CN109411464A - 一种基于快速烧结纳米银焊膏无压互连技术的1200v/50a igbt功率模块 - Google Patents
一种基于快速烧结纳米银焊膏无压互连技术的1200v/50a igbt功率模块 Download PDFInfo
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Abstract
本发明涉及一种基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块;底板材料为镀镍的厚铜块或AlSiC,在所述底板上反向放置两块同样电路样式的陶瓷覆铜DBC基板;基板之间通过连接桥连接;两组IGBT芯片和续流二极管芯片并联支路组与基板互连;采用双层印刷变温预热焊膏的方法,芯片与DBC基板之间通过连续脉冲电流辅助无压烧结纳米银焊膏实现瞬时连接;烧结连接时间不大于15秒;再通过引线键合,真空回流二次焊接,安装管壳,填充密闭剂制备IGBT模块。与同等级的商业IGBT模块相比,本发明的IGBT模块具有良好的电气性能,更低的热阻和更优的散热特性,同时具有优异的抗热循环疲劳老化能力。
Description
技术领域
本发明涉及一种基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块,属于功率电子器件封装技术领域。
背景技术
IGBT模块广泛应用于通信、计算机、消费电子、汽车电子、船舶驱动、航空航天、加工装备、国防军工等传统产业领域以及轨道交通、新能源、智能电网、新能源汽车等战略性新兴产业领域。IGBT以其驱动功率小、输入阻抗高、开关速度快、通态压降小、载流密度大、阻断电压高等特点,成为电力电子行业中的主要功率器件。采用IGBT进行功率变换,能够提高用电效率和质量,具有高效节能和绿色环保的特点,是解决能源短缺问题和降低碳排放的关键支撑技术,被称为功率变流产品的“CPU”、“绿色经济之核”。
以传统的1200V/50A IGBT功率模块为例,模块芯片封装使用焊料合金,经过回流,焊料完全溶解形成粘接。然而由于较低的熔点和工作温度(<300℃),传统焊料合金的使用将降低模块的可靠性,限制功率模块的高温工作能力。
纳米银焊膏具有熔点高(961℃)、导电、导热性能优好、绿色无铅等优点,适用于高温大功率和高密度封装,能提高功率模块高温服役的可靠性,成为IGBT功率模块高温应用的首选互连材料。
目前纳米银焊膏普遍采用热压烧结工艺,但是热压烧结工艺存在一些弊端:所需烧结时间较长(>1小时),工艺条件复杂,效率较低。施压定位夹具装置也不利于封装功率半导体器件自动化生产,施加的压力选取不当有可能对芯片造成永久性破坏。
发明内容
考虑到上述情况,本发明公开一种基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块,烧结连接过程无需额外施加辅助压力,仅在10s-15s即可完成电流辅助无压烧结纳米银焊膏,本发明的IGBT模块与同等级的1200V/50A商业IGBT模块相比,具有良好的电气性能,更低的热阻和更优的散热特性,具有优异的抗热循环疲劳老化能力,可靠性更优。
本发明采用的技术方案如下:
一种基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块;其特征是底板材料为镀镍的厚铜块或AlSiC,在所述底板上反向放置两块同样电路样式的陶瓷覆铜DBC基板;基板之间通过连接桥连接;两组IGBT芯片和续流二极管芯片并联支路组与基板互连;采用双层印刷变温预热焊膏的方法,芯片与DBC基板之间通过连续脉冲电流辅助无压烧结纳米银焊膏实现瞬时连接;烧结连接时间不大于15秒;再通过引线键合,真空回流二次焊接,安装管壳,填充密闭剂制备IGBT模块。
所述的IGBT芯片并联支路组,每块DBC基板上有若干IGBT芯片和续流二极管芯片并联;IGBT芯片与续流二极管芯片数量比为1:1;所述二极管芯片的阳极与其对应的IGBT芯片的发射极电气连接于同一个发射极汇流结构。
所述的双层印刷变温预热焊膏的方法是:第一步,在DBC基板待连接区域利用丝网印刷的方式印制一层30μm~40μm的单层纳米银焊膏,置于100℃~120℃加热装置中预热10min~20min,促使该单层纳米银焊膏中的有机溶剂在100℃~120℃充分挥发;第二步,再次利用丝网印刷的方式,在上述预干燥后的纳米银焊膏层再次印制一层30μm~40μm的纳米银焊膏,随后置于130℃~150℃加热装置中预热10min~20min。
所述的脉冲电流辅助无压快速烧结纳米银焊膏的连接过程,IGBT芯片和二极管芯片紧密贴装在预热完成的焊膏上,电极预压在DBC基板上,施加直流脉冲电流值为0.8kA~1.0kA,脉冲电流的占空比为75%~80%,电流导通时间为10s~15s。
