CN110379827A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN110379827A CN110379827A CN201910682536.9A CN201910682536A CN110379827A CN 110379827 A CN110379827 A CN 110379827A CN 201910682536 A CN201910682536 A CN 201910682536A CN 110379827 A CN110379827 A CN 110379827A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 239000004065 semiconductor Substances 0.000 claims abstract description 166
- 239000000463 material Substances 0.000 claims description 29
- 230000005622 photoelectricity Effects 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, which comprises the first semiconductor substrate and the second semiconductor substrate are provided；Catoptric arrangement is formed in the front of first semiconductor substrate and/or the second semiconductor substrate；The front in front and the second semiconductor substrate to first semiconductor substrate is bonded；Pixel device is formed at the back side of first semiconductor substrate or the second semiconductor substrate, the pixel device includes photodiode；Wherein, at least part photodiode is reflected back by the catoptric arrangement across the light of at least part photodiode.The present invention program can make transmitted light have an opportunity by double absorption, to increase the uptake of incident light.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor (Image Sensors) is the core component of picture pick-up device, by converting optical signals into telecommunications
Number realize image camera function.Since cmos image sensor (CMOS Image Sensor, CIS) has low-power consumption and high letter
Make an uproar than the advantages of, therefore be widely applied in various fields.
Especially in (Front-side Illumination, FSI) CIS front-illuminated, the quantum efficiency ratio of the long glistening light of waves is absorbed
It is lower, because the absorption coefficient of semiconductor substrate (for example, silicon substrate) reduces as the wavelength of incident light increases, such as
The light that 700nm is absorbed in silicon needs the absorption path of 5um.Therefore having most light when absorbing long wave light penetrates photoelectricity two
The region pole pipe (Photo Diode, PD), causes the absorptivity to the long glistening light of waves lower.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, can transmitted light be had
Chance is by double absorption, to increase the uptake of incident light.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, comprising: provide
First semiconductor substrate and the second semiconductor substrate；First semiconductor substrate and/or the second semiconductor substrate just
Face forms catoptric arrangement；The front in front and the second semiconductor substrate to first semiconductor substrate is bonded；?
The back side of first semiconductor substrate or the second semiconductor substrate forms pixel device, and the pixel device includes photoelectricity two
Pole pipe；Wherein, at least part light is reflected back by the catoptric arrangement across the light of at least part photodiode
Electric diode.
Optionally, it is formed in the front of at least one of first semiconductor substrate and the second semiconductor substrate anti-
Penetrating structure includes: to form the first underlying dielectric layer in the front of first semiconductor substrate；Form the first reflecting layer, described
One reflecting layer covers first underlying dielectric layer；Form top layer dielectric layer, top layer dielectric layer covering first reflection
Layer.
Optionally, the front to first semiconductor substrate and the front of the second semiconductor substrate carry out bonding packet
It includes: forming the first bonding medium layer in the front of second semiconductor substrate；To first semiconductor substrate front with
And second the front of semiconductor substrate stack and place, to carry out key based on the top layer dielectric layer and the first bonding medium layer
It closes.
Optionally, it is formed in the front of at least one of first semiconductor substrate and the second semiconductor substrate anti-
Penetrating structure includes: to form the second underlying dielectric layer in the front of first semiconductor substrate；Form the second reflecting layer, described
Two reflecting layer cover second underlying dielectric layer；Third underlying dielectric layer is formed in the front of second semiconductor substrate；
Third reflecting layer is formed, the third reflecting layer covers the third underlying dielectric layer.
Optionally, the front to first semiconductor substrate and the front of the second semiconductor substrate carry out bonding packet
Include: the front in front and the second semiconductor substrate to first semiconductor substrate, which stacks, places, to be based on described second
Reflecting layer and the third reflecting layer are bonded.
Optionally, it is formed in the front of at least one of first semiconductor substrate and the second semiconductor substrate anti-
Penetrating structure includes: to form the 4th underlying dielectric layer in the front of first semiconductor substrate；To the 4th underlying dielectric layer
It performs etching, to form reflective trenches；Fill reflecting material into the reflective trenches, the top surface of the reflecting material with
The front face surface of first semiconductor substrate flushes.
Optionally, the front to first semiconductor substrate and the front of the second semiconductor substrate carry out bonding packet
It includes: forming the second bonding medium layer in the front of second semiconductor substrate；To first semiconductor substrate front with
And second the front of semiconductor substrate stack and place, with based on the 4th underlying dielectric layer and the second bonding medium layer into
Line unit closes.
