CN109285797B - Substrate heating apparatus and substrate heating method - Google Patents
Substrate heating apparatus and substrate heating method Download PDFInfo
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- CN109285797B CN109285797B CN201810794374.3A CN201810794374A CN109285797B CN 109285797 B CN109285797 B CN 109285797B CN 201810794374 A CN201810794374 A CN 201810794374A CN 109285797 B CN109285797 B CN 109285797B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention provides a technique capable of immediately cooling a substrate after completion of a heating process, thereby stopping excessive progress of the heating process. In a substrate heating device for heating a substrate, i.e., a wafer (W), mounted on a mounting table from the lower surface side of the substrate, a ceiling portion is provided opposite to the mounting surface of a hot plate constituting the mounting table, and a cooling portion constituted by a Peltier element is provided in the ceiling portion. After the wafer is placed on the hot plate and subjected to the heating process, the wafer is lifted from the hot plate to a position close to the ceiling portion by the lifting portion, and cooled by the cooling portion. By raising the wafer from the hot plate, the wafer can be cooled immediately after the heating process by approaching the ceiling portion cooled by the cooling portion, and therefore the temperature of the wafer can be rapidly reduced, and excessive progress of the heating process can be stopped.
Description
Technical Field
The present invention relates to a substrate heating apparatus and a substrate heating method for performing a heating process of heating a substrate placed on a stage from a lower surface side of the substrate.
Background
One of the processes performed in the photolithography process for forming a coating film pattern on a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate is a process for placing the wafer as a substrate on a hot plate constituting a placing table and heating the wafer. As an example of the heat treatment, PEB (Post Exposure Bake: post-exposure bake) treatment in which the exposed wafer is heated to promote chemical reaction of the resist film can be exemplified. For example, a chemically amplified resist is subjected to an exposure treatment to generate an acid by photodecomposition of a photoacid generator at the exposed portion. Then, the wafer is heated to a temperature equal to or higher than the reaction temperature by the PEB treatment, and the generated acid diffuses into the resist to chemically react with the resist, so that the solubility of the developer in the exposed region is changed.
In the prior art, PEB treatment is performed by a heating assembly having a hot plate and a cold plate that doubles as a delivery mechanism. In this heating module, a wafer is transferred from an external conveyance mechanism to a hot plate via a cooling plate to perform a heating process. After the completion of the heating process, the wafer is transferred from the hot plate to the cooling plate, and the wafer is cooled on the cooling plate, and then transferred to an external transport mechanism. However, in this heating module, since a chemical reaction in the resist proceeds between the hot plate and the transfer of the wafer to the cooling plate, there is a concern that the accuracy of the pattern line width is lowered due to this.
Patent document 1 describes a technique in which a substrate is heated to a 1 st temperature by irradiation of LED light, then the substrate and a heat treatment plate are separated from each other and heated to a 2 nd temperature, and then the substrate is placed on the heat treatment plate and heated to a 3 rd temperature. However, even if this technique is applied to PEB treatment, the progress of chemical reaction in the resist cannot be stopped immediately after the completion of the heat treatment, and it is difficult to solve the problem of the present invention.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-79779
Disclosure of Invention
Technical problem to be solved by the invention
The present invention has been made in view of the above-described problems, and an object thereof is to provide a technique capable of stopping excessive progress of a heating process by immediately cooling a substrate after completion of the heating process.
Technical scheme for solving technical problems
In order to achieve the above object, a substrate heating apparatus according to the present invention is a substrate heating apparatus for heating a substrate placed on a stage from a lower surface side of the substrate to perform a heating process, the substrate heating apparatus comprising:
a lifting part for lifting the substrate between the carrying surface of the carrying table and an upper position above the carrying surface;
a ceiling portion provided opposite to a mounting surface of the mounting table;
a cooling unit provided in the ceiling; and
and a control unit configured to output a control signal so that the substrate after the completion of the heating process is lifted from the mounting surface of the mounting table to a position near the ceiling portion by the lifting unit, and the substrate is cooled by the cooling unit.
In addition, the substrate heating method of the present invention is characterized by comprising:
a step of placing a substrate on a placement table;
next, a step of heating the substrate from a lower surface side of the substrate to perform a heating process;
a step of raising the heated substrate from the mounting surface of the mounting table to a position near a ceiling portion provided opposite to the mounting surface by a raising/lowering unit; and
and cooling the substrate by a cooling part arranged on the ceiling part.
Effects of the invention
According to the present invention, a substrate is placed on a placement table and subjected to a heat treatment, and the substrate after the heat treatment is lifted up to a position close to a ceiling portion by a lifting/lowering unit, and is cooled by a cooling unit provided in the ceiling portion. In this way, since the substrate can be cooled immediately after the heat treatment by raising the substrate from the mounting table, the temperature of the substrate can be rapidly reduced, and the excessive progress of the heat treatment can be stopped.
Drawings
FIG. 1 is a longitudinal sectional side view showing embodiment 1 of a substrate heating apparatus according to the present invention.
Fig. 2 is a plan view showing a substrate heating apparatus.
FIG. 3 is a longitudinal cross-sectional side view showing the action of the substrate heating apparatus.
FIG. 4 is a longitudinal cross-sectional side view showing the action of the substrate heating apparatus.
Fig. 5 is a longitudinal sectional side view showing the action of the substrate heating apparatus.
