CN109462213A - IC chip protection circuit against input over-voltage and its guard method - Google Patents
IC chip protection circuit against input over-voltage and its guard method Download PDFInfo
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- CN109462213A CN109462213A CN201811255278.8A CN201811255278A CN109462213A CN 109462213 A CN109462213 A CN 109462213A CN 201811255278 A CN201811255278 A CN 201811255278A CN 109462213 A CN109462213 A CN 109462213A
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 102
- 230000005611 electricity Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
- H02H3/202—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage for dc systems
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- Engineering & Computer Science (AREA)
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Abstract
The present invention provides a kind of IC chip protection circuit against input over-voltage and its guard method; wherein protection circuit includes metal-oxide-semiconductor and control circuit; the source electrode and drain electrode of metal-oxide-semiconductor is electrically connected with circuit input end and IC chip circuit respectively, and control circuit is connected between the source electrode of metal-oxide-semiconductor and grid；When the voltage of circuit input end input is less than or equal to predetermined voltage, there are potential differences between the source electrode and grid of control circuit control metal-oxide-semiconductor, metal-oxide-semiconductor conducting, when the voltage of circuit input end input is greater than predetermined voltage, control circuit controls and potential difference is not present between the source electrode and grid of metal-oxide-semiconductor, metal-oxide-semiconductor cut-off.Compared with prior art, the present invention having many advantages, such as that easy to use, at low cost, protection efficiency is high and deadline is fast.
Description
Technical field
The present invention relates to the protection field of circuit technology of IC chip, more particularly, to a kind of IC chip input overvoltage protection electricity
Road and its guard method.
Background technique
In the equipment containing circuit system, input voltage when being worked normally due to circuit system is not high, passes
The circuit system of system is that circuit is powered directly to IC chip.But when circuit system misconnection enters high pressure, high pressure can be by circuit system
IC chip in system is burnt out, so as to cause the damage of whole equipment.In order to solve this problem, IC chip is replaced with resistance to by people
The IC chip of high pressure, but high voltage bearing IC chip will lead to the rising of cost.
Summary of the invention
In order to overcome the above problem, the present invention provides a kind of IC chip protection circuit against input over-voltage and its guard method,
It is at low cost, and protection efficiency is high.
A kind of technical solution of the invention is: providing a kind of IC chip protection circuit against input over-voltage, including metal-oxide-semiconductor and control
Circuit, the source electrode and drain electrode of the metal-oxide-semiconductor are electrically connected with circuit input end and IC chip circuit respectively, and the control circuit connects
It connects between the source electrode and grid of the metal-oxide-semiconductor；It is described when the voltage of circuit input end input is less than or equal to predetermined voltage
Control circuit controls between the source electrode and grid of the metal-oxide-semiconductor there are potential difference, the metal-oxide-semiconductor conducting, when circuit input end is defeated
When the voltage entered is greater than predetermined voltage, the control circuit, which controls, is not present potential difference between the source electrode and grid of the metal-oxide-semiconductor,
The metal-oxide-semiconductor cut-off.
As improvement of the present invention, the control circuit include first switch circuit and with the first switch circuit simultaneously
First load of connection；When the voltage of circuit input end input is less than or equal to predetermined voltage, the first switch circuit is disconnected,
When the voltage of circuit input end input is greater than predetermined voltage, the first switch circuit is connected, first load short circuits.
As improvement of the present invention, the first switch circuit includes zener diode, the first triode and the first limit
The anode of current load, the zener diode passes through the first current limliting carrying ground, the cathode of the zener diode and institute
The base stage for stating the first triode is electrically connected, and the collector and emitter of first triode is connected to the source of the metal-oxide-semiconductor
Between pole and grid.
It further include the second load as improvement of the present invention, the grid of the metal-oxide-semiconductor is connect by second load
Ground.
It further include second switch circuit as improvement of the present invention, second load passes through the second switch electricity
Road ground connection.
