CN109346558A - Light transmission film solar chip and production method - Google Patents
Light transmission film solar chip and production method Download PDFInfo
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- CN109346558A CN109346558A CN201811181057.0A CN201811181057A CN109346558A CN 109346558 A CN109346558 A CN 109346558A CN 201811181057 A CN201811181057 A CN 201811181057A CN 109346558 A CN109346558 A CN 109346558A
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- film solar
- solar chip
- light transmission
- thin film
- etching
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 74
- 239000010408 film Substances 0.000 claims abstract description 69
- 238000005530 etching Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- 238000001039 wet etching Methods 0.000 claims description 12
- 238000011161 development Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000006748 scratching Methods 0.000 claims description 4
- 230000002393 scratching effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 12
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000011800 void material Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000005488 sandblasting Methods 0.000 description 7
- 238000005422 blasting Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RBORURQQJIQWBS-QVRNUERCSA-N (4ar,6r,7r,7as)-6-(6-amino-8-bromopurin-9-yl)-2-hydroxy-2-sulfanylidene-4a,6,7,7a-tetrahydro-4h-furo[3,2-d][1,3,2]dioxaphosphinin-7-ol Chemical compound C([C@H]1O2)OP(O)(=S)O[C@H]1[C@@H](O)[C@@H]2N1C(N=CN=C2N)=C2N=C1Br RBORURQQJIQWBS-QVRNUERCSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropyl acetate Chemical compound CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to solar chip preparation technical field, a kind of light transmission film solar chip and production method are disclosed, specifically, the described method includes: forming thin film solar chip on glass-base；Processing is performed etching to thin film solar chip, to form the light transmission gap for running through thin film solar chip.Since etching technics precision is high, so light-transmitting void can be made at the edge of sub- battery；Meanwhile etching technics can effectively control etching position, the case where sub- battery cannot connect can occur to avoid when processing light transmission gap.
Description
Technical field
The present invention relates to solar chip preparation technical fields, more particularly, to a kind of light transmission film solar chip and system
Make method.
Background technique
With the rise of solar energy clean energy resource, every technical advantage also starts to tilt to clean energy resource, and the film sun
A unexpected rival in clean energy resource can be become, long-range utilizability, spatter property, region broadness have made it cleaning energy
The new lover in source.Existing thin-film solar cells is frequently used on building, such as solar energy curtain wall, or is applied to all kinds of fingers
Show product, including all kinds of traffic lights, traffic sign and guide plate, doorplate etc..These, which are applied, is focusing on thin-film solar cells
While output performance, requirement also proposed to the translucency of thin-film solar cells, light transmission film solar chip is also met the tendency of
And it gives birth to.
The processing of current existing light transmission film solar chip be using ink combination blasting craft, light transmission film too
It is positive will to destroy hollow out among sub- battery that existing PN junction forms on chip, form light transmission gap.Wherein, thin film solar core
Usually multiple (usually 150) the sub- batteries of piece are connected in series, as shown in Figure 1, it brief shows three sub- batteries 6 '
Cascade, it (mainly includes cigs layer 2 ' and sulphur that every sub- battery 6 ', which includes preceding electrode 1 ' (main component is Mo molybdenum), PN junction,
Cadmium layer 3 ', wherein the main composition of cigs layer 2 ' has Cu copper, In indium, Ga gallium, Se selenium, abbreviation CIGS；The master of cadmium sulfide layer 3 '
Wanting ingredient is CdS cadmium sulfide) and back electrode 4 ' (main component is ZnO zinc oxide).Thin film solar core as shown in Figure 1
Piece, the region P3 be adjacent subcell 6 ' partition position namely the region P3 be adjacent subcell 6 ' boundary position；PN junction and
Back electrode 4 ' separates in the region P3, to form each sub- battery 6 '；The region P2 is the series connection area of each sub- battery 6 ', each height electricity
Pond 6 ' forms series connection by the region P2.What Fig. 2 was provided is the signal for the light transmission film solar chip that the prior art is process
Figure, the area B is the light transmission gap formed after sub- battery is destroyed back electrode, PN junction and preceding electrode by sandblasting, and the area A is light penetrating slit
Gap is connected the region between area with sub- battery.
