CN109343166A - Micro- polarization chip arrays based on multi-walled carbon nanotube and preparation method thereof - Google Patents
Micro- polarization chip arrays based on multi-walled carbon nanotube and preparation method thereof Download PDFInfo
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- CN109343166A CN109343166A CN201811481519.0A CN201811481519A CN109343166A CN 109343166 A CN109343166 A CN 109343166A CN 201811481519 A CN201811481519 A CN 201811481519A CN 109343166 A CN109343166 A CN 109343166A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
Abstract
The invention discloses a kind of micro- polarization chip arrays and preparation method thereof based on multi-walled carbon nanotube, method includes: production catalyst array;Sheet array of multi-walled carbon nanotubes is grown on catalyst array;By the sheet array of multi-walled carbon nanotubes fell the formation in substrate densification multi-wall carbon nano-tube film array;The multi-wall carbon nano-tube film array is etched, micro- polarization chip arrays in one of direction are obtained;Aforesaid operations are repeated, make the polarization chip arrays of four direction respectively.The problem of present invention utilizes the polarization characteristic of in-line arrangement carbon nano-tube film, and prior art complexity can effectively be solved by being made into micro- polarization unit, at high cost, low efficiency.
Description
Technical field
The present invention relates to measuring polarization state field technical field more particularly to a kind of micro- polarizations based on multi-walled carbon nanotube
Chip arrays and preparation method thereof.
Background technique
Existing micro- polarization arrays mostly use greatly the scheme of wire grating, the nano level metal wiregrating period, line width to technique,
Equipment requirement is higher, is differed according to the polarization requirements period at tens nanometers to a few micrometers.Carbon nanotube is a kind of one-dimensional carbon nanometer
Material has excellent mechanics, electric property.The diameter of multi-walled carbon nanotube only has 2-20 ran.Relative to traditional gold
The periodic dimensions for belonging to wiregrating are smaller.In the substrate for being deposited with catalyst, it can be grown using the method for chemical vapor deposition
The array of multi-walled carbon nanotubes of vertical arrangement out eliminates traditional wiregrating production complexity, high-cost technical process, carbon nanotube
The thickness of film determines the extinction ratio of polarizing film, and the in-line arrangement multi-wall carbon nano-tube film of 5 micron thickness is to visible light wave range
Extinction ratio is about 30 decibels.
In the Chinese invention patent CN101893731A, Zhang Qingchuan et al. proposes a kind of based on pixel polarization chip arrays
Real-time polarization state and Method for Phase Difference Measurement describe measurement method, structure design, the working principle etc. of polarization chip arrays in detail,
But the patent is not directed to this technical problem of the production of micro- polarization arrays.
In Chinese invention patent CN103760681A, Dong Fengliang etc. proposes a kind of micro- polarizing film of metal nano grating
The production method of array.Including depositing layer of metal film on optical glass, grating matrix is constituted, film thickness is about that 150-250 receives
Rice;It in matrix surface spin coating positive electronic beam photoresist layer and is dried, passes through the side of electron beam lithography on photoresist layer
Method develops to obtain photoetching agent pattern;Using inductively coupled plasma etching, using with figuratum photoresist, as exposure mask, etching is golden
Belong to film layer, it will be in pattern transfer to metallic film.The method efficiency of electron beam lithography is relatively low, the high requirements on the equipment, only
It is made suitable for single-piece, it is impossible to be used in high-volume makes.
Summary of the invention
(1) technical problems to be solved
The purpose of the present invention is to provide a kind of micro- polarization chip arrays and preparation method thereof based on multi-walled carbon nanotube, with
At least partly solve above-mentioned technical problem.
(2) technical solution
According to an aspect of the present invention, a kind of production method of micro- polarization chip arrays based on multi-walled carbon nanotube is provided,
Include:
Make catalyst array;
Sheet array of multi-walled carbon nanotubes is grown on catalyst array;
The sheet array of multi-walled carbon nanotubes was fallen in substrate, multi-wall carbon nano-tube film array is formed;
The multi-wall carbon nano-tube film array is etched, micro- polarization chip arrays in a direction are obtained;
Aforesaid operations are repeated, make the polarization chip arrays of four direction respectively.
