CN109256455A - A kind of light efficiency extraction and the true color Micro-LED without pixel interference show structure and its manufacturing method - Google Patents
A kind of light efficiency extraction and the true color Micro-LED without pixel interference show structure and its manufacturing method Download PDFInfo
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
It is extracted the present invention relates to a kind of light efficiency and the true color Micro-LED without pixel interference shows structure and its manufacturing method, including the LED chip array for being set to a substrate surface and being arranged in array, be set to a transparent substrate upper and lower surface microlens array and with its one-to-one inversed trapezoid micro-structure array, and the envelope framework of connection substrate and transparent substrate, inversed trapezoid micro-structure array successively constitute the R unit for showing feux rouges, the G unit for showing green light along the transverse direction of LED chip and for showing blue light unit B.The present invention is converted to red/green using the green quantum dot layer in red/G unit in blue LED die excitation R unit；Simultaneously, utilize the Distributed Bragg Reflection layer in micro-structure, it improves Micro-LED and shows light extraction efficiency, also using in micro-structure reflecting layer and microlens array improve the light extraction efficiency of vertical direction and prevent adjacent pixel color from interfering, to realize that a kind of light efficiency extracts and the true color Micro-LED without pixel interference is shown.
Description
Technical field
The present invention relates to semiconductor display field, especially a kind of light efficiency extracts and the true color Micro- without pixel interference
LED shows structure and its manufacturing method.
Background technique
It is micron order spacing LED array will to be formed after traditional LED miniatureization to reach ultra high density picture that Micro-LED, which is shown,
Plain resolution ratio.Micro-LED shows the characteristic having from main light emission, shows compared to OLED and LCD, and Micro-LED shows color
More easily accurately debugging, there is longer luminescent lifetime and higher brightness, while more frivolous and savings advantage.Due to its height
The characteristics of density small size super more pixels, Micro-LED, which is shown, will become with high validity, and interaction and Indivitual display are main
The leader of the third generation display technology of feature.
Currently, Micro-LED colorization is shown generally by Metallo-Organic Chemical Vapor deposition (MOCVD) at GaN base bottom
Upper carry out epitaxial growth, then shape in drive circuit substrate is connected to by modes such as chip welding, chip welding or film transfers
At display pixel.In colorization technical aspect, by color conversion method, RGB three-color process, optical prism synthetic method and can lead to
Cross the realization of the methods of control LED structure and sized launches different wavelengths of light.Wherein, realize that color conversion is considered using quantum dot
It is most potential one of the method for Micro-LED colorization.However, realizing that colorization technical problem is blue light using quantum dot
LED chip excites the color conversion of quantum dot light emitting and light efficiency extraction efficiency low, and in order to improve efficiency, conventional method is by quantum dot
The thickness setting of luminescent layer is very thick, could fully absorb the blue light for being used to excite, which will limit Micro-LED and show picture
Element further reduces, it will increases element manufacturing cost and device integral thickness.Meanwhile quantum dot realizes color conversion
Afterwards, adjacent pixel goes out the easy crosstalk of light, influences colorization Micro-LED image quality.
In prior art processes, realize Micro-LED true color shows it is a kind of common technique using technology of quantum dots
Optimization means, and technology and preparation method are also relatively more at present.Chinese patent CN106356386A is in blue Micro-
LED chip filling red quantum dot and green quantum dot element realize true color and show, but color is easy to alter between pixel
It disturbs；In addition, directly coating quantum dot in chip surface, technique is unstable, causes device performance bad, while quantum dot is graphical
It should not control, cause element manufacturing at high cost；A kind of achievable light efficiency of Chinese patent CN108257949A extracts and color turns
Change micron order LED display, be exactly in the micron-scale blue LED die table preparation inverted trapezoidal reservoir, in inverted trapezoidal reservoir
Micro-structure is sequentially filled red and green quantum dot, and it is mono- successively to constitute R unit, G unit and B along the transverse direction of LED chip
Member is realized that Micro-LED true color is shown, while being improved the light extraction efficiency of device using micro structure array.But this method
Micro-structure directly prepares the surface of LED chip in the micron-scale, and complex manufacturing process seriously affects device performance and cost of manufacture；
Meanwhile quantum dot light emitting layer is easy exposed to weather, and in air under water oxygen effect, device lifetime degradation；In addition, device
The direction of the vertical light in part surface is unable to control, and crosstalk seriously occurs.
Summary of the invention
In view of this, being extracted the purpose of the present invention is to propose to a kind of light efficiency and true color Micro-LED without pixel interference
Structure and its manufacturing method are shown, not only using the green quantum in red/G unit in blue LED die excitation R unit
It puts layer and is converted to red/green；Meanwhile red/green is penetrated from top using inversed trapezoid micro-structure, unabsorbed indigo plant
Light reflects and excites quantum dot light emitting layer again, improves Micro-LED and shows light extraction efficiency, also using reflecting layer and micro-
Lens array improves the light extraction efficiency of vertical direction and prevents adjacent pixel color from interfering, to realize that a kind of light efficiency extracts and without picture
The true color Micro-LED of element interference is shown.
