CN109360784A - A method of removal chip surface Pyrex - Google Patents
A method of removal chip surface Pyrex Download PDFInfo
- Publication number
- CN109360784A CN109360784A CN201811066692.4A CN201811066692A CN109360784A CN 109360784 A CN109360784 A CN 109360784A CN 201811066692 A CN201811066692 A CN 201811066692A CN 109360784 A CN109360784 A CN 109360784A
- Authority
- CN
- China
- Prior art keywords
- pyrex
- chip
- chip surface
- solution
- znso4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000005297 pyrex Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004411 aluminium Substances 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims abstract description 10
- 229910000368 zinc sulfate Inorganic materials 0.000 claims abstract description 10
- 239000011686 zinc sulphate Substances 0.000 claims abstract description 10
- 235000009529 zinc sulphate Nutrition 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003792 electrolyte Substances 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 230000036647 reaction Effects 0.000 claims abstract description 5
- 238000007654 immersion Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000006378 damage Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 206010013496 Disturbance in attention Diseases 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 206010061245 Internal injury Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
The present invention provides a kind of method for removing chip surface Pyrex, chip surface Pyrex are removed using bipolar electric solution, electrolyte uses ZnSO4 solution, DC source anode connects two aluminium wires, DC source cathode connects a copper rod, chip P is placed in electrolyte up, two aluminium wire bottoms of P face contact；After cell reaction, chip is taken out after immersing the immersion of HF solution 10-15 minutes, rinsed well with clear water.The present invention replaces traditional sand-blast using bieletrolysis technology generations, removes the Pyrex of chip surface, reduces the damage to chip, reduce wafer stress, overcome lattice defect, improves diode electrical property ability；Production cost can be reduced simultaneously, production production capacity can be improved.
Description
Technical field
The present invention relates to chip manufacture technical field, its surface is attached to during especially a kind of removal chip manufacture
The method of Pyrex.
Background technique
It during chip manufacture, needs to carry out boron phosphorus diffusion, forms PN junction.When being diffused process, boron member will be contained
The paper source (diboron trioxide) of element is covered on wafer surface, diboron trioxide and pasc reaction, forms pure boron (B2O3 + Si →
SiO2+ B), molecular motion makes a part of boron simple substance diffuse into silicon layer under high temperature, forms the face P；But during this, three oxygen
Pyrex (B2O3) a (SiO2) b, such as Fig. 1 can be formed in chip surface in conjunction with the silica that reaction generates by changing two boron
It is shown.This layer of Pyrex play the benefit that lattice impurity is precipitated to diffusion, but will affect subsequent handling, so must go
It removes.
In the prior art, the method that chip surface Pyrex are removed after diffusion is sand-blast, and quartz sand high speed is sprayed
To wafer surface, to remove the Pyrex after diffusion.Quartz sand high-speed impact silicon wafer causes mechanical damage in silicon chip surface,
Almost unlimited vacancy source, using high temperature process, these vacancy absorb impurity, bring serious internal injury to diode.It blows
Chip after sand produces many deep energy level complex centres, and base area minority carrier life time substantially reduces.It solves the problems, such as this mainly and has and is following
Three kinds of approach: 1. reduce silicon wafer damage by reducing the method for blast dynamics;2. by carrying out oxidation processes to silicon wafer, then
The Pyrex on silicon wafer surface layer are eroded using HF solution, but its CT Cycle Time is long, it is at high cost, and will cause diffusion table
Face concentration loss；3. chemical corrosion method, using the Pyrex on the mixed acid of nitric acid and hydrofluoric acid removal silicon wafer surface layer, but equally
The problem of there are the corrosion of phosphorus face excessively, leads to phosphorus face concentration loss.
Summary of the invention
In view of the above-mentioned problems, the present invention provides a kind of simple processes, removal chip surface Pyrex easy to control
Method, the method production capacity is high, hurts to chip without any damage.
A method of removal chip surface Pyrex remove chip surface Pyrex, electricity using bipolar electric solution
It solves liquid and uses ZnSO4 solution, DC source anode connects two aluminium wires, and DC source cathode connects a copper rod, and chip P is put up
It is placed in electrolyte, two aluminium wire bottoms of P face contact.
Further, at two aluminium wire contact chip both ends a quarters.
Further, DC source voltage 10-30V, electric current 1-2A.
Further, the mass ratio of the ZnSO4 solution is deionized water: ZnSO4=5:1.
Further, after cell reaction, chip is taken out after immersing the immersion of HF solution 10-15 minutes, is rushed with clear water
Wash clean.
Beneficial effects of the present invention: traditional sand-blast is replaced using bieletrolysis technology generations, removes the borosilicate glass of chip surface
Glass reduces the damage to chip, reduces wafer stress, overcomes lattice defect, improves diode electrical property ability；Simultaneously
Production cost can be reduced, production production capacity can be improved.
Detailed description of the invention
Fig. 1 is the schematic diagram that chip surface adheres to Pyrex；
Fig. 2 is the schematic diagram that electrolysis method removes surface Pyrex.
Specific embodiment
Technical scheme in the embodiment of the invention is clearly and completely described with reference to the accompanying drawing, it is clear that described
Embodiment be only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ability
Domain those of ordinary skill every other embodiment obtained, shall fall within the protection scope of the present invention.
Embodiment 1
Referring to shown in Fig. 2, electrolytic cell is provided with ZnSO4 solution, and the mass ratio of ZnSO4 solution is deionized water: ZnSO4=5:1；
DC source anode connects two aluminium wires, and DC source cathode connects a copper rod, and chip P is placed in electrolyte up, and the face P connects
It touches two aluminium wire bottoms, at two aluminium wire contact chip both ends a quarters, forms bieletrolysis end.