In a further embodiment, the production catalyst array includes:
Buffer layer is formed on the substrate and is dried;
It spin coating photoresist layer and is dried on the buffer layer;
On the photoresist layer, mask film covering version exposes and develops to obtain catalyst array figure;
Catalyst layer is formed on the array pattern;
The photoresist layer is removed, catalyst array is obtained.
In a further embodiment, the formation catalyst layer are as follows: pass through sputtering technology or electron beam evaporation work
Skill plates one layer of iron thin film layer on the photoetching offset plate figure array.
In a further embodiment, the described sheet array of multi-walled carbon nanotubes was fallen in substrate includes:
The sheet array of multi-walled carbon nanotubes is immersed into organic solvent, is dried after proposition.
In a further embodiment, the immersion organic solvent are as follows: by sheet multi-wall carbon nano-tube film edge and water
Plane parallel direction immerses in isopropanol or ethyl alcohol organic solvent, and proposes along former direction;The drying process are as follows: be in temperature
It is toasted 5-10 minutes on 80-100 DEG C of hot plate or in baking oven.
In a further embodiment, the etching multi-wall carbon nano-tube film array includes:
It spin coating photoresist layer and is dried on the multi-wall carbon nano-tube film array;
On the photoresist layer, mask film covering version exposes and develops to obtain the micro- polarizing film array pattern of photoresist;
The multi-wall carbon nano-tube film array is etched, by the pattern transfer to multi-wall carbon nano-tube film layer;
Remove the photoresist.
In a further embodiment, the growth sheet array of multi-walled carbon nanotubes is to use water Assisted Chemical Vapor
Sedimentation grows the array of multi-walled carbon nanotubes to form sequence arrangement.
In a further embodiment, when the growth array of multi-walled carbon nanotubes, being passed through gas includes: argon gas, hydrogen
Gas, ethylene, wet argon gas;Alternatively, being passed through gas includes: argon gas, hydrogen, acetylene and wet argon gas.
In a further embodiment, it is described respectively make four direction polarization chip arrays include: respectively make 0 °,
The polarization chip arrays of 45 °, 90 °, 135 ° four directions.
According to another aspect of the present invention, a kind of micro- polarization chip arrays based on multi-walled carbon nanotube are provided, comprising:
One or more polarizer units, and each polarizer unit includes the polarizing film of 4 different directions;Wherein, described
Polarizer material is multi-walled carbon nanotube.
In a further embodiment, micro- polarization chip arrays based on multi-walled carbon nanotube further include:
Substrate;
Buffer layer, deposition is on the substrate;
Graphical catalyst layer is deposited on the buffer layer;Wherein, the catalyst layer figure and polarizing film figure phase
Together, and micro- polarization is grown on the catalyst layer.
In a further embodiment, the polarizer unit be 0 °, 45 °, 90 °, 135 ° of four direction polarizing films, and
Edge is arranged successively to form 2*2 array clockwise.
In a further embodiment, the multi-walled carbon nanotube is the multi-walled carbon nanotube of sequence arrangement.
(3) beneficial effect
A kind of micro- polarization chip arrays based on multi-walled carbon nanotube provided by the invention and preparation method thereof include at least with
It is lower the utility model has the advantages that
It is carbon nanotube that the present invention, which makes micro- material for using of polarization chip arrays, carbon nanotube as monodimension nanometer material,
Light-weight, high mechanical strength, hexagonal structure connection is perfect, possesses excellent ductility, flexibility, the transparency, corrosion resistance,
Excellent electromaganic wave absorbing property.
The axial characteristic that apparent light, electrical anisotropy are shown with vertical axial of the multi-walled carbon nanotube of sequence arrangement.
The array of multi-walled carbon nanotubes of sequence arrangement, which can absorb, is parallel to axial light wave, through perpendicular to axial light wave.Carbon nanometer
Pipe in-line arrangement array can absorb polarization direction and its axial consistent light wave, and the free electron in carbon nanotube moves axially so.
