CN109400178B - Chip ceramic antenna and preparation method thereof - Google Patents
Chip ceramic antenna and preparation method thereof Download PDFInfo
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- CN109400178B CN109400178B CN201811427474.9A CN201811427474A CN109400178B CN 109400178 B CN109400178 B CN 109400178B CN 201811427474 A CN201811427474 A CN 201811427474A CN 109400178 B CN109400178 B CN 109400178B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 87
- 238000002360 preparation method Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 229
- 239000002184 metal Substances 0.000 claims abstract description 229
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 15
- 239000011651 chromium Substances 0.000 claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 238000009713 electroplating Methods 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 235000015895 biscuits Nutrition 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 6
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 4
- 238000010345 tape casting Methods 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000292 calcium oxide Substances 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000000047 product Substances 0.000 claims 2
- 239000011265 semifinished product Substances 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052709 silver Inorganic materials 0.000 abstract description 13
- 239000004332 silver Substances 0.000 abstract description 13
- 229910017052 cobalt Inorganic materials 0.000 abstract description 9
- 239000010941 cobalt Substances 0.000 abstract description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052742 iron Inorganic materials 0.000 abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011733 molybdenum Substances 0.000 abstract description 8
- 239000007769 metal material Substances 0.000 abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 7
- 229910052697 platinum Inorganic materials 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 3
- 238000010344 co-firing Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 24
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
Abstract
The invention discloses a chip ceramic antenna, wherein a metal circuit is attached to the outer surface of a ceramic base and a via hole position arranged on the ceramic base, wherein the metal circuit positioned on the outer surface is used as a ceramic antenna main body, and the metal circuit positioned on the via hole is used as a circuit to conduct; the metal circuit comprises a first metal circuit, a second metal circuit, a third metal circuit, a fourth metal circuit and a fifth metal circuit; the first metal circuit is selected from high temperature resistant tungsten, molybdenum and platinum, the third metal circuit is selected from copper, silver, chromium, iron and cobalt with high conductivity, the second metal circuit is arranged in the middle for transition, and the fourth metal circuit and the fifth metal circuit are arranged on the outer layer for protection and welding. The chip ceramic antenna can use the co-firing process of the ceramic base and the metal circuit by designing the multilayer metal circuit, thereby controlling the cost, and can also adopt the metal material with excellent conductivity, thereby ensuring the antenna performance.
Description
Technical Field
The invention belongs to the technical field of ceramic antennas, and particularly relates to a structural design of a chip ceramic antenna and a preparation method thereof.
Background
Although the option of using ceramics as antenna bases is common to those skilled in the art, problems remain to be solved. For example, the variety of ceramics commonly used is very rich, and it is obviously more preferable to select materials with low cost, such as zirconia, alumina and other common high-temperature sintered ceramics. And then preparing a metal circuit on the zirconia and alumina bases by a proper preparation method, wherein the metal circuit is used as a main body of the antenna. In various preparation methods, the metal circuit and the ceramic matrix are subjected to high-temperature sintering together by using a cofiring process, so that excellent interface combination between the metal circuit and the ceramic matrix is ensured, and meanwhile, the cost can be controlled. However, the sintering temperature of zirconia and alumina is often higher than 1400 ℃, and the material of the metal circuit capable of withstanding such high temperature is greatly limited, and few metal materials such as tungsten, platinum, molybdenum and the like can be selected. However, among these metals, tungsten and molybdenum are limited by the metal materials for antennas, such as copper and silver, which have conductivity significantly lower than that of the conventional metals, and platinum is limited by cost factors, and is not suitable for the preparation of antennas directly, and the defects must be overcome by optimizing structural design and improving the preparation method.
In addition, the thermal expansion coefficients of metals such as tungsten, molybdenum, platinum and the like are very different from those of copper and silver, and if the metals such as tungsten, molybdenum, platinum, copper, silver and the like are mixed and utilized, the problem of matching between different metal layers must be considered, otherwise, it is difficult to obtain a product with excellent interface bonding.
In order to obtain an antenna product with excellent performance, even if metal materials (such as copper and silver) with excellent conductivity are selected, the metal layer must be ensured to reach a sufficient thickness. General experience has shown that as the thickness of the metal layer increases, the more severe the differences between the different metal layers, the more likely the interlayer separation occurs, and excellent interfacial bonding is not obtained. Therefore, this problem is also solved when different metal layers are mixed and utilized.
Disclosure of Invention
In order to solve the problems, the invention provides a chip ceramic antenna and a preparation method thereof, and the chip ceramic antenna can use a co-firing process of a ceramic base and a metal circuit by designing a plurality of layers of metal circuits, thereby controlling the cost and adopting a metal material with excellent conductivity so as to ensure the performance of the antenna.