Optionally, the material of the catoptric arrangement is selected from following one or more: titanium, copper, aluminium, tungsten and tantalum.
Optionally, described image sensor is imaging sensor front-illuminated.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: the first the half of bonding lead
Body substrate and the second semiconductor substrate, wherein bonding face is respectively the front and the second half of first semiconductor substrate
The front of conductor substrate；Catoptric arrangement, positioned at the front of first semiconductor substrate and/or the second semiconductor substrate；Pixel
Device, positioned at the back side of first semiconductor substrate or the second semiconductor substrate, the pixel device includes two pole of photoelectricity
Pipe；Wherein, at least part photoelectricity is reflected back by the catoptric arrangement across the light of at least part photodiode
Diode.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, the first semiconductor substrate and the second semiconductor substrate are provided；It is led described the first half
The front of body substrate and/or the second semiconductor substrate forms catoptric arrangement；Front to first semiconductor substrate and
The front of two semiconductor substrates is bonded；Pixel is formed at the back side of first semiconductor substrate or the second semiconductor substrate
Device, the pixel device include photodiode；Wherein, across the light of at least part photodiode by described anti-
It penetrates structure and is reflected back at least part photodiode.Using the above scheme, by the way that catoptric arrangement is arranged, so that passing through extremely
The light of few a part of photodiode is reflected back at least part photodiode by the catoptric arrangement, can make
Transmitted light has an opportunity by double absorption, to increase the uptake of incident light, improves quantum efficiency (Quantum
Efficiency, QE) and full-well capacity.
Further, the catoptric arrangement is set using various ways, facilitates user and selects as the case may be, improve and use
Family convenience.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor in the prior art；
Fig. 2 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention；
Fig. 3 to Fig. 5 is the corresponding device of each step in the forming method of the first imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure；
Fig. 6 to Fig. 8 is the corresponding device of each step in the forming method of second of imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure；
Fig. 9 to Figure 13 is the corresponding device of each step in the forming method of the third imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure.
Specific embodiment
As previously mentioned, the quantum efficiency for absorbing the long glistening light of waves is relatively low in existing imaging sensor, therefore grown absorbing
Most smooth reach throught photodiode region is had when the glistening light of waves, influences quantum efficiency and full-well capacity.
Referring to Fig.1, Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor in the prior art.
Described image sensor may include semiconductor substrate 100, isolation structure 122 and photodiode 120.
Wherein, the isolation structure 122 is located in the semiconductor substrate 100, for adjacent photodiode to be isolated
120, the photodiode 120 also is located in the semiconductor substrate 100.
On the surface of the semiconductor substrate 100, described image sensor can also include metal interconnecting layer 150, described
It is can wrap in metal interconnecting layer 150 containing metal interconnection structure 152.
On the surface of the metal interconnecting layer 150, described image sensor can also include camera lens (Micro-lens)
154。
It should be pointed out that not drawn in Fig. 1 in order to avoid Fig. 1 is excessively many and diverse and marking out described image sensing
All device architectures of device.
As shown in Figure 1, arrow is used to indicate the incident path of incident light, such as the wavelength of light a can be most short, light c
Wavelength can be with longest, the wavelength of light b can wavelength between light a and light c.
The present inventor has found after study, under the premise of medium (i.e. photodiode 120) is consistent, light absorption
Factor alpha is related with the wavelength X of incident light, and the wavelength X of the incident light is longer (to be entered for example, by using feux rouges incidence or infrared ray
Penetrate), the absorption coefficient of light α is smaller, causes the light absorbed fewer, it is difficult to generate enough photoelectrons.
Further, in above-mentioned imaging sensor, limit of the depth of photodiode 120 by ion implantation technology
System, it is difficult to unlimitedly increase.Specifically, the technological ability based on current ion implanting, the doping depth of photodiode 120
At 2.5 μm or so, absorbing amount is less, it is difficult to generate enough photoelectrons, cause the sensitivity of imaging sensor lower.
