CN109253803B - Non-refrigeration infrared polarization detector pixel structure and preparation method - Google Patents
Non-refrigeration infrared polarization detector pixel structure and preparation method Download PDFInfo
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/04—Polarimeters using electric detection means
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Abstract
The application provides a non-refrigeration infrared polarization detector pixel structure and a preparation method thereof, wherein the non-refrigeration infrared polarization detector pixel structure comprises: the bottom layer comprises a reading circuit base, a first metal electrode layer, a metal reflecting layer and a first medium protective layer, wherein the first metal electrode layer, the metal reflecting layer and the first medium protective layer are arranged on the reading circuit base; the intermediate layer comprises a first supporting layer, a thermosensitive layer, a second medium protective layer, a second metal electrode layer and a third medium protective layer; the upper layer comprises a second supporting layer arranged on the third medium protective layer and a grating layer arranged on the second supporting layer, and the grating layer comprises a plurality of gratings which are arranged in sequence. The pixel structure of the uncooled infrared polarization detector and the preparation method thereof greatly reduce the volume, reduce the thermal noise introduced by the grating layer, improve the polarization detection sensitivity and facilitate the increase of the extinction ratio of the grating layer.
Description
Technical Field
The application relates to the field of micro electro mechanical system process manufacturing in the semiconductor technology, in particular to a pixel structure of an uncooled infrared polarization detector and a preparation method thereof.
Background
The infrared polarization detection is a technology for increasing information dimensionality by obtaining polarization information of each point on the basis of infrared intensity detection, and not only can obtain the infrared intensity information of a target in a two-dimensional space, but also can obtain the polarization information of each point on an image. By utilizing the increased polarization dimension, the difference between the target such as camouflage, darkness and the like and the background can be enhanced, and the detection and identification capability of the target can be improved.
Currently common infrared polarization detection methods include time-sharing methods, partial amplitude methods, aperture-dividing methods, and focal plane array methods. The first three methods relate to a complex optical system, are large in size and high in cost, and the focal plane array method can achieve the acquisition of polarization information by only one detector and one lens, and is a research hotspot in the field of polarization imaging detection at present. The focal plane array method is divided into an external integration method and an internal integration method. The former is to bond or weld the processed Micro-polarization array plate on the detector focal plane array, and the latter is to directly prepare the Micro-grating on the focal plane pixel by using the MEMS (Micro Electro-Me-mechanical System) process. For the former, as for the current process capability, it is not difficult to realize the lithography level alignment, and the problem is that the bonding or welding is a mechanical process, and it is difficult to ensure the precision of micron level, so the external integration process has great difficulty and poor stability. Therefore, it is a good choice to fabricate the micro-gratings directly above the focal plane pixels.
In the field of visible light and infrared detection, a large number of documents report methods for preparing micro-gratings on pixels, specifically in the field of uncooled infrared imaging, a patent reports a micro-polarization structure, but in the structure, a grating layer and a heat-sensitive layer are positioned on the same micro-bridge surface, and the grating layer and the heat-sensitive layer are not isolated by heat conduction, so that on one hand, thermal noise of the grating layer is introduced, on the other hand, heat capacity of the bridge surface is increased, and the polarization detection efficiency is low.
Disclosure of Invention
The following presents a simplified summary of the application in order to provide a basic understanding of some aspects of the application. It should be understood that this summary is not an exhaustive overview of the present application. It is not intended to identify key or critical elements of the application or to delineate the scope of the application. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
In view of the foregoing defects in the prior art, an object of the present application is to provide a pixel structure of an uncooled infrared polarization detector and a manufacturing method thereof, so as to implement built-in integration of a polarization optical element and a focal plane of the detector, and thermal conduction isolation between a grating layer and a thermal sensitive layer, thereby reducing thermal noise introduced by the grating layer.
