CN109300779A - A kind of processing method and processing device of silicon wafer - Google Patents
A kind of processing method and processing device of silicon wafer Download PDFInfo
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- CN109300779A CN109300779A CN201810995535.5A CN201810995535A CN109300779A CN 109300779 A CN109300779 A CN 109300779A CN 201810995535 A CN201810995535 A CN 201810995535A CN 109300779 A CN109300779 A CN 109300779A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 141
- 239000010703 silicon Substances 0.000 title claims abstract description 141
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 98
- 238000000608 laser ablation Methods 0.000 claims abstract description 10
- 230000007246 mechanism Effects 0.000 claims description 10
- 241000931526 Acer campestre Species 0.000 claims description 8
- 230000007723 transport mechanism Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 claims 16
- 238000000034 method Methods 0.000 abstract description 14
- 238000002679 ablation Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of processing methods of silicon wafer, the following steps are included: providing silicon wafer, there is doped region in the side of the silicon wafer, in the laser irradiation to optical system that laser generator is issued, the route of laser is changed and is irradiated to by optical system the side of silicon wafer, at least part of the doped region of the side of silicon wafer is removed by way of laser ablation silicon chip side.This method removes the doped region of side by way of ablation sample side, avoids cell piece short circuit, ensure that cell piece front edge appearance is good while not influencing cell piece photoelectric conversion efficiency.A kind of processing unit of silicon wafer is also disclosed, processing unit equipment volume is small, low energy consumption for this, highly-safe, without environmental hazard.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of processing method and processing device of silicon wafer.
Background technique
Photovoltaic technology is the technology converted solar energy into electrical energy using the p-n junction diode of large area.It is making
It needs to carry out the wherein one side of the substrate silicon wafer of p-type or n-type doping during solar battery opposite with substrate doping type
Electrical doping form p-n junction, while part high-efficiency battery piece also needs to carry out another side with substrate doping with electrically
Doping be passivated and improve metallized contact.Either use diffusion furnace, ion implantation apparatus or APCVD (atmospheric pressure
Learn vapor deposition) etc. equipment be doped, the reverse side in face is even adulterated in the side for being all inevitably doped to silicon wafer, and
Form doped region.If cell piece front and back short circuit will be will lead to without processing to doped region, to influence
Cell piece efficiency.
Currently, industry mainly uses wet etching or dry etching to perform etching cell piece.Wherein wet etching uses
Chemical method, and dry etching then uses the physical method of plasma bombardment, two methods not can avoid to battery front side
Influence, therefore can there are problems that influence battery conversion efficiency, also can cause bad order to battery front side edge.In addition,
Occupation area of equipment used in both methods is big, and energy consumption is high, and all there is safety and environmentally friendly hidden danger.
In recent years, industry also starts the method for occurring performing etching battery edge using laser, although device therefor
The adverse effect such as occupation area of equipment, energy consumption and safety and environmental protection is effectively improved, but existing method is by laser pair
Battery front surface edge carries out ablation to cut off short-circuit loop (as shown in Figure 9), therefore still remains influence battery conversion efficiency
The problem of with battery appearance.
Summary of the invention
The present invention provides a kind of processing method and processing devices of silicon wafer, to solve in the prior art by laser to battery
Front surface edge carries out ablation and cuts off short-circuit loop, therefore still remains and influence asking for battery conversion efficiency and battery appearance
Topic.
Specifically, including technical solution below:
In a first aspect, the present invention provides a kind of processing methods of silicon wafer, comprising the following steps:
Silicon wafer is provided, there is doped region in the side of the silicon wafer,
In the laser irradiation to optical system that laser generator is issued, change by route of the optical system to laser
The side for becoming and being irradiated to silicon wafer removes the doped region of the side of silicon wafer at least by way of laser ablation silicon chip side
A part.
Optionally, the laser generator is pulsed laser, and optical maser wavelength is 100~10000nm, and pulse repeats frequency
Rate is 0~100MHz, pulse width 10-15~10-4S, average laser power are greater than 1W.
Optionally, the silicon wafer is silicon wafer in manufacturing process or the silicon wafer of solar battery sheet is made.
