JP7200638B2 - Heat treatment apparatus and heat treatment method - Google Patents

Heat treatment apparatus and heat treatment method Download PDF

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JP7200638B2
JP7200638B2 JP2018228381A JP2018228381A JP7200638B2 JP 7200638 B2 JP7200638 B2 JP 7200638B2 JP 2018228381 A JP2018228381 A JP 2018228381A JP 2018228381 A JP2018228381 A JP 2018228381A JP 7200638 B2 JP7200638 B2 JP 7200638B2
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剛 七種
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0032—Devices or apparatus characterised by heat providing or glossing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Description

本開示は、基板を加熱する技術に関する。 The present disclosure relates to techniques for heating a substrate.

半導体製造プロセスのフォトリソグラフィ工程においては、基板である半導体ウエハにレジストなどの薬液の塗布による各塗布膜の形成、塗布膜であるレジスト膜の露光、及び現像が行われる。そして基板に塗布膜を塗布した後や、レジスト膜に露光処理を行った後などに基板を加熱する熱処理が行われる。このような熱処理装置としては、例えば水平に載置した基板を加熱する熱処理装置が知られている。
特許文献１には、容器内において被処理体を加熱する発熱体を有する載置台と、当該容器内において載置台の上方に相対向して設けられた被処理体温度制御手段とを備えた熱処理装置が記載されている。そして被処理体を載置台にて加熱する前に被処理体を被処理体温度制御手段に近接あるいは接触させて被処理体を予備加熱するようにしている。 2. Description of the Related Art In the photolithography process of a semiconductor manufacturing process, a semiconductor wafer, which is a substrate, is coated with a chemical solution such as a resist to form each coating film, and the resist film, which is the coating film, is exposed and developed. After applying a coating film to the substrate, or after performing exposure processing on the resist film, heat treatment for heating the substrate is performed. As such a heat treatment apparatus, for example, a heat treatment apparatus that heats a horizontally placed substrate is known.
Patent Document 1 discloses a heat treatment system comprising a mounting table having a heating element for heating an object to be processed in a container, and an object temperature control means provided opposite to each other above the mounting table in the container. A device is described. Before the object to be processed is heated on the mounting table, the object to be processed is brought close to or in contact with the temperature control means for the object to be processed so that the object to be processed is preheated.

特開２００５－１５０６９６号公報Japanese Patent Application Laid-Open No. 2005-150696

本開示はこのような事情の下になされたものであり、基板を加熱処理する熱処理装置において、基板の熱処理の面内均一性を高める技術を提供することにある。 The present disclosure has been made under such circumstances, and it is an object of the present disclosure to provide a technique for improving the in-plane uniformity of heat treatment of a substrate in a heat treatment apparatus that heats the substrate.

本開示の熱処理装置は、載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記支持部は前記加熱機構と前記冷却機構とに共用され、
前記加熱機構及び前記冷却機構は、支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替え、
制御信号を出力する制御部が設けられ、
前記基板が前記支持部に支持されると同時か支持された後に、当該基板を前記第２の温度にするために前記冷却状態から前記加熱状態への切り替えが行われるように前記制御信号が出力される。
本開示の他の熱処理装置は、載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記支持部は前記加熱機構と前記冷却機構とに共用され、
前記加熱機構及び前記冷却機構は、支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替え、
制御信号を出力する制御部が設けられ、
前記冷却状態から前記加熱状態へ切り替わるタイミングは、前記基板を支持する前記搬送体が前記上方領域に位置する予定のタイミングに応じたタイミングとなるように前記制御信号が出力される。
本開示のさらに他の熱処理装置は、載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記支持部は前記加熱機構と前記冷却機構とに共用され、
前記加熱機構及び前記冷却機構は、支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替え、
制御信号を出力する制御部が設けられ、
当該制御部は、前記支持部に載置される前の前記基板の温度についての情報を取得し、
前記基板が搬送されるときの前記支持部の温度が、当該基板の温度に対応する温度になるように制御信号を出力する。
The heat treatment apparatus of the present disclosure includes a hot plate that heats a mounted substrate to a first temperature,
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The support portion is shared by the heating mechanism and the cooling mechanism,
The heating mechanism and the cooling mechanism have a heating state for heating the supporting portion so that the supported substrate reaches the second temperature, and a heating state for heating the supported substrate so that the supported substrate reaches the third temperature. switching between a cooling state that cools the support part;
A control unit that outputs a control signal is provided,
The control signal is output so that the cooling state is switched to the heating state to bring the substrate to the second temperature at the same time or after the substrate is supported by the support. be done .
Another heat treatment apparatus of the present disclosure includes a hot plate for heating a mounted substrate to a first temperature;
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The support portion is shared by the heating mechanism and the cooling mechanism,
The heating mechanism and the cooling mechanism have a heating state for heating the supporting portion so that the supported substrate reaches the second temperature, and a heating state for heating the supported substrate so that the supported substrate reaches the third temperature. switching between a cooling state that cools the support part;
A control unit that outputs a control signal is provided,
The control signal is output so that the timing of switching from the cooling state to the heating state corresponds to the timing at which the carrier supporting the substrate is expected to be positioned in the upper region.
Still another heat treatment apparatus of the present disclosure includes a hot plate for heating a mounted substrate to a first temperature;
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The support portion is shared by the heating mechanism and the cooling mechanism,
The heating mechanism and the cooling mechanism have a heating state for heating the supporting portion so that the supported substrate reaches the second temperature, and a heating state for heating the supported substrate so that the supported substrate reaches the third temperature. switching between a cooling state that cools the support part;
A control unit that outputs a control signal is provided,
The control unit acquires information about the temperature of the substrate before being placed on the support,
A control signal is output so that the temperature of the support portion when the substrate is transported becomes a temperature corresponding to the temperature of the substrate.

本開示によれば基板を加熱処理する熱処理装置において、基板の熱処理の面内均一性を高めることができる。 According to the present disclosure, in a heat treatment apparatus that heats a substrate, the in-plane uniformity of the heat treatment of the substrate can be improved.

本実施の形態に係る熱処理装置を示す縦断側面図である。1 is a longitudinal side view showing a heat treatment apparatus according to this embodiment; FIG. 前記熱処理装置を示す平面図である。It is a top view which shows the said heat processing apparatus. 前記熱処理装置に設けられる制御部を示す構成図である。It is a block diagram which shows the control part provided in the said heat processing apparatus. 前記熱処理装置の作用を示す説明図である。It is explanatory drawing which shows the effect|action of the said heat processing apparatus. 前記熱処理装置の作用を示す説明図であるIt is explanatory drawing which shows the effect|action of the said heat processing apparatus. 前記熱処理装置の作用を示す説明図であるIt is explanatory drawing which shows the effect|action of the said heat processing apparatus. 前記熱処理装置の作用を示す説明図であるIt is explanatory drawing which shows the effect|action of the said heat processing apparatus. 前記熱処理装置の作用を示す説明図であるIt is explanatory drawing which shows the effect|action of the said heat processing apparatus. 前記熱処理装置の作用を示す説明図であるIt is explanatory drawing which shows the effect|action of the said heat processing apparatus. 本実施の形態に係る熱処理装置の他の例を示す縦断側面図である。FIG. 5 is a longitudinal side view showing another example of the heat treatment apparatus according to the present embodiment; 熱処理装置のさらに他の例に設けられる制御部を示す構成図である。FIG. 11 is a configuration diagram showing a control unit provided in still another example of the heat treatment apparatus; 前記熱処理装置が設けられる塗布、現像装置を示す斜視図である。2 is a perspective view showing a coating and developing device provided with the heat treatment device; FIG. 前記塗布、現像装置の平面図である。2 is a plan view of the coating and developing device; FIG.

本開示の実施の形態に係る熱処理装置１について、図１の縦断側面図、図２の平面図を夫々参照しながら説明する。この熱処理装置１に搬送されるウエハＷの表面には化学増幅型のレジスト膜が形成されており、当該レジスト膜の表面は、この熱処理装置１による加熱後に現像処理を行うことでレジストパターンが形成されるように露光されている。つまり熱処理装置１はポストエクスポージャベーク（ＰＥＢ）を行い、露光により生じた酸をレジスト膜中に拡散させる。 A heat treatment apparatus 1 according to an embodiment of the present disclosure will be described with reference to the longitudinal side view of FIG. 1 and the plan view of FIG. 2, respectively. A chemically amplified resist film is formed on the surface of the wafer W transported to the heat treatment apparatus 1, and a resist pattern is formed on the surface of the resist film by performing development processing after heating by the heat treatment apparatus 1. exposed to light. That is, the heat treatment apparatus 1 performs a post-exposure bake (PEB) to diffuse acid generated by exposure into the resist film.

