CN109459148A - Polarized ir sensor based on super surface FBAR resonance frequency temperature drift characteristic - Google Patents
Polarized ir sensor based on super surface FBAR resonance frequency temperature drift characteristic Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/58—Radiation pyrometry, e.g. infrared or optical thermometry using absorption; using extinction effect
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0265—Handheld, portable
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/59—Radiation pyrometry, e.g. infrared or optical thermometry using polarisation; Details thereof
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Abstract
Polarized ir sensor based on super surface FBAR resonance frequency temperature drift characteristic is related to infrared electronic technology field, it solves the problems, such as that absorptivity is lower in the prior art to be required to improve with infrared polarization sensor structure and performance, including sequentially connected reading IC substrate, thin film bulk acoustic wave resonator, metallic reflector, dielectric layer and metal array layer, metal array layer is made of a plurality of consistent metal units in characteristic direction.Non-refrigerating infrared sensor of the present invention realizes that the enhancing to infrared spectroscopy absorbs using metallic reflector, dielectric layer and metal array layer, the energy of absorption acts in thin film bulk acoustic wave resonator, the absorptivity of non-refrigerating infrared sensor is greatly improved, polarized light absorption is realized by metal array layer, and infrared polarization sensor is optimized in structure and performance；It is connected by integration mode, volume weight is small and low in cost；There is the advantages of traditional uncooled ir sensing, while response quickly, sensing sensitivity are high.
Description
Technical field
The present invention relates to infrared electronic technology fields, and in particular to based on the inclined of super surface FBAR resonance frequency temperature drift characteristic
Shake infrared sensor.
Background technique
Non-refrigeration type infrared sensor is also temperature sensor, can work at room temperature without refrigeration, therefore has
It is easier to portable.Non-refrigerating infrared sensor is usually heat sensor, that is, passes through the fuel factor of sensing infra-red radiation
Carry out work.Non-refrigerating infrared sensor is because which omits bulky, expensive refrigeration mechanisms, in volume, weight, longevity
Life, cost, power consumption, starting speed and stability etc. have advantage compared to refrigeration mode infrared sensor.But in response
Between, compared with refrigeration mode infrared sensor, there are gaps in terms of sensing sensitivity.
In recent years, with the development of micro-nano sensing technology, the application of thin film bulk acoustic wave resonator (FBAR) also extends to non-
Refrigerating infrared sensor field.On the one hand, thin film bulk acoustic wave resonator usually has miniature size, and external interference resistance is more
By force；On the other hand, thin film bulk acoustic wave resonator is usually operated at harmonic simulation, and has very high quality factor, so device
Show very high sensitivity；The non-refrigerating infrared sensor based on thin film bulk acoustic wave resonator is promoted to show in terms of two above
Outstanding signal-to-noise ratio index out.In addition, thin film bulk acoustic wave resonator uses frequency reading circuit mode, this kind of mode can be effective
Inhibit flicker noise (1/f noise).
However the sensing surface of thin film bulk acoustic wave resonator is lower to the absorptivity of infra-red radiation, generally less than 20%, and
It is no selective to radio-frequency spectrum is entered.So as to cause the non-refrigerating infrared sensor based on thin film bulk acoustic wave resonator to infra-red radiation
Absorptivity it is lower.
With the increasingly development of military protection technology, traditional infrared sensor can no longer meet right in complex background
In the requirement that target accurately senses.Infrared polarization sensing technology can obtain the intensity and polarization information of target emanation simultaneously, in puppet
The accuracy for guaranteeing sensing under the complex environments such as dress, smoke screen has revolutionary breakthrough for infrared detection technology.Therefore, city
Field has more urgent demand for high performance infrared polarization sensor.Infrared polarization sensing be generally divided into timesharing, divide amplitude,
Point aperture and several polarization technologies such as divide focal plane.Timesharing polarization sensor is to obtain different time by rotatory polarization piece
The information in the different polarization direction of point, although the simple structural instability of this technology method, is easy to produce the virtual image；Divide amplitude inclined
Vibration sensor is made of multiple and different focal planes, each focal plane optical path has the polarization polarizer of different directions, this
System can be effectively reduced the mobile caused virtual image of target, but capacity usage ratio is low, volume is big, expensive；Divide aperture polarization
Sensor is the different zones by light path control the image projection in different polarization direction to focal plane, compares and divides amplitude
System, its optical path is shorter, and optical path is not easily susceptible to interfere after alignment, but its spatial resolution is low, and volume weight is larger.So urgently
It a kind of need to have both the infrared polarization sensor that stability is high, capacity usage ratio is high, volume weight is small, at low cost.
