CN109253803A - Uncooled ir polarization detector pixel structure and preparation method - Google Patents
Uncooled ir polarization detector pixel structure and preparation method Download PDFInfo
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- CN109253803A CN109253803A CN201810996239.7A CN201810996239A CN109253803A CN 109253803 A CN109253803 A CN 109253803A CN 201810996239 A CN201810996239 A CN 201810996239A CN 109253803 A CN109253803 A CN 109253803A
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/04—Polarimeters using electric detection means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The application provides a kind of uncooled ir polarization detector pixel structure and preparation method; wherein uncooled ir polarization detector pixel structure includes: bottom, and the bottom includes reading circuit pedestal and the first metal electrode layer being located on the reading circuit pedestal, metallic reflector and first medium protective layer；Middle layer, the middle layer include the first supporting layer, heat-sensitive layer, second medium protective layer, the second metal electrode layer and third medium protective layer；Upper layer, the upper layer include the grating layer for being located at the second supporting layer on the third medium protective layer and being located on second supporting layer, and the grating layer includes the grating that several are arranged successively.Uncooled ir polarization detector pixel structure and preparation method provided by the present application, and volume significantly reduces, and reduces the thermal noise of grating layer introducing, improves Polarization Detection sensitivity, is conducive to the extinction ratio for increasing grating layer.
Description
Technical field
This application involves in semiconductor technology MEMS technique manufacturing field more particularly to a kind of uncooled ir
Polarization detector pixel structure and preparation method.
Background technique
Infrared polarization detection is that polarization information on the basis of infrared intensity detection, by obtaining every bit increases information
A kind of technology of dimension can not only obtain target in the infrared intensity information of two-dimensional space, and can obtain every bit on image
Polarization information.Using increased polarization dimension, camouflage, the secretly targets such as weak and the difference enhancing of background can be made, be conducive to raising pair
The detection and recognition capability of target.
Current common infrared polarization detection method includes time-sharing approach, divide amplitude, point aperture method and focal plane arrays (FPA) method.
First three methods are related to complicated optical system, and volume is big, at high cost, and focal plane arrays (FPA) method only need a detector and
The acquisition of polarization information can be realized in one camera lens, is the research hotspot of current polarization imaging field of detecting.Focal plane arrays (FPA) method
It is divided into again external integrated and built-in two kinds integrated.Micro- polarization arrays piece that the former will process is bonded or welded to detector coke
In planar array, the latter is to utilize MEMS (Micro Electro-Me-Chanical System, microelectromechanical systems) work
Skill directly prepares low-light grid on the pixel of focal plane.For the former, for current technological ability, the alignment of photoetching grade is realized simultaneously
Not difficult, it is a mechanical process that problem, which is to be bonded or welded, it is difficult to ensure that micron-sized precision, therefore external integrated technique
Difficulty is big, stability is poor.Therefore, it is a good selection that low-light grid are directly prepared above the pixel of focal plane.
In visible light and infrared acquisition field, existing lot of documents reports the side that low-light grid are prepared on pixel at present
Method has a kind of micro- polarization structure of patent report, but grating layer and temperature-sensitive in the structure specific to non refrigerating infrared imaging field
Layer is in same microbridge face, and heat transfer isolation is not implemented in the two, on the one hand introduces grating layer thermal noise as a result, on the one hand increases
Big bridge floor thermal capacitance, Polarization Detection efficiency are lower.
Summary of the invention
The brief overview about the application is given below, in order to provide the basic of some aspects about the application
Understand.It should be appreciated that this general introduction is not the exhaustive general introduction about the application.It is not intended to determine the pass of the application
Key or pith, nor intended limitation scope of the present application.Its purpose only provides certain concepts in simplified form,
Taking this as a prelude to a more detailed description discussed later.
In view of the drawbacks described above of the prior art, the first purpose of the application is to provide a kind of uncooled ir polarization detector
Pixel structure and preparation method, to realize integrated and grating layer and temperature-sensitive built in polarization optical element and detector focal plane
The heat transfer isolation of layer, reduces the thermal noise that grating layer introduces.