熱処理装置１は、筐体１１を備え、筐体１１の側壁には、ウエハＷの搬送口１２が設けられている。筐体１１内において搬送口１２が開口している側を前方側とすると、筐体１１内の後方側には、筐体１１の底面に支持柱２３を介して設置された水平な円形の熱板２が設けられている。熱板２の上面にはウエハＷを支持するギャップピン２２が多数分散して設けられている。また熱板２には、例えば発熱抵抗体からなるヒーター２１が埋設され、熱板２に載置されたウエハＷを、第１の温度、例えば１１０℃に加熱処理できるように構成されている。熱板２には、熱板２を厚さ方向に貫通する貫通孔３０が周方向に３カ所設けられている。各貫通孔３０には垂直な昇降ピン３１が挿通されている。各昇降ピン３１は、昇降板３２を介して筐体１１の底面に設置された昇降機構３３に接続され、各昇降ピン３１は、昇降機構３３により昇降し、昇降ピン３１の先端は熱板２の表面において突没する。図１中の９４は、ヒーター２１を昇温させるための電源部である。 The heat treatment apparatus 1 includes a housing 11 , and a transfer port 12 for wafers W is provided on a side wall of the housing 11 . Assuming that the side of the housing 11 where the transfer port 12 is open is the front side, on the rear side of the housing 11 is a horizontal circular heat sink installed on the bottom surface of the housing 11 via support columns 23 . A plate 2 is provided. A large number of gap pins 22 for supporting the wafer W are dispersedly provided on the upper surface of the hot plate 2 . A heater 21 made of, for example, a heating resistor is embedded in the hot plate 2 so that the wafer W placed on the hot plate 2 can be heated to a first temperature, for example, 110.degree. The hot plate 2 is provided with three through holes 30 extending through the hot plate 2 in the thickness direction. A vertical elevating pin 31 is inserted through each through hole 30 . Each lifting pin 31 is connected via a lifting plate 32 to a lifting mechanism 33 installed on the bottom surface of the housing 11 . plunges into the surface of Reference numeral 94 in FIG. 1 denotes a power supply unit for raising the temperature of the heater 21 .

熱板２の上方には、熱板２に載置されたウエハＷを囲むように、底面側が開口した扁平な円筒形のカバー２４が設けられる。カバー２４は、支持部２５を介して昇降機構２６に接続され、カバー２４は、熱板２上において昇降する。ウエハＷを加熱処理する際には、図１に示すようにカバー２４の側壁の下端は熱板２に接し、カバー２４と熱板２とにより、ウエハＷの周囲が区画され、ウエハＷを熱板２に受け渡すときには、カバー２４が上昇し、ウエハＷの周囲が開放される。 A flat cylindrical cover 24 whose bottom side is open is provided above the hot plate 2 so as to surround the wafer W placed on the hot plate 2 . The cover 24 is connected to an elevating mechanism 26 via a support portion 25 , and the cover 24 elevates on the hot plate 2 . When the wafer W is heat-treated, the lower end of the side wall of the cover 24 is in contact with the hot plate 2 as shown in FIG. When the wafer W is transferred to the plate 2, the cover 24 is raised and the periphery of the wafer W is opened.

筐体１１内の前方側（搬送口１２側）には、搬送体である搬送アーム４が設けられる。搬送アーム４は、水平な概略円板状の支持部である支持プレート４０を備え、支持プレート４０の表面にウエハＷが載置される。この支持プレート４０は支持部材４２を介して接続された移動機構４３により前後方向に移動し、熱板２の上方領域と、熱板２の横方向に外れた外側領域（図１に示す位置）と、の間で移動することができる。 A transport arm 4 as a transport body is provided on the front side (on the transport port 12 side) in the housing 11 . The transfer arm 4 includes a support plate 40 which is a substantially horizontal disk-shaped support portion, and the wafer W is placed on the surface of the support plate 40 . This support plate 40 is moved in the front-rear direction by a moving mechanism 43 connected via a support member 42, so that the upper region of the hot plate 2 and the outer region outside the hot plate 2 in the horizontal direction (the position shown in FIG. 1). and can be moved between

搬送アーム４が外側領域に位置するときに、ウエハＷを保持した熱処理装置１の外部の搬送機構が搬送口１２から筐体１１内に進入し、支持プレート４０の上方から下方に昇降することで、当該外部の搬送機構とアーム３４との間でウエハＷの受け渡しが行われる。なおこの例では、外部の搬送機構は、ウエハＷの周縁部を等間隔に４か所下方側から支持するように構成されている。従ってウエハＷを受け渡す時に搬送機構と支持プレート４０とが互いに干渉し合うことを避けるため、支持プレート４０の周縁には、等間隔に４か所の切り欠き４４が形成されている。また図２に示すように支持プレート４０には、後端から前方側に向けてスリット４５が形成されている。このスリット４５により熱板２上に支持プレート４０が位置したときに、熱板２から突没する昇降ピン３１が当該スリット４５を介して支持プレート４０上に突出することができ、昇降ピン３１の昇降と搬送アーム４の進退との協働により、熱板２と支持プレート４０との間でウエハＷの受け渡しが行われる。昇降ピン３１は、受け渡し機構に相当する。 When the transfer arm 4 is positioned in the outer region, the transfer mechanism outside the heat treatment apparatus 1 holding the wafer W enters the housing 11 through the transfer port 12 and moves up and down from above the support plate 40. , the transfer of the wafer W is performed between the external transfer mechanism and the arm 34 . In this example, the external transfer mechanism is configured to support the peripheral portion of the wafer W from the lower side at four locations at equal intervals. Therefore, in order to prevent the transfer mechanism and the support plate 40 from interfering with each other when transferring the wafer W, four cutouts 44 are formed at equal intervals on the peripheral edge of the support plate 40 . Further, as shown in FIG. 2, the support plate 40 is formed with a slit 45 extending from the rear end toward the front side. When the support plate 40 is positioned on the hot plate 2 due to the slit 45 , the lift pins 31 protruding from the heat plate 2 can protrude above the support plate 40 through the slits 45 . The wafer W is transferred between the hot plate 2 and the support plate 40 by cooperation of the lifting and retraction of the transfer arm 4 . The lifting pin 31 corresponds to a delivery mechanism.

また支持プレート４０の内部には、加熱機構及び冷却機構を兼用するペルチェ素子部４１が埋設されている。ペルチェ素子部４１は、ペルチェ素子部４１に供給する電流の向きを切り替えて、支持プレート４０を第２の温度、例えば４０℃で加熱する加熱状態と、第３の温度、例えば２３℃で冷却する冷却状態とに切り替える温冷切り替え部９５に接続されている。なお温冷切り替え部９５は、ペルチェ素子部４１に供給する電流の大きさを調整して、ペルチェ素子部４１の加熱温度及び冷却温度を調整できるように構成してもよい。ペルチェ素子部４１は、例えば前後２行左右２列の２×２の行列状に４分割されており、支持プレート４０に載置されたウエハＷの全面を均一に加熱あるいは冷却できるように構成されている。このように熱処理装置１においては、熱板２の上方領域とその外側領域との間でウエハＷを直接搬送する搬送体である搬送アーム４に設けられた支持プレート４０によりウエハＷの加熱及び冷却を行う。即ちウエハＷを温度調整する搬送体と、熱板２の上方領域へウエハＷを搬送する搬送体とが一体となっている。 A Peltier element 41 that serves as both a heating mechanism and a cooling mechanism is embedded inside the support plate 40 . The Peltier element unit 41 switches the direction of the current supplied to the Peltier element unit 41 to heat the support plate 40 at a second temperature, such as 40°C, and cool it at a third temperature, such as 23°C. It is connected to a hot/cold switching unit 95 for switching between a cooling state and a cooling state. The hot/cool switching unit 95 may be configured to adjust the heating temperature and cooling temperature of the Peltier element unit 41 by adjusting the magnitude of the current supplied to the Peltier element unit 41 . The Peltier element unit 41 is divided into four, for example, in a 2×2 matrix of two rows in the front and back and two columns in the left and right, so that the entire surface of the wafer W placed on the support plate 40 can be uniformly heated or cooled. ing. As described above, in the heat treatment apparatus 1, the wafer W is heated and cooled by the support plate 40 provided on the transfer arm 4, which is a transfer body that directly transfers the wafer W between the upper region of the hot plate 2 and the outer region thereof. I do. That is, the carrier for adjusting the temperature of the wafer W and the carrier for carrying the wafer W to the upper region of the hot plate 2 are integrated.

図３に示すように熱処理装置１は、例えばコンピュータからなる制御部９を備えている。制御部９は、ＣＰＵ９１、メモリ９２、プログラム格納部９３を備えている。図３中の９０はバスである。また制御部９は、温冷切り替え部９５、ヒーター２１を加熱する電源部９４、搬送アーム４の移動機構４３、各昇降機構３３、２６（図３中では、カバー２４の昇降機構は省略している）に制御信号を出力できるように構成されている。 As shown in FIG. 3, the heat treatment apparatus 1 includes a control section 9, for example, a computer. The control section 9 includes a CPU 91 , a memory 92 and a program storage section 93 . 90 in FIG. 3 is a bus. The control unit 9 also includes a hot/cold switching unit 95, a power supply unit 94 for heating the heater 21, a moving mechanism 43 for the transfer arm 4, and lifting mechanisms 33 and 26 (the lifting mechanism for the cover 24 is omitted in FIG. 3). is configured to output a control signal to the

プログラム格納部９３には、後述する熱処理装置１の作用に示すペルチェ素子部４１の加熱状態と冷却状態との切り替えの制御、搬送アーム４の移動、カバー２４の昇降、ウエハＷの受け渡し等のシーケンスが実施されるように命令（ステップ群）が組まれた、プログラムが格納される。このプログラムは、例えばコンパクトディスク、ハードディスク、ＭＯ（光磁気ディスク）、ＤＶＤ、メモリーカードなどの記憶媒体により格納されて制御部９にインストールされる。 In the program storage unit 93, sequences such as control of switching between the heating state and the cooling state of the Peltier element unit 41, movement of the transfer arm 4, lifting and lowering of the cover 24, transfer of the wafer W, etc., which are shown in the operation of the heat treatment apparatus 1 to be described later, are stored. A program is stored in which instructions (steps) are assembled so that This program is stored in a storage medium such as a compact disk, hard disk, MO (magneto-optical disk), DVD, or memory card and installed in the control unit 9 .