As improvement of the present invention, the second switch circuit includes the load of the second current limliting, third current limliting load and the
One end of two triodes, signal control terminal and second current limliting load is electrically connected, a termination of the third current limliting load
The other end of ground, the other end of second current limliting load and the third current limliting load base with second triode respectively
Pole is electrically connected, and the collector and emitter of second triode is connected between second load and ground.
Another technical solution of the invention is: providing a kind of IC chip input over-voltage protection method, works as circuit input end
When the voltage of input is less than or equal to predetermined voltage, there are potential difference, institutes between the source electrode and grid of control circuit control metal-oxide-semiconductor
Metal-oxide-semiconductor conducting is stated, circuit input end provides electric energy to IC chip circuit by the metal-oxide-semiconductor；When the electricity of circuit input end input
When pressure is greater than predetermined voltage, the control circuit controls and potential difference is not present between the source electrode and grid of the metal-oxide-semiconductor, described
Metal-oxide-semiconductor cut-off, circuit input end stop providing electric energy to the IC chip circuit by the metal-oxide-semiconductor.
As improvement of the present invention, the control circuit include first switch circuit and with the first switch circuit simultaneously
First load of connection；When the voltage of circuit input end input is less than or equal to predetermined voltage, the first switch circuit is disconnected,
When the voltage of circuit input end input is greater than predetermined voltage, the first switch circuit is connected, first load short circuits.
As improvement of the present invention, when the voltage of circuit input end input is greater than predetermined voltage, the first switch
Zener diode conducting in circuit, the first switch circuit are connected.
As improvement of the present invention, second that the grid of second switch circuit control and the metal-oxide-semiconductor is electrically connected is negative
It carries ground connection or is disconnected with ground.
The present invention due to using metal-oxide-semiconductor and control circuit, the voltage that control circuit is inputted according to circuit input end it is big
It is small, metal-oxide-semiconductor on and off is controlled, and then control circuit input terminal is given or stops providing electric energy to IC chip circuit；It compares
The prior art, with metal-oxide-semiconductor and control circuit instead of high voltage bearing IC chip, and when the voltage of circuit input end input is greater than
When predetermined voltage, metal-oxide-semiconductor moment cut-off, the high pressure of input will not be conveyed to IC chip circuit by metal-oxide-semiconductor, have user
Just, at low cost, the advantages that protection efficiency is high and deadline is fast.
Detailed description of the invention
Fig. 1 is circuit principle structure schematic diagram of the invention.
Wherein: 1, control circuit；2, second switch circuit；3, IC chip circuit.
Specific embodiment
In the description of the present invention, it is to be understood that, "center" in term, "upper", "lower", "front", "rear", " left side ",
The orientation or positional relationship of instructions such as " right sides " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing this hair
Bright and simplified description, rather than the device or component of indication or suggestion meaning must have a particular orientation, with specific orientation
Construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are used for description purposes only,
It is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation " " connects
Connect ", " connected " shall be understood in a broad sense, for example, it may be being fixedly connected, be also possible to dismantling connection, or be integrally connected；It can be with
It is mechanical connection, is also possible to be electrically connected；It can be directly connected, be also possible to indirectly connected through an intermediary, can be
The connection of two component internals.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
The concrete meaning of invention.
Referring to Figure 1, it is a kind of IC chip protection circuit against input over-voltage, including metal-oxide-semiconductor Q11 and control that Fig. 1 is revealed
Circuit 1, the source electrode and drain electrode of the metal-oxide-semiconductor Q11 are electrically connected with circuit input end VIN and IC chip circuit 3 respectively, the control
Circuit 1 processed is connected between the source electrode and grid of the metal-oxide-semiconductor Q11.When the voltage of circuit input end VIN input is less than or equal to
When predetermined voltage, the control circuit 1 controls between the source electrode and grid of the metal-oxide-semiconductor Q11 that there are potential difference, the metal-oxide-semiconductors
Q11 conducting, when the voltage of circuit input end VIN input is greater than predetermined voltage, the control circuit 1 controls the metal-oxide-semiconductor Q11
Source electrode and grid between potential difference, metal-oxide-semiconductor Q11 cut-off is not present.