According to the one aspect of the application, a kind of uncooled ir polarization detector pixel structure is provided, comprising: bottom,
The bottom includes reading circuit pedestal and the first metal electrode layer being located on the reading circuit pedestal, metallic reflector
With first medium protective layer；Wherein, the first medium protective layer covers first metal electrode layer and metallic reflector,
The first medium protective layer is equipped with electrode through-hole, to expose first metal electrode layer；In the reading circuit pedestal
Reading circuit be electrically connected with first metal electrode layer；Middle layer, the middle layer include the first supporting layer, heat-sensitive layer,
Second medium protective layer, the second metal electrode layer and third medium protective layer；Institute is equipped on the first medium protective layer
The first supporting layer is stated, first supporting layer is equipped with first through hole, and the first through hole terminates at first metal electrode
Layer, first supporting layer be equipped with the heat-sensitive layer, the heat-sensitive layer be equipped with the second medium protective layer, described second
Medium protective layer is equipped with the second through-hole, and second through-hole terminates at the heat-sensitive layer, sets on the second medium protective layer
There is second metal electrode layer, second metal electrode layer includes the metal electrode being located in the first through hole and is located at
Metal connecting line in second through-hole, second metal electrode layer are equipped with the third medium protective layer；The temperature-sensitive
Layer is electrically connected by second metal electrode layer with first metal electrode layer；Upper layer, the upper layer are described including being located at
The second supporting layer on third medium protective layer and the grating layer being located on second supporting layer, the grating layer include
Several gratings being arranged successively.
According to further aspect of the application, a kind of preparation side of uncooled ir polarization detector pixel structure is provided
Method, comprising: make the first metal electrode layer on reading circuit pedestal, and place is patterned to first metal electrode layer
Reason, is electrically connected it with the reading circuit in the reading circuit pedestal；Deposited metal reflects on the reading circuit pedestal
Layer, and processing is patterned to the metallic reflector；The reading circuit pedestal first metal electrode layer and
First medium protective layer is deposited on the metallic reflector, and processing is patterned to the first medium protective layer, makes it
Electrode through-hole is provided with to expose first metal electrode layer；It is deposited on the first medium protective layer after graphical treatment
First sacrificial layer, and processing is patterned to first sacrificial layer, to expose expose in the electrode through-hole described
One metal electrode layer；The first supporting layer is deposited on first sacrificial layer after graphical treatment, and to first support
Layer is patterned processing to be provided with first through hole and the channel for discharging first sacrificial layer, and the first through hole terminates
In first metal electrode layer；Heat-sensitive layer is deposited on first supporting layer after graphical treatment, and to the temperature-sensitive
Layer is patterned processing；Second medium protective layer is deposited on the heat-sensitive layer after graphical treatment, and to described second
Medium protective layer is patterned processing to be provided with the second through-hole, and second through-hole terminates at the heat-sensitive layer；Graphical
The second metal electrode layer is deposited on treated the second medium protective layer, and figure is carried out to second metal electrode layer
Change processing, to form the metal electrode being located in the first through hole and the metal connecting line being located in second through-hole；Scheming
Third medium protective layer is deposited on shapeization treated second metal electrode layer, and the third medium protective layer is carried out
Graphical treatment, to be provided with the channel for discharging first sacrificial layer；The third medium after graphical treatment is protected
Depositing second sacrificial layer on sheath, and processing is patterned to second sacrificial layer, with third medium described in exposed portion
Protective layer；The second supporting layer is deposited in the third medium protective layer after graphical treatment, and to second supporting layer
It is patterned processing；Grating layer is made on second supporting layer after graphical treatment, the grating layer includes several
A grating being arranged successively.
Uncooled ir polarization detector pixel structure and preparation method provided by the present application, can not only realize polarization
Optical element and the built-in of detector focal plane integrate, and infrared polarization detection system are integrated to a camera, without complexity
Optical system and Mechatronic Systems significantly reduce technology complexity, and volume significantly reduces, and with directly in heat-sensitive layer institute
Supporting layer growth optical grating construction compare, realize grating layer and be isolated with the heat transfer of heat-sensitive layer, reduce grating layer introduce
Thermal noise, improve Polarization Detection sensitivity, the grating layer of the application monopolizes the second supporting layer, and the space of the second supporting layer is complete
Portion is used to place grating layer, expands the size of grating layer, is conducive to the extinction ratio for increasing grating layer.