According to an aspect of the present application, there is provided an uncooled infrared polarization detector pixel structure, including: the bottom layer comprises a reading circuit base, a first metal electrode layer, a metal reflecting layer and a first medium protective layer, wherein the first metal electrode layer, the metal reflecting layer and the first medium protective layer are arranged on the reading circuit base; the first dielectric protection layer covers the first metal electrode layer and the metal reflection layer, and an electrode through hole is formed in the first dielectric protection layer to expose the first metal electrode layer; a readout circuit in the readout circuit base is electrically connected with the first metal electrode layer; the intermediate layer comprises a first supporting layer, a thermosensitive layer, a second medium protective layer, a second metal electrode layer and a third medium protective layer; the first support layer is arranged on the first medium protection layer, a first through hole is formed in the first support layer and ends at the first metal electrode layer, the thermosensitive layer is arranged on the first support layer, the second medium protection layer is arranged on the thermosensitive layer, a second through hole is formed in the second medium protection layer and ends at the thermosensitive layer, the second metal electrode layer is arranged on the second medium protection layer and comprises a metal electrode arranged in the first through hole and a metal connecting wire arranged in the second through hole, and the third medium protection layer is arranged on the second metal electrode layer; the thermosensitive layer is electrically connected with the first metal electrode layer through the second metal electrode layer; the upper layer comprises a second supporting layer arranged on the third medium protective layer and a grating layer arranged on the second supporting layer, and the grating layer comprises a plurality of gratings which are arranged in sequence.
According to another aspect of the application, a preparation method of a pixel structure of an uncooled infrared polarization detector is provided, which includes: manufacturing a first metal electrode layer on a reading circuit base, and carrying out graphical processing on the first metal electrode layer to enable the first metal electrode layer to be electrically connected with a reading circuit in the reading circuit base; depositing a metal reflecting layer on the reading circuit base, and carrying out graphical processing on the metal reflecting layer; depositing a first dielectric protection layer on the first metal electrode layer and the metal reflection layer of the reading circuit base, and carrying out graphical processing on the first dielectric protection layer to enable the first dielectric protection layer to be provided with an electrode through hole so as to expose the first metal electrode layer; depositing a first sacrificial layer on the patterned first dielectric protection layer, and performing patterning on the first sacrificial layer to expose the first metal electrode layer exposed in the electrode through hole; depositing a first support layer on the first sacrificial layer after the patterning treatment, and performing the patterning treatment on the first support layer to form a first through hole and a channel for releasing the first sacrificial layer, wherein the first through hole is terminated at the first metal electrode layer; depositing a heat-sensitive layer on the first support layer after the patterning treatment, and performing the patterning treatment on the heat-sensitive layer; depositing a second medium protective layer on the heat-sensitive layer after the patterning treatment, and performing patterning treatment on the second medium protective layer to form a second through hole, wherein the second through hole is terminated at the heat-sensitive layer; depositing a second metal electrode layer on the patterned second dielectric protection layer, and performing patterning on the second metal electrode layer to form a metal electrode arranged in the first through hole and a metal connecting line arranged in the second through hole; depositing a third dielectric protection layer on the second metal electrode layer after the patterning treatment, and performing patterning treatment on the third dielectric protection layer to form a channel for releasing the first sacrificial layer; depositing a second sacrificial layer on the patterned third dielectric protection layer, and performing patterning on the second sacrificial layer to expose part of the third dielectric protection layer; depositing a second supporting layer on the patterned third medium protective layer, and performing patterning on the second supporting layer; and manufacturing a grating layer on the second support layer after the patterning treatment, wherein the grating layer comprises a plurality of gratings which are sequentially arranged.
The application provides a non-refrigeration infrared polarization detector pixel structure and preparation method, can not only realize polarization optical element and detector focal plane's built-in integration, with infrared polarization detection system integration to a camera, need not complicated optical system and electromechanical system, the technological complexity has been showing and has been reduced, and the volume reduces by a wide margin, and compare with direct supporting layer growth grating structure at temperature sensing layer place, the heat-conduction of grating layer with temperature sensing layer is kept apart, the thermal noise that the grating layer introduced has been reduced, polarization detection sensitivity has been improved, the grating layer of this application monopolizes the second supporting layer, the space of second supporting layer all is used for placing the grating layer, grating layer's size has been enlarged, be favorable to increasing grating layer's extinction ratio.
