CN109301030A - A kind of low cost N-type double-side cell preparation method - Google Patents
A kind of low cost N-type double-side cell preparation method Download PDFInfo
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- CN109301030A CN109301030A CN201811042688.4A CN201811042688A CN109301030A CN 109301030 A CN109301030 A CN 109301030A CN 201811042688 A CN201811042688 A CN 201811042688A CN 109301030 A CN109301030 A CN 109301030A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005554 pickling Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 238000007772 electroless plating Methods 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- 238000012545 processing Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 238000013019 agitation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 4
- 101710134784 Agnoprotein Proteins 0.000 claims description 3
- 229910002666 PdCl2 Inorganic materials 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 25
- 239000002184 metal Substances 0.000 abstract description 25
- 238000012546 transfer Methods 0.000 abstract description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052763 palladium Inorganic materials 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 241000931526 Acer campestre Species 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of preparation methods of inexpensive N-type double-side cell, comprising the following steps: (1) cleaning, making herbs into wool；(2) boron, phosphorus diffusion；(3) polished backside, etching, remove BSG/PSG；(4) front deposition of aluminium oxide；(5) front and back deposits SiNx；(6) front and back laser slotting；(7) pickling；(8) activate；(9) Electroless Plating Ni；(10) chemical silvering；(11) it anneals；(12) laser incising side and photoelectric processing.Silver paste usage amount of the present invention greatly reduces, the silver paste cost of whole 70% or more saving, and metal grid lines are thinner, and shading-area is smaller, and transfer efficiency is higher.
Description
Technical field
The invention belongs to area of solar cell, more particularly to a kind of using the low of electroless plated metal electrode technology production
The preparation method of the N-type double-side cell of cost.
Background technique
Photovoltaic power generation be it is a kind of cleaning, free of contamination renewable energy, the attention with various countries to environmental protection, photovoltaic hair
Electricity is by the important component as the following low-carbon economy.From China, photovoltaic industry status is analyzed, and entire industry competition is got over
It is fiercer to come, and traditional photovoltaic power generation technology can not meet now due to higher cost, transfer efficiency are relatively low etc. to light
Lie prostrate industry requirement, with the importing of new and effective technology, the transfer efficiency of photovoltaic cell is all being promoted every year, but in cost according to
It is so not improved, low cost becomes the straw to clutch at of photovoltaic industry struggle for existence；And wherein silver paste used in silk-screen printing is
Important one of the cost of photovoltaic cell is received from the point of view of batch production status though halftone and slurry producer are also constantly improving
Imitate little, the low-cost technologies that silk screen silver paste can be replaced to print certainly will become following photovoltaic and drop this core technology.
Traditional screen printing technique has a following technical disadvantages, and first, higher cost, silver paste dosage is larger；Second, printing
The gate electrode line of formation is wider, and shading-area is larger, and transfer efficiency is relatively low.
In addition, also there is the application of plating or chemical plating in crystal silicon solar batteries in existing market, thus instead of
Traditional screen printing technique, and occur plating or chemical plating be all based on substantially photoinduction plating, but this method have with
Lower disadvantage: first, equipment investment is larger, and terrible plating is be easy to cause in electroplating process；Second, photoinduction electroplating device is mostly flat
Board-like plating, is only used for one-side electroplating, can not carry out two-sided while be electroplated；Third, photoinduction plating or other chemical platings
Needing to carry out mask process in metal deposit, preparation method is complicated more；4th, electrode holder needs and cell piece in electroplating process
Contact is easy to cause fragment, influences the cell piece factor of merit.Thus the plating generated at present or chemical plating could not also meet the modern times
The production requirement of change.
Summary of the invention
To solve the above-mentioned problems, the purpose of the present invention is to provide a kind of inexpensive N-type double-side cell preparation method,
Using electroless plated metal electrode technology, can effectively save 70% or more silver paste consuming cost, and improve the transformation efficiency of battery；And
The electroless plated metal electrode technology of use be even more started just, the method for back two-sided common chemical plating, and be not necessarily to mask step, letter
Change production technology, improves production efficiency.