In the present embodiment, the metal-oxide-semiconductor Q11 is PMOS tube, and the metal-oxide-semiconductor Q11 can also be NMOS tube, the IC chip
Circuit 3 can be IC chip, be also possible to the circuit containing IC chip, and IC chip can be the chip of any model on the market.
Predetermined voltage mentioned here refers to that the voltage when IC chip circuit 3 works normally, predetermined voltage can be according to the IC
Chip circuit 3 is configured.
In the present embodiment, the control circuit 1 include first switch circuit (not identifying) and with the first switch circuit
First load R21 in parallel.The first switch circuit and the first load R21 form parallel circuit, the parallel circuit
Both ends connect respectively with the source electrode of the metal-oxide-semiconductor Q11 and grid.It should be noted that the first load R21 is the first electricity
Resistance, the first load R21 can also be the circuit of other structures, and the resistance value of the first load R21 can be according to practical need
It is selected.
When the voltage of circuit input end VIN input is less than or equal to predetermined voltage, the first switch circuit is disconnected, electricity
The electric current of road input terminal VIN input flows to the grid of the metal-oxide-semiconductor Q11 by the first load R21, at this moment described first
Certain voltage is had on load R21, it thus can there are potential differences between the source electrode and grid of the metal-oxide-semiconductor Q11.By institute
It states between the source electrode and grid of metal-oxide-semiconductor Q11 there are potential difference, so that the metal-oxide-semiconductor Q11 is connected.
When the voltage of circuit input end VIN input is greater than predetermined voltage, the first switch circuit is connected, circuit input
The electric current of end VIN input flows to the grid of the metal-oxide-semiconductor Q11 by the first switch circuit, at this moment the first load R21
Potential difference is not present in short circuit between the source electrode and grid of the metal-oxide-semiconductor Q11.Due to the metal-oxide-semiconductor Q11 source electrode and grid it
Between be not present potential difference so that the metal-oxide-semiconductor Q11 end.
In the present embodiment, the first switch circuit includes zener diode D, the first triode Q1 and the load of the first current limliting
The anode of R11, the zener diode D by first current limliting load R11 ground connection, the cathode of the zener diode D with
The base stage of the first triode Q1 is electrically connected, and the collector and emitter of the first triode Q1 is connected to the MOS
Between the source electrode and grid of pipe Q11.
When the voltage of circuit input end VIN input is less than or equal to predetermined voltage, the zener diode D is not turned on
(cut-off), the electric current of circuit input end VIN input flow to the grid of the metal-oxide-semiconductor Q11 by the first load R21, at this moment
Certain voltage is had on the first load R21, can thus there is electricity between the source electrode and grid of the metal-oxide-semiconductor Q11
Potential difference.Since there are potential differences between the source electrode and grid of the metal-oxide-semiconductor Q11, so that the metal-oxide-semiconductor Q11 is connected.
When the voltage of circuit input end VIN input is greater than predetermined voltage, the zener diode D is connected, circuit input
The electric current of end VIN input flows to the grid of the metal-oxide-semiconductor Q11 by the first switch circuit, at this moment the first load R21
Potential difference is not present in short circuit between the source electrode and grid of the metal-oxide-semiconductor Q11.Due to the metal-oxide-semiconductor Q11 source electrode and grid it
Between be not present potential difference so that the metal-oxide-semiconductor Q11 end.
As long as that is, circuit input end VIN input voltage be greater than predetermined voltage when, the zener diode D
It can be immediately turned on, the metal-oxide-semiconductor Q11 cut-off also ends therewith, and there is no delay cut-offs, i.e. circuit input end by the metal-oxide-semiconductor Q11
Mono- high input voltage of VIN (being greater than predetermined voltage), the metal-oxide-semiconductor Q11 just ended, and (voltage of input is greater than high voltage from the beginning to the end
Predetermined voltage) the IC chip circuit 3 will not be conveyed to by the metal-oxide-semiconductor Q11.There is no cut-off reactions by the metal-oxide-semiconductor Q11
Time, for the metal-oxide-semiconductor Q11 there is no delay cut-off, the metal-oxide-semiconductor Q11 deadline is fast, allows for protection efficiency height in this way,
Greatly reduce the risk that IC chip is burned out in the IC chip circuit 3.