Drawings
To further clarify the above and other advantages and features of the present invention, a more particular description of embodiments of the invention will be rendered by reference to the appended drawings. The accompanying drawings, which are incorporated in and form a part of this specification, together with the detailed description below. It is appreciated that these drawings depict only typical examples of the invention and are therefore not to be considered limiting of its scope. In the drawings:
FIG. 1 is a schematic diagram illustrating the formation of a first metal electrode layer, a metal reflective layer and a first dielectric protection layer on a readout circuitry substrate according to the present application;
FIG. 2 is a schematic diagram of the formation of a first sacrificial layer according to the present application;
FIG. 3 is a schematic diagram of the formation of a first support layer according to the present application;
FIG. 4 is a schematic diagram of the formation of a thermosensitive layer and a second media protective layer according to the present application;
FIG. 5 is a schematic diagram illustrating the formation of a second metal electrode layer and a third dielectric protection layer according to the present application;
FIG. 6 is a schematic diagram of the formation of a second sacrificial layer according to the present application;
FIG. 7 is a schematic diagram of the formation of a second support layer according to the present application;
FIG. 8 is a schematic diagram of the formation of a grating layer according to the present application;
FIG. 9 is a schematic cross-sectional view of a pixel structure of an uncooled infrared polarization detector according to the present application;
FIG. 10A is a schematic cross-sectional view of a grating of a pure metal structure according to the present application;
FIG. 10B is a cross-sectional schematic view of a grating of a multilayer composite structure according to the present application;
FIG. 11A is a schematic top view of a 0 grating according to the present application;
FIG. 11B is a schematic top view of a 90 grating according to the present application;
FIG. 11C is a schematic top view of a 45 grating according to the present application;
FIG. 11D is a schematic top view of a 135 grating according to the present application;
FIG. 11E is a schematic top view of a 60 grating according to the present application;
fig. 11F is a schematic top view of a 120 grating according to the present application.
The same or similar reference numbers in the drawings identify the same or similar elements.
Detailed Description
Exemplary embodiments of the present application will be described hereinafter with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features of an actual implementation are described in the specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure. It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the device structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
According to the application, a non-refrigeration infrared polarization detector pixel structure is introduced, includes: the bottom layer comprises a reading circuit base, a first metal electrode layer, a metal reflecting layer and a first medium protective layer, wherein the first metal electrode layer, the metal reflecting layer and the first medium protective layer are arranged on the reading circuit base; the intermediate layer comprises a first supporting layer, a thermosensitive layer, a second medium protective layer, a second metal electrode layer and a third medium protective layer; the upper layer comprises a second supporting layer arranged on the third medium protective layer and a grating layer arranged on the second supporting layer, and the grating layer comprises a plurality of gratings which are arranged in sequence.
Fig. 9 is a schematic cross-sectional view of a pixel structure of an uncooled infrared polarization detector according to the present application, which includes: the readout circuit comprises a readout circuit base 1, a first metal electrode layer 2, a metal reflecting layer 3, a first medium protection layer 4, a first support layer 6, a thermosensitive layer 7, a second medium protection layer 8, a second metal electrode layer 9, a third medium protection layer 10, a second support layer 12 and a grating layer 13.
The bottom layer comprises a reading circuit base 1, and a first metal electrode layer 2, a metal reflecting layer 3 and a first dielectric protection layer 4 which are arranged on the reading circuit base 1, wherein the first metal electrode layer 2 can be made of one of nickel-chromium alloy, titanium and titanium nitride, the metal reflecting layer 3 can be made of aluminum-silicon-copper or aluminum, the thickness of the metal reflecting layer 3 can be 300-1000 nm, the specific thickness can be selected by a person skilled in the art according to needs, the first dielectric protection layer 4 can be made of one of silicon nitride, silicon oxide and silicon oxynitride, the first dielectric protection layer 4 covers the first metal electrode layer 2 and the metal reflecting layer 3, and an electrode through hole 4-1 is arranged on the first dielectric protection layer 4 to expose the first metal electrode layer 2.
The readout circuitry in the readout circuitry base 1 is electrically connected to the first metal electrode layer 2.
The intermediate layers include a first support layer 6, a thermosensitive layer 7, a second dielectric protective layer 8, a second metal electrode layer 9, and a third dielectric protective layer 10.