The technical scheme of the invention is as follows:
a chip type ceramic antenna comprises a ceramic base and a metal circuit, wherein
The ceramic base is made of any one or a combination of more of aluminum oxide, zirconium oxide, calcium oxide, magnesium oxide, hafnium oxide, cerium oxide, iron oxide, strontium oxide, barium oxide, silicon oxide, copper oxide, cobalt oxide, nickel oxide, scandium oxide and titanium oxide;
the metal circuit is attached to the outer surface of the ceramic base and a via hole position arranged on the ceramic base, wherein the metal circuit positioned on the outer surface serves as a ceramic antenna main body, and the metal circuit positioned on the via hole serves as a circuit to conduct;
the metal circuit is provided with a multilayer structure, and the multilayer structure is sequentially provided with a first metal circuit, a second metal circuit, a third metal circuit, a fourth metal circuit and a fifth metal circuit according to the distance from the ceramic base;
the material of the first metal circuit is one or more of tungsten, molybdenum and platinum, and the thickness of the first metal circuit is 0.1um-2um;
the material of the second metal circuit is selected from any one or more of nickel, chromium, cobalt and iron, and the thickness of the second metal circuit is 0.1um-2um;
the material of the third metal circuit is preferably any one or more of copper, silver, chromium, iron and cobalt, and the thickness of the third metal circuit is 10um-36um;
the material of the fourth metal circuit is selected from any one or more of nickel, copper, silver, chromium, iron, cobalt and gold, and the thickness of the fourth metal circuit is 2um-6um;
the fifth metal circuit is preferably made of one or more of nickel, copper, silver, chromium, iron, cobalt and gold, and the thickness of the fifth metal circuit is 0.04um-0.1um.
Preferably, the material of the first metal line is tungsten.
Preferably, the third metal line is made of copper.
Preferably, the material of the second metal circuit is selected from any one of nickel and chromium.
Preferably, the fourth metal wire is made of nickel, and the fifth metal wire is made of gold.
The invention also provides a preparation method of the chip ceramic antenna, which comprises the following steps:
s1) preparing a biscuit of the ceramic base by using a tape casting forming, punching process and cutting process according to the material and size requirements of the ceramic base;
s2) printing the first metal circuit on the biscuit of the S1 by utilizing a screen printing process according to the material and thickness requirements of the first metal circuit, and sintering to obtain the ceramic base attached with the first metal circuit;
s3) preparing the second metal circuit on the surface of the first metal circuit in S2 by utilizing any one of chemical vapor deposition, magnetron sputtering, electron beam evaporation deposition, electroplating and chemical plating processes according to the material and thickness requirements of the second metal circuit;
s4) preparing the third metal circuit on the surface of the second metal circuit in S3 by using any one of electroplating and chemical plating processes according to the material of the third metal circuit, and controlling the thickness range of the third metal circuit to be 0.1um-5um to obtain a semi-finished ceramic antenna product;
s5) annealing the semi-finished ceramic antenna product obtained in the step S4;
s6) repeating the steps S4 to S5 until the total thickness requirement of the third metal circuit is met;
s7) preparing the fourth metal circuit on the surface of the third metal circuit in S6 by utilizing any one of electroplating and chemical plating processes according to the material and thickness requirements of the fourth metal circuit;
s8) preparing the fifth metal circuit on the surface of the fourth metal circuit by any one of electroplating and chemical plating processes according to the material and thickness requirements of the fifth metal circuit, and finally obtaining the finished product of the chip ceramic antenna.
Preferably, the sintering in the step S2 is performed in an air atmosphere at a temperature of 800-1700 ℃.
Preferably, the annealing in the step S5 is performed in a non-oxidizing atmosphere at a temperature of 200-850 ℃ for 30min-2h.
Preferably, the annealing in the step S5 is performed in a neutral atmosphere or a reducing atmosphere, and the oxygen content in the atmosphere is less than 500ppm.
Compared with the prior art, the invention has the following beneficial effects:
1) Through designing multilayer metal circuit for chip ceramic antenna both can use ceramic base and metal circuit cofiring technology, and first metal circuit and ceramic cofiring, its cohesion is better, but also cost control, and can adopt the metal material that conductivity is better on first metal circuit, thereby guarantee antenna performance.