To achieve the goals above, the technical solution of the present invention is as follows:
A kind of preparation method of low cost N-type double-side cell, comprising the following steps:
(1) cleaning, making herbs into wool；
(2) boron, phosphorus diffusion；
(3) polished backside, etching, remove BSG/PSG；
(4) front deposition of aluminium oxide；
(5) front and back deposits SiNx: using tubular type PECVD method respectively to silicon wafer front and back depositing antireflection film, and being formed
The three stacking blooming structures of SiOx, SiNx, SiONx；
(6) front and back laser slotting；
(7) pickling: pickling is carried out to silicon wafer after laser slotting using HF solution, slot internal oxidition silicon is removed and laser slotting is formed
Damaging layer；
(8) activate: utilizing certain density PdCl2Solution is activated silicon wafer, then washes；
(9) Electroless Plating Ni: configuration chemical nickel-plating solution, the NiCl containing 21g/L in solution2, 45g/L Na3 C6H5O7·2H2O、
The NaH of 24g/L2PO2·H2O, the NH of 30g/L4Cl；The chemical nickel-plating solution temperature configured is controlled to 40-60 DEG C in stirring condition
It is lower to adjust chemical nickel-plating solution PH to 8-10 using alkaline solution, the silicon wafer after above-mentioned activation is vertically put into nickel plating reactive tank
Electroless Plating Ni is carried out, is washed after the completion of plating Ni；
(10) chemical silvering solution, the AgNO containing 11g/L in solution chemical silvering: are configured3With 17.5g/L's
C10H14N2Na2O8；The chemical silvering solution temperature of configuration is controlled to 20-30 DEG C, utilizes ammonium hydroxide by chemical silvering under agitation
Solution PH is adjusted to 8-10, and the silicon wafer after nickel plating is vertically put into silver plating reaction slot and carries out immersion silver, washes again after the completion of silver-plated
It is dried using nitrogen；
(11) anneal: the silicon wafer after will be silver-plated in chain-type sintering furnace under nitrogen atmosphere carries out annealing and forms nickel silicon alloy, moves back
320-370 DEG C of fiery temperature, annealing time 3-5 minutes；
(12) laser incising side and photoelectric processing.
As the preferred embodiment of the present invention: the antireflective coating formed in the step (5) is with a thickness of 80-90nm.
As a further improvement of the present invention: using optical maser wavelength for the ultraviolet picosecond laser of 355nm in the step (6)
Device can be reduced fluting damage, and keep notch thinner.
As the preferred embodiment of the present invention: the mass concentration of HF solution is 10% in the step (7).
As the preferred embodiment of the present invention: PdCl in the step (8)2Solution concentration is 1g/L, at silicon wafer activation
Time control is managed at 30-60 seconds.
Step (6) of the invention to step (12) are electroless plated metal electrode production process, and that replace traditional silk screens
Print electrode preparation method.
Wherein: (5) deposition SiNx in front and back forms place mat to step: and the SiOx+SiNx+SiONx structure formed, it utilizes
The high compactness of outermost layer silicon oxynitride, low-refraction characteristic can effectively stop the attachment of metal palladium ion in step (8), from
And save process masks；Outermost layer uses silicon oxynitride technique simultaneously, can increase the passivation effect of battery, improves turning for battery
Change efficiency.
(8) step activates: being the Metal Palladium of the slot inner surface depositing dosed quantities formed in fluting using the purpose that palladium activates
Grain provides surface catalyst effect for subsequent chemistry nickel plating, and specific reaction equation is as follows: 2Pd2+ + Si → 2Pd +
Si4+。
Step (9) chemical nickel plating: it is a self catalyzed reduction process, and the sodium hypophosphite in plating solution is main reducing agent,
Nickel ion is main oxidant；When just having started nickel plating, Metal Palladium Surface catalytic action makes nickel adhere to slot inner surface；With gold
Belong to the deposition of nickel, metallic nickel gradates prepares for attachment silver；Specific chemical equation is as follows: 2H2PO2 -+2H2O+
Ni2+→ Ni+H2+4H++2HPO3 2-。
The present invention has the advantage that compared with traditional screen printing technique
(1): being vertically put into reactive tank, by the processing of the two-sided activation of Metal Palladium in activation step, it is two-sided to can achieve primary and secondary gratings
It deposits simultaneously, simplifies printing-type single side distribution printing technology process.
(2): front and back antireflective coating uses silicon oxynitride structure using three stacking tunic designs, outermost layer.Three layers of difference
The antireflective coating of film quality can effectively increase the compactness of film layer.In step (7) pickling, silicon oxynitride trilamellar membrane can be effective
Prevention hydrofluoric acid etching.
(3) present invention makes full use of Metal Palladium activation step, and palladium ion is adsorbed in groove body surface, the slot adsorbed by palladium ion
Body is in the reaction of subsequent catalyst metallic nickel, to form certain metallic pattern.And unslotted region is due to front and back anti-reflection
The high compactness for penetrating film makes Metal Palladium that can not be attached to its surface, thus after washing unslotted region can not deposited metal, from
And reduce the generation of " ghost plating " phenomenon.Chemical nickel-plating solution temperature is controlled simultaneously to 40-60 DEG C, and formation temperature is suitably reacted
Rate, can be with effective solution " ghost plating " phenomenon, to save mask step.