A first supporting layer 6 is arranged on the bottom layer, the first supporting layer 6 can be made of one of silicon nitride, silicon oxide and silicon oxynitride, a first through hole 6-1 is formed in the first supporting layer 6, the first through hole 6-1 is terminated at the first metal electrode layer 2, a heat-sensitive layer 7 is arranged on the first supporting layer 6, the heat-sensitive layer 7 can be made of one of vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxide and yttrium barium copper oxide, a second medium protecting layer 8 is arranged on the heat-sensitive layer 7, the second medium layer 8 can be made of one of silicon nitride, silicon oxide and silicon oxynitride, a second through hole 8-1 is formed in the second medium protecting layer 8, the second through hole 8-1 is terminated at the heat-sensitive layer 7, a second metal electrode layer 9 is arranged on the second medium protecting layer 8, and the second metal electrode layer 9 can be made of nichrome, The second metal electrode layer 9 comprises a metal electrode arranged in the first through hole 6-1 and a metal connecting wire arranged in the second through hole 8-1, the second metal electrode layer 9 is provided with a third dielectric protection layer 10, and the third dielectric protection layer 10 can be made of one of silicon nitride, silicon oxide and silicon oxynitride.
The thermosensitive layer 7 is electrically connected to the first metal electrode layer 2 through the second metal electrode layer 9.
The application provides a non-refrigeration infrared polarization detector pixel structure adopts the mode of grating layer and the thermal sensitive layer heat-conduction isolation, and the heat that the grating layer produced directly spreads into the reading circuit base via second supporting layer, third medium protective layer, second metal electrode layer and first metal electrode layer, and does not pass through the thermal sensitive layer, has realized the heat-conduction isolation of grating layer and thermal sensitive layer, has reduced the thermal noise that the grating layer introduced.
The upper layer includes a second support layer 12 disposed on the third medium protection layer 10 and a grating layer 13 disposed on the second support layer 12, the second support layer 12 may be made of one of silicon nitride, silicon oxide and silicon oxynitride, as shown in fig. 10A, the grating layer 13 may be a pure metal structure, and only includes a metal layer 101, the metal layer 101 may be made of, for example, aluminum, titanium, gold, silver, and the like, as shown in fig. 10B, the grating layer 13 may also be a multilayer composite structure, for example, may include the metal layer 101 and a medium layer 102, the medium layer 102 may be made of, for example, zinc sulfide, zinc selenide, and the like, the multilayer composite structure is beneficial to increasing the extinction ratio of grating lines, and may have a light filtering effect, the grating layer 13 includes a plurality of gratings arranged in sequence, the grating period of the grating layer is 10 to 1500nm, and the filling factor is 0.2 to 0.8.
The materials and thicknesses of the various layers of the pixel structure of the uncooled infrared polarization detector according to the embodiment of the present application are not limited herein, and can be selected and set by those skilled in the art as needed.
According to the application, a preparation method of the pixel structure of the uncooled infrared polarization detector is also introduced.
Fig. 1 is a schematic diagram illustrating formation of a first metal electrode layer, a metal reflective layer and a first dielectric protection layer on a readout circuit substrate according to the present application. The method comprises the steps of manufacturing a first metal electrode layer 2 on a reading circuit base 1, wherein the first metal electrode layer 2 can be made of one of nickel-chromium alloy, titanium and titanium nitride, patterning the first metal electrode layer 2 to enable the first metal electrode layer to be electrically connected with a reading circuit in the reading circuit base 1, depositing a metal reflecting layer 3 on the reading circuit base, wherein the metal reflecting layer 3 can be made of aluminum silicon copper or aluminum, the thickness of the metal reflecting layer 3 can be 300-1000 nm, the metal reflecting layer 3 is not limited in the above, patterning the metal reflecting layer 3, depositing a first dielectric protection layer 4 on the first metal electrode layer 2 and the metal reflecting layer 3 of the reading circuit base 1, wherein the first dielectric protection layer 4 can be made of one of silicon nitride, silicon oxide and silicon oxynitride, patterning the first dielectric protection layer 4 to enable an electrode through hole 4-1 to be formed in the first dielectric protection layer 4, to expose the first metal electrode layer 2.
