CN109246575B - Preparation method of high-frequency progressive acoustic impedance matching layer - Google Patents
Preparation method of high-frequency progressive acoustic impedance matching layer Download PDFInfo
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- CN109246575B CN109246575B CN201810907838.7A CN201810907838A CN109246575B CN 109246575 B CN109246575 B CN 109246575B CN 201810907838 A CN201810907838 A CN 201810907838A CN 109246575 B CN109246575 B CN 109246575B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/001—Moulding aspects of diaphragm or surround
Abstract
The invention discloses a preparation method of a high-frequency progressive acoustic impedance matching layer, which comprises the following steps: s1: using a mask plate with a complementary structure, and accurately aligning and exposing through a photoetching machine by adopting a double-sided inclined exposure method to obtain a photoresist progressive structure; s2: and filling a matching material in the photoresist progressive structure to form a progressive acoustic impedance matching layer. The preparation method of the high-frequency progressive acoustic impedance matching layer disclosed by the invention realizes the acoustic matching material with micron size precision, can be used for acoustic matching in a high-frequency ultrasonic period, and has high preparation precision.
Description
Technical Field
The invention relates to a preparation method of a high-frequency progressive acoustic impedance matching layer.
Background
The ultrasonic transducer is a device capable of realizing interconversion of electric signals and acoustic signals due to the piezoelectric effect, and is the most central acoustic device in an ultrasonic system.
At present, most of commercial ultrasonic transducers adopt a single-layer matching layer, a double-layer matching layer or a multi-layer matching layer, wherein the acoustic impedance matching between the piezoelectric layer and the detected object cannot be completely realized due to the limited number of matching layers in the single-layer matching and the double-layer matching, although the scheme of the multi-layer matching layer can remarkably improve the transmission efficiency of acoustic energy to the detected object, the number of corresponding bonding layers is also increased in sequence along with the increase of the number of matching layers, which undoubtedly increases the difficulty, uncertainty and complexity of the probe manufacturing process. Meanwhile, multiple reflections of the ultrasonic waves in the bonding layer are enhanced, and the overall performance of the ultrasonic transducer is further reduced. If the acoustic impedance of the matching layer is changed gradually instead of layer by layer, namely the size of the gradually-changed matching acoustic impedance is gradually changed from the piezoelectric layer side to the contact layer side, the problem that the acoustic energy transmission efficiency and the manufacturing process cannot be obtained simultaneously in the multilayer matching scheme can be solved.
Traditionally, quarter-wave method is used to match acoustic impedance, which can only achieve the best matching near the center frequency, and the impedance matching can be achieved in a wider frequency range by the impedance gradual layer.
The ultrasonic transducer with gradually changed acoustic impedance is also available in the market, but has the following defects:
chinese patent No. CN200810038902 proposes a progressive acoustic impedance preparation method, which cannot realize precise control of acoustic impedance progression.
Chinese patent No. CN200820151708.7 discloses an ultrasonic transducer with continuously changing acoustic impedance, which is mainly formed by mixing and curing multiple acoustic material particles with the same particle size and different specific gravities with a polymer coupling agent, wherein the particles are sequentially and longitudinally arranged from large to small according to specific gravity under the action of gravity, and a matching layer with continuously changing acoustic impedance can be formed after curing.
In chinese patent CN201310296746.7, a gradient temperature curing method is used to manufacture a matching layer with gradually changing acoustic impedance, and the specific implementation scheme is as follows: the viscosity that sets up multistage curing temperature messenger resin is by the thickening thin to at this in-process filling material forms different sedimentary layers according to the density difference, the powder that relative density is little up floats, and the powder that relative density is big is down sunken, makes the powder of inside different densities along the matching layer of vertical formation acoustic impedance gradual change, but its manufacturing process is complicated, needs the powder of multiple different proportion and sets up multistage curing temperature, and this method temperature control is strict, and curing time is longer.
Disclosure of Invention
In view of the disadvantages of the prior art, the present invention aims to provide a method for preparing a high-frequency progressive acoustic impedance matching layer, which realizes an acoustic matching material with micron dimension precision, can be used for acoustic matching during high-frequency ultrasound, and has high preparation precision.
In order to achieve the above object, the present invention provides a method for preparing a high-frequency progressive acoustic impedance matching layer, comprising the steps of:
s1: using a mask plate with a complementary structure, and accurately aligning and exposing through a photoetching machine by adopting a double-sided inclined exposure method to obtain a photoresist progressive structure;
s2: and filling a matching material in the photoresist progressive structure to form a progressive acoustic impedance matching layer.
