CN109087926A - Imaging sensor, electronic device and its manufacturing method - Google Patents
Imaging sensor, electronic device and its manufacturing method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This disclosure relates to imaging sensor, electronic device and its manufacturing method.In one embodiment, this disclosure relates to which a kind of substrate of imaging sensor, the substrate include the first substrate；And second substrate；Wherein first substrate has groove, and second substrate is formed in the groove of first substrate, and the band gap of second substrate first substrate is wider.
Description
Technical field
The present disclosure relates generally to technical field of semiconductors, more particularly, to imaging sensor, electronic device and its manufacture
Method.
Background technique
In recent years, the solid state image sensor of such as video camera or Digital Still Camera is sensed usually using ccd image
Device or CMOS (complementary metal oxide semiconductor) imaging sensor, are applied not only to consumer electronics field, such as Miniature digital
In camera, mobile phone camera, video camera and digital single-lens reflex camera, and in fields such as automotive electronics, monitoring, biotechnology and medicine
It is widely used.
As the requirement to pixel size is growing day by day, the number of pixel just increases sharply in imaging sensor, Huo Zhetu
As the size of sensor is just being reduced rapidly.However, the phase with the increase of number of pixels or the reduction of size, in imaging sensor
Interval between adjacent pixel becomes smaller, thus produce one be referred to as blooming new problem, i.e., pixel saturation after charge
Leak into adjacent pixel.The charge spilt into adjacent pixel can make adjacent pixel output that cannot embody its true incident light quantity
Electric signal.
In addition, in order to obtain brighter shooting image in dark place, in addition to red (R) pixel, green (G) pixel
Except blue (B) pixel, the image sensor apparatus including white (W) pixel has also been devised.Since white light is by different face
The light of color (that is, different frequency) mixes, therefore the spectrum of white light is naturally than the spectral width of colourama.Item is shone in same light
Under part, white pixel can be saturated earlier due to that can receive greater number of photon than other colour elements, and white pixel exists
Generated charge can be spilt into adjacent pixel after saturation, therefore charge leakage has occurred between pixel.Around leaking into
The charge of colour element (that is, R pixel, G pixel and B pixel) can undesirably be such that these colour elements colour, so as to cause
The distortion of picture occurs.
Therefore, it is necessary to improve this coloring and distortion phenomenon, and inhibit the decline of picture quality.
Summary of the invention
In order to solve one or more defects in the presence of the prior art, the disclosure provides a kind of new skill of this field
Art.
Since white light is mixed by the light of different colours (that is, different frequency), in the figure including RGBW pixel
As in sensor, white (W) pixel can receive the light within the scope of broader spectrum, therefore the white pixel under identical illumination condition
It can receive more photons compared to other colour elements, to generate more photo-generated carriers, thus white pixel can be than it
He is saturated colour element earlier.And generated charge can be spilt into neighboring color picture elements white pixel after saturation, be leaked
Charge to neighboring color picture elements can undesirably be such that the colour element colours, so as to cause the distortion of picture.
In order to solve the above technical problems, the present invention provides a kind of improved image sensor structures to reduce even
Avoid in white pixel sensor generated charge leakage to adjacent color pixel sensor.The improved direction is:
In the case where not reducing white pixel sensor light-receiving area, photo-generated carrier caused by white pixel sensor is reduced
Quantity, to reduce photoelectric conversion efficiency；Accordingly even when having greater number of photon by white filter is incident on white
On element sensor (compared with other color pixel sensors), since the lower photoelectric conversion of white pixel sensor is imitated
Rate, the photo-generated carrier generated can be reduced.Photo-generated carrier will not leak into adjacent color picture because of too early saturation as a result,
Plain sensor, or will not largely leak into neighboring color picture elements sensor.
Specifically, by using wide bandgap semiconductor materials (such as the wide bandgap semiconductor materials such as α-Si) as white
The substrate of the light-sensitive element of element sensor, so that white pixel sensor only absorbs the higher photon of frequency in white spectrum, from
And less photo-generated carrier is generated compared with the element sensor of general silicon substrate under the conditions of same light is shone.It is other colored
The light-sensitive element of element sensor uses the substrate more narrower than white pixel sensor band gap, such as general Si semiconductor material to make
For substrate.