It should be noted that the first triode Q1 is PNP pipe, the first triode Q1 can also be that NPN is managed, institute
The parameter for stating zener diode D can be selected according to actual needs, and the first current limliting load R11 is the first current limliting electricity
Resistance, the first current limliting load R11 can also be the circuit of other structures, and the resistance value of the first current limliting load R11 can root
It is selected according to actual needs.
In the present embodiment, further include the second load R22, the metal-oxide-semiconductor Q11 grid by it is described second load R22 connect
Ground.It should be noted that the second load R22 is second resistance, the second load R22 can also be the electricity of other structures
The resistance value on road, the second load R22 can be selected according to actual needs.
It further include second switch circuit 2 in the present embodiment, the second load R22 is connect by the second switch circuit 2
Ground.That is, controlling being switched on or switched off for the grid of the metal-oxide-semiconductor Q11 by the second switch circuit 2, that is, pass through institute
It states second switch circuit 2 and further controls being switched on or switched off for the metal-oxide-semiconductor Q11.
The second switch circuit 2 includes the second current limliting load R12, third current limliting load R13 and the second triode Q2, letter
One end of number control terminal IO and second current limliting load R12 are electrically connected, one end ground connection of the third current limliting load R13,
The other end of the other end of second current limliting load R12 and third current limliting load R13 respectively with second triode
The base stage of Q2 is electrically connected, and the collector and emitter of the second triode Q2 is connected to the second load R22 and ground
Between.
When the signal of signal control terminal IO input is high level, the grid of the metal-oxide-semiconductor Q11 is loaded by described second
R22 ground connection, the gate turn-on of the metal-oxide-semiconductor Q11.Only in the case where the gate turn-on of the metal-oxide-semiconductor Q11, the metal-oxide-semiconductor
Q11 just can be according to the circuit input end VIN voltage turn-on inputted or cut-off.When signal control terminal IO input signal be low level
When, the grid of the metal-oxide-semiconductor Q11 does not pass through the second load R22 ground connection, and the grid of the metal-oxide-semiconductor Q11 disconnects.It needs
Bright, when the voltage of circuit input end VIN input is greater than predetermined voltage, the first switch circuit is connected, and described first
R21 short circuit is loaded, at this time regardless of the signal of signal control terminal IO input is high level or low level, the source electrode of the metal-oxide-semiconductor Q11
Potential difference, the metal-oxide-semiconductor Q11 cut-off are not present between grid.
It should be noted that the second triode Q2 is NPN pipe, the second triode Q2 can also be PNP pipe, institute
Stating the second current limliting load R12 is the second current-limiting resistance, and the second current limliting load R12 can also be the circuit of other structures, institute
The resistance value for stating the second current limliting load R12 can be selected according to actual needs.The third current limliting load R13 is third current limliting
Resistance, third current limliting load R13 can also be the circuit of other structures, and the resistance value of the third current limliting load R13 can be with
It is selected according to actual needs.
The present invention also provides a kind of IC chips to input over-voltage protection method, in the method, will use IC chip input
The specific structure of overvoltage crowbar, IC chip protection circuit against input over-voltage refers to above content.In the method, work as circuit
When the voltage of input terminal input is less than or equal to predetermined voltage, control circuit, which controls, has electricity between the source electrode and grid of metal-oxide-semiconductor
Potential difference, the metal-oxide-semiconductor conducting, circuit input end provide electric energy to IC chip circuit by the metal-oxide-semiconductor；When circuit input end is defeated
When the voltage entered is greater than predetermined voltage, the control circuit, which controls, is not present potential difference between the source electrode and grid of the metal-oxide-semiconductor,
The metal-oxide-semiconductor cut-off, circuit input end stop providing electric energy to the IC chip circuit by the metal-oxide-semiconductor.That is, control
Potential difference between source electrode and grid of the circuit processed by controlling the metal-oxide-semiconductor, to control the on or off of the metal-oxide-semiconductor.