DC source voltage is adjusted to 10-30V, electric current 1-2A, chip surface bubble, Pyrex take off gradually,
Expose blue silicon wafer, sustained response is until electric current is reduced to zero (current values can be read with ammeter)；Cell reaction terminates
Afterwards, chip is taken out after immersing the immersion of HF solution 10-15 minutes, is rinsed well with clear water.
The principle reaction equation of electrochemical means removal Pyrex:
Cathode: Zn2++2e- -- → Zn phenomenon: zinc is precipitated on copper rod surface
Anode: 4OH--4e- --→ 2H2O+O2Phenomenon: chip surface has bubble generation
During cell reaction, anode generate high oxidative oxygen, it in Pyrex B and Si react generation B2O3 and
SiO2。
4B + 3O2 --→ 2B2O3
Si + O2 --→ SiO2
The oxide of chip HF acid rinse after reaction, generation is removed, and the Pyrex of chip surface are to be gone
It removes.
Finally, it should also be noted that listed above is only a specific embodiment of the invention.Obviously, the present invention is unlimited
In above embodiments, acceptable there are many deformations.Those skilled in the art can directly lead from present disclosure
Out or all deformations for associating, it is considered as protection scope of the present invention.
Claims (5)
1. a kind of method for removing chip surface Pyrex, which is characterized in that remove chip surface boron using bipolar electric solution
Silica glass, electrolyte use ZnSO4 solution, and DC source anode connects two aluminium wires, and DC source cathode connects a copper rod, chip
P is placed in electrolyte up, two aluminium wire bottoms of P face contact.
2. the method for removal chip surface Pyrex according to claim 1, which is characterized in that cell reaction terminates
Afterwards, chip is taken out after immersing the immersion of HF solution 10-15 minutes, is rinsed well with clear water.
3. the method for removal chip surface Pyrex according to claim 2, which is characterized in that two aluminium wires contact core
At a quarter of piece both ends.
4. the method for removal chip surface Pyrex according to claim 3, which is characterized in that DC source voltage 10-
30V, electric current 1-2A.
5. the method for removal chip surface Pyrex according to any one of claims 1-4, which is characterized in that described
The mass ratio of ZnSO4 solution is deionized water: ZnSO4=5:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811066692.4A CN109360784A (en) | 2018-09-13 | 2018-09-13 | A method of removal chip surface Pyrex |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811066692.4A CN109360784A (en) | 2018-09-13 | 2018-09-13 | A method of removal chip surface Pyrex |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109360784A true CN109360784A (en) | 2019-02-19 |
Family
ID=65351051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811066692.4A Pending CN109360784A (en) | 2018-09-13 | 2018-09-13 | A method of removal chip surface Pyrex |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109360784A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1240003A (en) * | 1996-12-04 | 1999-12-29 | 金属股份有限公司 | Electrolytic cell with bipolar electrodes |
| JP3386163B2 (en) * | 1993-01-11 | 2003-03-17 | 川崎製鉄株式会社 | Purification method of metallic silicon |
| CN101281935A (en) * | 2008-05-20 | 2008-10-08 | 上海大学 | Method for measuring silicon solar cell junction depth |
| CN101622200A (en) * | 2007-03-20 | 2010-01-06 | 德诺拉工业有限公司 | Electrochemical cell and method for operating the same |
| CN201678748U (en) * | 2010-02-09 | 2010-12-22 | 姚尚龙 | Electrolysis part of electrolysis unit |
| CN102243984A (en) * | 2010-05-11 | 2011-11-16 | 扬州杰利半导体有限公司 | Method of removing boron spots on chip |
| CN104392899A (en) * | 2014-10-08 | 2015-03-04 | 程德明 | Sand-blasting-free diffusion nickel plating technology of rectification monocrystalline silicon wafer |
| CN204668279U (en) * | 2015-06-25 | 2015-09-23 | 朝阳无线电元件有限责任公司 | The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron |
-
2018
- 2018-09-13 CN CN201811066692.4A patent/CN109360784A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3386163B2 (en) * | 1993-01-11 | 2003-03-17 | 川崎製鉄株式会社 | Purification method of metallic silicon |
| CN1240003A (en) * | 1996-12-04 | 1999-12-29 | 金属股份有限公司 | Electrolytic cell with bipolar electrodes |
| CN101622200A (en) * | 2007-03-20 | 2010-01-06 | 德诺拉工业有限公司 | Electrochemical cell and method for operating the same |
| CN101281935A (en) * | 2008-05-20 | 2008-10-08 | 上海大学 | Method for measuring silicon solar cell junction depth |
| CN201678748U (en) * | 2010-02-09 | 2010-12-22 | 姚尚龙 | Electrolysis part of electrolysis unit |
| CN102243984A (en) * | 2010-05-11 | 2011-11-16 | 扬州杰利半导体有限公司 | Method of removing boron spots on chip |
| CN104392899A (en) * | 2014-10-08 | 2015-03-04 | 程德明 | Sand-blasting-free diffusion nickel plating technology of rectification monocrystalline silicon wafer |
| CN204668279U (en) * | 2015-06-25 | 2015-09-23 | 朝阳无线电元件有限责任公司 | The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron |
Non-Patent Citations (1)
| Title |
|---|
| 沈德荣: "《清除硅片表面磷硅、硼硅玻璃层的新方法》", 《半导体技术》 * |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190219 |
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