2) By designing a plurality of layers of metal lines, the metal material of each layer is optimized, so that excellent interface combination among the layers is ensured. For example, the first metal wire is preferably tungsten co-fired with the ceramic base, the coefficient of thermal expansion of tungsten is only 4.5-4.6, the third metal wire is preferably copper or silver with excellent conductivity, but the coefficient of thermal expansion of copper and silver is as high as 18-19.5, the difference between the two layers of metal wires is huge, and the method cannot be successfully applied to antenna products simply without optimization in structure and process; meanwhile, the patent also designs a second metal circuit between the first metal circuit and the second metal circuit, wherein the second metal circuit is preferably chromium or nickel, the thermal expansion coefficient of the chromium or nickel is 6.2-13, and the second metal circuit and the third metal circuit are arranged between the first metal circuit and the third metal circuit and can play the role of a transition layer. The existence of the second metal circuit ensures the interface combination between the layers.
3) By optimizing the thickness requirement of each layer of metal circuit, the proportion of the metal circuit with excellent conductivity is improved as much as possible on the premise of ensuring excellent interface combination between each layer of metal circuit and the ceramic matrix, so that the conductivity of the whole metal circuit is ensured, and the expectation of excellent antenna performance can be obtained only in this way. However, a new problem arises in that, due to the excessive thickness requirement differences between the layers of metal lines, this amplifies the differences between the layers of metal lines and also increases the risk of product failure. For example, in the solution provided in this patent, the thickness requirement of the third metal line significantly exceeds that of the other metal lines, and the invention optimizes the preparation method, specifically, by preparing the relatively thin third metal line once, then placing the sample in a non-oxidizing atmosphere for high temperature annealing for a period of time, thereby ensuring interface bonding, repeating the steps, and finally achieving the thickness requirement of the third metal line by a gradual thickening method.
4) This patent has still designed fourth metal wire way and fifth metal wire way, can play the guard action to third metal wire way, has avoided by the air oxidation, has improved the life-span of antenna, and the on the other hand still can be convenient for with other component welding.
Of course, it is not necessary for any one product to practice the invention to achieve all of the advantages set forth above at the same time.
Drawings
Fig. 1 is a schematic structural view of a chip-type ceramic antenna according to the present invention;
fig. 2 is a schematic cross-sectional view of a chip ceramic antenna according to the present invention.
The marks in the figure: a. front side, back side, via, ceramic pedestal, metal line 3, first metal line 31, second metal line 32, third metal line 33, fourth metal line 34, and fifth metal line 35.
Detailed Description
The invention will be further illustrated with reference to specific examples. It should be understood that these examples are illustrative of the present invention and are not intended to limit the scope of the present invention. Modifications and adaptations of the invention will occur to those skilled in the art and are intended to be within the scope of the invention in practice.
The invention will be described in more detail below with reference to the accompanying drawings for better illustration of the invention.
A chip ceramic antenna, see fig. 1, 2, comprising a ceramic base, 2 and a metal track 3, wherein
The ceramic base 2 is made of any one or a combination of more of aluminum oxide, zirconium oxide, calcium oxide, magnesium oxide, hafnium oxide, cerium oxide, iron oxide, strontium oxide, barium oxide, silicon oxide, copper oxide, cobalt oxide, nickel oxide, scandium oxide and titanium oxide; the materials are common materials for ceramic bases in the field;
the ceramic base comprises a front surface a and a back surface b, and the metal circuit 3 is attached to the outer surface of the front surface a of the ceramic base 2 and the position of the through hole 1, wherein a metal circuit layer positioned on the outer surface is used as a ceramic antenna main body, and a metal circuit positioned on the through hole is used as a circuit conduction function;
the metal circuit 3 has a multi-layer structure, and is sequentially named as a first metal circuit 31, a second metal circuit 32, a third metal circuit 33, a fourth metal circuit 34 and a fifth metal circuit 35 according to the distance from the ceramic base;
the material of the first metal circuit 31 needs to be able to withstand high temperature and can be co-fired with a ceramic material, the material of the first metal circuit 31 is selected from one or more alloys of tungsten, molybdenum and platinum, and the thickness of the first metal circuit is 0.1um-2um;
the material of the second metal line 32 is selected from any one or more of nickel, chromium, cobalt and iron, and the thickness of the second metal line is 0.1um-2um;
the material of the third metal line 33 is preferably any one or more of copper, silver, chromium, iron and cobalt, and the thickness of the third metal line is 10um-36um; the third metal line is preferably made of a material having excellent conductivity;
the fourth metal line 34 is made of one or more of nickel, copper, silver, chromium, iron, cobalt and gold, and the thickness of the fourth metal line is 2um-6um;
the fifth metal line 35 is preferably made of any one or more of nickel, copper, silver, chromium, iron, cobalt, and gold, and has a thickness of 0.04um to 0.1um.