Fig. 2 is a schematic diagram illustrating the formation of a first sacrificial layer according to the present application. Depositing a first sacrificial layer 5 on the patterned first dielectric protection layer 4, wherein the material of the first sacrificial layer 5 may be polyimide, and patterning the first sacrificial layer 5 to expose the first metal electrode layer 2.
Fig. 3 is a schematic diagram illustrating the formation of a first support layer according to the present application. Depositing a first support layer 6 on the patterned first sacrificial layer 5, wherein the material of the first support layer 6 can be one of silicon nitride, silicon oxide and silicon oxynitride, and patterning the first support layer 6 to form a first through hole 6-1 and a channel 6-2 for releasing the first sacrificial layer 5, wherein the first through hole 6-1 is terminated at the first metal electrode layer 2, and the channel for releasing the first sacrificial layer 5 is terminated at the first sacrificial layer 5.
Fig. 4 is a schematic diagram illustrating the formation of a thermosensitive layer and a second protective media layer according to the present application. Depositing a heat-sensitive layer 7 on the patterned first support layer 6, wherein the material of the heat-sensitive layer 7 can be one of vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese-cobalt-nickel-oxygen and yttrium-barium-copper-oxygen, patterning the heat-sensitive layer 7, depositing a second medium protective layer 8 on the patterned heat-sensitive layer 7, wherein the material of the second medium protective layer 8 can be one of silicon nitride, silicon oxide and silicon oxynitride, patterning the second medium protective layer 8 to form a second through hole 8-1, and the second through hole 8-1 is terminated at the heat-sensitive layer 7.
Fig. 5 is a schematic diagram illustrating formation of a second metal electrode layer and a third dielectric protection layer according to the present application. Depositing a second metal electrode layer 9 on the patterned second dielectric protection layer 8, wherein the material of the second metal electrode layer 9 may be one of nichrome, titanium and titanium nitride, patterning the second metal electrode layer 9 to form a metal electrode disposed in the first through hole 6-1 and a metal connection line disposed in the second through hole 8-1, depositing a third dielectric protection layer 10 on the patterned second metal electrode layer 9, wherein the material of the third dielectric protection layer 10 may be one of silicon nitride, silicon oxide and silicon oxynitride, and patterning the third dielectric protection layer 10 to open a channel for releasing the first sacrificial layer 5.
As another alternative, the channel 6-2 for releasing the first sacrificial layer 5 may not be opened first after the first support layer 6 is deposited, and a channel for releasing the first sacrificial layer 5 may be opened after the third dielectric protection layer 10 is deposited, and the channel is terminated at the first sacrificial layer 5.
Fig. 6 is a schematic diagram illustrating the formation of a second sacrificial layer according to the present application. And depositing a second sacrificial layer 11 on the patterned third dielectric protection layer 10, wherein the material of the second sacrificial layer 11 may be polyimide, and patterning the second sacrificial layer 11 to expose a part of the third dielectric protection layer 10.
Fig. 7 is a schematic diagram illustrating the formation of a second support layer according to the present application. And depositing a second support layer 12 on the patterned third dielectric protection layer 10, wherein the material of the second support layer 12 can be one of silicon nitride, silicon oxide and silicon oxynitride, and patterning the second support layer 12.
Fig. 8 is a schematic diagram illustrating the formation of a grating layer according to the present application. A grating layer 13 is manufactured on the second support layer 12 after the patterning processing, the grating layer 13 includes a plurality of gratings which are sequentially arranged, a grating period of the grating layer 13 is 10-1500 nm, a filling factor is 0.2-0.8, and the grating may be a pure metal structure (as shown in fig. 10A) or a multi-layer composite structure (as shown in fig. 10B).
Fig. 11A to 11F are schematic diagrams of gratings arranged along 0 °, 90 °, 45 °, 135 °, 60 ° and 120 ° directions, respectively, and this application is only exemplary, and the arrangement direction of the gratings is not limited to the above-mentioned directions, and those skilled in the art can select or rotate the gratings according to the needs.