Optionally, it is the rectangular or quasi- rectangular of 50mm~200mm that the shape of the silicon wafer, which is side length,.
Second aspect, the present invention provides a kind of processing units of silicon wafer, including workbench, one or more are for placing
Sample stage, optical system and the laser generator of silicon wafer, the sample stage and the optical system are arranged on the workbench,
The top of the workbench is arranged in the laser generator.
Optionally, the laser generator is pulsed laser, and optical maser wavelength is 100~10000nm, and pulse repeats frequency
Rate is 0~100MHz, pulse width 10-15~10-4S, average laser power are greater than 1W.
Optionally, the sample stage is fixed sample stage, removable sample stage, rotatable sample platform or moves and can revolve
Sample transfer sample platform.
Optionally, transport mechanism is additionally provided on the workbench, the sample stage is arranged in the transport mechanism, transmission
Mechanism is used for mobile example platform and the sample on sample stage, so that the laser for enabling laser generator to issue passes through optics
The effect of system is irradiated to the side of sample (silicon wafer), to remove at least one of the doped region of the side of sample (silicon wafer)
Point.
Optionally, the laser generator is equipped with the galvanometer of adjustable angle.
The laser generator makes the laser irradiation of laser generator sending to the different location of optical system by galvanometer
To be irradiated to the different location of silicon chip side, the doped region of silicon chip side is removed by way of laser ablation silicon chip side
Domain.
Optionally, the optical system is the nonadjustable fixed optical system of angle, and the optical system is equipped with angle
Adjustable galvanometer.
In the laser irradiation to optical system that the laser generator issues, the optical system is become by the angle of galvanometer
Change the laser irradiation for issuing laser generator to the different location of silicon chip side, is gone by way of laser ablation silicon chip side
Except the doped region of silicon chip side.
Further, the laser generator is equipped with the galvanometer of adjustable angle, also is provided with angle in the optical system
Adjustable galvanometer.
Optionally, at least one side of the sample stage is arranged in the optical system.
Optionally, the optical system be include one of lens, reflecting mirror, prism and diaphragm etc. or a variety of optics member
The system that part is combined into according to certain combination order, to realize the purpose for changing laser optical path.
Further, it is additionally provided with sample protection mechanism on the sample stage, to ensure that laser will not be ablated to silicon wafer just
Face.
The invention has the advantages that
(1) processing method of silicon wafer of the present invention removes the diffusion region of side by way of ablation sample side, avoids
Cell piece short circuit, ensure that cell piece front edge appearance is good while not influencing cell piece photoelectric conversion efficiency；
(2) the processing unit equipment volume of silicon wafer of the present invention is small, low energy consumption, highly-safe, without environmental hazard.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.
Fig. 1 is the processing device structure diagram of the silicon wafer in embodiment 1-2；
Fig. 2 is the top view of the workbench of the processing unit of the silicon wafer in embodiment 1；
Fig. 3 is the top view of the workbench of the processing unit of silicon wafer in embodiment 2；
Fig. 4 is the processing device structure diagram of the silicon wafer in embodiment 3-6；
Fig. 5 is the top view of the workbench of the processing unit of silicon wafer in embodiment 3；
The top view of the workbench of the processing unit of silicon wafer in Fig. 6 embodiment 4-6；
Fig. 7 is the processing device structure diagram of the silicon wafer in embodiment 7；
Fig. 8 is in embodiment 1-7 using the structural schematic diagram of the cell piece before the method for the present invention processing；
Fig. 9 is the structural schematic diagram for carving method treated cell piece in side in background technique using conventional laser；
Using the structural schematic diagram of the method for the present invention treated cell piece in Figure 10 embodiment 1-7；
Appended drawing reference in figure respectively indicates:
1 is workbench；
2 be sample stage；
3 be optical system；
4 be laser generator；
7 be protection mechanism；
8 be silicon wafer；
81 be silicon substrate；
82 be front side emitter pole；
83 be front passivating film；
84 be front electrode；
85 be side doped region；
86 be backside passivation film；
87 be rear electrode；
88 be laser ablated region；
89 be back side doped region.