In embodiments of the present invention, the first semiconductor substrate and the second semiconductor substrate are provided；It is led described the first half
The front of body substrate and/or the second semiconductor substrate forms catoptric arrangement；Front to first semiconductor substrate and
The front of two semiconductor substrates is bonded；Pixel is formed at the back side of first semiconductor substrate or the second semiconductor substrate
Device, the pixel device include photodiode；Wherein, across the light of at least part photodiode by described anti-
It penetrates structure and is reflected back at least part photodiode.Using the above scheme, by the way that catoptric arrangement is arranged, so that passing through extremely
The light of few a part of photodiode is reflected back at least part photodiode by the catoptric arrangement, can make
Transmitted light has an opportunity by double absorption, to increase the uptake of incident light, improves quantum efficiency and full-well capacity.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 2, Fig. 2 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S21 to step S24:
Step S21: the first semiconductor substrate and the second semiconductor substrate are provided；
Step S22: catoptric arrangement is formed in the front of first semiconductor substrate and/or the second semiconductor substrate；
Step S23: the front in front and the second semiconductor substrate to first semiconductor substrate is bonded；
Step S24: pixel device, the picture are formed at the back side of first semiconductor substrate or the second semiconductor substrate
Plain device includes photodiode；
Wherein, described at least part is reflected back by the catoptric arrangement across the light of at least part photodiode
Photodiode.
Above-mentioned each step is illustrated below with reference to Fig. 3 to Figure 13.
Fig. 3 to Fig. 5 is the corresponding device of each step in the forming method of the first imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure.
Referring to Fig. 3, the first semiconductor substrate 200 is provided, forms the first bottom in the front of first semiconductor substrate 200
Layer dielectric layer 202, forms the first reflecting layer 204, and first reflecting layer 204 covers first underlying dielectric layer 202, is formed
Top layer dielectric layer 206, the top layer dielectric layer 206 cover first reflecting layer 204.
It should be pointed out that it is anti-that the catoptric arrangement may include described first in the first described imaging sensor
Penetrate layer 204.
Wherein, first semiconductor substrate 200 can be silicon substrate or the material of first semiconductor substrate 200
Material can also be the materials appropriate applied to imaging sensor such as germanium, SiGe, silicon carbide, GaAs or gallium indium, described
First semiconductor substrate 200 can also be the silicon substrate of insulator surface or the germanium substrate of insulator surface, or growth
There is the substrate of epitaxial layer (Epitaxy layer, Epi layer).Preferably, first semiconductor substrate 200 can be light
The semiconductor substrate of doping, and doping type is opposite with drain region.It specifically, can be by first semiconductor substrate 200
Ion implanting is carried out, realizes deep trap doping (Deep Well Implant).
The material of first underlying dielectric layer 202 and top layer dielectric layer 206 for example can be silicon nitride and silica
Stack layer, can also be silicon nitride layer or silicon oxide layer.Wherein, the silica for example can be SiO2, the silicon nitride
It such as can be Si3N4。
The material of the catoptric arrangement (namely first reflecting layer 204) can be selected from following one or more: titanium, copper, aluminium,
Tungsten and tantalum.
Preferably, the first reflecting layer 204 can be formed using copper or tungsten, with good and with high hardness using its conductance property
Feature improves electric property.
Referring to Fig. 4, the first bonding medium layer 212 is formed in the front of second semiconductor substrate 210.
In specific implementation, more detailed contents in relation to the second semiconductor substrate 210 and the first bonding medium layer 212
The description of the first semiconductor substrate 200 and the first underlying dielectric layer 202 in referring to figure 3. is executed, no longer superfluous herein
It states.
Referring to Fig. 5, the front in front and the second semiconductor substrate 210 to first semiconductor substrate 200 is stacked
It places, to be bonded based on the top layer dielectric layer 206 and the first bonding medium layer 212.
In embodiments of the present invention, by carrying out key to the top layer dielectric layer 206 and the first bonding medium layer 212
It closes, existing dielectric layer bonding technology can be multiplexed, since such technique have been relatively mature, help to obtain preferable bonding
Performance.
It should be pointed out that in embodiments of the present invention, for specific dielectric layer bonding technology selection with no restrictions.
Fig. 6 to Fig. 8 is the corresponding device of each step in the forming method of second of imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure.
Referring to Fig. 6, the second underlying dielectric layer 302 is formed in the front of first semiconductor substrate 300；It is anti-to form second
Layer 304 is penetrated, second reflecting layer 304 covers second underlying dielectric layer 302.
In specific implementation, more detailed contents in relation to the first semiconductor substrate 300 and the second underlying dielectric layer 302
The description of the first semiconductor substrate 200 and the first underlying dielectric layer 202 in referring to figure 3. is executed, no longer superfluous herein
It states.