The application provides a non-refrigeration infrared polarization detector pixel structure and preparation method, can not only realize polarization optical element and detector focal plane's built-in integration, with infrared polarization detection system integration to a camera, need not complicated optical system and electromechanical system, the technological complexity has been showing and has been reduced, and the volume reduces by a wide margin, and compare with direct supporting layer growth grating structure at temperature sensing layer place, the heat-conduction of grating layer with temperature sensing layer is kept apart, the thermal noise that the grating layer introduced has been reduced, polarization detection sensitivity has been improved, the grating layer of this application monopolizes the second supporting layer, the space of second supporting layer all is used for placing the grating layer, grating layer's size has been enlarged, be favorable to increasing grating layer's extinction ratio.
The present invention has been described above with reference to specific examples, but the present invention is not limited to these specific examples. It will be understood by those skilled in the art that various changes, substitutions of equivalents, variations, and the like can be made thereto without departing from the spirit of the invention, and the scope of the invention is to be determined from the following claims. Also, in the structure of the present invention, the respective components may be decomposed and/or recombined, and these decomposition and/or recombination should be regarded as an equivalent of the present invention.
According to the above description of the embodiments, the present application provides the following technical solutions:
the bottom layer comprises a reading circuit base, a first metal electrode layer, a metal reflecting layer and a first medium protective layer, wherein the first metal electrode layer, the metal reflecting layer and the first medium protective layer are arranged on the reading circuit base;
the first dielectric protection layer covers the first metal electrode layer and the metal reflection layer, and an electrode through hole is formed in the first dielectric protection layer to expose the first metal electrode layer;
a readout circuit in the readout circuit base is electrically connected with the first metal electrode layer;
the intermediate layer comprises a first supporting layer, a thermosensitive layer, a second medium protective layer, a second metal electrode layer and a third medium protective layer;
the first support layer is arranged on the first medium protection layer, a first through hole is formed in the first support layer and ends at the first metal electrode layer, the thermosensitive layer is arranged on the first support layer, the second medium protection layer is arranged on the thermosensitive layer, a second through hole is formed in the second medium protection layer and ends at the thermosensitive layer, the second metal electrode layer is arranged on the second medium protection layer and comprises a metal electrode arranged in the first through hole and a metal connecting wire arranged in the second through hole, and the third medium protection layer is arranged on the second metal electrode layer;
the thermosensitive layer is electrically connected with the first metal electrode layer through the second metal electrode layer;
the upper layer comprises a second supporting layer arranged on the third medium protective layer and a grating layer arranged on the second supporting layer, and the grating layer comprises a plurality of gratings which are arranged in sequence.
the grating period of the grating layer is 10-1500 nm, and the filling factor is 0.2-0.8.
the grating is a pure metal structure or a multilayer composite structure.
the material of the thermosensitive layer is one of the following materials: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxide and yttrium barium copper oxide.
the first dielectric protection layer, the first support layer, the second dielectric protection layer, the third dielectric protection layer and the second support layer are respectively made of one of the following materials: silicon nitride, silicon oxide, and silicon oxynitride.
the metal reflecting layer is made of aluminum silicon copper or aluminum.
the first metal electrode layer and the second metal electrode layer are made of one of the following materials: nichrome, titanium, and titanium nitride.
manufacturing a first metal electrode layer on a reading circuit base, and carrying out graphical processing on the first metal electrode layer to enable the first metal electrode layer to be electrically connected with a reading circuit in the reading circuit base;
depositing a metal reflecting layer on the reading circuit base, and carrying out graphical processing on the metal reflecting layer;
depositing a first dielectric protection layer on the first metal electrode layer and the metal reflection layer of the reading circuit base, and carrying out graphical processing on the first dielectric protection layer to enable the first dielectric protection layer to be provided with an electrode through hole so as to expose the first metal electrode layer;
depositing a first sacrificial layer on the patterned first dielectric protection layer, and performing patterning on the first sacrificial layer to expose the first metal electrode layer exposed in the electrode through hole;
depositing a first support layer on the first sacrificial layer after the patterning treatment, and performing the patterning treatment on the first support layer to form a first through hole and a channel for releasing the first sacrificial layer, wherein the first through hole is terminated at the first metal electrode layer;
depositing a heat-sensitive layer on the first support layer after the patterning treatment, and performing the patterning treatment on the heat-sensitive layer;
depositing a second medium protective layer on the heat-sensitive layer after the patterning treatment, and performing patterning treatment on the second medium protective layer to form a second through hole, wherein the second through hole is terminated at the heat-sensitive layer;
depositing a second metal electrode layer on the patterned second dielectric protection layer, and performing patterning on the second metal electrode layer to form a metal electrode arranged in the first through hole and a metal connecting line arranged in the second through hole;
depositing a third dielectric protection layer on the second metal electrode layer after the patterning treatment, and performing patterning treatment on the third dielectric protection layer to form a channel for releasing the first sacrificial layer;
depositing a second sacrificial layer on the patterned third dielectric protection layer, and performing patterning on the second sacrificial layer to expose part of the third dielectric protection layer;
depositing a second supporting layer on the patterned third medium protective layer, and performing patterning on the second supporting layer;
and manufacturing a grating layer on the second support layer after the patterning treatment, wherein the grating layer comprises a plurality of gratings which are sequentially arranged.