In the method, the control circuit include first switch circuit and with the first switch circuit in parallel first
Load；When the voltage of circuit input end input is less than or equal to predetermined voltage, the first switch circuit is disconnected, when circuit is defeated
When entering the voltage of end input greater than predetermined voltage, the first switch circuit is connected, first load short circuits.
In the method, when the voltage of circuit input end input is greater than predetermined voltage, in the first switch circuit
Zener diode conducting, the first switch circuit are connected.That is, being opened by zener diode control described first
Powered-down road is switched on or switched off.The second carrying ground that the grid of second switch circuit control and the metal-oxide-semiconductor is electrically connected or
It is disconnected with ground.
For the present invention due to using the metal-oxide-semiconductor and the control circuit, the control circuit is defeated according to circuit input end
The size of the voltage entered controls the metal-oxide-semiconductor on and off, and then control circuit input terminal is given or stops giving IC chip electricity
Road provides electric energy；Compared with prior art, with the metal-oxide-semiconductor and the control circuit instead of high voltage bearing IC chip, and work as
When the voltage of circuit input end input is greater than predetermined voltage, the metal-oxide-semiconductor moment cut-off, the high pressure of input will not be by described
Metal-oxide-semiconductor is conveyed to the IC chip circuit, has many advantages, such as that easy to use, at low cost, protection efficiency is high and deadline is fast.
It should be noted that explaining in detail for the respective embodiments described above, purpose, which is only that, solves the present invention
It releases, in order to be able to preferably explain the present invention, still, these descriptions cannot be with any explanation at being to limit of the invention
System, in particular, each feature described in various embodiments can also mutual any combination, to form other implementations
Mode, in addition to there is clearly opposite description, these features should be understood to can be applied in any one embodiment, and simultaneously
It is not only limited to described embodiment.
Claims (10)
1. a kind of IC chip protection circuit against input over-voltage, it is characterised in that: including metal-oxide-semiconductor and control circuit, the source of the metal-oxide-semiconductor
Pole and drain electrode are electrically connected with circuit input end and IC chip circuit respectively, and the control circuit is connected to the source of the metal-oxide-semiconductor
Between pole and grid；When the voltage of circuit input end input is less than or equal to predetermined voltage, described in the control circuit control
There are potential difference between the source electrode and grid of metal-oxide-semiconductor, the metal-oxide-semiconductor conducting makes a reservation for when the voltage of circuit input end input is greater than
When voltage, the control circuit is controlled there is no potential difference between the source electrode and grid of the metal-oxide-semiconductor, and the metal-oxide-semiconductor ends.
2. IC chip protection circuit against input over-voltage according to claim 1, it is characterised in that: the control circuit includes the
One switching circuit and with the first of the first switch circuit in parallel the load；When the voltage of circuit input end input is less than or equal to
When predetermined voltage, the first switch circuit is disconnected, when the voltage of circuit input end input is greater than predetermined voltage, described first
Switching circuit is connected, first load short circuits.
3. IC chip protection circuit against input over-voltage according to claim 2, it is characterised in that: the first switch circuit packet
Zener diode, the first triode and the load of the first current limliting are included, the anode of the zener diode is negative by first current limliting
Carry ground connection, the base stage electric connection of the cathode of the zener diode and first triode, the collection of first triode
Electrode and emitter are connected between the source electrode and grid of the metal-oxide-semiconductor.
4. IC chip protection circuit against input over-voltage according to claim 1, it is characterised in that: further include the second load, institute
The grid for stating metal-oxide-semiconductor passes through second carrying ground.
5. IC chip protection circuit against input over-voltage according to claim 4, it is characterised in that: further include second switch electricity
Road, second load pass through the second switch circuit ground.