Referring to Fig. 7, third underlying dielectric layer 312 is formed in the front of second semiconductor substrate 310；It is anti-to form third
Layer 314 is penetrated, the third reflecting layer 314 covers the third underlying dielectric layer 312.
In specific implementation, more detailed contents in relation to the second semiconductor substrate 310 and third underlying dielectric layer 312
The description of the first semiconductor substrate 200 and the first underlying dielectric layer 202 in referring to figure 3. is executed, no longer superfluous herein
It states.
It should be pointed out that it is anti-that the catoptric arrangement may include described second in second of imaging sensor
Penetrate layer 304 and third reflecting layer 314.
The material of the catoptric arrangement (namely the second reflecting layer 304 and third reflecting layer 314) can be selected from next
Item is multinomial: titanium, copper, aluminium, tungsten and tantalum.
Preferably, the second reflecting layer 304 and third reflecting layer 314 can be formed using copper or tungsten, to utilize its conductance
Characteristic is good and feature with high hardness, improves electric property.
Referring to Fig. 8, the front in front and the second semiconductor substrate 310 to first semiconductor substrate 300 is stacked
It places, to be bonded based on second reflecting layer 304 and third reflecting layer 314.
In embodiments of the present invention, it by being bonded to the second reflecting layer 304 and third reflecting layer 314, can adopt
It is realized and is bonded with existing metal bonding technology (such as Cu-Cu wafer bond techniques), so as to utilize metal bonding technique
The advantages of bringing for imaging sensor improves device performance.
It should be pointed out that in embodiments of the present invention, for specific metal bonding technique selection with no restrictions.
Fig. 9 to Figure 13 is the corresponding device of each step in the forming method of the third imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure.
Referring to Fig. 9, the 4th underlying dielectric layer 402 is formed in the front of first semiconductor substrate 400；To the described 4th
Underlying dielectric layer 402 performs etching, to form reflective trenches 441.
Specifically, patterned mask layer 461 can be formed on the surface of the 4th underlying dielectric layer 402, with described
Patterned mask layer 461 is exposure mask, is performed etching to the 4th underlying dielectric layer 402, to form reflective trenches 441.
In specific implementation, more detailed contents in relation to the first semiconductor substrate 400 and the 4th underlying dielectric layer 402
The description of the first semiconductor substrate 200 and the first underlying dielectric layer 202 in referring to figure 3. is executed, no longer superfluous herein
It states.
Reflecting material 404, the reflecting material 404 are filled in 0, Xiang Suoshu reflective trenches 441 (referring to Fig. 9) referring to Fig.1
Top surface flushed with the front face surface of first semiconductor substrate 400.
It should be pointed out that the catoptric arrangement may include the reflection of flood in the third described imaging sensor
Material 404.Such as when the reflective trenches are multiple independent grooves, fill the multiple reflex blocks formed after reflecting material 404
The catoptric arrangement can be referred to as.
The material of the catoptric arrangement (namely reflecting material 404) can be selected from following one or more: titanium, copper, aluminium, tungsten
And tantalum.
Preferably, reflecting material 404 can be formed using copper or tungsten, to utilize its conductance property good and spy with high hardness
Point improves electric property.
It should be pointed out that the thickness of the reflecting material 404 should not be too small, otherwise reflected intensity is lower, it is difficult to real
Existing goal of the invention；The thickness of the reflecting material 404 should not be excessive, is otherwise easy to increase production cost, increases metallic pollution
Risk.Wherein, the direction of the thickness is the direction perpendicular to the surface of first semiconductor substrate 400.
As a unrestricted example, the thickness of the reflecting material 404 can be 100 μm to 3mm.
Referring to Fig.1 1, the second bonding medium layer 412 is formed in the front of second semiconductor substrate 410.
In specific implementation, more detailed contents in relation to the second semiconductor substrate 410 and the second bonding medium layer 412
The description of the first semiconductor substrate 200 and the first underlying dielectric layer 202 in referring to figure 3. is executed, no longer superfluous herein
It states.
Referring to Fig.1 2, the front in front and the second semiconductor substrate 410 to first semiconductor substrate 400 stacks
It places, to be bonded based on the 4th underlying dielectric layer 402 and the second bonding medium layer 412.
In embodiments of the present invention, by the 4th underlying dielectric layer 402 and the second bonding medium layer 412 into
Line unit closes, and since reflecting material 404 is only filled in reflective trenches, the surface of the 4th underlying dielectric layer 402 includes a large amount of Jie
Matter layer material region, therefore it can be multiplexed existing dielectric layer bonding technology, compared to metal bonding technique, due to such technique
It is more mature, help to obtain better bonding performance；Further, the reflecting material of use is less, helps to reach cost
Balance between control and performance boost.