Fig. 6 is a longitudinal cross-sectional side view showing another example of the substrate heating apparatus according to embodiment 1.
Fig. 7 is a longitudinal sectional side view showing embodiment 2 of the substrate heating apparatus.
Description of the reference numerals
1. 12 substrate heating device
2. Hot plate
23. Lifting pin
24. Lifting mechanism
3. 8 ceiling part
310. Flow path
4. 83 gas supply unit
45. 831 gas outlet
5. Peltier element
7. Cooling plate
86. Cooling mechanism
61. 87 exhaust port
100. Control unit
W semiconductor wafer.
Detailed Description
Embodiment 1 of the substrate heating apparatus 1 according to the present invention will be described with reference to a longitudinal cross-sectional side view of fig. 1 and a plan view of fig. 2. The substrate heating apparatus 1 of the present invention is suitable for use in, for example, an apparatus for performing PEB processing after exposure processing. The substrate heating apparatus 1 has a housing 10, and a transfer port 11 for a wafer W is formed in a side wall of the housing 10. When the side of the conveyance port 11 in the casing 10 is the near side, the horizontal hot plate 2 is provided on the deep side in the casing 10. The heat plate 2 is a member constituting a stage on which the wafer W is placed for performing a heat treatment on the wafer W. The heat plate 2 is formed in a circular shape in plan view, for example, larger than the wafer W, and is made of a metal such as aluminum (Al) or aluminum oxide (Al) 2 O 3 ) Ceramic such as aluminum nitride (AlN).
21 in fig. 1 is a heater for heating the hot plate 2. A plurality of protrusions 22 for supporting the peripheral edge portion of the wafer W are provided on the front surface (mounting surface) of the hot plate 2 along the circumferential direction of the hot plate 2. The wafer W is supported horizontally by the protrusions 22 and heated in a state of being lifted up from the hot plate 2, and the wafer W supported by the protrusions 22 is used as the wafer W placed on the placement surface of the hot plate 2. The wafer W is configured to be capable of freely lifting between the mounting surface of the hot plate 2 and a position above the mounting surface by the lifting pins 23, and the lifting pins 23 are provided so as to be capable of projecting and sinking into the mounting surface of the hot plate 2 by the lifting mechanism 24. The lift pin 23 and the lift mechanism 24 are members constituting a lift portion. In this way, the wafer W is configured to be capable of freely moving up and down between the mounting surface of the hot plate 2, a cooling position for cooling the wafer W, which will be described later, and a transfer position for transferring the wafer W between the cooling plate and the hot plate 2, which will be described later. The cooling position and the delivery position may be the same height.
A ceiling portion 3 is provided above the heat plate 2 so as to face the mounting surface of the heat plate 2. The ceiling portion 3 includes: for example, a ceiling member 31 formed in a shape of a circle in plan view larger than the heat plate 2; and a side wall portion 32 extending downward from the outer edge of the ceiling member 31. The ceiling portion 3 is configured to be capable of being lifted and lowered between a processing position shown in fig. 1 and a delivery position above the processing position by a lifting mechanism 33.
The ceiling portion 3 is provided with a gas supply portion 4 so as to face the hot plate 2. The gas supply portion 4 has a flat gas supply chamber 41 having a circular shape in a plan view, for example, the interior of the gas supply chamber 41 is divided into a 1 st supply chamber 42 on the center side and a 2 nd supply chamber 43 on the outer side of the 1 st supply chamber 42 by a partition member 44. The lower surface of the gas supply portion 4 is provided so as to face the hot plate 2 in correspondence with the lower surface of the ceiling portion 3, and is formed in a circular shape in plan view, for example, substantially the same as or larger than the wafer W. The gas supply portion 4 has a large number of gas discharge ports 45 on the lower surface thereof, including a 1 st gas discharge port 451 communicating with the 1 st supply chamber 42 and a 2 nd gas discharge port 452 communicating with the 2 nd supply chamber 43.
The 1 st supply chamber 42 and the 2 nd supply chamber 43 are connected to the purge gas supply source 46 via the 1 st gas supply passage 421 and the 2 nd gas supply passage 431, respectively. As purge gas, room temperature air or nitrogen (N 2 ) Etc. In fig. 1, 422 and 432 are flow rate adjusting units each having an on-off valve, a mass flow controller, and the like.
Such a gas supply portion 4 is made of, for example, a material having good thermal conductivity, such as aluminum (Al), and is provided with a plurality of peltier elements 5 constituting a cooling portion on its upper surface. The peltier elements 5 are provided such that, for example, a surface in contact with the gas supply unit 4 becomes a cooling surface, and the plurality of peltier elements 5 are connected in series to each other, for example, and connected to the power supply unit 52 via the wiring 51. When power is supplied to the peltier element 5, the gas supply portion 4 is cooled from the upper surface, and the temperature of the entire gas supply portion 4 is reduced, so that the ceiling portion 3 can be cooled.
Further, an exhaust port 61 for exhausting gas from the peripheral edge portion side of the wafer W is provided outside the gas supply portion 4 in the ceiling portion 3. The exhaust port 61 in this example is formed to be opened at a position higher than a wafer W located at a nearby position, which will be described later, and a plurality of exhaust ports are provided around the gas supply unit 4 in the circumferential direction, and are connected to the exhaust mechanism 64 via, for example, an exhaust passage 62 and an exhaust passage 63 formed in the ceiling unit 3. In the drawing 631, an exhaust gas amount adjusting section having an on-off valve and the like is shown.
