CN109300927A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN109300927A CN109300927A CN201811178557.9A CN201811178557A CN109300927A CN 109300927 A CN109300927 A CN 109300927A CN 201811178557 A CN201811178557 A CN 201811178557A CN 109300927 A CN109300927 A CN 109300927A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, described image sensor includes: semiconductor substrate；Multiple pixel devices are located in the semiconductor substrate；Multiple optical filters with different filtered colors, are set to the surface of the semiconductor substrate；Wherein, light absorption film is provided between each optical filter and pixel device under it, and the light absorption film below the optical filter with different filtered colors has different light transmittances, the wavelength of light of the filtered color is longer, and the light transmittance of the light absorption film is lower.The present invention program helps to create enough photoelectrons, improves the sensitivity of described image sensor.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is the core component of picture pick-up device, realizes image taking function by converting optical signals into electric signal
Energy.By taking cmos image sensor (CMOS Image Sensors, abbreviation CIS) device as an example, since it is with low-power consumption and height
The advantages of signal-to-noise ratio, therefore be widely applied in various fields.
For later illuminated (Back-side Illumination, abbreviation BSI) CIS, in existing manufacturing process, first
Logical device, pixel device and metal interconnection structure are formed in semiconductor substrate, then using carrying wafer and described half
The front bonding of conductor substrate, and then the back of semiconductor substrate is carried out thinned, and then it is formed at the back side of semiconductor substrate
The subsequent technique of CIS, such as dielectric layer is formed at the semiconductor substrate back side of the pixel device, and then on the surface of dielectric layer
Form optical filter (Color Filter) matrix etc..
Wherein, filter matrix generally includes multiple minimum repetitive units, by taking Bayer (Bayer) filter array as an example,
Green filter, red filter and blue filter are generally included in the minimum repetitive unit.Specifically, red light
The wavelength of line is greater than the wavelength of green light, and the wavelength of green light is greater than the wavelength of blue ray.
However, in the prior art, the wavelength of feux rouges and green light is longer, cause to pass through photodiode in feux rouges and green light
During, light absorption is less, it is difficult to generate enough photoelectrons, cause sensitivity lower, or even light occurs and passes through refraction
The problem of adjacent photodiode causes optical crosstalk with being reflected into.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, help to create enough
Photoelectron improves the sensitivity of described image sensor.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: semiconductor substrate；It is more
A pixel device is located in the semiconductor substrate；Multiple optical filters with different filtered colors, are set to the semiconductor
The surface of substrate；Wherein, it is provided with light absorption film between each optical filter and pixel device under it, and there is difference
Light absorption film below the optical filter of filtered color has different light transmittances, and the wavelength of light of the filtered color is longer,
The light transmittance of the light absorption film is lower.
Optionally, the multiple optical filter with different filtered colors include green filter, red filter and
Blue filter has the material of the light absorption film below the optical filter of different filtered colors identical, and the red filter
The thickness of light absorption film below device is greater than the thickness of the light absorption film below the green filter, the green filter
The thickness of light absorption film below device is greater than the thickness of the light absorption film below the blue filter.
Optionally, the multiple optical filter with different filtered colors include green filter, red filter and
Blue filter has the thickness of the light absorption film below the optical filter of different filtered colors identical, and the red filter
The band gap width of the material of light absorption film below device is less than the material of the light absorption film below the green filter
The band gap width of band gap width, the material of the light absorption film below the green filter is less than below the blue filter
Light absorption film material band gap width.
Optionally, the material of the light absorption film is selected from: SiGe, GaAs, PbS, PbSe, PbTe, GaSb and InN.
Optionally, the imaging sensor further include: filled layer, the filled layer cover the one of the light absorption film
Part, and expose the light absorption film below the optical filter of at least one filtered color；Wherein, the surface of the filled layer with
The surface of the semiconductor substrate flushes.
Optionally, the material of the filled layer is selected from: silica, silicon nitride, amorphous carbon and amorphous silicon.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, comprising: provide
Semiconductor substrate, the semiconductor substrate is interior to have pixel device；On the surface of the semiconductor substrate, formed multiple with not
With the optical filter of filtered color；Wherein, it is provided with light absorption film between each optical filter and pixel device under it, and
Light absorption film below optical filter with different filtered colors has different light transmittances, the light wave of the filtered color
Longer, the light transmittance of the light absorption film is lower.
Optionally, before the multiple optical filters with different filtered colors of formation, the imaging sensor
Forming method further include: the multilayer filled layer stacked is formed on the surface of the semiconductor substrate；After one layer of filled layer of every formation,
Currently the multilayer filled layer that has been formed is to form groove for etching, the position of the groove and the optical filter of corresponding filtered color
Position is identical；After forming the groove every time, light absorption film corresponding with the filtered color is filled into the groove；
Wherein, the surface of later layer filled layer covering preceding layer filled layer and the surface of the light absorption film in preceding layer filled layer,
And when forming groove, the wavelength according to filtered color sequentially forms the optical filter of various filtered colors from long sequence is short to
Corresponding groove.