Summary of the invention
To solve the above-mentioned problems, the present invention provides the polarized ir based on super surface FBAR resonance frequency temperature drift characteristic and passes
Sensor.
Used technical solution is as follows in order to solve the technical problem by the present invention:
Based on the polarized ir sensor of super surface FBAR resonance frequency temperature drift characteristic, including thin film bulk acoustic wave resonator,
The infrared sensor further includes the reading IC substrate for connecting thin film bulk acoustic wave resonator, is located at thin film bulk acoustic wave resonator
Metallic reflector on upper surface, the dielectric layer on metallic reflector upper surface and the metal on dielectric layer upper surface
Array layer, the metal array layer are made of a plurality of consistent metal units in characteristic direction.
The beneficial effects of the present invention are:
1, by the structure in thin film bulk acoustic wave resonator surface integrated metal reflecting layer, dielectric layer and metal array layer,
Realize that the enhancing to infrared spectroscopy absorbs using metal array layer, the energy of absorption acts in thin film bulk acoustic wave resonator, gram
The sensing surface of the thin film bulk acoustic wave resonator problem lower to the absorptivity of infra-red radiation is taken, by non-refrigerating infrared sensor
Absorptivity be increased to 80% or more.
2, polarized light absorption is realized by the metal array layer of the consistent metal unit composition in a plurality of characteristic directions, solved
Infrared polarization sensor image error as caused by the deviation of the alignment between polarizing film and imaging unit, stability are high；Directly
It connects and prepares micro-nano polarization structure in thin film bulk acoustic wave resonator, small volume, technique production is simple, greatly improves sensor
Response rate, simplify subsequent Optical System Design, infrared polarization sensor optimized in structure and performance.
3, non-refrigerating infrared sensor of the invention is membrane structure, and the uncooled ir compared to previous micro-bridge structure passes
Sensor has a clear superiority in terms of anti-seismic performance and pixel.
4, thin film bulk acoustic wave resonator, metallic reflector, dielectric layer and metal array layer are integrated in reading collection by the present invention
At in circuitry substrate, therefore there are the advantages such as Integrated manufacture, batch production, low in cost.
5, a kind of existing tradition of polarized ir sensor based on super surface FBAR resonance frequency temperature drift characteristic of the invention
Uncooled ir senses the advantages of low cost, miniaturization, high stability, long-life, and it is quick also to have both refrigeration mode infrared sensor
The advantages of response, high sensing sensitivity.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of non-refrigerating infrared sensor of the invention.
Fig. 2 is a kind of concrete structure diagram of the metal array layer of non-refrigerating infrared sensor of the invention.
Fig. 3 is another concrete structure diagram of the metal array layer of non-refrigerating infrared sensor of the invention.
Fig. 4 is the structural schematic diagram of the reading IC substrate of non-refrigerating infrared sensor of the invention.
Fig. 5 is the structural schematic diagram of the thin film bulk acoustic wave resonator of non-refrigerating infrared sensor of the invention.
Fig. 6 is the corresponding state diagram of preparation process S1 of non-refrigerating infrared sensor of the invention.
Fig. 7 is the corresponding state diagram of preparation process S2 of non-refrigerating infrared sensor of the invention.
Fig. 8 is the corresponding state diagram of preparation process S3 of non-refrigerating infrared sensor of the invention.
Fig. 9 is the corresponding state diagram of preparation process S4 of non-refrigerating infrared sensor of the invention.
Figure 10 is the corresponding state diagram of preparation process S5 of non-refrigerating infrared sensor of the invention.
Figure 11 is the corresponding state diagram of preparation process S6 of non-refrigerating infrared sensor of the invention.
Figure 12 is the corresponding state diagram of preparation process S7 of non-refrigerating infrared sensor of the invention.
Figure 13 is the corresponding state diagram of preparation process S8 of non-refrigerating infrared sensor of the invention.
Figure 14 is the corresponding state diagram of preparation process S9 of non-refrigerating infrared sensor of the invention.