The present invention is realized using following scheme: a kind of light efficiency extraction and the true color Micro-LED without pixel interference are shown
Structure including substrate, transparent substrate, the LED chip array for being set to the substrate surface and being arranged in array, is respectively arranged at
The microlens array on upper and lower two surface of transparent substrate and inversed trapezoid micro-structure array and it connect the substrate and transparent
The envelope framework of substrate；Each LED chip in each inversed trapezoid micro-structure and LED chip array in inversed trapezoid micro-structure array
It is aligned and is packaged together one by one；Each lenticule and each inversed trapezoid micro-structure in microlens array correspond；
The inversed trapezoid micro-structure array is made of several inversed trapezoid micro-structures, the inversed trapezoid micro-structure and LED core
Piece successively constitutes the R unit for showing feux rouges, the G unit for showing green light along the transverse direction of LED chip and is used for
Show blue light unit B；Wherein, Distributed Bragg Reflection layer, peripheral side setting are provided at the top of the inversed trapezoid micro-structure of R unit
There is reflecting layer, inside is filled with red quantum dot layer；Distributed Bragg Reflection is provided at the top of the inversed trapezoid micro-structure of G unit
Layer, filled with green quantum dot layer, peripheral side is provided with reflecting layer for inside；It is provided at the top of the inversed trapezoid micro-structure of unit B point
Cloth Bragg reflecting layer, peripheral side are provided with reflecting layer.
Further, the LED chip array is made of several blue Micro-LED chips, each blue Micro-
LED core leaf length is 1 micron to 50 microns, and width is 1 micron to 50 microns；The horizontal spacing of adjacent Micro-LED chip is big
In Micro-LED chip length, longitudinal pitch is greater than LED chip width, and horizontal spacing/longitudinal pitch is less than 100 microns；Institute
Blue light can be issued by stating blue Micro-LED chip, and the blue light that the blue Micro-LED chip issues is through the red quantum
It puts layer or green quantum dot layer and is converted to feux rouges or green light, realize that coloration Micro-LED is shown.
Further, the bottom opening length of the inversed trapezoid micro-structure is less than or equal to LED core leaf length, the ladder
The bottom opening width of shape micro-structure is less than or equal to LED chip width；The top length of the inversed trapezoid micro-structure be greater than or
Equal to LED core leaf length, and it is less than or equal to the horizontal spacing of adjacent LED chip；The top width of the inversed trapezoid micro-structure
More than or equal to the width of LED chip, and it is less than or equal to the longitudinal pitch of adjacent LED chip, the inversed trapezoid micro-structure
Depth is 1 micron to 10 microns.
Further, the red quantum dot layer is mixed using II-VI race or III-V race's material, and thickness is less than
Or the depth equal to the inversed trapezoid micro-structure；It is described green quantum dot layer using II-VI race or III-V race's material mixing and
At thickness is less than or equal to the depth of the inversed trapezoid micro-structure.
Further, the Distributed Bragg Reflection layer is stacked by the double-layer films with high refractive index and low-refraction
Form, each layer film thickness byIt determines, and overall thickness is by R unit or heap the iterated logarithm m and B of G unit film
The heap iterated logarithm t of unit film determines that wherein m > t, n are film refractive index, d is film thickness, and θ is angle of light, and λ is
Central wavelength, q are constant, q >=0, and when q is positive odd number, and reflectivity has an extreme value, and m, t are positive integer or are equal to N+0.5, N
For positive integer；
By the heap iterated logarithm t of the Distributed Bragg Reflection layer in control unit B, send out blue Micro-LED chip
Blue light components transmission out；By the heap iterated logarithm m of the Distributed Bragg Reflection layer in control R unit or G unit, make blue
The feux rouges or green light that the blue light that Micro-LED chip issues excites the red quantum dot layer or green quantum dot layer to issue are from top
Portion penetrates, and unabsorbed blu-ray reflection rewindes and excites the red quantum dot layer or green quantum in trapezoid micro-structure again
Point luminescent layer, enhances the outgoing intensity of feux rouges or green light, to improve the luminous efficiency that Micro-LED is shown.
Further, the high-reflectivity metal material that the reflecting layer uses with a thickness of 20 nanometers to 1 micron, passes through adjusting
The material in reflecting layer controls the reflection of light with thickness, improves the outgoing of vertical direction light and prevents adjacent pixel from going out the dry of light
It disturbs.
Further, the microlens array is made of several transparent rectangular convex lenses；The rectangular convex lens
Length is consistent with the inversed trapezoid micro-structure top length, the width of square-lens and the trapezoid micro-structure top width one
It causes, the radius of curvature of square-lens is greater than the depth of the trapezoid micro-structure.
Further, the envelope framework is transparent material, is coated in through printing or inkjet printing and is provided with array arrangement LED
The substrate surrounding of chip seals 1-3 times with a thickness of the sum of inversed trapezoid micro-structure depth and chip thickness of framework.
The present invention also provides a kind of coloration Micro-LED based on light efficiency extraction described above and without pixel interference
Show the manufacturing method of structure, specifically includes the following steps:
Step S1: providing a blue Micro-LED chip array, and blue Micro-LED chip is arranged in array setting
In substrate surface；
Step S2: in production inversed trapezoid micro-structure；
Step S3: it is prepared using printing or inkjet printing technology on another surface of transparent substrate of not inversed trapezoid micro-structure
Transparent square microlens array；The length of the rectangular convex lens is consistent with the inversed trapezoid micro-structure top length, rectangular
The width of lens is consistent with the trapezoid micro-structure top width, and the radius of curvature of square-lens is greater than the trapezoid micro-structure
Depth；
Step S4: one layer is coated in the substrate surrounding of setting array arrangement LED chip using printing or inkjet printing technology
Transparent envelope framework seals 1-3 times with a thickness of the sum of trapezoid micro-structure depth and chip thickness of framework；
Step S5: bottom centre's point of the LED chip central point and the inversed trapezoid micro-structure is aligned one by one, exhaust
Encapsulation.