(4) cost advantage: screen printing technique needs to bite on battery silver paste by applying external force to halftone, at present
The monolithic front side silver paste of mainstream producer common batteries uses consumption in 110 ± 10mg, and electroless plated metal electrode is using chemistry
Mode carries out metal deposit, instead of printing silver paste, the silver paste cost of whole 70% or more saving.
(5) high conversion efficiency: battery front side metal grid lines account for certain shading-area after silk-screen printing, will affect battery pair
The absorption of incident light directly affects the transfer efficiency of battery entirety, and the shading-area for reducing grid line is also to promote battery conversion effect
The key of rate, the halftone opening entire scope used of printing at present in 30 ± 3um, silver paste can expand 10 by printing-sintering ±
2um, battery metal grid line entirety line width is in 35 ± 5um；And it need to be swashed before electrode preparation by chemical deposition metal electrode
Light fluting, battery grid line line width depend primarily on the width of laser slotting, at present the laser producer laser grid line width of mainstream
In 25 ± 5um, after wet chemistry metal electrode prepares electrode, battery grid line line width is in 20-25um.This makes identical
Under battery grid line radical, grid line width is narrower, and the whole shading-area of grid line promotes the conversion effect of photovoltaic cell with regard to smaller indirectly
Rate.
Specific embodiment
With reference to embodiment, the specific embodiment of the present invention is further described.Following embodiment is only used for more
Add and clearly demonstrate technical solution of the present invention, and not intended to limit the protection scope of the present invention.
Embodiment 1:
The present embodiment is related to a kind of inexpensive N-type double-side cell preparation method, comprising the following steps:
(1) making herbs into wool: selection n type single crystal silicon piece is basis material, carries out alkali making herbs into wool, reflectivity 10% using groove type etching equipment；
(2) boron, phosphorus diffusion: carrying out boron, phosphorus diffusion to silicon wafer after making herbs into wool using tubular low-pressure diffusion furnace respectively, sheet resistance point after diffusion
It Wei not 80/183ohm；
(3) polished backside, etching, remove BSG/PSG；: the back side is polished using chain type etching apparatus, is etched, while going dephosphorization
Silica glass, Pyrex, reflectivity 30%；
(4) front deposition of aluminium oxide: deposition of aluminium oxide is carried out to front using ALD method, aluminium oxide is with a thickness of 5nm；
(5) front and back deposits SiNx: using tubular type PECVD method respectively to front and back depositing antireflection film, which is
SiOx+SiNx+SiONx structure, using the high compactness of outermost layer silicon oxynitride, low-refraction can effective barrier metal palladium
The attachment of ion can increase the passivation effect of battery to save process masks, while outermost layer uses silicon oxynitride technique
Fruit improves the transformation efficiency of battery, and front and back antireflective coating thickness is 85nm；
(6) front and back laser slotting: carried out using the ultraviolet picosecond laser of wavelength 355nm on front and back antireflective coating surface
Laser slotting, main grid line width 0.7mm, secondary grid line are 23 μm wide；
(7) pickling: the silicon wafer after laser slotting is carried out at room temperature pickling 10 seconds using the HF solution that mass concentration is 10%
Clock removes the damaging layer of slot internal oxidition silicon and laser slotting formation；
(8) activate: using concentration for the PdCl of 1g/L2Solution is at room temperature activated silicon wafer after pickling, and the time 30 seconds,
It washed, dried after activation；It is the Metal Palladium particle of the depositing dosed quantities in the slot that fluting is formed using the purpose that palladium activates,
Surface catalysis is provided for subsequent chemistry nickel plating；
(9) chemical nickel plating: configuration chemical nickel-plating solution, the NiCl containing 21g/L in solution2, 45g/L Na3 C6H5O7·2H2O、
The NaH of 24g/L2PO2·H2O, the NH of 30g/L4Cl；Control configuration chemical nickel-plating solution temperature to 50 DEG C under agitation
Chemical nickel-plating solution PH to 9 is adjusted using ammonium hydroxide, i.e. chemical nickel-plating solution becomes blue from light green, by the silicon after above-mentioned activation
Piece, which is vertically put into nickel plating reactive tank, carries out chemical nickel plating, is washed after the completion of nickel plating；Using ammonium hydroxide tune PH to 9, can make to plate
Speed reaction most fastization, and promote to form smooth, uniform nickel layer, be conducive to the deposition of subsequent metal silver；Control temperature extremely simultaneously
50 DEG C, and reaction rate is made to become more gentle, it is unlikely to form fast response, while the lower solution evaporation of temperature is slower, favorably
In the stability of plating solution；
(10) chemical silvering solution, the AgNO containing 11g/L in solution chemical silvering: are configured3With 17.5g/L's
C10H14N2Na2O8；The chemical silvering solution temperature of configuration is controlled to 25 DEG C, utilizes ammonium hydroxide that chemical silvering is molten under agitation
Liquid PH is adjusted to 9, and the silicon wafer after nickel plating is vertically put into silver plating reaction slot and carries out immersion silver, washes after the completion of silver-plated and recycles nitrogen
Gas drying；Nickel layer thickness is 2 μm or so in detection slot；Silver thickness is about 0.5 μm.