Figure 15 is the corresponding state diagram of preparation process S10 of non-refrigerating infrared sensor of the invention.
Figure 16 is the corresponding state diagram of preparation process S11 of non-refrigerating infrared sensor of the invention.
Figure 17 is the corresponding state diagram of preparation process S12 of non-refrigerating infrared sensor of the invention.
Figure 18 is the corresponding state diagram of preparation process S13 of non-refrigerating infrared sensor of the invention.
Figure 19 is the corresponding state diagram of preparation process S14 of non-refrigerating infrared sensor of the invention.
In figure: 1, reading IC substrate, 1-1, the first underlayer electrode, 1-2, the second underlayer electrode, 1-3, substrate, 2,
Thin film bulk acoustic wave resonator, 2-1, top electrode, 2-.2, piezoelectric layer, 2-3, hearth electrode, 2-4, first electrode, 2-5, second electrode,
2-6, silicon base, 2-7, right through hole electrode, 2-8, left through hole electrode, 2-9, cavity, 2-17, right through-hole, 2-18, Zuo Tongkong, 2-
19, groove, 2-29, sacrificial layer, 3, polarization response structure, 3-1, metal array layer, 3-11, metal unit, 3-12, opening, 3-
2, dielectric layer, 3-3, metallic reflector, the 4, first articulamentum, the 5, second articulamentum.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
Based on the polarized ir sensor of super surface FBAR resonance frequency temperature drift characteristic, as shown in Figure 1, the infrared sensor
It further include reading IC substrate 1 (also known as ROIC substrate), thin film bulk acoustic wave resonator 2, metallic reflector 3-3, dielectric layer
3-2 and metal array layer 3-1 reads IC substrate 1, thin film bulk acoustic wave resonator 2, metallic reflector 3-3, dielectric layer 3-
2 and metal array layer 3-1 is sequentially connected, and thin film bulk acoustic wave resonator 2 is on reading IC substrate 1, metallic reflector
3-3 is located at 2 upper surface of thin film bulk acoustic wave resonator, dielectric layer 3-2 is located at the upper surface metallic reflector 3-3, metal array layer 3-1
Positioned at the upper surface dielectric layer 3-2.Metal array layer 3-1 is made of the consistent metal unit 3-11 in a plurality of characteristic directions.
The present invention is based on the polarized ir sensors of super surface FBAR resonance frequency temperature drift characteristic, provide a kind of based on gold
Belong to the non-refrigerating infrared sensor of reflecting layer 3-3,2 technology of dielectric layer 3-2, metal array layer 3-1 and thin film bulk acoustic wave resonator
Structure.Its sensor mechanism is using metal array layer 3-1, dielectric layer 3-2 and metallic reflector 3-3, realizes to infrared spectroscopy
Enhancing absorb, the energy of absorption acts in thin film bulk acoustic wave resonator 2, passes through detection 2 electricity of thin film bulk acoustic wave resonator
The variation of parameter, derives amount of infrared radiation.The present invention passes through in 2 surface integrated metal reflecting layer 3- of thin film bulk acoustic wave resonator
3, the structure of dielectric layer 3-2 and metal array layer 3-1 overcomes the sensing surface of thin film bulk acoustic wave resonator 2 to infra-red radiation
The lower problem of absorptivity, the absorptivity of non-refrigerating infrared sensor is increased to 80% or more, is also increased to incident light
The selectivity of spectrum.Metal array the layer 3-1, metallic reflector 3-3 of a plurality of consistent metal unit 3-11 compositions in characteristic direction,
Dielectric layer 3-2 and metal array layer 3-1 collectively forms polarization response structure 3, and polarization response structure 3 realizes polarized light absorption, solution
It has determined infrared polarization sensor image error as caused by the deviation of the alignment between polarizing film and imaging unit, stability is high；
Micro-nano polarization structure is directly prepared in thin film bulk acoustic wave resonator 2, that is, prepares the metal array layer 3-1 with polarization property,
Technique production is simple, and small volume greatly improves the response rate of sensor, simplifies subsequent Optical System Design, in structure
Infrared polarization sensor is optimized in performance (including spatial resolution).In addition, uncooled ir provided by the invention
Sensor is membrane structure, compared to previous micro-bridge structure non-refrigerating infrared sensor in anti-seismic performance and pixel consistency etc.