In embodiments of the present invention, the catoptric arrangement is set using various ways, facilitates user as the case may be
Selection improves convenience for users.
It should be pointed out that in embodiments of the present invention, for specific dielectric layer bonding technology selection with no restrictions.
Referring to Fig.1 3, the first semiconductor substrate 400 and the second semiconductor substrate 410 being bonded using in Figure 12 are as lining
Bottom forms pixel device at the back side of the second semiconductor substrate 410, and the pixel device includes photodiode 420,
In, the light across at least part photodiode 420 is reflected back at least part photoelectricity two by the catoptric arrangement
Pole pipe 420.
Which it is used to indicate it should be pointed out that being reflected back at least part photodiode 420, from two pole of photoelectricity
The incident light of pipe 420, which photodiode 420 be reflected back by the catoptric arrangement.
Specifically, isolation structure 422 and photodiode 420 are formed at the back side of the second semiconductor substrate 410.
Wherein, the isolation structure 422 is located in second semiconductor substrate 410, for adjacent photoelectricity two to be isolated
Pole pipe 420, the photodiode 420 also are located in second semiconductor substrate 410.
Surface in second semiconductor substrate 410, described image sensor can also include metal interconnecting layer
450, it can wrap containing metal interconnection structure 452 in the metal interconnecting layer 450.
On the surface of the metal interconnecting layer 450, described image sensor can also include camera lens 454.
As shown in figure 13, arrow is used to indicate the incident path of incident light, such as the wavelength of light a can be most short, light c
Wavelength can be with longest, the wavelength of light b can wavelength between light a and light c.
It is understood that light b and c can be reflected back two pole of photoelectricity by catoptric arrangement after reach throught photodiode 420
Pipe 420, to generate enough photoelectrons, improves the figure so that photodiode 420 absorbs enough incident photons
As the sensitivity of sensor, and improve the full-well capacity of photodiode 420.
It should be pointed out that in embodiments of the present invention, can also be formed and be isolated at the back side of the first semiconductor substrate 400
Structure 422 and photodiode 420.
In embodiments of the present invention, by the way that catoptric arrangement is arranged, so that passing through the light of at least part photodiode 420
Line is reflected back at least part photodiode 420 by the catoptric arrangement, transmitted light can be made to have an opportunity secondary
It absorbs, to increase the uptake of incident light, improves quantum efficiency and full-well capacity.
Further, described image sensor can be imaging sensor front-illuminated.
In embodiments of the present invention, it is imaging sensor front-illuminated by setting imaging sensor, can reduces to the back side
The demand of incident ray improves the realization effect of the embodiment of the present invention so as to which the reflecting material of larger area is arranged.
In embodiments of the present invention, a kind of imaging sensor is provided, as shown in figure 5, may include: the first the half of bonding
Conductor substrate 200 and the second semiconductor substrate 210, wherein bonding face is respectively the front of first semiconductor substrate 200
And second semiconductor substrate 210 front；Catoptric arrangement is located at first semiconductor substrate 200 and/or the second semiconductor
The front of substrate 210；Pixel device, positioned at the back side of first semiconductor substrate 200 or the second semiconductor substrate 210, institute
Stating pixel device includes photodiode；Wherein, across the light of at least part photodiode by the catoptric arrangement
It is reflected back at least part photodiode.
Further, described image sensor can also include: the first underlying dielectric layer 202, lead positioned at described the first half
The front of body substrate 200；First reflecting layer 204 covers first underlying dielectric layer 202；Top layer dielectric layer 206 covers institute
State the first reflecting layer 204.Wherein, the catoptric arrangement can be first reflecting layer 204.
Further, referring to Fig. 8, described image sensor can also include: the second underlying dielectric layer 302, be located at described
The front of first semiconductor substrate 300；Second reflecting layer 304 covers second underlying dielectric layer 302；Third underlying dielectric
Layer 312, positioned at the front of second semiconductor substrate 310；Third reflecting layer 314 covers the third underlying dielectric layer
312.Wherein, the catoptric arrangement can be second reflecting layer 304 and third reflecting layer 314.
