CN109415809B - Method and/or system for synthesizing zinc oxide (ZnO) - Google Patents

Method and/or system for synthesizing zinc oxide (ZnO) Download PDF

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CN109415809B
CN109415809B CN201780031214.7A CN201780031214A CN109415809B CN 109415809 B CN109415809 B CN 109415809B CN 201780031214 A CN201780031214 A CN 201780031214A CN 109415809 B CN109415809 B CN 109415809B
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chamber housing
wafer substrate
substrate holder
fluid
growth
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CN109415809A (en
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雅各布·J·理查森
埃万·C·奥哈拉
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Priority claimed from US15/099,573 external-priority patent/US10981800B2/en
Priority claimed from US15/099,575 external-priority patent/US10981801B2/en
Priority claimed from US15/099,580 external-priority patent/US10407315B2/en
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02554Oxides
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration

Abstract

Briefly described are embodiments of a system and/or method for synthesizing zinc oxide, including a chamber housing, a wafer substrate holder, a fluid processing system, and sequences for implementation. The chamber housing has a cylindrical-like shape and a cavity sized to receive and enclose the wafer substrate holder, and zinc oxide is heated to form a growth solution.

Description

Method and/or system for synthesizing zinc oxide (ZnO)
RELATED APPLICATIONS
The present PCT application claims the following benefits and priorities: U.S. non-provisional patent application serial No. 15/099,573 entitled "METHOD AND/OR SYSTEM FOR synthesizing ZINC OXIDE (ZnO)" filed 4/14/2016; U.S. non-provisional patent application serial No. 15/099,575 entitled "METHOD AND/OR SYSTEM FOR synthesizing ZINC OXIDE (ZnO)" filed 4/14/2016; U.S. non-provisional patent application serial No. 15/099,580 entitled "METHOD AND/OR SYSTEM FOR synthesizing ZINC OXIDE (ZnO)", filed on 14/4/2016, which is hereby incorporated by reference in its entirety.
Technical Field
The present disclosure relates to the synthesis of zinc oxide (ZnO), such as via growth and/or deposition processes.
Background
In the laboratory, ZnO may be synthesized, for example, via a process involving relatively low temperature aqueous solutions. The ability to synthesize ZnO may be useful, as a non-limiting example, for making transparent conductive contacts for gallium nitride (GaN) type Light Emitting Diodes (LEDs). However, more economical synthesis processes for use in industrial situations, such as for higher volume production, are still under development.
Drawings
The claimed subject matter is particularly pointed out and distinctly claimed in the concluding portion of the specification. The operating organization and/or method, however, together with objects, features, and/or advantages thereof, may best be understood by reference to the following detailed description when read with the accompanying drawings in which:
fig. 1 is a side view illustration of an embodiment of a chamber housing and a wafer substrate holder;
FIG. 2 is an isometric view illustration of the embodiment of FIG. 1;
FIG. 3 is a schematic view of an embodiment of a Fluid Handling System (FHS) capable of being used to synthesize zinc oxide comprising a chamber housing;
FIG. 4 is a flow diagram showing, at a high level, an embodiment of a process for synthesizing zinc oxide;
FIGS. 5 through 13 are flow diagrams illustrating particular embodiments of particular operations of the embodiment of FIG. 4 in greater detail;
fig. 14 is a schematic diagram illustrating an embodiment of a computing device as may be used to control a system, such as to direct an embodiment of a process for synthesizing zinc oxide.
In the following detailed description, reference is made to the accompanying drawings which form a part hereof wherein like numerals may designate corresponding and/or similar parts throughout. It will be appreciated that for simplicity and/or clarity of illustration, the drawings are not necessarily drawn to scale. For example, the dimensions of some of the aspects may be exaggerated relative to other aspects. Further, it is to be understood that other embodiments may be utilized. Moreover, structural and/or other changes may be made without departing from claimed subject matter. Throughout this specification, reference to "claimed subject matter" means subject matter that is intended to be covered by one or more claims, or any portion thereof, and is not necessarily intended to refer to the entire claim set, a particular combination of claim sets (e.g., method claims, apparatus claims, etc.), or a particular claim. It should also be noted that directions and/or references, e.g., up, down, top, bottom, etc., may be used to facilitate discussion of the figures and are not intended to limit application of the claimed subject matter. The following detailed description is, therefore, not to be taken in a limiting sense, and/or is not to be taken in a limiting sense.
Detailed Description
Reference throughout this specification to one implementation, one embodiment, example, etc., means that a particular feature, structure, characteristic, etc., described in connection with the particular implementation and/or example, is included in at least one implementation and/or example of claimed subject matter. Thus, the appearances of such phrases, for example, in various places throughout this specification are not necessarily intended to refer to the same implementation and/or embodiment or to any one particular implementation and/or embodiment. Furthermore, it is to be understood that the particular features, structures, characteristics, etc., described may be combined in various ways in one or more embodiments and/or examples and, thus, are within the intended scope of the claims. Of course, these and other issues may vary in a particular context of use, as has been the case in the specification of the patent application. In other words, throughout this disclosure, a particular description and/or usage context provides helpful guidance as to reasonable inferences to be drawn; likewise, however, "in this context" generally refers at least to the context of the present patent application without further limitation.
The synthesis of zinc oxide via relatively low temperature aqueous growth processes has been developed in the laboratory. Furthermore, as mentioned, the synthesis of zinc oxide can be used in various applications, including as a non-limiting example applications involving optoelectronics, such as the fabrication of transparent conductive contacts for GaN-type Light Emitting Diodes (LEDs), to name a few. However, adapting or converting a synthetic process developed in the laboratory to a commercially valuable industrial manufacturing process is a challenging and complex task.
Various considerations are involved. By way of illustration, consider the use of ZnO synthesis in optoelectronic devices. It would be desirable for the synthesis process to be conveniently aligned with other aspects of optoelectronic device fabrication, including operations that might occur to produce the final product, such as wafer cleaning, photoresist processing, plasma and/or wet chemical etching, vacuum deposition, chemical vapor deposition, annealing, chemical and mechanical polishing, dicing, wire bonding, potting, packaging, and the like. Furthermore, in order to have industrial utility, the synthesis process should be more economical than it might be in a laboratory setting where the synthesis process might have been created. The laboratory includes a relatively small background in terms of manufacturing scale, with a small number of manufacturing "lots" (run), and therefore the cost can often be relatively high, at least compared to commonly used industrial device manufacturing processes; however, to develop a working synthesis process, this is not uncommon.
After successful development of the working process, the focus can still shift to larger scale production, higher volumes, higher repetition rates, higher yields, fewer possible variations in quantities, and to lower costs. I.e. movement from laboratory development to industrial use drives this focus shift. Along these lines, it is desirable to design processes for use in industrial environments that are flexible enough and/or adaptable for use in several contexts and/or for several possible industrial applications; at the same time, however, the process should be sufficiently precise and accurate to enable the process to be repeated in the following manner: substantially the same result or output is produced if substantially the same process is followed. That is, substantially the same output should be produced if a particular concept is followed. Achieving this on a relatively large scale and at a relatively acceptable cost can be quite challenging and may involve careful process planning and/or orchestration. In addition, process limitations may also be a factor. That is, it is also desirable to understand the limitations of the process so that the consistency of quality and/or properties is not substantially compromised.
In an illustrative example, the zinc oxide aqueous growth solution may contain dissolved zinc, ammonia, and/or another source of complexing ligand that serves a similar function, as well as an acid or base to achieve the desired pH. The term "growth solution" refers to a solution in which synthesis (e.g., precipitation or deposition) of a material may occur, as for example, when the solution is supersaturated and the conditions for nucleation and/or for crystal growth are thermodynamically favorable. It should be noted that throughout this document, if used to refer to zinc oxide synthesized via a relatively low temperature aqueous process, the terms "growth" and "deposition" may be used interchangeably without loss or change of meaning. In this context, zinc oxide, which is used interchangeably with the term ZnO, includes materials having primarily zinc atoms and oxygen atoms arranged at least partially in a crystalline phase (e.g., crystal structure) of the zinc oxide, such as, for example, a wurtzite crystal structure. The zinc oxide crystals may contain atoms other than zinc and oxygen in a manner that: wherein those atoms replace zinc or oxygen atoms in the crystal structure and/or reside in interstitial regions of the crystal structure. The zinc oxide crystals may likewise contain atomic vacancies, dislocations, and/or other crystal defects, as well as secondary phase inclusions. The zinc can be supplied to the growth solution by various means, including by dissolving a zinc-containing compound, referred to in this context as a zinc nutrient.
In addition to ammonia, other sources of ammine ligand may be employed as well as other ligands that may, for example, yield similar solubility of ZnO. In this context, ammine compound is understood to mean a compound containing at least one ammine compound (-NH)3) A ligand in a metal complex of the ligand. Aqueous ammonia solutions dissolved in water are commonly referred to as ammonium hydroxide solutions, aqueous ammonia, household ammonia, and/or simply ammonia. The ammine ligand may also be supplied to the aqueous solution by dissolving the ammonium salt. Examples include, but are not limited to, simple inorganic and/or organic salts such as ammonium chloride, ammonium nitrate, ammonium acetate, ammonium carbonate, triammonium citrate, and the like. The ammine ligand may also be supplied as a soluble coordination compound or double salt. Alternatively, the ammine ligand may be supplied, for example, by in situ decomposition of another compound such as urea and/or hexamine. Other ligands that can form water complexes of zn (ii) can yield temperature ranges of decreasing solubility ZnO with increasing temperatures and can therefore also be used. (it should be noted that pressure may also affect the dissolution properties as well, but for the previous statement, atmospheric pressure is implicitly assumed). Other ligands that may behave in this manner include, but are not limited to, water-soluble primary, secondary, tertiary amines, and/or polyamines. It is possible to use also non-nitrogen containing ligands which form complexes and give the desired dissolution behavior of the ZnO as described before.
The synthesis of a material from one phase from another phase, such as zinc oxide crystallization using an aqueous growth solution, may involve nucleation. Different types of nucleation may be employed in the process for synthesizing one or more crystals of ZnO. For example, in one illustrative embodiment, a process for growing an epitaxial ZnO film from a relatively low temperature aqueous solution may be employed. For example, a zinc oxide film may be grown from an aqueous solution using a two-part process such that a first part effects nucleation, e.g., heteroepitaxial nucleation, of ZnO crystals on another material, e.g., GaN. Alternatively, nucleation and subsequent growth of ZnO films can also be achieved in a 1-part aqueous solution process. Alternatively, the synthesis of ZnO may comprise growth, e.g. deposition, on one or more existing ZnO crystals, which may or may not have been synthesized from an aqueous solution. Thus, the synthesis of zinc oxide via relatively low temperature aqueous processes can be varied in various ways that can affect the resulting material.
The rate of ZnO synthesis and/or the nature of the ZnO synthesized may be affected by various factors such as solution composition, circulation rate, volume, temperature, pressure, rate of temperature change, rate of pressure change, time under given process conditions, and the like. These factors can affect the intrinsic and extrinsic properties of the synthesized ZnO. Examples of intrinsic properties that may be affected may include: defect concentration, grain structure, porosity and/or density of the synthesized ZnO. Examples of extrinsic properties that may be affected may include: layer thickness, layer thickness uniformity and/or layer roughness of the synthesized ZnO. Thus, in general, at the high level, the process may comprise: conditions are created to produce ZnO synthesis from a supersaturated aqueous growth solution of dissolved zinc complex at an appropriate temperature and pH (and/or pressure, if appropriate). In one example embodiment, the synthesis of ZnO may include epitaxially growing ZnO from a dissolved zinc complex in solution. Thus, initially, it may be desirable, for example, to have a relatively high rate of supersaturation as in embodiments seeking to produce homogeneous or heterogeneous nucleation. However, depending on various factors, it may also be desirable, for example, if growth is taking place on pre-existing ZnO crystals, for example, the supersaturation rate decreases later or initially is lower for higher quality crystal growth after initial nucleation. In general, as set forth, various processes are possible and may be employed. Thus, for reasons such as those previously mentioned, a system that achieves the synthesis of ZnO via a relatively low temperature aqueous process but has a specific or limited set of process parameters that can be adjusted as appropriate for a given situation may be desirable, such as for industrial use.
Different processes may be employed to grow different physical forms and/or geometries. By way of non-limiting illustration, one or more zinc oxide crystals can, for example, form a single crystal, such as at least in part in at least one of the following forms: an epitaxial film; a single crystal film; single crystal particles; bulk single crystals, or arrays or patterns of micro-sized or smaller sized single crystal structures. Although claimed subject matter is not limited in scope in this respect, particles may generally be less than 100 microns, while bulk crystals may generally be greater than 100 microns. Likewise, one or more zinc oxide crystals may also form polycrystals, such as part of at least one of the following forms: a polycrystalline film; polycrystalline particles; bulk polycrystalline, or an array or pattern of micro-or smaller-sized polycrystalline structures.
It has been established that zinc oxide can be produced by various types of solution crystal growth and/or deposition techniques, including, for example, the example process embodiments previously mentioned. Likewise, relatively low temperature solution-type processes are known for the synthesis of zinc oxide in the form: nanostructures, particles and powders, polycrystalline films, epitaxial films, and/or bulk single crystals. Thus, as previously set forth and described in greater detail below, the process can be specifically tailored to incorporate various process parameter adjustments and/or modifications to synthesize zinc oxide crystals to produce desired results at least in growing zinc oxide having certain desired properties, but in a manner that is scalable, cost effective, and/or provides sufficient repeatability for use in industry.
Thus, as one illustrative example, a process may include at least partially growing one or more zinc oxide crystals in an aqueous solution, as for a particular application of the synthesized zinc oxide crystals. One or more zinc oxide crystals may be grown, for example, in a manner such that one or more resulting zinc oxide crystals may have physical properties that may make the resulting crystals more effective for a particular application. For example, as previously discussed, ZnO crystals may be grown in a manner that, at least relative to fully dense zinc oxide crystals, the ZnO crystals have improved properties for particular applications due, at least in part, to inter-crystalline porosity. See, for example, U.S. patent Application 14/341,700 filed by Richardson et al on 25.7.2014 entitled "contamination and/or Application of Zinc Oxide Crystals with Internal (inter-Crystalline) Porosity" which is incorporated herein by reference in its entirety. Thus, the one or more zinc oxide crystals may be grown in a manner so as to at least partially adjust the synthesis technique by a selected number of ways, e.g. to at least partially influence the formation of the one or more zinc oxide crystals and thus may likewise influence the physical properties of the material.
However, providing a strain that is able to partially modify the synthesis technique, the purpose of the synthesis may be to remain free from inadvertent alteration of the selected chemical composition of the aqueous solution from which the one or more ZnO crystals are to be synthesized. For example, changes in chemical composition, such as those that affect, at least in part, the pH, concentration and/or availability of the zinc complexing ligand, may change, at least in part, the solubility difference for a given temperature change (and/or pressure change) and may thus alter the ZnO crystal growth rate, where it is possible to alter the resulting crystal structure depending on the particular structure being sought.
In embodiments, the ZnO crystal growth rate may be at least partially affected by the supply of one or more ZnO crystals for reactants in the aqueous growth solution synthesized therefrom. For example, the aqueous growth solution from which the ZnO crystals are synthesized may be exchanged periodically and/or may be constantly flowing to provide a fresh supply of reactant species to replace those consumed by the synthesis. Thus, for example, exchange and/or flow rates may be desirable to alter ZnO crystal growth rates.
Likewise, in yet another process, the temperature (and/or pressure) of one or more ZnO crystals during synthesis and/or the temperature (and/or pressure) of one or more ZnO crystals for the aqueous solution synthesized therefrom may at least partially affect the crystal growth rate. Similar to the foregoing processes, for example, higher temperatures during synthesis at least theoretically allow more atoms added to the surface of the growing crystal to find lower energy configurations. For example, again at least theoretically, higher temperatures provide additional energy for atom movement and for overcoming the activation energy barrier. For the synthesis of one or more ZnO crystals from aqueous solution, again, theoretically lower temperatures may be expected to produce higher residual hydrogen and atomic vacancies in the ZnO crystals, depending on the amount of incomplete conversion of soluble Zn ions containing hydroxyl ligands.
