CN109440070A - Sputtering target cooling device based on IBAD nano coating equipment - Google Patents
Sputtering target cooling device based on IBAD nano coating equipment Download PDFInfo
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- CN109440070A CN109440070A CN201811377820.7A CN201811377820A CN109440070A CN 109440070 A CN109440070 A CN 109440070A CN 201811377820 A CN201811377820 A CN 201811377820A CN 109440070 A CN109440070 A CN 109440070A
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- ibad
- cooling device
- sputtering target
- coating equipment
- nano coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of sputtering target cooling devices based on IBAD nano coating equipment, including integrally formed ontology, water inlet, water outlet and the guide groove for limiting cooling liquid are offered in the ontology, the water inlet and the water outlet are separately positioned on the both ends of the guide groove；The envelope of the guide groove is rectangle.The present invention can improve cooling effect while taking into account leakproofness.
Description
Technical field
The present invention relates to sputtering target cooling technology fields, and in particular to a kind of sputtering target based on IBAD nano coating equipment
Cooling device.
Background technique
Second generation high temperature superconducting materia has the characteristics that complete zero resistance nature and perfect diamganetism under low-temperature condition.
Its characteristic has huge application prospect in national defence, industry, scientific research, medical domain, and national governments all extremely pay attention to superconduction
Investigation of materials.Since the coherence length of two generation superconducting thin films only has 7nm, thin film grain-boundary angle is greater than 4 degree just will form weak company later
Effect is connect, to influence superconduction critical electric current.Since superconducting thin film belongs to polycrystal film, and we need the life on non-crystalline material
Long crystal film just must grow the thin of quasi- monocrystalline using IBAD (ion beam assisted depositing) on amorphous flexible matrix material
Film component.And this technique is the key that subsequent superconduction film layer seed layer, without this technique growth quasi- monocrystalline film there will be no
Superconducting thin film easily deliquesces again in performance since quasi- monocrystalline optical thickness of thin film only has several nano thickness and absorbs moisture, therefore
Research IBAD (ion beam assisted depositing) is particularly important.
Our company uses IBAD (ion beam assisted depositing) method to grow quasi- monocrystalline film at present.Radio-frequency ion source electric discharge will
Ar ion with positive electricity is assembled, is then passed through by the positively charged Ar ion and electronegative electronics that Ar gas is ionized into, screen
Apply negative bias voltage and the Ar ion acceleration with positive electricity is drawn into aperture plate, outermost ground connection aperture plate can allow secondary electron
Reflux, along with neutralize adaptation neutralization, so that ion source is sputtered work for a long time.Ar ion passes through acceleration
Pole back bias voltage, which accelerates to draw, very high energy and then carries out bombardment sputtering to target to which ion beam has, the film sputtered at
Branch is diffused into cavity wall and band matrix, since the arc panel near matrix is equipped with oxygen through-hole, is adsorbed on band base in this way
Ingredient and O are sputtered on body2Carry out the quasi- monocrystalline film needed for reaction generates.Since the ion beam launched is with very high
Kinetic energy, to keep target heated, if target can be made to crack impaired or non-uniform temperature in turn without suitable cooling device
Deposition rate is influenced, the stoicheiometry of film is influenced.Common magnetron sputtering apparatus is due to point event on backboard there are anode and cathode
This needs to have insulated since ceramics, and without applying negative voltage on IBAD equipment target, so cannot be used in structure design general
The water-cooling structure of logical magnetron sputtering.IBAD technique is required in 4.5*10-7It is carried out under the high vacuum of Torr, and this thin film composition pair
Water electrode is sensitivity, is easy to deliquesce, so this device must assure that leakproofness, and cannot destroy vacuum atmosphere, therefore how to design
Target cooling device becomes a crucial step in IBAD equipment.
Authorization Notice No. is that the patent of invention of CN 10555585B discloses a kind of sputtering target, including backboard, buffer board 3a,
Buffer board 3b, target and bond material are provided with cooling water stream channel on backboard.Point out that bond material will in its specification simultaneously
Target, backboard, buffer board 3a, buffer board 3b combine, but will affect the leakproofness of sputtering target using bond material, simultaneously
Bond material also will affect the cooling effect of sputtering target.In addition, the cooling duct being provided on backboard not can guarantee cooling water and
Backboard adequately contacts, and reduces the cooling effect of sputtering target.
Summary of the invention
It, can be the technical problem to be solved in the present invention is to provide a kind of sputtering target based on IBAD nano coating equipment
Cooling effect is improved while taking into account leakproofness.
In order to solve the above-mentioned technical problems, the present invention provides a kind of, and the sputtering target based on IBAD nano coating equipment is cooling
Device, which is characterized in that including integrally formed ontology, water inlet, water outlet and cold for limiting are offered in the ontology
But the guide groove of liquid, the water inlet and the water outlet are separately positioned on the both ends of the guide groove；The guide groove
Envelope is rectangle.