続いて本実施の形態に係る熱処理装置１の作用について図４～図９の模式図を用いて説明する。化学増幅型のレジスト膜が形成され露光処理が行われたウエハＷは、筐体１１の外部の搬送機構Ａ５により筐体１１内に搬送される。熱処理装置１においては、ウエハＷが搬送される前に、熱板２が例えば１１０℃に加熱され、支持プレート４０は、例えば２３℃に冷却された冷却状態にて外側領域に待機している。図４～図９においては、支持プレート４０が冷却状態（２３℃）の時には、支持プレート４０から破線の矢印を伸ばして示し、支持プレート４０が加熱状態のときには、支持プレート４０から実線の波型の矢印を伸ばして示している。熱板２に載置されたウエハＷが加熱されているときも熱板２から実線の波型の矢印を伸ばして示している。 Next, the operation of the heat treatment apparatus 1 according to this embodiment will be described with reference to the schematic diagrams of FIGS. 4 to 9. FIG. The wafer W on which the chemically amplified resist film is formed and subjected to the exposure process is transported into the housing 11 by the transport mechanism A5 outside the housing 11 . In the heat treatment apparatus 1, the hot plate 2 is heated to, for example, 110.degree. In FIGS. 4 to 9, when the support plate 40 is in a cooled state (23° C.), a dashed arrow extends from the support plate 40, and when the support plate 40 is in a heated state, a solid wavy line extends from the support plate 40. The arrow of is extended and shown. When the wafer W placed on the hot plate 2 is being heated, the solid wavy arrow is shown extending from the hot plate 2 .

まず図４に示すように熱処理装置１内に熱処理対象のウエハＷを保持した搬送機構Ａ５を進入させ、支持プレート４０の上方から下方に移動させてウエハＷを支持プレート４０上に載置する。そして例えば図５に示すようにウエハＷが支持プレート４０に載置されると同時に、ペルチェ素子部４１を冷却状態から加熱状態に切り替える。これによりウエハＷの温度は冷却温度である２３℃から、レジスト膜の内部において酸が拡散を開始する温度の下限よりも低い温度、例えば４０℃まで昇温する。 First, as shown in FIG. 4, the transfer mechanism A5 holding the wafer W to be heat-treated enters the heat treatment apparatus 1 and moves from above the support plate 40 downward to place the wafer W on the support plate 40. As shown in FIG. Then, for example, as shown in FIG. 5, at the same time when the wafer W is placed on the support plate 40, the Peltier element section 41 is switched from the cooling state to the heating state. As a result, the temperature of the wafer W is raised from the cooling temperature of 23.degree.

次いで図６に示すように熱板２側のカバー２４を上昇させ、支持プレート４０を加熱状態にしたまま、熱板２の直上の上方領域に移動させる。さらに昇降ピン３１により支持プレート４０に支持されたウエハＷを突き上げて受け取り、支持プレート４０を外側領域に退避させる。その後図７に示すように昇降ピン３１を下降させて熱板２にウエハＷを載置し、カバー２４を下降させる。これによりウエハＷが熱板２によりさらに１１０℃に加熱され、ウエハＷの面内で酸拡散反応が進行する。支持プレート４０においては、ウエハＷを昇降ピン３１に受け渡した後は、ペルチェ素子部４１を冷却状態に切り替え、外側領域にて待機する。 Next, as shown in FIG. 6, the cover 24 on the side of the hot plate 2 is lifted and moved to a region directly above the hot plate 2 while the support plate 40 is kept in a heated state. Further, the lifting pins 31 push up and receive the wafer W supported by the support plate 40, and the support plate 40 is retracted to the outer region. Thereafter, as shown in FIG. 7, the elevating pins 31 are lowered to place the wafer W on the hot plate 2, and the cover 24 is lowered. As a result, the wafer W is further heated to 110.degree. In the support plate 40, after the wafer W is transferred to the lifting pins 31, the Peltier element portion 41 is switched to a cooling state and waits in the outer region.

そしてウエハＷの加熱が完了すると、昇降ピン３１により熱板２上のウエハＷを突き上げ、支持プレート４０を冷却状態としたまま、上方領域に移動させる。さらに図８に示すように昇降ピン３１を下降させてウエハＷを支持プレート４０に受け渡す。支持プレート４０は、ウエハＷを受け取ると図９に示すように速やかに外側領域に移動する。支持プレート４０は、予め冷却状態に切り替えられているため、支持プレート４０に載置された直後からウエハＷの冷却が開始される。そして、支持プレート４０はウエハＷを熱板２上へ搬送したときよりも低い温度であるため、載置されたウエハＷの温度は急激に低下し、ウエハＷの面内全体で酸拡散反応が停止する。 When the heating of the wafer W is completed, the wafer W on the hot plate 2 is pushed up by the lifting pins 31 and moved to the upper area while the support plate 40 is kept in the cooled state. Further, as shown in FIG. 8, the elevating pins 31 are lowered to transfer the wafer W to the support plate 40 . When the support plate 40 receives the wafer W, it quickly moves to the outer region as shown in FIG. Since the support plate 40 is switched to the cooling state in advance, cooling of the wafer W starts immediately after being placed on the support plate 40 . Since the temperature of the support plate 40 is lower than that when the wafer W is transferred onto the hot plate 2, the temperature of the mounted wafer W drops rapidly, and the acid diffusion reaction occurs over the entire surface of the wafer W. Stop.

そして搬送アーム４が外側位置に待機している間にウエハＷは、例えば２３℃まで冷却される。その後例えば外部の搬送機構Ａ５を支持プレート４０の下方に進入させ、搬送機構Ａ５を上昇させる。これにより支持プレート４０に載置されたウエハＷが搬送機構Ａ５に受け渡される。この後支持プレート４０は、冷却状態を維持したまま外側領域にて、後続のウエハＷを搬送するために待機する。後続のウエハＷについても、先に処理されたウエハＷと同様に処理が行われる。つまり、既述した手順で処理が行われる。 The wafer W is cooled to, for example, 23° C. while the transfer arm 4 is waiting at the outer position. After that, for example, the external transport mechanism A5 is advanced below the support plate 40 to raise the transport mechanism A5. As a result, the wafer W placed on the support plate 40 is transferred to the transfer mechanism A5. After that, the support plate 40 stands by in order to transfer the succeeding wafer W in the outer region while maintaining the cooled state. Subsequent wafers W are also processed in the same manner as previously processed wafers W. FIG. That is, the processing is performed according to the procedure described above.

ここで、上記のように熱板２に載置前のウエハＷを支持プレート４０により加熱する理由について説明する。熱処理装置１から搬出されたウエハＷは、現像装置に搬送される。現像装置においては、ウエハＷに現像液を供給してレジスト膜に露光されたパターンを現像する。化学増幅型レジストを塗布したウエハＷにおいては、露光処理を行った後、例えば１１０℃に加熱することにより、レジスト中に酸が拡散する。この酸によりネガ型のレジストの場合には露光されていない領域が現像液に可溶となり、ポジ型のレジストの場合には露光された領域が現像液に可溶になる。この時ウエハＷを面内で均一に加熱することにより、レジスト膜中に酸が均一に拡散し、現像処理を行った時の線幅が均一になる。 Here, the reason why the wafer W before being placed on the hot plate 2 is heated by the support plate 40 as described above will be described. The wafer W unloaded from the heat treatment apparatus 1 is transferred to the developing apparatus. In the developing device, a developer is supplied to the wafer W to develop the exposed pattern on the resist film. In the wafer W coated with the chemically amplified resist, the acid is diffused into the resist by heating to, for example, 110° C. after the exposure process. The acid renders the unexposed areas soluble in the developer in the case of a negative resist and the exposed areas in the case of a positive resist. At this time, by heating the wafer W uniformly in the plane, the acid is uniformly diffused in the resist film, and the line width becomes uniform when the development processing is performed.

しかしながらウエハＷを熱板２においた直後は、当該ウエハＷの面内において温度の均一性を制御しにくく、具体的には、ウエハＷの面内で昇温過度特性（昇温を開始した後、温度が一定になるまでの温度変化の特性）に差が生じてしまう。つまり、ウエハＷの温度を面内で均一に維持したまま目標温度まで上昇させることは難しい。とりわけ熱板２の温度と、ウエハＷの温度と、の差が大きい場合には、ウエハＷの面内で昇温過度特性についての差が生じやすくなる。そしてウエハＷの面内で昇温過度特性に差が生じると、ウエハＷの面内において熱履歴に差が生じてしまい、ウエハＷの面内において酸の拡散具合がばらつき、現像処理時にパターンの線幅の均一性が悪くなるおそれがある。近年では熱板２のヒーターパターンの最適化や制御などにより昇温過度特性の向上を図っているがパターンの微細化を図る上で更なる改善が求められている。 However, immediately after the wafer W is placed on the hot plate 2, it is difficult to control the temperature uniformity within the surface of the wafer W. , characteristics of temperature change until the temperature becomes constant). In other words, it is difficult to raise the temperature of the wafer W to the target temperature while maintaining the temperature of the wafer W uniformly within the plane. In particular, when the difference between the temperature of the hot plate 2 and the temperature of the wafer W is large, the difference in the temperature rise transient characteristics within the surface of the wafer W tends to occur. If there is a difference in temperature rise transient characteristics within the wafer W, a difference in thermal hysteresis will occur within the wafer W, causing variations in diffusion of acid within the wafer W, resulting in pattern distortion during development processing. Line width uniformity may deteriorate. In recent years, attempts have been made to improve the temperature rise characteristics by optimizing and controlling the heater pattern of the hot plate 2, but there is a demand for further improvement in terms of miniaturization of the pattern.