Optionally, the multiple optical filter with different filtered colors include green filter, red filter and
Blue filter has the material of the light absorption film below the optical filter of different filtered colors identical, and the red filter
The thickness of light absorption film below device is greater than the thickness of the light absorption film below the green filter, the green filter
The thickness of light absorption film below device is greater than the thickness of the light absorption film below the blue filter.
Optionally, before the multiple optical filters with different filtered colors of formation, the imaging sensor
Forming method further include: form the filled layer for covering the semiconductor substrate；Filled layer described in multiple etching is to form groove, often
The position for the groove that secondary etching is formed is identical as the corresponding position of optical filter of filtered color；After forming the groove every time,
Light absorption film corresponding with the filtered color is filled into the groove.
Optionally, the multiple optical filter with different filtered colors include green filter, red filter and
Blue filter has the thickness of the light absorption film below the optical filter of different filtered colors identical, and the red filter
The band gap width of the material of light absorption film below device is less than the material of the light absorption film below the green filter
The band gap width of band gap width, the material of the light absorption film below the green filter is less than below the blue filter
Light absorption film material band gap width.
Optionally, the material of the filled layer is selected from: silica, silicon nitride, amorphous carbon and amorphous silicon.
Optionally, the material of the light absorption film is selected from: GaAs, PbS, PbSe, PbTe, GaSb and InN.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, described image sensor includes: semiconductor substrate；Multiple pixel devices are located at described
In semiconductor substrate；Multiple optical filters with different filtered colors, are set to the surface of the semiconductor substrate；Wherein, often
Light absorption film is provided between a optical filter and pixel device under it, and under the optical filter with different filtered colors
Side light absorption film have different light transmittances, the wavelength of light of the filtered color is longer, the light absorption film it is saturating
Light rate is lower.Using the above scheme, by the way that light absorption film, the light absorption in the region of the optical filter corresponding to different colours is arranged
Film has different light transmittances, and the wavelength for corresponding to the light of optical filter is longer, and the light transmittance of the light absorption film is got over
It is low, it can make longer wavelengths of light during passing through imaging sensor, the incident photon being pierced by is reduced, so that absorbing
Incident photon increase, to help to create enough photoelectrons, improve the sensitivity of described image sensor.
Further, the material of the light absorption film below the optical filter with different filtered colors is identical and described red
The thickness of light absorption film below color optical filter is greater than the thickness of the light absorption film below the green filter, described green
The thickness of light absorption film below color optical filter is greater than the thickness of the light absorption film below the blue filter.Using this
The scheme of inventive embodiments can make longer wavelengths of light pass through thicker light absorption film, to be absorbed more
Incident photon helps to improve the sensitivity of described image sensor.
Further, the thickness of the light absorption film below the optical filter with different filtered colors is identical and described red
The band gap width of the material of light absorption film below color optical filter is less than the light absorption film below the green filter
The band gap width of the band gap width of material, the material of the light absorption film below the green filter is less than the blue filter
The band gap width of the material of light absorption film below device.Using the scheme of the embodiment of the present invention, can make longer wavelengths of
Light passes through the smaller light absorption film of band gap width, since the semiconductor material with smaller bandwidth usually can compare
Semiconductor material with bigger bandwidth absorbs more light, so that longer wavelengths of light is absorbed more
Incident photon helps to improve the sensitivity of described image sensor.
Further, the filled layer of a part of the light absorption film is covered by setting, and exposes at least one filter
Light absorption film below the optical filter of light color, and the surface of the filled layer is flushed with the surface of the semiconductor substrate,
The uneven surface due to multiple light absorption films can be avoided and shadow after the light absorption film being set, there is different-thickness
Ring the effect of filter matrix.
Detailed description of the invention
Fig. 1 is a kind of top view of imaging sensor in the prior art；
Fig. 2 is in Fig. 1 along the sectional view of cutting line A1-A2；
Fig. 3 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention；
Fig. 4 to Figure 12 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram；
Figure 13 is a kind of top view of imaging sensor in the embodiment of the present invention；
Figure 14 is in Figure 13 along the schematic diagram of the section structure of cutting line B1-B2；
Figure 15 is the schematic diagram of the section structure of another imaging sensor in the embodiment of the present invention.
Specific embodiment
In the prior art, pixel device is usually formed in semiconductor substrate, the pixel device may include photoelectricity
Then diode forms the optical filter with different filtered colors at the back side of semiconductor substrate.Due to the wave of feux rouges and green light
Length is longer, causes during feux rouges and green light pass through photodiode, light absorption is less, it is difficult to generate enough photoelectricity
Son causes sensitivity lower, or even light occurs and causes optical crosstalk by reflecting and being reflected into adjacent photodiode
The problem of.
In conjunction with referring to Figures 1 and 2, Fig. 1 is that a kind of top view of imaging sensor, Fig. 2 are that edge is cut in Fig. 1 in the prior art
The sectional view of secant A1-A2.
Described image sensor may include semiconductor substrate 100, pixel device 102, filter matrix.Wherein, described
Pixel device 102 may include photodiode, can be located in the semiconductor substrate 100.