It is worth noting that although referred in the present invention in order to solve white pixel sensor be saturated too early ask
Topic uses wide bandgap material for white pixel sensor；But the present invention is not limited to use only for white pixel sensor
Wide bandgap material.In other special photo environments, if the element sensor of certain color is compared to the picture of other colors
Plain sensor can be done sth. in advance to be saturated, and can do sth. in advance the element sensor being saturated for this using wide bandgap semiconductor materials, and for
The element sensor of other colors still uses general Si semiconductor material partly to lead as substrate, or using than above-mentioned broad-band gap
The narrower semiconductor material of the band gap of body material is as substrate.
In one embodiment of the invention, a kind of substrate of imaging sensor is provided, it is characterised in that the substrate
It include: the first substrate；And second substrate；Wherein first substrate has groove, and second substrate is formed in described the
In the groove of one substrate, the band gap of second substrate first substrate is wider.
In another embodiment of the present invention, a kind of imaging sensor is provided, it is characterised in that described image sensing
Device includes pixel sensor array, and the pixel sensor array includes multiple first element sensors and multiple second pixels
Sensor；First substrate, first element sensor are arranged in first substrate；Second substrate, second pixel
Sensor arrangement is in second substrate；Wherein first substrate has groove, and second substrate is formed in described the
In the groove of one substrate, the band gap of second substrate first substrate is wider.
In another embodiment of the present invention, a kind of method of substrate for manufacturing imaging sensor is provided, including is mentioned
For the first substrate；First substrate is processed to form groove；And the second substrate is formed in the groove, second lining
The band gap at bottom is wider compared with the first substrate.
In another embodiment of the present invention, a kind of method for manufacturing imaging sensor is provided, including provides first
Substrate；First substrate is processed to form groove；The second substrate is formed in the groove, is formed in first substrate
First element sensor；And the second element sensor is formed in second substrate, the band gap of second substrate is compared with
One substrate is wider.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Figure 1A shows RGB (Bayer array) pixel array；
Figure 1B show further include in addition to rgb pixel white (W) pixel pixel array；
Fig. 2 shows the potential energy that the imaging sensor after charge overflows occurs between white pixel and neighboring color picture elements
Figure；
Fig. 3 shows the sectional view of imaging sensor according to an embodiment of the invention；
Fig. 4 is the schematic diagram of band gap；
Fig. 5 shows the flow chart for manufacturing imaging sensor according to an embodiment of the invention.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as a part of this specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Figure 1A is the pixel array of Bayer array, and wherein G element is placed in chequer, and R pixel and B element
It is disposed alternately in every a line of remainder.In fig. ib, W pixel is added in rgb pixel, in this way in dark environment
In can obtain brighter shooting image.In this pixel array for including W pixel (Figure 1B), due to as highly sensitive picture
Other pixels of the W pixel ratio of element are saturated earlier, so charge spills into other adjacent pixels from W pixel, other pixel meetings in this way
Generate distortion phenomenon.
Imaging sensor after charge overflows occurs between white pixel sensor and neighboring color picture elements sensor for Fig. 2
Potential energy diagram.Color pixel sensor and white pixel sensor generate charge according to by the incident light quantity of color filter, by
The light of broader spectrum can be received in white pixel sensor, therefore received photon numbers are greater than colour element sensing
The photon numbers that device receives.Therefore, at the same time towards incident light in the case where white pixel sensor can be passed than colour element
Sensor is saturated earlier.After saturation, it since transfer gate is at this time also in closed state, is overflowed in white pixel sensor
Photo-generated carrier be not up to floating diffusion region, but can cross between white pixel sensor and color pixel sensor
The potential barrier of isolated area and spill into adjacent color pixel sensor, so that neighbouring color pixel sensor is due to connecing
It has received the charge of spilling and exports the pixel value not squared with the fact.
In the present invention, it illustrates only white pixel sensor and can generate charge due to receiving greater number of photon and let out
The case where leakage, but the present invention is not limited to the saturation leakage situations of white pixel sensor.Present invention may apply to others
Color image sensor due to being saturated the case where generating leakage too early.