(11) it anneals: the silicon wafer after plating being placed in the chain-type sintering furnace of nitrogen atmosphere and is annealed, is formed in annealing process
Nickel silicon alloy increases the binding force of metal grid lines and silicon, wherein 350 DEG C of annealing temperature, and annealing time 4 minutes；
(12) subsequent that N-type double-side cell can be obtained behind laser incising side and photoelectric processing.
Silver paste usage amount of the present invention greatly reduces, the silver paste cost of whole 70% or more saving.The present invention keeps metal grid lines thin
Line, the present invention is formed by grid line carefully close to 10-15 μm compared with traditional printing formula, and shading-area is smaller, and transfer efficiency is more
It is high.The major and minor grid of the present invention are two-sided to be deposited simultaneously, simplifies printing-type single side distribution printing technology process.
The present invention is low temperature process in metallization processes, it is entirely avoided silk-screen printing high temperature sintering forms metal gate
Cell piece buckling problem caused by line.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (5)
1. a kind of preparation method of low cost N-type double-side cell, which comprises the following steps:
(1) cleaning, making herbs into wool；
(2) boron, phosphorus diffusion；
(3) polished backside, etching, remove BSG/PSG；
(4) front deposition of aluminium oxide；
(5) front and back deposits SiNx: using tubular type PECVD method respectively to silicon wafer front and back depositing antireflection film, and being formed
The three stacking blooming structures of SiOx, SiNx, SiONx；
(6) front and back laser slotting；
(7) pickling: pickling is carried out to silicon wafer after laser slotting using HF solution, slot internal oxidition silicon is removed and laser slotting is formed
Damaging layer；
(8) activate: utilizing certain density PdCl2Solution is activated silicon wafer, then washes；
(9) Electroless Plating Ni: configuration chemical nickel-plating solution, the NiCl containing 21g/L in solution2, 45g/L Na3 C6H5O7·2H2O、
The NaH of 24g/L2PO2·H2O, the NH of 30g/L4Cl；The chemical nickel-plating solution temperature configured is controlled to 40-60 DEG C in stirring condition
It is lower to adjust chemical nickel-plating solution PH to 8-10 using alkaline solution, the silicon wafer after above-mentioned activation is vertically put into nickel plating reactive tank
Electroless Plating Ni is carried out, is washed after the completion of plating Ni；
(10) chemical silvering solution, the AgNO containing 11g/L in solution chemical silvering: are configured3With 17.5g/L's
C10H14N2Na2O8；The chemical silvering solution temperature of configuration is controlled to 20-30 DEG C, utilizes ammonium hydroxide by chemical silvering under agitation
Solution PH is adjusted to 8-10, and the silicon wafer after nickel plating is vertically put into silver plating reaction slot and carries out immersion silver, washes again after the completion of silver-plated
It is dried using nitrogen；
(11) anneal: the silicon wafer after will be silver-plated in chain-type sintering furnace under nitrogen atmosphere carries out annealing and forms nickel silicon alloy, moves back
320-370 DEG C of fiery temperature, annealing time 3-5 minutes；
(12) laser incising side and photoelectric processing.
2. the preparation method of low cost N-type double-side cell according to claim 1, which is characterized in that in the step (5)
The antireflective coating of formation is with a thickness of 80-90nm.
3. the preparation method of low cost N-type double-side cell according to claim 1, which is characterized in that in the step (6)
Use wavelength for the ultraviolet picosecond laser of 355nm.
4. the preparation method of low cost N-type double-side cell according to claim 1, which is characterized in that in the step (7)
The mass concentration of HF solution is 10%.
5. the preparation method of low cost N-type double-side cell according to claim 1, which is characterized in that in the step (8)
PdCl2Solution concentration is 1g/L, is activated time control at 30-60 seconds to silicon wafer.
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