The mode of existing ink and blasting craft processing light transmission film solar chip has the disadvantage in that
1. existing ink and sandblasting combined process, precision is not high, when often there is ink printing, pattern be printed on P2,
The position of P3 causes each battery position P2, P3 in sandblasting to be fanned the air, and each sub- battery cannot be connected, so that series connection cannot be formed
Structure reduces the generating efficiency of battery.
2. the position of the P3 of thin film solar battery core is fixed, and the width of P3 is smaller (general 50 ± 5 microns),
When carrying out blasting craft, it is often necessary to there is a distance (control in a distance) to carry out sandblasting hollow design from P3, to prevent
The area sandblasting Shi Jiang P2 fans the air, that is to say, that we cannot be by achieving the purpose that light transmission for the area the A broadening on the right side of P3.
3., can only be in sub- battery in order to avoid P2 is got through when using ink and blasting craft production transparent product
Intermediate sandblasting hollow out is to form light transmission gap B, and A area of this intermediate hollow out comparison directly on the right side of P3 carries out hollow out, and resistance is wanted
(being resistance according to R=ρ L/S, R, ρ is density of material, and L is length, and S is sectional area) greatly, then electronics, hole transfer when energy
Consume becomes larger, and influences the actually active power of battery.
Summary of the invention
The purpose of the present invention is to provide a kind of light transmission film solar chip production methods, to solve to deposit in the prior art
Light transmission film solar chip be only capable of processing light transmission gap at the intermediate position of sub- battery, light transmission gap Working position is limited
The technical issues of.
It is existing in the prior art to solve the object of the invention is also to provide a kind of light transmission film solar chip
Optical thin film solar chip is only capable of processing light transmission gap, the limited technology of light transmission gap Working position at the intermediate position of sub- battery
Problem.
Based on above-mentioned first purpose, the present invention provides a kind of light transmission film solar chip production method, the methods
It include: the formation thin film solar chip on glass-base；
Thin film solar chip is performed etching, to form the light transmission gap for running through thin film solar chip.
Further, the etching uses wet-etching technology.
Further, the wet-etching technology includes:
Photoresist is coated on thin film solar chip；
Partial exposure is carried out to the thin film solar chip for being coated with photoresist using mask plate, so that partial region
Photoetching adhesive curing；
Thin film solar chip after exposure is developed, to remove the photoresist in uncured region；
The thin film solar chip that development is completed is etched by etching liquid, to etch light transmission gap；
The solidification photoresist lift off on thin film solar chip that etching is completed.
Further, before coating photoresist on thin film solar chip, the wet-etching technology further include:
Thin film solar chip is cleaned and dried.
Further, it is etched in the thin film solar chip that described pair of development is completed by etching liquid, to etch light transmission
After gap, and before the solidification photoresist lift off on the thin film solar chip for completing etching, the wet process is carved
Etching technique further include:
The thin film solar chip completed to etching cleans.
Further, the wet-etching technology further include:
The thin film solar chip completed to removing cleans.
It is further, described the step of forming thin film solar chip on glass-base, comprising:
Conductive film is deposited on the glass substrate, electrode before being formed；
Laser burns are carried out to preceding electrode, form the preceding electrode of multiple sub- batteries；
Plural layers are precipitated on the front electrode, form PN junction layer；
Mechanical scratching is carried out to PN junction layer；
At least one layer of metal material is deposited on PN junction layer, forms back electrode；
Mechanical scribing is carried out to back electrode, the integrated circuit of internal series-connection is formed, to obtain thin film solar chip.
Based on above-mentioned second purpose, the present invention also provides a kind of light transmission film solar chips, and the light transmission film is too
Positive energy chip is made by light transmission film solar chip production method as described above.
Further, multiple light transmission gaps are provided on the light transmission film solar chip；
The shape in the light transmission gap is arc-shaped, round, oval and any one of rectangular.