Thus, as discussed, embodiments of a system for synthesizing zinc oxide can include a crystal growth solution employed in an environment where synthesis parameters can be adjusted, such as, for example, adjusting temperature and/or pressure during crystal growth. Likewise, modifications such as supply, flow and/or circulation of the crystal growth solution may be employed in embodiments. Likewise, any combination of the foregoing may of course be employed in embodiments such that the properties of the synthetic material, such as zinc oxide, may be affected. However, as noted, having the system have certain limitations on possible modifications, such as to processes, process sequences, operation sequences, and operations, including limitations on the amount of possible adjustments, on the types of possible adjustments, and/or on the sizes of possible adjustments, may also provide benefits for reasons related to scalability, cost, and/or repeatability.
Thus, in embodiments, a system apparatus for synthesizing a material solution, such as zinc oxide, on a wafer, wafer substrate, other substrate, and/or other surface from an ambient growth solution may be employed. However, the variation of parameters used to drive the underlying chemical reaction and the synthesis of crystals in solution may include selected sets such as heating, increasing pressure and/or adjusting fluid flow. It should be noted that the term "wafer substrate" is used as a generic and interchangeable term with "substrate," wafer, "and/or" other surface. In other words, these terms are used interchangeably without loss of generality or understanding and generally refer to a surface capable of supporting a material in aqueous solution on which a synthetic species such as zinc oxide is grown.
In one embodiment, a wafer substrate holder and a chamber housing may be used, wherein the wafer substrate holder is received within the chamber housing such that the wafer substrate holder is capable of (e.g., for) rotating about an axis at least substantially normal to a planar surface formed by the one or more wafer substrates held therein and at least substantially through a center of the one or more wafer substrates held therein when holding the one or more wafer substrates. This may include, for example, two or more coplanar wafer substrates with the axis of rotation passing substantially through the center of the array of wafer substrates. It should be noted that the wafer substrate being held is stationary relative to the wafer substrate holder even when the wafer substrate holder may be rotating. It should further be noted that the following terms are used interchangeably throughout this document without loss or change of meaning: a chamber, a chamber housing, a growth chamber, a deposition chamber, a synthesis chamber, etc.
Thus, in an example embodiment, a plurality of (e.g., at least two for this non-limiting example) wafer substrates may be placed in a wafer substrate holder that positions the plurality of wafer substrates at set intervals from their flat surfaces aligned at least substantially parallel to each other and at least substantially axial through their centers. In an embodiment, the chamber housing may be cylindrical-like in shape with ends that are also at least substantially parallel to each other and at least substantially axially aligned with the planar surface on which the wafer substrate is to be loaded. During a Growth Process Formulation (GPF) operation, for example, in one embodiment, a liquid growth solution can fill the chamber enclosure as described, and synthesis can occur such that zinc oxide crystals can form, or existing zinc oxide crystals can be grown on, for example, a wafer substrate that is also encapsulated therein, as a result of heating and/or increased pressure with respect to the contents of the chamber enclosure (e.g., growth solution, wafer substrate, etc.). Although in some embodiments, the zinc oxide crystals may be grown on either or both planar surfaces of the wafer substrate, for particular embodiments, as explained in more detail later, the synthesis of zinc oxide may occur on the first surface rather than the second surface of the wafer substrate.
In embodiments, the rotational action of a wafer substrate holder as shown, for example, in fig. 1 and 2, may provide relatively uniform growth characteristics within the chamber housing with respect to the wafer substrate to be held while rotation occurs. The rotation may cause the growth solution to mix in a manner that provides a relatively more consistent homogeneous solution temperature and/or chemical composition. The gradient of the solution temperature and/or chemical composition can be averaged by continuously moving through the solution via rotation, in particular relative to the surface of the wafer substrate. In embodiments, the wafer substrate holder is relatively open to allow sufficient growth solution to flow around and between the wafer substrates. For example, in embodiments, it is desirable not to block the flow of solution unnecessarily.
In one embodiment, the portion of the wafer substrate holder further from the axis of rotation is relatively closer to the cylindrical wall of the chamber housing. Thus, moving closer to the chamber housing may result in increased solution mixing closer to the wall. This may increase convective heat transfer from the chamber housing wall to the encapsulating solution and may therefore improve solution temperature uniformity. Likewise, in embodiments where the heat source is relatively close to the wall, this may also reduce the risk of overheating the solution immediately adjacent to the wall, thereby reducing the risk of unwanted synthesis and/or growth of material on the chamber housing wall.
In embodiments having axisymmetric characteristics, as shown in fig. 1 and 2, for example, the wafer substrate volume and/or chamber housing length can be extended with an associated proportional increase in chamber housing volume, cylindrical chamber wall area, and wafer substrate surface area (for uniform wafer substrate spacing). Thus, for a given embodiment of the chamber enclosure, any wafer substrate has a growth environment corresponding to any other similar wafer substrate (ignoring differences in growth environment for terminal wafer substrates as compared to non-terminal wafer substrates). Thus, as chamber enclosure size and/or wafer substrate capacity may be increased, wafer production benefits may similarly scale. That is, substantial degradation of the quality of the growing material or substantial changes in intrinsic and/or extrinsic properties (if any) should not be caused by, for example, linear scaling of the length and wafer volume within the chamber housing. Thus, relatively high growth synthesis uniformity as well as intrinsic scalability is provided in embodiments. The larger wafer substrates per lot in this embodiment should allow for increased production rates that may help provide a process with improved industrial utility.
Embodiments also provide Fluid Handling Systems (FHS) to at least partially support programmable control and/or monitoring of synthesis and/or other associated processes to be performed. In embodiments, the system can be programmed in advance to fill and cubic the chamber housing with growth solution before and after completing one cycle of a planned (e.g., programmed) growth process (e.g., Growth Process Formulation (GPF)) and managing relatively high precision flow filling of growth solution, even when, for example, the wafer substrate holder is rotating during execution of the cycle. Embodiments may also be capable of being programmed to manage filling and draining, respectively, the chamber enclosure and certain portions of the fluid processing system, for example, with rinsing and/or cleaning fluids (rather than growth solutions).
Embodiments of FHS, such as for a relatively low temperature aqueous solution zinc oxide growth system (ZGS), may employ a "closed" interconnection network that includes fluid valves, fluid lines, one or more process parameter sensors, one or more pressure vessels, one or more fluid pumps, one or more fluid sources, and/or one or more fluid drains (e.g., collection points). For example, valves, such as fluid valves, can be opened and closed, respectively, to direct fluid flow along a path to and from the chamber enclosure, typically at least partially via a control system, to perform a process, a sequence of process operations, and/or process operations, such as, for example, for a Growth Process Formulation (GPF) cycle. In this context, a control system refers to a system embodiment that is capable of affecting, in whole or at least in part, the performance and/or execution of a process that includes its operations and/or sequence of operations. Likewise, the term "control" refers to the ability to influence, in whole or at least in part, the progress of a particular process embodiment involving its operation and/or sequence of operations.
For example, the valve may be operated under electronic control, which may be provided, for example, at least in part by a control system. As another example, the valve may be pneumatically controlled, wherein the pneumatic signal may in turn be at least partially provided again by a device under electronic control, as provided by e.g. a control system. Sensors placed at path locations along which the fluid may likewise flow may monitor process embodiments, including their operations and/or sequences of operations, e.g., to confirm performance of one or more desired operations and/or to make real-time adjustments as appropriate. For example, mechanisms for driving rotation and for heating and/or pressurizing the growth solution contained in the chamber housing are also included.
In embodiments, the surface of the Fluid Handling System (FHS) that may be in contact with the growth solution, the cleaning fluid and/or the cleaning fluid should be formed of, for example, high purity, corrosion resistant and/or contamination resistant materials. Examples include fluoropolymers, other engineered polymers, and/or other engineered elastomers. In embodiments, as set forth, the interconnected network of combined components may form a "closed" fluid treatment system that can be integrated with a control system. The term "close," in addition to by programmed control and/or intentional manual intervention, refers to the lack of additional material introduced into or removed from an embodiment of the FHS. This can be contrasted with other fluid treatment systems, such as open baths, where a substance can be treated; however, contact with and/or introduction and/or loss of substances such as, for example, water or ammonia vapor, in a manner not specifically contemplated in the process, may also occur. Possible benefits associated with this latter difference in the process have been discussed previously.
For example, as suggested, in a particular zinc oxide Growth Process Formulation (GPF), a particular growth solution having a particular chemical composition may be employed. Thus, during synthesis, it may be desirable, for example, to not inadvertently alter the selected chemical composition of the aqueous solution used to synthesize the one or more ZnO crystals. Conversely, changes in chemical composition, such as those that at least partially affect the pH, concentration and/or availability of the zinc complexing ligand, may at least partially alter, for example, the solubility difference for a given temperature change (and/or a given pressure change) and may thus alter the ZnO crystal growth rate, where it is possible to alter the resulting crystal structure and/or properties depending on the particular structure and/or properties being sought. In an embodiment, one way to achieve this result may be through the use of an embodiment of a closed (e.g., so as not to intentionally affect the chemical composition of the growth solution) FHS, which may include, for example, forming the system surface from a material that is high purity, corrosion and/or contamination resistant, at least to surfaces that may come into contact with the growth solution, cleaning fluid, and/or cleaning fluid. Likewise, as should become more apparent later, the particular ordering of the various process embodiments and/or the particular ordering of the operations in a particular process embodiment includes another mechanism for achieving this result.
In one embodiment, components of the FHS can generate, transmit, and/or receive electronic and/or pneumatic signals to and/or from other components of the FHS. Likewise, in embodiments, the components of the FHS may operate under common control of a control system, which may, as one example, comprise a processor-type controller, such as a microprocessor. In embodiments, the control system may drive the FHS embodiments via a Central Processing Unit (CPU) and/or processor, where the processing sequence should be monitored and/or controlled as appropriate. Likewise, in embodiments, multiple operations may be monitored and/or controlled simultaneously.
As should be appreciated, various aspects of the complex GPF may be particularly sensitive to particular process parameters (and/or order of execution, e.g., ordering of operations to be substantially performed according to, for example, specified process-related parameters). Thus, for example, programmable monitoring and/or control of embodiments of a process to be performed and/or executed can reduce the frequency and/or extent of operator-generated errors and/or overall process variation, thereby resulting in more consistent and/or higher yield process embodiments, which can thus provide greater industrial utility. As noted, the control system may include at least one processor and at least one memory communicatively coupled, for example, via a communication bus, wherein instructions to be executed, such as computer instructions, should be retrieved from the at least one memory and then executed by the at least one processor. Likewise, in embodiments, a System Interface (SI), which may comprise, for example, a Graphical User Interface (GUI), may be used by an operator to set and/or adjust certain process-related parameters, such as for GPF. Thus, for example, a growth process definition (GPF) may be created and stored in the memory of the control system as an example. In an embodiment, in connection with an embodiment of a closed fluid treatment system configuration, a particular process comprising a particular sequence of process operations, which may comprise particular operations for substantially performing according to user-selected parameters, e.g., under direction of a control system, may provide advantages of reducing contamination, maintaining consistency, and/or maintaining safety (or even improving safety).
In one example of an embodiment, an apparatus may comprise: a wafer substrate holder; and a fluid sealable chamber housing. The cavity within the chamber housing embodiment may be sized to receive and enclose a wafer substrate holder. Chamber housing embodiments may, for example, have a cylindrical-like shape and may be used to heat a zinc oxide growth solution that is also encapsulated. In an embodiment, the wafer substrate holder may relatively securely position the one or more wafer substrates such that the planar surfaces of the one or more wafer substrates are substantially parallel to each other and substantially parallel to the planar end (e.g., the header member). Further, in wafer holder embodiments, posts may extend between end plates of wafer holder embodiments along edges of the end plates. Furthermore, the wafer substrate to be processed may be held relatively securely in place in the wafer substrate holder embodiment via certain types of geometric features of its posts, such as slots, grooves, indentations, and the like, to fit the wafer substrate edge. In order to hold the wafer substrate securely in place, there may be three or more contact points between the perimeter of the wafer substrate and the wafer substrate holder. In certain other embodiments, for example, where it is desired that growth be on one planar surface of the wafer substrate, the wafer substrate may be secured such that the surface on which no growth is being made is in physical direct contact with the flat plate of the wafer substrate holder. As should be described, in embodiments, the wafer substrate holder is further capable of engaging with a drive mechanism to rotate in a chamber housing embodiment, although claimed subject matter is not necessarily limited in scope in this respect.
Continuing, however, the wafer substrate holder embodiment may include structure for positioning in the following manner: such that during rotation of the structure within the cavity of the chamber housing embodiment, the growth solution is able to flow so as to contact the planar surface to be held of the wafer substrate and flow around and between the wafer substrate in a manner consistent with the relatively low temperature aqueous solution growth process definition (GPF) of selected process-related parameters. In embodiments, the wafer substrate holder may be positioned within the chamber housing about an axis of rotation substantially perpendicular to and substantially through the center of the planar surface to be held of the wafer substrate. Furthermore, in embodiments, the wafer substrate holder may be rotated in a manner and at a speed that results in a relatively uniform temperature and/or chemical composition of the growth solution within the chamber housing during growth synthesis and continuous mixing of the growth solution via action due to the rotational movement.
In an example embodiment, the chamber housing may comprise at least one inlet and at least one outlet for respectively connecting embodiments of a Fluid Handling System (FHS). Thus, in embodiments, the growth solution may be received via one or more inlets and may be discharged from the chamber housing via one or more outlets. Furthermore, in embodiments, materials that are resistant to corrosion and/or contamination from exposure to growth solutions may be used to form the chamber housing and wafer substrate holder. In embodiments, the growth solution within the chamber housing may be heated via heat transfer from a thermally conductive shell, such as a shell formed of aluminum, for example, through an inner chamber housing wall formed of a high purity, corrosion resistant and/or contamination resistant material, such as a fluoropolymer, for example. Likewise, in embodiments, the electrical heating element may transfer heat to the thermally conductive shell. Of course, other processes for generating heat of the growth solution and thereby driving the rotation may be equally employed. As an example, but not a heated thermally conductive housing, in alternative embodiments, for example, absorption of radiation forms from a radiation source, such as radio frequency electromagnetic radiation, microwave frequency electromagnetic radiation, infrared electromagnetic radiation, and/or ultrasonic radiation, may be employed to heat the growth solution within the chamber housing.
In example embodiments, the wafer substrate holder may be received within the chamber housing cavity via an end of the chamber housing that may be capable of being opened and closed and may be relatively securely sealed to hold fluid in the chamber housing embodiments. In example embodiments, the wafer substrate holder may be engaged with a drive mechanism (e.g., a drive motor), such as via a drive arm or via a rotor. The features of the arm or rotor, for example, may be configured to mate with features of a wafer substrate holder embodiment. Similarly, the wafer substrate holder may be disengaged from the drive arm or rotor for removal from the chamber housing. This allows loading and unloading of wafer substrates when the wafer substrate holder is disengaged from the drive arm or rotor and removed from the chamber housing, thereby making it easier to access the position of the wafer substrate in the holder. Also, as mentioned, in embodiments, the drive arm may be connected to a mechanical drive motor for rotation during operation of the motor. A schematic cross section of an embodiment 100 of a chamber housing 110 is shown in fig. 1 with a wafer holder 120 within the chamber housing cavity. Figure 2 shows an isometric section of the embodiment of figure 1.
