CN109273564A - Deep ultraviolet LED vertical chip device and preparation method based on n-type doping gallium oxide - Google Patents
Deep ultraviolet LED vertical chip device and preparation method based on n-type doping gallium oxide Download PDFInfo
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- CN109273564A CN109273564A CN201811194479.1A CN201811194479A CN109273564A CN 109273564 A CN109273564 A CN 109273564A CN 201811194479 A CN201811194479 A CN 201811194479A CN 109273564 A CN109273564 A CN 109273564A
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- gallium nitride
- nitride alloy
- gallium oxide
- aluminium
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 130
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 170
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 158
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 146
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 146
- 239000004411 aluminium Substances 0.000 claims abstract description 146
- 239000000956 alloy Substances 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 82
- 230000004888 barrier function Effects 0.000 claims abstract description 64
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 63
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 31
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 229910017083 AlN Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011162 core material Substances 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 239000004904 UV filter Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The present invention discloses a kind of deep ultraviolet LED vertical chip device and preparation method based on n-type doping gallium oxide, belong to semi-conductor LED chips manufacturing technology field, including p-type film layer, electronic barrier layer, multi-quantum pit structure layer, aluminium gallium nitride alloy material layer, aluminium gallium nitride alloy buffer layer and gallium oxide substrate.Electronic barrier layer is provided with first side and second side；Multi-quantum pit structure layer is provided with third side and the 4th side, and multi-quantum pit structure layer is arranged on the second side by third side；Aluminium gallium nitride alloy material layer is provided with the 5th side and the 6th side, and aluminium gallium nitride alloy material layer is arranged on the 4th side by the 5th side；Aluminium gallium nitride alloy buffer layer is provided with heptalateral face and the 8th side, and aluminium gallium nitride alloy buffer layer is arranged on the 6th side by heptalateral face；Gallium oxide substrate is arranged on the 8th side by the 9th side.The present invention reaches without removing to the substrate material of LED epitaxial wafer, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
Description
Technical field
The invention belongs to semi-conductor LED chips manufacturing technology field, in particular to a kind of depth based on n-type doping gallium oxide
Ultraviolet LED vertical chip device and preparation method.
Background technique
UV LED chip refers generally to centre of luminescence wavelength in 400nm LED below, when being greater than 320nm for emission wavelength
Be properly termed as near ultraviolet LED, and shorter than 320nm is deep ultraviolet LED.Deep ultraviolet LED can effective sterilizing, therefore it is wide
It is general to apply in application fields such as air cleaning, Water warfare, surface disinfections, such as apply net in refrigerator, air-conditioning, humidifier, air
Change device etc. is lived with mankind's high-quality in closely bound up equipment.
Currently, mainly being used in the epitaxy technology of deep ultraviolet LED for the prior art of deep ultraviolet LED chip
Nonconducting c surface sapphire is as substrate, during carrying out the preparation of vertical structure deep ultraviolet LED vertical chip, need from
The interface AlN/n-AlGaN is directly removed by AlN/Sapphire template.But since the growth temperature of n-AlGaN is much higher than
GaN material of the blue-ray LED as N-shaped conductive layer.Make also to be difficult to by laser lift-off technique at the interface AlN/n-AlGaN in this way
Place forms the temperature for being enough to allow AlGaN material to decompose vaporization, then leads to not the removing for completing AlN/Sapphire template, from
And the deep ultraviolet LED chip of vertical structure can not be prepared.
In conclusion there is can not be to the lining of LED epitaxial wafer in the technology of existing deep ultraviolet LED vertical chip
Bottom material is removed, it is difficult to prepare deep ultraviolet LED vertical chip.
Summary of the invention
The technical problem to be solved by the present invention is in the technology of existing deep ultraviolet LED chip, there is can not be right
The substrate material of LED epitaxial wafer is removed, it is difficult to the problem of preparing deep ultraviolet LED vertical chip.
In order to solve the above technical problems, the present invention provides a kind of vertical core of deep ultraviolet LED based on n-type doping gallium oxide
Sheet devices, the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide includes p-type film layer；Electronic barrier layer,
The electronic barrier layer is provided with first side and second side, and the electronic barrier layer is arranged by the first side in institute
It states in p-type film layer, and the first side is between the second side and the p-type film layer；Multi-quantum pit structure
Layer, the multi-quantum pit structure layer are provided with third side and the 4th side, and the multi-quantum pit structure layer passes through the third
Side is arranged in the second side, and the third side is between the 4th side and the second side；Nitrogen
Change gallium aluminium material layer, the aluminium gallium nitride alloy material layer is provided with the 5th side and the 6th side, and the aluminium gallium nitride alloy material layer is logical
It crosses the 5th side to be arranged on the 4th side, and the 5th side is located at the 6th side and the 4th side
Between face；Aluminium gallium nitride alloy buffer layer, the aluminium gallium nitride alloy buffer layer are provided with heptalateral face and the 8th side, the aluminium gallium nitride alloy
Buffer layer is arranged on the 6th side by heptalateral face, and heptalateral face is located at the 8th side and institute
It states between the 6th side；Gallium oxide substrate, the gallium oxide substrate are provided with the 9th side and the tenth side, the gallium oxide lining
Bottom is arranged on the 8th side by the 9th side, and the 9th side is located at the tenth side and described the
Between eight sides.
