CN109273470A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN109273470A CN109273470A CN201811081686.6A CN201811081686A CN109273470A CN 109273470 A CN109273470 A CN 109273470A CN 201811081686 A CN201811081686 A CN 201811081686A CN 109273470 A CN109273470 A CN 109273470A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 27
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- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 230000005622 photoelectricity Effects 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 abstract description 13
- 230000007812 deficiency Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 51
- 238000010586 diagram Methods 0.000 description 9
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- 238000005286 illumination Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
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- 241000196435 Prunus domestica subsp. insititia Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Technical solution of the present invention discloses a kind of imaging sensor and forming method thereof, and described image sensor includes: semiconductor substrate；The photodiode being set in the semiconductor substrate and floating diffusion region；Grid are transmitted, are located on the semiconductor substrate, for controlling the photoelectronic reading generated in photodiode；Charge transmission channel connects the photodiode and floating diffusion region, when transmission grid are closed, for the saturation current generated in photodiode to be transmitted to floating diffusion region.Charge transmission channel is arranged in described image sensor between the photodiode and floating diffusion region, is not only avoided that the technological deficiency that saturation current generates in the prior art, but also also correspond to improve the full trap capacitor of photodiode.
Description
Technical field
The present invention relates to the manufacturing field of semiconductor devices more particularly to imaging sensors and forming method thereof.
Background technique
Imaging sensor receives optical signal from object and converts optical signal into electric signal, and electric signal can be used for by transmitting
Further processing, such as digitizes, then stores in such as memory device of memory, CD or disk, or is used for
Show, print on display etc..Imaging sensor is commonly used in the dress such as digital camera, video camera, scanner, facsimile machine
It sets.
In the prior art, multiple pixels that imaging sensor is generally included with the arrangements of two-dimensional matrix.It is described each
Pixel includes photodiode, and the photodiode generates optical charge in response to incident light, and using optical charge output come
Output pixel signal.However, excessive optical charge can be generated in photodiode when imaging sensor is exposed to strong light, this
A little excessive optical charges " may be overflowed " or be moved in adjacent photodiode.The optical charge quilt of these excessive " spillings "
Referred to as saturation current (blooming current).If being exported by optical charge by the light that " may be overflowed " or migrate
Charge export, then actually reduce the full trap capacitor of the photodiode.
Summary of the invention
Technical solution of the present invention technical problems to be solved are to need for existing image sensor structure by photoelectricity two
Defect derived from the optical charge of excess generation in pole pipe provides a kind of new image sensor structure, improves two pole of photoelectricity
The full trap capacitor and better " spilling " performance of offer of pipe.
In order to solve the above technical problems, technical solution of the present invention provides a kind of imaging sensor, comprising:
Semiconductor substrate；
The photodiode being set in the semiconductor substrate and floating diffusion region；
Grid are transmitted, are located on the semiconductor substrate, for controlling the photoelectronic reading generated in photodiode；
Charge transmission channel connects the photodiode and floating diffusion region and is used for when transmission grid are closed by photoelectricity two
The saturation current generated in pole pipe is transmitted to floating diffusion region.
Optionally, the photodiode, floating diffusion region are identical with the doping type of charge transmission channel.
Optionally, the doping type of the photodiode, floating diffusion region and charge transmission channel with it is semiconductor-based
The doping type of plate is opposite.
Optionally, described two or four photodiodes share a floating diffusion region.
Optionally, sharing two of a floating diffusion region or four photodiodes has same pixel.
Optionally, described image sensor further includes the another side relative to transmission grid positioned at the semiconductor substrate
Filter layer and lenticule.
Technical solution of the present invention also provides a kind of forming method of above-mentioned imaging sensor, comprising: provides semiconductor substrate；
Photodiode and floating diffusion region are formed in the semiconductor substrate；It is logical that charge transmission is formed in the semiconductor substrate
Road, the charge transmission channel connect the photodiode and floating diffusion region；Transmission is formed on the semiconductor substrate
Grid, the transmission grid are for controlling the photoelectronic reading generated in photodiode；When transmitting grid closing, the charge is passed
Defeated channel is used to the saturation current generated in photodiode being transmitted to floating diffusion region.
Optionally, the charge transmission channel is formed by plasma doping process.
Optionally, the method also includes the another sides relative to transmission grid in the semiconductor substrate to form filter layer
And the step of lenticule.