The 1 st gas outlet 451 in this example corresponds to a gas outlet formed in a portion of the ceiling portion 3 opposed to a position at the center of the peripheral edge of the wafer W. The 1 st gas outlet 451 is configured to discharge the gas from the 1 st gas outlet 451, and when the gas is discharged from the gas outlet 61, a negative pressure is generated in the central portion of the wafer W due to the bernoulli effect caused by the gas flowing from the central portion to the peripheral portion of the wafer W.
The side wall 32 of the ceiling portion 3 is, for example, formed to extend below the lower surface of the gas supply portion 4, and the wall 25 is provided below the side wall 32 when the ceiling portion 3 is located at the processing position. The wall 25 is formed in a cylindrical shape that stands on the side of the heat plate 2 with a gap from the heat plate 2 so as to surround the heat plate 2, and is provided on a bottom plate of the case 10, for example. The lower edge of the side wall 32 of the ceiling portion 3 located at the processing position and the upper edge of the wall 25 may be in contact with each other, or may be configured to be slightly close to each other with a gap formed therebetween as shown in fig. 1. The upper edge of the wall portion 25 is configured not to contact a cooling plate to be described later when the cooling plate moves to the hot plate 2 side.
An exhaust port 65 is provided between the heat plate 2 and the wall 25. A plurality of exhaust ports 65 in this example are provided around the periphery of the platen 24 in the circumferential direction, and are connected to an exhaust mechanism 67 via an exhaust passage 66. In the figure 661, an exhaust gas amount adjusting unit having an on-off valve and the like is shown. The exhaust port 65 is connected to an exhaust mechanism 64 via an exhaust passage 66, and the exhaust mechanism 64 is configured to exhaust the exhaust port 61 provided around the gas supply unit 4.
In fig. 1 and 2, reference numeral 7 denotes a cooling plate constituting a cooling body, which has a cooling medium flow path (not shown) and has an action of transferring the wafer W between the hot plate 2 and an external transport mechanism (not shown) and an action of cooling the wafer W in an auxiliary manner. The cooling plate 7 is formed of, for example, aluminum, and is formed in a substantially circular shape in plan view, which is substantially the same as or larger than the wafer W, and is configured to be movable between a standby position shown in fig. 1 and a delivery position above the hot plate 2 by the driving mechanism 71. The external transport mechanism is lifted and lowered with respect to the cooling plate 7 located at the standby position, and the wafer W is transferred. In fig. 2, reference numeral 72 denotes a notch corresponding to a claw portion for holding a wafer provided in the transport mechanism, and in fig. 2, reference numerals 73 and 74 denote slits through which the lift pins 23 pass.
The substrate heating apparatus 1 includes a control unit 100, and the control unit 100 is configured by, for example, a computer and includes a program storage unit, not shown. The program storage unit stores a program in which commands (step group) for various operations such as heating and cooling of the wafer W, and conveyance of the wafer W by the above-described cooling plate 7 are combined. The control unit 100 outputs control signals to the respective units of the substrate heating apparatus 1, for example, the elevating mechanisms 24 and 33, the heater 21, the flow rate adjusting units 422 and 432, the exhaust gas amount adjusting units 631 and 661, the power supply unit 52, and the like, by this program, thereby controlling the operations of the respective units of the substrate heating apparatus 1. The control unit 100 is configured to: in the cooling process, a control signal is outputted, and the wafer W after the completion of the heating process is lifted from the mounting surface of the hot plate 2 to a position near the ceiling portion 3 by the lift pins 23, and cooled by the cooling portion. The program is stored in the program storage unit in a state of being stored in a recording medium such as a hard disk, an optical disk, a magneto-optical disk, or a memory card, for example.
Next, the operation of the substrate heating apparatus 1 will be described with reference to fig. 3 to 5. First, the wafer W to be heat-treated is sent into the housing 10 by an external transport mechanism, and is transferred to the cooling plate 7. The wafer W to be heat-treated is, for example, a wafer W subjected to exposure treatment by applying a chemically amplified resist solution to the surface. On the other hand, the ceiling portion 3 is raised to a delivery position above the processing position, and the surface of the hot plate 2 is heated to a preset temperature, for example, 80 to 150 ℃ by the heater 21 until the cooling plate 7 moves toward the hot plate 2. The delivery position is a position where the lower end of the side wall 32 of the ceiling 3 does not interfere with the delivery of the wafer W between the cooling plate 7 and the hot plate 2.
Next, as shown in fig. 3 (a), the wafer W is placed on the hot plate 2 via the cooling plate 7, and the ceiling portion 3 is lowered to the processing position, and heat treatment is performed. In this heating process, for example, the exhaust mechanism 67 exhausts the cleaning gas through the exhaust port 65, and supplies the cleaning gas to the 1 st supply chamber 42 and the 2 nd supply chamber 43 of the gas supply chamber 4, respectively. In this way, the wafer W is heated for a predetermined time while the gas is supplied from the gas exhaust ports 45 (the 1 st gas exhaust port 451 and the 2 nd gas exhaust port 452) formed on the entire lower surface of the gas supply chamber 4 to the wafer W on the hot plate 2.