Referring now to fig. 1 and 2, as previously discussed, the embodiment 100 shown includes a wafer substrate holder 120 and a chamber housing 110. As shown, the chamber housing 110 comprises a cylindrical-like container having a generally cylindrical cavity. Embodiments such as 100 may include one or more mechanisms for allowing placement and removal of wafer substrate holder embodiments such as 120 within a chamber housing cavity of chamber housing 110. For example, the chamber housing 110 may be opened and closed via a "door" (e.g., a closure) covering one recycling end of the chamber housing 110. In an example embodiment, a closed door of a chamber housing, such as 110, may be capable of forming a fluid tight seal with other walls of the chamber housing 110 in an example embodiment. Likewise, in an example embodiment, if open, the door allows access and/or insertion and removal of the wafer substrate holder 120.
As shown, the wafer substrate holder 120 in embodiments may be capable of holding a plurality of wafer substrates 180. For example embodiments, the wafer substrates may be positioned with their planar surfaces substantially parallel to each other and substantially normal to an axis 140, which may comprise an axis of rotation for the embodiment, as shown. (although fig. 1 shows the direction of rotation as clockwise, it should be noted that rotation may be counter-clockwise instead) wafer substrate holder 120 may include at least two end plates 160 oriented with their relatively flat surfaces substantially parallel to those of a substrate wafer to be held in the wafer substrate holder. The end plate members 160 in the example embodiment may be connected via a plurality of posts 150 extending between the end plate members 160 along their edges. The wafer substrate holder 120 may contact the loaded wafer substrate at a plurality of points along the edge of the wafer substrate. The wafer substrate may be stationary relative to the wafer holder embodiment even as rotation of wafer holder 120 about axis 140 occurs. In an embodiment, the post 150 includes a slit, slot, groove, or indentation 170 for mating with an edge of a wafer substrate. In an embodiment, as an example, the posts may be positioned at 120 degree or 90 degree angular positions along the circumference of the edge of the wafer substrate in order to hold the wafer substrate in place within the wafer substrate holder 120. Thus, in an example embodiment, the end plate piece 160 and the post 150 may comprise several pieces of material that are connected or fastened together to form the wafer substrate holder 120, such that the wafer substrate holder may be divided into multiple pieces. However, in alternative example embodiments, the wafer substrate holder may be formed from a single piece of material. Thus, in example embodiments, the wafer substrate holder may also include features or mechanisms for alternatively retaining and releasing wafer substrates from the holder for growth and loading/unloading operations, respectively. As an example, referring to fig. 2, pins 155 are shown as part of wafer substrate holder 120. In an embodiment, as shown in fig. 2 in this example, the pins 155 are designed to slide out of holes in the header member 160 to allow insertion and removal of wafer substrates from the holder 120. However, if inserted, the pins 155 retain the wafer substrate in the holder 120, as shown. Thus, for example, the pin 155 does not have indentations, such as 170 (see fig. 1), for allowing it to be removable. Likewise, in a similar embodiment, the wafer substrate holder may also include at least two separable portions that combine in an interlocking manner so as to retain one or more wafer substrates but are separable so as to release the wafer substrates for loading and/or removal thereof.
In embodiments, the chamber housing 110 and the wafer substrate holders 120 may include a mechanism for rotating the wafer substrate holders within the chamber housing. Thus, in embodiments such as this example, the chamber housing may be rigidly connected to the equipment frame or housing. As discussed, the axis of rotation 140 may be substantially normal to the planar surface of a wafer substrate seated within the wafer substrate holder 120. The rotational motion may be mechanically transmitted to the wafer substrate holder 120 from an external drive such as, for example, a motor (not shown) via a drive shaft 190. Thus, for example, where the chamber housing 110 retains a fluid tight seal using a rotary seal between the drive shaft 190 and the chamber housing 110, the rotary motion may be transferred to the wafer substrate holder 120.
The drive shaft 190 may be connected to the wafer substrate holder 120 such that the rotational motion of the drive shaft 190 can be transmitted. The physical connection may allow the wafer substrate holder 120 to be relatively easily disconnected from the drive shaft 190 and removed from the chamber housing 110 as, for example, for unloading and/or reloading wafer substrates, and may then be reconnected to the drive shaft 190 for performing another growth process recipe (GPF) with respect to another set of substrate wafers at a later time. For example, the wafer substrate holder 120 may be connected to the drive shaft 190 via a threaded arrangement. The drive shaft 190 may for example terminate with an external thread and the wafer substrate holder 120 may contain a corresponding internal thread, so that in an embodiment the holder 120 is screwed onto the drive shaft 190 by for example screwing in a direction opposite to the direction of rotation.
In an alternative embodiment, the rotational motion may also be transmitted from an external drive to the wafer substrate holder 120 using a magnetic drive. Indeed, the magnets affixed to the wafer substrate holder embodiments may be coupled to rotating magnets outside of the chamber wall of the chamber housing 110, for example. Furthermore, in alternative embodiments, whether a motor drive, a magnetic drive, or another type of drive is used, the wafer holder may remain stationary while the chamber housing rotates. For example, the chamber housing may contain internal features for creating turbulence of the growth solution during rotation. Likewise, in another embodiment, the chamber housing and wafer holder may remain stationary while the drive mechanism produces growth solution mixing, such as via a rotor, stirrer, or similar component. Thus, for example, in embodiments, a drive mechanism may be employed to engage the chamber housing, wafer substrate holder, and/or another component that may comprise an extension of the chamber housing or wafer substrate holder, so as to produce growth solution mixing while the growth solution may be contained within an enclosure cavity, such as a cavity of the chamber housing.
As mentioned, in embodiments, the crystal may be grown on either or both sides of the wafer substrate, for example. Thus, for example, in an embodiment, growth may occur at a first surface if the first surface exhibits lower energy sites for growth than a second surface, as proposed. As an example, in an embodiment, for example for a wafer substrate used to fabricate a Light Emitting Diode (LED), GaN on a first wafer substrate surface may provide a lower energy surface for ZnO growth than sapphire on a second wafer substrate surface. Alternatively, a seed layer may be used on the surface of the wafer substrate. For example, the seed layer may provide a lower energy surface for growth of ZnO because the seed layer is also ZnO. Likewise, seed layers may also be used on both surfaces of the wafer substrate or seed layers may be patterned in selected areas on one or both surfaces to facilitate growth in embodiments.
It should be noted that in fig. 1 and 2, the chamber housing and wafer holder embodiments, including the wafer substrate, are oriented substantially horizontally, although other orientations are possible. For embodiments, there is a natural tendency in chamber housing embodiments to sink cooler and/or denser growth solutions and to rise hotter and/or less dense growth solutions during operation, which may result in one or more temperature or composition gradients. However, in the example embodiment, as shown in fig. 1 and 2, the axis of rotation is substantially perpendicular to the direction of gravity. Thus, rotation should provide more effective disruption of temperature and/or composition gradients in chamber enclosure embodiments and average possible results of existing gradients for growth across the rotating wafer substrate. However, in a vertical, substantially vertical orientation, the axis of rotation will be parallel to the direction of gravity. In this orientation, rotation of the wafer holder may not be as effective as disrupting the temperature gradient in the vertical direction and may also not be carried out to average out possible results for growth. However, also at relatively high rotational speeds at which the growth solution can be mixed reasonably well, non-horizontal orientations may also provide sufficient performance. Similarly, in embodiments, as shown in fig. 1 and 2, orienting the wafer substrate substantially vertically may aid in growth quality and/or property uniformity in that particles and/or bubbles that may adversely affect growth may be less likely to adhere to the wafer substrate surface. Again, however, the relatively high rotational speed may be such that a substantially non-vertically oriented wafer substrate may provide adequate results.
To provide relatively high purity, corrosion and/or contamination resistance, the portion of the chamber housing 110 that is used to contact the growth solution and the wafer substrate holder 120 may be formed of materials that are more difficult to corrode and/or contaminate with the various fluids to which they may be exposed. For example, such portions may be comprised of: fluoropolymer materials such as Polytetrafluoroethylene (PTFE), perfluoroalkoxy Polymer (PFA), polyethylene tetrafluoroethylene (ETFE), polychlorotrifluoroethylene (PCTFE or CTFE), fluorinated ethylene-propylene (FEP), polyvinylidene fluoride (PVDF), and the like; and/or other materials having a relatively high chemical resistance such as Polyetheretherketone (PEEK), Polyethylene (PE), polypropylene (PP), sapphire, quartz/fused silica, stainless steel, or combinations thereof. For certain parts, elastomeric material properties may also be desired, such as for example, parts that form and/or provide a seal, like o-rings, gaskets, and the like. These moieties may be or may similarly include fluoroelastomers such as fluorocarbon elastomers (FKM), perfluorinated elastomers (FFKM), fluorosilicone rubbers, and the like, or combinations thereof. In addition to the potential failure of a part, corrosion of materials and/or dissolution into fluids during operation, such as synthesis of materials, may result in contamination, other modification of the growing material, and/or other undesirable effects.
Of course, claimed subject matter is not intended to be limited in scope to the example embodiments presented primarily for purposes of illustration. Thus, the previously described embodiments, such as the embodiment shown in fig. 1 and 2, include embodiments of wafer substrate holders in which separate, separate wafer substrates positioned at different locations along a rotational axis, such as axis 140, are in place. However, as an example, in alternative embodiments, in a single common plane positioned at a particular different location along the axis of rotation and positioned with the axis of rotation at the center may be an array of multiple wafer substrates that are substantially located in the same (e.g., common) plane. Likewise, substantially similar arrangements may be contained in substantially parallel planes spaced apart along the axis of rotation. For example, advantages of this embodiment may include the ability to accommodate wafer substrates of different sizes and/or shapes and/or the ability to accommodate a larger number of smaller wafers per planar arrangement in a chamber housing embodiment that is also capable of accommodating larger wafers in a single wafer. However, possible disadvantages may include reduced efficiency in terms of wafer surface area to chamber volume ratio and possibly less uniformity in temperature and/or chemical composition than in previous embodiments; however, it may still provide adequate results.
An embodiment of a Fluid Handling System (FHS) for a relatively low temperature aqueous solution zinc oxide growth system (ZGS) is shown in fig. 3. In an embodiment, the FHS can include an interconnection network having fluid lines, fluid valves, one or more process parameter sensors, one or more pressure vessels, one or more fluid pumps, one or more fluid sources, and/or one or more fluid drains forming a programmable closed Fluid Handling System (FHS). In an embodiment, the interconnection network may be connected to a fluidly sealable growth chamber enclosure, such as the chamber enclosure 110, such as by being connected to at least one inlet, such as inlet 310, and to at least one outlet, such as outlet 320 (although, as discussed later, outlet 320 includes two vents). In an embodiment, the one or more process parameter sensors may comprise at least one of: a fluid flow sensor, a fluid pressure sensor, a fluid temperature sensor, an optical sensor, a fluid pH sensor, a fluid conductivity (or resistivity) sensor, or any combination thereof. In an embodiment, a programmable closed Fluid Handling System (FHS) may be capable of being programmed in advance, such as via a control system. In an embodiment, the control system capable of being programmed in advance may comprise at least: a processor and a non-transitory memory interconnected via a communication bus, the non-transitory memory for storing executable instructions, such as computer instructions, for retrieval and execution by the processor. Likewise, in an embodiment, the control system may be used, at least in part, to store instructions, such as computer instructions, to perform, for example, specific zinc oxide Growth Process Formulation (GPF). In an embodiment, a particular zinc oxide GPF can specify zinc oxide synthesis process-related parameters for performing the particular zinc oxide GPF. For example, a particular zinc oxide GPF can specify one or more pathways for fluid to flow in an FHS embodiment under particular conditions present during execution of the particular zinc oxide GPF, which can be accessed, for example, via sensors and/or signals. Likewise, a particular zinc oxide GPF can specify one or more fluid flow paths in an FHS embodiment at a particular time during execution of the particular zinc oxide GPF. The designated fluid flow paths may include paths for flowing fluid from one or more fluid sources and/or paths for flowing fluid to one or more fluid drains. Likewise, a particular zinc oxide GPF may specify that the zinc oxide synthesis process-related parameters include a specification of a temperature signature and/or a pressure signature of the growth solution when in the chamber housing 110 for the particular zinc oxide GPF. The term "flag" refers to a characteristic of a particular quantity, such that it describes how the quantity may vary over a period of time. Likewise, a particular zinc oxide GPF can specify a spin speed index, which can include at least the chamber spin speed for the time period of the growth solution when contained within the chamber housing 110. Further, embodiments that include an interconnection network forming a programmable closed FHS can include paths for fluid flow from one or more fluid sources to the inlet 310 of the chamber housing 110 and/or paths for fluid flow from the outlet 320 of the chamber housing 110 to a fluid exhaust and/or portions of embodiments that bypass the interconnection network, such as one or more paths having more limited fluid flow, which can be for various reasons, such as integrated flow controllers are along the paths.
Referring to fig. 3, for example, an embodiment of an FHS can include at least one growth chamber housing, e.g., 110, with at least two portions that allow fluid entry and exit, e.g., an inlet 310 and an outlet 320, respectively. It should be noted that in fig. 3, outlet 320 includes two vents, a top vent connected to fluid line 366 and a bottom vent connected to fluid line 364. Likewise, in an embodiment, the FHS includes at least one of the following connected to the chamber housing 110 by fluid lines: a growth solution source 330, a cleaning fluid source 340, and/or a purge gas source 350. Embodiments may also optionally include a source of cleaning fluid 360. Embodiments may further include at least one fluid line 365 for connecting to a connection container or waste drain. The growth fluid source 330 provides a fluid that, when heated, for example, alone or in combination with other fluids, in the chamber housing 110, causes the material to synthesize, e.g., grow ZnO, on the surface of the wafer substrate.
In an embodiment, for example, the fluid from growth solution source 330 may include an aqueous solution with dissolved ammonia and zn (ii) species that upon heating results in the synthesis of ZnO in crystalline form, as described, for example, previously. Likewise, in embodiments, the purge gas source 350 can include a pressurized supply of gas that can flow for purging fluid from the components of the FHS embodiments. For example, to reduce the risk of adverse interactions, such as with other fluids and/or with the wafer substrate, gases that are substantially non-reactive with such fluids and/or wafer substrate under conditions present in embodiments of the FHS can be employed. Thus, for example, the purge gas may comprise, for example, clean and dry nitrogen and/or air. The rinse fluid source 340 in an embodiment can provide fluid for rinsing and/or diluting other fluids in embodiments of the FHS. The cleaning fluid may comprise, for example, Deionized (DI) water.
Embodiments of the FHS should also include a mechanism for moving fluid along a path from one location to another. For example, FHS embodiments can include fluid lines that can generate pressure differentials between different locations along a path in the FHS embodiments to cause fluid to flow through those locations of the path. Thus, for example, in embodiments, the growth solution source, the cleaning fluid source, the rinse fluid source, and/or the purge gas source may be pressurized relative to the chamber housing and relative to other downstream collection vessels and/or exhaust lines. For example, the source may be pressurized above atmospheric pressure; likewise, the chamber housing, downstream collection vessel, and/or vent line may be pressurized to atmospheric pressure.
However, this is not the case for the embodiment described in fig. 3. In this example, the growth solution source 330 and the cleaning fluid source 360 need not be pressurized relative to the chamber housing 110. As described in more detail later, the growth solution is pumped through 334 into a pressure vessel 399, which is then pressurized through 350, so there is a pressure differential between the vessel 399 and the chamber housing 110. Likewise, the cleaning solution 360 is pumped directly to the chamber housing 110 through 333. Thus, both 360 and 110 may be at substantially the same pressure, as in this embodiment, atmospheric pressure.
However, a pressure regulating valve may be used to at least partially influence the pressure in the FHS embodiment. Similarly, a pressure gauge and/or transducer may be used to monitor the pressure. The pressure regulating valve may, for example, comprise an electrically adjustable pressure regulating valve capable of at least substantially setting the pressure in accordance with a control signal, such as an electronic control signal. The pressure gauge and/or transducer may also include electronics capable of generating a control signal indicative of the measured pressure. Further, electronic pressure regulation and sensing may be integrated into a single device with an internal control loop or may be connected using an external control loop. Fluid pressurization may also be provided outside of embodiments of the FHS. For example, the purge fluid source 340 may comprise an external supply of pressurized purge fluid, or the purge gas source 350 may comprise a pressurized supply of gas. For example, fluid pressurization may also be provided and/or generated within an FHS embodiment, such as via a booster pump and/or compressor. For example, fluid pressurization may also be provided and/or generated internally via the transmission of pressure from another external or internal pressurized fluid. Referring to fig. 3, for example, the growth solution, if contained in the pressure vessel 399, may be pressurized by nitrogen from a purge gas source 350, the pressure being regulated by an electropneumatic pressure regulator 325, as described in more detail later. It should be noted that the pressure may be adjusted and/or monitored in various ways and that claimed subject matter is not intended to be limited in scope to a particular process.