Further, the light transmission film solar chip includes multiple is serially connected and side by side against the son electricity of setting
Pond, the light transmission gap is arranged in the middle part of sub- battery and/or the edge of sub- battery.
Compared with prior art, the invention has the benefit that
Light transmission film solar chip production method provided by the invention by being performed etching on thin film solar chip,
To obtain light transmission film solar chip, since etching precision is high, not only it can be processed into hollow out in the centre of sub- battery, with
Light transmission gap is formed, a part of sub- battery edge can also be processed into hollow out, to form light transmission gap；To so that thoroughly
The processing in the light transmission gap of optical thin film solar chip is no longer confined to the intermediate position of sub- battery, the Working position in light transmission gap
Selectivity is more compared with prior art；And it selects to compare existing skill when sub- battery edge position part processes light transmission gap
Art can also substantially reduce the resistance of battery；Further, etching technics precision is higher, solves in ink blasting craft, due to applying
Deposited deviation causes the series connection region of each sub- battery to be grit blasted technique to destroy, cause to be unable to asking for normally between each sub- battery
Topic.
Light transmission film solar chip provided by the invention its be by above-mentioned light transmission film solar chip production method
It is made, compared with prior art, shape and the regioselectivity multiplicity in light transmission gap, so as to select suitable location
Light transmission gap improve the generating efficiency of sub- battery to reduce the resistance of sub- battery.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the partial structural diagram of thin film solar chip；
Fig. 2 is the partial structural diagram for the light transmission film solar chip that the prior art completes the process
Fig. 3 is a kind of flow chart of implementation method of light transmission film of embodiment of the present invention solar chip production method；
Fig. 4 is the flow chart of another implementation method of light transmission film of embodiment of the present invention solar chip production method；
Fig. 5 is the state diagram of coating step in light transmission film of embodiment of the present invention solar chip production method；
Fig. 6 is the state diagram of step of exposure in light transmission film of embodiment of the present invention solar chip production method；
Fig. 7 is the state diagram of development step in light transmission film of embodiment of the present invention solar chip production method；
Fig. 8 is the state diagram of etch step in light transmission film of embodiment of the present invention solar chip production method；
Fig. 9 be formed after strip step in light transmission film of embodiment of the present invention solar chip production method the first thoroughly
The schematic diagram of optical thin film solar chip；
Figure 10 is second formed after strip step in light transmission film of embodiment of the present invention solar chip production method
The schematic diagram of light transmission film solar chip.
Icon: electrode before 1-；2-CIGS layers；3- cadmium sulfide layer；4- back electrode；5- glass substrate；6- battery；7- photoetching
Glue.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that such as occur term " center ", "upper", "lower", "left", "right",
"vertical", "horizontal", "inner", "outside" etc., the orientation or positional relationship of instruction are that orientation based on the figure or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, such as there is art
Language " first ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace such as occur
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.
The flow direction for the electronics that arrow in attached drawing indicates.
Referring to shown in Fig. 3 to Fig. 4, present embodiments providing a kind of light transmission film solar chip production method, comprising:
S100: thin film solar chip is formed on glass-base；
S200: performing etching thin film solar chip, to form the light transmission gap for running through thin film solar chip.Its
In, the etching includes wet etching and dry etching.
As a kind of implementation of the embodiment of the present invention, have in the step of forming thin film solar chip on glass-base
Body includes:
S101: depositing conductive film on a glass substrate 5, electrode 1 before being formed.Specifically, the method that magnetron sputtering can be used
Deposit conductive film on a glass substrate 5, electrode 1 before being formed, the main component of the preceding electrode 1 can be Mo (molybdenum), Al (aluminium),
Cu (copper) or Ag2One kind of O (silver oxide) etc..
S102: laser burns are carried out to preceding electrode 1, form the preceding electrode of multiple sub- batteries 6.