Detailed description of the invention
For the above and other advantages and features that the present invention is further explained, with reference to the accompanying drawing to of the invention specific
Embodiment is described in further detail.Attached drawing includes in the present specification and to be formed together with following detailed description
A part of this specification.It should be appreciated that these attached drawings only describe typical case of the invention, and it is not to be taken as to the present invention
Range restriction.In the accompanying drawings:
Fig. 1 is to be protected according to the first metal electrode layer, metallic reflector and first medium on the reading circuit pedestal of the application
The formation schematic diagram of sheath；
Fig. 2 is the formation schematic diagram according to the first sacrificial layer of the application；
Fig. 3 is the formation schematic diagram according to the first supporting layer of the application；
Fig. 4 is the formation schematic diagram of the heat-sensitive layer and second medium protective layer according to the application；
Fig. 5 is the formation schematic diagram of the second metal electrode layer and third medium protective layer according to the application；
Fig. 6 is the formation schematic diagram according to the second sacrificial layer of the application；
Fig. 7 is the formation schematic diagram according to the second supporting layer of the application；
Fig. 8 is the formation schematic diagram according to the grating layer of the application；
Fig. 9 is the diagrammatic cross-section according to the uncooled ir polarization detector pixel structure of the application；
Figure 10 A is the diagrammatic cross-section according to the grating of the simple metal structure of the application；
Figure 10 B is the diagrammatic cross-section according to the grating of the multi-layer compound structure of the application；
Figure 11 A is 0 ° of grating schematic top plan view according to the application；
Figure 11 B is 90 ° of grating schematic top plan views according to the application；
Figure 11 C is 45 ° of grating schematic top plan views according to the application；
Figure 11 D is 135 ° of grating schematic top plan views according to the application；
Figure 11 E is 60 ° of grating schematic top plan views according to the application；
Figure 11 F is 120 ° of grating schematic top plan views according to the application.
The same or similar appended drawing reference represents the same or similar component in attached drawing.
Specific embodiment
It is described hereinafter in connection with exemplary embodiment of the attached drawing to the application.For clarity and conciseness,
All features of actual implementation mode are not described in the description.It should be understood, however, that developing any this actual implementation
Much decisions specific to embodiment must be made during example, to realize the specific purposes of developer, such as are accorded with
Close those of related to system business restrictive condition, and these restrictive conditions may with the difference of embodiment and
Change.In addition, it will also be appreciated that although development is likely to be extremely complex and time-consuming, to having benefited from the disclosure
For those skilled in the art of appearance, this exploitation is only routine task.Here, and also it should be noted is that, in order to
It avoids unnecessary details and has obscured the present invention, illustrate only in the accompanying drawings and closely related according to the solution of the present invention
Device structure and/or processing step, and be omitted and the little other details of relationship of the present invention.
According to the application, a kind of uncooled ir polarization detector pixel structure is introduced, comprising: bottom, the bottom packet
The first metal electrode layer, metallic reflector and the first medium for including reading circuit pedestal and being located on the reading circuit pedestal
Protective layer；Middle layer, the middle layer include the first supporting layer, heat-sensitive layer, second medium protective layer, the second metal electrode layer and
Third medium protective layer；Upper layer, the upper layer include the second supporting layer being located on the third medium protective layer and set
Grating layer on second supporting layer, the grating layer include the grating that several are arranged successively.
As shown in Figure 9 for according to the diagrammatic cross-section of the uncooled ir polarization detector pixel structure of the application, comprising:
Reading circuit pedestal 1, the first metal electrode layer 2, metallic reflector 3, first medium protective layer 4, the first supporting layer 6, heat-sensitive layer
7, second medium protective layer 8, the second metal electrode layer 9, third medium protective layer 10, the second supporting layer 12 and grating layer 13.