Further, referring to Fig.1 3, described image sensor can also include: the 4th underlying dielectric layer 402, be located at described
The front of first semiconductor substrate 400；Reflective trenches are located in the 4th underlying dielectric layer 402；Reflecting material 404, is located at
In the reflective trenches, the top surface of the reflecting material 404 and the front face surface of first semiconductor substrate 400 are neat
It is flat.Wherein, the catoptric arrangement can be the reflecting material 404.
It is please referred to above and shown in Fig. 2 to Figure 13 about the principle of the imaging sensor, specific implementation and beneficial effect
The associated description of forming method about imaging sensor, details are not described herein again.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of forming method of imaging sensor characterized by comprising
First semiconductor substrate and the second semiconductor substrate are provided；
Catoptric arrangement is formed in the front of first semiconductor substrate and/or the second semiconductor substrate；
The front in front and the second semiconductor substrate to first semiconductor substrate is bonded；
Pixel device is formed at the back side of first semiconductor substrate or the second semiconductor substrate, the pixel device includes
Photodiode；
Wherein, at least part photoelectricity is reflected back by the catoptric arrangement across the light of at least part photodiode
Diode.
2. the forming method of imaging sensor according to claim 1, which is characterized in that in first semiconductor substrate
And second the front of at least one of semiconductor substrate form catoptric arrangement and include:
The first underlying dielectric layer is formed in the front of first semiconductor substrate；
The first reflecting layer is formed, first reflecting layer covers first underlying dielectric layer；
Top layer dielectric layer is formed, the top layer dielectric layer covers first reflecting layer.
3. the forming method of imaging sensor according to claim 2, which is characterized in that first semiconductor substrate
Front and the second semiconductor substrate front carry out bonding include:
The first bonding medium layer is formed in the front of second semiconductor substrate；
The front in front and the second semiconductor substrate to first semiconductor substrate, which stacks, places, to be based on the top layer
Dielectric layer and the first bonding medium layer are bonded.
4. the forming method of imaging sensor according to claim 1, which is characterized in that in first semiconductor substrate
And second the front of at least one of semiconductor substrate form catoptric arrangement and include:
The second underlying dielectric layer is formed in the front of first semiconductor substrate；
The second reflecting layer is formed, second reflecting layer covers second underlying dielectric layer；
Third underlying dielectric layer is formed in the front of second semiconductor substrate；
Third reflecting layer is formed, the third reflecting layer covers the third underlying dielectric layer.
5. the forming method of imaging sensor according to claim 4, which is characterized in that first semiconductor substrate
Front and the second semiconductor substrate front carry out bonding include:
The front in front and the second semiconductor substrate to first semiconductor substrate, which stacks, places, to be based on described second
Reflecting layer and the third reflecting layer are bonded.
6. the forming method of imaging sensor according to claim 1, which is characterized in that in first semiconductor substrate
And second the front of at least one of semiconductor substrate form catoptric arrangement and include:
The 4th underlying dielectric layer is formed in the front of first semiconductor substrate；
4th underlying dielectric layer is performed etching, to form reflective trenches；
Reflecting material, the top surface of the reflecting material and first semiconductor substrate are filled into the reflective trenches
Front face surface flushes.
7. the forming method of imaging sensor according to claim 6, which is characterized in that first semiconductor substrate
Front and the second semiconductor substrate front carry out bonding include:
The second bonding medium layer is formed in the front of second semiconductor substrate；
The front in front and the second semiconductor substrate to first semiconductor substrate, which stacks, places, to be based on the described 4th
Underlying dielectric layer and the second bonding medium layer are bonded.
8. the forming method of imaging sensor according to claim 1, which is characterized in that the material of the catoptric arrangement selects
From following one or more: titanium, copper, aluminium, tungsten and tantalum.
9. the forming method of imaging sensor according to claim 1, which is characterized in that described image sensor is preceding photograph
Formula imaging sensor.
10. a kind of imaging sensor characterized by comprising
The first semiconductor substrate and the second semiconductor substrate of bonding, wherein bonding face is respectively the first semiconductor lining
The front at bottom and the front of the second semiconductor substrate；
Catoptric arrangement, positioned at the front of first semiconductor substrate and/or the second semiconductor substrate；
Pixel device, positioned at the back side of first semiconductor substrate or the second semiconductor substrate, the pixel device includes
Photodiode；
Wherein, at least part photoelectricity is reflected back by the catoptric arrangement across the light of at least part photodiode
Diode.
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| CN113161377A (en) * | 2021-05-07 | 2021-07-23 | 上海芯物科技有限公司 | Image sensor and manufacturing method thereof |
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Application publication date: 20191025 |