Further, the making material of the p-type film layer is p-type gallium nitride material；The thickness of the electronic barrier layer
Range is from 1nm to 100nm.
Further, the emission wavelength of the multi-quantum pit structure layer is not less than 260nm.
Further, the making material of the aluminium gallium nitride alloy material layer is N-shaped aluminium gallium nitride alloy material.
Further, the making material of the aluminium gallium nitride alloy buffer layer is N-shaped aluminium gallium nitride alloy material；The gallium oxide substrate
Making material be N-shaped gallium oxide material；The thickness range of the gallium oxide substrate is from 100 μm to 700 μm.
Further, the making material of the p-type film layer is p-type aluminium gallium nitride alloy material；The thickness of the electronic barrier layer
Range is spent from 1nm to 100nm.
Further, the emission wavelength of the multi-quantum pit structure layer is not less than 260nm.
Further, the making material of the aluminium gallium nitride alloy material layer is N-shaped aluminium gallium nitride alloy material.
Further, the making material of the aluminium gallium nitride alloy buffer layer is N-shaped aluminium gallium nitride alloy material；The gallium oxide substrate
Making material be N-shaped gallium oxide material；The thickness range of the gallium oxide substrate is from 100 μm to 700 μm.
Another aspect according to the present invention, the present invention also provides a kind of deep ultraviolet LED based on n-type doping gallium oxide to hang down
The preparation method of straight chip, the preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide include obtaining oxygen
Change gallium substrate, aluminium gallium nitride alloy buffer layer is made on the gallium oxide substrate；Nitridation is made on the aluminium gallium nitride alloy buffer layer
Gallium aluminium material layer；Multi-quantum pit structure layer is made in the aluminium gallium nitride alloy material layer；It is made on the multi-quantum pit structure layer
Make electronic barrier layer；P-type film layer is made, on the electronic barrier layer to prepare the depth based on n-type doping gallium oxide
Ultraviolet LED vertical chip.
The utility model has the advantages that
The present invention provides a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide, passes through electronic barrier layer
First side be arranged in p-type film layer so that electronic barrier layer and p-type film layer are bonded to each other；Multi-quantum pit structure layer
Third side be arranged in the second side of electronic barrier layer so that multi-quantum pit structure layer and electronic barrier layer mutually paste
It closes；5th side of aluminium gallium nitride alloy material layer is arranged on the 4th side of multi-quantum pit structure layer, so that aluminium gallium nitride alloy material
Layer and multi-quantum pit structure layer are bonded to each other；The heptalateral face of aluminium gallium nitride alloy buffer layer is arranged in the 6th of aluminium gallium nitride alloy material layer
On side, so that aluminium gallium nitride alloy buffer layer and aluminium gallium nitride alloy material layer are bonded to each other；The 9th side setting of gallium oxide substrate exists
On 8th side of aluminium gallium nitride alloy buffer layer, so that gallium oxide substrate and aluminium gallium nitride alloy buffer layer are bonded to each other.Make in this way
P-type film layer, electronic barrier layer, Multiple-quantum are disposed in the deep ultraviolet LED vertical chip of gallium oxide based on n-type doping
Well structure layer, aluminium gallium nitride alloy material layer, aluminium gallium nitride alloy buffer layer and gallium oxide substrate then use conductive gallium oxide and serve as a contrast
Substrate of the bottom as deep ultraviolet LED epitaxial material, when so that preparing the deep ultraviolet LED vertical chip of the gallium oxide of vertical structure,
It is removed without the substrate material to LED epitaxial wafer.Then the substrate material needed in the prior art to LED epitaxial wafer is overcome
Expect the technological deficiency removed.It is removed to reach without the substrate material to LED epitaxial wafer, it is dark purple convenient for preparing
The technical effect of outer LED vertical chip.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention
Overall structure diagram；
Fig. 2 is a kind of preparation of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide provided in an embodiment of the present invention
The flow chart of method；
Fig. 3 is that a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention hangs down
The formal dress schematic diagram of straight structure；
Fig. 4 is that a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention hangs down
The upside-down mounting schematic diagram of straight structure.