In specific implementation, the filter matrix may include multiple minimum repetitive units 140, with Bayer optical filter battle array
It is classified as example, each minimum repetitive unit 140 may include four optical filters, respectively red filter 141, green filter
142, green filter 143 and blue filter 144.
Further, it can be separated using grid (Grid) structure 150 between each optical filter.The cell structure 150
It can be to be latticed, for incident light to be isolated, to reduce the optical crosstalk of the incident light received by different optical filters, institute
Stating cell structure 150 can have multiple mesh openings, and each optical filter is located in the mesh openings of the cell structure 150.
Wherein, the cell structure 150 can be metallic grid (Metal Grid) structure.
Further, described image sensor can also include dielectric layer 110, and the dielectric layer 110 can be located at described
The surface of semiconductor substrate 100 can form the dielectric layer 110 using dielectric material, such as can adopt in specific implementation
With silicon oxide layer, silicon nitride layer, the stack layer of silica and silicon nitride can also be used.
The present inventor has found after study, in the prior art, described for the optical filter of different filtered colors
Pixel device 102 between optical filter material and its thickness be consistent, lead to the light to different colours, light absorption is not
Together.Specifically, to the longer light of wavelength, it is easier to it is less that light absorption occur, it is difficult to lead to the problem of enough photoelectronic.
In embodiments of the present invention, described image sensor includes: semiconductor substrate；Multiple pixel devices are located at described
In semiconductor substrate；Multiple optical filters with different filtered colors, are set to the surface of the semiconductor substrate；Wherein, often
Light absorption film is provided between a optical filter and pixel device under it, and under the optical filter with different filtered colors
Side light absorption film have different light transmittances, the wavelength of light of the filtered color is longer, the light absorption film it is saturating
Light rate is lower.Using the above scheme, by the way that light absorption film, the light absorption in the region of the optical filter corresponding to different colours is arranged
Film has different light transmittances, and the wavelength for corresponding to the light of optical filter is longer, and the light transmittance of the light absorption film is got over
It is low, it can make longer wavelengths of light during passing through imaging sensor, the incident photon being pierced by is reduced, so that absorbing
Incident photon increase, to generate enough photoelectrons, improve the sensitivity of described image sensor.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 3, Fig. 3 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S21 to step S22:
Step S21: semiconductor substrate is provided, there is pixel device in the semiconductor substrate；
Step S22: on the surface of the semiconductor substrate, multiple optical filters with different filtered colors are formed, wherein
Light absorption film, and the optical filter with different filtered colors are provided between each optical filter and pixel device under it
The light absorption film of lower section has different light transmittances, and the wavelength of light of the filtered color is longer, the light absorption film
Light transmittance is lower.
Above-mentioned each step is illustrated below with reference to Fig. 4 to Figure 12.
Fig. 4 to Figure 12 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram.
Referring to Fig. 4, semiconductor substrate 200 is provided, there is pixel device 202 in the semiconductor substrate 200, described half
The surface of conductor substrate forms the first filled layer 211.
Wherein, the pixel device 202 can be located in the semiconductor substrate 200, and first filled layer 211 can be with
Positioned at the surface of the semiconductor substrate 200.
Specifically, the semiconductor substrate 200 can also may be used for the material of silicon substrate or the semiconductor substrate 200
Think the material appropriate applied to imaging sensor such as germanium, SiGe, silicon carbide, GaAs or gallium indium, the semiconductor
Substrate 200 can also have epitaxial layer for the silicon substrate of insulator surface or the germanium substrate of insulator surface, or growth
The substrate of (Epitaxy layer, abbreviation Epi layer).Preferably, the semiconductor substrate 200 can be half be lightly doped
Conductor substrate, and doping type is opposite with drain region.Specifically, can by the semiconductor substrate 200 carry out ion implanting,
Realize deep trap doping (Deep Well Implant)
The pixel device 202 may include photodiode (Photo Diode, abbreviation PD) and pixel circuit,
In, the pixel circuit may include forming selection transistor, reset transistor and source with the various crystalline substances appropriate such as transistor
The device of body pipe, such as may include transmission grid (Transfer Gate, abbreviation TG) and floating diffusion region (Floating
Diffusion, abbreviation FD).It should be pointed out that in embodiments of the present invention, not making for the composition of specific pixel circuit
Limitation.
Further, on the surface of the pixel device 202, metal interconnection structure, the metal interconnection can also be formed
Structure may include more metal layers, can be connected by through-hole between the more metal layers and by interlayer dielectric layer point
From.It should be pointed out that the metal interconnection structure is formed in the front of the semiconductor substrate, first filled layer 211
It is formed in the back side of the semiconductor substrate.
Further, the material of first filled layer 211 can be selected from: silica, silicon nitride, amorphous carbon and nothing
Shape silicon, can also be the lamination of silica and silicon nitride.