Fig. 3 is the sectional view according to the imaging sensor of one embodiment of the present of invention.Imaging sensor includes that pixel passes
Sensor array 301, the pixel sensor array include the first element sensor 301A and the second element sensor 301B,
In the first element sensor 301 be formed in the first substrate 302A, and the second element sensor 301B is formed in the second substrate
In 302B.Second substrate 302B is formed in the groove of the first substrate 302A, and the band gap of the second substrate 302B is compared with the first lining
The band gap of bottom 302A is wider.Preferably, the second substrate can be chosen from following one or more kinds of materials: GaN, GaAs, α-
Si、Si-C、InN、Inx-Ga1-xN。
Light-sensitive element (for example, photodiode) in element sensor is the semiconductor element for converting incident light into electric current
Part, so that element sensor can export the electric signal for embodying input light quantity.When photon is absorbed by light-sensitive element, light-sensitive element
Electric current, i.e. photo-generated carrier can be generated.The substrate material of light-sensitive element is most important for the performance of light-sensitive element, because only that
Photon with enough energy can excite the electronics of substrate material to cross the band gap of substrate material to generate electric current.Specifically
For, the not continuous value of the energy of electronics in solid, some discontinuous energy bands.Wanting conductive just must have freedom
The presence of electrons and holes, energy band existing for free electron are known as conduction band (can be conductive), and energy band existing for free hole is known as valence
Band (also can be conductive).Bound electronics is to becoming free electron, it is necessary to obtain enough energy and transits to from valence band and lead
Band, the minimum value of this energy are exactly band gap.
As shown in figure 4, band gap is the energy difference between the minimum point of the conduction band of semiconductor material and the highest point of valence band.Band
Gap is bigger, and electronics is excited to conduction band by valence band and just needs bigger energy.Therefore, for semiconductor material, valence band is got over
Greatly, electronics is promoted from the valence band into the difficult also bigger of conduction band, so that intrinsic carrier concentration is lower.
In light-sensitive element, when the energy h γ of the incident photon with frequency γ is greater than band gap width EgWhen (referring to as follows
Formula), the energy h γ of the incident photon is just enough to support electronics from valence band across band-gap transition to conduction band.In the case, light
Son is absorbed, and generates electron hole pair, which forms electric current.The photon that electric current characterization light-sensitive element is absorbed
Amount.
H γ > Eg
In imaging sensor shown in Fig. 3, the band gap width of the second substrate is more wider than the band gap width of the first substrate.Cause
This, the light-sensitive element formed in the second substrate, which needs to receive the higher photon of energy just, can occur electron transition to generate photoproduction
Carrier.In one embodiment of the invention, if forming the light-sensitive element of white pixel sensor in the second substrate, by
Only the higher photon of frequency could excite electron transition to generate photoproduction in the wider band gap width of the second substrate, white spectrum
Carrier, and the lower photon of frequency just can no longer be received to generate photo-generated carrier by white pixel sensor in white spectrum
?.In this way, the light-sensitive element of the element sensor of the second substrate only to receive white spectrum in a part of photon-sensitive, therefore with
Compared without using wide bandgap material as substrate, the meeting in the case where not reducing elemental area so that less electronics is excited,
To generate less photo-generated carrier.Since it can generate less photo-generated carrier, white can be reduced or even avoided
Element sensor is saturated too early and spills into adjacent pixel.
Although the too early saturation in order to solve the problems, such as white pixel sensor is referred in the present invention, for white pixel
Sensor uses wide bandgap material；But the present invention is not limited to use wide bandgap material only for white pixel sensor.At it
In his special photo environment, it can satisfy ahead of time compared to the element sensor of other colors in the element sensor of certain color
With in the case where, wide bandgap semiconductor materials can be used for the element sensor being saturated ahead of time.
Preferably, the first element sensor 301A is color pixel sensor, the second element sensor 301B
For white pixel sensor.In another embodiment of the present invention, wherein the first element sensor 301A and second picture
Plain sensor 301B is the element sensor for different colours.Note that for simplicity, only being shown in the sectional view
Three element sensors；However, in practical devices, it will thus provide thousands of or more or less element sensors
Array is generally positioned to be row and column.In addition, element sensor can not also be arranged according to sequence shown in Fig. 3.
Preferably, the light-sensitive element in element sensor may, for example, be photodiode.For example, photodiode can be with
Including in the corresponding first area (not shown) and substrate with the first doping type (for example, n-type doping) in substrate
Corresponding second with second doping type (for example, p-type doping) different from the first doping type above first area
Region (not shown).It preferably, further include corresponding amplifier, such as transistor in element sensor.