When the polarization direction of incident light and consistent axial direction, the electronics in carbon nanotube makes photon energy with the vibration of photon direction of an electric field
Amount is transferred in multi-walled carbon nanotube electronically, is finally dissipated in the form of heat in carbon nanotube lattice structure.It utilizes
The polarization characteristic of in-line arrangement carbon nano-tube film, prior art complexity, cost can effectively be solved by being made into micro- polarization unit
The problem of height, low efficiency.
Detailed description of the invention
Fig. 1 be the embodiment of the present invention 0 ° of mask plate schematic diagram of catalyst array (other four angle diaphragm plate units only side
To angle difference, cellular construction size is consistent);
Fig. 2 is that the four direction of the embodiment of the present invention polarizes chip arrays manufacturing process schematic diagram;
Fig. 3 is 0 ° of mask plate schematic diagram of array of multi-walled carbon nanotubes (other four angle diaphragm plate lists of the embodiment of the present invention
First position is different, and cellular construction size is consistent);
Fig. 4 is the single cycle fabrication processing figure of the embodiment of the present invention, (is wherein still deposited on the step sample after 4e
In catalyst layer, only it is negligible relative to other layers with a thickness of 1-2 nanometers, therefore no longer indicates in figure);
Fig. 5 is that the sheet multi-walled carbon nanotube of the embodiment of the present invention densifies the process schematic that fell;
Fig. 6 is the production flow diagram of micro- polarization chip arrays based on multi-walled carbon nanotube of the embodiment of the present invention;
Fig. 7 is the multi-walled carbon nanotube water auxiliary of micro- polarization chip arrays based on multi-walled carbon nanotube of the embodiment of the present invention
CVD growth process figure.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
According to one embodiment of present invention, a kind of production side of micro- polarization chip arrays based on multi-walled carbon nanotube is provided
Method, as shown in Figure 5, comprising:
Make catalyst array;
Sheet array of multi-walled carbon nanotubes is grown on catalyst array;
By the sheet array of multi-walled carbon nanotubes fell the formation in substrate densification multi-wall carbon nano-tube film battle array
Column;
The multi-wall carbon nano-tube film array is etched, micro- polarization chip arrays in one of direction are obtained;
Aforesaid operations are repeated, the polarization chip arrays of four direction are made.
In the present embodiment, the production catalyst array includes:
Buffer layer is formed on the substrate and is dried;
It spin coating photoresist layer and is dried on the buffer layer;
On the photoresist layer, mask film covering version exposes and develops to obtain catalyst array figure;
Catalyst layer is formed on the array pattern;
The photoresist layer is removed, catalyst array is obtained.
Wherein, the mask plate is the mask plate of catalyst array, altogether includes four pieces, respectively 0 °, 45 °, 90 °, 135 °
The array of four direction, rectangular element line width determines the thickness after carbon nano-tube film fell, thus to micro- polarization arrays
Extinction ratio play decisive role.The reticle pattern size determines by designed polarization arrays unit size, muti-piece
Mask plate respectively corresponds the figure of multiple polarization directions, totally 0 °, 45 °, 90 °, 135 ° of four directions.
Wherein, described to form buffer layer in substrate are as follows: to plate one layer of aluminum oxide film in substrate by atom layer deposition process
Film, with a thickness of 10-20nm.It being dried to be toasted using hot plate or baking oven, the preferred baking temperature is 120-220 DEG C,
The baking time is 2-60 minutes.
Wherein, the spin coating photoresist layer for the spin coating extreme ultraviolet positive photoresist layer on the aluminum oxide film and is done
Dry processing.The photoresist is with a thickness of 0.8-1.6 microns, preferably AZ6112.It is dried to be toasted using hot plate, uses
Baking temperature is 100 DEG C when AZ6112 photoresist, and baking time is 60 seconds.
Wherein, the covering catalyst array mask plate on the photoresist layer exposes and develops to obtain photoresist carbon nanometer
When pipe grows array pattern, the mask plate is polarized to one piece be applied in four different directions, and making next direction
Corresponding mask plate is replaced when array.Preferably, time for exposure 2.3 seconds, developing time 30 seconds.
Wherein, the formation catalyst layer are as follows: by sputtering technology or electron beam evaporation process in the photoresist figure
One layer of iron thin film layer is plated on shape layer, is required according to multi-walled carbon nanotube growth quality, the iron thin film layer is with a thickness of 1-2 nanometers.