Compared with prior art, technical solution of the present invention has the advantages that
Charge transmission channel is arranged in imaging sensor of the present invention between the photodiode and floating diffusion region,
The charge transmission channel is that dim light electron propagation ducts can be used for when the transmission grid are in close state by photoelectricity
The saturation current generated in diode is transmitted to floating diffusion region and is read.Not only it is avoided that saturation current production in the prior art
Raw technological deficiency, and also correspond to improve the full trap capacitor of photodiode.
Detailed description of the invention
Fig. 1 is the plan view of a pixel region of image sensor structure described in the embodiment of the present invention；
Fig. 2 is the cross section structure schematic diagram of imaging sensor a direction of the embodiment of the present invention；
Fig. 3 (1)~Fig. 3 (4) is the photodiode of a pixel of described image sensor of the embodiment of the present invention and floats
Job order schematic diagram of the dynamic diffusion region under charge transmission channel and transmission grid effect；
When Fig. 4 (1)~Fig. 4 (5) is that two photodiodes of the embodiment of the present invention share a floating diffusion region, a picture
Job order schematic diagram of the photodiode and floating diffusion region of element under charge transmission channel and transmission grid effect；
When Fig. 5 (1)~Fig. 5 (7) is that four photodiodes of the embodiment of the present invention share a floating diffusion region, a picture
Job order schematic diagram of the photodiode and floating diffusion region of element under charge transmission channel and transmission grid effect.
Specific embodiment
The present embodiment needs the optical charge by excess generation in photodiode to lead for existing image sensor structure
Out, to reduce the defect of the full trap capacitor of the photodiode, provide a kind of new image sensor structure, by
Charge transmission channel is set between the photodiode and floating diffusion region, even if in the case where transmitting grid closing,
The excessive optical charge fractional transmission floating diffusion region that can will be generated in the photodiode, to improve the photoelectricity two
The full trap capacitor and better " spilling " performance of offer of pole pipe.
In the present embodiment, attached drawing is only schematically described the structure of imaging sensor, does not scheme to composition
As the specific structure and specific location relationship of each component of sensor do stringent restriction, also, each block diagram and reality
The size of border component is not drawn necessarily to scale, and in some cases, and in order to clearly demonstrate the feature of embodiment, ratio can
To be exaggerated.In the present specification, specific term has been used.Term is for describing the present invention and being not used in restriction understanding or limitation
The scope of the present invention.In addition, "comprises/comprising" used in the description or " include/include " indicate to exist or add
One or more components, step, operation and element.Technical solution of the present invention is carried out below with reference to embodiment and attached drawing detailed
Explanation.
It is the plan view of a pixel region of the present embodiment described image sensor structure with reference to Fig. 1.Imaging sensor
Pixel region include photodiode 110, transmit grid 140 and floating diffusion region 120.The photodiode can wrap
Include one or more than one, be overlappingly arranged in semiconductor substrate in vertical direction.The photodiode is used for will
The optical signal received is converted to electric signal.Transmission grid are arranged in the surface of semiconductor substrate or are partially submerged into semiconductor substrate
Interior, the transmission grid may include recessed gate, saddle fin grid or buried gate etc..The transmission transistor formed by the transmission grid
On or off, to control the reading of the optical charge generated in photodiode.Although being merely representative of out a pixel in Fig. 1
Unit, still, in order to improve the integrated level of imaging sensor, when containing more than one pixel unit, multiple light
Electric diode can share a transmission grid.In the present embodiment, the pixel region also include charge transmission channel (
Can't see in plan view shown in FIG. 1), when transmitting grid closing, the charge transmission channel can be used for photodiode
The excessive optical charge in the part of middle generation is transmitted to floating diffusion region.The photoelectron generated in the photodiode is in expansion of floating
Area is dissipated to be read.
When the photodiode of light irradiation image sensor, optical charge is generated in the photodiode, is transmitted at this time
Grid are kept in off position.Using the structure of imaging sensor described in the present embodiment, what is generated in photodiode is excessive
Optical charge can be flowed into the floating diffusion region by charge transmission channel, and continue to remain off in transmission grid
In the case of, it is read in floating diffusion region.When the transmission grid are opened, other generated in the photodiode are electric
Lotus flows to floating diffusion region by transmission grid and is read.The excessive optical charge generated in the photodiode refers to photoelectricity
The saturation current (blooming current) of diode.