Wherein, bottom includes reading circuit pedestal 1 and the first metal electrode layer 2 being located on reading circuit pedestal 1, gold
Belong to reflecting layer 3 and first medium protective layer 4, the material of the first metal electrode layer 2 can be its of nichrome, titanium and titanium nitride
One of, the material of metallic reflector 3 can be aluminium copper silicon or aluminium, and the thickness of metallic reflector 3 can be 300~1000nm,
Specific thickness those skilled in the art, which can according to need, to be selected, and the material of first medium protective layer 4 can be nitridation
One of silicon, silica and silicon oxynitride, first medium protective layer 4 cover the first metal electrode layer 2 and metallic reflector
3, and electrode through-hole 4-1 is equipped on first medium protective layer 4, to expose the first metal electrode layer 2.
Reading circuit in 1 in reading circuit pedestal is electrically connected with the first metal electrode layer 2.
Middle layer includes that the first supporting layer 6, heat-sensitive layer 7, second medium protective layer 8, the second metal electrode layer 9 and third are situated between
Quality guarantee sheath 10.
The first supporting layer 6 is equipped on bottom, the material of the first supporting layer 6 can be silicon nitride, silica and nitrogen oxygen
One of SiClx, the first supporting layer 6 are equipped with first through hole 6-1, and first through hole 6-1 terminates at the first metal electrode layer 2,
First supporting layer 6 is equipped with heat-sensitive layer 7, and the material of heat-sensitive layer 7 can be vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt
One of nickel oxygen and yttrium barium copper oxide, heat-sensitive layer 7 are equipped with second medium protective layer 8, and the material of second dielectric layer 8 can be
One of silicon nitride, silica and silicon oxynitride, second medium protective layer 8 are equipped with the second through-hole 8-1, the second through-hole 8-
1 terminates at heat-sensitive layer 7, and second medium protective layer 8 is equipped with the second metal electrode layer 9, and the material of the second metal electrode layer 9 can be with
It is one of nichrome, titanium and titanium nitride, the second metal electrode layer 9 includes the metal electricity being located in first through hole 6-1
Pole and the metal connecting line being located in the second through-hole 8-1, the second metal electrode layer 9 are equipped with third medium protective layer 10, and third is situated between
The material of quality guarantee sheath 10 can be one of silicon nitride, silica and silicon oxynitride.
Heat-sensitive layer 7 is electrically connected by the second metal electrode layer 9 with the first metal electrode layer 2.
Uncooled ir polarization detector pixel structure provided by the present application is isolated using grating layer with heat-sensitive layer heat transfer
Mode, the heat that grating layer generates is directly via the second supporting layer, third medium protective layer, the second metal electrode layer and the
One metal electrode layer is passed to reading circuit pedestal, and without heat-sensitive layer, realize grating layer is isolated with the heat transfer of heat-sensitive layer,
Reduce the thermal noise of grating layer introducing.
Upper layer includes the second supporting layer 12 being located on third medium protective layer 10 and is located on the second supporting layer 12
Grating layer 13, the material of the second supporting layer 12 can be one of silicon nitride, silica and silicon oxynitride, such as Figure 10 A
Shown, grating layer 13 can be simple metal structure, only include metal layer 101, the material of metal layer 101 for example can be aluminium, titanium,
Gold, silver etc., as shown in Figure 10 B, grating layer 13 are also possible to multi-layer compound structure, such as may include metal layer 101 and medium
Layer 102, the material of dielectric layer 102 for example can be zinc sulphide, zinc selenide etc., and multi-layer compound structure is conducive to increase grating lines
Extinction ratio, can have the function of optical filtering, grating layer 13 includes the grating that several are arranged successively, the screen periods of grating layer
For 10~1500nm, fill factor is 0.2~0.8.
Each layer of the uncooled ir polarization detector pixel structure according to presently filed embodiment is not limited herein
Material and thickness, those skilled in the art, which can according to need, to be selected and sets.
According to the application, a kind of preparation method of uncooled ir polarization detector pixel structure is also introduced.