Various types of pumps, such as positive displacement pumps and/or speed pumps, can also be used to drive fluid flow between different positions along the path in an FHS embodiment without necessarily creating a pressure differential between those different positions. Thus, as an example, a positive displacement pump may be used to move fluid along a path from a fluid source to a chamber housing, such as 110, where both the fluid and the chamber housing are at substantially the same pressure, such as, for example, atmospheric pressure. As a non-limiting example, a diaphragm pump may be employed, such as the KNF model UNF-300 pump available from Keynfu, N.berg., located in Two Black Forest Road Two (Two Black Forest Road, Trenton, N.J.), N.J..
In an embodiment, the FHS may include fluid lines, fluid connections, and fluid valve configurations, e.g., to select fluids from one or more sources, such as, for example, the sources listed above, where one or more selected fluids may be admitted into the chamber housing, e.g., 110. For example, embodiments may include a 3-way valve such as 305 to select flow from the growth solution source 330 or from the second fluid line through to the chamber housing 110. That second fluid line, in turn, may be connected to, for example, a common portion of another 3-way valve 306 that selects between the flow from the purge fluid source 340 and the purge gas source 350. Downstream from the common portion of 305 is a third 3-way valve 307 that selects between a selected fluid flow rate of the 3-way valve 305 and the source 360 of the cleaning fluid. In the configuration as described above, etc., the fluid line shared by the plurality of fluids may be cleaned with the cleaning fluid and cleaned with the cleaning gas. By way of non-limiting example, the 3-way valve may comprise, for example, an Entegris model plus tex (Galtek) SG4-3C pneumatically operated valve obtained from Entegris, inc, 129Concord Road, Billerica, MA, and the harmony 129 integer corporation, massachusetts.
Similarly, in embodiments, the FHS can direct the flow of fluid exiting the chamber housing 110 along a path to one or more possible collection containers and/or a drain. For example, fluid exiting the chamber housing 110 may be directed to a cleaning fluid drain such as 390, a growth solution drain such as 395, or a collection vessel, and/or a cleaning fluid drain such as 380, or a collection vessel. As previously mentioned, embodiments may also include multiple vents from the chamber housing 110 for the outlet 320. For example, the fluid line 364 may be connected near the lowest point of the chamber housing 110 so that all or substantially all of the liquid may flow out during draining, and the second fluid line 366 may be connected at the highest point of the chamber housing 110 so that all or substantially all of the gas may escape as the chamber housing 110 is filled with liquid. Continuing with an example, embodiments may incorporate fluidic valves, such as 309 and 310 shown in fig. 3 for lines 364 and 366, respectively, that may allow or prevent fluid from passing through either and/or both of the fluidic lines and connect downstream to form fluidic line 365. The valves 309 and 310 may comprise, for example, 2-way pneumatically operated valves, such as the Entegris model Galtek SG4-2C or SG4-2U valves, again available from Entegris corporation, for normally closed or normally open versions, respectively.
The FHS embodiment can also include a flow meter and a variable flow control valve for measuring and controlling the fluid flow in the fluid line, respectively. The flow meter may, for example, comprise an electronic flow meter capable of generating a control signal indicative of the magnitude of the flow. The variable flow valve may be electrically controlled, being able to set the flow at least approximately according to a control signal. The flow meter and variable flow control valve may be integrated with an internal control loop as a flow controller shown as 375 in fig. 3, such as, for example, the Entegris InVue integrated flow controller model No. NT6510 available from Entegris corporation.
In embodiments, the FHS with fluid lines, fluid connections, and fluid valves can also include fluid lines, fluid connections, and fluid valves for allowing, for example, the bypass of variable flow valves, integrated flow controllers, and/or other flow restriction components in appropriate situations where an increase in flow is desired. For example, if an integrated flow controller is located on a fluid line between growth solution source 330 and chamber housing 110 to effectively restrict flow to chamber housing 110, a bypass fluid line such as 355 may be used to route fluid around the integrated flow controller such as 375 to allow for higher flow rates. This may be useful, for example, if the chamber housing is filled with growth solution, i.e., where it may be desirable to reduce the fill time and the use of a particular flow rate may not be an issue.
FHS embodiments can also include in-line filtration for removing particulates from one or more fluids. For example, an in-line filter 345 may be placed along the fluid line between growth solution source 330 and chamber housing 110 to remove particles from the growth solution before it enters chamber housing 110, which may, for example, otherwise contaminate or undesirably disrupt the synthesis. As one example, the particles in the growth solution may serve as sites for heterogeneous nucleation and/or growth that may compete with nucleation and/or growth of material on the wafer substrate. As a result, material quality, desired properties, and/or growth rate may be impaired. Similarly, filters may be placed between the chamber housing 110 and the cleaning fluid source 360, the purge fluid source 350, and/or the purge gas source 340.
Similar to the chamber housing 110, as previously discussed, in order to provide relatively high purity, corrosion resistance, and/or contamination resistance, portions of embodiments of the FHS (e.g., for possible contact with the growth solution) and the wafer substrate holder 120 may be formed of materials that can resist corrosion and/or contamination by the various fluids to which they may be exposed. For example, such portions may be comprised of: fluoropolymer materials such as Polytetrafluoroethylene (PTFE), perfluoroalkoxy Polymer (PFA), polyethylene tetrafluoroethylene (ETFE), polychlorotrifluoroethylene (PCTFE or CTFE), fluorinated ethylene-propylene (FEP), polyvinylidene fluoride (PVDF), and the like; and/or other materials having a relatively high chemical resistance, such as Polyetheretherketone (PEEK), Polyethylene (PE), polypropylene (PP), sapphire, quartz/fused silica, stainless steel, or combinations thereof. For certain parts, elastomeric material properties may also be desired, such as for example, parts that form and/or provide a seal, like o-rings, gaskets, and the like. These portions may similarly include fluoroelastomers such as fluorocarbon elastomers (FKM), perfluorinated elastomers (FFKM), fluorosilicone rubbers and the like or combinations thereof. In addition to the potential failure of a part, corrosion and/or dissolution of a material into a fluid during operations such as during material synthesis may result in contamination, other modification of the growing material, and/or other undesirable effects.
As previously discussed, in the formulation of a particular zinc oxide growth process, a particular growth solution having a particular chemical composition may be employed. Thus, during synthesis, it may be desirable not to inadvertently alter the selected chemical composition. For example, changes in chemical composition, such as those that at least partially affect the pH, concentration and/or availability of the zinc complexing ligand, may at least partially change the solubility difference as for example changed for a given temperature and may thus for example alter the ZnO crystal growth rate in the case of ZnO synthesis, possibly altering the resulting ZnO properties depending on the particular properties being sought. In embodiments, one way to achieve this result may be through the use of an embodiment of a "closed" FHS, as explained previously. The term "closed" refers to the lack of additional material introduced into or removed from a process recipe, other than through programmed control and/or intentional manual intervention. This may be contrasted with other fluid treatment systems, such as open baths, where substances may be treated and contact with additional substances that may not be explicitly included in the process or loss of volatile components such as water or ammonia vapor from the fluid treatment system may occur, as examples.
Likewise, in embodiments, another way to reduce the risk of inadvertently having such changes may be through process sequencing using embodiments of the closed FHS, as described in more detail below. The term "process sequencing," such as a process sequencing with respect to process operations, refers to a planned sequence of processes, operations in an embodiment, such as a process embodiment, a series of process embodiments, and/or one or more sequences of process operations, so as to take care not to inadvertently introduce unplanned materials and/or otherwise produce unplanned chemical and/or physical effects, such as through process interactions that may otherwise occur without careful planning and/or attention. To facilitate process sequencing, for example, embodiments may provide various alarm indicators and/or other types of indications to an operator regarding: regarding the status of the FHS and/or its components, regarding the presence of dangerous situations of operating the ZGS and/or regarding the progress of a specific process, the progress of a sequence of process operations and/or the progress of the operations. For example, an indicator light may signal that a corrosive fluid, such as an acid, may be present and/or flowing. Likewise, the indicator light may signal that a potentially hazardous growth solution at a relatively high temperature and/or pressure may be present and/or flowing. Likewise, the status, status and/or progress of a particular process, the progress of a sequence of operations of a particular process and/or the progress of a particular operation may also be provided via a System Interface (SI), such as, for example, via a Graphical User Interface (GUI). Thus, proper process sequencing may protect the grown zinc oxide or other components of the wafer substrate from damage and/or contamination that may occur due to unwanted exposure and/or interactions, and protect the components of the fluid handling system and human operators interacting with the fluid handling system from potentially unsafe or harmful conditions.
Thus, fig. 4 is a flow diagram of an embodiment 400 of an example process including a sequence of process operations to be performed including process operations for Growth Process Formulation (GPF), cleaning process formulation (RPF), gas cleaning process formulation (PPF), and Cleaning Process Formulation (CPF). Likewise, fig. 5-13 are additional flow diagrams showing more details of a sequence of process operations to be performed, as shown in fig. 4.
For process embodiments, one or more sequences of process operations may involve performing pre-growth process operations of a Fluid Handling System (FHS) embodiment of a relatively low temperature aqueous solution zinc oxide growth system (ZGS) embodiment for preparing the ZGS embodiment for performing a particular zinc oxide GPF. The sequence may, for example, comprise performing a process operation for verifying a sufficient fluid seal of the fluid sealable chamber enclosure. Likewise, the sequence may include performing process operations for filling an unpressurized empty container or partially empty container with zinc oxide growth solution and then pressurizing the container containing the zinc oxide growth solution after filling. Likewise, the sequence may include performing process operations for transferring the zinc oxide growth solution from the pressurized container to the chamber enclosure for zinc oxide growth/synthesis.
Similarly, in an embodiment, the sequence of process operations may involve performing a zinc oxide GPF and may involve performing a post-growth process operation in a Fluid Handling System (FHS) embodiment of a relatively low temperature aqueous solution zinc oxide growth system (ZGS) embodiment such that the FHS embodiment is placed in a state for starting a pre-growth process operation of another growth cycle, such as another GPF cycle. The sequence may include performing chamber housing operations for implementing a particular zinc oxide GPF for a fluidly sealed chamber housing containing a zinc oxide growth solution. Likewise, the sequence may include performing process operations for discharging the chamber enclosure with the zinc oxide growth solution after completing the chamber enclosure operations for a particular zinc oxide GPF.
The sequence may further comprise performing a post-growth process operation for placing the FHS embodiment in a state to begin a pre-growth process operation for another zinc oxide growth cycle, such as another GPF cycle. The sequence may include performing post-growth process operations, such as: operation of the embodiment for gas cleaning FHS; operations for cleaning embodiments of FHS, including a chamber housing; and/or operations for cleaning the chamber housing. For example, sensors in the FHS, such as a fluid pH sensor and/or a fluid conductivity (or resistivity) sensor, can help to assess by measurement whether sufficient cleaning of a portion of the FHS, e.g., the chamber housing and/or the wafer substrate holder, has occurred prior to performing another sequence of process operations.
For example, in an embodiment, the process sequence may include performing one or more of the following:
such as filling and/or venting the chamber housing with various fluids;
temperature and/or pressure regulation while contained in the chamber housing;
rotating a wafer substrate holder in a chamber housing that also contains one or more fluids, such as growth solutions;
performing a plurality of programmed (e.g., pre-programmed) process operations, such as in connection with various growth process recipes (GPFs); and
cleaning and/or rinsing chamber housings and/or other components of fluid processing systems.
Process embodiments, including, for example, process operation sequence embodiments, may be initiated and monitored, and certain process-related parameters to be used, such as user-selectable process-related parameters, which may be set via a System Interface (SI), which may include, for example, a Graphical User Interface (GUI), may be set in advance. In an example embodiment, the system interface may include, for example, a touch-sensitive display. With SI, a user may use process-related parameter settings, e.g., certain process conditions, by creating, as examples, process recipes for growth (e.g., GPF) and/or cleaning (e.g., CPF), which may be stored for later reuse, e.g., in a memory of a control system. As described in more detail below, in embodiments, for example, a control system may include at least one processor and at least one memory connected and communicating via at least one communication bus. The process recipe can include, for example, a sequence of process operations in which, for example, one or more modifiable set points are used for the process operations. Modifiable set points may include, for example, a stability controller set point, a pressure controller set point, a wafer holder rotational speed set point, a flow controller set point, and/or a time increment set point. Material growth on a substrate wafer may be relatively sensitive to one or more process-defined set points, such that, for example, accurate and precise mass output product repeatability is desired. Additionally, the process related parameters may implement proportional, integral, and derivative (PID) gains as used for temperature adjustment as one example, for example, using a proportional-integral-derivative control loop. After generation, in embodiments, for example, process recipes, such as growth process recipes, may be stored and initiated via a system interface.
Referring now to, for example, fig. 4 and embodiment 400, an operator may load a substrate wafer into a substrate holder, such as 120, as previously described, which may then be loaded into a chamber housing, such as 110. The chamber housing may be coupled to an embodiment of a FHS, such as embodiment 300 shown in FIG. 3, for example. Likewise, a control system, such as a processor connected to a memory having suitably stored instructions, such as computer instructions, retrieved and executed by the processor, may be loaded with operator generated process recipes, such as, for example, GPF and/or CPF, and recipes for cleaning and/or via gas purging, as described above.
Likewise, after the process is started, a sequence of initial process-related tasks, including safety check tasks, may be performed. Thus, block 405 refers to leak checking of a chamber housing, such as 110. Block 405 is shown in more detail in fig. 5, where fig. 5 illustrates an embodiment 500 for leak checking. For example, embodiments may perform checks to ensure that the chamber housing, e.g., 110, is tightly sealed and fill and pressurize a fluid reservoir pressure vessel, e.g., 399 of fig. 3. For example, an inspection to ensure that the chamber enclosure is tightly sealed may include pressurizing the chamber enclosure with a purge gas and monitoring the pressure to confirm that the pressure is stable and does not continue to drop, indicating that the chamber is sealed.
Referring to the embodiment shown in FIG. 3, for example, this would require actuating the 3- way valves 305, 306, and 307 to open from N2Regulator 315, such as a path to valve 308, opens valve 308, and closes valves 309 and 310, which correspond to blocks 510 and 520 of fig. 5. Pressure is measured using a pressure transducer "PT" on the "bottom vent" line between the chamber housing 110 and the valve 309. If the pressure exceeds a set pounds per square inch (psi), e.g., 5 psi, the valve 308 closes, corresponding to block 540 of FIG. 5. The pressure is monitored to evaluate against failure criteria such as, for example, pressure decay and/or failure rate to remain stable for a set resolution and time period, see blocks 550 and 560 of fig. 5. If the criteria or tests fail, the embodiment may terminate the particular process sequence and/or repeat until passing, referring to blocks 570, 580, and 590 of FIG. 5. Checking that the chamber housing 110 is able to maintain pressure before being filled with fluid reduces the risk of leaking potentially dangerous fluids such as, for example, heated growth solutions or cleaning fluids.