Wherein, it removes the photoresist layer and the photoresist layer is removed with ultrasonic treatment using acetone.It is urged to be formed
Agent array makes the catalyst of rectangle by the method for photoetching, just can be grown by water assistant chemical vapor deposition vertical
The carbon nano pipe array of the sheet of in line column.
In the present embodiment, the method that the growth sheet array of multi-walled carbon nanotubes uses water assistant chemical vapor deposition
It include: that the substrate for being coated with catalyst array pattern is put into the quartz ampoule of gaseous phase deposition stove;Argon gas, heating one are passed through after sealing
Start to be passed through hydrogen after determining temperature, temperature stabilization is passed through ethylene or acetylene in certain temperature, is then being passed through wet argon gas;Start
Grow the carbon nanotube until obtaining height and bulk density enough.The method of water assistant chemical vapor deposition can be used for growing vertical
Straight arranged array of multi-walled carbon nanotubes.It is grown in temperature controlling stove and carries out, be put into the sample with catalyst before starting growth
In gaseous phase deposition stove, the gas for growing carbon nano pipe array includes argon gas, hydrogen, ethylene (acetylene), wet argon gas.Timing is raw
Long, growth time determines that the height of carbon nano tube growth, highest can be grown to several millimeters of height.
In the present embodiment, the described sheet array of multi-walled carbon nanotubes was fallen in substrate includes: according to sheet
Carbon nano-tube film is parallel to the horizontal plane direction and immerses organic solvent, and organic solvent is isopropanol or ethyl alcohol;It is dried to adopt
It is toasted with hot plate, the baking temperature is 80-100 DEG C, and the baking time is 5-10 minutes;To obtain falling in substrate
Densification multi-wall carbon nano-tube film array, in-line arrangement direction was determined by growth array direction after falling.Wherein, in the present embodiment
The multi-walled carbon nanotube to fall to grow perpendicular to base falls down in a certain direction is in parallel direction as substrate.
Carbon nano pipe array does not infiltrate in water, infiltrates in organic solvent, and obtained sheet carbon nano pipe array is soaked
Carbon nano pipe array can be fallen by entering organic solvent, densification, while the feature for keeping array order to arrange.Fell direction with
The direction proposed from organic solvent is consistent, and pattern can also be made into the guiding trapezoidal, carbon nanotube is toppled in realization.Densification
In-line arrangement carbon nano-tube film volume fraction can be contracted to 50% from 1%.Densification array of multi-walled carbon nanotubes after falling
Film covers a layer photoresist as exposure mask on the area of the pattern surface that its needs retains by photoetching technique.Use reactive ion
Etch away the region that photoetching agent pattern is not covered with.Residue glue is washed away, the polarization chip arrays in the direction that can obtain falling.
In the present embodiment, the etching multi-wall carbon nano-tube film array includes:
It spin coating photoresist layer and is dried on the multi-wall carbon nano-tube film array;
On the photoresist layer, mask film covering version exposes and develops to obtain the micro- polarizing film array pattern of photoresist;
The multi-wall carbon nano-tube film array is etched, by the pattern transfer to multi-wall carbon nano-tube film layer;
Remove the photoresist.
Wherein, spin coating photoresist layer on the multi-wall carbon nano-tube film array, the photoresist layer are extreme ultraviolet photolithographic
Glue, with a thickness of 6-10 microns, preferably AZ4620, the baking temperature is 100 DEG C, and the baking time is 360 seconds.
Wherein, the mask plate is the mask plate of array of multi-walled carbon nanotubes, and used mask plate should be distinguished every time
It is corresponding with the secondary mask plate of catalyst array used is worked as.When selecting AZ4620, the time for exposure 25 seconds, developing time 3-5 points
Clock is dried up sample using nitrogen after development.
Wherein, the etching multi-wall carbon nano-tube film array uses reactive ion etching, to have the figure
Photoresist layer be exposure mask, the multi-wall carbon nano-tube film array is etched, by the pattern transfer to multi-walled carbon nanotube
Film layer.Preferably, reaction gas is oxygen, flow 10sccm, power 200W.