S103: precipitating plural layers on preceding electrode 1, forms PN junction layer；Plasma enhanced chemical gas specifically can be used
Mutually the method for deposition deposits plural layers on preceding electrode 1, and specific PN junction layer can be by the mixing of copper, indium, gallium and selenium
The vulcanization that CIGS (CIGS is copper, indium, gallium and the abbreviation of the selenium this field) layer 2 and CdS (cadmium sulfide) material that object is formed are formed
Cadmium layer 3, the two cooperatively forms.Wherein, CdS (cadmium sulfide) material is also possible to CdTe (cadmium telluride etc..
S104: mechanical scratching is carried out to PN junction layer.
S105: at least one layer of metal material is deposited on PN junction layer, forms back electrode 4.
Specifically, the method that physical vapour deposition (PVD) can be used is plated on PN junction layer sets one layer containing ZnO (zinc oxide) material
Metal material form, that is, back electrode 4 can be zinc oxide film；It should be noted that back electrode 4 can also use silver oxide
Equal materials, the general material with high conductivity.
S106: mechanical scratching is carried out to back electrode 4, the integrated circuit of internal series-connection is formed, to obtain thin film solar core
Piece.
Light transmission film solar chip production method of the embodiment of the present invention provides a kind of specific wet etching method, comprising:
S201: coating: photoresist 7 is coated on thin film solar chip, to form 7 layers of photoresist, specifically, can lead to
Cross the even spread photoresist 7 on thin film solar chip.Photoresist 7 at least can cover solar chip just in the step
Face, as shown in figure 5, photoresist 7 is coated in the surface and the region P3 of back electrode 4 in the present embodiment.
It is understood that the photoresist 7 of the present embodiment light transmission film solar chip production method can use positivity
Glue can also use negative photoresist.Different with the property of negative photoresist according to positive photoresist, the position of the loophole of mask plate is also different.Tool
Body, due to, positive photoresist is to certain solvents be it is insoluble, become soluble substance after illumination, it is described using positive photoresist when,
The loophole of mask plate should correspond to region to be etched；Negative photoresist is that insoluble material is formed after illumination, described using negative
Property glue when, the loophole of mask plate should correspond to non-region to be etched, that is, sub- battery 6 needs the region that retains.Specifically
, the positive photoresist containing Methylethyl acetate ingredient can be used in the photoresist 7 of the present embodiment.
S202: exposure: carrying out Partial exposure to the thin film solar chip for being coated with photoresist 7 using mask plate, with
Make the photoetching adhesive curing of partial region.The direction of illumination of light on specific mask plate is consistent with the arrow direction in Fig. 6, exposure mask
The top of arrow locations namely back electrode 4 in Fig. 6 is arranged in version.
It is understood that the cured region of photoresist 7 should be the region for not needing etching, photoresist 7 is solidificated in this
The metal layer of thin film solar chip below is protected on region.In the step, time of exposure is according to the property of photoresist 7
The thickness of matter and photoresist 7 is reasonably selected.
The shape of the loophole of specific mask plate can be set according to actual needs, can be round, rectangular, ellipse
The arbitrary shapes such as circle, arc, the light transmission gap etched accordingly can also be in arbitrary shape.
S203: development: the thin film solar chip after exposure is developed, to remove the photoresist 7 in uncured region；
Specifically, as shown in fig. 7, eliminating part photoresist 7 on the surface of the present embodiment back electrode 4.Specific development can by
It coats developer solution on thin film solar chip to complete, specific developer solution should can wash away uncured photoresist 7 and right
Cured photoresist 7 does not have an impact, and tetramethylammonium hydroxide, novolac resin, PAC can be selected in the present embodiment developer solution
The mixed liquor of (aluminium polychloride).
The effect of the step is to appear the region of uncured photoresist 7, to facilitate the etching to uncured region.
S204: the thin film solar chip completed to development performs etching, to etch light transmission gap.After the completion of etching
The state of thin film solar chip is as shown in figure 8, its position that will remove photoresist in Fig. 7, is sequentially etched and eliminates back electrode
4, cadmium sulfide layer 3, cigs layer 2 and preceding electrode 1, so as to form light transmission gap.