Specific embodiment
The invention discloses a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide, passes through electronic blocking
The first side 210 of layer 200 is arranged in p-type film layer 100, so that electronic barrier layer 200 and p-type film layer 100 are mutually pasted
It closes；The third side 310 of multi-quantum pit structure layer 300 is arranged in the second side 220 of electronic barrier layer 200, so that volume
Sub- well structure layer 300 and electronic barrier layer 200 are bonded to each other；5th side 410 of aluminium gallium nitride alloy material layer 400 is arranged in volume
On 4th side 320 of sub- well structure layer 300, so that aluminium gallium nitride alloy material layer 400 and multi-quantum pit structure layer 300 mutually paste
It closes；The heptalateral face 510 of aluminium gallium nitride alloy buffer layer 500 is arranged on the 6th side 420 of aluminium gallium nitride alloy material layer 400, so that
Aluminium gallium nitride alloy buffer layer 500 and aluminium gallium nitride alloy material layer 400 are bonded to each other；The 9th side 610 setting of gallium oxide substrate 600 exists
On 8th side 520 of aluminium gallium nitride alloy buffer layer 500, so that gallium oxide substrate 600 and aluminium gallium nitride alloy buffer layer 500 mutually paste
It closes.Make to be disposed in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping in this way p-type film layer 100,
Electronic barrier layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide lining
Bottom 600 then uses substrate of the conductive gallium oxide substrate 600 as deep ultraviolet LED epitaxial material, so that preparation is vertical
When the deep ultraviolet LED vertical chip of the gallium oxide of structure, removed without the substrate material to LED epitaxial wafer.Then overcome
The technological deficiency that needs to remove the substrate material of LED epitaxial wafer in the prior art.It is not necessarily to outside to LED to reach
The substrate material for prolonging piece is removed, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art's every other embodiment obtained belong to what the present invention protected
Range；Wherein "and/or" keyword involved in this implementation, indicate and or two kinds of situations, in other words, the present invention implement
A and/or B mentioned by example, illustrate two kinds of A and B, A or B situations, describe three kinds of states present in A and B, such as A and/or
B, indicate: only including A does not include B；Only including B does not include A；Including A and B.
Meanwhile in the embodiment of the present invention, when component is referred to as " being fixed on " another component, it can be directly at another
On component or there may also be components placed in the middle.When a component is considered as " connection " another component, it be can be directly
It is connected to another component or may be simultaneously present component placed in the middle.When a component is considered as " being set to " another group
Part, it, which can be, is set up directly on another component or may be simultaneously present component placed in the middle.Made in the embodiment of the present invention
Term "vertical", "horizontal", "left" and "right" and similar statement are merely for purposes of illustration, and are not intended to
The limitation present invention.
Embodiment one
Referring to Figure 1, Fig. 1 is that a kind of deep ultraviolet LED based on n-type doping gallium oxide provided in an embodiment of the present invention is vertical
The overall structure diagram of chip apparatus.A kind of deep ultraviolet LED based on n-type doping gallium oxide provided in an embodiment of the present invention hangs down
Straight chip apparatus, the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide includes p-type film layer 100, electronics
Barrier layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide substrate
600。
For p-type film layer 100:
The making material of p-type film layer 100 can be p-type gallium nitride material；Or the production of the p-type film layer 100
Material can be p-type aluminium gallium nitride alloy material.
Referring to Figure 1, p-type gallium nitride material can refer to p-GaN, i.e. GaN material p-type doping, GaN (gallium nitride) room temperature
Wurtzite structure under normal pressure, GaN is the core material of light emitting diode in contemporary semiconductor illumination, industrially frequently with
MOCVD and HVPE equipment carrys out epitaxial growth.P-type aluminium gallium nitride alloy material can refer to p-AlGaN, i.e. AlGaN material p-type doping,
AlGaN (aluminium gallium nitride alloy) is suitable for preparing the photoelectric device of visible light to UV wavelength range.It is to adopt for p-type film layer 100
The extension scheme of LED is then depended on p-GaN or p-AlGaN.For selecting p-GaN or p-AlGaN, then will affect last
It is inverted structure or positive assembling structure used by LED chip.If the making material of p-type film layer 100 selects p-GaN, p-type
The one side of film layer 100 can be bonded to each other with the first side 210 of following electronic barrier layers 200, p-type film layer 100
Another side can be bonded to each other with conductive silicon substrate 700.If p-type film layer 100 grows p-AlGaN, Al in p-AlGaN
Component needs to be higher than the average Al component of Quantum Well MQWs in following multi-quantum pit structure layers 300.
For electronic barrier layer 200:
Electronic barrier layer 200 is provided with first side 210 and second side 220, and the electronic barrier layer 200 passes through described
First side 210 is arranged in the p-type film layer 100, and the first side 210 is located at the second side 220 and institute
It states between p-type film layer 100.Wherein, the thickness range of the electronic barrier layer 200 is from 1nm to 100nm.
Continuing with referring to Fig. 1, first side 210 and second side 220 can be upper and lower two in electronic barrier layer 200
A side.The first side 210 of electronic barrier layer 200 can be bonded to each other with aforementioned p-type film layer 100, electronic barrier layer 200
Second side 220 can be bonded to each other with the third side 310 of following multi-quantum pit structure layers 300 so that electronic barrier layer
200 between aforementioned p-type film layer 100 and following multi-quantum pit structure layers 300.Electronic barrier layer 200 can refer to EBL.