Wherein, the silica for example can be SiO2, the silicon nitride for example can be Si3N4。
Referring to Fig. 5, the first layer mask layer (Photo Resist, abbreviation PR) for covering first filled layer 211 is formed
261, expose the filter areas of the first filtered color；It then is exposure mask with the first layer mask layer 261, to described first
Filled layer 211 performs etching, to form groove 271, the position of the groove 271 and the optical filtering for corresponding to the first filtered color
The position of device is identical.
In embodiments of the present invention, when forming the trench, can according to the wavelength of filtered color from being short to long sequence, according to
The secondary corresponding groove of optical filter for forming various filtered colors.
Specifically, the light of the difference filtered color may include infrared light, feux rouges, green light, blue light and ultraviolet
For light, since the wavelength of above-mentioned light is followed successively by ultraviolet light, blue and green light, feux rouges and infrared light, institute from length is short to
Stating the first filtered color can be ultraviolet light.
In the embodiment of the present invention shown in Fig. 5, the light with the different filtered colors includes feux rouges, green light, blue light
For be illustrated, then the first described filtered color can be the shortest blue light of wavelength.
Referring to Fig. 6, the filling light absorption film 221 corresponding with blue light into the groove 271 (referring to Fig. 5).
Specifically, the step of forming light absorption film 221 may include: to fill light absorption into the groove 271
Thin-film material, the surface of the light absorption film material is higher than the surface of first filled layer 211, then to the light absorption
Thin-film material is planarized, to form light absorption film 221.
Wherein, the material of the light absorption film 221 can be selected from: SiGe (SiGe), GaAs (GaAs), vulcanized lead
(PbS), tin lead (PbSe), lead telluride (PbTe), gallium antimonide (GaSb) and indium nitride (InN).
Specifically, with the semiconductor material of lesser band gap width (Energy band gap), also known as narrow band gap half
Conductor material, electronics therein by valence band be excited to minimum energy that conduction band (Conduction band) must obtain compared with
It is small, it is easy to be excited, therefore be also easy to be absorbed into light therein.
Preferably, the light absorption film 221 can be formed using SiGe, wherein the content of germanium (Ge) is higher, and band gap is wide
It spends smaller.It specifically, can be during forming SiGe film using depositing operation, by adjusting Ge in reaction source gas
Ratio forms the light absorption film 221 with different band gap widths.
It should be pointed out that the light that light absorption film 221 absorbs can be conducted to pixel device (example using conducting structure
Such as photodiode or floating diffusion region), the conducting structure for example can using polysilicon (Poly), metal silicide,
Metal material etc..The embodiment of the present invention for specific light conduction pattern with no restriction.
Referring to Fig. 7, form the second filled layer 212, second filled layer 212 cover the surface of the first filled layer 211 with
And the surface of the light absorption film 221 in first filled layer 211,
Further, the material of second filled layer 212 can be selected from: silica, silicon nitride, amorphous carbon and nothing
Shape silicon, can also be the lamination of silica and silicon nitride.
Referring to Fig. 8, the second layer mask layer 262 for covering second filled layer 212 is formed, exposes second of filtered color
Filter areas；Then it is exposure mask with the second layer mask layer 262, second filled layer 212 is performed etching, with shape
At groove 272, the position of the groove 272 is identical as the position of optical filter of second of filtered color is corresponded to.
In embodiments of the present invention, it is said so that the light of the different filtered colors includes feux rouges, green light, blue light as an example
Bright, then second of filtered color can be green light.
Referring to Fig. 9, the filling light absorption film 222 corresponding with green light into the groove 272 (referring to Fig. 8).
Specifically, the step of forming light absorption film 222 may include: to fill light absorption into the groove 272
Thin-film material, the surface of the light absorption film material is higher than the surface of second filled layer 212, then to the light absorption
Thin-film material is planarized, to form light absorption film 222.
Wherein, the material of the light absorption film 222 can be identical as the material of the light absorption film 221, to reduce
Process implementing difficulty and research and development complexity.
Referring to Fig.1 0, form third filled layer 213, the third filled layer 213 cover the surface of the second filled layer 212 with
And the surface of the light absorption film 222 in second filled layer 212,
Further, the material of the third filled layer 213 can be selected from: silica, silicon nitride, amorphous carbon and nothing
Shape silicon, can also be the lamination of silica and silicon nitride.
Referring to Fig.1 1, the third layer mask layer 263 for covering the third filled layer 213 is formed, the third optical filtering face is exposed
The filter areas of color；Then it is exposure mask with the third layer mask layer 263, the third filled layer 213 is performed etching, with
Groove 273 is formed, the position of the groove 273 is identical as the position of optical filter of the third filtered color is corresponded to.
In embodiments of the present invention, it is said so that the light of the different filtered colors includes feux rouges, green light, blue light as an example
Bright, then the third described filtered color can be the longest feux rouges of wavelength.
Referring to Fig.1 2, the filling light absorption film 223 corresponding with feux rouges into the groove 273 (referring to Fig.1 1).
Specifically, the step of forming light absorption film 223 may include: to fill light absorption into the groove 273
Thin-film material, the surface of the light absorption film material is higher than the surface of the third filled layer 213, then to the light absorption
Thin-film material is planarized, to form light absorption film 223.