In embodiments, the fluid reservoir pressure vessel may be filled, for example, by pumping a growth solution-only or external fluid reservoir into the unpressurized pressure vessel. The disconnection may be affected by signaling and/or sensors. For example, a sensor may be employed to detect liquid in a sight tube connected to the pressure vessel 399 by being positioned at an appropriate level of discontinuity. The sensor may comprise, for example, an optical sensor for detecting the presence of liquid in the tube via a refractive effect of light along the optical path through the transparent tube. For example, the sensor may generate a signal due to the presence of liquid, and via the control system, the pump may stop operation in embodiments as previously described, e.g., due to the signal generated by the sensor. As an example, an Ohlong (OMRON) model EE-SPX613 sensor is available from the Ohlong group (Omron Corporation), an electronic company headquartered in Kyoto, Japan. Because this type of sensor is placed outside the fluid line, it does not contaminate the fluid or otherwise interfere with the fluid flow, providing another advantage.
Fig. 6 illustrates a flow diagram of an embodiment also corresponding to block 406 of fig. 4. In an embodiment, filling the pressure vessel may include opening a manual valve such as 332 between growth solution source 330 (shown as "Growth Solution (GS) in") and "growth solution pump" pump 334, opening valve 302 and closing valves 301, 303, and 304. The "GS pump" 334 is then activated, pumping the growth solution into the pressure vessel 339. Air or gas in the pressure vessel 339 may escape through the valve 302 and check valve 342, leading to a drain line 344. This process operation corresponds to blocks 610 and 620 shown in fig. 6. The sensors for the sight tubes labeled "lamp 2(LT 2)" to "LT 6" may track the progress of filling the pressure vessel 399. Thus, for an embodiment, the control system may disconnect the pump 334 based at least in part on a signal generated from a sensor indicative of fluid level, corresponding to blocks 630 and 640 of fig. 6. In embodiments, the cut-off level may be set, for example, to fill pressure vessel 399 with sufficient growth solution for the growth process to be set, or pressure vessel 399 may be maintained, for example, at an "exceeded" level.
After filling, the pressure vessel 399 may be pressurized to the appropriate pressure using an electro-pneumatic regulator, such as 325 in FIG. 3. For example, the regulator 325 may be isolated by first closing a downstream valve via a signal generated from the control system, corresponding to block 710 of fig. 7. The regulator 325 receives a pressure set point, typically via an electronic signal, corresponding to block 720. The regulator valve of 325 may be adjusted until the regulator pressure buffer measurement corresponds to the particular set point pressure indicated by block 730 of fig. 7. The valve separating the regulator 325 and the pressure vessel 399 may then be opened, with the regulator 325 and the pressure vessel 399 being separated from the rest of the FHS embodiment of FIG. 3 by an additional closing valve, corresponding to block 740. The measurement of the second pressure transducer may then be used to determine whether to pressurize the pressure vessel 399. For example, a pressure transducer may be incorporated into the integrated liquid flow controller 375 downstream of the regulator 325. If the second pressure transducer signals that the pressure vessel 399 is at a pressure set point, then the pressure vessel 399 has been successfully pressurized, corresponding to block 750. For example, in the FHS embodiment of fig. 3, the "electropneumatic pressure regulator" 325 may be isolated by closing the valve 301. Valves 302, 303, and 308 may be closed, valve 304 may be actuated to create a path from pressure vessel 399 to "Integrated Flow Controller (IFC)" 375, and valves 305 and 307 may be actuated to provide a path from IFC 375 to valve 308. After the regulator 325 has stabilized to the pressure set point, the valve 301 may be opened to pressurize the pressure vessel 399. The pressure at the pressure transducer integrated into "IFC" integrated flow controller 375 may be monitored via the control system until the pressure corresponds. Of course, it should be noted that alternatively, a separate pressure transducer may be employed in embodiments other than IFC 375.
In an embodiment, an appropriate signal may be generated to actuate a valve, such as, for example, the valve shown in the embodiment of fig. 3, to open a fluid flow path from the pressure vessel 399 to the chamber housing 110, also as shown in block 810 of fig. 8. The valve connected to the drain line near the lowest point of the chamber housing 110 (e.g., 309 on line 364) may be closed and the valve connected to the drain line near the highest point of the chamber housing 110 (e.g., 310 on line 366) may be opened, allowing gas to escape when the chamber housing 110 is filled with growth solution, as shown in blocks 820 and 830. The chamber housing 110 may continue to fill with liquid until a sensor placed on the outlet fluid line generates a signal indicating that liquid has begun to flow, as shown in block 840. For example, again, the optical sensor may detect the liquid in the tube via a refraction effect of light along the optical path through the transparent tube. As previously mentioned, an OMRON model EE-SPX613 sensor may be employed and is available from Ohio, Inc., Ohio, headquarters located in Kyoto, Japan. Because this type of sensor is placed outside the fluid line, it does not contaminate the fluid or otherwise interfere with the fluid flow, thereby providing another advantage, as previously mentioned. In an embodiment, the fluid flow path between the pressure vessel 399 and the chamber housing may be closed as indicated by block 850 due to the signal generated from the detection liquid as described above.
For example, referring to the embodiment of fig. 3, the fluid flow path from the pressure vessel 399 to the chamber housing 110 may be the result of the following, again indicated by block 810: valves 301, 309, and 310 are open, valves 302 and 303 are closed, valve 304 is actuated to divert flow around IFC 375, valves 305 and 307 are actuated to create a path from valve 304 to valve 308, and valves 311 and 312 are actuated to provide a path from valve 130 to 395 for growth solution collection. Valve 308 is then opened to allow fluid flow, as indicated by block 820. The valve 309 may initially be open to allow air to purge from the chamber housing 110, but may be closed after a predetermined time or alternatively as a result of liquid being detected by the sensor 322, as shown in block 830. In an embodiment, the chamber housing 110 may continue to be filled with liquid. However, after the chamber housing 110 is filled to a "top drain" level corresponding to 320, liquid may flow into the fluid line to the valve 310, the sensor 322, and to the valve 311. In an embodiment, the flow may stop due to the sensor 322 detecting liquid, which may signal that the chamber housing 110 is full.
In the case where the chamber housing 110 is filled with growth solution, corresponding to block 409 of fig. 4 and fig. 9, a particular GPF may be implemented that may contain user-selected process-related parameters set with the user via SI in an embodiment. This may include: ramping or maintaining the temperature of the growth solution in the chamber housing 110 as a function of time or another variable, rotating the wafer substrate holder 120 at a rate as a function of time and/or variable, and flowing the solution through the chamber housing 110 at a rate as a function of time and/or other variable. Controlling flow through the chamber housing 110 may be accomplished via an integrated flow controller such as 375 of fig. 3 discussed in more detail later. Performing particular GPFs and/or setting particular GPF conditions for a relatively low temperature aqueous synthesis process in an accurate, predictable, and/or repeatable manner may impact the ability to obtain desired properties for material growth. See, for example, U.S. patent Application 14/341,700 entitled "Fabrication and/or Application of Zinc Oxide Crystals with Internal (inter-Crystalline) Porosity" filed by Richardson et al, 25/7/2014.
The operations for the GPF may also include, for example, non-user-selected process-related parameters, such that the control system may be capable of reproducibly performing a desired process embodiment, for example. As just one example, the flow rate of growth solution through the chamber housing 110 may be determined and employed by GPF embodiments in order to make process sequencing decisions. As another example of an entirely different type, a formulation such as a Growth Process Formulation (GPF) may contain parameters of a proportional-integral-derivative controller (PID controller) for achieving stable and/or reproducible temperature adjustment. In embodiments such as those used for FHS, as shown in FIG. 3, a GPF using growth solution flow, for example, would use most of the same valve configuration previously described in conjunction with FIG. 8, except that valve 304 would be switched to flow through the fluid path of IFC 375. For example, the IFC 375 may receive a signal via a flow set point, such as from a control system, and adjust it to be flow-controlled until a corresponding flow is measured by a flow sensor. Flow may be continuously maintained by IFC 375 using a feedback loop in embodiments. The feedback loop may also be used in embodiments for temperature adjustment of the chamber housing 110 in embodiments. In an embodiment, two thermocouple type temperature sensors for measuring the temperature of the fluid within the chamber housing 110 as shown in fig. 3 and two thermocouples for measuring the aluminum shell surrounding the PTFE wall of the chamber housing 110 as shown in fig. 2 may be used to generate heat to affect the temperature. The use of multiple thermocouples to measure two different locations in the fluid within the chamber housing 110 and two locations on or in the heated aluminum shell provides for metering of temperature uniformity in the fluid and across the shell and/or continuous verification of proper thermocouple operation. For an embodiment, the temperature may be adjusted using a "cascade" type approach with two feedback loops, a master loop and a slave loop. As an example, the main loop may compare the measured liquid temperature to a liquid temperature set point and use the difference to generate a PID output signal. The master loop PID output signal can be used to determine a heated aluminum case set point by the slave loop for comparison to the measured aluminum case temperature. The difference between the measured temperature of the aluminum enclosure and the set point temperature may be used to determine a slave loop PID output, which may be, for example, the power supplied to an electric heater that provides heat to the aluminum enclosure. The liquid within the chamber housing may heat and cool relatively slowly, so the master loop may typically use a slower cycle time than the slave loop. Thus, if the liquid is too cold, more heat is generated, and if the liquid is too hot, less heat is generated. If a motor with a rotational speed sensor (e.g., an encoder) is used, a feedback loop may also be used by the motor controller to maintain a desired wafer substrate holder rotational speed. As previously noted, the feedback loop may also be used by a fluid flow controller. It should also be noted that similar methods may be employed in embodiments where the pressure within the chamber housing is regulated and a particular GPF is implemented.
After the growth process set-up operation, in an embodiment, the chamber housing 110 may be vented by opening a fluid path to a collection receptacle or vent, such as 395, as shown in figure 3. To accelerate venting, a flow of compressed gas (e.g., from 355) to the chamber housing 110 may be opened. The compressed gas entering the chamber housing 110 may push the growth solution out. A sensor on the fluid path to the collection container/drain, such as the OMRON model EE-SPX613 sensor described previously, can sense and signal that liquid is no longer present, indicating that the chamber housing 110 has been completely drained, corresponding to 1030 and 1040 of fig. 10. As previously suggested, using a purge gas to purge a path followed by flowing different fluids may reduce the risk of undesired reactions in the fluid lines between the different fluids, such as, for example, between a growth solution and a purge fluid. Certain mixtures of water and growth solution may, for example, result in precipitation of solid materials such as ZnO, which may be undesirable. Referring to the embodiment of fig. 3, after the final growth process formulation operation for a particular GPF cycle, valve 308 may be closed to stop the solution flow, heater power may be turned off, and wafer substrate holder rotation may be stopped. Valves 305, 306, and 307 may then be actuated to provide flow from pressure regulator 315 to valve 308A path. Valves 309 and 310 may be open, and valves 311 and 312 may be set to allow flow for collection. Valve 308 may be opened, allowing pressurized N2The growth solution is pushed out of the chamber housing 110. Initially, liquid may flow out of both the "top drain" and the "bottom drain," but the drain may be slow if the top drain is open, allowing purge gas collected at the top of the chamber housing 110 to also flow out. Thus, after a predetermined time or if a bubble is detected in the fluid line via sensor 322, valve 310 may be closed. After the liquid has been drained from the chamber housing, the sensor 322 may consistently detect "no fluid" and may generate an appropriate signal. At this point, the chamber housing 110 is exhausted.
After draining the growth solution, the chamber housing 110 and a portion of the FHS embodiment, such as a portion of embodiment 300, may be cleaned, for example, with a cleaning fluid, to remove residual growth solution. As previously mentioned, sensors such as fluid sensors and/or fluid conductivity (or resistivity) sensors may facilitate process sequencing, which may improve quality and/or safety, among other benefits. For example, the operator may be alerted to allow the FHS to remain closed, such as via an indicator light, SI, and/or another mechanism, until sufficient cleaning and/or removal of the hazardous substance has occurred or completed. A fill process sequence similar to the process sequence used to provide the growth solution may be used. Thus, as shown in fig. 11, the valve configuration here may open a fluid flow path from the cleaning fluid source 340 to the chamber housing 110. Likewise, as shown in fig. 12, the wafer substrate holder 120 may be rotated for a set incremental amount of time to help clean the wafer substrate, the chamber housing 110, and the wafer substrate holder 120. The wash fluid may be discharged in a similar manner to the growth solution process sequence, but the fluid flow path is directed to a wash fluid collection vessel or drain 390. This process sequence may be repeated a set number of times or until the sensor signal indicates adequate cleaning and/or cooling (e.g., temperature, fluid pH, and/or fluid conductivity sensors). As shown, the residual substances may have a negative impact on the properties of the grown material as well as on the safety of the operator, making adequate and/or repeatable cleaning desirable.
In the embodiment shown in fig. 3, for example, valves 305, 306, and 307 provide a path from the pressure regulator 385 and the cleaning fluid source 340 to valve 308. Likewise, valves 311 and 312 may be provided to provide a fluid flow path to the wash fluid collection port 390. The valve 308 may be opened to allow the cleaning fluid to flow to the chamber housing 110. Previously, both valves 309 and 310 were described as initially open to allow air to purge from the chamber housing 110, but the valve 309 may be closed after a predetermined time or alternatively after liquid is detected by the sensor 322 so that the chamber housing 110 may continue to fill with liquid. As before, as shown in blocks 1110 and 1150 of fig. 11 and block 1210 of fig. 12, if liquid is detected by the sensor 322, the chamber housing 110 is full. The wafer substrate holder rotation motor may be turned on and set to a speed generally according to a control system, as shown in block 1220 of fig. 12. When the chamber housing 110 is full and the retainer 120 is rotating, the flow of the cleaning fluid may continue, or the valve 308 may close so that the flow of the cleaning fluid may stop to the chamber housing 110. After a period of time, corresponding to blocks 1230, 1240, and 1250, the cleaning fluid in the chamber housing 110 may be exhausted using a process similar to that previously described. Valves 305, 306, and 307 may be switched to allow a path from purge gas source 350. Initially, valves 309 and 310 may be open, but valve 310 may then be closed, and venting may continue until sensor 322 detects a consistent gas. It should be noted that the door of the chamber housing 110 may be locked, such as via a control system, during a particular process, process sequence, and/or process operation, such as those previously described, for example, for improved safety. Likewise, the operator may be alerted that the chamber housing remains locked, for example, such as via various indicators, which may include indicator lights, SI, etc., as non-limiting examples. After the process sequence is complete, e.g., after being completely cleaned and/or cooled, the chamber housing may then be unlocked, as shown by block 1270 of fig. 12, for example. Likewise, the various indicators can also inform the operator that engaging a portion of the FHS can be safely performed.
Other types of process sequences than GPF can be implemented by embodiments. For example, the cleaning formulation process (CPF) may be implemented as shown in fig. 13 and block 413 of fig. 4. During the cleaning process, the chamber housing 110 may be filled with a cleaning fluid. The cleaning fluid may then be agitated by the rotating wafer substrate holder 120 that is not loaded with wafers but is heated in a similar manner as the growth solution is heated. For example, after a particular GPF has been completed, the material may remain on the fluid-exposed surface, which may, for example, adversely affect subsequent GPF cycling, such as by acting as a competitive growth site for the material. Thus, cleaning cycles that remove material that may remain using cycles such as between cycles of GPF may result in more consistent quality and/or material properties. For example, dilute acid solutions, such as dilute hydrochloric acid, may be used to remove ZnO material on surfaces exposed to the growth fluid. However, since the cleaning fluid itself may contaminate material growth, a cleaning sequence similar to that performed after a GPF cycle may also be performed after cleaning is used, as shown at block 1390 of fig. 3.