Wherein, the removal photoresist is to remove residue glue using acetone, to obtain micro- polarizing film in a direction
Array.
In the present embodiment, it is described respectively make four direction polarization chip arrays include: respectively make 0 °, 45 °, 90 °,
The polarization chip arrays of 135 ° of four directions.It is illustrated in figure 2 four direction polarization chip arrays manufacturing process schematic diagram, wherein Fig. 2 a
0 ° of micro- polarization subarray of production is recycled for first time;Fig. 2 b is second of circulation 45 ° of micro- polarization subarray of production;Fig. 2 c is third
Secondary circulation makes 90 ° of micro- polarization subarrays;Fig. 2 d is that the 4th circulation makes 135 ° of micro- polarization subarrays.
According to another embodiment of the invention, a kind of micro- polarization chip arrays based on multi-walled carbon nanotube are provided, comprising:
One or more polarizer units, and each polarizer unit includes the polarizing film of 4 different directions;Wherein, described
Polarizer material is multi-walled carbon nanotube.
In the present embodiment, micro- polarization chip arrays based on multi-walled carbon nanotube further include:
Substrate;
Buffer layer, deposition is on the substrate;
Graphical catalyst layer is deposited on the buffer layer;Wherein, the catalyst layer figure and polarizing film figure phase
Together, and micro- polarization is grown on the catalyst layer.
In the present embodiment, the substrate is transparent material, and the transparent material can be but be not limited to substrate of glass
Or silica substrate.
In the present embodiment, the buffer layer can be but be not limited to alumina layer, according to carbon nano tube growth quality
It is required that it is with a thickness of between 10-20nm.
In the present embodiment, the graphical catalyst layer can be one layer of iron film, and with a thickness of between 1-2nm, thickness can
It ignores, therefore omits in the accompanying drawings.
In the present embodiment, the polarizer unit is 0 °, 45 °, 90 °, 135 ° of four direction polarizing films, and along clockwise
It is arranged successively to form 2*2 array.
In the present embodiment, the multi-walled carbon nanotube is the multi-walled carbon nanotube of sequence arrangement.
Carbon nanotube is as monodimension nanometer material, and light-weight, high mechanical strength, hexagonal structure connection is perfect, possesses excellent
Good ductility, flexibility, the transparency, corrosion resistance, excellent electromaganic wave absorbing property.And the multi-wall carbon nano-tube that sequence is arranged
The axial characteristic that apparent light, electrical anisotropy are shown with vertical axial of pipe.
Below by an exemplary embodiment, the present invention is further described, and wherein preparation method includes:
Step 1: utilizing maskless photoetching machine, make the mask plate of the catalyst array of four direction, be as shown in Figure 1 to urge
0 ° of mask plate schematic diagram of agent array, wherein dash area light transmission, 100 microns of spacing, is in addition covered for three pieces by 6 microns of cell width
Film version, rectangular element length direction is respectively along 45 °, 90 °, 135 ° of three directions.And the exposure mask of array of multi-walled carbon nanotubes
Version, is illustrated in figure 30 ° of mask plate schematic diagram of array of multi-walled carbon nanotubes, wherein dash area light transmission, unit are 5 microns × 5
Micron, 8 microns of spacing, the other three direction is for etching the mask plate for forming array of multi-walled carbon nanotubes, micro- polarization unit ruler
It is very little consistent, it is laid out consistent with Fig. 2.
Step 2: as shown in fig. 4 a, using technique for atomic layer deposition, depositing 10 in the silica substrate 1 cleaned up
The aluminum oxide film layer 2 of nanometer thickness.
Step 3: as shown in Figure 4 b, blowing away sample surfaces dust, spin coating AZ6112 positivity the first light of extreme ultraviolet using nitrogen
Photoresist 3 forms the photoetching offset plate figure of carbon nano tube growth after exposure development, is placed on 100 DEG C of hot plates and toasts 60 seconds.Wherein,
Consider that iron catalyst 4lift off and pattern effect, photoresist thickness should be in 1 microns.Wherein, each recycling replacing is different
Angle catalyst array mask plate, until four angles are fully completed.