It is the cross section structure schematic diagram of imaging sensor a direction of the embodiment of the present invention, the image with reference to Fig. 2
Sensor includes:
Semiconductor substrate 100；The semiconductor substrate 100 can be silicon substrate, can also for germanium, SiGe, silicon carbide,
GaAs or gallium indium are either the germanium substrate on the silicon substrate or insulator on insulator, or growth has epitaxial layer
Substrate.More than one semiconductor devices and interconnection line, example may be already formed in the semiconductor substrate 100
The attached drawing of such as reset transistor and processing circuit, the present embodiment is no longer indicated.
Imaging sensor described in the present embodiment further includes photodiode 110, the photodiode 110 be one or
Person more than one, arrange in the form of an array in semiconductor substrate 100.
Optical signal in the semiconductor substrate 100 comprising being used to receive is converted to one or one of electric signal
A above photodiode.As needed, the semiconductor substrate 100 is divided the pixel region for being set as different, and one
The position of the photodiode of a pixel is corresponding with a pixel region in the semiconductor substrate.It is described in the present embodiment
When pixel region, if being not specifically stated, it can refer to any one pixel region.
The photodiode can adulterate work by ion implanting etc. by the set depth in semiconductor substrate 100
Skill is formed.Optionally, when the semiconductor substrate 100 is that p-type is adulterated, the photodiode 110 is n-type doping.Work as institute
State semiconductor substrate 100 be n-type doping when, the photodiode 110 be p-type adulterate.In a specific implementation of the invention
In example, semiconductor substrate is p-type doping, and photodiode 110 is n-type doping, when executing photodiode doping process, is carried out
The energy range of n-type doping is 100Kev to 200Kev, and dopant dose is 1E13 to 5E13.
In some cases, it when such as photodiode is exposed to strong light, can generate in photodiode than two pole of photoelectricity
More charges that pipe is able to maintain, that is to say, that the quantity of electric charge generated in photodiode can be more than photodiode
Full trap capacitor (FWC).If the charge (being referred to as saturation current in the present embodiment) that these excess generate cannot be read in time,
These saturation currents will enter the photodiode closed on, to influence the performance of photodiode.On the other hand, photoelectricity is improved
The photoelectric conversion performance of the photodiode can be improved in the full trap capacitor of diode again.Therefore, figure provided in this embodiment
As sensor, purpose, which is that, is transmitted to floating diffusion region by charge transmission channel for the saturation current, can not only keep away
Exempt from the technological deficiency that saturation current generates in the prior art, and also corresponds to improve the full trap capacitor of photodiode.
Floating diffusion region 120, depth of the floating diffusion region in semiconductor substrate is close to photodiode array
Depth in the semiconductor substrate, the optical charge that photodiode generates flow to the floating diffusion region and are read.
Form the method for the floating diffusion region 120 for example are as follows: in the semiconductor substrate set depth carry out etc. from
Daughter doping.Optionally, when the semiconductor substrate 100 is that p-type is adulterated, the floating diffusion region 120 is n-type doping.When
When the semiconductor substrate 100 is n-type doping, the floating diffusion region 120 is p-type doping.It is specific real at of the invention one
It applies in example, semiconductor substrate is p-type doping, and floating diffusion region is n-type doping, when executing floating diffusion region doping process, carries out N
The energy range of type doping is 50Kev to 150Kev, and dopant dose is 1E15 to 5E15.
Optionally, the photodiode 110 and the floating diffusion region 120 are in the semiconductor substrate 100
Setting depth it is close.
In the present embodiment, charge transmission channel 130, institute are set between the photodiode 110 and floating diffusion region
The charge transmission channel stated is that dim light electron propagation ducts can be used for when the transmission grid are in close state by photoelectricity two
The saturation current generated in pole pipe is transmitted to floating diffusion region and is read.Not only it is avoided that saturation current generation in the prior art
Technological deficiency, and also correspond to improve the full trap capacitor of photodiode.
The technique for forming the charge transmission channel 130 is, for example, plasma doping process, in semiconductor substrate
Set depth carries out N-type or p-type doping, to form the charge transmission channel.Due to the charge transmission channel
It is used only for flowing to floating diffusion region for controlling saturation current when transmitting grid and closing, is weak charge transmission channel therefore.