そこで、上述の実施の形態によれば、露光後のレジスト膜が形成された現像前のウエハＷを熱処理する熱処理装置１において、ウエハＷをレジスト膜中の酸が拡散する第１の温度で加熱する熱板２を設けている。さらに熱板２の上方領域と、上方領域から横方向に外れた外側領域との間で、支持プレート４０に載置されたウエハＷを搬送する搬送アーム４を設けている。そして外側領域にて熱板２による加熱を行う前に支持プレート４０に載置されたウエハＷをレジスト膜中の酸が拡散する温度よりも低い第２の温度で加熱するように構成し、熱板２で加熱処理を行ったウエハＷを支持プレート４０にて外側領域に搬送するときに第２の温度よりも低い第３の温度で冷却するようにしている。 Therefore, according to the above-described embodiment, in the heat treatment apparatus 1 for heat-treating the wafer W on which the post-exposure resist film is formed and before development, the wafer W is heated at the first temperature at which the acid in the resist film diffuses. A hot plate 2 for heating is provided. Further, a transfer arm 4 for transferring the wafer W mounted on the support plate 40 is provided between the upper region of the hot plate 2 and the outer region laterally deviated from the upper region. Before heating by the hot plate 2 in the outer region, the wafer W placed on the support plate 40 is heated at a second temperature lower than the temperature at which the acid in the resist film diffuses. When the wafer W heat-treated by the plate 2 is transported to the outer region by the support plate 40, it is cooled at a third temperature lower than the second temperature.

そのため熱処理装置１に搬入されたウエハＷを熱板２に受け渡す前に予めレジスト膜が反応する温度よりも低い温度に加熱し、その後熱板２に受け渡すことができる。従って熱板２に載置した後のウエハＷの第１の温度と熱板２に載置される前のウエハＷの温度との差が小さくなり、ウエハＷの面内において、昇温過度特性の差が小さくなるため、ウエハＷの面内で均一性高く反応が進む。そして、その後、ウエハＷの第３の温度で冷却することで、面内全体で同時に反応を停止させる。このように処理が行われることで、ウエハＷの面内各部で均一性高くレジスト膜を反応させることができる。従って、当該ウエハＷを現像したときにパターンの線幅を均一にすることができる。 Therefore, the wafer W loaded into the heat treatment apparatus 1 can be heated to a temperature lower than the reaction temperature of the resist film before being transferred to the hot plate 2 and then transferred to the hot plate 2 . Therefore, the difference between the first temperature of the wafer W after being placed on the hot plate 2 and the temperature of the wafer W before being placed on the hot plate 2 becomes small, and the temperature rise transient characteristic in the plane of the wafer W is reduced. , the reaction proceeds with high uniformity within the wafer W surface. After that, the wafer W is cooled at the third temperature to simultaneously stop the reaction in the entire surface. By performing the processing in this manner, the resist film can be caused to react with high uniformity in each portion of the wafer W surface. Therefore, when the wafer W is developed, the line width of the pattern can be made uniform.

なお、上記した引用文献１の装置では熱板が含まれる容器内に設けられる加熱部により、熱板に載置前のウエハＷを加熱する。そのため、容器内の温度分布の影響を受けることになるので、ウエハＷの面内で精度高く温度を制御することは難しいと考えられる。従って、熱処理装置１では、引用文献１の装置よりもウエハＷの面内で均一性高い処理を行うことができる。 In addition, in the apparatus of the above-mentioned cited document 1, the wafer W before being placed on the hot plate is heated by a heating unit provided in a container containing the hot plate. Therefore, it is considered that it is difficult to control the temperature within the plane of the wafer W with high accuracy because it is affected by the temperature distribution in the container. Therefore, the heat treatment apparatus 1 can perform a process with higher uniformity within the surface of the wafer W than the apparatus of Cited Document 1. FIG.

ところで上記の熱処理装置１による処理においては、熱板２にウエハＷを受け渡した後、支持プレート４０が加熱状態から冷却状態に切り替わり、熱板２によるウエハＷの加熱と、支持プレート４０の降温とが並行して行われる。従って、熱板２による処理完了後、速やかに支持プレート４０によりウエハＷを冷却し、過剰に反応が進行することを防ぐことができる。また熱板２による処理完了後に支持プレート４０を冷却するために必要な時間を設ける必要が無いのでスループットの低下を防ぐことができる。
なお、支持プレート４０を加熱状態から冷却状態に切り替えるタイミングとしては、上記の例には限られず、例えばウエハＷを昇降ピン３１に受け渡す直前であってもよいし、支持プレート４０が外側領域に移動後であってもよい。 By the way, in the processing by the heat treatment apparatus 1, after the wafer W is transferred to the hot plate 2, the support plate 40 is switched from the heating state to the cooling state. are performed in parallel. Therefore, the wafer W can be quickly cooled by the support plate 40 after the processing by the hot plate 2 is completed, and the reaction can be prevented from progressing excessively. In addition, since it is not necessary to provide the time necessary for cooling the support plate 40 after the completion of the processing by the hot plate 2, it is possible to prevent a decrease in throughput.
The timing for switching the support plate 40 from the heating state to the cooling state is not limited to the above example, and may be, for example, immediately before the wafer W is transferred to the lifting pins 31, or when the support plate 40 is in the outer region. It may be after moving.

また、上記の熱処理装置１による処理においては、支持プレート４０にウエハＷが載置されると同時に支持プレート４０が加熱状態となり昇温が開始される。ウエハＷが急激に比較的高い温度とされると当該ウエハＷに反りが発生する懸念が有る。そして、この反りによって熱処理装置１においてウエハＷの面内各部の反応にばらつきが生じるおそれが有る。しかし、上記のようにウエハＷが載置されるタイミングで支持プレート４０の加熱を開始しているので、そのような不具合を防ぐことができる。 Further, in the processing by the heat treatment apparatus 1, the support plate 40 is brought into a heated state at the same time when the wafer W is placed on the support plate 40, and the temperature rise is started. If the temperature of the wafer W is abruptly increased to a relatively high temperature, there is a concern that the wafer W may be warped. This warping may cause variations in the reactions of the wafer W in the heat treatment apparatus 1 . However, since the heating of the support plate 40 is started at the timing when the wafer W is placed as described above, such a problem can be prevented.

また、熱処理装置１に順次搬送される各ウエハＷについてこのようなタイミングで支持プレート４０による加熱が行われるので、ウエハＷ間で支持プレート４０による加熱が開始されてから、熱板４０へ受け渡されて支持プレート４０による加熱が終了するまでの時間の長さが揃うことになる。従って、上記のように支持プレート４０の昇温開始のタイミングを制御することは、ウエハＷ間で均一性高い処理を行うことにもなる。なお、ウエハＷが載置されるタイミングと支持プレート４０が加熱状態に切り替わるタイミングとが同時と説明してきたが、ウエハＷが支持プレート４０に載置されてから所定の時間が経過した後に支持プレート４０の加熱状態への切り替えが行われるようにしてもよい。 Further, since the wafers W sequentially transferred to the heat treatment apparatus 1 are heated by the support plate 40 at such timing, the wafers W are transferred to the hot plate 40 after the heating by the support plate 40 is started between the wafers W. Thus, the length of time until the heating by the support plate 40 ends is uniform. Therefore, by controlling the timing of starting the temperature rise of the support plate 40 as described above, the wafers W can be treated with high uniformity. It has been described that the timing at which the wafer W is placed and the timing at which the support plate 40 is switched to the heated state are simultaneous. A switch to the heating state of 40 may be performed.