Step 4: as illustrated in fig. 4 c, sputtering one layer 1.5 in the sample surfaces for having photoetching offset plate figure using magnetron sputtering technique
Nanometer iron catalyst 4.Later, using acetone with 1-2 minutes removal glue patterns of ultrasonic cleaning and on photoetching offset plate figure
Iron utilizes nitrogen air-dry sample after cleaning up, obtained sample is as shown in figure 4d.
Step 5: 5 array of carbon nanotube is grown using the method for water assistant chemical vapor deposition.Catalyst array will be coated with
The silicon base of pattern is put into the quartz ampoule of gaseous phase deposition stove (internal diameter 180mm), and argon gas, flow 90sccm are passed through after sealing;
550 DEG C are warming up to start to be passed through hydrogen, flow 50sccm;Temperature, which is stablized, is passed through ethylene at 760 DEG C, flow 80sccm,
Wet argon gas, flow 9sccm;Start timing growth, carbon nano tube growth height is determined by growth time, what growth obtained for 15 minutes
Carbon nanotube height is about 400 microns, and bulk density is about 1%.Its growth course is as shown in fig. 7, the carbon nanotube grown
Sheet-like array sample is as shown in fig 4e.
Step 6: sheet of falling carbon nanotube in-line arrangement array makes its densification.As shown in figure 5, keeping sheet carbon nanotube
Maintain an equal level with horizontal plane, sheet carbon nanotube sheet array sample immersed in isopropanol, is proposed after being kept for the several seconds along immersion direction,
80 DEG C of upper bakings 10-20 minutes are placed on after proposition, obtain falling the densification in-line arrangement carbon nano-tube film in substrate.
Step 7: as shown in figure 4g, blowing away sample surfaces dust, spin coating AZ4620 positivity the second light of extreme ultraviolet using nitrogen
Photoresist 6 forms the photoetching offset plate figure of carbon nano tube growth after exposure development, is placed on 100 DEG C of hot plates and toasts 360 seconds.Wherein,
Carbon nanotube etching selects ratio with photoresist, and photoresist thickness should be at 6 microns or more.Wherein, each recycling replacing different angle
Array of multi-walled carbon nanotubes mask plate is etched, until four angles are fully completed.
Step 8: as shown in figure 4h, densification in-line arrangement carbon nano-tube film, power being etched using reactive ion etching technology
200W, oxygen flow 10sccm.
Step 9: as shown in figure 4i, the residue glue of sample surfaces after removal etching is cleaned using acetone, uses nitrogen after cleaning up
Air-blowing is dry, obtains micro- polarization arrays in one of direction.
Step 10: as shown in Figure 2.Circulation completes micro- polarization arrays all 0 °, 45 °, 90 °, 135 ° of four angles in four times
Production.
Finally obtain each array element be 2*2 multi-walled carbon nanotube polarizer unit, and each polarizer unit be 0 °, 45 °,
Micro- polarization chip arrays along the multi-walled carbon nanotube being arranged successively clockwise of 90 °, 135 ° four different directions polarizing films, bow
View is as shown in Figure 2 d.
It should be noted that can provide the demonstration of the parameter comprising particular value herein, but these parameters are without being definitely equal to
Corresponding value, but analog value can be similar in acceptable error margin or design constraint.The direction mentioned in embodiment
Term, such as "upper", "lower", "front", "rear", "left", "right" etc. are only the directions with reference to attached drawing, are not used to limit this hair
Bright protection scope.In addition, unless specifically described or the step of must sequentially occur, the sequences of above-mentioned steps there is no restriction in
It is upper listed, and can change or rearrange according to required design.And above-described embodiment can be examined based on design and reliability
Consider, the collocation that is mixed with each other is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be certainly
More embodiments are formed by combination.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (13)
1. a kind of production method of micro- polarization chip arrays based on multi-walled carbon nanotube characterized by comprising
Make catalyst array;
Sheet array of multi-walled carbon nanotubes is grown on catalyst array;
The sheet array of multi-walled carbon nanotubes was fallen in substrate, multi-wall carbon nano-tube film array is formed;
The multi-wall carbon nano-tube film array is etched, micro- polarization chip arrays in a direction are obtained;
Aforesaid operations are repeated, the polarization chip arrays of four direction are made.