6. IC chip protection circuit against input over-voltage according to claim 5, it is characterised in that: the second switch circuit packet
Include the load of the second current limliting, the load of third current limliting and the second triode, one end electricity of signal control terminal and second current limliting load
Property connection, one end ground connection of third current limliting load, the other end of the second current limliting load and third current limliting load
The other end be electrically connected respectively with the base stage of second triode, the connection of the collector and emitter of second triode
Between second load and ground.
7. a kind of IC chip inputs over-voltage protection method, it is characterised in that: when the voltage of circuit input end input is less than or equal to
When predetermined voltage, control circuit is controlled there are potential difference between the source electrode and grid of metal-oxide-semiconductor, and the metal-oxide-semiconductor is connected, circuit input
End provides electric energy to IC chip circuit by the metal-oxide-semiconductor；It is described when the voltage of circuit input end input is greater than predetermined voltage
Control circuit is controlled there is no potential difference between the source electrode and grid of the metal-oxide-semiconductor, and the metal-oxide-semiconductor ends, and circuit input end stops
Only electric energy is provided to the IC chip circuit by the metal-oxide-semiconductor.
8. IC chip according to claim 7 inputs over-voltage protection method, it is characterised in that: the control circuit includes the
One switching circuit and with the first of the first switch circuit in parallel the load；When the voltage of circuit input end input is less than or equal to
When predetermined voltage, the first switch circuit is disconnected, when the voltage of circuit input end input is greater than predetermined voltage, described first
Switching circuit is connected, first load short circuits.
9. IC chip according to claim 8 inputs over-voltage protection method, it is characterised in that: when circuit input end input
When voltage is greater than predetermined voltage, the zener diode in the first switch circuit is connected, and the first switch circuit is connected.
10. IC chip according to claim 7 inputs over-voltage protection method, it is characterised in that: second switch circuit control
It is disconnected with the second carrying ground of the grid electric connection of the metal-oxide-semiconductor or with ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811255278.8A CN109462213A (en) | 2018-10-26 | 2018-10-26 | IC chip protection circuit against input over-voltage and its guard method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811255278.8A CN109462213A (en) | 2018-10-26 | 2018-10-26 | IC chip protection circuit against input over-voltage and its guard method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109462213A true CN109462213A (en) | 2019-03-12 |
Family
ID=65608551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811255278.8A Withdrawn CN109462213A (en) | 2018-10-26 | 2018-10-26 | IC chip protection circuit against input over-voltage and its guard method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109462213A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2757400Y (en) * | 2004-12-29 | 2006-02-08 | 长春一汽启明信息技术股份有限公司 | Power module special for automobile |
| CN106505516A (en) * | 2016-11-21 | 2017-03-15 | 法乐第(北京)网络科技有限公司 | A kind of overvoltage crowbar and electronic control unit ECU output circuits |
| CN207283140U (en) * | 2017-09-22 | 2018-04-27 | 深圳市大地和电气股份有限公司 | A kind of overvoltage/undervoltage cut-off protection circuit |
| CN208939567U (en) * | 2018-10-26 | 2019-06-04 | 深圳市睿德电子实业有限公司 | IC chip protection circuit against input over-voltage |
-
2018
- 2018-10-26 CN CN201811255278.8A patent/CN109462213A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2757400Y (en) * | 2004-12-29 | 2006-02-08 | 长春一汽启明信息技术股份有限公司 | Power module special for automobile |
| CN106505516A (en) * | 2016-11-21 | 2017-03-15 | 法乐第(北京)网络科技有限公司 | A kind of overvoltage crowbar and electronic control unit ECU output circuits |
| CN207283140U (en) * | 2017-09-22 | 2018-04-27 | 深圳市大地和电气股份有限公司 | A kind of overvoltage/undervoltage cut-off protection circuit |
| CN208939567U (en) * | 2018-10-26 | 2019-06-04 | 深圳市睿德电子实业有限公司 | IC chip protection circuit against input over-voltage |
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Application publication date: 20190312 |