Preferably, substrate can also include other devices, including formed in another part of substrate active transistor,
The electrical connections such as diode, capacitor, resistor, memory cell, analog device, filter, transceiver, in the future
Reading electronic device is transferred to from the signal of light-sensitive element.Moreover, after forming imaging sensor of the present invention, encapsulation
Side on substrate can be set in material, to form complete micromodule, such as, integrated circuit, solar battery, processor
Deng.
Preferably, imaging sensor further includes grid 303, is arranged on the pixel sensor array 301 and has
Opening corresponding to the element sensor 301A-B in the pixel sensor array.Preferably, these openings concentrate on pixel
The center of sensor 301 is slightly displaced from.Grid 303 can be formed by any appropriate light-proof material, such as metal, including
But be not limited to tungsten, copper or aluminum bronze and dielectric, for example, oxide (such as, silica), nitride (such as, silicon nitride) with
And oxynitride (such as, silicon oxynitride) etc..
In the image sensor, the grid in element sensor area to the uniformity for improving each pixel region reception light and prevents
Optical crosstalk plays an important role.By opaqueness using grid or light absorption so that be incident on the light of colour filter by
The obstruction of grid between colour filter and cannot be introduced into adjacent color filter or element sensor, to prevent different pixels
Between light crosstalk.The thickness of grid is arranged to help to reduce optical crosstalk.
It in the image sensor, further include the color filter array 304 being contained in the opening of grid 303.Color filter array
For example including white filter 304B and color filter 304A, (color filter is for example including red color filter, green color
The Bayer template color filter of device and blue color filter, for example, can also as needed include other colour filter templates and
Color (for example, cyan, yellow, carmetta)), and color filter array can be with other any suitable arrangement sides as required
Formula arranges.Color filter array may include the material of coloring or dyeing, such as acrylic acid.For example, polymethyl methacrylate
(" PMMA ") or propylene glycol monostearate (" PGMS ") are suitable materials, can increase pigments or dyes using them to be formed
Colour filter.However, it is also possible to form colour filter using other materials.
Grid 303 is formed between adjacent color filter 304, to inhibit the transmission of the light between adjacent color filter.Do not having
In the case where grid, filter associated with an element sensor of image sensor array can be entered from extraneous light
Color device, and before reaching the light receiving surface of imaging sensor, it is also possible to it is incident on the colour filter adjacent with a upper colour filter
In device.The process will lead to the optical crosstalk between adjacent pixel sensor.In general, grid for inhibit this crosstalk with
Improved clear color degree and resolution ratio are provided.
Preferably, microlens array 305 is formed on color filter array 304.Microlens array 305 can be had by transparent
Machine material, inorganic compound material are made, and have convex upper surface.Microlens array 305 can concentrate on pixel sensing
The center of device is slightly displaced from.Microlens array 305 enables to be irradiated to this by the incident light of lenticule for focusing light
On element sensor corresponding to lens arrangement.
Fig. 5 shows a kind of flow chart for manufacturing element sensor shown in Fig. 3 according to the present invention.
In step S501, substrate is provided, substrate can be silicon substrate or other semiconductor materials.Substrate usually can be with
It is the wafer of semiconductor material.In other embodiments, substrate may be provided as epitaxial layer on insulator, such as
" SOI " layer.The wafer of semiconductor material can be engaged or be stacked, and substrate can be one of these layers.Substrate usually passes through
Wafer grinding method is thinned, such as, chemically mechanical polishing (" CMP "), machinery wafer grinding or semiconductor etching.Preferably, may be used
To form shallow-trench isolation STI in the substrate, to completely cut off in the substrate by each element sensor to be formed.
In step S502, processing (for example, etching) the first substrate is to form groove, such as passes through dry etching or wet
Method etching removes the part exposed by photomask and retains the part covered by photomask.
In step S503, the second substrate is formed on the first substrate, and the second substrate fills the groove, forms the second lining
The method at bottom can be with unrestricted choice according to the material properties of the second substrate, such as can form second by chemical vapor deposition
Substrate.
In step S504, the second substrate is chemically-mechanicapolish polished, to expose the first substrate, wherein the second substrate
It is formed in the groove of the first substrate.