ところで、例えば先のウエハＷを熱処理装置１から搬出するために支持プレート４０により冷却した後、後続のウエハＷを支持プレート４０に載置する前に支持プレート４０の温度を上昇させて所定の温度にし、当該所定の温度になった支持プレート４０に後続のウエハＷを載置して加熱することも考えられる。つまり、上記のように複数のウエハＷを熱処理装置１に順次搬送して処理するにあたり、各ウエハＷを支持プレート４０に搬送する前に、支持プレート４０が所定の温度になるように加熱しておいてもよい。ただし、その場合、搬送機構Ａ５による各ウエハＷの搬送状況によっては、熱処理装置１へのウエハＷの搬送時に支持プレート４０が所定の温度に到達しておらず、当該搬送機構Ａ５がウエハＷを支持プレート４０に受け渡せずに待機させる必要が生じることが考えられる。従って、そのような待機時間が生じることを防いでスループットを向上させるために、支持プレート４０の冷却状態から加熱状態の切り替えは、既述のように支持プレート４０へのウエハＷの載置後あるいは載置と同時に行うことが好ましい。 By the way, for example, after the previous wafer W is cooled by the support plate 40 in order to be unloaded from the heat treatment apparatus 1, the temperature of the support plate 40 is raised before the subsequent wafer W is mounted on the support plate 40 to reach a predetermined temperature. It is conceivable to heat the subsequent wafer W by placing it on the support plate 40 which has reached the predetermined temperature. That is, when a plurality of wafers W are sequentially transferred to the heat treatment apparatus 1 and processed as described above, the support plate 40 is heated to a predetermined temperature before each wafer W is transferred to the support plate 40 . You can leave it. However, in that case, depending on the transport status of each wafer W by the transport mechanism A5, the support plate 40 has not reached the predetermined temperature when the wafer W is transported to the heat treatment apparatus 1, and the transport mechanism A5 transports the wafer W. It is conceivable that it may be necessary to wait without handing over to the support plate 40 . Therefore, in order to prevent the occurrence of such waiting time and improve the throughput, the switching of the support plate 40 from the cooling state to the heating state is performed after the wafer W is placed on the support plate 40 or It is preferable to carry out at the same time as placing.

また、ウエハＷの面内及び複数のウエハＷ間で均一な処理を行うためには、支持プレート４０により加熱されたウエハＷの温度が上記の第２の温度で安定した状態でウエハＷをオーブンに搬入する（熱板２の上方領域に位置させる）ことが好ましい。つまりウエハＷの温度が第２の温度に到達してから、オーブンへの搬入されるまでに十分な時間を確保することが好ましい。ただし、ウエハＷが支持プレート４０に載置されてからオーブンへ搬入されるまでの時間が長すぎると、スループットの低下を招くし、レジスト膜が変質するおそれが有る。そこで、オーブンにウエハＷを搬入する予定のタイミングに応じて、ウエハＷを載置した支持プレート４０の冷却状態から加熱状態への切り替えのタイミングを調整するように制御を行うことが好ましい。言い換えると、オーブンにウエハＷが搬入されるタイミングと支持プレート４０による加熱が開始されるタイミングとの時間が所定の時間になるように制御することが好ましい。 Further, in order to perform uniform processing within the surface of the wafer W and among a plurality of wafers W, the wafer W heated by the support plate 40 is placed in an oven while the temperature of the wafer W is stabilized at the second temperature. (located in the upper region of the hot plate 2). In other words, it is preferable to secure a sufficient time from when the temperature of the wafer W reaches the second temperature to when it is loaded into the oven. However, if the time from when the wafer W is placed on the support plate 40 to when it is carried into the oven is too long, the throughput may be lowered and the resist film may deteriorate. Therefore, it is preferable to control the timing of switching from the cooling state to the heating state of the support plate 40 on which the wafer W is placed in accordance with the scheduled timing of loading the wafer W into the oven. In other words, it is preferable to control the time between the timing when the wafer W is loaded into the oven and the timing when the heating by the support plate 40 is started to be a predetermined time.

このような制御の具体的な一例を述べる。例えば熱板２の温度の変更中はウエハＷをオーブンに搬入できないものとする。支持プレート４０にウエハＷが載置されたとき、上記の一連の動作により支持プレート４０が上方領域に位置する予定のタイミングがオーブンにウエハＷを搬入できない期間と重なる場合、その搬入できない期間の終了後に支持プレート４０が上方領域に位置するように加熱状態の切り替えのタイミングを遅らせる。つまり、ウエハＷを支持プレート４０に載置すると同時に支持プレート４０による加熱を行うのではなく、支持プレート４０に待機させた後に当該加熱を開始し、この加熱開始からオーブン搬入までの時間が予定された時間からずれないようにする。 A specific example of such control will be described. For example, it is assumed that the wafer W cannot be loaded into the oven while the temperature of the hot plate 2 is being changed. When the wafer W is placed on the support plate 40, if the scheduled timing at which the support plate 40 is positioned in the upper region by the series of operations described above coincides with the period during which the wafer W cannot be loaded into the oven, the period during which the wafer W cannot be loaded ends. The timing of switching the heating state is delayed so that the support plate 40 is positioned in the upper region later. That is, instead of heating the wafer W by the support plate 40 at the same time as the wafer W is placed on the support plate 40, the heating is started after the support plate 40 waits, and the time from the start of this heating to the carrying into the oven is scheduled. Do not deviate from the set time.

熱処理装置１は、ウエハＷを加熱して熱板２に受け渡す搬送アーム４と、熱板２で加熱したウエハＷを受け取り冷却する搬送アーム４と、を各々個別に備えていてもよい。例えば図１、図２に示した熱処理装置１の搬送アーム４に代えて、図１０に示すように熱板２の前方側に、加熱アーム４Ａと、冷却アーム４Ｂと、を上下に積層して設ける。加熱アーム４Ａと、冷却アーム４Ｂと、は、各々支持プレート４００を備え、加熱アーム４Ａの支持プレート４０には、ヒーター４１Ａを埋設し、冷却アーム４Ｂには、例えば冷却水を通流できるように構成した水冷管４１Ｂを埋設すればよい。 The heat treatment apparatus 1 may separately include a transfer arm 4 that heats the wafer W and transfers it to the hot plate 2 and a transfer arm 4 that receives and cools the wafer W heated by the hot plate 2 . For example, in place of the transfer arm 4 of the heat treatment apparatus 1 shown in FIGS. 1 and 2, a heating arm 4A and a cooling arm 4B are vertically stacked in front of the hot plate 2 as shown in FIG. prepare. The heating arm 4A and the cooling arm 4B each have a support plate 400. A heater 41A is embedded in the support plate 40 of the heating arm 4A, and cooling water, for example, can flow through the cooling arm 4B. The configured water-cooled pipe 41B may be buried.

さらに夫々個別に外側領域と熱板２の上方領域との間を移動できるように構成すればよい。図１０中４２Ａ、４２Ｂは、夫々加熱アーム４Ａ、冷却アーム４Ｂの支持プレート４０を支持する支持部であり、４３０は、加熱アーム４Ａ、冷却アーム４Ｂを個別に移動させる移動機構である。なお図１０の例では、昇降ピン３１と同様に構成された昇降ピン３４を設け、昇降ピン３４を昇降板３５を介して昇降機構３６に接続している。そして昇降ピン３４と、外部の搬送機構との協働作用により受け渡しを行うように構成している。 Furthermore, it is sufficient to configure them so that they can move individually between the outer region and the upper region of the hot plate 2 . Reference numerals 42A and 42B in FIG. 10 denote support portions that support the support plates 40 of the heating arm 4A and cooling arm 4B, respectively, and 430 denotes a moving mechanism that moves the heating arm 4A and cooling arm 4B individually. In the example of FIG. 10, a lifting pin 34 configured similarly to the lifting pin 31 is provided, and the lifting pin 34 is connected to a lifting mechanism 36 via a lifting plate 35 . Then, it is configured to perform delivery by cooperative action of the lifting pin 34 and an external transport mechanism.

そして加熱処理前のウエハＷを２３℃の温度とした加熱アーム４Ａに載置し、その後２３℃から４０℃に昇温する。さらに加熱アーム４Ａを上方領域に移動させてウエハＷを熱板２に受け渡す。さらに加熱処理後のウエハＷを冷却アーム４Ｂで受けとり、２３℃に冷却する。さらに冷却アーム４Ｂから外部の搬送機構にウエハＷを受け渡すにあたっては、加熱アーム４Ａを熱板２の上方領域に移動させ冷却アーム４Ｂに載置されたウエハＷを昇降ピン３４で突き上げ、外部の搬送機構に受け渡すようにすればよい。またこのようにウエハＷを加熱して搬送する加熱アーム４Ａと、ウエハＷを冷却して搬送する冷却アーム４Ｂとを上下に配置することで、熱処理装置１内に複数の搬送アーム４を設けた場合にも、装置のフットプリントの大型化を避けることができる効果がある。さらには図１、図２のように１台の搬送アーム４によりウエハＷの加熱状態と、冷却状態とを切り替えることができるように構成することでウエハＷを第２の温度に加熱する搬送アーム４と、第３の温度に冷却する搬送アーム４とを個別に設ける必要がなく装置の大型化を抑制できる効果がある。 Then, the wafer W before heat treatment is placed on the heating arm 4A having a temperature of 23.degree. Further, the heating arm 4A is moved to the upper region to transfer the wafer W to the heating plate 2. As shown in FIG. Further, the wafer W after heat treatment is received by the cooling arm 4B and cooled to 23.degree. Furthermore, when transferring the wafer W from the cooling arm 4B to the external transfer mechanism, the heating arm 4A is moved to the upper region of the hot plate 2, and the wafer W placed on the cooling arm 4B is pushed up by the elevating pins 34. It may be delivered to the transport mechanism. By arranging the heating arm 4A that heats and transports the wafer W and the cooling arm 4B that cools and transports the wafer W, a plurality of transport arms 4 are provided in the heat treatment apparatus 1. Also in this case, there is an effect that an increase in the footprint of the device can be avoided. Further, as shown in FIGS. 1 and 2, a single transfer arm 4 can switch between a heating state and a cooling state of the wafer W, thereby heating the wafer W to a second temperature. 4 and the transfer arm 4 for cooling to the third temperature are not required to be provided separately, which has the effect of suppressing an increase in the size of the apparatus.