In this heat treatment (PEB treatment), as described above, the deprotection reaction of the resist proceeds by diffusion of the acid generated by the exposure treatment, and therefore the wafer W is heated to a temperature equal to or higher than the reaction temperature of the deprotection reaction. Further, the sublimates are generated by the reaction, and the sublimates flow between the hot plate 2 and the side wall 25 together with the flow of the purge gas, and are exhausted from the exhaust port 65, so that the diffusion into the casing 10 can be suppressed.
After the heating treatment is performed for a predetermined time period, for example, 60 seconds, a cooling treatment is performed once as shown in fig. 3 (b). First, immediately before the end of the heating process, for example, at a time 20 seconds earlier than the end time of the heating process, electric power is supplied to the peltier element 5 as a cooling unit, and cooling of the gas supply unit 4 by the peltier element 5 is started. In the gas supply unit 4, heat is extracted from the upper surface side by the peltier element 5, and for example, the temperature of the entire gas supply unit 4 is reduced at the end of the heating process, and the ceiling portion 3 is cooled. In this way, the temperature of the lower surface of the gas supply unit 4 is set to, for example, 20 to 25 ℃.
When the heating process is completed, the wafer W is lifted up to a position near the ceiling portion 3 by the lift pins 23, and the primary cooling process is started. The vicinity position is an effective position for cooling the wafer W, and is, for example, a position at which the surface of the wafer W is separated from the lower surface of the ceiling portion 3 (lower surface of the gas supply portion 4) by 1mm to 3mm. The gas supply unit 4 supplies purge gas to the 1 st supply chamber 42, and stops supplying purge gas to the 2 nd supply chamber 43, and supplies only a predetermined flow rate of purge gas to the wafer W from the 1 st gas outlet 451. For example, the exhaust from the exhaust port 65 is stopped or the amount of the exhaust is made smaller than the amount of the exhaust during the heat treatment, and the exhaust from the exhaust port 61 formed on the side of the gas discharge port 45 is started. As a result, for example, as shown in fig. 3 (b), a gas is supplied to the center portion of the wafer W, and the gas is exhausted from the outer side of the peripheral portion of the wafer W.
As described above, the heat of the wafer W moves toward the ceiling portion 3 by approaching the cooled ceiling portion 3 (gas supply portion 4), and the wafer W is rapidly cooled to a temperature equal to or lower than the temperature at which the resist reaction is completed. Further, since the purge gas flows through the cooled gas supply unit 4, and the purge gas flows from the center portion to the peripheral portion of the wafer W while contacting the wafer W, the wafer W is also cooled by contacting the cooled purge gas. Therefore, in this example, a cooling portion for cooling the ceiling portion 3 has a flow path for a cooling gas to be supplied to the wafer W, which is opened to the lower surface of the ceiling portion 3.
Further, by controlling the distance between the wafer W and the lower surface of the ceiling portion 3 when the wafer W is positioned at the upper position, the exhaust flow path of the purge gas from the 1 st gas exhaust port 451, and the amount of the exhaust gas from the exhaust port 61, the bernoulli effect is generated by the gas flow from the center portion to the peripheral portion of the wafer W. That is, the flow rate of the gas in the center of the wafer W is higher than that in the other regions, and the bernoulli effect of generating negative pressure can be obtained.
Fig. 4 is a diagram schematically showing a state of the wafer W in the primary cooling process, where (a) of fig. 4 shows a state when the bernoulli effect is generated, and (b) of fig. 4 shows a state when the primary cooling process is performed without the bernoulli effect being generated. In fig. 4 (a) and 4 (b), the left view shows a state after the primary cooling process is started, and the right view shows a state after the primary cooling process is ended.
When the primary cooling treatment is performed by the bernoulli effect, as shown in fig. 4 (a), the upper side of the central portion of the wafer W is negative pressure, and therefore, an upward force acts on the central portion of the wafer W, and warpage of the wafer W, which is easily caused by rapid cooling of the wafer W, can be corrected and the wafer W can be cooled. On the other hand, when the bernoulli effect is not generated, as shown in fig. 4 (b), when the wafer W is rapidly cooled from above, the temperature difference between the upper surface side and the lower surface side of the wafer W tends to shrink the upper surface side of the wafer, and warpage tends to occur in which the peripheral edge portion of the wafer W becomes higher than the central portion and is convex downward. As described above, the bernoulli effect causes a force to attract the center portion of the wafer W from the gas supply portion 4 side and cools the wafer W, thereby suppressing warpage of the wafer W.
In this way, after the temperature of the wafer W is cooled to a temperature lower than the reaction temperature of the resist, the wafer W is transferred to the cooling plate 7, and the wafer W is subjected to secondary cooling by the cooling plate 7, as shown in fig. 5 (a). Specifically, the supply of electric power to the peltier element 5 and the supply of purge gas are stopped, and the exhaust from the exhaust port 61 and the exhaust from the exhaust port 65 are started, respectively. Then, the ceiling portion 3 is raised to the transfer position, and the wafer W is positioned at the transfer position by the lift pins 23. Then, the cooling plate 7 is moved to the upper side of the hot plate 2, and then the lift pins 23 are lowered, whereby the wafer W is transferred to the cooling plate 7.
Then, as shown in fig. 5 (b), the cooling plate 7 is retracted to the standby position, and the ceiling portion 3 is lowered to the processing position, for example. The wafer W is placed on the cooling plate 7 and cooled to room temperature, for example. Then, the wafer W is sent out from the housing 10 by an external conveyance mechanism, not shown.