In step S505, the first pixel sensor array is formed in the first substrate, forms second in the second substrate
Pixel sensor array.Preferably, pixel sensor array includes photodiode and photodiode depletion region.Formation side
Method is to be completed by carrying out the common process such as foreign ion injection and annealing process, and it is miscellaneous to be included in photodiode area progress
Matter ion implanting forms doped region, PN junction is constituted between doped region and semiconductor substrate, to form photodiode and photoelectricity two
Pole pipe depletion region.The forming method of photodiode and photodiode depletion region is well known to those skilled in the art, herein
It is not described further.The process and step that light-sensitive element (such as photodiode) is formed in broad-band gap substrate material are similar to one
As the process of light-sensitive element is formed in Si semiconductor material, therefore detailed description is not added herein.
Preferably, first element sensor is color pixel sensor, and second element sensor is white picture
Plain sensor.Preferably, the first element sensor and second element sensor are the element sensor for different colours.
It optionally, can be in other layers (not marking) such as pixel sensor array disposed thereon dielectric layer.
Optionally, in step S506, grid is formed above the pixel sensor array, the grid, which has, to be corresponded to
The opening of element sensor in the pixel sensor array.Preferably, grid film can be formed by sputtering technology, so
The photoresist with comb mesh pattern is formed in grid film afterwards, is etched later to form grid.
Optionally, in step s 507, color filter array is formed in the opening of grid, and a filter is formed in each opening
Color device.The color filter array is for example including white filter and color filter.
Optionally, in step S508, lenticule is formed above color filter array.
The invention discloses a kind of substrate of imaging sensor, the substrate includes the first substrate；And second substrate；Its
Described in the first substrate there is groove, second substrate is formed in the groove of first substrate, second lining
The band gap at bottom first substrate is wider.Preferably, the material of second substrate is selected from the group being made of following material
It selects: GaN, GaAs, α-Si, Si-C, InN, Inx-Ga1-xN.
The invention discloses a kind of imaging sensor, described image sensor includes pixel sensor array, the pixel
Sensor array includes multiple first element sensors and multiple second element sensors；First substrate, first pixel
Sensor arrangement is in first substrate；Second substrate, second element sensor are arranged in second substrate；Its
Described in the first substrate there is groove, second substrate is formed in the groove of first substrate, second lining
The band gap at bottom first substrate is wider.
Preferably, the material of second substrate is selected from the group being made of following material: GaN, GaAs, α-Si, Si-
C、InN、Inx-Ga1-xN。
Preferably, first element sensor is color pixel sensor, and second element sensor is white picture
Plain sensor.
Preferably, the first element sensor and second element sensor are the element sensor for different colours.
Preferably, imaging sensor further includes being arranged in first element sensor and second element sensor
The grid of top, the grid is at corresponding respectively to opening for first element sensor and second element sensor
Mouthful.
Preferably, imaging sensor further includes the colour filter of arrangement in said opening.
Preferably, it is coloured silk that imaging sensor, which further includes the colour filter being arranged in the opening corresponding to the first element sensor,
Color colour filter, the colour filter being arranged in the opening corresponding to the second element sensor are white filter.
The invention discloses a kind of methods of substrate for manufacturing imaging sensor, including provide the first substrate；Described in processing
First substrate is to form groove；And the second substrate is formed in the groove, the band gap of second substrate is compared with the first substrate
It is wider.
The invention discloses a kind of methods for manufacturing imaging sensor, including provide the first substrate；Process first lining
Bottom is to form groove；The second substrate is formed in the groove, forms the first element sensor in first substrate；And
The second element sensor is formed in second substrate, the band gap of second substrate is wider compared with the first substrate.
Preferably, the material of second substrate is selected from the group being made of following material: GaN, GaAs, α-Si, Si-
C、InN、Inx-Ga1-xN。
Preferably, first element sensor is color pixel sensor, and second element sensor is white picture
Plain sensor.
Preferably, first element sensor and second element sensor are the pixel sensing for different colours
Device.
Preferably, the method also includes the cloth above first element sensor and second element sensor
Grid is set, the grid is at the opening for corresponding respectively to first element sensor and second element sensor.
Preferably, the method also includes arranging colour filter in said opening.