EBL is the p-type AlGaN material that Al component is higher than Quantum Well MQWs potential barrier in following multi-quantum pit structure layers 300, the thickness of EBL
Range is in 1nm to 100nm.Assuming that the thickness of electronic barrier layer 200 is A1, then 100nm >=A1≥1nm.Work as electronic barrier layer
When 200 thickness is greater than 100, then the electric property of LED chip can be seriously affected.
For multi-quantum pit structure layer 300:
The multi-quantum pit structure layer 300 is provided with third side 310 and the 4th side 320, the multi-quantum pit structure
Layer 300 is arranged in the second side 220 by the third side 310, and the third side 310 is located at the described 4th
Between side 320 and the second side 220.Wherein, the emission wavelength of the multi-quantum pit structure layer 300 is not less than 260nm.
It can be the upper and lower of multi-quantum pit structure layer 300 continuing with referring to Fig. 1, third side 310 and the 4th side 320
Two sides.It the third side 310 of multi-quantum pit structure layer 300 can be with 220 phase of second side of above-mentioned electronic barrier layer 200
Mutually fitting, the 4th side 320 of multi-quantum pit structure layer 300 can be with the 5th side 410 of following aluminium gallium nitride alloy material layers 400
Be bonded to each other so that multi-quantum pit structure layer 300 be located at above-mentioned electronic barrier layer 200 and following aluminium gallium nitride alloy material layers 400 it
Between.The emission wavelength of the Quantum Well MQWs of the epitaxial growth in LEDF chip can be not less than 260nm.Assuming that more in LEDF chip
The emission wavelength of quantum well structure layer 300 is A2, then A2≥260nm.When the hair of the multi-quantum pit structure layer 300 in LEDF chip
(A when optical wavelength is lower than 2602< 260nm), so that issued light is oxidized gallium absorption, this is unfavorable for the low meeting of luminous wavelength
LEDF chip goes out light, so that luminous wavelength is meaningless lower than 260.
For aluminium gallium nitride alloy material layer 400:
Aluminium gallium nitride alloy material layer 400 is provided with the 5th side 410 and the 6th side 420, the aluminium gallium nitride alloy material layer 400
It is arranged on the 4th side 320 by the 5th side 410, and the 5th side 410 is located at the 6th side
Between 420 and the 4th side 320.Wherein, the making material of the aluminium gallium nitride alloy material layer 400 is N-shaped aluminium gallium nitride alloy material
Material.
Continuing with referring to Fig. 1, the 5th side 410 and the 6th side 420 can be the upper and lower of aluminium gallium nitride alloy material layer 400
Two sides.It 5th side 410 of aluminium gallium nitride alloy material layer 400 can be with the 4th side of above-mentioned multi-quantum pit structure layer 300
320 are bonded to each other, and the 6th side 420 of aluminium gallium nitride alloy material layer 400 can be with the heptalateral of following aluminium gallium nitride alloy buffer layers 500
Face 510 is bonded to each other, so that aluminium gallium nitride alloy material layer 400 is located at above-mentioned multi-quantum pit structure layer 300 and following aluminium gallium nitride alloys are slow
It rushes between layer 500.The making material of aluminium gallium nitride alloy material layer 400 can be N-shaped aluminium gallium nitride alloy material, N-shaped aluminium gallium nitride alloy material
It can refer to n-AlGaN material, i.e. AlGaN material n-type doping, AlGaN (aluminium gallium nitride alloy) is suitable for preparing visible light to ultraviolet
The photoelectric device of wave-length coverage.The thickness range of Al component in n-AlGaN not higher than 0.66, n-AlGaN be 200nm extremely
5000nm.Assuming that the thickness of aluminium gallium nitride alloy material layer 400 is A3, then 5000nm >=A3≥200nm.When aluminium gallium nitride alloy material layer 400
In Al component be higher than 0.66 when, then it is meaningless for shining for LED chip.
For aluminium gallium nitride alloy buffer layer 500:
Aluminium gallium nitride alloy buffer layer 500 is provided with heptalateral face 510 and the 8th side 520, the aluminium gallium nitride alloy buffer layer 500
It is arranged on the 6th side 420 by heptalateral face 510, and heptalateral face 510 is located at the 8th side
Between 520 and the 6th side 420.Wherein, the making material of the aluminium gallium nitride alloy buffer layer 500 is N-shaped aluminium gallium nitride alloy material
Material.