In the embodiment shown in fig. 3, cleaning may be carried out by way of example by: valve 307 is set to allow cleaning fluid to be pumped from cleaning fluid source 360 to valve 308 by pump 333, opening valve 308 and setting valve 311 for the fluid flow path to collection point 380. As shown in block 1310, for example, the acid supply and return lines may be connected to the same cleaning fluid reservoir because the amount of residual material removed may be relatively small. Thus, the cleaning fluid may be reused before being replaced, thereby reducing waste, cost, and the like. The acid pump 333 may then be turned on and the acid cleaning solution may be pumped into the chamber housing 110. Valve 309 may remain closed while chamber housing 110 is filling. However, the acid solution may flow out of the top drain and the sensor 322 may signal the detection of liquid as shown at 1340. Thus, valve 309 may be opened later to allow a more unrestricted flow out, as shown at 1350. Further, as the acid pump 333 continues to circulate the cleaning fluid, the wafer substrate holder spin motor may be activated to a selected speed, as shown at 1370. After a selected amount of time, the pump 333 and motor may be shut down and the chamber housing 110 may be vented, as indicated by blocks 1370 and 1380. For example, valves 305, 306, and 307 may create a path for gas to flow to the chamber housing 110. The cleaning fluid may thus communicate to the top and bottom drains to flow out and through the valve 311 to the collection point 380. As with other venting processes, valve 310 may be closed and venting may continue through the bottom vent.
In summary, system embodiments are provided to grow material from a surrounding growth solution on one or more wafer substrates, other substrates, or other surfaces, such as via heating the growth solution to drive a chemical reaction and synthesize the material. In an embodiment, the system comprises a chamber housing, e.g. having a substantially cylinder-like shape, wherein the axis of rotation is horizontally oriented through the cylinder-like shape. The chamber housing can be sealed after receiving the wafer substrate holder and can heat a liquid growth solution that can also be contained in the chamber housing. The wafer substrate holder may be loaded with one or more wafer substrates in set positions with their flat surfaces oriented substantially normal to the axis of rotation and substantially parallel to each other. Furthermore, during operation, the heated liquid growth solution is able to flow freely around and between the wafer substrates as the wafer substrate holder rotates about the axis of rotation within the chamber housing to allow material growth.
Embodiments include a closed interconnect network Fluid Handling System (FHS) comprising: a fluid line, a fluid valve, one or more fluid pumps, one or more pressure vessels, one or more process parameter sensors, one or more fluid sources, and/or one or more fluid drains (e.g., collection points). Process embodiments including FHS and chamber housings and wafer substrate holders can be performed at least in part via a control system to affect the state of the various FHS embodiment components and create fluid flow paths between the various FHS embodiment components, including embodiments of the fluid source, the various collection points, and the chamber housing and wafer substrate holder.
In the context of this disclosure, the term "connected," the term "component," and/or similar terms are intended to be physical, but not necessarily always tangible. Thus, whether or not such terms refer to tangible subject matter, may vary within a particular context of use. As an example, a tangible connection and/or a tangible connection path may be formed, such as by a tangible electrical connection, such as a conductive path comprising a metal or other electrical conductor capable of conducting electrical current between two tangible components. Likewise, the tangible connection path may be at least partially affected and/or controlled such that, as is typical, the tangible connection path may be open or closed, sometimes caused by the effect of one or more externally derived signals, such as external current and/or voltage of an electrical switch. Non-limiting illustrations of electrical switches include transistors, diodes, and the like. However, a "connection" and/or "component" may likewise be non-tangible, although physical, in a particular context of use, such as a connection between a client and a server over a network, which typically means that the client and server are capable of transmitting, receiving, and/or exchanging communications, as discussed in greater detail later.
Thus, in a particular use context, such as the particular context in which tangible components are being discussed, the terms "coupled" and "connected" may be used in a manner such that the terms are not synonymous. Similar terms may also be used in a manner that exhibits similar intent. Thus, "connected" is used to indicate that two or more tangible components or the like are, for example, in direct physical contact, e.g., physically. Thus, using the previous example, two tangible components that are electrically connected are physically connected via a tangible electrical connection, as previously discussed. However, "coupled" is used to mean that two or more tangible components may be physically and physically in direct contact. It is also used to mean, however, that two or more tangible components or the like are not necessarily in physical direct contact but are capable of cooperating, communicating, and/or interacting, such as by being "optically coupled," for example. Likewise, the term "coupled," in the appropriate context, may be understood to mean indirectly connected. It should further be noted that in the context of the present disclosure, if used with respect to memory, such as memory components or memory states as examples, the term physical necessarily implies that the memory, such as memory components and/or memory states continuing the examples, is tangible.
Additionally, in the present disclosure, there is a distinction between "on … …" and "over … …" in the context of a particular use, as in the case of a tangible component (and/or similarly, a tangible material) being discussed. By way of example, deposition or growth of a substance "on a substrate" means that the deposition or growth involves direct physical and physical contact without intermediate substances (e.g., intermediate substances formed during intervening process operations) between the deposited substance and the substrate in the latter example; however, although it is understood that deposition or growth "on a substrate" may be included (as "on … …" may also be accurately described as "over … …"), deposition or growth "over a substrate" is understood to include the situation: wherein one or more intermediates, such as one or more intermediate substances, are present between the deposited or grown substance and the substrate such that the deposited or grown substance does not necessarily have to be in direct physical and tangible contact with the substrate.
In an appropriate specific use context, as tangible materials and/or tangible components are discussed therein, a similar distinction is made between "under … …" and "under … …". Although "under … …" is intended in this particular use context to necessarily imply physical and tangible contact (similar to the "over … …" just described), "under … …" may include instances where there is direct physical and tangible contact, but does not necessarily imply direct physical and tangible contact, such as in the presence of one or more intermediates, such as one or more intermediate substances. Thus, "on … …" is understood to mean "directly above … … (immediatelaver)" and "under … …" is understood to mean "directly below … … (immediatelaver)".
Likewise, it will be understood that terms such as "above … …" and "below … …" are to be interpreted in a manner similar to the terms "above," "below," "top," "bottom," and the like as previously mentioned. These terms are used to facilitate discussion, but are not intended to necessarily limit the scope of the claimed subject matter. For example, the term "above … …" as an example is not meant to imply that the scope of the claims is not limited to only such cases: wherein the embodiment is right side up as for example upside down compared to the embodiment. Examples include flip chips, as one illustration, where the orientation, e.g., at various times (e.g., during manufacturing), may not necessarily correspond to the orientation of the final product. Thus, if an object by way of example is in a particular orientation within the scope of the applicable claims-as one example upside down-as the latter is intended to be interpreted also as including within the scope of the applicable claims-in another orientation again as an example right side up, and vice versa-even though literal language of the applicable claims might be interpreted in other ways. Of course, again, as is the case throughout the specification of the patent application, the particular description and/or context of use provides helpful guidance as to reasonable inferences to be drawn.
Unless otherwise indicated, in the context of this disclosure, the term "or" when used in association with a list such as A, B or C is intended to mean A, B and C used in an inclusive sense and A, B or C used in an exclusive sense. Under this understanding, "and" is used in an inclusive sense and is intended to mean A, B and C; while "and/or" may be used with great care to clearly describe all of the aforementioned meanings that are contemplated, such use is not required. Additionally, the term "one or more" and/or the like is used to describe any feature, structure, characteristic, etc. in the singular and/or "is also used to describe a plurality and/or some other combination of features, structures, characteristics, etc. Moreover, unless explicitly stated otherwise, the terms "first," "second," "third," and the like are used to distinguish different aspects, as one example for different components, and not to supply numerical limitations or to imply a particular order. Likewise, the term "based on" and/or similar terms is understood to not necessarily convey an exhaustive list of factors, but to allow for the presence of additional factors not necessarily expressly described.
Furthermore, the circumstances relating to the embodiments of the claimed subject matter and subject to testing, measurement, and/or regulation with respect to degree are intended to be understood in the following manner. As an example, in a given situation, it is assumed that a value of a physical property is to be measured. Unless expressly stated otherwise, the claimed subject matter is intended to cover alternative rational approaches to at least the nature of the examples, if at least for practical purposes, testing, measuring and/or specifying with respect to degree is reasonably possible for one of ordinary skill. Unless expressly stated otherwise, as an example, if generating a measurement plot for an entire region and implementing the claimed subject matter refers to taking a measurement of the slope over a region, but various reasonable and alternative techniques exist for evaluating the slope over that region, the claimed subject matter is intended to encompass those reasonable alternative techniques even if those reasonable alternative techniques do not provide the same value, the same measurement, or the same result.
It should further be noted that the terms "type" and/or "class" using "optical" or "electrical" as a simple example means and/or relating to a feature, structure, characteristic, etc., as used with the feature, structure, characteristic, etc., in such a way that the presence of minor variations (even though may not otherwise be considered as variations exactly consistent with the feature, structure, characteristic, etc.) does not generally prevent the feature, structure, characteristic, etc., from being of the "type" and/or "class" (such as, for example, of the "optical type" or "optical-like") if the minor variations are sufficiently minor that the feature, structure, characteristic, etc., would still be considered significantly present if such variations were also present. Thus, continuing this example, the terms optical-type property and/or optical-like property are necessarily intended to encompass optical properties. Likewise, the terms electrical type property and/or electrical-like property as another example are necessarily intended to encompass electrical properties. It should be noted that the description of the present disclosure provides one or more illustrative examples only and that the claimed subject matter is not intended to be limited to one or more illustrative examples; again, however, as has been the case with the description of the patent application, the particular description and/or context of use provides helpful guidance as to reasonable inferences to be drawn.
In the event of a technical advance, it is more typical to employ distributed computing and/or communication methods, where a portion of the process, such as, for example, signal processing of signal samples, may be distributed among various devices, including one or more client devices, one or more server devices, and/or one or more peer devices, e.g., via a computing and/or communication network. A network may include two or more devices such as network devices and/or computing devices and/or may couple devices such as network devices and/or computing devices such that signal communications, such as, for example, in the form of signal packets and/or signal frames (e.g., comprising one or more signal samples), may be exchanged, such as between server devices, client devices, and/or peer devices, as well as other types of devices, including between wired and/or wireless devices coupled via, for example, a wired and/or wireless network.
Examples of distributed computing systems include so-called Hadoop distributed computing systems that employ a map-reduce type architecture. In the context of the present disclosure, the term map-reduce architecture and/or similar terms are intended to refer to distributed computing system implementations and/or embodiments for processing and/or for generating a larger set of signal samples that employ mapping and/or reduction operations for parallel distributed processes carried out over a network of devices. Mapping operations and/or similar terms refer to one or more devices that process signals (e.g., signal samples) to generate one or more key-value pairs and distribute the one or more pairs to a system (e.g., a network). Reduction operations and/or similar terms refer to processing signals (e.g., signal samples) via inductive operations (e.g., such as counting the number of students in a queue, thereby generating a name frequency, etc.). In embodiments, the system may employ this architecture, such as by orchestrating distributed server devices, performing various tasks in parallel, and/or managing communications, such as signaling between various portions of the system (e.g., a network). As mentioned, one non-limiting but well-known example includes a hadoop distributed computing system. The Haodu distributed computing system refers to an open source implementation and/or embodiment of a map-reduce architecture (available from the Apache Software Foundation 1901 Mustway Atazai Software Foundation (1901 Munsey Drive, force Hill, MD, 21050) 21050, Fraudu distributed File System (HDFS) (available from 21050 Sustway Atazai Software Foundation 1901, Frastway, Mnland, 21047)), but may include other aspects. Thus, in general, "hedyp" and/or similar terms (e.g., "hedyp-type," etc.) refer to implementations and/or embodiments of schedulers for performing large processing jobs using a map-reduce architecture via a distributed system. Moreover, in the context of the present disclosure, use of the term "hedep" is intended to encompass versions that are currently known and/or yet to be developed at a later time.
In the context of the present disclosure, the term network device refers to any device capable of communicating via and/or as part of a network and may include a computing device. Although a network device may be capable of communicating signals (e.g., signal packets and/or frames), such as via a wired and/or wireless network, it may also be capable of performing operations associated with a computing device, such as arithmetic and/or logical operations, processing and/or storing operations (e.g., storing signal samples) as tangible physical memory states, such as in non-transitory memory, and/or may operate as, for example, a server device and/or a client device in various embodiments. A network device capable of operating as a server device, a client device, and/or otherwise may include, as examples, a dedicated rack-mounted server, a desktop computer, a laptop computer, a set-top box, a tablet computer, a notebook, a smartphone, a wearable device, an integrated device combining two or more features of the foregoing devices, and the like, or any combination thereof. As mentioned, signal packets and/or frames may be exchanged, for example, between server devices and/or client devices, as well as other types of devices, including between wired and/or wireless devices coupled, for example, via a wired and/or wireless network, or any combination thereof. It should be noted that the terms server, server device, server computing platform, and/or the like may be used interchangeably. Similarly, the terms client, client device, client computing platform, and/or the like may also be used interchangeably. Although these terms may be used in the singular for ease of description in some cases, such as reference to a "client device" or a "server device," the description is intended to include one or more client devices and/or one or more server devices, as appropriate. Along similar lines, reference to a "database" is understood to mean one or more databases or portions thereof, as appropriate.
It should be understood that, for ease of description, network devices (also referred to as networking devices) may be implemented and/or described in terms of computing devices, and vice versa. It should be further understood, however, that this description should in no way be construed to limit claimed subject matter to one implementation, such as only computing devices and/or only network devices, but may instead be implemented as various devices or combinations thereof, including for example one or more illustrative examples.
The network may also encompass arrangements, derivations and/or improvements now known and/or later developed that include, for example, past, present and/or future mass storage devices, such as, for example, Network Attached Storage (NAS), Storage Area Network (SAN) and/or other forms of device-readable media. The network may include a portion of the internet, one or more Local Area Networks (LANs), one or more Wide Area Networks (WANs), wired connections, wireless connections, other connections, or any combination thereof. Thus, the network may be global in scope and/or extent. Likewise, the sub-networks may interoperate within a larger network, such as may employ different architectures and/or may be substantially compliant and/or substantially compatible with different protocols, such as network computing and/or communication protocols (e.g., network protocols).
In the context of the present disclosure, the term subnetwork and/or similar term, when used, for example, with respect to a network, refers to the network and/or portions thereof. A sub-network may also include links, such as physical links connecting and/or coupling nodes, to enable communication of signal packets and/or frames between devices of a particular node, including via wired links, wireless links, or a combination thereof. Various types of devices, such as network devices and/or computing devices, may be made available such that device interoperability is enabled and/or may be transparent in at least some instances. In the context of the present disclosure, the term "transparent" when used in relation to a particular communication device of a network refers to a device that communicates via the network in which the device is capable of communicating via one or more intermediate devices, such as one or more intermediate nodes, but no communication device necessarily specifies the one or more intermediate nodes and/or the one or more intermediate devices of the one or more intermediate nodes. Thus, the network may include the one or more intermediate nodes and/or the one or more intermediate devices of the one or more intermediate nodes in communication and the network may engage in communication via the one or more intermediate nodes and/or the one or more intermediate devices of the one or more intermediate nodes, but the network may operate as if such intermediate nodes and/or intermediate devices are not necessarily involved in communication between particular communication devices. For example, a router may provide links and/or links between LANs that are otherwise separate and/or independent.
In the context of the present disclosure, a "private network" refers to a particular limited set of devices, such as network devices and/or computing devices, that are capable of communicating with other devices, such as network devices and/or computing devices, in the particular limited set, such as, for example, via signal packet and/or signal frame communications, without rerouting and/or redirecting signal communications. The private network may comprise a standalone network; however, the private network may also comprise a subset of a larger network, such as, for example, but not limited to, all or a portion of the internet. Thus, for example, a "private in the cloud" network may refer to a private network that includes a subset of the internet. Although signal packet and/or frame communications (e.g., signal communications) may employ intermediate devices of intermediate nodes to exchange signal packets and/or signal frames, those intermediate devices may not necessarily be included in the private network, as they are not the source or intended purpose of one or more signal packets and/or signal frames. It should be understood that in the context of the present disclosure, a private network may be able to direct outgoing signal communications to devices that are not in the private network, but devices outside the private network may not necessarily be able to direct inbound signal communications to devices included in the private network.