As shown in Figure 1 for according to the first metal electrode layer, metallic reflector and first on the reading circuit pedestal of the application
The formation schematic diagram of medium protective layer.The first metal electrode layer 2 is made on reading circuit pedestal 1, the first metal electrode layer 2
Material can be one of nichrome, titanium and titanium nitride, and to 2 graphical treatment of the first metal electrode layer, make its with
Reading circuit electrical connection in reading circuit pedestal 1, the metal reflective layer 3 on reading circuit pedestal, metallic reflector 3
Material can be aluminium copper silicon or aluminium, and the thickness of metallic reflector 3 can be 300~1000nm, be not limited thereto, and to metal
Reflecting layer 3 is patterned processing, deposits first on the first metal electrode layer 2 and metallic reflector 3 of reading circuit pedestal 1
Medium protective layer 4, the material of first medium protective layer 4 can be one of silicon nitride, silica and silicon oxynitride, and right
First medium protective layer 4 is patterned processing, makes to be provided with electrode through-hole 4-1 on first medium protective layer 4, to expose the first gold medal
Belong to electrode layer 2.
As shown in Figure 2 for according to the formation schematic diagram of the first sacrificial layer of the application.First after graphical treatment is situated between
Deposit the first sacrificial layer 5 on quality guarantee sheath 4, the material of the first sacrificial layer 5 can be polyimides, and to the first sacrificial layer 5 into
Row graphical treatment, to expose the first metal electrode layer 2.
As shown in Figure 3 for according to the formation schematic diagram of the first supporting layer of the application.First after graphical treatment is sacrificial
Deposit the first supporting layer 6 on domestic animal layer 5, the material of the first supporting layer 6 can be silicon nitride, silica and silicon oxynitride wherein it
One, and processing is patterned to be provided with first through hole 6-1 and the channel for discharging the first sacrificial layer 5 to the first supporting layer 6
6-2, first through hole 6-1 terminate at the first metal electrode layer 2, and the channel for discharging the first sacrificial layer 5 terminates at the first sacrifice
Layer 5.
As shown in Figure 4 for according to the formation schematic diagram of the heat-sensitive layer of the application and second medium protective layer.Graphically locating
Heat-sensitive layer 7 is deposited on the first supporting layer 6 after reason, the material of heat-sensitive layer 7 can be vanadium oxide, titanium oxide, zinc oxide, amorphous
One of silicon, manganese cobalt nickel oxygen and yttrium barium copper oxide, and processing is patterned to heat-sensitive layer 7, the heat after graphical treatment
Second medium protective layer 8 is deposited in photosensitive layer 7, the material of second medium protective layer 8 can be silicon nitride, silica and silicon oxynitride
One of, and processing is patterned to second medium protective layer 8 to be provided with the second through-hole 8-1, the second through-hole 8-1 termination
In heat-sensitive layer 7.
As shown in Figure 5 for according to the formation schematic diagram of the second metal electrode layer of the application and third medium protective layer.?
Deposit the second metal electrode layer 9 on second medium protective layer 8 after graphical treatment, the material of the second metal electrode layer 9 can be with
It is one of nichrome, titanium and titanium nitride, and processing is patterned to the second metal electrode layer 9, is located at being formed
Metal electrode in first through hole 6-1 and the metal connecting line being located in the second through-hole 8-1, the second metal after graphical treatment
Third medium protective layer 10 is deposited on electrode layer 9, the material of third medium protective layer 10 can be silicon nitride, silica and nitrogen oxygen
One of SiClx, and processing is patterned to third medium protective layer 10, to be provided with for discharging the first sacrificial layer 5
Channel.
As another optional embodiment, release first can not opened first after having deposited the first supporting layer 6
The channel 6-2 of sacrificial layer 5, can be to be provided with together after complete third medium protective layer 10 to be deposited for discharging the first sacrificial layer 5
Channel, which terminates at the first sacrificial layer 5.
As shown in Figure 6 for according to the formation schematic diagram of the second sacrificial layer of the application.Third after graphical treatment is situated between
Depositing second sacrificial layer 11 on quality guarantee sheath 10, the material of the second sacrificial layer 11 can be polyimides, and to the second sacrificial layer
11 are patterned processing, with exposed portion third medium protective layer 10.
As shown in Figure 7 for according to the formation schematic diagram of the second supporting layer of the application.Third after graphical treatment is situated between
The second supporting layer 12 is deposited on quality guarantee sheath 10, the material of the second supporting layer 12 can be silicon nitride, silica and silicon oxynitride
One of, and processing is patterned to the second supporting layer 12.