Specific embodiment
To keep technical solution of the present invention and advantage clearer, below in conjunction with attached drawing to embodiment of the present invention make into
One step it is described in detail.Unless otherwise defined, all technical terms used in the embodiment of the present invention all have and art technology
The normally understood identical meaning of personnel.
Existing method is to carry out ablation to battery front surface edge to cut off short-circuit loop by laser, therefore still remain
The problem of influencing battery conversion efficiency and battery appearance.
Based on the above, the embodiment of the invention provides a kind of silicon slice processing method and device, this method utilizes silicon wafer
Laser generator in processing unit issues in laser irradiation to optical system, is irradiated to by optical system to the change of optical path
The side of silicon wafer removes the doped region of silicon chip side by way of ablation silicon chip side, turns not influencing cell piece photoelectricity
It ensure that cell piece front edge appearance is good while changing efficiency.
It about optical system of the invention, is not particularly limited, as long as the optics of the optical path of laser can be changed
Device, element, equipment, reflecting mirror, diaphotoscope and combinations thereof.That is, the effect of the optical system in the present invention is
Change the laser that laser generator issues.
In the laser irradiation to optical system that the laser generator issues, the optical system can pass through the angle of galvanometer
The laser irradiation that degree variation issues laser generator passes through the side of laser ablation silicon chip side to the different location of silicon chip side
The doped region of formula removal silicon chip side.Galvanometer herein can be the galvanometer that above-mentioned effect arbitrarily can be achieved, one of them
Galvanometer is achieved in that the galvanometer is laser galvanometer, by X-Y optical scanning head, electric drive amplifier and optical reflection
Eyeglass composition.In addition, the galvanometer also can choose other implementations.Further, it can be equipped on the laser generator
The galvanometer of adjustable angle also is provided with the galvanometer of adjustable angle in the optical system；At this point, not only on laser generator, and
And the correlated performance of laser can be adjusted in optical system, such as adjust laser direction of advance etc..
As shown in Figure 1, and combine Fig. 2-8 and Figure 10, the processing method of the silicon wafer, comprising the following steps:
Silicon wafer 8 is provided, there is doped region 85 in the side of silicon wafer 8,
In the laser irradiation that laser generator 4 is issued to optical system 3, by optical system 3 to the route of laser into
Row changes and is irradiated to the side of silicon wafer 8, and the doped region of 8 side of silicon wafer is removed by way of 8 side of laser ablation silicon wafer
At least part in domain 85.Optionally, laser generator 4 is pulsed laser, and optical maser wavelength is 100~10000nm, arteries and veins
Rushing repetition rate is 0~100MHz, pulse width 10-15~10-4S, average laser power are greater than 1W.
Optionally, silicon wafer is silicon wafer in manufacturing process or the silicon wafer of solar battery sheet is made.
Optionally, it is the rectangular or quasi- rectangular of 50mm~200mm that the shape of silicon wafer, which is side length,.
Preferably, the processing unit of the silicon wafer used in above-mentioned silicon slice processing method, including workbench 1, one or more
For placing sample stage 2, optical system 3 and the laser generator 4 of silicon wafer 8, sample stage 2 and optical system 3 are arranged in workbench 1
On, the top of workbench 1 is arranged in laser generator 4.
Optionally, laser generator 4 is pulsed laser, and optical maser wavelength is 100~10000nm, pulse recurrence frequency
For 0~100MHz, pulse width 10-15~10-4s, average laser power is greater than 1W.
Optionally, sample stage 2 is fixed sample stage, removable sample stage, rotatable sample platform or removable and rotatable
Sample stage；Or transport mechanism is additionally provided on workbench 1, sample stage 2 is arranged in the transport mechanism.
Optionally, the galvanometer of adjustable angle is equipped on laser generator 4.
Galvanometer is arranged when on laser generator 4, the laser that laser generator 4 issues laser generator 4 by galvanometer
The different location of optical system 3 is irradiated to be irradiated to the different location of 8 side of silicon wafer, passes through 8 side of laser ablation silicon wafer
Mode remove the doped region 85 of 8 side of silicon wafer.
Optionally, optical system 3 be can not hue angle fixed optical system, also being provided with angle in optical system 3 can
The galvanometer of tune.
