A (en) | 2018-11-16 | 2018-11-16 | A kind of processing technology of low-angle oxide layer step |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109473341A true CN109473341A (en) | 2019-03-15 |
Family
ID=65673861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811367571.3A Pending CN109473341A (en) | 2018-11-16 | 2018-11-16 | A kind of processing technology of low-angle oxide layer step |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109473341A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719468A (en) * | 2009-11-10 | 2010-06-02 | 上海宏力半导体制造有限公司 | Method for manufacturing oxide layer capable of reducing gradient of side wall |
| CN102709174A (en) * | 2012-06-01 | 2012-10-03 | 吉林华微电子股份有限公司 | Method for implanting argon ions into damaged oxide layer in advance to control corrosion angle |
| CN104350603A (en) * | 2012-03-31 | 2015-02-11 | 赛普拉斯半导体公司 | Integration of non-volatile charge trap memory devices and logic CMOS devices |
-
2018
- 2018-11-16 CN CN201811367571.3A patent/CN109473341A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719468A (en) * | 2009-11-10 | 2010-06-02 | 上海宏力半导体制造有限公司 | Method for manufacturing oxide layer capable of reducing gradient of side wall |
| CN104350603A (en) * | 2012-03-31 | 2015-02-11 | 赛普拉斯半导体公司 | Integration of non-volatile charge trap memory devices and logic CMOS devices |
| CN102709174A (en) * | 2012-06-01 | 2012-10-03 | 吉林华微电子股份有限公司 | Method for implanting argon ions into damaged oxide layer in advance to control corrosion angle |
Non-Patent Citations (1)
| Title |
|---|
| 张亚非 等: "《集成电路制造技术》", 31 October 2018 * |
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Application publication date: 20190315 |
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