Wherein, the material of the light absorption film 223 can be with the light absorption film 221 and light absorption film 222
Material it is identical, with reduce process implementing difficulty and research and development complexity.
It should be pointed out that when the light of the different filtered colors includes more light, such as further include that wavelength is longer
Infrared ray when, then can continuously form covering preceding layer filled layer surface and the light absorption film in preceding layer filled layer
Surface filled layer, then etching currently and then filled out into the groove with forming groove by the multilayer filled layer that has been formed
Fill light absorption film corresponding with the infrared ray.In embodiments of the present invention, the number of plies of the filled layer, light absorption film of formation
It is related to the different light of filtered color, and with no restriction to specific number of plies quantity.
In embodiments of the present invention, the filled layer of a part of the light absorption film is covered by setting, and is exposed
Light absorption film below the optical filter of at least one filtered color, and the surface of the filled layer and the semiconductor substrate
200 surface flushes, and can avoid after the light absorption film is arranged and has different-thickness due to multiple light absorption films
Uneven surface, influence the effect of filter matrix.
It is possible to further form protective layer (not shown), the filter being subsequently formed on the surface of the third filled layer 213
Light device matrix is located at the surface of the protective layer.
Further, the material of the protective layer can be selected from: silica, silicon nitride, amorphous carbon and amorphous silicon.
In embodiments of the present invention, the protective layer that the filled layer is covered by being formed helps be subsequently formed optical filtering
When device matrix, filled layer and light absorption film are protected, avoid generating it injury.
It is a kind of top view of imaging sensor, Tu14Shi in the embodiment of the present invention in conjunction with referring to Fig.1 3 and Figure 14, Figure 13
Along the schematic diagram of the section structure of cutting line B1-B2 in Figure 13.
Filter matrix is formed, the filter matrix is stacked in the third filled layer 213 and light absorption film 223
On, each filter matrix includes the optical filter of a variety of different colours.
The filter matrix may include multiple minimum repetitive units 240, by taking Bayer filter array as an example, each most
Small repetitive unit 240 may include four optical filters, respectively red filter 241, green filter 242, green filter
243 and blue filter 244.
Although it should be pointed out that being described for comprising 4 minimum repetitive units 240 in figure, of the invention real
Apply in example, for minimum repetitive unit 240 repetition number with no restriction, for each in each minimum repetitive unit 240
The specific color of optical filter, placement location and sequence are also with no restriction.
The filter matrix can be located at the front of the semiconductor substrate 200, may be located on the semiconductor lining
The back side at bottom 200.In the back-illuminated type CIS shown in Fig. 8, the filter matrix is located at the back side of the semiconductor substrate 200.
Specifically, in the prior art, CIS may include (Front-side Illumination, abbreviation front-illuminated
FSI) CIS and rear illuminated CIS, the rear illuminated CIS are referred to as back-illuminated type CIS.In CIS front-illuminated, light is from partly leading
Photo-generated carrier is generated in the front illuminated to photodiode of body substrate, and then forms electric signal.In back-illuminated type CIS, light
Line generates photo-generated carrier from the back side illuminaton to photodiode of semiconductor substrate, and then forms electric signal.
Further, it can be separated using cell structure 250 between each optical filter.The cell structure 250 can be
It is latticed, it can have multiple mesh openings, each optical filter is located in the mesh openings of the cell structure 250.Wherein, institute
Stating cell structure 250 can be metallic grid structure.
Further, described image sensor can also include lens arrangement 260, and the lens arrangement 260 can be used for
Obtain incident light.
In embodiments of the present invention, the material of the light absorption film below the optical filter with different filtered colors is identical,
And the thickness of the light absorption film 223 of 241 lower section of red filter is greater than the light absorption of 242 lower section of green filter
The thickness of the thickness of film 222, the light absorption film 222 of 242 lower section of green filter is greater than the blue filter 243
The thickness of the light absorption film 221 of lower section.Using the scheme of the embodiment of the present invention, longer wavelengths of light can be made to pass through more
Thick light absorption film helps to improve the sensitivity of described image sensor to be absorbed more incident photons.
In embodiments of the present invention, by the way that light absorption film, the light in the region of the optical filter corresponding to different colours is arranged
Absorbing membrane has different light transmittances, and the wavelength for corresponding to the light of optical filter is longer, the light transmission of the light absorption film
Rate is lower, can make longer wavelengths of light during passing through imaging sensor, and the incident photon being pierced by is reduced, so that
The incident photon of absorption increases, to generate enough photoelectrons, improves the sensitivity of described image sensor.
5, Figure 15 is the schematic diagram of the section structure of another imaging sensor in the embodiment of the present invention referring to Fig.1.
Specifically, the step of forming another imaging sensor shown in figure 15 may include: offer semiconductor substrate
300, the semiconductor substrate is interior to have pixel device 302；Form the filled layer 314 for covering the semiconductor substrate；Repeatedly carve
Lose the filled layer 314 to form groove, the position of the groove that etching is formed every time and the position of the optical filter of corresponding filtered color
It sets identical；After forming the groove every time, light absorption film corresponding with the filtered color is filled into the groove, with
Be respectively formed the light absorption film 321 of the lower section of blue filter 343, the light absorption film 322 of 342 lower section of green filter and
The light absorption film 323 of 341 lower section of red filter.