Galvanometer is arranged when in optical system 3, in the laser irradiation to optical system 3 that laser generator 4 issues, optical system
The laser irradiation that system 3 issues laser generator 4 by galvanometer angle change passes through laser to the different location of 8 side of silicon wafer
The mode of 8 side of ablation silicon wafer removes the doped region 85 of 8 side of silicon wafer.
Further, it is equipped with the galvanometer of adjustable angle simultaneously on laser generator 4 and in optical system 3.
Optionally, at least one side of sample stage 2 is arranged in optical system 3.
Optionally, optical system can be include one of lens, reflecting mirror, prism and diaphragm etc. or a variety of optics member
The system that part is combined into according to certain combination order, to realize the purpose for changing laser optical path.
Further, it is additionally provided with sample protection mechanism 7 on sample stage 2, to ensure that laser will not be ablated to the front of silicon wafer.
By taking following example as an example, the processing method and processing device of silicon wafer provided in an embodiment of the present invention is done and is further said
It is bright.
Embodiment 1
As shown in Figure 1, the method for the processing unit processing silicon wafer of the silicon wafer, comprising the following steps:
Silicon wafer 8 is chosen, there is doped region 85 in the side of silicon wafer 8,
Silicon wafer 8 is placed on sample stage 2, is issued in laser irradiation to optical system 3 using laser generator 4, by light
System 3 is changed and is irradiated to the side of silicon wafer 8 to the route for the laser that laser generator 4 issues, and passes through laser ablation
8 side of silicon wafer, mode remove the doped region 85 of 8 side of silicon wafer.
Laser generator 4 be pulsed laser, optical maser wavelength be 100~10000nm, pulse recurrence frequency be 0~
100MHz, pulse width 10-15~10-4S, average laser power are greater than 1W.
As shown in Fig. 2, the processing unit of the silicon wafer used in the silicon slice processing method, including workbench 1, one for putting
Sample stage 2, optical system 3 and the laser generator 4 of silicon wafer 8 are set, sample stage 2 and optical system 3 are arranged on workbench 1, swash
The top of workbench 1 is arranged in optical generator 4.
Laser generator 4 be pulsed laser, optical maser wavelength be 100~10000nm, pulse recurrence frequency be 0~
100MHz, pulse width 10-15~10-4S, average laser power are greater than 1W.
Sample stage 2 is fixed sample stage.
The galvanometer of adjustable angle is equipped on laser generator 4.
The entire side of sample stage 2 is arranged in optical system 3.
Optical system 3 can be include one of lens, reflecting mirror, prism and diaphragm etc. or a variety of optical elements according to
The system that certain combination order is combined into, to realize the purpose for changing laser optical path.
Silicon wafer 8 is placed on sample stage 2 by the processing unit when working, and laser generator 4 issues laser, and by included
Galvanometer is irradiated on the different location of optical system 3, to be irradiated to the different location of 8 side of silicon wafer.
Structure before the processing of silicon wafer 8 is as shown in figure 8, include silicon substrate 81, the front of silicon substrate 81 is equipped with front side emitter pole
82, front passivating film 83, front electrode 84, the back side and side of silicon substrate 81 are equipped with back side doped region 89 and side doped region
Domain 85, back side doped region 89 are equipped with backside passivation film 86 and rear electrode 87.
Wherein silicon wafer 8 is the quasi- square N-type battery slice of 156mm*156mm.
Treated that structure is as shown in Figure 10 for silicon wafer 8, and laser ablated region 88 is formd at side doped region 85.Phase
Than carving edge equipment treated cell piece in conventional laser as shown in Figure 9, laser ablated region 88 influences whether cell piece just
Face transfer efficiency and appearance, treated that cell piece laser ablated region 88 is located at cell piece side for the equipment in the present invention,
It will not influence cell piece front transfer efficiency and appearance.
Embodiment 2
As shown in figures 1 and 3, unlike the first embodiment:
Specifically, laser generator 4 is located at the surface of silicon wafer 8.
Specifically, the entire side of sample stage 2 is arranged in optical system 3.