Further, the guide groove is opened up along the track of SIN function or cosine function, the SIN function or described
The maximum value of cosine function is less than the 1/2 of the body width.
Further, the track of the guide groove is Lissajous curves, and Lissajou's figure is along the harmonic motion side of X-axis and Y-axis
Journey is represented by
X=A 1sin (m ω t+ φ 1)
Y=A 2sin (n ω t+ φ 2)
Frequency ratio is m: n in formula, and frequency parameter m and n are relatively prime positive integer；φ 1 and φ 2 is first phase position parameter, Lisa
As the track figure line of particle in figure and movement trend depend on m, n and φ 1, φ 2.
Further, the frequency ratio of the Lissajous curves is 4:3,5:3 or 5:4.
Further, the position of the water inlet is higher than the position of the water outlet, and the plane where the water inlet
Angle with horizontal plane is 15-45 degree.
Further, the upper surface of the ontology is provided with heat conductive silica gel.
Further, the outer wall of the ontology be coated with silver layer, the silver layer with a thickness of 1-4um.
Further, the material of the ontology is one or more in silver, copper, gold, beryllium, aluminium, aluminium nitride, tungsten or iron.
Further, the body upper end with a thickness of 5-10mm.
Beneficial effects of the present invention:
1, guide groove can limit the flow direction of cooling fluid, increase ontology and cooling fluid using the direction that opens up of guide groove
Contact area, so as to improve the cooling effect of target body；
2, integrally formed ontology material avoids influence of the sealing element to cooling rate, to improve cooling effect；Together
When integrally formed structure avoid the drainage generated by leakproofness, reduce vacuum condition shadow due to sealing in target
Ring the quality of film layer and the continuity of production.
Detailed description of the invention
Fig. 1 is overall schematic of the invention；
Fig. 2 is partial schematic diagram of the invention；
Fig. 3 is the relationship of base vacuum and time in split type cooling device；
Fig. 4 is the relationship of vacuum indoor major residual gas content and time in split type cooling device；
Fig. 5 is the relationship of base vacuum and time in the present invention；
Fig. 6 is the relationship of vacuum indoor major residual gas content and time in the present invention；
Fig. 7 is half-peak breadth testing result in split type cooling device；
Fig. 8 is half-peak breadth testing result in the present invention.
Figure label explanation: 1, ontology；11, water inlet；12, water outlet；13, heat conductive silica gel；2, guide groove.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings and specific examples, so that those skilled in the art can be with
It more fully understands the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
Shown in referring to Fig.1, an embodiment of the sputtering target of the invention based on IBAD nano coating equipment, including ontology,
Because IBAD equipment is high to vacuum level requirements, need in 4.5*10-7Torr just can be carried out film preparation, while every time before technique
It needs to clear up target.Target is fixed on cooling device, cleaning target cooling device can be made to shake, will make screw loosening to
So that water is leaked outside, so that vacuum state can be destroyed, influences film preparation.Thus this body by integral forming in the present embodiment, is integrally formed
Ontology can reduce the aging because of sealing element, connection it is unstable and cleaning target generate leakproofness the problem of, it is thus possible to
Improve the stability of film layer.Meanwhile the material of ontology can select in silver, copper, gold, beryllium, aluminium, aluminium nitride, tungsten or iron it is a kind of or
It is a variety of；In conjunction with the coefficient of heat conduction and price of each material, the preferred copper of material of ontology in the present embodiment.It is thus integrally formed
Ontology can reduce the phenomenon that influencing its cooling effect because of the setting of sealing element.
Referring to Fig. 3-Fig. 6, the split type ontology vacuum in the prior art that Fig. 3 is shown, wherein ontology vacuum refers to very
Empty unit is in the case where equipment obstructed any gas, the attainable highest vacuum index of institute.Existing skill is shown in Fig. 4
The relationship of vacuum indoor major residual gas content and time in art.Fig. 5 is the relationship of base vacuum and time in the present invention,
It is corresponding with Fig. 3.Fig. 6 is the relationship of vacuum indoor major residual gas content and time in the present invention, corresponding with Fig. 4.From Fig. 3
With can be contrasted in the comparison of Fig. 5, Fig. 4 and Fig. 6 target is cooled down using integrally formed cooling device when, guaranteeing
While cooling effect, it is able to maintain the base vacuum of target, so as to improve the stability of film layer.Fig. 4 is utilized simultaneously
Comparison with Fig. 6 can be derived that integrally formed cooling device can effectively reduce H in vacuum equipment2The content of O, thus energy
Enough effective damages for reducing water to target film.To sum up the same of leakproofness can be being taken into account using integrally formed cooling device
Shi Tigao cooling effect.