Further, step S2 specifically includes the following steps:
Step S21: providing a transparent substrate, coats a protective layer on transparent substrate surface, is added using photoetching, laser
Work, inkjet printing and sandblast technology are graphical by protective layer production and are in the trapezoidal reservoir of array distribution；It is described trapezoidal
Reservoir is transversely successively arranged successively by R/G/B sequence, and the top opening length of the trapezoidal reservoir is less than or equal to LED
The top opening width of chip length, the trapezoidal reservoir is less than or equal to LED chip width；The bottom of the trapezoidal reservoir
Minister's degree be greater than or equal to LED core leaf length, and be less than or equal to adjacent LED chip chamber away from；The bottom of the trapezoidal reservoir
Width is greater than or equal to the width of LED chip, and is less than or equal to adjacent LED chip chamber away from the depth of the trapezoidal reservoir
It is 1 micron to 10 microns；
Step S22: using the method for physical vapor or chemical vapor deposition in the R unit, the ladder of G unit and unit B
Shape reservoir lower surface is coated with Distributed Bragg Reflection layer, by the heap iterated logarithm m and t that adjust Distributed Bragg Reflection layer
To control the wavelength of emergent light and the wavelength of reflected light；
Step S23: filling red quantum dot in the inverted trapezoidal reservoir R unit using inkjet printing technology, is formed
Red quantum dot luminescent layer, the quantum dot thickness are less than or equal to the depth of the trapezoidal reservoir；
Step S24: green quantum dot is filled in the trapezoidal reservoir G unit using inkjet printing technology, is formed green
Color quantum dot light emitting layer, the quantum dot thickness are less than or equal to the depth of the trapezoidal reservoir；
Step S25: the protective layer of trapezoidal reservoir surrounding is removed；
Step S26: it is plated using the method for physical vapor or chemical vapor deposition in the inversed trapezoid micro-structure peripheral side
One layer of reflecting layer forms the R unit, G unit and unit B；The reflecting layer is with a thickness of 20 nanometers to 1 micron high reflectances
Metal material controls the reflection of light by adjusting reflector material and thickness, improves the outgoing of vertical direction light and prevents phase
Adjacent pixel goes out the interference of light.
Compared with prior art, the invention has the following beneficial effects:
1, the present invention can be turned using the green quantum dot layer in red/G unit in blue LED die excitation R unit
It is changed to red/green, realizes that true color Micro-LED is shown.
2, the present invention makes different-thickness Distributed Bragg Reflection layer using quantum dot light emitting layer upper surface, can make blue
The light (feux rouges or green light) that LED excites quantum dot light emitting layer to issue is penetrated from top, and unabsorbed blu-ray reflection returns liquid storage
Quantum dot light emitting layer, the light extraction efficiency that enhancing Micro-LED is shown are excited in slot again.
3, the present invention prevents also using the light extraction efficiency in reflecting layer and microlens array raising vertical direction in micro-structure
The only color interference of adjacent pixel realizes that a kind of light efficiency extracts and the true color Micro-LED without pixel interference is shown, to quantum
Point above has great importance in Micro-LED in full-color display application.
4, quantum dot is set in inversed trapezoid micro-structure by the present invention, and exhaust encapsulation is directed at LED chip, reduces oxygen
Influence with moisture to quantum dot improves the service life that Micro-LED is shown.
Detailed description of the invention
Fig. 1 is that the light efficiency of the embodiment of the present invention extracts and the true color Micro-LED without pixel interference shows structural representation
Figure.
Fig. 2 is the structure system that a kind of light efficiency extraction and the true color Micro-LED without pixel interference are shown in the present embodiment
Make schematic diagram.
Fig. 3 is the schematic cross-section of blue Micro-LED chip in the present embodiment.
Fig. 4 is the manufacture schematic diagram of trapezoid micro-structure in the present embodiment.
The manufacture schematic diagram of trapezoid micro-structure in Fig. 5 the present embodiment.
Fig. 6 is to print the structural schematic diagram of envelope framework in substrate surrounding in the present embodiment.
Fig. 7 is to prepare the structural schematic diagram of microlens array on trapezoid micro-structure opposite in the present embodiment.
Fig. 8 is the structural schematic diagram of transparent substrate and substrate alignment package in the present embodiment.
In figure, 10 be substrate, and 11 be blue Micro-LED chip, and 12 be transparent substrate, and 121 be protective layer, 122/123/
124 be trapezoidal reservoir, and 13 be R unit, and 14 be G unit, and 15 be unit B, and 132/142/152 is Distributed Bragg Reflection
Layer, 133 be reflecting layer, and 131 be red quantum dot luminescent layer, and 141 be green quantum dot light emitting layer, and 16 be lenticule, and 17 be envelope
Framework.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and embodiments.