Further, it is equipped with adjustable angle galvanometer on laser generator 4, also is provided with adjustable angle in optical system 3
Galvanometer, the laser that laser generator 4 issues are irradiated in optical system 3 by galvanometer, and optical system 3 is become by the angle of galvanometer
Change the laser irradiation for issuing laser generator 4 to the different location of 8 side of silicon wafer, passes through the side of 8 side of laser ablation silicon wafer
Formula removes the doped region 85 of 8 side of silicon wafer, as shown in Figure 3.
Finished battery piece effect after treatment is similar to Example 1.
Embodiment 3
As illustrated in figures 4-5, unlike the first embodiment:
Specifically, laser generator 4 is located at the surface of optical system 3.
Specifically, sample stage 2 is rotatable sample platform, is arranged on workbench 1.
Specifically, one of side of sample stage 2 is arranged in optical system 3.
Further, the galvanometer of adjustable angle is equipped on laser generator 4.
When device works, silicon wafer 8 is placed on sample stage 2, laser generator 4 issues laser, and by carrying galvanometer
It is irradiated to the different location of optical system 3, to be irradiated to the different location of one of side of silicon wafer 8.When having handled silicon
After the doped region 85 of one side of piece 8, sample stage 2 is rotated by 90 °, laser generator 4 repeats above-mentioned movement, until silicon
The doped region 85 of four sides of piece 8 is all disposed off, as shown in Figure 5.
Silicon wafer 8 is the rectangular p-type cell piece of 156mm*156mm, cell piece effect and 1 class of embodiment after treatment
Seemingly.
Embodiment 4
As shown in Figure 4 and Figure 6, unlike the first embodiment:
Specifically, laser generator 4 is located at the surface of optical system 3.
Specifically, sample stage 2 is rotatable sample platform, is arranged on workbench 1.
Specifically, one of side of sample stage 2 is arranged in optical system 3.
Further, the galvanometer of adjustable angle is equipped in optical system 3.
When device works, silicon wafer 8 is placed on sample stage 2, laser generator 4 issues laser irradiation to optical system 3
On, the different zones of one of side of silicon wafer 8 are irradiated to by the adjustment of galvanometer, when a side for having handled silicon wafer 8
Doped region 85 after, sample stage 2 is rotated by 90 °, laser generator 4 repeats above-mentioned movement, until four sides of silicon wafer 8
Doped region 85 is all disposed off, as shown in Figure 6.
Silicon wafer 8 is the rectangular p-type cell piece of 156mm*156mm, cell piece effect and 1 class of embodiment after treatment
Seemingly.
Embodiment 5
As shown in Figure 4 and Figure 6, unlike the first embodiment:
Specifically, laser generator 4 is located at the surface of optical system 3.
Specifically, sample stage 2 is rotatable sample platform, is arranged on workbench 1.
Specifically, one of side of sample stage 2 is arranged in optical system 3, and optical system 3 is fixed on table top
Can not hue angle fixed optical system.
When device works, silicon wafer 8 is placed on sample stage 2, laser generator 4 issues laser irradiation to optical system 3
On, while laser irradiation, sample stage 2 carries the rotation of silicon wafer 8, until the doped region 85 of four sides of silicon wafer 8 is complete
Portion is processed.
Silicon wafer 8 is the quasi- square N-type battery slice of 156mm*156mm, cell piece effect and 1 class of embodiment after treatment
Seemingly.
Embodiment 6
As shown in Figure 4 and Figure 6, unlike the first embodiment:
Specifically, laser generator 4 is located at the surface of optical system 3.
Specifically, sample stage 2 is removable and rotatable sample platform, is arranged on workbench 1.
Specifically, one of side of sample stage 2 is arranged in optical system 3, and optical system 3 is fixed on table top
Can not hue angle fixed optical system.
When device works, silicon wafer 8 is placed on sample stage 2, laser generator 4 issues laser irradiation to optical system 3
On, while laser irradiation, sample stage 2 carries silicon wafer 8 and moves along the direction perpendicular to laser optical path, subsequent sample stage
2, which carry silicon wafer 8, is rotated by 90 °, and repeats the above steps until the doped region 85 of four sides of silicon wafer 8 is all processed.
Silicon wafer 8 is the quasi- square N-type battery slice of 156mm*156mm, cell piece effect and 1 class of embodiment after treatment
Seemingly.