具体说明如下:
本发明的一种基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块,模块底板材料为镀镍的厚铜块或AlSiC;在所述底板上反向放置两块同样电路样式的陶瓷覆铜(DBC)基板;基板之间通过连接桥连接;两组IGBT芯片和续流二极管芯片并联支路组与基板互连;芯片与DBC基板之间通过连续脉冲电流辅助无压烧结纳米银焊膏实现瞬时连接;烧结连接时间不大于15秒;与同等级的商业IGBT模块相比,本发明的IGBT模块具有良好的电气性能,更低的热阻和更优的散热特性,且封装工艺时间大幅缩短;由于烧结银互连层致密度高,使得该发明IGBT模块具有优异的抗热循环疲劳老化能力,可靠性更优。
所述的IGBT芯片并联支路组,每块DBC基板上有若干IGBT芯片和续流二极管芯片并联;IGBT芯片与续流二极管芯片数量比为1:1;所述二极管芯片的阳极与其对应的IGBT芯片的发射极电气连接于同一个发射极汇流结构。
所述的模块模块烧结连接过程无需额外施加辅助压力,仅在10s-15s即可完成电流辅助无压烧结纳米银焊膏,实现IGBT芯片/二极管芯片与DBC基板瞬间连接;采用双层印刷变温预热焊膏的方法,实现焊膏多步预干燥,可避免焊膏中有机溶剂在烧结过程中由于快速挥发或烧蚀产生显著应力,避免芯片互连层中存在大量气道,从而提高互连强度,降低接触电阻和热阻;该方法区别于通过施加显著辅助压力的传统烧结方法,可有效避免半导体芯片中晶体管单元受压预损坏的风险。
所述双层印刷变温预热焊膏的方法,先在DBC基板待连接区域利用丝网印刷的方式印制一层30μm~40μm的单层纳米银焊膏,置于100℃~120℃加热装置中预热10min~20min,促使该单层纳米银焊膏中的有机溶剂会在100℃~120℃充分挥发。随后利用丝网印刷的方式,在上述预干燥后的纳米银焊膏层再次印制一层30μm~40μm的纳米银焊膏,随后置于130℃~150℃加热装置中预热10min~20min;由于第一次印刷的焊膏经过预热有机物已充分挥发,且第二层纳米银焊膏覆盖在第一层纳米银焊膏后,焊膏层厚度也变为原来的两倍,为保证第二层焊膏与第一层焊膏充分润湿,应适度提高预热温度至130℃~150℃;但再次预热温度不能过高,应考虑避免过高温度导致预干燥期间焊膏中纳米银颗粒过度发生非致密性表面扩散行为,降低银颗粒烧结致密化的扩散驱动力,导致焊膏随后烧结温度时也无法获得较高的密度烧结银接头,降低芯片互连连接强度。
所述脉冲电流辅助无压快速烧结纳米银焊膏的瞬时连接方法,IGBT芯片和二极管芯片紧密贴装在预热完成的焊膏上,电极预压在DBC基板上,施加直流脉冲电流值优选为0.8kA~1.0kA,脉冲电流的占空比为75%~80%,电流导通时间优选为10s~15s。
与现有技术相比,本发明有以下优点:
本发明基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块,烧结连接过程无需额外施加辅助压力,仅在10s~15s即可完成电流辅助无压烧结纳米银焊膏,实现IGBT芯片/二极管芯片与DBC基板瞬间连接;采用双层印刷变温预热焊膏的方法,实现焊膏多步预干燥,可避免焊膏中有机溶剂在烧结过程中由于快速挥发或烧蚀产生显著应力,避免芯片互连层中存在大量气道,从而提高互连强度,降低接触电阻和热阻;该方法区别于通过施加显著辅助压力的传统烧结方法,可有效避免半导体芯片中晶体管单元受压预损坏的风险。与同等级的商业IGBT模块相比,本发明的IGBT模块具有良好的电气性能,更低的热阻和更优的散热特性,且封装工艺时间大幅缩短;由于烧结银互连层致密度高,使得该发明IGBT模块具有优异的抗热循环疲劳老化能力,可靠性更优。
附图说明
图1为本发明所用DBC基板。
图2为印有焊膏的基板示意图。
图3为本发明所用电流烧结电极示意图。
图4为未安装壳体的1200V/50A IGBT模块俯视结构示意图。
图5为安装壳体的1200V/50A IGBT模块结构示意图。
其中:1-下铜层、2-陶瓷、3-上铜层、4-纳米银焊膏、5-电极压头、6-IGBT芯片、7-二极管芯片、8-连接桥、9-引线、10-底板、11-管壳、12-电极端子。
具体实施方式
下面结合附图,对本发明的具体实施方式作详细说明。
一种基于快速烧结纳米银焊膏互连技术的1200V/50A IGBT功率模块,具体步骤如下:
步骤一:DBC基板超声清洗预处理。DBC基板如图1所示,首先使用无水酒精超声清洗DBC基板,通过物理震荡的方法去除基板表面可能存在的污染物颗粒,然后用氮***吹干DBC基板表面。
步骤二:印刷纳米银焊膏。首先在DBC基板待连接区域利用丝网印刷的方式印制一层30μm~40μm的单层纳米银焊膏,置于100℃~120℃加热装置中预热10min~20min,随后利用丝网印刷的方式,在上述预干燥后的纳米银焊膏层再次印制一层30μm~40μm的纳米银焊膏,随后置于130℃~150℃加热装置中预热10min~20min。印有焊膏的基板如图2所示。