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, specific embodiment and phase will be passed through below
Attached drawing is closed, invention is further described in detail.In the figure for clarity, being exaggerated the thickness in layer and region, but as showing
It is intended to should not be considered as strictly reflecting the proportionate relationship of geometric dimension.Here, being that idealization of the invention is implemented with reference to figure
It illustrating and is intended to, the embodiment of the present invention should not be considered limited to the specific shape in region shown in figure, but including institute
Obtained shape, for example manufacture caused deviation.Indicate that the expression in figure is schematic in the present embodiment with rectangle or circle
, but this should not be considered as limiting the scope of the invention.There is the size of barrier fluctuating pattern with the period that rises and falls in the present embodiment
A certain range can design fluctuating pattern magnitude according to actual needs in actual production and its rise and fall the period, rise in embodiment
The numerical value for lying prostrate the period is signal value, but this should not be considered as limiting the scope of the invention.
As shown in Figure 1, present embodiments providing, a kind of light efficiency is extracted and the true color Micro-LED without pixel interference is shown
Structure including substrate 10, transparent substrate 12, the LED chip array 11 for being set to 10 surface of substrate and being arranged in array, is divided
It is not set to the microlens array 16 on upper and lower two surface of the transparent substrate and inversed trapezoid micro-structure array and described in connecting
The envelope framework 17 of substrate and transparent substrate；In each inversed trapezoid micro-structure and LED chip array in inversed trapezoid micro-structure array
Each LED chip be aligned and be packaged together one by one；Each lenticule and each inversed trapezoid micro-structure in microlens array
It corresponds；
The inversed trapezoid micro-structure array is made of several inversed trapezoid micro-structures, the inversed trapezoid micro-structure and LED core
Piece successively constituted along the transverse direction of LED chip the R unit 13 for showing feux rouges, the G unit 14 for showing green light and
For showing blue light unit B 15；Wherein, it is provided with Distributed Bragg Reflection layer 132 at the top of the inversed trapezoid micro-structure of R unit,
Peripheral side is provided with reflecting layer 133, and inside is filled with red quantum dot layer 131；It is provided at the top of the inversed trapezoid micro-structure of G unit
Distributed Bragg Reflection layer 142, filled with green quantum dot layer 141, peripheral side is provided with reflecting layer 133 for inside；Unit B
It is provided with Distributed Bragg Reflection layer 152 at the top of inversed trapezoid micro-structure, peripheral side is provided with reflecting layer 133.
In the present embodiment, the LED chip array is made of several blue Micro-LED chips, each blue
Micro-LED chip length is 1 micron to 50 microns, and width is 1 micron to 50 microns；The transverse direction of adjacent Micro-LED chip
Spacing is greater than Micro-LED chip length, and longitudinal pitch is greater than LED chip width, and horizontal spacing/longitudinal pitch is less than 100
Micron；The blue Micro-LED chip can issue blue light, described in the blue light warp that the blue Micro-LED chip issues
Red quantum dot layer or green quantum dot layer and be converted to feux rouges or green light, realize that coloration Micro-LED is shown.
In the present embodiment, the bottom opening length of the inversed trapezoid micro-structure is less than or equal to LED core leaf length, described
The bottom opening width of inversed trapezoid micro-structure is less than or equal to LED chip width；The top length of the inversed trapezoid micro-structure is big
In or be equal to LED core leaf length, and be less than or equal to adjacent LED chip horizontal spacing；The top of the inversed trapezoid micro-structure
Width is greater than or equal to the width of LED chip, and is less than or equal to the longitudinal pitch of adjacent LED chip, the micro- knot of inverted trapezoidal
The depth of structure is 1 micron to 10 microns.
In the present embodiment, the red quantum dot layer is mixed using II-VI race or III-V race's material, thickness
Less than or equal to the depth of the inversed trapezoid micro-structure；The green quantum dot layer is mixed using II-VI race or III-V race's material
It forms, thickness is less than or equal to the depth of the inversed trapezoid micro-structure.
In the present embodiment, the Distributed Bragg Reflection layer is by the double-layer films with high refractive index and low-refraction
Stack, each layer film thickness byIt determines, and overall thickness is by R unit or the heap iterated logarithm m of G unit film
It is determined with the heap iterated logarithm t of unit B film, wherein m > t, n are film refractive index, and d is film thickness, and θ is angle of light, λ
For center wavelength, q is constant, q >=0, and when q is positive odd number, and reflectivity has an extreme value, and m, t are positive integer or are equal to N+
0.5, N is positive integer；
By the heap iterated logarithm t of the Distributed Bragg Reflection layer in control unit B, send out blue Micro-LED chip
Blue light components transmission out；By the heap iterated logarithm m of the Distributed Bragg Reflection layer in control R unit or G unit, make blue
The feux rouges or green light that the blue light that Micro-LED chip issues excites the red quantum dot layer or green quantum dot layer to issue are from top
Portion penetrates, and unabsorbed blu-ray reflection rewindes and excites the red quantum dot layer or green quantum in trapezoid micro-structure again
Point luminescent layer, enhances the outgoing intensity of feux rouges or green light, to improve the luminous efficiency that Micro-LED is shown.
In the present embodiment, the high-reflectivity metal material that the reflecting layer uses with a thickness of 20 nanometers to 1 micron, passes through
Material and the thickness in reflecting layer are adjusted controlling the reflection of light, improving the outgoing of vertical direction light and preventing adjacent pixel from going out light
Interference.
In the present embodiment, the microlens array is made of several transparent rectangular convex lenses；The rectangular convex lens
The length of mirror is consistent with the inversed trapezoid micro-structure top length, the width of square-lens and the trapezoid micro-structure top width
Unanimously, the radius of curvature of square-lens is greater than the depth of the trapezoid micro-structure.