According to this embodiment, the peltier element 5 constituting the cooling section is provided in the ceiling section 3, and after the completion of the heating process (PEB process), the wafer W is lifted from the hot plate 2 by the lift pins 23 until the wafer W approaches a position near the ceiling section 3 cooled by the peltier element 5. In this way, the wafer W is moved away from the heat source and brought closer to the cooling source, and the wafer W can be rapidly cooled immediately after the heat treatment, so that the wafer temperature can be rapidly reduced, and the excessive progress of the heat treatment can be stopped. As a result, the progress of the chemical reaction in the resist can be stopped at an appropriate timing in the PEB process, and the decrease in the accuracy of the pattern line width can be suppressed.
Further, since the wafer W is cooled by approaching the ceiling portion 3 and the wafer W is opposed to the lower surface of the ceiling portion 3, that is, the lower surface of the gas supply portion 4, the heat of the wafer W is moved to the ceiling portion 3 side in a state of being accumulated in the surface. This makes it possible to uniformly perform the cooling process on the surface of the wafer W, and to reduce the temperature while ensuring uniformity of the temperature of the wafer W in the surface.
Further, if the bernoulli effect described above is generated, the wafer W having a downward convex shape, which is present in a tendency to be generated during rapid cooling, can be corrected and cooled. Therefore, the distance between the upper surface of the wafer W and the lower surface of the ceiling portion 3 is uniform within the wafer W, and a more uniform cooling process can be performed within the wafer surface. Further, the wafer W is prevented from being warped, and the center portion of the wafer W is away from the ceiling portion 3, thereby reducing the cooling efficiency. As described above, the reduction in cooling efficiency can be suppressed, the total cooling treatment time can be shortened, and the productivity can be improved.
In the conventional structure in which the wafer W after the heat treatment is directly transferred from the hot plate 2 to the cooling plate 7 and cooled, the area of the cooling plate 7 in which the notch 72 and the slits 73 and 74 are formed has a lower cooling efficiency than other areas, and adversely affects the in-plane uniformity of the wafer temperature. In contrast, in the present invention, since the entire surface of the wafer W is cooled in the vicinity of the ceiling portion 3 as described above, the in-plane uniformity of the wafer temperature can be improved in this respect.
In the conventional structure in which the wafer W subjected to the heat treatment is directly transferred from the hot plate 2 to the cooling plate 7 and cooled, the temperature of the wafer W transferred to the cooling plate 7 is high, and the temperature of the cooling plate 7 is increased by the transfer of heat from the wafer W. Therefore, the temperature of the cooling plate 7 is not completely reduced to the temperature set at the beginning until the next wafer W is transferred from the external transfer mechanism, and heat is accumulated. As a result, the temperature of the cooling plate 7 when the second wafer W in the lot is transferred from the external transfer mechanism to the cooling plate 7 is higher than the temperature when the first wafer W in the lot is transferred, and there is a possibility that the temperature of the wafers W is not uniform when the wafers W are transferred to the hot plate 2, and the heat treatment is not uniform between the wafers W in the same lot.
In contrast, in the above-described embodiment, the wafer W whose temperature has been lowered by the primary cooling is transferred to the cooling plate 7, and therefore the transfer amount of heat to the cooling plate 7 is small. Therefore, even if the temperature of the cooling plate 7 increases due to the placement of the wafer W on the cooling plate 7, the temperature of the cooling plate 7 can be sufficiently reduced until the second wafer W in the lot is delivered from the external transport mechanism. Therefore, when the wafers W are transferred from the external transfer mechanism to the cooling plate 7, the temperature of the cooling plate 7 is uniform, and the heat treatment is not uniform between the wafers W in the same lot.
In the above description, in this embodiment, the power supply to the peltier element 5 can be always performed from the start of the heating process according to the type of the process of the wafer W. This is because the temperature of the ceiling portion 3 (gas supply portion 4) cooled by the peltier element 5 is, for example, 20 to 25 ℃, and when the temperature of the heating process is, for example, 80 ℃, the wafer W is placed on the hot plate 2 and sufficiently heated because the wafer W is separated from the ceiling portion 3 during the heating process.
In this embodiment, the cooling portion that cools the ceiling portion 3 may be a flow path of the cooling medium. In this example, as shown in fig. 6, instead of providing a peltier element in the ceiling portion 3, a flow path 310 for a cooling medium is formed in the ceiling member 31 of the ceiling portion 3, for example. The flow path 310 is connected to a cooling medium such as a cooling water supply source 312 via a supply path 311, and the cooling water flows through the flow path 310 to cool the ceiling portion 3. The other structures are the same as those of the substrate heating apparatus 1 described above. In this example, the wafer W after the completion of the heating process is raised to a position near the ceiling portion 3 by the lift pins 23 based on a control signal from the control unit 100, and the cooling water is flowed through the flow path 310, whereby the primary cooling process of the wafer W is performed. The flow path of the cooling medium may be formed in a member constituting the upper surface of the gas supply portion 4 or a member constituting the side surface.
In embodiment 1, the internal space of the gas supply unit 4 is not partitioned, and the gas is discharged from the gas discharge port 45 formed on the entire surface of the gas supply unit 4 during the primary cooling, so that the negative pressure can be generated in the central portion of the wafer by the bernoulli effect by the gas flow from the central portion to the peripheral portion of the wafer. In this case, for example, the shape, the aperture, and the arrangement of the gas discharge port 45 are studied, so that the flow rate of the gas in the center portion of the wafer is larger than that in the other regions, and the bernoulli effect is generated.