また支持プレート４０内に、温調水の配管及び冷却水の配管、あるいはヒータ及び冷却機構を埋設してもよい。図１、図２に示した熱処理装置１においては、支持プレート４０に供給される電流の向きにより加熱と冷却とを切り替えることができるペルチェ素子部４１を設けている。そのためウエハＷを第２の温度に加熱する加熱機構と、第３の温度に冷却する冷却機構とを個別に設ける必要がなく装置の大型化やレイアウトの複雑化を避けることができる。 Further, a temperature control water pipe, a cooling water pipe, or a heater and a cooling mechanism may be embedded in the support plate 40 . The heat treatment apparatus 1 shown in FIGS. 1 and 2 is provided with a Peltier element section 41 capable of switching between heating and cooling depending on the direction of current supplied to the support plate 40 . Therefore, it is not necessary to separately provide a heating mechanism for heating the wafer W to the second temperature and a cooling mechanism for cooling the wafer W to the third temperature.

また露光後のレジスト膜を熱板２に載置して加熱するときの加熱温度は、１１０℃程度であることから、支持プレート４０にてウエハＷを加熱するときには、雰囲気の温度よりも高い第２の温度、例えば２０℃から７０℃に加熱するようにすればよい。一般に、熱板２による加熱温度はレジスト種毎の推奨処理温度から決定されるが、厳密にはレジスト膜はそれよりも低い温度から少なからず反応は始まる。換言すると、レジスト膜の反応開始温度は、熱板２による加熱温度よりも低い。つまり、第２の温度は、少なくとも常温（装置内雰囲気温度）より高くレジスト膜の反応開始温度以下であるべきであり、今回の様に熱板２による加熱温度に対し２０％以上低く設定される場合がある。 Further, since the heating temperature when the exposed resist film is placed on the hot plate 2 and heated is about 110° C., when the wafer W is heated by the support plate 40, the first temperature higher than the temperature of the atmosphere is used. 2, for example, from 20°C to 70°C. In general, the heating temperature of the hot plate 2 is determined from the recommended treatment temperature for each type of resist, but strictly speaking, the reaction of the resist film starts at a temperature lower than that. In other words, the reaction initiation temperature of the resist film is lower than the heating temperature of the hot plate 2 . That is, the second temperature should be at least higher than room temperature (atmospheric temperature in the apparatus) and lower than the reaction start temperature of the resist film, and is set at least 20% lower than the heating temperature by the hot plate 2 as in this case. Sometimes.

さらにウエハＷを熱板２に載置して加熱処理を行っている間に支持プレート４０を第３の温度、例えば２３℃の冷却状態に切り替えて降温しておくことが好ましい。このように構成することで熱板２にて加熱したウエハＷを支持プレート４０に受け渡した直後から速やかに冷却することができる。
また加熱処理後のウエハＷを搬送アーム４に受け渡して第２の温度より低い、第３の温度に冷却するが、この第３の温度とは、ウエハＷを搬送アーム４に載置し続けたときに最終的に到達する温度であり、この温度が第２の温度よりも低ければよい。従って加熱処理後のウエハＷを搬送アーム４に受け渡した後、ウエハＷの温度が第２の温度以下に下がりきらないうちに、ウエハＷを熱処理装置１の外部に受け渡す構成であっても本開示の範囲に含まれる。 Furthermore, while the wafer W is placed on the hot plate 2 and is being heat-treated, it is preferable to lower the temperature of the support plate 40 by switching it to a third temperature, for example, 23.degree. With this configuration, the wafer W heated by the hot plate 2 can be quickly cooled immediately after it is transferred to the support plate 40 .
After the heat treatment, the wafer W is transferred to the transfer arm 4 and cooled to a third temperature lower than the second temperature. It is the temperature that is sometimes finally reached, and it is sufficient if this temperature is lower than the second temperature. Therefore, even if the wafer W after the heat treatment is transferred to the transfer arm 4 and then transferred to the outside of the heat treatment apparatus 1 before the temperature of the wafer W is completely lowered to the second temperature or lower, the present invention can be used. Included within the scope of disclosure.

またウエハＷを熱処理装置１に搬送する前にウエハＷの温度の測定を行い、測定温度に基づいて、外部からウエハＷを受け取るとき支持プレート４０の温度を調整するようにしてもよい。例えば図１１に示すように外部の搬送機構Ａ５に保持されたウエハＷの温度を測定する温度測定部９６を当該搬送機構Ａ５に設け、当該温度測定部９６は測定温度に相当する測定信号を制御部９に出力するように構成される。そして制御部９にて、測定信号に基づきペルチェ素子部４１に入力する電流を調整すればよい。一例としては、検出されるウエハＷの測定温度が、ある基準より低くなった場合はより大きな温度変化量が必要なので支持プレートの初期温度を上げたり加熱時に徐々に温度を上げる手法がとられる。しかし、基板温度が所定温度を超えるオーバーシュートが起きないように、そうして上げられた支持プレートの温度を加熱後半に下げるといったことが考えられる。反対に、ウエハＷの測定温度が、ある基準より高くなった場合は、加熱前半の加熱レートを保つために、上記と同様に初期温度や加熱時温度変化を変えることが考えられるが、オーバーシュートのリスクとその加熱後半における対策も同様のことが言える。 Further, the temperature of the wafer W may be measured before the wafer W is transferred to the heat treatment apparatus 1, and the temperature of the support plate 40 may be adjusted based on the measured temperature when the wafer W is received from the outside. For example, as shown in FIG. 11, the transfer mechanism A5 is provided with a temperature measurement unit 96 for measuring the temperature of the wafer W held by the external transfer mechanism A5, and the temperature measurement unit 96 controls a measurement signal corresponding to the measured temperature. configured to output to unit 9; Then, the control section 9 may adjust the current to be input to the Peltier element section 41 based on the measurement signal. For example, when the measured temperature of the detected wafer W is lower than a certain reference, a larger temperature change amount is required, so the initial temperature of the support plate is increased or the temperature is gradually increased during heating. However, in order to prevent the substrate temperature from overshooting the predetermined temperature, it is conceivable to lower the temperature of the support plate thus raised in the latter half of the heating. On the contrary, when the measured temperature of the wafer W becomes higher than a certain reference, it is conceivable to change the initial temperature and the temperature change during heating in the same manner as described above in order to maintain the heating rate in the first half of the heating. The same can be said for the risk of heat and the countermeasures in the latter half of the heating.

さらにウエハＷを支持プレート４０に載置し、第２の温度に昇温するときに支持プレート４０上のウエハＷの周囲の空間を周辺から隔離するカバーを設けてもよい。このように構成することでウエハＷの周囲の空間を隔離断熱することができるためウエハＷの昇温を促進できる効果がある。このカバーは、ウエハＷを冷却するときには、上昇させておくようにしてもよい。カバーは、熱板２側のカバー２４と一体となって昇降するように構成してもよく、このとき支持プレート側のカバーと、カバー２４と、の連結部分に例えばセラミック板などの断熱材を挟んでもよい。 Further, a cover may be provided to isolate the space around the wafer W on the support plate 40 from the surroundings when the wafer W is placed on the support plate 40 and heated to the second temperature. With this configuration, the space around the wafer W can be isolated and insulated, so that the temperature rise of the wafer W can be accelerated. This cover may be raised when the wafer W is cooled. The cover may be constructed so as to move up and down integrally with the cover 24 on the hot plate 2 side. You can sandwich it.

続いて上述の熱処理装置１が組み込まれる塗布、現像装置の全体構成について簡単に述べておく。塗布、現像装置は図１２及び図１３に示すようにキャリアブロックＢ１と、処理ブロックＢ２と、インターフェイスブロックＢ３と、を直線状に接続して構成されている。インターフェイスブロックＢ３には、更に露光ステーションＢ４が接続されている。 Next, the overall construction of the coating and developing apparatus in which the heat treatment apparatus 1 described above is incorporated will be briefly described. As shown in FIGS. 12 and 13, the coating and developing apparatus is constructed by linearly connecting a carrier block B1, a processing block B2, and an interface block B3. An exposure station B4 is further connected to the interface block B3.

キャリアブロックＢ１は、製品用の基板である例えば直径３００ｍｍのウエハＷを複数枚収納する搬送容器であるキャリアＣ（例えばＦＯＵＰ）から装置内に搬入出する役割を有し、キャリアＣの載置ステージ１０１と、ドア１０２と、キャリアＣからウエハＷを搬送するための搬送アーム１０３と、を備えている。
処理ブロックＢ２はウエハＷに液処理を行うための第１～第６の単位ブロックＤ１～Ｄ６が下から順に積層されて構成され、各単位ブロックＤ１～Ｄ６は、後述の液処理ユニット１１０にて、ウエハＷに供給する処理液が異なることを除いて概ね同じ構成である。 The carrier block B1 has a role of carrying in and out of the apparatus from a carrier C (for example, FOUP), which is a transfer container for storing a plurality of wafers W having a diameter of, for example, 300 mm, which are substrates for products. 101, a door 102, and a transfer arm 103 for transferring the wafer W from the carrier C.
The processing block B2 is constructed by stacking first to sixth unit blocks D1 to D6 for performing liquid processing on the wafer W, and the unit blocks D1 to D6 are arranged in a liquid processing unit 110, which will be described later. , have substantially the same configuration except that the processing liquid supplied to the wafer W is different.