As shown in Figure 8 for according to the formation schematic diagram of the grating layer of the application.The second supporting layer after graphical treatment
Making grating layer 13 on 12, grating layer 13 includes several gratings for being arranged successively, and the screen periods of grating layer 13 are 10~
1500nm, fill factor are 0.2~0.8, and grating can be simple metal structure (as shown in Figure 10 A) or multi-layer compound structure (such as
Shown in Figure 10 B).
It is respectively the schematic diagram that grating is arranged along 0 °, 90 °, 45 °, 135 °, 60 ° and 120 ° of directions as shown in Figure 11 A-11F,
The application is only for example signal, and the orientation of grating is not limited only to above-mentioned direction, and those skilled in the art can be according to need
It is selected or is rotated.
Uncooled ir polarization detector pixel structure and preparation method provided by the present application, can not only realize polarization
Optical element and the built-in of detector focal plane integrate, and infrared polarization detection system are integrated to a camera, without complexity
Optical system and Mechatronic Systems significantly reduce technology complexity, and volume significantly reduces, and with directly in heat-sensitive layer institute
Supporting layer growth optical grating construction compare, realize grating layer and be isolated with the heat transfer of heat-sensitive layer, reduce grating layer introduce
Thermal noise, improve Polarization Detection sensitivity, the grating layer of the application monopolizes the second supporting layer, and the space of the second supporting layer is complete
Portion is used to place grating layer, expands the size of grating layer, is conducive to the extinction ratio for increasing grating layer.
Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations
Example.It will be understood by those skilled in the art that various modifications, equivalent replacement, variation etc. can also be done to the present invention, these transformation
It, all should be within protection scope of the present invention without departing from spirit of the invention.Also, in the structure of the present invention, each portion
Part can be decomposed and/or be reconfigured, these, which decompose and/or reconfigure, should be considered as equivalent scheme of the invention.
According to the explanation of embodiment of above, this application provides following technical solutions:
Scheme 1, a kind of uncooled ir polarization detector pixel structure, wherein include:
Bottom, the bottom include reading circuit pedestal and the first metal electrode for being located on the reading circuit pedestal
Layer, metallic reflector and first medium protective layer；
Wherein, the first medium protective layer covers first metal electrode layer and metallic reflector, described first
Medium protective layer is equipped with electrode through-hole, to expose first metal electrode layer；
Reading circuit in the reading circuit pedestal is electrically connected with first metal electrode layer；
Middle layer, the middle layer include the first supporting layer, heat-sensitive layer, second medium protective layer, the second metal electrode layer
With third medium protective layer；
First supporting layer is equipped on the first medium protective layer, it is logical that first supporting layer is equipped with first
Hole, the first through hole terminate at first metal electrode layer, and first supporting layer is equipped with the heat-sensitive layer, the heat
Photosensitive layer is equipped with the second medium protective layer, and the second medium protective layer is equipped with the second through-hole, and second through-hole is whole
The heat-sensitive layer is terminated in, the second medium protective layer is equipped with second metal electrode layer, second metal electrode layer
Including the metal electrode being located in the first through hole and the metal connecting line being located in second through-hole, the second metal electricity
Pole layer is equipped with the third medium protective layer；
The heat-sensitive layer is electrically connected by second metal electrode layer with first metal electrode layer；
Upper layer, the upper layer include the second supporting layer being located on the third medium protective layer and are located at described
Grating layer on two supporting layers, the grating layer include the grating that several are arranged successively.
Scheme 2, uncooled ir polarization detector pixel structure according to scheme 1, wherein
The screen periods of the grating layer are 10~1500nm, and fill factor is 0.2~0.8.
Scheme 3, uncooled ir polarization detector pixel structure according to scheme 1, wherein
The grating is simple metal structure or multi-layer compound structure.
Scheme 4, uncooled ir polarization detector pixel structure according to scheme 1, wherein
The material of the heat-sensitive layer be one of: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxygen and
Yttrium barium copper oxide.
Scheme 5, uncooled ir polarization detector pixel structure according to scheme 1, wherein
The first medium protective layer, first supporting layer, the second medium protective layer, the third media protection
The material of layer and second supporting layer is respectively one of: silicon nitride, silica and silicon oxynitride.
Scheme 6, uncooled ir polarization detector pixel structure according to scheme 1, wherein
The material of the metallic reflector is aluminium copper silicon or aluminium.