In the step, it can be by coating etching liquid on the thin film solar chip that development is completed, or will show
The thin film solar chip that shadow is completed, which is placed into etching liquid, performs etching completion.Etching liquid is according to each layer of thin film solar chip
Material reasonably selected, generally several mixtures in the substances such as sulfuric acid, nitric acid, hydrochloric acid, acetic acid, benzene.Etching
Time is also according to actually being reasonably selected.
S205: the solidification photoresist 7 on the thin film solar chip of etching completion is removed.
Wherein, the removing of cured photoresist 7 can be completed by coating stripper, and the selection of stripper should not
The material of thin film solar chip itself is damaged, but cured photoresist 7 can be removed.According to the property of photoresist 7,
The mixed solution of N-METHYLFORMAMIDE, diethylene glycol dimethyl ether and ammonium hydroxide can be used in general stripper.Meanwhile the step can also be with
Cured photoresist 7 is removed using the method for physics, such as the means such as laser.
What is provided in Fig. 9 is the schematic diagram for the solar energy film chip completed to Fig. 8 removing, completely remains sub- electricity
The region P2 (P2 is the region to form sub- 6 cascade of battery) in pond 6, is equivalent to and forms light transmission gap in the middle part of sub- battery 6,
The similar solar energy film chip being process with the prior art.Wherein, refer to sub- battery 6 far from itself P2 in the middle part of sub- battery
Region, and the part far from its region P3 (the partition position of adjacent subcell 6) between adjacent subcell 6.
Meanwhile the solar energy film chip that the present embodiment removing is completed can also be as shown in Figure 10, light transmission gap further includes
The a-quadrant of sub- battery edge namely its region P2 for eliminating part.The light transmission gap of the specific form is in step of exposure
In, the photoresist in 4 corresponding A region of back electrode should also be as be it is uncured, to facilitate the photoresist in the subsequent developing away region,
And it is provided safeguard for final etch step.Wherein, a-quadrant should gather the part region P2 and the region P3, a-quadrant can also
It is interpreted as 6 link position of adjacent subcell.Should it should be noted that when the marginal position of sub- battery 6 is arranged in light transmission gap,
It should be noted that the region P2 of sub- battery 6 cannot etch away completely, it can suitably retain a part, in order to each sub- formation of battery 6
Series connection.
It is understood that light transmission film solar chip production method of the embodiment of the present invention passes through in thin film solar core
On piece performs etching,, not only can be in sub- battery 6 since etching processing precision is high to obtain light transmission film solar chip
Centre be processed into hollow out, to form light transmission gap, a part in the area sub- battery edge P2 can also be processed into hollow out, with shape
At light transmission gap；To so that the processing in the light transmission gap of light transmission film solar chip is no longer confined to the centre of sub- battery 6
Position, selectivity is more compared with prior art for the Working position in light transmission gap；And it selects in positions parts such as the areas sub- battery 6A
When processing light transmission gap, the resistance of battery can also be substantially reduced compared with prior art；Further, etching processing precision is higher, solution
In ink blasting craft of having determined, destroys, cause between each sub- battery 6 since coating deviation causes the region P2, P3 to be grit blasted technique
The problem of normally.
Light transmission film solar chip production method of the embodiment of the present invention, further includes pretreated to thin film solar chip
Step: thin film solar chip is cleaned and is dried.
It is carried out specifically, the cleaning of thin film solar chip can be using deionized water, can be placed after the completion of cleaning
Constant temperature is dried in drying box.The effect of the step is the pollution impurity etc. removed on thin film solar chip, to improve
The adhesiveness of photoresist 7.
Light transmission film solar chip production method of the embodiment of the present invention, further comprise the steps of: to etching complete film too
Positive energy chip is cleaned.The effect of the step is to be removed the etching liquid on thin film solar chip, specifically can be with
By the way of deionized water cleaning.
After strip step, further comprises the steps of: the thin film solar chip completed to removing and clean.The work of the step
With being that residual photoresist or stripper etc. on the thin film solar chip for solidifying photoresist have been removed in removal, obtain clean saturating
Optical thin film solar chip.