The internet refers to a decentralized global network of interoperable networks compliant with the Internet Protocol (IP). It should be noted that there are several versions of the internet protocol. The terms internet protocol, IP, and/or the like are intended to refer to any version now known and/or later developed. The internet comprises Local Area Networks (LANs), Wide Area Networks (WANs), wireless networks, and/or remote networks that may allow, for example, signal packets and/or frames to be communicated between LANs. The term world wide Web (WWW or Web) and/or similar terms may also be used, but refer to the hypertext transfer protocol (HTTP) -compliant portion of the internet. For example, a network device may participate in an HTTP session by exchanging appropriately substantially compatible and/or substantially compliant signal packets and/or frames. It should be noted that there are several versions of hypertext transfer protocols. The terms hypertext transfer protocol, HTTP and/or the like are intended to refer to any version now known and/or to be developed later. It should also be noted that, in various places in this document, the replacement of the term internet with the term world wide Web ("Web") can be made without significant departure in meaning, and thus can also be understood in that way, if a statement is made that it is still correct under this replacement.
Although claimed subject matter is not particularly limited in scope to the internet and/or the Web; however, the internet and/or the Web may provide useful examples of embodiments, at least for illustrative purposes and not by way of limitation. As shown, the internet and/or the Web may include a global interoperable network system, including interoperable devices within those networks. The internet and/or the Web have evolved into self-sustaining facilities that may be available to billions or more of people worldwide. Also, in embodiments and as mentioned above, the terms "WWW" and/or "Web" refer to portions of the internet that are compliant with the hypertext transfer protocol. Thus, the internet and/or the Web may, in the context of this disclosure, include services that organize stored digital content, such as text, images, video, etc., for example, through the use of hypermedia. It should be noted that networks such as the internet and/or the Web may be used to store electronic files and/or electronic documents.
The term electronic file and/or the term electronic document are used throughout this document to refer to a set of stored memory states and/or a set of physical signals that are associated in such a manner as to at least logically form a file (e.g., electronic) and/or an electronic document. That is, it is not meant to implicitly reference, for example, a particular syntax, format and/or method used in connection with a set of associated memory states and/or a set of associated physical signals. A particular type of file format and/or syntax is explicitly mentioned if it is, for example, intended. It should further be noted that the association of memory states may be in a logical sense and not necessarily in a physical sense, for example. Thus, while the signal and/or state components of a file and/or electronic document, for example, should be logically associated, in embodiments, their storage may reside, for example, in one or more different locations in tangible physical memory.
Hypertext markup language ("HTML"), for example, may be used to specify digital content and/or specify the format thereof, such as in the form of electronic files and/or electronic documents, such as, for example, Web pages, Web sites, and the like. In embodiments, extensible markup language ("XML") may also be used to specify digital content and/or specify the format thereof, such as in the form of electronic files and/or electronic documents, such as web pages, web sites, and the like. Of course, HTML and/or XML are merely examples of "markup" languages, provided as non-limiting illustrations. Moreover, HTML and/or XML is intended to refer to any version of these languages that is now known and/or yet to be developed later. Likewise, the claimed subject matter is, of course, not intended to be limited to the examples provided as illustrations.
In the context of the present disclosure, the term "website" and/or similar terms refers to web pages that are electronically associated to form a particular collection thereof. Also, in the context of the present disclosure, a "Web page" and/or similar terms refers to an electronic file and/or electronic document accessible via a network, including in example embodiments by specifying a Uniform Resource Locator (URL) for access via the Web. As mentioned above, in one or more embodiments, a web page may comprise digital content, including HTML and/or XML, encoded using one or more languages, such as, for example, a markup language (e.g., via computer instructions), although claimed subject matter is not limited in scope in this respect. Also, in one or more embodiments, the application developer may write code (e.g., computer instructions) in a form that may be executed, for example, by a computing device to provide digital content to populate an electronic document and/or electronic file in an appropriate format, such as, for example, JavaScript (or other programming language) for a particular application. Use of the term "Java script" and/or similar terms is intended to refer to one or more particular programming languages as any version of the one or more identified programming languages that is now known and/or that is to be developed later. Thus, Java scripts are merely example programming languages. As mentioned, the claimed subject matter is not intended to be limited to examples and/or illustrations.
In the context of this disclosure, "item," "electronic item," "document," "electronic document," "content," "digital content," "item," and/or similar terms are intended to refer to signals and/or state in a physical format, such as a digital signal and/or digital state format, which may be perceived by a user, e.g., when displayed, played, haptically generated, etc., and/or otherwise performed by a device, such as a digital device, including, e.g., a computing device, but which otherwise may not necessarily be readily perceptible to a human being (e.g., when in a digital format). As such, in the context of the present disclosure, digital content provided to a user in a form that enables the user to readily perceive the underlying content itself (e.g., content presented in a form that can be consumed by humans, such as, by way of example, listening to audio, feeling haptic, and/or looking at images) is referred to as "consumed" digital content, "consumed" digital content of the digital content, "consumable" digital content, and/or the like. For one or more embodiments, the electronic document and/or electronic file may comprise, for example, a web page of code (e.g., computer instructions) in a markup language that is or is to be executed by a computing and/or networked device. In another embodiment, the electronic document and/or electronic file may include some portion and/or area of a web page. However, claimed subject matter is not intended to be limited in these respects.
Also, for one or more embodiments, an electronic document and/or electronic file may include multiple components. As indicated previously, in the context of the present disclosure, a component is physical, but not necessarily tangible. As an example, in one or more embodiments, components that reference electronic documents and/or electronic files may include text, for example, in the form of physical signals and/or physical states (e.g., memory states that can be physically displayed and/or maintained in tangible memory). Typically, a memory state includes, for example, tangible components, while a physical signal is not necessarily tangible, but it is not uncommon for a signal to become (e.g., manufactured) tangible, as, for example, when appearing on a tangible display. Also, for one or more embodiments, components that reference electronic documents and/or electronic files may include graphical objects, such as, for example, graphics, such as digital images, and/or sub-objects, including attributes thereof, which again include physical signals and/or physical states (e.g., memory states that can be tangibly displayed and/or maintained in tangible memory). In embodiments, the digital content may include, for example, text, images, audio, video, haptic content, and/or other types of electronic documents and/or electronic files containing, for example, portions thereof.
Also, in the context of the present disclosure, the term parameter (e.g., one or more parameters) refers to a material that describes a set of signal samples, such as one or more electronic documents and/or electronic files, and exists in the form of a physical signal and/or a physical state, such as a memory state. For example, the one or more parameters, such as with respect to an electronic document and/or electronic file comprising an image, may include a time of day at which the image was captured, a latitude and longitude of an image capture device, such as, for example, a camera, and so forth, as examples. In another example, the one or more parameters relating to the digital content, such as digital content including, as an example, an article of technology, may include, for example, one or more authors. The claimed subject matter is intended to encompass meaningful descriptive parameters in any format, so long as the one or more parameters include a physical signal and/or state, which may include, as examples of parameters, a collection name (e.g., an electronic file and/or electronic document identifier name), a creation technique, a creation purpose, a creation time and date, a logical path when stored, an encoding format (e.g., a type of computer instruction, such as a markup language), and/or a standard and/or specification used in order to have protocol compliance (e.g., meaning substantially compliant and/or substantially compatible) for one or more uses, and so forth.
Signal packet communications and/or signal frame communications, also referred to as signal packet transmissions and/or signal frame transmissions (or just "signal packets" or "signal frames"), may be communicated between nodes of a network, where the nodes may include, for example, one or more network devices and/or one or more computing devices. As an illustrative example, but not by way of limitation, a node may comprise one or more sites employing local network addresses as in a local network address space. Likewise, a device, such as a network device and/or a computing device, may be associated with that node. It should also be noted that in the context of the present disclosure, the term "transmission" is intended as another term for the type of signal communication that may occur in any of a variety of situations. Thus, it is not intended to imply a particular directionality of communication and/or a particular originating end of a communication path for "transferring" the communication. For example, in the context of the present disclosure, the use of the term alone is not intended to have a particular implication with respect to the one or more signals communicated, such as, for example, whether a signal is communicated "to" a particular device, whether a signal is communicated "from" a particular device, and/or with respect to which end of a communication path may initiate communication, such as, for example, in "push-type" signaling or "pull-type" signaling. In the context of the present disclosure, push and/or pull type signaling is distinguished by which end of the communication path initiates signaling.
Accordingly, signal packets and/or frames may be communicated from a site via an access node coupled to the internet, and vice versa, by way of example, over communication channels and/or communication paths, such as those comprising a portion of the internet and/or the Web. Likewise, signal packets and/or frames may be forwarded via the network node to a destination station coupled to, for example, a local network. Signal packets and/or frames communicated via the internet and/or Web may be routed, for example, via a path as belonging to a "push" or "pull" type, including one or more gateways, servers, etc., that may route the signal packets and/or frames, for example, as may be generally dependent on availability of a destination and/or destination address to the destination and/or destination address and a network path of the network node, for example. While the internet and/or the Web include networks of interoperable networks, not all of those interoperable networks are necessarily publicly available and/or accessible.
In the context of particular disclosures, network protocols, such as those used for communicating between devices of a network, may be characterized, at least in part, generally in accordance with a layered description, such as the so-called Open Systems Interconnection (OSI) seven-layer approach and/or description. Network computing and/or communication protocols (also referred to as network protocols) refer to sets of signaling conventions as used, for example, for communication transmissions as may occur between and/or among devices in a network. In the context of the present disclosure, the term "between … …" and/or similar terms are understood to include "within … …" as appropriate for a particular use, and vice versa. Likewise, in the context of the present disclosure, the terms "compatible," "compliant," and/or similar terms are understood to encompass substantially compatible and/or substantially compliant, respectively.
Network protocols such as those generally characterized in accordance with the aforementioned OSI description have several layers. These layers are referred to as the network stack. Various types of communications (e.g., transmissions), such as network communications, may occur across the various layers. The lowest level layers in a network stack, such as the so-called physical layer, may be characterized as how symbols (e.g., bits and/or bytes) are conveyed as one or more signals (and/or signal samples) via a physical medium (e.g., twisted copper pair, coaxial cable, fiber optic cable, wireless air interface, combinations thereof, and so forth). Proceeding to higher level layers in the network protocol stack, additional operations and/or features may be available via participation in communications that are substantially compatible and/or substantially compliant with the particular network protocol at these higher level layers. For example, higher level layers of the network protocol may, for example, affect device permissions, user permissions, and the like.
In embodiments, the networks and/or sub-networks may communicate via signal packets and/or signal frames, such as via participating digital devices, and may be substantially compliant and/or substantially compatible with, but not limited to, presently known and/or yet to be developed versions of any of the following network protocol stacks: ARCNET, AppleTalk, ATM, Bluetooth, DECnet, Ethernet, FDDI, frame Relay, HIPPI, IEEE 1394, IEEE 802.11, IEEE-488, Internet protocol suite, IPX, Myrinet, OSI protocol suite, QsNet, RS-232, SPX, System network architecture, token Ring, USB, and/or X.25. The networks and/or sub-networks may take on presently known and/or later-developed versions such as the following: TCP/IP, UDP, DECnet, NetBEUI, IPX, AppleTalk, and the like. Versions of the Internet Protocol (IP) may include IPv4, IPv6, and/or other versions to be developed later.
With respect to aspects related to networks, including communication and/or computing networks, a wireless network may couple a device, including a client device, with a network. The wireless network may employ a standalone ad hoc network, a mesh network, a wireless lan (wlan) network, a cellular network, and so forth. The wireless network may further comprise a system of terminals, gateways, routers etc. coupled by radio links etc. which may move freely, randomly and/or organize themselves arbitrarily, so that the network topology may change sometimes even rapidly. The wireless network may further employ a variety of network access technologies, including Long Term Evolution (LTE), WLAN, Wireless Router (WR) networks, 2 nd, 3 rd or 4 th generation (2G, 3G or 4G) cellular technologies, and the like, whether presently known and/or to be later developed versions. Network access technologies may enable a wide coverage area of devices, such as computing devices and/or network devices having varying degrees of mobility.
The network may enable radio frequency and/or other wireless type communications via wireless network access technologies and/or air interfaces, such as global system for mobile communications (GSM), Universal Mobile Telecommunications System (UMTS), general packet radio technology (GPRS), Enhanced Data GSM Environment (EDGE), 3GPP Long Term Evolution (LTE), LTE advanced Wideband Code Division Multiple Access (WCDMA), bluetooth, Ultra Wideband (UWB), IEEE 802.11 (including but not limited to IEEE 802.11b/g/n), and so forth. A wireless network may encompass virtually any type of now known and/or yet to be developed wireless communication mechanism and/or wireless communication protocol in which such signals may be communicated between devices, between networks, within a network, and the like, including, of course, the foregoing.
In one embodiment, as shown in FIG. 14, a system embodiment may include a local network (e.g., device 204 and/or media 240) and/or another type of network, such as a computing and/or communication network. Thus, for purposes of illustration, fig. 14 shows an embodiment 200 of a system that may be used to implement either or both types of networks. Network 208 may include one or more network connections, links, processes, services, applications, and/or resources for facilitating and/or supporting communication, such as exchanging communication signals, for example, between a computing device, such as 202, and another computing device, such as 206, which may include, for example, one or more client computing devices and/or one or more server computing devices. By way of example, and not limitation, network 208 may include wireless and/or wired communication links, telephone and/or telecommunications systems, Wi-Fi networks, Wi-MAX networks, the Internet, a Local Area Network (LAN), a Wide Area Network (WAN), or any combination thereof.
In embodiments, the example device in fig. 14 may include features of a client computing device and/or a server computing device, for example. It should further be noted that the term computing device may be used to implement a control system as previously discussed and refers at least to a processor and memory connected by a communication bus. Likewise, at least in the context of the present disclosure, this is understood to refer to sufficient structure within the meaning of 35 § USC 112(f), such that 35 § USC 112(f) is not intended to be implied by use of the terms "control system", "computing device", and/or the like, among other things; however, if for some reason that is not immediately apparent it is determined that the foregoing understanding is not conclusive and 35 § USC 112(f) must therefore be implied by using these and/or similar terms, then according to that statutory portion, the corresponding structures, materials and/or acts for carrying out one or more functions are intended to be understood and interpreted as being described at least in fig. 4 through 13 and the associated paragraphs of the present disclosure.
Referring now to fig. 14, in an embodiment, the first device 202 and the third device 206 may be capable of enhancing a Graphical User Interface (GUI) of the network device and/or the computing device, for example, such that a user-operator may participate in system usage. In this illustration, device 204 may provide similar functionality. Likewise, in fig. 14, computing device 202 ('first device' in the figure) may interface with computing device 204 ('second device' in the figure), which in embodiments may, for example, include features of a client computing device and/or a server computing device. A processor (e.g., processing device) 220 and a memory 222, which may include a main memory 224 and a secondary memory 226, may communicate, for example, over a communication bus 215. The term "computing device" in the context of this disclosure refers to a system and/or device, such as a computing apparatus, that includes the ability to process (e.g., perform calculations) and/or store digital content, such as electronic files, electronic documents, measurements, text, images, video, audio, and so forth, in the form of signals and/or states. Thus, in the context of the present disclosure, a computing device may include hardware, software, firmware, or any combination (other than software)Itself isAnd out). Computing device 204, as depicted in fig. 14, is merely one example, and claimed subject matter is not limited in scope to this particular example.
For one or more embodiments, the computing device may comprise, for example, any of a wide range of digital electronic devices, including but not limited to desktop and/or notebook computers, cellular telephones, tablet devices, wearable devices, personal digital assistants, or any combination of the foregoing. Further, unless explicitly stated otherwise, the processes as described, as referenced to the flow diagrams and/or otherwise, may also be performed in whole or in part by and/or effected by a computing device and/or network device. Devices such as computing devices and/or network devices may vary in capabilities and/or features. The claimed subject matter is intended to cover a wide range of possible variations. For example, a device may include a web-enabled device that includes a physical and/or virtual keyboard, a mass storage device, one or more accelerometers, one or more gyroscopes, a Global Positioning System (GPS) and/or other capability to identify a location type, and/or a display with a high degree of functionality such as, for example, a touch-sensitive color 2D or 3D display.