It can be the upper and lower of aluminium gallium nitride alloy buffer layer 500 continuing with referring to Fig. 1, heptalateral face 510 and the 8th side 520
Two sides.It the heptalateral face 510 of aluminium gallium nitride alloy buffer layer 500 can be with the 6th side of above-mentioned aluminium gallium nitride alloy material layer 400
420 are bonded to each other, and the 8th side 520 of aluminium gallium nitride alloy buffer layer 500 can be with the 9th side of following gallium oxide substrates 600
610 are bonded to each other, so that aluminium gallium nitride alloy buffer layer 500 is located at above-mentioned aluminium gallium nitride alloy material layer 400 and following gallium oxide substrates 600
Between.The making material of aluminium gallium nitride alloy buffer layer 500 can be N-shaped aluminium gallium nitride alloy material, and N-shaped aluminium gallium nitride alloy material can refer to
N-AlGaN, N-shaped aluminium gallium nitride alloy material refer to aluminium gallium nitride alloy material n-type doping.Aluminium gallium nitride alloy buffer layer 500 (i.e. n-AlGaN)
Buffer layer can be low temperature AI GaN buffer (i.e. the aluminium gallium nitride alloy buffer layer 500 of low temperature) or superlattice structure, n-type doping.
AlGaN (aluminium gallium nitride alloy) is suitable for preparing the photoelectric device of visible light to UV wavelength range.
For gallium oxide substrate 600:
Gallium oxide substrate 600 is provided with the 9th side 610 and the tenth side 620, and the gallium oxide substrate 600 passes through described
9th side 610 is arranged on the 8th side 520, and the 9th side 610 is located at the tenth side 620 and described
Between 8th side 520.Wherein, the making material of the gallium oxide substrate 600 is N-shaped gallium oxide material；The gallium oxide lining
The thickness range at bottom 600 is from 100 μm to 700 μm.
Continuing with referring to Fig. 1, the 9th side 610 and the tenth side 620 can be upper and lower two of gallium oxide substrate 600
Side.It 9th side 610 of gallium oxide substrate 600 can be with the 8th side 520 mutually patch of above-mentioned aluminium gallium nitride alloy buffer layer 500
It closes, so that above-mentioned aluminium gallium nitride alloy buffer layer 500 is located between gallium oxide substrate 600 and above-mentioned aluminium gallium nitride alloy material layer 400.Oxidation
The making material of gallium substrate 600 can be N-shaped gallium oxide material, and N-shaped gallium oxide material can refer to n-Ga2O3, N-shaped gallium oxide
It is gallium oxide material n-type doping.The alias of gallium oxide is gallic oxide, gallium oxide (Ga2O3) it is that a kind of broad stopband is partly led
Body, Eg=4.9eV, the electric conductivity and the characteristics of luminescence of gallium oxide are excellent.Gallium oxide is a kind of transparent oxide semiconductor material
Material, has broad application prospects, such as gallium oxide is used as in Ga base semiconductor material in terms of opto-electronic device
Insulating layer and UV filter；Gallium oxide is also used as O2Chemical probe etc..
It should be noted that the thickness range of gallium oxide substrate 600 can be 100 μm to 700 μm, it is assumed that gallium oxide substrate
600 thickness is A4, then 700 μm >=A4≥100μm.When the thickness of gallium oxide substrate 600 is less than 100 μm, i.e. A4100 μm of <,
Then in actual process conditions, gallium oxide substrate 600 of the thickness less than 100 μm can not be prepared；When gallium oxide substrate 600
When thickness is greater than 700 μm, i.e. A4700 μm of <, then gallium oxide substrate 600 of the thickness greater than 700 μm will lead to produced by LED chip
Heat increase, be unfavorable for the normal work of LED chip.
Fig. 3 and Fig. 4 are referred to, Fig. 3 is a kind of deep ultraviolet based on n-type doping gallium oxide provided in an embodiment of the present invention
The formal dress schematic diagram of LED vertical chip device vertical structure；Fig. 4 is provided in an embodiment of the present invention a kind of based on n-type doping oxygen
Change the upside-down mounting schematic diagram of the deep ultraviolet LED vertical chip device of gallium.It in actual operation, can be in n-Ga2O3First extension on substrate
N-AlGaN buffer layer.The n-AlGaN buffer layer of the extension can be the n-AlGaN buffer or superlattice structure of low temperature.
Then the successively exemplary epitaxial layer of extension deep ultraviolet LED: n-AlGaN material, MQWs, EBL, p-GaN/p-AlGaN.For p-type
Layer uses p-GaN or p-AlGaN, then depends on extension scheme.The difference of this p-type layer extension scheme will will affect last core
It is inverted structure or positive assembling structure that piece, which uses,.For the something in common of inverted structure and positive both epitaxial structures of assembling structure,
It is to use N-shaped in a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide provided in an embodiment of the present invention
The n-Ga of doping2O3Substrate.In the n-Ga of this n-type doping2O3On the basis of substrate, it is dark purple n-AlGaN, MQWs etc. can be carried out
The epitaxial growth of outer LED structure.After completing epitaxial growth, due to n-Ga2O3Substrate inherently conduction, so being not necessarily at this time
Substrate is removed.Carry by conventional chip technology can be realized vertical structure upside-down mounting or formal dress deep ultraviolet LED it is vertical
Straight chip.