the first sacrificial layer and the second sacrificial layer are made of polyimide.
the grating period of the grating layer is 10-1500 nm, and the filling factor is 0.2-0.8.
the grating is a pure metal structure or a multilayer composite structure.
the material of the thermosensitive layer is one of the following materials: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxide and yttrium barium copper oxide.
the first dielectric protection layer, the first support layer, the second dielectric protection layer, the third dielectric protection layer and the second support layer are respectively made of one of the following materials: silicon nitride, silicon oxide, and silicon oxynitride.
Scheme 14, the method of scheme 8, wherein,
the metal reflecting layer is made of aluminum silicon copper or aluminum.
Scheme 15 the method of scheme 8, wherein,
the first metal electrode layer and the second metal electrode layer are made of one of the following materials: nichrome, titanium, and titanium nitride.
Claims (15)
1. An uncooled infrared polarization detector pixel structure, comprising:
the bottom layer comprises a reading circuit base, a first metal electrode layer, a metal reflecting layer and a first medium protective layer, wherein the first metal electrode layer, the metal reflecting layer and the first medium protective layer are arranged on the reading circuit base;
the first dielectric protection layer covers the first metal electrode layer and the metal reflection layer, and an electrode through hole is formed in the first dielectric protection layer to expose the first metal electrode layer;
a readout circuit in the readout circuit base is electrically connected with the first metal electrode layer;
the intermediate layer comprises a first supporting layer, a thermosensitive layer, a second medium protective layer, a second metal electrode layer and a third medium protective layer;
the first support layer is arranged on the first medium protection layer, a first through hole is formed in the first support layer and ends at the first metal electrode layer, the thermosensitive layer is arranged on the first support layer, the second medium protection layer is arranged on the thermosensitive layer, a second through hole is formed in the second medium protection layer and ends at the thermosensitive layer, the second metal electrode layer is arranged on the second medium protection layer and comprises a metal electrode arranged in the first through hole and a metal connecting wire arranged in the second through hole, and the third medium protection layer is arranged on the second metal electrode layer;
the thermosensitive layer is electrically connected with the first metal electrode layer through the second metal electrode layer;
the upper layer comprises a second supporting layer arranged on the third medium protective layer and a grating layer arranged on the second supporting layer, the grating layer comprises a plurality of gratings which are sequentially arranged, and a supporting point of the second supporting layer is aligned with a metal electrode in a first through hole on the first supporting layer, so that heat generated by the grating layer is directly transmitted into the reading circuit base through the second supporting layer, the third medium protective layer, the second metal electrode layer and the first metal electrode layer without passing through the thermosensitive layer.
2. The uncooled infrared polarization detector pixel structure of claim 1, wherein,
the grating period of the grating layer is 10-1500 nm, and the filling factor is 0.2-0.8.
3. The uncooled infrared polarization detector pixel structure of claim 1, wherein,
the grating is a pure metal structure or a multilayer composite structure.
4. The uncooled infrared polarization detector pixel structure of claim 1, wherein,
the material of the thermosensitive layer is one of the following materials: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxide and yttrium barium copper oxide.
5. The uncooled infrared polarization detector pixel structure of claim 1, wherein,
the first dielectric protection layer, the first support layer, the second dielectric protection layer, the third dielectric protection layer and the second support layer are respectively made of one of the following materials: silicon nitride, silicon oxide, and silicon oxynitride.