Compared with the prior art, the preparation method of the high-frequency progressive acoustic impedance matching layer disclosed by the invention realizes the acoustic matching material with micron size precision, can be used for acoustic matching in a high-frequency ultrasonic period, and has high preparation precision.
According to another specific embodiment of the present invention, the mask plate of the complementary structure includes an upper mask plate and a lower mask plate; the upper mask plate is rectangular and comprises a light transmitting set and a light-tight set, the four corners of the upper mask plate are the light-tight sets, and the light transmitting set and the light-tight sets are arranged at intervals; the lower mask plate is rectangular and comprises a light transmission group and a light-tight group, the four corners of the lower mask plate are the light transmission group, and the light transmission group and the light-tight group are arranged at intervals.
According to another specific embodiment of the present invention, the matching material comprises silicone.
According to another embodiment of the present invention, the step S1 further includes steps S11-S15:
s11: sputtering a metal layer on a quartz wafer;
s12: adopting an upper mask plate to plate the metal layer;
s13: spin-coating photoresist on the metal layer subjected to the plate making by the upper mask plate to obtain a photoresist layer;
s14: exposing the glued quartz wafer;
s15: and developing the photoresist layer to obtain a photoresist progressive structure.
According to another embodiment of the present invention, the step S14 further includes steps S141 to S142:
s141: performing ultraviolet inclined exposure from the bottom of the quartz wafer;
s142: and vertically exposing from the upper surface of the photoresist layer by adopting the lower mask plate.
According to another embodiment of the present invention, the step S2 further includes steps S21-S22:
s21: slowly injecting the matching material into the photoresist progressive structure, and vacuumizing to enable the matching material to fully permeate into the photoresist progressive structure to obtain a matching material progressive structure;
s22: and after the matching material is solidified, stripping the matching material progressive structure from the photoresist progressive structure.
According to another embodiment of the present invention, the method further comprises step S23 after the step S22:
and injecting a supplementary material into the matching material progressive structure to form a progressive acoustic impedance microstructure.
According to another embodiment of the present invention, the photoresist is SU-8 photoresist.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Drawings
FIG. 1 is a flow chart of a method for preparing a high frequency progressive acoustic impedance matching layer provided in example 1;
fig. 2 is a flowchart of step S1 in the method for manufacturing a high-frequency progressive acoustic impedance matching layer provided in example 1;
fig. 3 is a flowchart of step S2 in the method for manufacturing a high-frequency progressive acoustic impedance matching layer provided in example 1.
Detailed Description
Example 1
Referring to fig. 1, a flowchart of a method for manufacturing a high-frequency progressive acoustic impedance matching layer according to this embodiment is shown. The method includes steps S1-S2:
s1: and (3) using a mask plate with a complementary structure, adopting a double-sided inclined exposure method, and accurately aligning and exposing through a photoetching machine to obtain a photoresist progressive structure.
This step is used to obtain a photoresist progression.
Specifically, in the step, the mask plate with the complementary structure comprises an upper mask plate and a lower mask plate; the upper mask plate is rectangular and comprises a light transmitting set and a light-tight set, the four corners of the upper mask plate are the light-tight sets, and the light transmitting set and the light-tight sets are arranged at intervals; the lower mask plate is rectangular and comprises a light transmission group and a light-tight group, the four corners of the lower mask plate are the light transmission group, and the light transmission group and the light-tight group are arranged at intervals. Go up the mask plate and mean for complementary structure with lower mask plate promptly: the light transmission set of the upper mask plate is arranged corresponding to the light-tight set of the lower mask plate, and the light-tight set of the upper mask plate is arranged corresponding to the light transmission set of the lower mask plate.
Fig. 2 is a flowchart of step S1 in the method for manufacturing a high-frequency progressive acoustic impedance matching layer according to this embodiment; step S1 further includes steps S11-S15:
s11: a metal layer is sputtered on the quartz wafer.
This step is used to sputter form a metal layer.
S12: and (5) adopting an upper mask plate to plate the metal layer.
The step is used for mask plate making of the metal layer by adopting the upper mask plate.
S13: and (4) spin-coating photoresist on the metal layer subjected to the plate making by the upper mask plate to obtain a photoresist layer.
The step is used for spin-coating the photoresist to obtain a photoresist layer. In this embodiment, the photoresist is SU-8 photoresist.
S14: and exposing the glued quartz wafer.
This step is for performing exposure processing, and further, includes S141 to S142:
s141: performing ultraviolet oblique exposure from the bottom of the quartz wafer;
s142: and vertically exposing from the upper side of the photoresist layer by adopting a lower mask plate.
S15: and developing the photoresist layer to obtain the photoresist progressive structure.
This step is used for development processing to obtain a photoresist progressive structure.
S2: and filling a matching material in the photoresist progressive structure to form a progressive acoustic impedance matching layer.