步骤三:电流烧结。用贴片机将IGBT芯片6和二极管芯片7紧密贴装在预热完成的焊膏上,将电极预压在DBC基板上,与工件接触良好,施加0.8kA~1.0kA直流脉冲电流,脉冲电流的占空比为75%~80%,通电时间为10s~15s。如图3所示,当直流脉冲电流从其中一钨电极沿基板表面流至另一钨电极过程中,利用所产生的大量电阻热实现纳米银焊膏的快速烧结。
步骤四:引线键合。利用超声键合设备完成IGBT和续流二极管芯片与DBC基板电极区引线9键合,二极管芯片的阳极与其对应的IGBT芯片的发射极电气连接于同一个发射极汇流结构,完成引线键合的1200V/50A IGBT模块如图4所示。
步骤五:真空回流炉二次焊连接。将焊片放在底板10上,底板上反向放置两块同样电路样式的陶瓷覆铜(DBC)基板;基板之间通过连接桥连接;并用焊片将电极端子12和连接桥8的焊接面处包裹住并放在基板的电极焊接区上,然后将整个模块放进真空回流炉中完成真空回流焊接。
步骤六:安装外壳,涂胶封装。将管壳11安装到底板上并采用高温环氧树脂涂抹封装,在模块中填充抽真空的双组分硅胶密闭剂,放入真空干燥箱中,在120℃下保温1小时将硅胶固化,最后将电极12弯折成型,最终完成壳体安装的1200V/50A IGBT模块如图5所示。
实例1:对基于快速烧结纳米银焊膏互连技术的1200V/50A IGBT功率模块进行绝缘漏电测试,静态I-V特性,动态开关特性测试,与同等级商业模块漏电曲线基本吻合,具有同样良好的电气性能。
实例2:对基于快速烧结纳米银焊膏互连技术的1200V/50A IGBT功率模块进行热阻测试,与同等级商业模块相比,热阻降低12%,具有更好的散热特性,在相同负载的条件下,电流快速烧结纳米银焊膏制备的IGBT模块结温更低。
实例3:对基于快速烧结纳米银焊膏互连技术的1200V/50A IGBT功率模块进行高低温冲击老化和功率循环老化试验,同等级商业模块低经历500cycles老化后,模块失效。电流快速烧结纳米银焊膏制备的IGBT模块经历1000cycles的高低温老化冲击,其热阻并没有显著增加。同等级商业模块的寿命经历63K cycles时失效,电流快速烧结纳米银焊膏制备的IGBT模块的寿命为80K cycles。
本发明基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块,烧结连接过程无需额外施加辅助压力,仅在10s~15s即可完成电流辅助无压烧结纳米银焊膏,与同等级的商业IGBT模块相比,本发明的IGBT模块具有良好的电气性能,更低的热阻和更优的散热特性,且封装工艺时间大幅缩短;由于烧结银互连层致密度高,使得该发明IGBT模块具有优异的抗热循环疲劳老化能力,可靠性更优,具有很高的推广价值。
Claims (4)
1.一种基于快速烧结纳米银焊膏无压互连技术的1200V/50A IGBT功率模块;其特征是底板材料为镀镍的厚铜块或AlSiC,在所述底板上反向放置两块同样电路样式的陶瓷覆铜DBC基板;基板之间通过连接桥连接;两组IGBT芯片和续流二极管芯片并联支路组与基板互连;采用双层印刷变温预热焊膏的方法,芯片与DBC基板之间通过连续脉冲电流辅助无压烧结纳米银焊膏实现瞬时连接;烧结连接时间不大于15秒;再通过引线键合,真空回流二次焊接,安装管壳,填充密闭剂制备IGBT模块。
2.如权利要求1所的模块;其特征是所述的IGBT芯片并联支路组,每块DBC基板上有若干IGBT芯片和续流二极管芯片并联;IGBT芯片与续流二极管芯片数量比为1:1;所述二极管芯片的阳极与其对应的IGBT芯片的发射极电气连接于同一个发射极汇流结构。
3.如权利要求1所的模块;其特征是所述的双层印刷变温预热焊膏的方法是:第一步,在DBC基板待连接区域利用丝网印刷的方式印制一层30μm~40μm的单层纳米银焊膏,置于100℃~120℃加热装置中预热10min~20min,促使该单层纳米银焊膏中的有机溶剂在100℃~120℃充分挥发;第二步,再次利用丝网印刷的方式,在上述预干燥后的纳米银焊膏层再次印制一层30μm~40μm的纳米银焊膏,随后置于130℃~150℃加热装置中预热10min~20min。
4.如权利要求1所的模块;其特征是所述的脉冲电流辅助无压快速烧结纳米银焊膏的连接过程,IGBT芯片和二极管芯片紧密贴装在预热完成的焊膏上,电极预压在DBC基板上,施加直流脉冲电流值为0.8kA~1.0kA,脉冲电流的占空比为75%~80%,电流导通时间为10s~15s。
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