The present invention provides a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide, passes through electronic barrier layer
200 first side 210 is arranged in p-type film layer 100, so that electronic barrier layer 200 and p-type film layer 100 are bonded to each other；
The third side 310 of multi-quantum pit structure layer 300 is arranged in the second side 220 of electronic barrier layer 200, so that multiple quantum wells
Structure sheaf 300 and electronic barrier layer 200 are bonded to each other；5th side 410 of aluminium gallium nitride alloy material layer 400 is arranged in multiple quantum wells
On 4th side 320 of structure sheaf 300, so that aluminium gallium nitride alloy material layer 400 and multi-quantum pit structure layer 300 are bonded to each other；Nitrogen
The heptalateral face 510 for changing gallium aluminium buffer layer 500 is arranged on the 6th side 420 of aluminium gallium nitride alloy material layer 400, so that aluminium nitride
Gallium buffer layer 500 and aluminium gallium nitride alloy material layer 400 are bonded to each other；9th side 610 of gallium oxide substrate 600 is arranged in aluminium nitride
On 8th side 520 of gallium buffer layer 500, so that gallium oxide substrate 600 and aluminium gallium nitride alloy buffer layer 500 are bonded to each other.In this way
So that being disposed with p-type film layer 100, electronic blocking in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping
Layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide substrate 600, after
And substrate of the conductive gallium oxide substrate 600 as deep ultraviolet LED epitaxial material is used, so that preparing the oxygen of vertical structure
When changing the deep ultraviolet LED vertical chip of gallium, removed without the substrate material to LED epitaxial wafer.Then existing skill is overcome
The technological deficiency removed to the substrate material of LED epitaxial wafer is needed in art.To reach without the lining to LED epitaxial wafer
Bottom material is removed, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
Based on the same inventive concept, this application provides with a kind of deep ultraviolet based on gallium oxide corresponding to embodiment one
The production method of LED vertical chip, detailed in Example two.
Embodiment two
Shown in Figure 2, Fig. 2 is a kind of deep ultraviolet LED based on n-type doping gallium oxide provided in an embodiment of the present invention
The flow chart of the preparation method of vertical chip.Second embodiment of the present invention provides a kind of deep ultraviolets based on n-type doping gallium oxide
The preparation method of the preparation method of LED vertical chip, the deep ultraviolet LED vertical chip based on n-type doping gallium oxide includes:
Step S100 obtains gallium oxide substrate 600, and aluminium gallium nitride alloy buffer layer is made on the gallium oxide substrate 600
500；
Fig. 2 is referred to, n-Ga can be used2O3Substrate, n-Ga2O3Substrate size then according to reaction chamber and
It is fixed, it can be 2 inches/4 inches/8 inches/12 inches/16 inches etc..It is with a thickness of between 200 μm~500 μm.n-Ga2O3Lining
Bottom is oriented to β.It can be in above-mentioned n-Ga2O3Substrate on epitaxial growth n-AlGaN buffer layer.N-AlGaN buffer layer can be
Low temperature AI GaN buffer or superlattice structure, n-type doping.Then vertical in the deep ultraviolet LED of the gallium oxide based on n-type doping
Gallium oxide substrate 600 and aluminium gallium nitride alloy buffer layer 500 are set gradually in chip.
Step S200 makes aluminium gallium nitride alloy material layer 400 on the aluminium gallium nitride alloy buffer layer 500；
Continuing with referring to fig. 2, epitaxial growth n-AlGaN material, n- on aluminium gallium nitride alloy buffer layer 500 can be made above-mentioned
The Al component of AlGaN material is not higher than 0.66, and the thickness of aluminium gallium nitride alloy material layer 400 is between 200~5000nm.Then exist
Gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer are set gradually in the deep ultraviolet LED vertical chip of gallium oxide based on n-type doping
500 and aluminium gallium nitride alloy material layer 400.
Step S300 makes multi-quantum pit structure layer 300 in the aluminium gallium nitride alloy material layer 400；
Continuing with referring to fig. 2, can in above-mentioned aluminium gallium nitride alloy material layer 400 epitaxial growth Quantum Well MQWs, Quantum Well
The emission wavelength of MQWs is not less than 260nm.Then in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping successively
Gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500, aluminium gallium nitride alloy material layer 400 and multi-quantum pit structure layer 300 are set.
Step S400 makes electronic barrier layer 200 on the multi-quantum pit structure layer 300；
Continuing with referring to fig. 2, can on above-mentioned multi-quantum pit structure layer 300 epitaxial growth EBL.EBL is that Al component is high
In the p-type AlGaN material of Quantum Well MQWs potential barrier, the thickness of electronic barrier layer 200 is between 1~100nm.Then it is being based on
Set gradually in the deep ultraviolet LED vertical chip of the gallium oxide of n-type doping gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500,
Aluminium gallium nitride alloy material layer 400, multi-quantum pit structure layer 300 and electronic barrier layer 200.