Aspect has a clear superiority.Pass through thin film bulk acoustic wave resonator 2, metallic reflector 3-3, dielectric layer 3-2 and metal array layer 3-1
It is integrated in and reads on IC substrate 1, therefore there are the advantages such as Integrated manufacture, batch production, low in cost.The non-brake method is red
The advantages of existing traditional uncooled ir of outer sensor senses low cost, miniaturization, high stability, long-life, also has both refrigeration
The advantages of type infrared sensor quick response, high sensing sensitivity.
Metal array layer 3-1 is made of this repetitive structure of metal unit 3-11, which has apparent direction
Feature, characteristic direction is consistent between metal unit 3-11.Direction and the characteristic direction phase one of metal unit 3-11 when polarised light
When cause, infrared radiation absorption is remarkably reinforced, that is, realizes polarization sensitive infrared absorption.Metal array layer 3-1 specifically may be used
To be as shown in Figure 2 and Figure 3, each metal unit 3-11 is equipped with the direction opening 3-12 between opening 3-12, metal unit 3-11
Identical, the metal unit 3-11 in Fig. 2 is U-shaped structure, and the U-shaped outer profile of Fig. 2 is the rectangle with opening 3-12, the U of Fig. 3
Type outer profile is the circle with opening 3-12.Two kinds of knots that Fig. 2 and Fig. 3 is the metal array layer 3-1 on dielectric layer 3-2
The citing of structure, but it is not limited to two kinds of structures of Fig. 2 and Fig. 3.
The material of metal array layer 3-1 generallys use Au, Ag, Al etc., but is not limited to these three metals；Metal array layer 3-
Common semiconductor technology and electron beam lithography can be used in 1 manufacture craft.The material of dielectric layer 3-2 generallys use Ge, MgF2、
SiO2Or AlN etc., but it is not limited to these materials.
Two underlayer electrodes that IC substrate 1 includes substrate 1-3 and is arranged on substrate 1-3 are read, are referred to as
First underlayer electrode 1-1 and the second underlayer electrode 1-2, as shown in figure 4, underlayer electrode connects substrate 1-3.Read integrated circuit lining
The function at bottom 1 is to read the electrical signal of thin film bulk acoustic wave resonator 2.The work of IC substrate 1 is typically read out in rf wave
Section, more specifically, reading the work of IC substrate 1 wave band (about 1GHz near the resonance frequency of thin film bulk acoustic wave resonator 2
~3GHz).
Thin film bulk acoustic wave resonator 2 include silicon base 2-6, cavity 2-9, hearth electrode 2-3, piezoelectric layer 2-2, top electrode 2-1,
Left through hole electrode 2-8, right through hole electrode 2-7, first electrode 2-4 and second electrode 2-5, specific structure are as shown in Figure 5.Silicon base
2-6 is equipped with left through-hole 2-18 and right through-hole 2-17, and left through hole electrode 2-8 is located in left through-hole 2-18, left through hole electrode 2-8 is filled out
Left through-hole 2-18 is filled, right through hole electrode 2-7 is located in right through-hole 2-17, right through hole electrode 2-7 fills right through-hole 2-17.First electricity
Pole 2-4 and second electrode 2-5 is arranged at the lower surface of silicon base 2-6, and first electrode 2-4 is connected under left through hole electrode 2-8
End, can be to be integrally formed with left through hole electrode 2-8, and second electrode 2-5 connects the lower end of right through hole electrode 2-7, can for
Right through hole electrode 2-7 is integrally formed.First electrode 2-4 connection reads the first underlayer electrode 1-1 of IC substrate 1, and second
Electrode 2-5 connection reads the second underlayer electrode 1-2 of IC substrate 1, and left through hole electrode 2-8 is connected by first electrode 2-4
IC substrate 1 is readed over out, right through hole electrode 2-7 reads IC substrate 1 by second electrode 2-5 connection.Cavity 2-9
Positioned at the upper surface of silicon base 2-6, hearth electrode 2-3 setting is located at bottom electricity in the upper surface of cavity 2-9 and silicon base 2-6, cavity 2-9
Between pole 2-3 and silicon base 2-6, hearth electrode 2-3 covers cavity 2-9, i.e. projected area of the cavity 2-9 on silicon base 2-6 is small
In projected area of the hearth electrode 2-3 on silicon base 2-6, that is, the space of centre of hearth electrode 2-3 and silicon base 2-6 are referred to as
For cavity 2-9, cavity 2-9 effect is to realize the reflection of sound wave, and mechanical energy is limited in inside thin film bulk acoustic wave resonator 2.Pressure
Electric layer 2-2 is arranged on the upper surface hearth electrode 2-3, and top electrode 2-1 is arranged on the upper surface piezoelectric layer 2-2, metallic reflector 3-3
It is arranged on the upper surface of top electrode 2-1, hearth electrode 2-3 connects the upper end of left through hole electrode 2-8, and top electrode 2-1 connection is right logical
The upper end of pore electrod 2-7.Preferably, projected area of the piezoelectric layer 2-2 on silicon base 2-6 is greater than cavity 2-9 in silicon base
Projected area on 2-6.