Wherein, the thickness of the light absorption film below the optical filter with different filtered colors is identical, and the red filter
The light absorption that the band gap width of the material of the light absorption film 323 of 341 lower section of light device is less than 342 lower section of green filter is thin
The band gap width of the band gap width of the material of film 322, the material of the light absorption film 322 of 342 lower section of green filter is small
In the band gap width of the material of the light absorption film 321 of 343 lower section of blue filter.
Specifically, with the semiconductor material of lesser band gap width (Energy band gap width), electricity therein
It is smaller that son by valence band is excited to the minimum energy that conduction band (Conduction band) must obtain, and is easy to be excited, therefore
Also it is easy to be absorbed into light therein.The semiconductor material of same thickness, the semiconductor material with smaller band gap width are logical
It often being capable of semiconductor material more light of the absorptance with bigger band gap width.
Specifically, the luminous intensity I of incident light position to be calculated in medium can be carried out using following luminous intensity equations
It calculates:
I=I0exp(-αx)；
Wherein, I is used to indicate the luminous intensity of incident light position to be calculated in medium；I0For indicating that incident light enters matchmaker
Original luminous intensity when Jie；α is for indicating the absorption coefficient of light；X propagates to by indicating incident light from incoming position described to based on
Calculate the propagation distance of position.
From the foregoing, it will be observed that the luminous intensity I and absorption coefficient of light α and propagation distance x of position to be calculated are related in medium, light
Absorption coefficient is higher, and propagation distance x is longer, and luminous intensity I is smaller, more facilitating the more light of absorption, to generate enough photoelectricity
Son.
Further, the absorption coefficient of light α can be calculated using following formula:
The π k/ of α=4 λ；
Wherein, k is related with the type of medium for the parameter of the attenuation degree of characterization luminous energy for indicating extinction coefficient；λ
For indicating the wavelength of incident light.
From the foregoing, it will be observed that under the premise of medium is consistent, absorption coefficient of light α and original luminous intensity I0It is unrelated, and and incident light
Wavelength X it is related, the wavelength X of the incident light is longer (for example, by using infrared ray), and the absorption coefficient of light α is smaller, causes to inhale
The light of receipts is fewer, it is difficult to generate enough photoelectrons.
In embodiments of the present invention, by selecting the semiconductor material of different band gap widths, it is equivalent to adjustment extinction coefficient
K, and then absorption coefficient of light α is adjusted, so that the light absorption film below the optical filter with different filtered colors has not
Same light transmittance.
Specifically, the material of the light absorption film can be selected from: SiGe, GaAs, PbS, PbSe, PbTe, GaSb with
And InN.
Wherein, the band gap width of GaAs is about 1.42eV, and the band gap width of PbS is about 0.3eV, and the band gap width of PbSe is about
For 0.28eV, the band gap width of PbTe is about 0.31eV, and the band gap width of GaSb is about 0.725eV, and the band gap width of InN is about
0.7eV, can be by selecting material appropriate, so that the light absorption film below the optical filter with different filtered colors has
Different light transmittances.
Preferably, the light absorption film can be formed using SiGe, and SiGe film is being formed using depositing operation
During, by adjusting the ratio of Ge in reaction source gas, form the light absorption film 221 with different band gap widths.Its
In, the content of Ge is higher, and band gap width is smaller.
Preferably due to which the band gap width of Si is about 1.12eV, it can choose the material that band gap width is less than Si, facilitate
Light absorption film is improved to the degree of absorption of light, reduces light transmittance.
In embodiments of the present invention, the thickness of the light absorption film below the optical filter with different filtered colors is identical,
And the band gap width of the material of the light absorption film 323 of 341 lower section of red filter is less than under the green filter 342
The band gap width of the material of the light absorption film 322 of side, the material of the light absorption film 322 of 342 lower section of green filter
Band gap width be less than 343 lower section of the blue filter light absorption film 321 material band gap width.Using the present invention
The scheme of embodiment can make longer wavelengths of light pass through the smaller light absorption film of band gap width, smaller due to having
The semiconductor material of bandwidth usually can absorb more light than the semiconductor material with bigger bandwidth, from
And longer wavelengths of light is made to be absorbed more incident photons, help to improve the sensitivity of described image sensor.
In embodiments of the present invention, by the way that light absorption film, the light in the region of the optical filter corresponding to different colours is arranged
Absorbing membrane has different light transmittances, and the wavelength for corresponding to the light of optical filter is longer, the light transmission of the light absorption film
Rate is lower, can make longer wavelengths of light during passing through imaging sensor, and the incident photon being pierced by is reduced, so that
The incident photon of absorption increases, to generate enough photoelectrons, improves the sensitivity of described image sensor.