Scheme 7, uncooled ir polarization detector pixel structure according to scheme 1, wherein
The material of first metal electrode layer and second metal electrode layer is one of: nickel chromium triangle closes
Gold, titanium and titanium nitride.
Scheme 8, a kind of preparation method of uncooled ir polarization detector pixel structure, wherein include:
The first metal electrode layer is made on reading circuit pedestal, and place is patterned to first metal electrode layer
Reason, is electrically connected it with the reading circuit in the reading circuit pedestal；
The metal reflective layer on the reading circuit pedestal, and processing is patterned to the metallic reflector；
First medium is deposited on first metal electrode layer of the reading circuit pedestal and the metallic reflector
Protective layer, and processing is patterned to the first medium protective layer, so that it is provided with electrode through-hole to expose first gold medal
Belong to electrode layer；
The first sacrificial layer is deposited on the first medium protective layer after graphical treatment, and to first sacrificial layer
It is patterned processing, to expose first metal electrode layer exposed in the electrode through-hole；
The first supporting layer is deposited on first sacrificial layer after graphical treatment, and first supporting layer is carried out
To be provided with first through hole and the channel for discharging first sacrificial layer, the first through hole terminates at described graphical treatment
First metal electrode layer；
Heat-sensitive layer is deposited on first supporting layer after graphical treatment, and place is patterned to the heat-sensitive layer
Reason；
Second medium protective layer is deposited on the heat-sensitive layer after graphical treatment, and to the second medium protective layer
Processing is patterned to be provided with the second through-hole, second through-hole terminates at the heat-sensitive layer；
The second metal electrode layer is deposited on the second medium protective layer after graphical treatment, and to second gold medal
Belong to electrode layer and be patterned processing, to form the metal electrode being located in the first through hole and be located in second through-hole
Metal connecting line；
Third medium protective layer is deposited on second metal electrode layer after graphical treatment, and is situated between to the third
Quality guarantee sheath is patterned processing, to be provided with the channel for discharging first sacrificial layer；
Depositing second sacrificial layer in the third medium protective layer after graphical treatment, and to second sacrificial layer
It is patterned processing, with third medium protective layer described in exposed portion；
The second supporting layer is deposited in the third medium protective layer after graphical treatment, and to second supporting layer
It is patterned processing；
Grating layer is made on second supporting layer after graphical treatment, the grating layer includes that several are successively arranged
The grating of column.
Scheme 9, the method for claim 8, wherein
The material of first sacrificial layer and second sacrificial layer is polyimides.
Scheme 10, the method for claim 8, wherein
The screen periods of the grating layer are 10~1500nm, and fill factor is 0.2~0.8.
Scheme 11, the method for claim 8, wherein
The grating is simple metal structure or multi-layer compound structure.
Scheme 12, the method for claim 8, wherein
The material of the heat-sensitive layer be one of: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxygen and
Yttrium barium copper oxide.
Scheme 13, the method for claim 8, wherein
The first medium protective layer, first supporting layer, the second medium protective layer, the third media protection
The material of layer and second supporting layer is respectively one of: silicon nitride, silica and silicon oxynitride.
Scheme 14, the method for claim 8, wherein
The material of the metallic reflector is aluminium copper silicon or aluminium.
Scheme 15, the method for claim 8, wherein
The material of first metal electrode layer and second metal electrode layer is one of: nickel chromium triangle closes
Gold, titanium and titanium nitride.