2. the production method of micro- polarization chip arrays according to claim 1 based on multi-walled carbon nanotube, which is characterized in that
The production catalyst array includes:
Buffer layer is formed on the substrate and is dried;
It spin coating photoresist layer and is dried on the buffer layer;
On the photoresist layer, mask film covering version exposes and develops to obtain catalyst array figure;
Catalyst layer is formed on the array pattern;
The photoresist layer is removed, catalyst array is obtained.
3. the production method of micro- polarization chip arrays according to claim 2 based on multi-walled carbon nanotube, which is characterized in that
The formation catalyst layer are as follows: one layer is plated on the photoresist array pattern by sputtering technology or electron beam evaporation process
Iron thin film layer.
4. the production method of micro- polarization chip arrays according to claim 1 based on multi-walled carbon nanotube, which is characterized in that
The described sheet array of multi-walled carbon nanotubes was fallen in substrate includes: to immerse the sheet array of multi-walled carbon nanotubes
Organic solvent is dried after proposition.
5. the production method of micro- polarization chip arrays according to claim 4 based on multi-walled carbon nanotube, which is characterized in that
The immersion organic solvent are as follows: have sheet multi-wall carbon nano-tube film along direction immersion isopropanol or ethyl alcohol is parallel to the horizontal plane
In solvent, and proposed along former direction;The drying process are as follows: in temperature be to toast 5-10 on 80-100 DEG C of hot plate or in baking oven
Minute.
6. the production method of micro- polarization chip arrays according to claim 1 based on multi-walled carbon nanotube, which is characterized in that
The etching multi-wall carbon nano-tube film array includes:
It spin coating photoresist layer and is dried on the multi-wall carbon nano-tube film array;
On the photoresist layer, mask film covering version exposes and develops to obtain the micro- polarizing film array pattern of photoresist;
The multi-wall carbon nano-tube film array is etched, by the pattern transfer to multi-wall carbon nano-tube film layer;
Remove the photoresist.
7. the production method of micro- polarization chip arrays according to claim 1-6 based on multi-walled carbon nanotube,
It is characterized in that, the growth sheet array of multi-walled carbon nanotubes is to grow to form sequence row using water auxiliary chemical vapor deposition method
The array of multi-walled carbon nanotubes of cloth.
8. special according to the production method of the described in any item micro- polarization chip arrays based on multi-walled carbon nanotube of claim 7
Sign is, when the growth array of multi-walled carbon nanotubes, being passed through gas includes: argon gas, hydrogen, ethylene, wet argon gas;Alternatively, logical
Entering gas includes: argon gas, hydrogen, acetylene and wet argon gas.
9. the production method of micro- polarization chip arrays according to claim 1-6 based on multi-walled carbon nanotube,
It is characterized in that, the polarization chip arrays of the production four direction include: to make the inclined of 0 °, 45 °, 90 °, 135 ° four direction respectively
Shake chip arrays.
10. a kind of micro- polarization chip arrays based on multi-walled carbon nanotube characterized by comprising
One or more polarizer units, and each polarizer unit includes the polarizing film of 4 different directions;Wherein, the polarization
Sheet material is multi-walled carbon nanotube.
11. 0 described in any item micro- polarization chip arrays based on multi-walled carbon nanotube according to claim 1, which is characterized in that also
Include:
Substrate;
Buffer layer, deposition is on the substrate;
Graphical catalyst layer is deposited on the buffer layer;Wherein, the catalyst layer figure is identical as polarizing film figure,
And micro- polarization is grown on the catalyst layer.
12. 0 described in any item micro- polarization chip arrays based on multi-walled carbon nanotube according to claim 1, which is characterized in that institute
Stating polarizer unit is 0 °, 45 °, 90 °, 135 ° of four direction polarizing films, and along being arranged successively to form 2*2 array clockwise.
13. the described in any item micro- polarization chip arrays based on multi-walled carbon nanotube of 0-12, feature exist according to claim 1
In the multi-walled carbon nanotube is the multi-walled carbon nanotube of sequence arrangement.
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