In embodiments of the present invention, a kind of imaging sensor is additionally provided, referring to Fig.1 4, described image sensor can wrap
It includes: semiconductor substrate 200；Multiple pixel devices 202 are located in the semiconductor substrate 200；It is multiple that there are different filtered colors
Optical filter, be set to the surface of the semiconductor substrate 200；Wherein, each optical filter be located at its under pixel device it
Between be provided with light absorption film, and the light absorption film below the optical filter with different filtered colors has different light transmissions
The wavelength of light of rate, the filtered color is longer, and the light transmittance of the light absorption film is lower.
Further, the multiple optical filter with different filtered colors includes green filter 242, red filter
241 and blue filter 243, the material of the light absorption film below the optical filter with different filtered colors is identical, and institute
The thickness for stating the light absorption film 223 of 241 lower section of red filter is greater than the light absorption film of 242 lower section of green filter
222 thickness, the thickness of the light absorption film 222 of 242 lower section of green filter are greater than 243 lower section of blue filter
Light absorption film 221 thickness.
Further, the material of the light absorption film can be selected from: SiGe, GaAs, PbS, PbSe, PbTe, GaSb with
And InN.
Further, described image sensor can also include: filled layer, and the filled layer covers the light absorption film
A part, and expose the light absorption film below the optical filter of at least one filtered color；Wherein, the table of the filled layer
Face is flushed with the surface of the semiconductor substrate 200.
Further, the material of the filled layer can be selected from: silica, silicon nitride, amorphous carbon and amorphous silicon.
Further, the imaging sensor can also include: protective layer (not shown), cover the filled layer；Its
In, the filter matrix is located at the surface of the protective layer.
It is please referred to above and shown in Fig. 3 to Figure 14 about the principle of the imaging sensor, specific implementation and beneficial effect
The associated description of forming method about imaging sensor, details are not described herein again.
In embodiments of the present invention, a kind of imaging sensor is additionally provided, referring to Fig.1 5, described image sensor can wrap
It includes: semiconductor substrate 300；Multiple pixel devices 302 are located in the semiconductor substrate 300；It is multiple that there are different filtered colors
Optical filter, be set to the surface of the semiconductor substrate 300；Wherein, each optical filter be located at its under pixel device it
Between be provided with light absorption film, and the light absorption film below the optical filter with different filtered colors has different light transmissions
The wavelength of light of rate, the filtered color is longer, and the light transmittance of the light absorption film is lower.
Further, the multiple optical filter with different filtered colors includes green filter 342, red filter
341 and blue filter 343, the thickness of the light absorption film below the optical filter with different filtered colors is identical, and institute
The band gap width for stating the material of the light absorption film 323 of 341 lower section of red filter is less than 342 lower section of green filter
The band gap width of the material of light absorption film 322, the band of the material of the light absorption film 322 of 342 lower section of green filter
Gap width is less than the band gap width of the material of the light absorption film 321 of 343 lower section of blue filter.
Further, the material of the light absorption film can be selected from: SiGe, GaAs, PbS, PbSe, PbTe, GaSb with
And InN.
Further, described image sensor can also include: filled layer 314, and the filled layer 314 covers the light and inhales
A part of film is received, and exposes the light absorption film below the optical filter of at least one filtered color；Wherein, the filling
The surface of layer 314 is flushed with the surface of the semiconductor substrate 300.
Further, the material of the filled layer 314 can be selected from: silica, silicon nitride, amorphous carbon and amorphous
Silicon.
Further, the imaging sensor can also include: protective layer (not shown), cover the filled layer 314；
Wherein, the filter matrix is located at the surface of the protective layer.
It is please referred to above and shown in Fig. 3 to Figure 15 about the principle of the imaging sensor, specific implementation and beneficial effect
The associated description of forming method about imaging sensor, details are not described herein again.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (13)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate；
Multiple pixel devices are located in the semiconductor substrate；
Multiple optical filters with different filtered colors, are set to the surface of the semiconductor substrate；
Wherein, it is provided with light absorption film between each optical filter and pixel device under it, and there are different optical filtering face
Light absorption film below the optical filter of color has different light transmittances, and the wavelength of light of the filtered color is longer, the light
The light transmittance of absorbing membrane is lower.
2. imaging sensor according to claim 1, which is characterized in that the multiple optical filtering with different filtered colors
Device includes green filter, red filter and blue filter,
The material of light absorption film below optical filter with different filtered colors is identical, and below the red filter
The thickness of light absorption film is greater than the thickness of the light absorption film below the green filter, below the green filter
The thickness of light absorption film is greater than the thickness of the light absorption film below the blue filter.
3. imaging sensor according to claim 1, which is characterized in that the multiple optical filtering with different filtered colors
Device includes green filter, red filter and blue filter,
The thickness of light absorption film below optical filter with different filtered colors is identical, and below the red filter
The band gap width of the material of light absorption film is less than the band gap width of the material of the light absorption film below the green filter,
The band gap width of the material of light absorption film below the green filter is less than the light absorption below the blue filter
The band gap width of the material of film.
4. imaging sensor according to any one of claims 1 to 3, which is characterized in that the material of the light absorption film
It is selected from: SiGe, GaAs, PbS, PbSe, PbTe, GaSb and InN.