図１３に代表して単位ブロックＤ５の構成を示すと、単位ブロックＤ５には、キャリアブロックＢ１側からインターフェイスブロックＢ３へ向かう直線状の搬送領域Ｒ３を移動する搬送機構Ａ５と、カップモジュール１１１を備えた、例えばウエハＷに現像液を供給するための液処理ユニット１１０と、が設けられている。なお単位ブロックＤ１（Ｄ２）は液処理ユニット１１０においてウエハＷに反射防止膜となる処理液を塗布し、単位ブロックＤ３（Ｄ４）においては、液処理ユニット１１０においてウエハＷにレジスト液を塗布する。また棚ユニットＵ１～Ｕ６には既述の熱処理装置１が積層されている。搬送領域Ｒ５のキャリアブロックＢ１側には、互いに積層された複数のモジュールにより構成されている棚ユニットＵ７が設けられている。搬送アーム１０３と搬送機構Ａ５との間のウエハＷの受け渡しは、棚ユニットＵ７の受け渡しモジュールと搬送アーム１０４とを介して行なわれる。 FIG. 13 shows the configuration of the unit block D5 as a representative. The unit block D5 includes a transport mechanism A5 that moves in a linear transport region R3 from the carrier block B1 side to the interface block B3, and a cup module 111. Further, a liquid processing unit 110 for supplying developer to the wafer W, for example, is provided. In the unit block D1 (D2), the liquid processing unit 110 coats the wafer W with a processing liquid that will form an antireflection film. Further, the heat treatment apparatus 1 already described is stacked on the shelf units U1 to U6. A shelf unit U7 composed of a plurality of stacked modules is provided on the carrier block B1 side of the transport area R5. Wafer W is transferred between transfer arm 103 and transfer mechanism A5 via the transfer module of shelf unit U7 and transfer arm 104. FIG.

インターフェイスブロックＢ３は、処理ブロックＢ２と露光ステーションＢ４との間でウエハＷの受け渡しを行うためのものであり複数の処理モジュールが互いに積層された棚ユニットＵ８、Ｕ９、Ｕ１０を備えている。なお図中１０５、１０６は夫々棚ユニットＵ８、Ｕ９間、棚ユニットＵ９、Ｕ１０間でウエハＷの受け渡しをするための搬送アームであり、図中１０７は、棚ユニットＵ１０と露光ステーションＢ４との間でウエハＷの受け渡しをするための搬送アームである。 The interface block B3 is for transferring wafers W between the processing block B2 and the exposure station B4, and includes shelf units U8, U9 and U10 in which a plurality of processing modules are stacked. In the figure, reference numerals 105 and 106 denote transfer arms for transferring wafers W between the shelf units U8 and U9 and between the shelf units U9 and U10, respectively. is a transfer arm for transferring the wafer W at the .

塗布、現像装置及び露光ステーションＢ４からなるシステムのウエハＷの搬送経路の概略について簡単に説明する。ウエハＷは、キャリアＣ→搬送アーム１０３→棚ユニットＵ７の受け渡しモジュール→搬送アーム１０４→棚ユニットＵ７の受け渡しモジュール→単位ブロックＤ１（Ｄ２）→単位ブロックＤ３（Ｄ４）→インターフェイスブロックＢ３→露光ステーションＢ４の順に流れていく。これによりウエハＷの表面に反射防止膜及びレジスト膜が塗布され、さらにレジスト膜の表面に露光処理が行われる。さらに露光処理が行われたウエハＷは、インターフェイスブロックＢ３を介して、単位ブロックＤ５（Ｄ６）に搬送される。
さらに単位ブロックＤ５（Ｄ６）において熱処理装置１に搬送され既述の熱処理が行われ、次いで液処理ユニット１１０に搬送されて現像処理が行われる。その後ウエハＷは、棚ユニットＵ７の受け渡しモジュールＴＲＳ→搬送アーム１０３→キャリアＣの順で流れていく。
既述のように露光後のウエハＷは、ウエハＷを均一に熱処理することが求められる。そのため本実施の形態の熱処理装置１を露光後のウエハＷを加熱する熱処理装置１に適用することで大きな効果を得ることができる。 A brief description will be given of the transfer route of the wafer W in the system consisting of the coating and developing devices and the exposure station B4. Wafer W is transferred from carrier C→transfer arm 103→delivery module of shelf unit U7→transfer arm 104→delivery module of shelf unit U7→unit block D1 (D2)→unit block D3 (D4)→interface block B3→exposure station B4. flows in the order of As a result, the surface of the wafer W is coated with an antireflection film and a resist film, and the surface of the resist film is exposed. Further, the wafer W subjected to exposure processing is transferred to the unit block D5 (D6) via the interface block B3.
Further, in the unit block D5 (D6), it is transported to the heat treatment apparatus 1 and subjected to the heat treatment described above, and then transported to the liquid processing unit 110 to be developed. After that, the wafer W flows through the transfer module TRS of the shelf unit U7, the transfer arm 103, and the carrier C in this order.
As described above, the wafer W after exposure is required to be uniformly heat-treated. Therefore, by applying the heat treatment apparatus 1 of the present embodiment to the heat treatment apparatus 1 for heating the wafer W after exposure, a great effect can be obtained.

また本実施の形態に係る熱処理装置１は、ウエハＷの露光処理後に加熱する熱処理装置以外、例えばレジスト膜を塗布したウエハＷを露光ステーションＢ４に搬送する前に加熱する熱処理装置１に適用してもよい。つまり、ＰＡＢ（プリアプライドベーク）を行うために用いてもよい。ただし、上記のＰＥＢについては、温度の誤差に対するレジスト膜反応の変化量が大きく、ウエハＷの面内における高精度な温度制御が求められることから、熱処理装置１としてはＰＥＢに用いることが特に好ましい。 Further, the heat treatment apparatus 1 according to the present embodiment can be applied to a heat treatment apparatus 1 that heats a wafer W coated with a resist film before being transported to the exposure station B4, for example, other than the heat treatment apparatus that heats the wafer W after exposure processing. good too. That is, it may be used for PAB (pre-applied baking). However, with PEB, the amount of change in the resist film reaction with respect to the temperature error is large, and high-precision temperature control within the surface of the wafer W is required. .

なお、熱処理装置１としては化学増幅型レジスト膜の加熱以外の処理に適用してもよい。つまり、化学増幅型レジスト以外のレジスト膜が形成されたウエハＷの加熱処理に用いてもよいし、反射防止膜形成用の薬液や絶縁膜形成用の薬液が塗布されたウエハＷを加熱して、これら反射防止膜及び絶縁膜を形成する場合にも適用してもよい。また、熱処理装置１としては上記の構成に限られない。カバー２４が設けられず、熱板２の一端側、他端側にガス供給部、排気部を設け、熱板２の一端側から他端側に向かう気流を形成してウエハＷを加熱する構成であってもよい。 The heat treatment apparatus 1 may be applied to processes other than heating of chemically amplified resist films. In other words, it may be used for heating a wafer W on which a resist film other than a chemically amplified resist is formed, or by heating a wafer W coated with a chemical solution for forming an antireflection film or a chemical solution for forming an insulating film. , may also be applied to the case of forming these antireflection films and insulating films. Moreover, the heat treatment apparatus 1 is not limited to the configuration described above. A configuration in which the cover 24 is not provided, a gas supply section and an exhaust section are provided at one end side and the other end side of the hot plate 2, and an air flow is formed from one end side to the other end side of the hot plate 2 to heat the wafer W. may be

以上に検討したように、今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 As discussed above, the embodiments disclosed this time should be considered illustrative and not restrictive in all respects. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

１ 熱処理装置
２ 熱板
４ 搬送アーム
４０ 支持プレート
４１ ペルチェ素子部 1 Heat treatment device 2 Hot plate 4 Transfer arm 40 Support plate 41 Peltier element part

Claims (13)