Above-mentioned hearth electrode 2-3 and top electrode 2-1 generallys use the materials such as Mo, W, Al, Pt or Ni.Piezoelectric layer 2-2 is logical
Frequently with AlN, ZnO, LiNbO3Or the materials such as quartz.Right through hole electrode 2-7, left through hole electrode 2-8, first electrode 2-4 and
Two electrode 2-5 generally use electroplating technology production, and optional material includes Au, Cu or Ni, but is not limited to these types of material.
Above-mentioned thin film bulk acoustic wave resonator 2 is connect with metallic reflector 3-3 can be directly connected to connect by first
The connection of layer 4 is connect, reading IC substrate 1 and thin film bulk acoustic wave resonator 2 can be directly connected to can also be by the second articulamentum 5
Connection, described second articulamentum 5 are connection electrode.
Infrared sensor of the invention further includes coaming plate and infrared window.Coaming plate is arranged on reading IC substrate 1,
Such as it is adhesive in by sealing and reads 1 upper surface of IC substrate.Infrared window is arranged on coaming plate, and infrared window position
In the surface of metal array layer 3-1, the infrared light infrared window is allowed to be radiated at the surface of metal array layer 3-1.It reads
IC substrate 1, coaming plate and infrared window collectively form seal chamber out, and according to the demand of operating condition, seal chamber is film
Bulk acoustic wave resonator 2, metallic reflector 3-3, dielectric layer 3-2 and metal array layer 3-1 provide vacuum environment.
Polarized ir sensor according to the present invention based on super surface FBAR resonance frequency temperature drift characteristic is provided based on super
The preparation method of the polarized ir sensor of surface FBAR resonance frequency temperature drift characteristic.Specific step is as follows:
S1, silicon base 2-6 is obtained
As shown in figure 4, obtaining silicon base 2-6；Silicon base 2-6, which is that common high resistant is double in semicon industry, throws silicon wafer.
S2, left through-hole 2-18, right through-hole 2-17 and groove 2-19 are prepared on silicon base 2-6
As shown in figure 5, it is (recessed in S12 to prepare left through-hole 2-18, right through-hole 2-17 and groove 2-19 on silicon base 2-6
Slot 2-19 cooperates hearth electrode 2-3 to become cavity 2-9).The preparation process of left through-hole 2-18 and right through-hole 2-17 generally use deep silicon
Ion reaction etching (DRIE).The preparation process of groove 2-19 can use dry or wet etch.
S3, production conductive electrode
As shown in fig. 6, preparing left through hole electrode 2-8 in left through-hole 2-18, right through-hole electricity is prepared in right through-hole 2-17
Pole 2-7 makes first electrode 2-4 in the lower surface of the lower end left through hole electrode 2-8, silicon base 2-6, at right through hole electrode 2-7
It holds, the lower surface of silicon base 2-6 makes second electrode 2-5.Left through hole electrode 2-8, right through hole electrode 2-7, first electrode 2-4 and
The preparation process of second electrode 2-5 generallys use electric plating method, and the material of plating can select Cu, Au or Ni etc..
S4, groove 2-19 is filled using sacrificial layer material
As shown in fig. 7, depositing the first sacrificial layer in the upper surface silicon base 2-6, the first sacrificial layer covers groove 2-19 and silicon
The upper surface substrate 2-6.The thickness of first sacrificial layer is greater than the depth of groove 2-19.The material of first sacrificial layer generallys use boron
Silica glass.First sacrificial layer and the second following sacrificial layers are referred to as sacrificial layer 2-29.