The preparation method of the chip ceramic antenna comprises the following steps:
s1) preparing a biscuit of the ceramic base by using a tape casting forming, punching process and cutting process according to the material and size requirements of the ceramic base;
s2) printing the first metal circuit on the biscuit of the S1 by utilizing a screen printing process according to the material and thickness requirements of the first metal circuit, and sintering to obtain the ceramic base attached with the first metal circuit;
s3) preparing the second metal circuit on the surface of the first metal circuit in S2 by utilizing any one of chemical vapor deposition, magnetron sputtering, electron beam evaporation deposition, electroplating and chemical plating processes according to the material and thickness requirements of the second metal circuit;
s4) preparing the third metal circuit on the surface of the second metal circuit in S3 by using any one of electroplating and chemical plating processes according to the material of the third metal circuit, and controlling the thickness range of the third metal circuit to be 0.1um-5um to obtain a semi-finished ceramic antenna product;
s5) annealing the semi-finished ceramic antenna product obtained in the step S4;
s6) repeating the steps S4 to S5 until the total thickness requirement of the third metal circuit is met;
s7) preparing the fourth metal circuit on the surface of the third metal circuit in S6 by utilizing any one of electroplating and chemical plating processes according to the material and thickness requirements of the fourth metal circuit;
s8) preparing the fifth metal circuit on the surface of the fourth metal circuit by any one of electroplating and chemical plating processes according to the material and thickness requirements of the fifth metal circuit, and finally obtaining the finished product of the chip ceramic antenna.
Example 1
A structural design of a chip ceramic antenna, as shown in fig. 1 and 2, comprises a ceramic base and a metal circuit:
wherein,
the ceramic base 2 is preferably made of alumina;
the metal circuit 3 is attached to the outer surface of the ceramic base 2 and the position of the via hole 1, wherein the metal circuit layer positioned on the outer surface is used as a ceramic antenna main body, and the metal circuit positioned on the via hole is used as a circuit conduction function;
the metal circuit 3 has a multi-layer structure, and is sequentially named as a first metal circuit 31, a second metal circuit 32, a third metal circuit 33, a fourth metal circuit 34 and a fifth metal circuit 35 according to the distance from the ceramic base;
the material of the first metal circuit 31 is preferably tungsten, and the thickness of the first metal circuit is preferably 1.5um;
the material of the second metal line 32 is preferably chromium, and the thickness of the second metal line is preferably 0.5um;
the material of the third metal circuit 33 is preferably copper, and the thickness of the third metal circuit layer is preferably 18um;
the material of the fourth metal circuit 34 is preferably nickel, and the thickness of the fourth metal circuit is preferably 6um;
the fifth metal line 35 is preferably made of gold, and the thickness of the fifth metal line is preferably 0.05um.
Example 2
A method of making the chip ceramic antenna described in example 1. The method specifically comprises the following steps:
s1) preparing a biscuit of the ceramic base by using a tape casting forming, punching process and cutting process according to the material of the ceramic base, preferably alumina and the size requirement;
s2) printing a first metal circuit on a biscuit of the ceramic base in S1 by utilizing a screen printing process according to the requirement that the material of the first metal circuit is preferably tungsten and the thickness is 1.5um, and performing high-temperature sintering in an air environment, wherein the sintering temperature is 1650 ℃, and the heat preservation time is 2 hours;
s3) preparing a second metal circuit on the surface of the first metal circuit by utilizing a magnetron sputtering process according to the requirement that the material of the second metal circuit is preferably chromium and the thickness is 0.5um;
s4) preparing a third metal circuit on the surface of the second metal circuit by using an electroless plating process according to the requirement that the material of the third metal circuit is preferably copper and the total thickness is 18um, and controlling the thickness range of the third metal circuit to be 3-5um to obtain a semi-finished ceramic antenna product;
s5) putting the semi-finished ceramic antenna product of S4 into a mixed gas environment with 97mol percent of nitrogen and 3mol percent of hydrogen for high-temperature annealing, wherein the high-temperature annealing temperature is 700 ℃ and the time is 2 hours;
s6) repeating the steps from S4 to S5 for 5 times until the total thickness of the third metal circuit is 18um;
s7) preparing a fourth metal circuit on the surface of the third metal circuit by using an electroless plating process according to the requirement that the material of the fourth metal circuit is preferably nickel and the thickness is 6um;
s8) preparing a fifth metal circuit on the surface of the fourth metal circuit by using an electroless plating process according to the requirement that the material of the fifth metal circuit is preferably gold and the thickness is 0.05um, and finally obtaining the finished product of the ceramic antenna.