In the present embodiment, the envelope framework is transparent material, is coated in through printing or inkjet printing and is provided with array row
The substrate surrounding of cloth LED chip seals 1-3 times with a thickness of the sum of inversed trapezoid micro-structure depth and chip thickness of framework.
As shown in Fig. 2, the present embodiment additionally provides a kind of extract based on light efficiency described above and without the complete of pixel interference
Coloured silkization Micro-LED shows the manufacturing method of structure, specifically includes the following steps:
Step S1: a blue Micro-LED chip 11 is provided on 10 surface of substrate.The LED chip 11 is transversely and vertical
It is set to 10 surface of substrate to evenly distributed, LED core leaf length is 1 micron to 50 microns, and LED chip width is 1 micron to 50
Micron, adjacent LED chip horizontal spacing are greater than LED core leaf length, and longitudinal pitch is greater than LED chip width, and horizontal spacing/vertical
To spacing less than 100 microns.The present embodiment preferably blue Micro-LED chip length and width are 30 microns, laterally and vertical
It is 80 microns to adjacent spacing, as shown in Figure 3；
Step S2: in production inversed trapezoid micro-structure；Its production process is as shown in figure 4, manufacturing process is as shown in Figure 5.
Step S3: one layer is coated in the substrate surrounding of setting array arrangement LED chip using printing or inkjet printing technology
Transparent envelope framework seals 1-3 times with a thickness of the sum of trapezoid micro-structure depth and chip thickness of framework.The present embodiment preferably prints
It is the transparent envelope framework 17 of 10um that brush technology, which coats a layer thickness in 10 surrounding of substrate of setting array arrangement LED chip 11, such as
Shown in Fig. 6；
Step S4: using printing or inkjet printing technology 120 surface of transparent substrate (not no trapezoid micro-structure that
Face) prepare transparent square microlens.The length of the rectangular convex lens is consistent with the trapezoid micro-structure top length, rectangular
The width of lens is consistent with the trapezoid micro-structure top width, and the radius of curvature of square-lens is greater than or equal to described trapezoidal micro-
The depth of structure.The preferred inkjet printing technology preparation length and width of the present embodiment is all 80um, and radius of curvature is the transparent of 1mm
Direction lenticule, as shown in Figure 7；
Step S5: bottom centre's point of the LED chip central point and the trapezoid micro-structure is aligned one by one, exhaust envelope
Dress is formed as a kind of light efficiency of Fig. 8 extracts and the coloration Micro-LED display device without pixel interference.
In the present embodiment, step S2 specifically includes the following steps:
Step S21: provide a transparent substrate 12,12 surface of transparent substrate coat a protective layer 121, using photoetching,
The protective layer 121 is made inverted trapezoidal liquid storage that is graphical and being in array distribution by laser processing, inkjet printing and sandblast technology
Slot 122/123/124, and the inverted trapezoidal reservoir is transversely successively arranged successively by R/G/B sequence；The trapezoidal reservoir
Top opening length be less than or equal to LED core leaf length, the top opening width of the trapezoidal reservoir is less than or equal to LED
Chip-wide；The bottom lengths of the trapezoidal reservoir are greater than or equal to LED core leaf length, are less than or equal to adjacent LED chip
Spacing, the bottom width of the trapezoidal reservoir are greater than or equal to the width of LED chip, are less than or equal to adjacent LED chip chamber
Away from the depth of the trapezoidal reservoir is 1 micron to 10 microns.The preferred photoetching process of the present embodiment forms the ladder such as (a) in Fig. 5
Shape reservoir, wherein each trapezoidal reservoir bottom lengths and width are 80 microns, each reservoir top length and width
It is 50 microns, top length and width are all 80 microns, and depth is 5 microns；
Step S22: it is coated with point using the method for physical vapor or chemical vapor deposition in trapezoidal 122 bottom of reservoir
Cloth Bragg reflecting layer 132 is controlled out by the thickness of the high low refractive index film of adjusting Distributed Bragg Reflection layer
Penetrate the wavelength of light and the wavelength of reflected light.The Distributed Bragg Reflection layer 132 is thin by two kinds with high low-refraction
Membrane stack forms, and described two film combinations include but is not limited to: TiO2/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/
SiO2, the former is high refractive index film, and the latter is low refractive index film.Each layer film thickness of Distributed Bragg Reflection layer
ByIt determines, and overall thickness is determined by the heap iterated logarithm m of film, wherein n is film refractive index, and d is that film is thick
Degree, θ are angle of light, and λ is center wavelength, and q is constant, q >=0, and when q is positive odd number, reflectivity has extreme value, and m can be
Positive integer, is also possible to N+0.5, and N is positive integer.The preferred ALD technique of the present embodiment is coated in trapezoidal 122 lower surface of reservoir
The TiO of 4.5 circulations2/Al2O3Distributed Bragg Reflection layer, wherein TiO2With a thickness of 45nm, Al2O3 with a thickness of 67nm,
As shown in Fig. 5 (b).The TiO of 4.5 circulations2/Al2O3The Distributed Bragg Reflection layer of laminated construction composition can make blue led
The light for exciting the red quantum dot luminescent layer to issue is penetrated from top, and unabsorbed blu-ray reflection returns in reservoir again
Red quantum dot luminescent layer is excited, the intensity of emergent light is enhanced, so that improving Micro-LED shows light extraction efficiency；
Step S23: it is coated with point using the method for physical vapor or chemical vapor deposition in trapezoidal 123 bottom of reservoir
Cloth Bragg reflecting layer 142 is controlled out by the thickness of the high low refractive index film of adjusting Distributed Bragg Reflection layer