The charge transmission channel 130 is structurally joining together the photodiode and floating diffusion region, therefore, in semiconductor
The depth being arranged in substrate is usually no more than the setting depth of floating diffusion region.
Optionally, when the semiconductor substrate 100 is that p-type is adulterated, the charge transmission channel 130 is n-type doping.When
When the semiconductor substrate 100 is n-type doping, the charge transmission channel 130 is p-type doping.It is specific at of the invention one
In embodiment, semiconductor substrate is p-type doping, and charge transmission channel 130 is n-type doping, and the charge transmission channel carries out N-type
When plasma doping, the doping concentration range in the charge transmission channel is 1E12 to 5E12, carries out the energy of n-type doping
Range is 80Kev to 100Kev.
Wherein, the charge transmission channel 130, floating diffusion region 120 is identical with the doping type of photodiode 110,
That is, charge transmission channel 130, floating diffusion region 120 and photodiode 100 are all that n-type doping or p-type are adulterated,
Specific doping type depends on the doping type of semiconductor substrate.
Grid 140 are transmitted, for controlling the stream of most optical charge in photodiode on the semiconductor substrate
It is dynamic.
In addition, further including isolation structure 150 in the imaging sensor, the isolation structure 150 is located at described half
It in conductor substrate, can be formed by shallow ditch groove separation process, silica, the insulating materials such as silicon nitride can be filled in groove.This
In embodiment, the bottom plane of the isolation structure can extend close to opposite another surface of semiconductor substrate.
In the another side of the semiconductor substrate, i.e., relative to the another side for transmitting grid, it is additionally provided with colour filter 160, institute
Insulation material layer is usually provided between the colour filter stated and semiconductor substrate 100, the insulation material layer can be one layer
Or one layer or more of composite insulating material, since it is common process, the present embodiment is attached to be not shown in the figure.Colour filter 160 makes
The light of predetermined color corresponding with pixel region passes through, and for the colour filter of each pixel region setting corresponding color.
Lenticule 170 can be formed on colour filter 160.The lenticule is used to assemble light for each pixel unit,
Its material is, for example, that the copolymer resin of polystyrene resin, acrylic resin or these resins is formed.It is formed described micro-
The technique of mirror can be any one existing lenticule manufacture craft, and this will not be repeated here.
The present embodiment Fig. 3 (1)~Fig. 3 (4) is the photodiode of a pixel of described image sensor and expansion of floating
Dissipate job order schematic diagram of the area under charge transmission channel and transmission grid effect.With reference to Fig. 3 (1), photodiode 110 and floating
All optical charges in dynamic diffusion region 120 all have been removed, and refer to Fig. 3 (2) later, keep transmission grid 140 in off position,
Photodiode 110 starts to generate optical charge, part of optical charge is passed by the charge transmission channel under illumination condition
Floating diffusion region 120 is transported to, later, with reference to Fig. 3 (3), transmission grid 140 are still kept in off position, in the floating diffusion
The optical charge in area 120 is read, finally, with reference to Fig. 3 (4), opens the transmission grid 140, other in photodiode 110
Optical charge is all read, and in the whole process, by charge transmission channel, floating diffusion region 120 is equivalent to a supplement
Diode, the photoelectron quantity read are the summation for the optical charge that Fig. 3 (3) step corresponding with (4) two figure of Fig. 3 is read, because
The full trap capacitor of this whole image sensor is enhanced.
In actual process, in order to improve the integrated level of semiconductor devices, two or more photodiode
A floating diffusion region can be shared, is that two photodiodes share a floating with reference to shown in attached drawing 4 (1) to attached drawing 4 (5)
When diffusion region, work of the photodiode and floating diffusion region of a pixel under charge transmission channel and transmission grid effect is suitable
Sequence schematic diagram.