Referring to Fig. 7 and Fig. 8, executed using identical standard technology, the survey of the split type cooling device indicated in Fig. 7
Test result, and the content of aqueous vapor compares height in the case where standard in the test result and vacuum, carries on the back device for cooling in target
The test result of the state of micro- leak is almost the same.According to measurement result it can be seen that the half-peak breadth of sample is apparently higher than 7 degree, no
Meet our quality requirement.The measurement result of the cooling device of integral type is shown in Fig. 8, which shows vacuum atmosphere
The content for enclosing middle aqueous vapor reaches our process requirements, and the half-peak breadth of 6 groups of samples maintains essentially in 5 degree or so, far below our 7
Scale is quasi-.Thus it can be concluded that the cooling device of integral type has preferable leakproofness, hence it is evident that improve cooling device leak
Phenomenon.
Referring to Figures 1 and 2, the outer wall of ontology be coated with silver layer, silver layer with a thickness of 1-4um.Coated on body outer wall
Silver layer can either reduce the oxidation of ontology, simultaneously as the thermal conductivity of silver is better than copper, thus also can be improved this using silver layer
The heat dissipation effect of body, and then the cooling to target is realized using the heat transfer of ontology and target.
Referring to Figures 1 and 2, the upper end of ontology with a thickness of 5-10mm, the thickness of the upper surface of ontology is thinned can
So that target body and cooling liquid carry out adequately heat transmitting, so as to improve cooling effect.
Referring to Figures 1 and 2, it is provided with cooling device in ontology, cooling device includes water inlet, water outlet and guide groove,
Inlet and outlet are separately positioned on the both ends of guiding groove body.Cooling liquid is flowed out from water inlet and is flowed to out through guide groove
The mouth of a river, the coolant liquid body in guide groove can be flowed along the direction that open up of guide groove, using cooling liquid and target body and ontology into
Row heat exchange, so as to be cooled down using cooling liquid to target body.The position of water inlet is higher than the position of water outlet, this reality
Applying the position of plane where water inlet and the angle of horizontal plane in example is 15-45 degree.Because the position of water inlet is higher than water outlet
Position, thus coolant liquid body can flow into water outlet from water inlet, to realize the sufficient heat of cooling liquid and target body
Exchange.
Referring to Figures 1 and 2, ontology is provided with heat conductive silica gel close to the outer wall of target, the material of heat conductive silica gel in the present embodiment
Preferred silica gel ceramics are expected, with good compression performance and excellent pyroconductivity.Thus utilize the performance energy of heat conductive silica gel
The enough further efficiency for improving heat transmitting, improves cooling effect.
Referring to Fig. 2, guide groove is along SIN function y=Asin (ω x+ φ)+k or cosine function y=Acos (ω x+ φ)+k
Track open up, in order to enable in guide groove cooling liquid continuity, the maximum value A of SIN function or the maximum of cosine function
Value A is respectively less than the 1/2 of body width.In addition, in order to enable the contact area of cooling liquid and target in guide groove is larger, angle
Speed w is larger so that guide groove open up it is closeer, so as to improve cooling effect.By the track of guide groove along sine
The track of function or cosine function opens up, and can guarantee to cool down liquid in the preferable situation of the cooling effect of target, facilitate
The processing of guide groove.
Referring to Fig. 2, in another embodiment, guide groove is opened up along Lissajous curves, Lissajou's figure along X-axis and Y-axis
Harmonic motion equation be represented by
X=A 1sin (m ω t+ φ 1)
Y=A 2sin (n ω t+ φ 2)
Frequency ratio is m: n in formula, and frequency parameter m and n are relatively prime positive integer；φ 1 and φ 2 is first phase position parameter, Lisa
As the track figure line of particle in figure and movement trend depend on m, n and φ 1, φ 2.By the track of guide groove along Lissajous curves
Track open up, the efficiency of the cooling liquid and target heat exchange that are capable of increasing in guide groove.While inlet and outlet
It position can be specifically selected according to m, n and φ 1, φ 2.Increase the heat exchange effect of cooling liquid and target in the present embodiment
Fruit, the frequency ratio of Lissajous curves are 4:3,5:3 or 5:4.
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention
It encloses without being limited thereto.Those skilled in the art's made equivalent substitute or transformation on the basis of the present invention, in the present invention
Protection scope within.Protection scope of the present invention is subject to claims.
Claims (9)
1. a kind of sputtering target cooling device based on IBAD nano coating equipment, which is characterized in that including integrally formed ontology,
Water inlet, water outlet and the guide groove for limiting cooling liquid, the water inlet and the water outlet are offered in the ontology
Mouth is separately positioned on the both ends of the guide groove；The envelope of the guide groove is rectangle.
2. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that described to lead
It is opened up to slot along the track of SIN function or cosine function, the maximum value of the SIN function or the cosine function is less than described
The 1/2 of body width.
3. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that described to lead
It is Lissajous curves to the track of slot, Lissajou's figure is represented by along the harmonic motion equation of X-axis and Y-axis
X=A 1sin (m ω t+ φ 1)
Y=A 2sin (n ω t+ φ 2)
Frequency ratio is m: n in formula, and frequency parameter m and n are relatively prime positive integer；φ 1 and φ 2 is first phase position parameter, Lissajous figure
The track figure line of particle and movement trend depend on m, n and φ 1, φ 2 in shape.
4. the sputtering target cooling device as claimed in claim 3 based on IBAD nano coating equipment, which is characterized in that the benefit
The frequency ratio of Sa such as curve is 4:3,5:3 or 5:4.
5. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that it is described into
The position at the mouth of a river is higher than the position of the water outlet, and the angle of the plane and horizontal plane where the water inlet is 15-45 degree.
6. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that described
The upper surface of body is provided with heat conductive silica gel.
7. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that described
The outer wall of body be coated with silver layer, the silver layer with a thickness of 1-4um.
8. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that described
The material of body is one or more in silver, copper, gold, beryllium, aluminium, aluminium nitride, tungsten or iron.
9. the sputtering target cooling device as described in claim 1 based on IBAD nano coating equipment, which is characterized in that described
Body upper end with a thickness of 5-10mm.
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| CN201811377820.7A CN109440070A (en) | 2018-11-19 | 2018-11-19 | Sputtering target cooling device based on IBAD nano coating equipment |
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| CN201811377820.7A CN109440070A (en) | 2018-11-19 | 2018-11-19 | Sputtering target cooling device based on IBAD nano coating equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128431A (en) * | 2020-01-02 | 2020-05-08 | 中国原子能科学研究院 | Method for preparing target for producing radioactive isotope, target body and assembly for bearing target |
| CN112410740A (en) * | 2020-11-19 | 2021-02-26 | 宁波江丰电子材料股份有限公司 | Target material cooling back plate and preparation method thereof |
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| US5262030A (en) * | 1992-01-15 | 1993-11-16 | Alum Rock Technology | Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates |
| CN1690246A (en) * | 2004-04-23 | 2005-11-02 | 黑罗伊斯有限公司 | Controlled cooling of sputter targets |
| CN101161855A (en) * | 2006-10-14 | 2008-04-16 | 中国科学院合肥物质科学研究院 | Magnetron sputtering cathode target for ultrahigh vacuum system |
| CN103695850A (en) * | 2013-12-27 | 2014-04-02 | 柳州百韧特先进材料有限公司 | Preparation method of solar battery CIGS (copper indium gallium selenium) target material |
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| CN206308414U (en) * | 2016-12-27 | 2017-07-07 | 上海子创镀膜技术有限公司 | A kind of novel planar negative electrode for improving target utilization |
| CN108149209A (en) * | 2017-12-26 | 2018-06-12 | 中国科学院电工研究所 | A kind of composite magnetic control sputtering cathode |
| CN108286038A (en) * | 2018-01-23 | 2018-07-17 | 温州职业技术学院 | Cold cathode arc plasma source and non-contact striking method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5262030A (en) * | 1992-01-15 | 1993-11-16 | Alum Rock Technology | Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates |
| CN1690246A (en) * | 2004-04-23 | 2005-11-02 | 黑罗伊斯有限公司 | Controlled cooling of sputter targets |
| CN101161855A (en) * | 2006-10-14 | 2008-04-16 | 中国科学院合肥物质科学研究院 | Magnetron sputtering cathode target for ultrahigh vacuum system |
| CN105189810A (en) * | 2013-05-15 | 2015-12-23 | 株式会社神户制钢所 | Film formation device and film formation method |
| CN103695850A (en) * | 2013-12-27 | 2014-04-02 | 柳州百韧特先进材料有限公司 | Preparation method of solar battery CIGS (copper indium gallium selenium) target material |
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| CN108149209A (en) * | 2017-12-26 | 2018-06-12 | 中国科学院电工研究所 | A kind of composite magnetic control sputtering cathode |
| CN108286038A (en) * | 2018-01-23 | 2018-07-17 | 温州职业技术学院 | Cold cathode arc plasma source and non-contact striking method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128431A (en) * | 2020-01-02 | 2020-05-08 | 中国原子能科学研究院 | Method for preparing target for producing radioactive isotope, target body and assembly for bearing target |
| CN112410740A (en) * | 2020-11-19 | 2021-02-26 | 宁波江丰电子材料股份有限公司 | Target material cooling back plate and preparation method thereof |
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