As previously set forth, communication between the computing device and/or the network device and the wireless network may be in accordance with known and/or yet to be developed network protocols, including, for example, global system for mobile communications (GSM), enhanced data rates for GSM evolution (EDGE), 802.11b/g/n/h, etc., and/or Worldwide Interoperability for Microwave Access (WiMAX). The computing device and/or networked device may also have a Subscriber Identity Module (SIM) card, which may include, for example, a removable or embedded smart card capable of storing the user's subscription content and/or also capable of storing a contact list. The user may own the computing device and/or the network device or may otherwise be a user, such as a primary user, for example. The device may be assigned an address by a wireless network operator, a wired network operator, and/or an Internet Service Provider (ISP). For example, the address may include a national or international telephone number, an Internet Protocol (IP) address, and/or one or more other identifiers. In other embodiments, the computing and/or communication network may be implemented as a wired network, a wireless network, or any combination thereof.
The computing and/or networking device may contain and/or may execute various now known and/or yet to be developed operating systems, derivatives and/or versions thereof, including computer operating systems such as Windows, iOS, Linux, mobile operating systems such as iOS, android, Windows Mobile, and the like. The computing device and/or network device may contain and/or may execute a variety of possible applications, such as a client software application that enables communication with other devices. For example, one or more messages (e.g., content) may be communicated, including via a network, as via one or more protocols now known and/or later developed that are suitable for communicating email, Short Message Service (SMS), and/or Multimedia Message Service (MMS). The computing and/or network devices may also contain executable computer instructions for processing and/or communicating digital content, such as, for example, textual content, digital multimedia content, and the like. The computing and/or networking device may also contain executable computer instructions for performing various possible tasks, such as browsing, searching, playing various forms of digital content, including locally stored and/or streamed video and/or games such as, but not limited to, fantasy sports leagues. The foregoing is merely provided to illustrate that the claimed subject matter is intended to encompass a wide range of possible features and/or capabilities.
In fig. 14, computing device 202 may provide one or more sources of executable computer instructions, for example, in the form of physical states and/or signals (e.g., stored in a memory state). Computing device 202 may communicate with computing device 204 through a network connection, such as, for example, via network 208. As mentioned previously, a connection, although physical, may not necessarily be tangible. Although computing device 204 of fig. 14 shows various tangible physical components, claimed subject matter is not limited to computing devices having only these tangible components, as other implementations and/or embodiments may include alternative arrangements that may include additional or fewer tangible components that function differently, for example, in achieving similar results. Rather, the examples are provided by way of illustration only. The claimed subject matter is not intended to be limited in scope by the illustrative examples.
Memory 222 may include any non-transitory storage mechanism. Memory 222 may include, for example, a main memory 224 and a secondary memory 226, additional memory circuits, mechanisms, or combinations thereof may be used. Memory 222 may include, for example, random access memory, read only memory, and the like, such as in the form of one or more storage devices and/or systems, such as, for example, a hard disk drive including, for example, an optical disk drive, a magnetic tape drive, a solid state memory drive, and the like, to name a few.
The memory 222 may be used to store programs of executable computer instructions. For example, processor 220 may retrieve executable instructions from memory and execute the retrieved instructions. Memory 222 may also include a memory controller for accessing a device-readable medium 240 that may carry and/or form accessible digital content that may contain code and/or instructions executable, for example, by processor 220 and/or some other device, such as, for example, a controller capable of executing computer instructions, as one example. Under the direction of the processor 220, non-transitory memory, such as memory units storing physical state (e.g., memory state) including, for example, programs of executable computer instructions, may be executed by the processor 220 and capable of generating signals, for example, for communication via a network as previously described. As also previously suggested, the generated signal may also be stored in a memory.
Memory 222 may store electronic files and/or electronic documents, such as with respect to one or more users, and may also include a device-readable medium that may carry and/or form accessible content containing code and/or instructions that may be executed, for example, by processor 220 and/or some other device, such as, for example, a controller capable of executing computer instructions, as one example. As previously mentioned, the term electronic file and/or the term electronic document is used throughout this document to refer to a set of stored memory states and/or a set of physical signals that are associated in such a manner as to thereby form the electronic file and/or the electronic document. That is, it is not meant to implicitly reference, for example, a particular syntax, format and/or method used in connection with a set of associated memory states and/or a set of associated physical signals. It should further be noted that the association of memory states may be in a logical sense and not necessarily in a physical sense, for example. Thus, while signal and/or state components of an electronic file and/or electronic document should be logically associated, in embodiments, their storage may reside, for example, in one or more different locations in tangible physical memory.
Algorithmic descriptions and/or symbolic representations are examples of techniques used by those of ordinary skill in the signal processing and/or related arts to convey the substance of their work to others skilled in the art. An algorithm is in the context of this disclosure and is generally considered to be a self-consistent sequence of operations and/or similar signal processing leading to a desired result. In the context of the present disclosure, operations and/or processing involve physical manipulation of physical quantities. Usually, though not necessarily, these quantities may take the form of electrical and/or magnetic signals and/or states capable of being stored, transferred, combined, compared, processed and/or otherwise manipulated as electronic signals and/or states constituting components of various forms of digital content, such as signal measurements, text, images, video, audio and the like.
It has proven convenient at times, principally for reasons of common usage, to refer to such physical signals and/or physical states as bits, values, elements, parameters, symbols, characters, terms, numbers, measurements, contents, or the like. It should be understood, however, that all of these and/or similar terms are to be associated with the appropriate physical quantities and are merely convenient labels. Unless specifically stated otherwise, as apparent from the preceding discussion, it is appreciated that throughout the description, discussions utilizing terms such as "processing," "computing," "calculating," "determining," "establishing," "obtaining," "identifying," "selecting," "generating," or the like, may refer to the actions and/or processes of a specific apparatus, such as a special purpose computer and/or similar special purpose computing and/or network device. Thus, in the context of this specification, a special purpose computer and/or similar special purpose computing and/or networking device is capable of processing, manipulating and/or transforming signals and/or states generally in the form of: physical electronic and/or magnetic quantities within memories, registers, and/or other storage devices, processing devices, and/or display devices of the special-purpose computing and/or network devices. In the context of this particular disclosure, as mentioned, the term "particular apparatus" thus encompasses general purpose computing and/or network devices, such as general purpose computers, once programmed to perform particular functions, such as in accordance with program software instructions.
In some cases, an operation of a memory device, such as a state change from a binary one to a binary zero or vice versa, may include a translation, such as a physical translation, for example. In the case of a particular type of memory device, this physical translation may include a physical translation of the article to a different state or article. For example, and without limitation, for certain types of memory devices, a state change may involve the accumulation and/or storage of charge or the release of stored charge. Likewise, in other memory devices, the state change may include a physical change, such as a translation of a magnetic orientation. Likewise, a physical change may include a transformation of the molecular structure, such as from a crystalline form to an amorphous form, or vice versa. In still other memory devices, the physical state change may involve quantum mechanical phenomena such as stacking, entanglement, etc., which may involve, for example, qubits (qubits). The foregoing is not intended to be an exhaustive list of all examples in which a state change from a binary one to a binary zero or vice versa in a memory device may include a translation such as a physical but non-transitory translation. Rather, the foregoing is intended as an illustrative example.
Referring again to fig. 14, processor 220 may include one or more circuits such as digital circuits for carrying out at least a portion of the computational process and/or processes. By way of example and not limitation, processor 220 may include one or more processors, such as a controller, microprocessor, microcontroller, application specific integrated circuit, field programmable gate array, or the like, or any combination thereof. In various implementations and/or embodiments, processor 220 may generally perform signal processing in accordance with retrieved executable computer instructions, such as to manipulate signals and/or states, construct signals and/or states, etc., which are generated in such a manner as to be communicated to and/or stored in memory, for example.
Fig. 14 also shows device 204 as including, for example, components 232 operable with input/output devices such that signals and/or states may be suitably communicated between devices, such as between device 204 and an input device and/or between device 204 and an output device. The user may use an input device such as a computer mouse, a stylus, a trackball, a keyboard and/or any other similar device capable of receiving user actions and/or movements as input signals. Likewise, the user may use output devices such as a display, printer, etc. and/or any other device capable of providing signals and/or generating stimuli such as visual stimuli, audio stimuli, and/or other similar stimuli to the user.
In the foregoing description, various aspects of the claimed subject matter have been described. For purposes of explanation, details as an example, quantities, systems, and/or configurations, are set forth. In other instances, well-known features are omitted and/or simplified in order not to obscure claimed subject matter. While certain features have been illustrated and/or described herein, many modifications, substitutions, changes, and/or equivalents will now occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and/or changes as fall within the claimed subject matter.

Claims (19)

1. An apparatus, comprising: a wafer substrate holder; a fluid sealable chamber housing; and a programmable closed fluid treatment system;
the chamber housing having a cylindrical-like shape and a cavity sized to receive and enclose the wafer substrate holder;
the chamber housing is used for heating zinc oxide which is also enclosed in the chamber housing cavity to form a growth solution;
the wafer substrate holder is for being received within the chamber housing in a manner that relatively securely positions at least one wafer substrate such that planar surfaces of the at least one wafer substrate are substantially parallel to each other and a planar end of the chamber housing; and
a drive mechanism for engaging the chamber housing and/or the wafer substrate holder in a manner that mixes the growth solution when enclosed within the chamber housing,
wherein a drive mechanism for engaging the chamber housing and/or the wafer substrate holder in a manner that mixes the growth solution when enclosed within the chamber housing cavity comprises a drive mechanism for engaging the chamber housing and/or the wafer substrate holder so as to mix the growth solution via relative rotation between the chamber housing and the wafer substrate holder,
wherein the wafer substrate holder and/or the chamber housing rotate one relative to the other about an axis of rotation that is substantially perpendicular to the planar surface of the at least one wafer substrate and substantially through the center of the at least one wafer substrate,
wherein the wafer substrate holder and/or the chamber housing rotate one with respect to the other and at a relative speed so as to produce a relatively uniform temperature growth solution during growth synthesis and so as to continuously mix the growth solution via action due to the rotational motion, and
wherein a programmable closed fluid processing system comprises an interconnection network having fluid lines, fluid valves, one or more process parameter sensors, one or more pressure vessels, one or more fluid pumps, one or more fluid sources, and/or one or more fluid drains, the interconnection network connected to the chamber housing by being connected to at least one inlet and to at least one outlet, wherein the programmable closed fluid processing system is programmed to completely fill an unpressurized chamber housing with the growth solution and to pressurize the chamber housing containing the growth solution after filling.
2. The apparatus of claim 1, wherein the wafer substrate holder comprises the following structure: wherein the wafer substrate holders are to be positioned within the chamber housing in a manner such that during rotation, the growth solution is flowable within the chamber housing so as to contact the planar surface of the at least one wafer substrate and flow around at least one wafer and between the wafer substrates for more than one of the wafer substrate holders in a manner consistent with a relatively low temperature aqueous solution growth process recipe of selected process parameters.
3. The apparatus of claim 1, wherein the wafer substrate holder is for engaging the drive mechanism via a drive arm connector or a drive arm rotor, the drive arm connector or drive arm rotor being structured to mate with the wafer substrate holder during a drive operation such that the wafer substrate holder is rotatable while the chamber housing remains stationary and is disengageable so as to allow the wafer substrate holder to be removed from the chamber housing.
4. The apparatus of claim 3, wherein the drive arm connector or the drive arm rotor is connected to a mechanical drive motor to rotate a drive arm.
5. The apparatus of claim 1, wherein the wafer substrate holder and/or the chamber housing are for engaging a drive mechanism comprising a magnetic drive mechanism.
6. The apparatus of claim 1, wherein the at least one wafer substrate is for being relatively securely held in place in the wafer substrate holder via geometric features for mating with an edge of the at least one wafer substrate.
7. The apparatus of claim 6, wherein the geometric feature comprises a groove.
8. The apparatus of claim 6, wherein the at least one wafer substrate comprises two or more wafer substrates relatively securely positioned in the wafer substrate holder such that the two or more wafer substrates are substantially parallel to each other and substantially parallel to the flat end of the chamber housing.
9. The apparatus of claim 1, wherein growth solution is for being received in the chamber housing via one or more of the inlets and growth solution is for being discharged from the chamber housing via one or more of the outlets.
10. The apparatus of claim 1, wherein the chamber housing and the wafer substrate holder are formed from materials that are resistant to corrosion from exposure to growth solutions and/or resistant to contamination of the growth solutions.
11. The apparatus of claim 1, wherein the growth solution within the chamber housing is to be heated via heat transfer between a thermally conductive shell and an inner chamber wall of the chamber housing.
12. The apparatus of claim 1, wherein the growth solution within the chamber housing is to be heated via an absorption radiation source.
13. The apparatus of claim 12, wherein the radiation source comprises a microwave radiation source.
14. The apparatus of claim 1, wherein the chamber housing is to receive the wafer substrate holder via an end of the chamber housing that is openable and closable and relatively securely sealable to contain a fluid.
15. An apparatus, comprising: a wafer substrate holder; a fluid sealable chamber housing; and a programmable closed fluid treatment system;
the chamber housing having a cylindrical-like shape and a cavity sized to receive and enclose the wafer substrate holder;
the chamber housing is used for heating zinc oxide which is also enclosed in the chamber housing cavity to form a growth solution;
the wafer substrate holder is for receipt within the chamber housing in a manner so as to position more than one wafer substrate relatively securely in a common plane such that the planar surfaces of the more than one wafer substrate are substantially parallel to each other and the planar end of the chamber housing;
and a drive mechanism for mixing the growth solution contained in the chamber housing,
wherein a drive mechanism for engaging the chamber housing and/or the wafer substrate holder in a manner that mixes the growth solution when enclosed within the chamber housing cavity comprises a drive mechanism for engaging the chamber housing and/or the wafer substrate holder so as to mix the growth solution via relative rotation between the chamber housing and the wafer substrate holder,
wherein the wafer substrate holder and/or the chamber housing rotate one relative to the other about an axis of rotation that is substantially perpendicular to the planar surface of the at least one wafer substrate and substantially through the center of the at least one wafer substrate,
wherein the wafer substrate holder and/or the chamber housing rotate one with respect to the other and at a relative speed so as to produce a relatively uniform temperature growth solution during growth synthesis and so as to continuously mix the growth solution via action due to the rotational motion, and
wherein a programmable closed fluid processing system comprises an interconnection network having fluid lines, fluid valves, one or more process parameter sensors, one or more pressure vessels, one or more fluid pumps, one or more fluid sources, and/or one or more fluid drains connected to the chamber housing by being connected to at least one inlet and to at least one outlet, wherein the programmable closed fluid processing system is programmed to completely fill an unpressurized chamber housing with the growth solution and to pressurize the chamber housing containing the growth solution after filling.
16. The apparatus of claim 15, wherein the wafer substrate holder is for engaging the drive mechanism via a drive arm connector or a drive arm rotor, the drive arm connector or drive arm rotor being structured to mate with the wafer substrate holder during a drive operation such that the wafer substrate holder is rotatable while the chamber housing remains stationary and is disengageable so as to allow the wafer substrate holder to be removed from the chamber housing.
17. The apparatus of claim 15, wherein the wafer substrate holder comprises the structure: wherein the wafer substrate holder is to be positioned within the chamber housing in a manner such that during rotation, the growth solution is capable of flowing within the chamber housing so as to contact the planar surface of the more than one wafer substrate and flow around and between wafer substrates in respective common planes in a manner consistent with relatively low temperature aqueous solution growth process specifications of selected process parameters for more than one common plane of more than one wafer substrate that are substantially parallel to each other.
18. The apparatus of claim 15, wherein growth solution is for being received in the chamber housing via one or more of the inlets and growth solution is for being discharged from the chamber housing via one or more of the outlets.
19. The apparatus of claim 15, wherein the chamber housing and the wafer substrate holder are formed from materials that are resistant to corrosion from exposure to growth solutions and/or resistant to contamination of the growth solutions.
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US15/099,580 US10407315B2 (en) 2016-04-14 2016-04-14 Method and/or system for synthesis of zinc oxide (ZnO)
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