Penetrate the wavelength of light and the wavelength of reflected light.The Distributed Bragg Reflection 142 is by two kinds of films with high low-refraction
It stacks, described two film combinations include but is not limited to: TiO2/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2,
The former is high refractive index film, and the latter is low refractive index film.Each layer film thickness of Distributed Bragg Reflection layer byIt determines, and overall thickness is determined by the heap iterated logarithm m of film, wherein n is film refractive index, and d is film thickness,
θ is angle of light, and λ is center wavelength, and q is constant, q >=0, and when q is positive odd number, reflectivity has extreme value, and m can be just whole
Number, is also possible to N+0.5, N is positive integer.The preferred ALD technique of the present embodiment is coated with 2.5 in trapezoidal 123 lower surface of reservoir
The TiO of circulation2/Al2O3Distributed Bragg Reflection layer, wherein TiO2With a thickness of 45nm, Al2O3With a thickness of 67nm, such as Fig. 5
(b) shown in.The TiO of 2.5 circulations2/Al2O3The Distributed Bragg Reflection layer of laminated construction composition can make blue led excite institute
It states the light that green quantum dot light emitting layer issues to penetrate from top, and is excited again in unabsorbed blu-ray reflection time reservoir green
Color quantum dot light emitting layer, enhances the intensity of emergent light, so that improving Micro-LED shows light extraction efficiency；
Step S24: it is coated with point using the method for physical vapor or chemical vapor deposition in trapezoidal 124 bottom of reservoir
Cloth Bragg reflecting layer 152, the thickness of the high low refractive index film by controlling the Distributed Bragg Reflection layer 152,
The transmissivity of adjustable unit B blue light is between 30%-80%.Preferably trapezoidal 124 lower surface of reservoir of the present embodiment is coated with
Plate the TiO2/Al2O3 of 1.5 stackings, wherein TiO2 is with a thickness of 45nm, Al2O3 with a thickness of 67nm, as shown in Fig. 5 (b).1.5
The Distributed Bragg Reflection layer of the TiO2/Al2O3 laminated construction composition of a stacking can make the transmissivity for adjusting unit B blue light exist
60%；
Step S25: it in the trapezoidal reservoir 122 of deposition Bragg reflecting layer 132, is filled using inkjet printing technology red
Color quantum dot light emitting layer 131.The thickness of the quantum dot light emitting layer 131 is less than or equal to the depth of trapezoidal reservoir 122.This reality
It applies example preferred InkJet printing processes red quantum dot is printed upon in trapezoidal reservoir 122, quantum dot is placed with a thickness of 5 microns
It is heated 20 minutes on 40 DEG C of warm table, solidifies printed quantum dot, as shown in Fig. 5 (c)；
Step S26: it in the trapezoidal reservoir 123 of deposition Bragg reflecting layer 142, is filled using inkjet printing technology green
Color quantum dot light emitting layer 141.The thickness of the quantum dot light emitting layer 141 is less than or equal to the depth of trapezoidal reservoir 123.This reality
It applies the preferred InkJet printing processes of example green quantum dot is printed upon in trapezoidal reservoir 123, quantum dot is placed with a thickness of 5 microns
It is heated 20 minutes on 40 DEG C of warm table, solidifies printed quantum dot, as shown in Fig. 5 (d)；
Step S27: using physical vapor or the method for chemical vapor deposition, in conjunction with photoetching and lift-off technology above-mentioned trapezoidal
The outer surrounding of micro-structure plates one layer of reflecting layer 133, the light edge that blue led can be excited quantum dot to be issued by the reflecting layer 133
Trapezium structure inner reflection, increases the exit dose of vertical light, while reducing harassing for adjacent emergent light；The reflecting layer 133 is
The metal material of silver, aluminium or other high reflectances, with a thickness of 20 nanometers to 1 micron.The preferred photoetching of the present embodiment, vapor deposition and stripping
Separating process is used as reflecting layer 133, specific process step such as Fig. 5 for Ag layers of metal of four side evaporation thickness 80nm outside trapezium structure
(e) shown in；
Step S28: removing the protective layer of trapezoidal reservoir surrounding, R unit 13, G unit 14 and unit B 15 is formed, such as Fig. 5
(f) shown in.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, is all covered by the present invention.
Claims (10)
1. a kind of light efficiency extracts and the true color Micro-LED without pixel interference shows structure, it is characterised in that: including substrate,
Transparent substrate, is respectively arranged at the transparent substrate at the LED chip array for being set to the substrate surface and being arranged in array
The microlens array on upper and lower two surface is with inversed trapezoid micro-structure array and connect the envelope framework of the substrate and transparent substrate；
Each inversed trapezoid micro-structure in inversed trapezoid micro-structure array is aligned and seals one by one with each LED chip in LED chip array
It is fitted together；Each lenticule and each inversed trapezoid micro-structure in microlens array correspond；
The inversed trapezoid micro-structure array is made of several inversed trapezoid micro-structures, the inversed trapezoid micro-structure and LED chip edge
The transverse direction of LED chip successively constitutes the R unit for showing feux rouges, the G unit for showing green light and for showing
Blue light unit B；Wherein, it is provided with Distributed Bragg Reflection layer at the top of the inversed trapezoid micro-structure of R unit, peripheral side is provided with instead
Layer is penetrated, inside is filled with red quantum dot layer；It is provided with Distributed Bragg Reflection layer at the top of the inversed trapezoid micro-structure of G unit,
Filled with green quantum dot layer, peripheral side is provided with reflecting layer for inside；Distribution is provided at the top of the inversed trapezoid micro-structure of unit B
Bragg reflecting layer, peripheral side are provided with reflecting layer.
2. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
Be characterized in that: the LED chip array is made of several blue Micro-LED chips, and each blue Micro-LED chip is long
Degree is 1 micron to 50 microns, and width is 1 micron to 50 microns；The horizontal spacing of adjacent Micro-LED chip is greater than Micro-
LED core leaf length, longitudinal pitch is greater than LED chip width, and horizontal spacing/longitudinal pitch is less than 100 microns；The blue
Micro-LED chip can issue blue light, the blue light that the blue Micro-LED chip issues through the red quantum dot layer or
Green quantum dot layer and be converted to feux rouges or green light, realize that coloration Micro-LED is shown.
3. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
Be characterized in that: the bottom opening length of the inversed trapezoid micro-structure is less than or equal to LED core leaf length, the inversed trapezoid micro-structure
Bottom opening width be less than or equal to LED chip width；The top length of the inversed trapezoid micro-structure is greater than or equal to LED core
Leaf length, and it is less than or equal to the horizontal spacing of adjacent LED chip；The top width of the inversed trapezoid micro-structure is greater than or equal to
The width of LED chip, and it is less than or equal to the longitudinal pitch of adjacent LED chip, the depth of the inversed trapezoid micro-structure is 1 micron
To 10 microns.
4. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
Be characterized in that: the red quantum dot layer is mixed using II-VI race or III-V race's material, and thickness is less than or equal to institute
State the depth of inversed trapezoid micro-structure；The green quantum dot layer is mixed using II-VI race or III-V race's material, thickness
Less than or equal to the depth of the inversed trapezoid micro-structure.
5. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
Be characterized in that: the Distributed Bragg Reflection layer is stacked by the double-layer films with high refractive index and low-refraction, respectively
Layer film thickness byIt determines, and overall thickness is thin by the heap iterated logarithm m and unit B of R unit or G unit film
The heap iterated logarithm t of film determines that wherein m > t, n are film refractive index, and d is film thickness, and θ is angle of light, and λ is center wave
Long, q is constant, q >=0, and when q is positive odd number, reflectivity has extreme value, and m, t are positive integer or are equal to N+0.5, and N is positive whole
Number；
By the heap iterated logarithm t of the Distributed Bragg Reflection layer in control unit B, issue blue Micro-LED chip
Blue light components transmission；By the heap iterated logarithm m of the Distributed Bragg Reflection layer in control R unit or G unit, make blue
The feux rouges or green light that the blue light that Micro-LED chip issues excites the red quantum dot layer or green quantum dot layer to issue are from top
Portion penetrates, and unabsorbed blu-ray reflection rewindes and excites the red quantum dot layer or green quantum in trapezoid micro-structure again
Point luminescent layer, enhances the outgoing intensity of feux rouges or green light, to improve the luminous efficiency that Micro-LED is shown.
6. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
It is characterized in that: the high-reflectivity metal material that the reflecting layer uses with a thickness of 20 nanometers to 1 micron, by adjusting reflecting layer
Material and thickness control the reflection of light, improve the outgoing of vertical direction light and prevent adjacent pixel from going out the interference of light.
7. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
Be characterized in that: the microlens array is made of several transparent rectangular convex lenses；The length of the rectangular convex lens and institute
State that inversed trapezoid micro-structure top length is consistent, the width of square-lens is consistent with the trapezoid micro-structure top width, rectangular
The radius of curvature of mirror is greater than the depth of the trapezoid micro-structure.
8. a kind of light efficiency according to claim 1 extracts and the true color Micro-LED without pixel interference shows structure,
Be characterized in that: the envelope framework is transparent material, and the lining for being provided with array arrangement LED chip is coated in through printing or inkjet printing
Bottom surrounding seals 1-3 times with a thickness of the sum of inversed trapezoid micro-structure depth and chip thickness of framework.
9. a kind of true color Micro-LED based on the described in any item light efficiencies extractions of claim 1-8 and without pixel interference is aobvious
Show the manufacturing method of structure, it is characterised in that: the following steps are included:
Step S1: a blue Micro-LED chip array is provided, blue Micro-LED chip is arranged in array and is set to lining
Bottom surface；
Step S2: in production inversed trapezoid micro-structure；
Step S3: it is prepared using printing or inkjet printing technology on another surface of transparent substrate of not inversed trapezoid micro-structure transparent
Square microlens array；The length of the rectangular convex lens is consistent with the inversed trapezoid micro-structure top length, square-lens
Width it is consistent with the trapezoid micro-structure top width, the radius of curvature of square-lens is greater than the depth of the trapezoid micro-structure
Degree；
Step S4: layer of transparent is coated in the substrate surrounding of setting array arrangement LED chip using printing or inkjet printing technology
Envelope framework, seal 1-3 times with a thickness of the sum of trapezoid micro-structure depth and chip thickness of framework；
Step S5: bottom centre's point of the LED chip central point and the inversed trapezoid micro-structure is aligned one by one, exhaust envelope
Dress.