載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記支持部は前記加熱機構と前記冷却機構とに共用され、
前記加熱機構及び前記冷却機構は、支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替え、
制御信号を出力する制御部が設けられ、
前記基板が前記支持部に支持されると同時か支持された後に、当該基板を前記第２の温度にするために前記冷却状態から前記加熱状態への切り替えが行われるように前記制御信号が出力される熱処理装置。 a hot plate for heating the placed substrate to a first temperature;
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The support portion is shared by the heating mechanism and the cooling mechanism,
The heating mechanism and the cooling mechanism have a heating state for heating the supporting portion so that the supported substrate reaches the second temperature, and a heating state for heating the supported substrate so that the supported substrate reaches the third temperature. switching between a cooling state that cools the support part;
A control unit that outputs a control signal is provided,
The control signal is output so that the cooling state is switched to the heating state to bring the substrate to the second temperature at the same time or after the substrate is supported by the support. heat treatment equipment. 載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記支持部は前記加熱機構と前記冷却機構とに共用され、
前記加熱機構及び前記冷却機構は、支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替え、
制御信号を出力する制御部が設けられ、
前記冷却状態から前記加熱状態へ切り替わるタイミングは、前記基板を支持する前記搬送体が前記上方領域に位置する予定のタイミングに応じたタイミングとなるように前記制御信号が出力される熱処理装置。 a hot plate for heating the placed substrate to a first temperature;
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The support portion is shared by the heating mechanism and the cooling mechanism,
The heating mechanism and the cooling mechanism have a heating state for heating the supporting portion so that the supported substrate reaches the second temperature, and a heating state for heating the supported substrate so that the supported substrate reaches the third temperature. switching between a cooling state that cools the support part;
A control unit that outputs a control signal is provided,
The heat treatment apparatus in which the control signal is output such that the timing of switching from the cooling state to the heating state corresponds to the timing at which the carrier supporting the substrate is expected to be positioned in the upper region . 載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記支持部は前記加熱機構と前記冷却機構とに共用され、
前記加熱機構及び前記冷却機構は、支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替え、
制御信号を出力する制御部が設けられ、
当該制御部は、前記支持部に載置される前の前記基板の温度についての情報を取得し、
前記基板が搬送されるときの前記支持部の温度が、当該基板の温度に対応する温度になるように制御信号を出力する熱処理装置。 a hot plate for heating the placed substrate to a first temperature;
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The support portion is shared by the heating mechanism and the cooling mechanism,
The heating mechanism and the cooling mechanism have a heating state for heating the supporting portion so that the supported substrate reaches the second temperature, and a heating state for heating the supported substrate so that the supported substrate reaches the third temperature. switching between a cooling state that cools the support part;
A control unit that outputs a control signal is provided,
The control unit acquires information about the temperature of the substrate before being placed on the support,
A heat treatment apparatus that outputs a control signal so that the temperature of the support portion when the substrate is transported becomes a temperature corresponding to the temperature of the substrate. 載置された基板を第１の温度に加熱する熱板と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する搬送体と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す受け渡し機構と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する加熱機構と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する冷却機構と、
を備え、
前記搬送体は、
前記各々前記支持部を備えた互いに別体の第１の搬送体と、第２の搬送体とを備え、
前記加熱機構、前記冷却機構により前記第１の搬送体の支持部の温度、前記第２の搬送体の温度が各々調整される熱処理装置。 a hot plate for heating the placed substrate to a first temperature;
a transport body comprising a support for supporting the substrate and transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region;
a transfer mechanism that transfers the substrate between the carrier and the hot plate in the upper region;
a heating mechanism for heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
a cooling mechanism for cooling the substrate, which has been heated by the hot plate and is supported by the support portion for transport to the outer region, to a third temperature lower than the second temperature;
with
The carrier is
comprising a first transport body and a second transport body separate from each other, each having the support part;
A heat treatment apparatus in which the temperature of the supporting portion of the first transfer body and the temperature of the second transfer body are adjusted by the heating mechanism and the cooling mechanism, respectively . 制御信号を出力する制御部が設けられ、
前記基板が前記支持部に支持されると同時か支持された後に、当該基板を前記第２の温度にするために前記冷却状態から前記加熱状態への切り替えが行われるように前記制御信号が出力される請求項２ないし４のいずれか一つに記載の熱処理装置。 A control unit that outputs a control signal is provided,
The control signal is output so that the cooling state is switched to the heating state to bring the substrate to the second temperature at the same time or after the substrate is supported by the support. The heat treatment apparatus according to any one of claims 2 to 4 . 制御信号を出力する制御部が設けられ、
前記冷却状態から前記加熱状態へ切り替わるタイミングは、前記基板を支持する前記搬送体が前記上方領域に位置する予定のタイミングに応じたタイミングとなるように前記制御信号が出力される請求項１、３または４記載の熱処理装置。 A control unit that outputs a control signal is provided,
3. The control signal is output so that the timing of switching from the cooling state to the heating state corresponds to timing at which the carrier supporting the substrate is expected to be positioned in the upper region. 5. The heat treatment apparatus according to 4 above. 制御信号を出力する制御部が設けられ、
前記制御部は、前記支持部に載置される前の前記基板の温度についての情報を取得し、
前記基板が搬送されるときの前記支持部の温度が、当該基板の温度に対応する温度になるように制御信号を出力する請求項１、２または４記載の熱処理装置。 A control unit that outputs a control signal is provided,
The control unit obtains information about the temperature of the substrate before it is placed on the support,
5. The heat treatment apparatus according to claim 1 , wherein a control signal is output so that the temperature of said support portion when said substrate is transported becomes a temperature corresponding to the temperature of said substrate. 制御信号を出力する制御部が設けられ、
前記基板が前記熱板に載置されている間、前記支持部が前記冷却状態とされて降温されるように制御信号を出力する請求項１ないし７のいずれか一つに記載の熱処理装置。 A control unit that outputs a control signal is provided,
8. The heat treatment apparatus according to any one of claims 1 to 7, wherein a control signal is output so that the support portion is brought into the cooling state and the temperature is lowered while the substrate is placed on the hot plate. 前記搬送体は、
前記各々前記支持部を備えた互いに別体の第１の搬送体と、第２の搬送体とを備え、
前記加熱機構、前記冷却機構により前記第１の搬送体の支持部の温度、前記第２の搬送体の温度が各々調整される請求項１ないし３のいずれか一つに記載の熱処理装置。 The carrier is
comprising a first transport body and a second transport body separate from each other, each having the support part;
4. The heat treatment apparatus according to any one of claims 1 to 3 , wherein the heating mechanism and the cooling mechanism adjust the temperature of the supporting portion of the first transfer body and the temperature of the second transfer body, respectively. 前記第２の温度は２０℃～７０℃である請求項１ないし９のいずれか一つに記載の熱処理装置。 The heat treatment apparatus according to any one of claims 1 to 9, wherein the second temperature is 20°C to 70°C. 熱板に載置された基板を第１の温度に加熱する工程と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する工程と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す工程と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する工程と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する工程と、
支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替える工程と、
前記基板が前記支持部に支持されると同時か支持された後に、当該基板を前記第２の温度にするために前記冷却状態から前記加熱状態への切り替えを行う工程と、
を含む熱処理方法。 heating the substrate placed on the hot plate to a first temperature;
a step of transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region, the substrate being provided with a support for supporting the substrate;
transferring the substrate between the carrier and the hot plate in the upper region;
a step of heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
cooling the substrate, which has been heated by the hot plate and is supported by the support for transport to the outer region, to a third temperature lower than the second temperature;
A heating state in which the supporting portion is heated so that the supported substrate reaches the second temperature, and a cooling state in which the supporting portion is cooled so that the supported substrate reaches the third temperature. switching to each other;
simultaneously with or after the substrate is supported by the support, switching from the cooling state to the heating state to bring the substrate to the second temperature;
A heat treatment method comprising: 熱板に載置された基板を第１の温度に加熱する工程と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する工程と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す工程と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する工程と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する工程と、
支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替える工程と、を含み、
前記冷却状態から前記加熱状態へ切り替わるタイミングは、前記基板を支持する前記搬送体が前記上方領域に位置する予定のタイミングに応じたタイミングである熱処理方法。 heating the substrate placed on the hot plate to a first temperature;
a step of transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region, the substrate being provided with a support for supporting the substrate;
transferring the substrate between the carrier and the hot plate in the upper region;
a step of heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
cooling the substrate, which has been heated by the hot plate and is supported by the support for transport to the outer region, to a third temperature lower than the second temperature;
A heating state in which the supporting portion is heated so that the supported substrate reaches the second temperature, and a cooling state in which the supporting portion is cooled so that the supported substrate reaches the third temperature. and switching between each other;
The heat treatment method, wherein the timing of switching from the cooling state to the heating state corresponds to timing at which the transfer body supporting the substrate is expected to be positioned in the upper region. 熱板に載置された基板を第１の温度に加熱する工程と、
前記基板を支持する支持部を備え、前記熱板の上方領域と当該上方領域から横方向に外れた外側領域との間で当該基板を搬送する工程と、
前記上方領域における前記搬送体と前記熱板との間で前記基板を受け渡す工程と、
前記外側領域において前記支持部に支持された前記熱板による加熱前の基板を、前記第１の温度よりも低い第２の温度に加熱する工程と、
前記熱板で加熱済みで前記外側領域へ搬送するために前記支持部に支持された前記基板が前記第２の温度よりも低い第３の温度になるように冷却する工程と、
支持された前記基板が前記第２の温度になるように前記支持部を加熱する加熱状態と、支持された前記基板が前記第３の温度になるように前記支持部を冷却する冷却状態とを互いに切り替える工程と、
前記支持部に載置される前の前記基板の温度についての情報を取得する工程と、
前記基板が搬送されるときの前記支持部の温度を、前記基板の温度に対応する温度とする工程と、
を含む熱処理方法。 heating the substrate placed on the hot plate to a first temperature;
a step of transporting the substrate between an upper region of the hot plate and an outer region laterally deviating from the upper region, the substrate being provided with a support for supporting the substrate;
transferring the substrate between the carrier and the hot plate in the upper region;
a step of heating the substrate before being heated by the hot plate supported by the supporting portion in the outer region to a second temperature lower than the first temperature;
cooling the substrate, which has been heated by the hot plate and is supported by the support for transport to the outer region, to a third temperature lower than the second temperature;
A heating state in which the supporting portion is heated so that the supported substrate reaches the second temperature, and a cooling state in which the supporting portion is cooled so that the supported substrate reaches the third temperature. switching to each other;
obtaining information about the temperature of the substrate before it is placed on the support;
setting the temperature of the supporting portion when the substrate is transported to a temperature corresponding to the temperature of the substrate;
A heat treatment method comprising:
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