With reference to Fig. 4 (1), all optical charges in two photodiodes 110a, 110b and floating diffusion region 120 are all
It is removed, wherein the shared floating diffusion region 120 two photodiodes 110a, 110b, but two photodiode 110a,
110b is respectively using individually transmission grid 140a, 140b.Fig. 4 (2) are referred to later, transmission grid 140a, 140b is kept to close shape
State, two photodiodes 110a, 110b start to generate optical charge, part of optical charge passes through described under illumination condition
Charge transmission channel (two individual charge transmission channels, figure in fail to show) is transmitted to floating diffusion region 120, later, ginseng
Fig. 4 (3) to be examined, still keep transmission grid 140a, 140b in off position, the optical charge in the floating diffusion region 120 is read,
Then, with reference to Fig. 4 (4), transmission grid 140a is opened, and keeps transmission grid 140b in off position, in photodiode 110a
Other optical charges all read, finally, with reference to Fig. 4 (5), open transmission grid 140b, its in photodiode 110b
He is all read optical charge.
In the whole process, by two independent charge transmission channels, a supplement is equivalent in floating diffusion region
Diode, the photoelectron quantity that photodiode 110a is read are as follows:
4(4)+1/2*4(3)-t*A
Wherein, 4 (4) are the optical charge number that step corresponding to attached drawing 4 (4) is read, and 4 (3) are step corresponding to attached drawing 4 (3)
The optical charge number of reading, t are the time terminated to step corresponding to attached drawing 4 (4) time that step corresponding to attached drawing 4 (3) starts,
A is electronics flow rate.
The photoelectron quantity that photodiode 110b is read are as follows:
4(5)+1/2*4(3)+t*A
Wherein, 4 (5) are the optical charge number that step corresponding to attached drawing 4 (5) is read, and 4 (3) are step corresponding to attached drawing 4 (3)
The optical charge number of reading, t are the time terminated to step corresponding to attached drawing 4 (4) time that step corresponding to attached drawing 4 (3) starts,
A is electronics flow rate.
In the above process, the optical charge that is read respectively from two photodiodes 110a and 110b of whole image sensor
Quantity increase, therefore the full trap capacitor of photodiode is enhanced.
When two photodiodes share a floating diffusion region, described two photodiodes have same picture
Element, " same pixel " refers to the identical pixel of color here, such as described two photodiodes are respectively two red pictures
The photodiode of element, alternatively, two photodiodes are respectively the photodiode of two green pixels, alternatively, two light
Electric diode is respectively the photodiode of two blue pixels.
In addition to this, in order to improve the integrated level of semiconductor devices, there is also four photodiodes to share a floating
The case where diffusion region, with reference to shown in attached drawing 5 (1) to attached drawing 5 (7), when being that four photodiodes share a floating diffusion region,
Job order schematic diagram of the photodiode and floating diffusion region of one pixel under charge transmission channel and transmission grid effect.
Institute with reference to Fig. 5 (1), in four photodiode 110a ', 110b ', 110c ', 110d ' and floating diffusion region 120
There is optical charge all to have been removed, wherein four photodiode 110a ', 110b ', 110c ', 110d ' share floating diffusion region
120, but four photodiode 110a ', 110b ', 110c ', 110d ' transmit grid 140a ', 140b ' using individual respectively,
140c ', 140d '.
Later refer to Fig. 5 (2), keep transmission grid 140a ', 140b ', 140c ', 140d ' in off position, four photoelectricity two
Pole pipe 110a ', 110b ', 110c ', 110d ' starts to generate optical charge, part of optical charge passes through described under illumination condition
Charge transmission channel (four individual charge transmission channels, figure in fail to show) is transmitted to floating diffusion region 120；
Later, transmission grid 140a ', 140b ', 140c' are still kept with reference to Fig. 5 (3), 140d' in off position, in institute
The optical charge for stating floating diffusion region 120 is read；
Then, with reference to Fig. 5 (4), transmission grid 140a ' is opened, and keeps transmission grid 140b ', 140c ', 140d ' closing shape
State, other optical charges in photodiode 110a ' are all read；
Then, with reference to Fig. 5 (5), transmission grid 140b ' is opened, and keeps transmission grid 140c ' and 140d ' in off position,
Other optical charges in photodiode 110b ' are all read；
Then, with reference to Fig. 5 (6), transmission grid 140c ' is opened, and keeps transmission grid 140d ' in off position, in photoelectricity two
Other optical charges in pole pipe 110c ' are all read；
Finally, opening transmission grid 140d ', other optical charges in photodiode 110d ' are by whole with reference to Fig. 5 (7)
It reads.