Preferably, the colour filter being arranged in the opening corresponding to the first element sensor is color filter, is arranged in
It is white filter corresponding to the colour filter in the opening of the second element sensor.
The invention discloses a kind of electronic device, the electronic device includes described in any item imaging sensors as above.
The invention discloses a kind of methods for manufacturing electronic device, and the method includes using method as described above to make
Make imaging sensor.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description the show or other different other orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature and another element/node/feature in electricity
Above, it is directly connected (or direct communication) mechanically, in logic or in other ways.Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including benefit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, middle certain term of use can also be described below, and thus not anticipate just to the purpose of reference
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in various other embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of substrate of imaging sensor, it is characterised in that the substrate includes:
First substrate；And
Second substrate；
Wherein first substrate has groove, and second substrate is formed in the groove of first substrate, described
The band gap of second substrate first substrate is wider.
2. substrate according to claim 1, wherein the material of second substrate is selected from the group being made of following material
It selects: GaN, GaAs, α-Si, Si-C, InN, Inx-Ga1-xN.
3. a kind of imaging sensor, it is characterised in that described image sensor includes:
Pixel sensor array, the pixel sensor array include that multiple first element sensors and multiple second pixels pass
Sensor；
First substrate, first element sensor are arranged in first substrate；
Second substrate, second element sensor are arranged in second substrate；
Wherein first substrate has groove, and second substrate is formed in the groove of first substrate, described
The band gap of second substrate first substrate is wider.
4. imaging sensor according to claim 3, wherein the material of second substrate following material from being made of
It is selected in group: GaN, GaAs, α-Si, Si-C, InN, Inx-Ga1-xN.
5. imaging sensor according to claim 3, wherein first element sensor is color pixel sensor, institute
Stating the second element sensor is white pixel sensor.
6. imaging sensor according to claim 3, wherein the first element sensor is with second element sensor
For the element sensor of different colours.
7. imaging sensor according to claim 3, including it is arranged in first element sensor and described second
Grid above element sensor, the grid are passed at first element sensor and second pixel is corresponded respectively to
The opening of sensor.
8. imaging sensor according to claim 7 further includes the colour filter of arrangement in said opening.
9. imaging sensor according to claim 8, wherein being arranged in the opening corresponding to the first element sensor
Colour filter is color filter, and the colour filter being arranged in the opening corresponding to the second element sensor is white filter.
10. a kind of method for the substrate for manufacturing imaging sensor, comprising:
First substrate is provided；
First substrate is processed to form groove；And
The second substrate is formed in the groove,
The band gap of second substrate is wider compared with the first substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810905272.4A CN109087926A (en) | 2018-08-10 | 2018-08-10 | Imaging sensor, electronic device and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810905272.4A CN109087926A (en) | 2018-08-10 | 2018-08-10 | Imaging sensor, electronic device and its manufacturing method |
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| WO2021062662A1 (en) * | 2019-09-30 | 2021-04-08 | Oppo广东移动通信有限公司 | Image sensor, camera assembly, and mobile terminal |
| WO2021062661A1 (en) * | 2019-09-30 | 2021-04-08 | Oppo广东移动通信有限公司 | Image sensor, camera assembly, and mobile terminal |
| WO2021062663A1 (en) * | 2019-09-30 | 2021-04-08 | Oppo广东移动通信有限公司 | Image sensor, camera assembly and mobile terminal |
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| US20090321786A1 (en) * | 2008-06-26 | 2009-12-31 | International Business Machines Corporation | Band Gap Modulated Optical Sensor |
| US20160161599A1 (en) * | 2014-12-03 | 2016-06-09 | Melexis Technologies Nv | Semiconductor pixel unit for sensing near-infrared light, optionally simultaneously with visible light, and a semiconductor sensor comprising same |
| CN106229324A (en) * | 2016-09-14 | 2016-12-14 | 豪威科技(上海)有限公司 | Imageing sensor and preparation method thereof |
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| US20090321786A1 (en) * | 2008-06-26 | 2009-12-31 | International Business Machines Corporation | Band Gap Modulated Optical Sensor |
| US20160161599A1 (en) * | 2014-12-03 | 2016-06-09 | Melexis Technologies Nv | Semiconductor pixel unit for sensing near-infrared light, optionally simultaneously with visible light, and a semiconductor sensor comprising same |
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Application publication date: 20181225 |