Comparative example
The second layer material of example 1 was selected as copper, and the first metal line was directly plated with copper using a conventional electroless plating, electroplating, etc. process in the art, and delamination was visible to the naked eye. Copper is poor in interface combination with tungsten, molybdenum and platinum, and the second metal circuit is adopted as a transition layer, so that interface combination among layers is guaranteed.
The preferred embodiments of the invention disclosed above are intended only to assist in the explanation of the invention. The preferred embodiments are not exhaustive or to limit the invention to the precise form disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand and utilize the invention. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (4)
1. A chip ceramic antenna comprises a ceramic base and a metal circuit, and is characterized in that,
the ceramic base is made of any one or a combination of more of aluminum oxide, zirconium oxide, calcium oxide, magnesium oxide, hafnium oxide, cerium oxide, iron oxide, strontium oxide, barium oxide, silicon oxide, copper oxide, cobalt oxide, nickel oxide, scandium oxide and titanium oxide;
the metal circuit is attached to the outer surface of the ceramic base and a via hole position arranged on the ceramic base, wherein the metal circuit positioned on the outer surface serves as a ceramic antenna main body, and the metal circuit positioned on the via hole serves as a circuit to conduct;
the metal circuit is provided with a multilayer structure, and the multilayer structure is sequentially provided with a first metal circuit, a second metal circuit, a third metal circuit, a fourth metal circuit and a fifth metal circuit according to the distance from the ceramic base;
the first metal circuit is made of tungsten, and the thickness of the first metal circuit is 0.1-2 mu m;
the material of the second metal circuit is selected from one or more of nickel and chromium, and the thickness of the second metal circuit is 0.1-2 mu m;
the third metal circuit is made of copper, and the thickness of the third metal circuit is 10-36 mu m;
the material of the fourth metal circuit is nickel, and the thickness of the fourth metal circuit is 2-6 mu m;
the fifth metal circuit is made of gold, and the thickness of the fifth metal circuit is 0.04-0.1 mu m;
the first metal circuit is attached to the ceramic base, printed on a biscuit of the ceramic base by using a screen printing process, and then sintered together with the biscuit of the ceramic base;
the third metal line is obtained by the following preparation method:
preparing on the surface of a second metal circuit by using any one of electroplating and chemical plating processes, controlling the thickness range of the third metal circuit to be between 0.1 mu m and 5 mu m, then annealing in a non-oxidizing atmosphere at the annealing temperature of 200-850 ℃ for 30min-2h to obtain a semi-finished product, and repeating electroplating or chemical plating on the surface of the semi-finished product until the material of the third metal circuit reaches the total thickness requirement of the third metal circuit.
2. A method of manufacturing the chip ceramic antenna according to claim 1, comprising the steps of:
s1) preparing a biscuit of the ceramic base by using a tape casting forming, punching process and cutting process according to the material and size requirements of the ceramic base;
s2) printing the first metal circuit on the biscuit of the S1 by utilizing a screen printing process according to the material and thickness requirements of the first metal circuit, and sintering to obtain the ceramic base attached with the first metal circuit;
s3) preparing the second metal circuit on the surface of the first metal circuit in S2 by utilizing any one of chemical vapor deposition, magnetron sputtering, electron beam evaporation deposition, electroplating and chemical plating processes according to the material and thickness requirements of the second metal circuit;
s4) preparing the third metal circuit on the surface of the second metal circuit in S3 by using any one of electroplating and chemical plating processes according to the material of the third metal circuit, and controlling the thickness range of the third metal circuit to be 0.1-5 mu m to obtain a semi-finished ceramic antenna;
s5) annealing the semi-finished ceramic antenna product in the S4 in a non-oxidizing atmosphere, wherein the annealing temperature is 200-850 ℃ and the annealing time is 30min-2h;
s6) repeating the steps S4 to S5 until the total thickness requirement of the third metal circuit is met;
s7) preparing the fourth metal circuit on the surface of the third metal circuit in S6 by utilizing any one of electroplating and chemical plating processes according to the material and thickness requirements of the fourth metal circuit;
s8) preparing the fifth metal circuit on the surface of the fourth metal circuit by any one of electroplating and chemical plating processes according to the material and thickness requirements of the fifth metal circuit, and finally obtaining the finished product of the chip ceramic antenna.
3. The method of manufacturing a chip ceramic antenna according to claim 2, wherein the sintering in step S2 is performed in an air atmosphere at a temperature of 800 ℃ to 1700 ℃.
4. The method of manufacturing a chip ceramic antenna according to claim 2, wherein the annealing in step S5 is performed in a neutral atmosphere or a reducing atmosphere, and the oxygen content in the atmosphere is less than 500ppm.
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