Claims (10)
1. a kind of uncooled ir polarization detector pixel structure, wherein include:
Bottom, the bottom include reading circuit pedestal and the first metal electrode layer being located on the reading circuit pedestal,
Metallic reflector and first medium protective layer；
Wherein, the first medium protective layer covers first metal electrode layer and metallic reflector, in the first medium
Protective layer is equipped with electrode through-hole, to expose first metal electrode layer；
Reading circuit in the reading circuit pedestal is electrically connected with first metal electrode layer；
Middle layer, the middle layer include the first supporting layer, heat-sensitive layer, second medium protective layer, the second metal electrode layer and the
Three medium protective layers；
First supporting layer is equipped on the first medium protective layer, first supporting layer is equipped with first through hole,
The first through hole terminates at first metal electrode layer, and first supporting layer is equipped with the heat-sensitive layer, the temperature-sensitive
Layer is equipped with the second medium protective layer, and the second medium protective layer is equipped with the second through-hole, and second through-hole terminates
In the heat-sensitive layer, the second medium protective layer is equipped with second metal electrode layer, the second metal electrode layer packet
The metal connecting line for including the metal electrode being located in the first through hole and being located in second through-hole, second metal electrode
Layer is equipped with the third medium protective layer；
The heat-sensitive layer is electrically connected by second metal electrode layer with first metal electrode layer；
Upper layer, the upper layer include the second supporting layer being located on the third medium protective layer and are located at described second
The grating layer on layer is supportted, the grating layer includes the grating that several are arranged successively.
2. uncooled ir polarization detector pixel structure according to claim 1, wherein
The screen periods of the grating layer are 10~1500nm, and fill factor is 0.2~0.8.
3. uncooled ir polarization detector pixel structure according to claim 1, wherein
The grating is simple metal structure or multi-layer compound structure.
4. uncooled ir polarization detector pixel structure according to claim 1, wherein
The material of the heat-sensitive layer is one of: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxygen and yttrium barium
Copper oxygen.
5. uncooled ir polarization detector pixel structure according to claim 1, wherein
The material of first metal electrode layer and second metal electrode layer is one of: nichrome, titanium
And titanium nitride.
6. a kind of preparation method of uncooled ir polarization detector pixel structure, wherein include:
The first metal electrode layer is made on reading circuit pedestal, and processing is patterned to first metal electrode layer,
It is electrically connected it with the reading circuit in the reading circuit pedestal；
The metal reflective layer on the reading circuit pedestal, and processing is patterned to the metallic reflector；
First medium protection is deposited on first metal electrode layer of the reading circuit pedestal and the metallic reflector
Layer, and processing is patterned to the first medium protective layer, so that it is provided with electrode through-hole to expose the first metal electricity
Pole layer；
The first sacrificial layer is deposited on the first medium protective layer after graphical treatment, and first sacrificial layer is carried out
Graphical treatment, to expose first metal electrode layer exposed in the electrode through-hole；
The first supporting layer is deposited on first sacrificial layer after graphical treatment, and figure is carried out to first supporting layer
Change processing to be provided with first through hole and the channel for discharging first sacrificial layer, the first through hole terminate at described first
Metal electrode layer；
Heat-sensitive layer is deposited on first supporting layer after graphical treatment, and processing is patterned to the heat-sensitive layer；
Second medium protective layer is deposited on the heat-sensitive layer after graphical treatment, and the second medium protective layer is carried out
For graphical treatment to be provided with the second through-hole, second through-hole terminates at the heat-sensitive layer；
The second metal electrode layer is deposited on the second medium protective layer after graphical treatment, and to the second metal electricity
Pole layer is patterned processing, to form the metal electrode being located in the first through hole and the gold being located in second through-hole
Belong to line；
Third medium protective layer is deposited on second metal electrode layer after graphical treatment, and the third medium is protected
Sheath is patterned processing, to be provided with the channel for discharging first sacrificial layer；
Depositing second sacrificial layer in the third medium protective layer after graphical treatment, and second sacrificial layer is carried out
Graphical treatment, with third medium protective layer described in exposed portion；
The second supporting layer is deposited in the third medium protective layer after graphical treatment, and second supporting layer is carried out
Graphical treatment；
Grating layer is made on second supporting layer after graphical treatment, the grating layer includes what several were arranged successively
Grating.
7. according to the method described in claim 6, wherein,
The material of first sacrificial layer and second sacrificial layer is polyimides.
8. according to the method described in claim 6, wherein,
The screen periods of the grating layer are 10~1500nm, and fill factor is 0.2~0.8.
9. according to the method described in claim 6, wherein,
The grating is simple metal structure or multi-layer compound structure.
10. according to the method described in claim 6, wherein,
The material of the heat-sensitive layer is one of: vanadium oxide, titanium oxide, zinc oxide, amorphous silicon, manganese cobalt nickel oxygen and yttrium barium
Copper oxygen.
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