Embodiment 7
As shown in fig. 7, unlike the first embodiment:
Specifically, laser generator 4 is located at the surface of optical system 3.
Specifically, sample stage 2 is removable and rotatable sample platform, is arranged on workbench 1.
Specifically, one of side of sample stage 2 is arranged in optical system 3, and optical system 3 is fixed on table top
Can not hue angle fixed optical system.
Further, sample protection mechanism 7 is additionally provided on sample stage 2, sample protection mechanism 7 can be moveable lid
Plate, cover board surrounding have the baffle of protrusion.
When device works, after silicon wafer 8 is placed on sample stage 2, sample protection mechanism 7 is covered above silicon wafer, cover board
The baffle of surrounding protrusion shelters from silicon chip side top edge to silicon wafer, and laser generator 4 issues laser irradiation to optical system 3
On, while laser irradiation, sample stage 2 carries silicon wafer 8 and sample protection mechanism 7 along the direction perpendicular to laser optical path
Mobile, subsequent sample stage 2 carries silicon wafer 8 and sample protecting platform is rotated by 90 °, and repeats the above steps until four of silicon wafer 8
The doped region 85 of side is all processed.
Silicon wafer 8 is the quasi- square N-type battery slice of 156mm*156mm, cell piece effect and 1 class of embodiment after treatment
Seemingly.And the presence of sample protection mechanism 7 is it is possible to prevente effectively from table top or optical path shake cause laser irradiation to the wind of front side of silicon wafer
Danger.
Taking the above-mentioned ideal embodiment according to the present invention as inspiration, through the above description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property range is not limited to the contents of the specification, it is necessary to which the technical scope thereof is determined according to the scope of the claim.
Claims (10)
1. a kind of processing method of silicon wafer, comprising the following steps:
It provides silicon wafer (8), there are doped region (85) in the side of the silicon wafer (8),
In the laser irradiation to optical system (3) that laser generator (4) are issued, by optical system (3) to the route of laser
It is changed and is irradiated to the side of silicon wafer (8), the side of silicon wafer (8) is removed by way of laser ablation silicon wafer (8) side
Doped region (85) at least part.
2. the processing method of silicon wafer according to claim 1, it is characterized in that: the laser generator (4) swashs for pulsed
Light device, optical maser wavelength are 100~10000nm, and pulse recurrence frequency is 0~100MHz, pulse width 10-15~10-4S, laser
Mean power is greater than 1W.
3. a kind of processing unit of silicon wafer, it is characterized in that: including workbench (1), one or more for placing the sample of silicon wafer (8)
Sample platform (2), optical system (3) and laser generator (4), the sample stage (2) and the optical system (3) are arranged in the work
Make on platform (1), top of laser generator (4) setting in the workbench (1).
4. the processing unit of silicon wafer according to claim 3, it is characterized in that: the laser generator (4) swashs for pulsed
Light device, optical maser wavelength are 100~10000nm, and pulse recurrence frequency is 0~100MHz, pulse width 10-15~10-4S, laser
Mean power is greater than 1W.
5. the processing unit of silicon wafer according to claim 3, it is characterized in that: the sample stage (2) be fixed sample stage, can
Mobile example platform, rotatable sample platform or removable and rotatable sample platform；Or conveyer is additionally provided on the workbench (1)
Structure, the sample stage (2) are arranged in the transport mechanism.
6. the processing unit of silicon wafer according to claim 5, it is characterized in that: being equipped with angle on the laser generator (4)
Spend adjustable galvanometer.
7. the processing unit of silicon wafer according to claim 5, it is characterized in that: the optical system (3) is that angle is non-adjustable
Fixed optical system.
8. according to the processing unit of silicon wafer described in claim 5,6 or 7, it is characterized in that: also being set on the optical system (3)
Angled adjustable galvanometer (5).
9. according to the processing unit of the described in any item silicon wafers of claim 3-8, it is characterized in that: the optical system (3) is arranged
In at least one side of the sample stage (2).
10. according to the processing unit of the described in any item silicon wafers of claim 3-8, it is characterized in that: also being set on the sample stage (2)
There are sample protection mechanism (7).
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