Step S500 makes p-type film layer 100 on the electronic barrier layer 200, described based on n-type doping to prepare
The deep ultraviolet LED vertical chip of gallium oxide.
Continuing with referring to fig. 2, can on above-mentioned electronic barrier layer 200 epitaxial growth p-GaN or p-AlGaN.If growth
Al component need to be higher than Quantum Well MQWs and be averaged Al component in p-AlGaN, the then p-AlGaN grown.Then based on n-type doping
Gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500, aluminium gallium nitride alloy material are set gradually in the deep ultraviolet LED vertical chip of gallium oxide
The bed of material 400, multi-quantum pit structure layer 300, electronic barrier layer 200 and p-type film layer 100.P-type gallium nitride material can refer to p-
GaN, i.e. GaN material p-type doping are wurtzite structures under GaN (gallium nitride) normal temperature and pressure.P-type aluminium gallium nitride alloy material can be
Refer to that p-AlGaN, i.e. AlGaN material p-type doping, AlGaN (aluminium gallium nitride alloy) are suitable for preparing visible light to UV wavelength range
Photoelectric device.
It should be noted that can take when making p-type film layer 100 on the electronic barrier layer 200 in the electricity
P-GaN film layer is made on sub- barrier layer 200, or p-AlGaN film layer is made on the electronic barrier layer 200.In order to
P-AlGaN is made for making p-GaN film layer on the electronic barrier layer 200, or on the electronic barrier layer 200
Film layer is described in detail, and two kinds of embodiments presented below are explained in detail:
The first embodiment can make p-GaN film layer on the electronic barrier layer 200.When needing formal dress knot
When structure, can by the making material of p-type film layer 100 select p-GaN, then at this time the one side of p-type film layer 100 can and electricity
The first side 210 on sub- barrier layer 200 is bonded to each other, and the another side of p-type film layer 100 can be with conductive 700 phase of silicon substrate
Mutually fitting.Fig. 3 is referred to, it at this time from bottom to up can be according in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping
It is secondary be provided with gallium oxide substrate 600, aluminium gallium nitride alloy buffer layer 500, aluminium gallium nitride alloy material layer 400, multi-quantum pit structure layer 300,
Electronic barrier layer 200 and p-type film layer 100.
Second of embodiment can make p-AlGaN film layer on electronic barrier layer 200.When needing inverted structure
When, p-AlGaN film layer can be bonded to each other with electronic barrier layer 200 (EBL).Fig. 4 is referred to, is being based on n-type doping at this time
Gallium oxide deep ultraviolet LED vertical chip in can be disposed with p-type film layer 100, electronic barrier layer from bottom to up
200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide substrate 600.
The present invention provides a kind of preparation method of deep ultraviolet LED vertical chip based on n-type doping gallium oxide, passes through acquisition
After gallium oxide substrate 600, by the preparation of aluminium gallium nitride alloy buffer layer 500 on the gallium oxide substrate 600；And by aluminium gallium nitride alloy material
The bed of material 400 is prepared on the aluminium gallium nitride alloy buffer layer 500；Multi-quantum pit structure layer 300 is prepared in the aluminium gallium nitride alloy again
In material layer 400；Simultaneously by the preparation of electronic barrier layer 200 on the multi-quantum pit structure layer 300；Then by p-type film layer
100 preparations are on the electronic barrier layer 200, to prepare the vertical core of deep ultraviolet LED of the gallium oxide based on n-type doping
Piece.Make to be disposed in the deep ultraviolet LED vertical chip of the gallium oxide based on n-type doping in this way p-type film layer 100,
Electronic barrier layer 200, multi-quantum pit structure layer 300, aluminium gallium nitride alloy material layer 400, aluminium gallium nitride alloy buffer layer 500 and gallium oxide lining
Bottom 600 then uses substrate of the conductive gallium oxide substrate 600 as deep ultraviolet LED epitaxial material, so that preparation is vertical
When the deep ultraviolet LED vertical chip of the gallium oxide of structure, removed without the substrate material to LED epitaxial wafer.Then overcome
The technological deficiency that needs to remove the substrate material of LED epitaxial wafer in the prior art.It is not necessarily to outside to LED to reach
The substrate material for prolonging piece is removed, convenient for preparing the technical effect of deep ultraviolet LED vertical chip.
It should be noted last that the above specific embodiment is only used to illustrate the technical scheme of the present invention and not to limit it,
Although being described the invention in detail referring to example, those skilled in the art should understand that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit and scope of the technical solution of the present invention, should all cover
In the scope of the claims of the present invention.