In the primary cooling process, the bernoulli effect does not necessarily have to be generated, for example, when the suppression of warpage of the wafer W is not required depending on the type of process performed on the wafer W. In this case, during the primary cooling process, the gas may be supplied from the gas supply unit 4 to cool the entire surface of the wafer W in a state where the flow rate is uniform. In the primary cooling process, the supply of the gas from the gas supply unit 4 may be stopped to cool the wafer W. In the case of performing the primary cooling treatment without producing the bernoulli effect as described above, it is not necessary to form the exhaust port 61 on the ceiling portion 3 side. The gas in the primary cooling process may be exhausted through either one of the exhaust ports 61 and 65, or may be exhausted through both the exhaust ports 61 and 65.
Next, embodiment 2 of the substrate heating apparatus of the present invention will be described with reference to fig. 7. The substrate heating apparatus 12 according to this embodiment is different from embodiment 1 in that a cooling portion provided in the ceiling portion 8 is a flow path for a cooling gas to be supplied to the wafer W, which is opened to the lower surface of the ceiling portion 8. The ceiling portion 8 in this example includes a ceiling member 81 and a side wall portion 82, and a gas supply portion 83 is provided on the ceiling member 81 so as to face the heat plate 2. The gas supply section 83 is configured such that a member constituting a flow path of the cooling gas is formed in a flat cylindrical shape having the same planar shape as the wafer W or larger than the wafer W, and a plurality of gas discharge ports 831 are formed in the lower surface thereof.
The gas supply portion 83 is connected to a supply source 85 of a purge gas such as air at room temperature via a supply path 84, and is connected to the supply source 85 of the purge gas via a cooling mechanism 86 through a branching path 841 branching from the supply path 84. The cooling mechanism 86 is configured to cool the purge gas by, for example, providing a peltier element or the like around the flow path of the purge gas. In the figures, 851 and 852 are flow rate adjusting sections each having an on-off valve, a mass flow controller, and the like. Further, for example, a plurality of exhaust ports 87 are formed along the circumferential direction of the gas supply portion 83 between the gas supply portion 83 and the side wall portion 82, and the exhaust ports 87 are connected to the exhaust mechanism 89 via the exhaust passage 821 and the exhaust passage 88 in the side wall portion 82. 881 is an exhaust gas amount adjuster.
The gas discharge port 831 is formed, for example, at a position facing the center of the peripheral edge of the wafer W in the ceiling portion 8. In order to generate a negative pressure in the center portion of the wafer W by using, for example, the bernoulli effect generated by the gas flow from the center portion to the peripheral portion of the wafer W, the shape, the aperture, and the arrangement of the gas discharge ports 831 are studied, and the flow rate of the gas in the center portion of the wafer is set to be higher than that in other regions. Other structures are the same as those of embodiment 1, and the same reference numerals are given to the same constituent members, and the description thereof will be omitted.
In the substrate heating apparatus 12, as in embodiment 1, the wafer W to be heat-treated is fed into the housing 10 by an external conveying mechanism, and is transferred to the hot plate 2 via the cooling plate 7 to be heat-treated. That is, for example, the exhaust mechanism 67 exhausts the cleaning gas through the exhaust port 65 and supplies the cleaning gas to the gas supply unit 83, so that the wafer W on the hot plate 2 is heated at a temperature higher than the reaction temperature, for example, 80 to 110 ℃ for a predetermined time in a state where the gas is supplied from the gas exhaust port 831 formed on the entire lower surface of the gas supply unit 83. The sublimate generated by the heating process flows between the hot plate 2 and the side wall portion along with the flow of the purge gas, and is exhausted from the exhaust port 65.
After the heating treatment is performed in this way, the supply of the cooling gas to the gas supply unit 83 is started, and the primary cooling treatment is performed. The cooling gas is supplied, for example, by supplying the purge gas from the purge gas supply source 85 to the gas supply unit 83 via the branch line 841 and the supply line 84. The purge gas is thereby cooled by the cooling mechanism 86, and is supplied as a cooling gas to the gas supply portion 83.
In the primary cooling process, the wafer W is raised by the lift pins 23 to a position near the gas supply portion 83. The distance between the surface of the wafer W located at the vicinity and the lower surface of the gas supply section 8 is, for example, 1 to 3mm. Further, for example, the exhaust from the exhaust port 65 is stopped or the exhaust amount is made smaller than the exhaust amount during the heating process, and the exhaust from the exhaust port 87 formed on the side of the gas discharge port 831 is started. Accordingly, the cooling gas flows from the center portion of the wafer W toward the peripheral edge side while contacting the wafer W, and thus the wafer W is cooled to a temperature lower than the reaction temperature, for example, a temperature 20 to 30 ℃ lower than the temperature during the heating process by contacting the wafer W with the cooling gas.
The gas discharge port 831 is formed, for example, so as to generate the bernoulli effect, and the bernoulli effect is generated by controlling the supply flow rate of the gas from the gas discharge port 831 and the amount of the exhaust gas from the exhaust port 67 in the distance between the wafer surface and the lower surface of the gas supply portion 83 when the wafer W is positioned in the vicinity. In this way, by utilizing the bernoulli effect that negative pressure is generated in the center portion of the wafer, upward force acts on the center portion of the wafer W, and the wafer W can be cooled while being corrected for warpage of the wafer W that is convex downward.