6. The uncooled infrared polarization detector pixel structure of claim 1, wherein,
the metal reflecting layer is made of aluminum silicon copper or aluminum.
7. The uncooled infrared polarization detector pixel structure of claim 1, wherein,
the first metal electrode layer and the second metal electrode layer are made of one of the following materials: nichrome, titanium, and titanium nitride.
8. A preparation method of an uncooled infrared polarization detector pixel structure comprises the following steps:
manufacturing a first metal electrode layer on a reading circuit base, and carrying out graphical processing on the first metal electrode layer to enable the first metal electrode layer to be electrically connected with a reading circuit in the reading circuit base;
depositing a metal reflecting layer on the reading circuit base, and carrying out graphical processing on the metal reflecting layer;
depositing a first dielectric protection layer on the first metal electrode layer and the metal reflection layer of the reading circuit base, and carrying out graphical processing on the first dielectric protection layer to enable the first dielectric protection layer to be provided with an electrode through hole so as to expose the first metal electrode layer;
depositing a first sacrificial layer on the patterned first dielectric protection layer, and performing patterning on the first sacrificial layer to expose the first metal electrode layer exposed in the electrode through hole;
depositing a first support layer on the first sacrificial layer after the patterning treatment, and performing the patterning treatment on the first support layer to form a first through hole and a channel for releasing the first sacrificial layer, wherein the first through hole is terminated at the first metal electrode layer;
depositing a heat-sensitive layer on the first support layer after the patterning treatment, and performing the patterning treatment on the heat-sensitive layer;
depositing a second medium protective layer on the heat-sensitive layer after the patterning treatment, and performing patterning treatment on the second medium protective layer to form a second through hole, wherein the second through hole is terminated at the heat-sensitive layer;
depositing a second metal electrode layer on the patterned second dielectric protection layer, and performing patterning on the second metal electrode layer to form a metal electrode arranged in the first through hole and a metal connecting line arranged in the second through hole;
depositing a third dielectric protection layer on the second metal electrode layer after the patterning treatment, and performing patterning treatment on the third dielectric protection layer to form a channel for releasing the first sacrificial layer;
depositing a second sacrificial layer on the patterned third dielectric protection layer, and performing patterning on the second sacrificial layer to expose part of the third dielectric protection layer;
depositing a second supporting layer on the patterned third medium protective layer, and performing patterning on the second supporting layer;
manufacturing a grating layer on the second support layer after the imaging treatment, wherein the grating layer comprises a plurality of gratings which are sequentially arranged;
the fulcrum of the second supporting layer is aligned with the metal electrode in the first through hole on the first supporting layer, so that heat generated by the grating layer is directly transmitted into the reading circuit base through the second supporting layer, the third medium protective layer, the second metal electrode layer and the first metal electrode layer, and does not pass through the thermosensitive layer.
9. The method of claim 8, wherein,
the first sacrificial layer and the second sacrificial layer are made of polyimide.
10. The method of claim 8, wherein,
the grating period of the grating layer is 10-1500 nm, and the filling factor is 0.2-0.8.
11. The method of claim 8, wherein,
the grating is a pure metal structure or a multilayer composite structure.
12. The method of claim 8, wherein,
the material of the thermosensitive layer is one of the following materials: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxide and yttrium barium copper oxide.
13. The method of claim 8, wherein,
the first dielectric protection layer, the first support layer, the second dielectric protection layer, the third dielectric protection layer and the second support layer are respectively made of one of the following materials: silicon nitride, silicon oxide, and silicon oxynitride.
14. The method of claim 8, wherein,
the metal reflecting layer is made of aluminum silicon copper or aluminum.
15. The method of claim 8, wherein,
the first metal electrode layer and the second metal electrode layer are made of one of the following materials: nichrome, titanium, and titanium nitride.
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| CN110207818B (en) * | 2019-05-28 | 2021-07-20 | 上海集成电路研发中心有限公司 | Polarized infrared detector structure |
| CN110849484B (en) * | 2019-10-28 | 2021-03-26 | 西北工业大学 | Extinction ratio testing device and method for infrared polarization camera with split-focus plane |
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