S5, the upper surface silicon base 2-6 is polished
As shown in figure 8, the upper surface silicon base 2-6 is carried out planarization process.Planarization generallys use chemical mechanical grinding
Technique.After silicon base 2-6 planarization, left through hole electrode 2-8 and right through hole electrode 2-7 is exposed in the upper surface silicon base 2-6, and first
Be known as the second sacrificial layer after sacrificial layer planarization, the second sacrificial layer exists only in groove 2-19, the second sacrificial layer upper surface with
The upper surface silicon base 2-6 is coplanar.
S6, hearth electrode 2-3 is prepared
As shown in figure 9, the upper surface silicon base 2-6 and the second sacrificial layer upper surface after the completion of S5 prepare hearth electrode 2-3.
The one end hearth electrode 2-3 is connect with the upper end of left through hole electrode 2-8, and hearth electrode 2-3 covers the second sacrificial layer.The system of hearth electrode 2-3
The standby technique for generalling use magnetron sputtering.
S7, piezoelectric layer 2-2 is prepared
As shown in Figure 10, piezoelectric layer 2-2 is prepared on the upper surface hearth electrode 2-3.Preferably, piezoelectric layer 2-2 is in silicon substrate
Projected area on the 2-6 of bottom is greater than the projected area of groove 2-19 (i.e. the cavity 2-9 of S12) on silicon base 2-6.Piezoelectric layer 2-
2 generally use the method preparation of chemical vapor deposition.
S8, top electrode 2-1 is prepared
As shown in figure 11, top electrode 2-1 is prepared on the upper surface piezoelectric layer 2-2.One end of top electrode 2-1 and right through-hole electricity
Pole 2-7 connection.The technique that the preparation of top electrode 2-1 generallys use magnetron sputtering.
S9, metallic reflector 3-3 is prepared
As shown in figure 12, metallic reflector 3-3 is prepared on the upper surface top electrode 2-1.Metallic reflector 3-3 is generallyd use
The preparation of the method for sputtering or vacuum evaporation, the area of metallic reflector 3-3 are less than top electrode 2-1.
S10, preparation media layer 3-2
As shown in figure 13, the preparation media layer 3-2 on the upper surface metallic reflector 3-3.The preparation of dielectric layer 3-2 is usually adopted
With processes such as sputtering or vacuum evaporations.Dielectric layer 3-2 area is usually less than equal to metallic reflector 3-3 area, medium
The area of the lower surface of layer 3-2 is less than or equal to the area of the upper surface metallic reflector 3-3.
S11, metal array layer 3-1 is prepared
As shown in figure 14, metal array layer 3-1 is prepared on the upper surface dielectric layer 3-2, obtains polarization response structure at this time
3.Metal array layer 3-1 can be completed using the techniques such as photoetching or electron beam lithography, removing.
S12, etching sacrificial layer 2-29 are to obtain cavity 2-9
As shown in figure 15, the second sacrificial layer is discharged, obtains cavity 2-9 to get thin film bulk acoustic wave resonator 2 is arrived, at this time partially
Vibration response structure 3 and thin film bulk acoustic wave resonator 2 are connection status.Above-mentioned cavity 2-9 can be using HF solution wet etching the
Two sacrificial layers are obtained using the second sacrificial layer of gaseous state HF dry etching.
S13, preparation read IC substrate 1
As shown in figure 16, preparation reads IC substrate 1.
S14, reading IC substrate 1 is bonded with thin film bulk acoustic wave resonator 2
As shown in figure 17, by way of bonding, thin film bulk acoustic wave resonator 2 is connect with IC substrate 1 is read,
Obtain non-refrigerating infrared sensor.Namely the first underlayer electrode 1-1 is connected with first electrode 2-4, by the second underlayer electrode
1-2 is connected with second electrode 2-5.Bonding pattern generallys use metal heat pressing bonding technology.
S15, encapsulation
The obtained device of S14 is packaged.Coaming plate glue is on reading IC substrate 1, then by infrared window chewing-gum
The even top of coaming plate reads IC substrate 1, coaming plate and infrared window and forms seal chamber.Coaming plate can using silicon wafer wafer,
Sheet glass or ceramic packaging structure etc..The seal chamber can be wanted according to thin film bulk acoustic wave resonator 2 and polarization response structure 3
It asks, seal chamber is vacuumized.Preparation is completed.