5. imaging sensor according to claim 1, which is characterized in that further include:
Filled layer, the filled layer cover a part of the light absorption film, and expose the filter of at least one filtered color
Light absorption film below light device；
Wherein, the surface of the filled layer is flushed with the surface of the semiconductor substrate.
6. imaging sensor according to claim 5, which is characterized in that the material of the filled layer is selected from: silica, nitrogen
SiClx, amorphous carbon and amorphous silicon.
7. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided, there is pixel device in the semiconductor substrate；
On the surface of the semiconductor substrate, multiple optical filters with different filtered colors are formed；
Wherein, it is provided with light absorption film between each optical filter and pixel device under it, and there are different optical filtering face
Light absorption film below the optical filter of color has different light transmittances, and the wavelength of light of the filtered color is longer, the light
The light transmittance of absorbing membrane is lower.
8. the forming method of imaging sensor according to claim 7, which is characterized in that multiple with not in the formation
Before the optical filter of filtered color, further includes:
The multilayer filled layer stacked is formed on the surface of the semiconductor substrate；
After one layer of filled layer of every formation, the multilayer filled layer that etching has currently been formed is to form groove, the position of the groove
It is identical as the corresponding position of optical filter of filtered color；
After forming the groove every time, light absorption film corresponding with the filtered color is filled into the groove；
Wherein, the table of the surface of later layer filled layer covering preceding layer filled layer and the light absorption film in preceding layer filled layer
Face, and when forming groove, the wavelength according to filtered color sequentially forms the optical filtering of various filtered colors from long sequence is short to
The corresponding groove of device.
9. the forming method of imaging sensor according to claim 8, which is characterized in that the multiple that there are different optical filterings
The optical filter of color includes green filter, red filter and blue filter, the optical filter with different filtered colors
The material of the light absorption film of lower section is identical, and the thickness of the light absorption film below the red filter is greater than the green
The thickness of the thickness of light absorption film below optical filter, the light absorption film below the green filter is greater than the blue
The thickness of light absorption film below optical filter.
10. the forming method of imaging sensor according to claim 7, which is characterized in that the formation is multiple to be had not
Before the optical filter of filtered color, further includes:
Form the filled layer for covering the semiconductor substrate；
Filled layer described in multiple etching is to form groove, position and the optical filtering of corresponding filtered color of the groove that etching is formed every time
The position of device is identical；
After forming the groove every time, light absorption film corresponding with the filtered color is filled into the groove.
11. the forming method of imaging sensor according to claim 10, which is characterized in that the multiple that there are different filters
The optical filter of light color includes green filter, red filter and blue filter, the optical filtering with different filtered colors
The thickness of light absorption film below device is identical, and the band gap width of the material of the light absorption film below the red filter
Light absorption less than the band gap width of the material of the light absorption film below the green filter, below the green filter
The band gap width of the material of film is less than the band gap width of the material of the light absorption film below the blue filter.
12. the forming method of imaging sensor according to any one of claims 8 to 11, which is characterized in that the filling
The material of layer is selected from: silica, silicon nitride, amorphous carbon and amorphous silicon.
13. according to the forming method of the described in any item imaging sensors of claim 7 to 11, which is characterized in that the light is inhaled
The material for receiving film is selected from: GaAs, PbS, PbSe, PbTe, GaSb and InN.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114046881A (en) * | 2021-11-15 | 2022-02-15 | 深圳知微创新技术有限公司 | High-sensitivity color sensor based on thin film transistor |
| CN117238941A (en) * | 2023-11-15 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Backside illuminated image sensor and preparation method thereof |
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| CN103227181A (en) * | 2012-01-27 | 2013-07-31 | 索尼公司 | Image sensor, production apparatus, production method, and imaging apparatus |
| US20140264690A1 (en) * | 2013-03-14 | 2014-09-18 | Kabushiki Kaisha Toshiba | Solid state imaging device and method for manufacturing solid state imaging device |
| CN108231816A (en) * | 2018-02-14 | 2018-06-29 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
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| CN103227181A (en) * | 2012-01-27 | 2013-07-31 | 索尼公司 | Image sensor, production apparatus, production method, and imaging apparatus |
| US20140264690A1 (en) * | 2013-03-14 | 2014-09-18 | Kabushiki Kaisha Toshiba | Solid state imaging device and method for manufacturing solid state imaging device |
| CN108231816A (en) * | 2018-02-14 | 2018-06-29 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114046881A (en) * | 2021-11-15 | 2022-02-15 | 深圳知微创新技术有限公司 | High-sensitivity color sensor based on thin film transistor |
| CN114046881B (en) * | 2021-11-15 | 2024-05-28 | 深圳知微创新技术有限公司 | High-sensitivity color sensor based on thin film transistor |
| CN117238941A (en) * | 2023-11-15 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Backside illuminated image sensor and preparation method thereof |
| CN117238941B (en) * | 2023-11-15 | 2024-02-20 | 合肥晶合集成电路股份有限公司 | Backside illuminated image sensor and preparation method thereof |
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