In the whole process, by four independent charge transmission channels, a supplement is equivalent in floating diffusion region
Diode, the photoelectron quantity that photodiode 110a ' is read are as follows:
5(4)+1/4*5(3)-t1*A*3
The photoelectron quantity that photodiode 110b ' is read are as follows:
5(5)+1/4*5(3)+t1*A-t2*A*2
The photoelectron quantity that photodiode 110c ' is read are as follows:
5(6)+1/4*5(3)+t1*A+t2*A-t3*A
The photoelectron quantity that photodiode 110d ' is read are as follows:
5(7)+1/4*5(3)+t1*A+t2*A+t3*A
Wherein, 5 (3) are the optical charge number that step corresponding to attached drawing 5 (3) is read, and 5 (4) are step corresponding to attached drawing 5 (4)
The optical charge number of reading, 5 (5) are the optical charge number that step corresponding to attached drawing 5 (5) is read, and 5 (6) are the corresponding step of attached drawing 5 (6)
Suddenly the optical charge number read, 5 (7) are the optical charge number that step corresponding to attached drawing 5 (7) is read；
T1 is the time terminated to step corresponding to attached drawing 5 (4) time that step corresponding to attached drawing 5 (3) starts, and t2 is attached
The time that the time that Fig. 5 (4) corresponding step starts terminates to step corresponding to attached drawing 5 (5), t3 are the corresponding step of attached drawing 5 (5)
Suddenly the time that the time started terminates to step corresponding to attached drawing 5 (6)；A is electronics flow rate.
In the above process, from four photodiodes 110a ', 110b ', 110c of whole image sensor ', 110d ' points
The quantity for the optical charge not read increases, therefore the full trap capacitor of photodiode is enhanced.
When four photodiodes share a floating diffusion region, four photodiodes have same picture
Element, " same pixel " refers to the identical pixel of color here, such as four photodiodes are respectively four red pictures
The photodiode of element, alternatively, four photodiodes are respectively the photodiode of four blue pixels, alternatively, four light
Electric diode is respectively the photodiode of four green pixels.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any ability
Field technique personnel without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this
Inventive technique scheme makes possible variation and modification, therefore, anything that does not depart from the technical scheme of the invention, according to this hair
Bright technical spirit belongs to the technology of the present invention to any simple modifications, equivalents, and modifications made by embodiment of above
The protection scope of scheme.
Claims (9)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate；
The photodiode being set in the semiconductor substrate and floating diffusion region；
Grid are transmitted, are located on the semiconductor substrate, for controlling the photoelectronic reading generated in photodiode；
Charge transmission channel connects the photodiode and floating diffusion region, when transmitting grid closing, is used for two pole of photoelectricity
The saturation current generated in pipe is transmitted to floating diffusion region.
2. imaging sensor as described in claim 1, which is characterized in that photodiode, floating diffusion region and the charge
The doping type of transmission channel is identical.
3. imaging sensor as described in claim 1, which is characterized in that photodiode, floating diffusion region and the charge
The doping type of transmission channel and the doping type of semiconductor substrate are opposite.
4. imaging sensor as described in claim 1, which is characterized in that including more than one photodiode, wherein two
Or four photodiodes share a floating diffusion region.
5. imaging sensor as claimed in claim 4, which is characterized in that share two or four light of a floating diffusion region
Electric diode has same pixel.
6. imaging sensor as described in claim 1, which is characterized in that described image sensor further includes being located at the semiconductor
The filter layer and lenticule of the another side relative to transmission grid of substrate.
7. a kind of forming method of any one of claims 1 to 5 described image sensor characterized by comprising
Semiconductor substrate is provided；
Photodiode and floating diffusion region are formed in the semiconductor substrate；
Charge transmission channel is formed in the semiconductor substrate, the charge transmission channel connects the photodiode and floats
Dynamic diffusion region；
On the semiconductor substrate formed transmission grid, the transmission grid be used for control generated in photodiode it is photoelectronic
It reads；When transmitting grid closing, the charge transmission channel is floating for the saturation current generated in photodiode to be transmitted to
Dynamic diffusion region.
8. the forming method of imaging sensor as claimed in claim 7, which is characterized in that formed by plasma doping process
The charge transmission channel.
9. the forming method of imaging sensor as claimed in claim 7, which is characterized in that further include in the semiconductor substrate
Another side relative to transmission grid forms filter layer and lenticule.
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