Light transmission film solar energy core made from the light transmission film solar chip production method through the foregoing embodiment
Piece includes the thin film solar chip of glass substrate and setting on the glass substrate, and thin film solar chip includes multiple phases
Mutual concatenated sub- battery 6, the light transmission gap of light transmission film solar chip can be located at each sub- battery 6 intermediate position and/or
On the edge of each sub- battery 6, light transmission gap is arc, circle, ellipse and rectangular one kind.
In conclusion light transmission film solar chip production method of the embodiment of the present invention is carried out by the way of wet etching
The processing in light transmission gap, since the craft precision of wet etching is high, in this way, each progress of sub- battery 6 can not influenced as needed
In concatenated situation, light transmission gap optionally is processed at multiple positions of sub- battery 6, compared with prior art the shape of ink-jet sandblasting
Formula, machining accuracy is high and Working position selectivity is bigger；And light transmission gap can process compared with prior art width, length more
Greatly, with the translucency of enhanced film solar chip.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of light transmission film solar chip production method, which is characterized in that the described method includes:
Thin film solar chip is formed on glass-base；
Thin film solar chip is performed etching, to form the light transmission gap for running through thin film solar chip.
2. light transmission film solar chip production method according to claim 1, which is characterized in that the etching is using wet
Method etching technics.
3. light transmission film solar chip production method according to claim 2, which is characterized in that the wet etching work
Skill includes:
Photoresist is coated on thin film solar chip；
Partial exposure is carried out to the thin film solar chip for being coated with photoresist using mask plate, so that the photoetching of partial region
Adhesive curing；
Thin film solar chip after exposure is developed, to remove the photoresist in uncured region；
The thin film solar chip that development is completed is etched by etching liquid, to etch light transmission gap；
The solidification photoresist lift off on thin film solar chip that etching is completed.
4. light transmission film solar chip production method according to claim 3, which is characterized in that in thin film solar core
Before on piece coats photoresist, the wet-etching technology further include:
Thin film solar chip is cleaned and dried.
5. light transmission film solar chip production method according to claim 3, which is characterized in that developed at described Dui
At thin film solar chip by etching liquid etch, after etching light transmission gap, and it is described will etching complete it is thin
Before solidification photoresist lift off on film solar chip, the wet-etching technology further include:
The thin film solar chip completed to etching cleans.
6. light transmission film solar chip production method according to claim 3, which is characterized in that the wet etching work
Skill further include:
The thin film solar chip completed to removing cleans.
7. light transmission film solar chip production method according to claim 3, which is characterized in that described in glass-base
The step of upper formation thin film solar chip, comprising:
Conductive film is deposited on the glass substrate, electrode before being formed；
Laser burns are carried out to preceding electrode, form the preceding electrode of multiple sub- batteries；
Plural layers are precipitated on the front electrode, form PN junction layer；
Mechanical scratching is carried out to PN junction layer；
At least one layer of metal material is deposited on PN junction layer, forms back electrode；
Mechanical scribing is carried out to back electrode, the integrated circuit of internal series-connection is formed, to obtain thin film solar chip.
8. a kind of light transmission film solar chip, which is characterized in that the light transmission film solar chip passes through such as claim
The described in any item light transmission film solar chip production methods of 1-7 are made.
9. light transmission film solar chip according to claim 8, which is characterized in that the light transmission film solar chip
On be provided with multiple light transmission gaps；
The shape in the light transmission gap is arc-shaped, round, oval and any one of rectangular.
10. light transmission film solar chip according to claim 9, which is characterized in that the light transmission film solar energy core
Piece includes multiple sub- batteries being serially connected and abut setting side by side, and the light transmission gap is arranged in the middle part of sub- battery and/or son
The edge of battery.
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| CN113937191A (en) * | 2021-12-16 | 2022-01-14 | 中国华能集团清洁能源技术研究院有限公司 | Method for manufacturing device |
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Application publication date: 20190215 |