In this way, after the temperature of the wafer W is cooled to a temperature lower than the reaction temperature of the resist, the wafer W is transferred to the cooling plate 7, and the wafer W is secondarily cooled on the cooling plate 7. Specifically, the supply of the cooling gas to the gas supply portion 83 and the exhaust from the exhaust port 87 are stopped, and the exhaust from the exhaust port 65 is started, respectively, to transfer the wafer W to the cooling plate 7. After that, the cooling plate 7 is retracted to the standby position, and the wafer W is sent out from the housing 10 by an external conveyance mechanism, not shown, after the wafer W is cooled to room temperature, for example.
According to this embodiment, a flow path for cooling gas is provided in the ceiling portion 8 as a cooling portion, and after the heating process is completed, the wafer W is raised to a position near the ceiling portion 8 and cooled. This makes it possible to rapidly cool the wafer W immediately after the heat treatment, and thus to stop the excessive progress of the heat treatment. In addition, as in embodiment 1, uniform cooling treatment can be performed on the wafer surface, and if the bernoulli effect is generated, cooling can be performed while correcting warpage. As a result, the reduction in cooling efficiency can be suppressed, and the productivity can be improved as described above.
In the above description, in this embodiment, instead of providing the cooling mechanism 86 in the purge gas supply path (branch path), for example, a gas adjusted to a temperature lower than room temperature may be stored in advance in the purge gas supply source, and supplied as a cooling gas. In this case, the cooling gas may be supplied as a purge gas even in the heating process when the temperature of the heating process is, for example, 80 ℃. Since the wafer W is separated from the ceiling 8 during the heating process, even if the cooling gas is supplied, the wafer W can be sufficiently heated by being placed on the hot plate 2.
In the primary cooling process, the bernoulli effect does not necessarily occur, for example, when the suppression of warpage of the wafer W is not required to be considered, depending on the type of process performed on the wafer W. In this case, the gas is supplied from the gas supply unit 83 to the entire surface of the wafer W in a state where the flow rate is uniform during the heating process and the primary cooling process, and the wafer W is cooled. In the case of performing the primary cooling treatment without producing the bernoulli effect as described above, it is not necessary to form the exhaust port 87 at a time in the ceiling portion 8. The gas during the primary cooling process may be exhausted through either one of the exhaust ports 65 and 87, or both of the exhaust ports 65 and 87 may be used.
In the above description, the temperature of the wafer W during the heat treatment and the temperature of the primary cooling treatment in the present invention are not limited to the above examples. The heat treatment of the present invention is not limited to the PEB treatment, and can be applied to a heat treatment before the exposure treatment after the resist coating and a heat treatment after the development treatment. The method of heating the substrate placed on the stage from the lower surface side of the substrate is not limited to the case where the stage is constituted by a hot plate, and for example, the stage is constituted by an adaptive transmission member, and a heating lamp for irradiating infrared rays may be used as the heating means to heat the substrate placed on the stage from the lower surface side of the substrate.
In addition, for example, as shown in embodiment 1, the substrate heating apparatus of the present invention can be applied to a configuration in which a purge gas is supplied from the outer periphery of the mounting table and exhaust gas is performed from the central portion of the ceiling portion in the case where the cooling portion provided in the ceiling portion is a peltier element or a flow path of a cooling medium.
Claims (6)
1. A substrate heating apparatus for heating a substrate placed on a stage from a lower surface side of the substrate to perform a heating process, the substrate heating apparatus comprising:
a lifting part for lifting the substrate between the carrying surface of the carrying table and an upper position above the carrying surface;
a ceiling portion provided opposite to a mounting surface of the mounting table;
a cooling unit provided in the ceiling;
a gas supply unit including a 1 st gas discharge port and a 2 nd gas discharge port, each of which is open to a lower surface of the ceiling unit, wherein the 1 st gas discharge port is formed in a portion of the ceiling unit that is opposed to a position on a center of the substrate with respect to a peripheral edge portion, and the 2 nd gas discharge port is formed in a position on a peripheral edge side of the ceiling unit with respect to the 1 st gas discharge port;
a 1 st flow rate adjustment unit for adjusting the flow rate of the gas discharged from the 1 st gas discharge port;
a 2 nd flow rate adjustment unit for adjusting the flow rate of the gas discharged from the 2 nd gas discharge port;
an upper exhaust port provided outside the 2 nd gas exhaust port in the ceiling portion for exhausting gas from a peripheral edge portion side of the substrate located at the upper position;
a lower exhaust port provided around the mounting table;
a 1 st exhaust amount adjusting unit for adjusting the exhaust amount of the upper exhaust port;
a 2 nd exhaust amount adjusting unit for adjusting an exhaust amount of the lower exhaust port; and
a control section that outputs a control signal such that execution: a step of discharging purge gas from the 1 st gas discharge port and the 2 nd gas discharge port and discharging the purge gas from the lower gas discharge port during the heat treatment; a step of raising the substrate after the completion of the heating process from the mounting surface of the mounting table to a position in the vicinity of the ceiling portion by the lifting/lowering portion in order to cool the substrate after the completion of the heating process by the cooling portion; and a step of generating negative pressure in a central portion of the substrate by a Bernoulli effect generated by an air flow going from the central portion of the substrate to a peripheral portion of the substrate by the discharge of the cooling gas from the gas supply portion and the discharge of the upper exhaust port with respect to the substrate rising to a position in the vicinity of the ceiling portion.