Claims (10)
1. a kind of deep ultraviolet LED vertical chip device based on n-type doping gallium oxide, which is characterized in that described to be based on n-type doping
The deep ultraviolet LED vertical chip device of gallium oxide includes:
P-type film layer；
Electronic barrier layer, the electronic barrier layer are provided with first side and second side, and the electronic barrier layer passes through described
First side is arranged in the p-type film layer, and the first side be located at the second side and the p-type film layer it
Between；
Multi-quantum pit structure layer, the multi-quantum pit structure layer are provided with third side and the 4th side, the multiple quantum wells knot
Structure layer is arranged in the second side by the third side, and the third side is located at the 4th side and described
Between second side；
Aluminium gallium nitride alloy material layer, the aluminium gallium nitride alloy material layer are provided with the 5th side and the 6th side, the aluminium gallium nitride alloy material
The bed of material is arranged on the 4th side by the 5th side, and the 5th side is located at the 6th side and described
Between 4th side；
Aluminium gallium nitride alloy buffer layer, the aluminium gallium nitride alloy buffer layer are provided with heptalateral face and the 8th side, and the aluminium gallium nitride alloy is slow
It rushes layer to be arranged on the 6th side by heptalateral face, and heptalateral face is located at the 8th side and described
Between 6th side；
Gallium oxide substrate, the gallium oxide substrate are provided with the 9th side and the tenth side, and the gallium oxide substrate passes through described
9th side is arranged on the 8th side, and the 9th side be located at the tenth side and the 8th side it
Between.
2. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as described in claim 1, it is characterised in that:
The making material of the p-type film layer is p-type gallium nitride material；
The thickness range of the electronic barrier layer is from 1nm to 100nm.
3. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as claimed in claim 2, it is characterised in that:
The emission wavelength of the multi-quantum pit structure layer is not less than 260nm.
4. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as claimed in claim 3, it is characterised in that:
The making material of the aluminium gallium nitride alloy material layer is N-shaped aluminium gallium nitride alloy material.
5. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as claimed in claim 4, it is characterised in that:
The making material of the aluminium gallium nitride alloy buffer layer is N-shaped aluminium gallium nitride alloy material；
The making material of the gallium oxide substrate is N-shaped gallium oxide material；
The thickness range of the gallium oxide substrate is from 100 μm to 700 μm.
6. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as described in claim 1, it is characterised in that:
The making material of the p-type film layer is p-type aluminium gallium nitride alloy material；
The thickness range of the electronic barrier layer is from 1nm to 100nm.
7. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as claimed in claim 6, it is characterised in that:
The emission wavelength of the multi-quantum pit structure layer is not less than 260nm.
8. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as claimed in claim 7, it is characterised in that:
The making material of the aluminium gallium nitride alloy material layer is N-shaped aluminium gallium nitride alloy material.
9. the deep ultraviolet LED vertical chip device based on n-type doping gallium oxide as claimed in claim 8, it is characterised in that:
The making material of the aluminium gallium nitride alloy buffer layer is N-shaped aluminium gallium nitride alloy material；
The making material of the gallium oxide substrate is N-shaped gallium oxide material；
The thickness range of the gallium oxide substrate is from 100 μm to 700 μm.
10. a kind of preparation method of the deep ultraviolet LED vertical chip based on n-type doping gallium oxide, which is characterized in that described to be based on
The preparation method of the deep ultraviolet LED vertical chip of n-type doping gallium oxide includes:
Gallium oxide substrate is obtained, aluminium gallium nitride alloy buffer layer is made on the gallium oxide substrate；
Aluminium gallium nitride alloy material layer is made on the aluminium gallium nitride alloy buffer layer；
Multi-quantum pit structure layer is made in the aluminium gallium nitride alloy material layer；
Electronic barrier layer is made on the multi-quantum pit structure layer；
P-type film layer is made on the electronic barrier layer, is hung down with preparing the deep ultraviolet LED based on n-type doping gallium oxide
Straight chip.
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| CN110504158A (en) * | 2019-08-19 | 2019-11-26 | 中国科学技术大学 | Gallium oxide semiconductor manufacturing process and gallium oxide semiconductor containing current barrier layer |
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| CN102124575A (en) * | 2008-11-17 | 2011-07-13 | Lg伊诺特有限公司 | Method for manufacturing gallium oxide substrate, light emitting device, and method for manufacturing the light emitting device |
| CN103489967A (en) * | 2013-09-05 | 2014-01-01 | 大连理工大学 | Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film |
| CN104183678A (en) * | 2014-08-22 | 2014-12-03 | 江苏鑫博电子科技有限公司 | LED flip chip and patterned substrate and manufacturing method of LED flip chip |
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| CN102124575A (en) * | 2008-11-17 | 2011-07-13 | Lg伊诺特有限公司 | Method for manufacturing gallium oxide substrate, light emitting device, and method for manufacturing the light emitting device |
| CN103489967A (en) * | 2013-09-05 | 2014-01-01 | 大连理工大学 | Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film |
| CN104183678A (en) * | 2014-08-22 | 2014-12-03 | 江苏鑫博电子科技有限公司 | LED flip chip and patterned substrate and manufacturing method of LED flip chip |
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