Above-mentioned manufacturing method by thin film bulk acoustic wave resonator 2, metallic reflector 3-3, is situated between by MEMS micro-processing method
Matter layer 3-2 and metal array layer 3-1 be integrated in read IC substrate 1 on, therefore have Integrated manufacture, batch production, at
Originally the advantages such as cheap.
Claims (7)
1. based on the polarized ir sensor of super surface FBAR resonance frequency temperature drift characteristic, including thin film bulk acoustic wave resonator (2),
It is characterized in that, the infrared sensor further includes the reading IC substrate (1) for connecting thin film bulk acoustic wave resonator (2), position
In on thin film bulk acoustic wave resonator (2) upper surface metallic reflector (3-3), be located at the upper surface metallic reflector (3-3) on
Dielectric layer (3-2) and the metal array layer (3-1) being located on the upper surface dielectric layer (3-2), the metal array layer (3-1) is by multiple
The several consistent metal unit in characteristic direction (3-11) compositions.
2. the polarized ir sensor as described in claim 1 based on super surface FBAR resonance frequency temperature drift characteristic, feature
It is, each metal unit (3-11) is equipped with opening (3-12), the direction opening (3-12) phase between metal unit (3-11)
Together.
3. the polarized ir sensor as described in claim 1 based on super surface FBAR resonance frequency temperature drift characteristic, feature
It is, the reading IC substrate (1) includes substrate (1-3) and underlayer electrode, and the quantity of the underlayer electrode is two,
Underlayer electrode is located on the upper surface substrate (1-3), and underlayer electrode connects substrate (1-3) and thin film bulk acoustic wave resonator (2).
4. the polarized ir sensor as claimed in claim 3 based on super surface FBAR resonance frequency temperature drift characteristic, feature
It is, the thin film bulk acoustic wave resonator (2) includes silicon base (2-6), cavity (2-9), hearth electrode (2-3), piezoelectric layer (2-
2), top electrode (2-1), left through hole electrode (2-8), right through hole electrode (2-7), first electrode (2-4) and second electrode (2-5),
First electrode (2-4) and second electrode (2-5) are respectively positioned on the silicon base lower surface (2-6) and correspondingly two substrates of connection
Electrode, left through hole electrode (2-8) and right through hole electrode (2-7) are located in silicon base (2-6) and the first electrode that connects one to one
(2-4) and second electrode (2-5), hearth electrode (2-3) connect left through hole electrode (2-8) and are located on silicon base (2-6), cavity
(2-9) is located between silicon base (2-6) and hearth electrode (2-3), and projected area of the cavity (2-9) on silicon base (2-6) is small
In projected area of the hearth electrode (2-3) on silicon base (2-6), piezoelectric layer (2-2) is arranged on the upper surface hearth electrode (2-3),
Top electrode (2-1) is arranged on the upper surface piezoelectric layer (2-2) and the right through hole electrode (2-7) of connection, the upper surface of top electrode (2-1)
Upper setting metallic reflector (3-3).
5. the polarized ir sensor as claimed in claim 4 based on super surface FBAR resonance frequency temperature drift characteristic, feature
It is, the piezoelectric layer (2-2) is greater than the throwing of cavity (2-9) on silicon base (2-6) in the projected area on silicon base (2-6)
Shadow area.
6. the polarized ir sensor as claimed in claim 4 based on super surface FBAR resonance frequency temperature drift characteristic, feature
It is, the material of the metal array layer (3-1) is Au, Ag or Al；The material of dielectric layer (3-2) is Ge, MgF2、SiO2Or
AlN；The material of hearth electrode (2-3) and top electrode (2-1) is Mo, W, Al, Pt or Ni；The material of piezoelectric layer (2-2) be AlN,
ZnO、LiNbO3Or quartz；Left through hole electrode (2-8), right through hole electrode (2-7), first electrode (2-4) and second electrode (2-5)
Material be Au, Cu or Ni.