10. a kind of light efficiency according to claim 9 extracts and the true color Micro-LED without pixel interference shows structure
Manufacturing method, it is characterised in that: step S2 specifically includes the following steps:
Step S21: providing a transparent substrate, a protective layer is coated on transparent substrate surface, using photoetching, laser processing, spray
The protective layer is made graphically and is in the trapezoidal reservoir of array distribution by ink printing and sandblast technology；The trapezoidal reservoir
It is transversely successively arranged successively by R/G/B sequence, the top opening length of the trapezoidal reservoir is less than or equal to LED core length of a film
The top opening width of degree, the trapezoidal reservoir is less than or equal to LED chip width；The bottom lengths of the trapezoidal reservoir
More than or equal to LED core leaf length, and be less than or equal to adjacent LED chip chamber away from；The bottom width of the trapezoidal reservoir is big
In or equal to LED chip width, and being less than or equal to depth of the adjacent LED chip chamber away from, the trapezoidal reservoir is 1 micron
To 10 microns；
Step S22: using the method for physical vapor or chemical vapor deposition the R unit, G unit and unit B trapezoidal storage
Liquid bath lower surface is coated with Distributed Bragg Reflection layer, is controlled by adjusting the heap iterated logarithm m and t of Distributed Bragg Reflection layer
The wavelength of emergent light processed and the wavelength of reflected light；
Step S23: filling red quantum dot using inkjet printing technology in the inverted trapezoidal reservoir R unit, is formed red
Quantum dot light emitting layer, the quantum dot thickness are less than or equal to the depth of the trapezoidal reservoir；
Step S24: green quantum dot is filled in the trapezoidal reservoir G unit using inkjet printing technology, forms green amount
Son point luminescent layer, the quantum dot thickness are less than or equal to the depth of the trapezoidal reservoir；
Step S25: the protective layer of trapezoidal reservoir surrounding is removed；
Step S26: one layer is plated in the inversed trapezoid micro-structure peripheral side using the method for physical vapor or chemical vapor deposition
Reflecting layer forms the R unit, G unit and unit B；The reflecting layer is with a thickness of 20 nanometers to 1 micron high-reflectivity metals
Material controls the reflection of light by adjusting reflector material and thickness, improves the outgoing of vertical direction light and prevents adjacent picture
Element goes out the interference of light.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120050694A1 (en) * | 2010-08-27 | 2012-03-01 | Industrial Technology Research Institute | Light emitting unit array and projection system |
| CN104617121A (en) * | 2015-01-04 | 2015-05-13 | 中国电子科技集团公司第五十五研究所 | Method for improving optical performance of active matrix miniature LED (light-emitting diode) display |
| CN107797333A (en) * | 2017-12-04 | 2018-03-13 | 福州大学 | A kind of quantum dot color membrane structure for being applied to multiple bases and ultrahigh resolution |
| CN107852795A (en) * | 2015-08-07 | 2018-03-27 | 三星电子株式会社 | Light emitting display device |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
| CN108281092A (en) * | 2018-01-24 | 2018-07-13 | 福州大学 | A kind of micron order LED shows the micro-structure and its manufacturing method of light efficiency extraction |
-
2018
- 2018-09-19 CN CN201811093385.5A patent/CN109256455B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120050694A1 (en) * | 2010-08-27 | 2012-03-01 | Industrial Technology Research Institute | Light emitting unit array and projection system |
| CN104617121A (en) * | 2015-01-04 | 2015-05-13 | 中国电子科技集团公司第五十五研究所 | Method for improving optical performance of active matrix miniature LED (light-emitting diode) display |
| CN107852795A (en) * | 2015-08-07 | 2018-03-27 | 三星电子株式会社 | Light emitting display device |
| CN107797333A (en) * | 2017-12-04 | 2018-03-13 | 福州大学 | A kind of quantum dot color membrane structure for being applied to multiple bases and ultrahigh resolution |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
| CN108281092A (en) * | 2018-01-24 | 2018-07-13 | 福州大学 | A kind of micron order LED shows the micro-structure and its manufacturing method of light efficiency extraction |
Cited By (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN110164322A (en) * | 2019-05-22 | 2019-08-23 | 深圳市华星光电半导体显示技术有限公司 | A kind of display panel and electronic device |
| US11263955B2 (en) | 2019-05-22 | 2022-03-01 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and electronic device |
| CN112234070A (en) * | 2019-06-27 | 2021-01-15 | 成都辰显光电有限公司 | Display panel, display device and manufacturing method of display panel |
| CN112233567A (en) * | 2019-06-27 | 2021-01-15 | 成都辰显光电有限公司 | Color conversion assembly, manufacturing method thereof and display panel |
| CN112234070B (en) * | 2019-06-27 | 2022-12-13 | 成都辰显光电有限公司 | Display panel, display device and manufacturing method of display panel |
| CN110350071A (en) * | 2019-06-28 | 2019-10-18 | 佛山市国星光电股份有限公司 | A kind of true color LED packaging and display module |
| CN112150937A (en) * | 2019-06-28 | 2020-12-29 | 成都辰显光电有限公司 | Color conversion assembly and display panel |
| CN112234078B (en) * | 2019-06-30 | 2022-11-01 | 成都辰显光电有限公司 | Color conversion assembly and display device |
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