2. The substrate heating apparatus of claim 1, wherein:
the cooling portion is a peltier element, and the ceiling portion can be cooled by the peltier element.
3. The substrate heating apparatus of claim 1, wherein:
the cooling unit is a flow path of a cooling medium, and the ceiling unit can be cooled by the cooling medium.
4. A substrate heating apparatus according to any one of claims 1 to 3, wherein:
the upper exhaust port is provided at a position higher than the substrate at a position near the ceiling portion.
5. A substrate heating apparatus according to any one of claims 1 to 3, wherein:
a cooling body for auxiliary cooling of the substrate is arranged at the side of the carrying table,
the control unit outputs a control signal so that the substrate is cooled by the cooling unit provided in the ceiling unit, and then the cooled substrate is cooled by the cooling body.
6. A method of heating a substrate, comprising:
a substrate heating apparatus is used, the substrate heating apparatus comprising: a gas supply unit including a 1 st gas discharge port and a 2 nd gas discharge port, each of which is opened at a lower surface of a ceiling portion provided opposite to a mounting surface of a mounting table for a substrate, wherein the 1 st gas discharge port is formed at a position of the ceiling portion opposite to a position of the substrate at a center of the ceiling portion with respect to a peripheral edge portion, and the 2 nd gas discharge port is formed at a position of the ceiling portion at a peripheral edge side of the ceiling portion with respect to the 1 st gas discharge port; a 1 st flow rate adjustment unit for adjusting the flow rate of the gas discharged from the 1 st gas discharge port; a 2 nd flow rate adjustment unit for adjusting the flow rate of the gas discharged from the 2 nd gas discharge port; an upper exhaust port provided outside the 2 nd gas exhaust port in the ceiling portion, for exhausting gas from a peripheral edge portion side of the substrate raised from the mounting table; a lower exhaust port provided around the mounting table; a 1 st exhaust amount adjusting unit for adjusting the exhaust amount of the upper exhaust port; and a 2 nd exhaust amount adjusting section for adjusting an exhaust amount of the lower exhaust port,
a step of placing a substrate on a placement table;
next, while exhausting purge gas from the 1 st gas exhaust port and the 2 nd gas exhaust port and exhausting gas from the lower exhaust port, heating the substrate from the lower surface side of the substrate to perform a heating process;
a step of raising the heated substrate from the mounting surface of the mounting table by a raising/lowering section, positioning the substrate in the vicinity of the ceiling section, and cooling the substrate by a cooling section provided in the ceiling section; and
and a step of generating negative pressure in the central portion of the substrate by the Bernoulli effect generated by the air flow going from the central portion of the substrate to the peripheral portion of the substrate through the discharge of the cooling air from the air supply portion and the discharge of the upper air outlet for the substrate rising to the vicinity of the ceiling portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017140074A JP6926765B2 (en) | 2017-07-19 | 2017-07-19 | Substrate heating device and substrate heating method |
| JP2017-140074 | 2017-07-19 |
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| CN109285797A CN109285797A (en) | 2019-01-29 |
| CN109285797B true CN109285797B (en) | 2023-10-20 |
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| CN115502067B (en) * | 2022-10-25 | 2023-09-26 | 长鑫存储技术有限公司 | Heating device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1154393A (en) * | 1997-08-04 | 1999-02-26 | Komatsu Ltd | Wafer temperature adjusting equipment and its control method |
| JPH11195599A (en) * | 1997-10-27 | 1999-07-21 | Dainippon Screen Mfg Co Ltd | Wafer cooling apparatus and substrate cooling method |
| JP2007234980A (en) * | 2006-03-02 | 2007-09-13 | Tokyo Electron Ltd | Heat treatment apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079677A (en) * | 2002-08-13 | 2004-03-11 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
| US6883250B1 (en) * | 2003-11-04 | 2005-04-26 | Asm America, Inc. | Non-contact cool-down station for wafers |
| JP2007158077A (en) * | 2005-12-06 | 2007-06-21 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment apparatus |
| JP4840168B2 (en) * | 2007-01-31 | 2011-12-21 | 東京エレクトロン株式会社 | Heating device, heating method and storage medium |
| JP6211886B2 (en) | 2013-10-15 | 2017-10-11 | 東京エレクトロン株式会社 | Heat treatment method and heat treatment apparatus |
| KR101680071B1 (en) * | 2015-05-18 | 2016-11-28 | (주)에스티아이 | Heating device and heating method |
-
2017
- 2017-07-19 JP JP2017140074A patent/JP6926765B2/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1154393A (en) * | 1997-08-04 | 1999-02-26 | Komatsu Ltd | Wafer temperature adjusting equipment and its control method |
| JPH11195599A (en) * | 1997-10-27 | 1999-07-21 | Dainippon Screen Mfg Co Ltd | Wafer cooling apparatus and substrate cooling method |
| JP2007234980A (en) * | 2006-03-02 | 2007-09-13 | Tokyo Electron Ltd | Heat treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190009701A (en) | 2019-01-29 |
| KR102516013B1 (en) | 2023-03-31 |
| JP6926765B2 (en) | 2021-08-25 |
| JP2019021806A (en) | 2019-02-07 |
| CN109285797A (en) | 2019-01-29 |
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