7. the polarized ir sensor as described in claim 1 based on super surface FBAR resonance frequency temperature drift characteristic, feature
It is, infrared sensor further includes setting in the coaming plate read on IC substrate (1) and the infrared window being arranged on coaming plate
Mouthful, the infrared window is located at the surface of metal array layer (3-1), reads IC substrate (1), coaming plate and infrared window
Collectively form seal chamber.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690871A (en) * | 2019-09-20 | 2020-01-14 | 中国科学院长春光学精密机械与物理研究所 | Film bulk acoustic resonator with heat insulation structure and preparation method thereof |
| CN113219567A (en) * | 2021-05-10 | 2021-08-06 | 东北师范大学 | Long-wave infrared broadband polarization sensitive absorber based on simple grid structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007036915A (en) * | 2005-07-29 | 2007-02-08 | Doshisha | High-order mode thin film resonator |
| CN103413795A (en) * | 2013-08-28 | 2013-11-27 | 天津大学 | Semiconductor device packing structure and semiconductor device packing technological process |
| CN104030234A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor |
| CN203998935U (en) * | 2014-06-04 | 2014-12-10 | 江苏艾伦摩尔微电子科技有限公司 | The MEMS infrared sensor of based thin film bulk acoustic wave resonator |
| CN107171076A (en) * | 2017-05-27 | 2017-09-15 | 西南大学 | A kind of multiband circular polarizer based on the super surface of chiral |
| CN107357054A (en) * | 2017-08-01 | 2017-11-17 | 中国科学院半导体研究所 | A kind of Reflective spatial light beam polarisation distribution regulates and controls device |
| CN107589540A (en) * | 2017-10-31 | 2018-01-16 | 重庆大学 | Birefringent phase regulates and controls super surface texture unit, wideband polarization and phase regulation and control array and device |
| CN107741278A (en) * | 2017-09-30 | 2018-02-27 | 烟台睿创微纳技术股份有限公司 | A kind of non refrigerating infrared imaging sensor based on super surface and preparation method thereof |
| CN108110419A (en) * | 2017-12-14 | 2018-06-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of method for correcting radome boresight error |
-
2018
- 2018-11-12 CN CN201811341023.3A patent/CN109459148B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007036915A (en) * | 2005-07-29 | 2007-02-08 | Doshisha | High-order mode thin film resonator |
| CN103413795A (en) * | 2013-08-28 | 2013-11-27 | 天津大学 | Semiconductor device packing structure and semiconductor device packing technological process |
| CN104030234A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor |
| CN203998935U (en) * | 2014-06-04 | 2014-12-10 | 江苏艾伦摩尔微电子科技有限公司 | The MEMS infrared sensor of based thin film bulk acoustic wave resonator |
| CN107171076A (en) * | 2017-05-27 | 2017-09-15 | 西南大学 | A kind of multiband circular polarizer based on the super surface of chiral |
| CN107357054A (en) * | 2017-08-01 | 2017-11-17 | 中国科学院半导体研究所 | A kind of Reflective spatial light beam polarisation distribution regulates and controls device |
| CN107741278A (en) * | 2017-09-30 | 2018-02-27 | 烟台睿创微纳技术股份有限公司 | A kind of non refrigerating infrared imaging sensor based on super surface and preparation method thereof |
| CN107589540A (en) * | 2017-10-31 | 2018-01-16 | 重庆大学 | Birefringent phase regulates and controls super surface texture unit, wideband polarization and phase regulation and control array and device |
| CN108110419A (en) * | 2017-12-14 | 2018-06-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of method for correcting radome boresight error |
Non-Patent Citations (2)
| Title |
|---|
| ZHENYUN QIAN等: "Narrowband MEMS resonant infrared detectors based on ultrathin perfect plasmonic absorbers", 《2016 IEEE SENSORS》 * |
| 金鹏程: "FBAR制备及应用研究", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690871A (en) * | 2019-09-20 | 2020-01-14 | 中国科学院长春光学精密机械与物理研究所 | Film bulk acoustic resonator with heat insulation structure and preparation method thereof |
| CN113219567A (en) * | 2021-05-10 | 2021-08-06 | 东北师范大学 | Long-wave infrared broadband polarization sensitive absorber based on simple grid structure |
| CN113219567B (en) * | 2021-05-10 | 2022-09-13 | 东北师范大学 | Long-wave infrared broadband polarization sensitive absorber based on simple grid structure |
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