This step is used for filling, forming a progressive acoustic impedance matching layer.
Fig. 3 is a flowchart of step S2 in the method for manufacturing a high-frequency progressive acoustic impedance matching layer according to this embodiment. Specifically, the step S2 further includes steps S21-S23:
s21: slowly injecting the matching material into the photoresist progressive structure, and vacuumizing to enable the matching material to fully permeate into the photoresist progressive structure to obtain the matching material progressive structure;
s22: and stripping the matching material progressive structure from the photoresist progressive structure after the matching material is solidified.
S23: and injecting a supplementary material into the matching material progressive structure to form a progressive acoustic impedance microstructure.
In this embodiment, the matching material comprises PDMS, i.e. polydimethylsiloxane, abbreviated as silicone.
The method for preparing the high-frequency progressive acoustic impedance matching layer disclosed by the embodiment realizes the acoustic matching material with micron size precision, can be used for acoustic matching in a high-frequency ultrasonic period, and has high preparation precision.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that changes may be made without departing from the scope of the invention, and it is intended that all matter contained in the above description or shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense.
Claims (5)
1. A preparation method of a high-frequency progressive acoustic impedance matching layer is characterized by comprising the following steps:
s1: using a mask plate with a complementary structure, and accurately aligning and exposing through a photoetching machine by adopting a double-sided inclined exposure method to obtain a photoresist progressive structure; the mask plate with the complementary structure comprises an upper mask plate and a lower mask plate; the upper mask plate is rectangular and comprises a light transmitting set and a light-tight set, the four corners of the upper mask plate are the light-tight sets, and the light transmitting set and the light-tight sets are arranged at intervals; the lower mask plate is rectangular and comprises a light transmission group and a light-tight group, the four corners of the lower mask plate are the light transmission groups, and the light transmission groups and the light-tight group are arranged at intervals; the step S1 further includes steps S11-S15:
s11: sputtering a metal layer on a quartz wafer;
s12: adopting an upper mask plate to plate the metal layer;
s13: spin-coating photoresist on the metal layer subjected to the plate making by the upper mask plate to obtain a photoresist layer;
s14: exposing the glued quartz wafer; the step S14 further includes steps S141 to S142:
s141: performing ultraviolet inclined exposure from the bottom of the quartz wafer;
s142: vertically exposing from the upper surface of the photoresist layer by adopting the lower mask plate;
s15: developing the photoresist layer to obtain a photoresist progressive structure;
s2: and filling a matching material in the photoresist progressive structure to form a progressive acoustic impedance matching layer.
2. The method of preparing a high frequency progressive acoustic impedance matching layer of claim 1, wherein the matching material comprises silicone.
3. The method for preparing a high frequency progressive acoustic impedance matching layer according to claim 1, wherein the step S2 further comprises steps S21-S22:
s21: slowly injecting the matching material into the photoresist progressive structure, and vacuumizing to enable the matching material to fully permeate into the photoresist progressive structure to obtain a matching material progressive structure;
s22: and after the matching material is solidified, stripping the matching material progressive structure from the photoresist progressive structure.
4. The method for preparing a high frequency progressive acoustic impedance matching layer according to claim 3, further comprising, after the step S22, a step S23:
and injecting a supplementary material into the matching material progressive structure to form a progressive acoustic impedance microstructure.
5. The method for preparing a high-frequency progressive acoustic impedance matching layer according to claim 1, wherein the photoresist is SU-8 photoresist.
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| CN201810907838.7A CN109246575B (en) | 2018-08-09 | 2018-08-09 | Preparation method of high-frequency progressive acoustic impedance matching layer |
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| CN201810907838.7A CN109246575B (en) | 2018-08-09 | 2018-08-09 | Preparation method of high-frequency progressive acoustic impedance matching layer |
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| CN109246575B true CN109246575B (en) | 2020-10-16 |
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| CN111447535B (en) * | 2020-03-20 | 2021-02-09 | 中国科学院声学研究所 | Gradient-adjustable acoustic impedance matching layer |
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| US20130195333A1 (en) * | 2012-01-31 | 2013-08-01 | General Electric Company | Method for Forming a Graded Matching Layer Structure |
| US10497747B2 (en) * | 2012-11-28 | 2019-12-03 | Invensense, Inc. | Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing |
| US20160001232A1 (en) * | 2014-07-02 | 2016-01-07 | Lawrence Livermore National Security, Llc | Nanofabrication of nanoporous arrays |
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| CN1756955A (en) * | 2003-03-04 | 2006-04-05 | 茹瓦·皮尔斯·琼斯 | Device having matched accoustical impedance and method |
| CN201261009Y (en) * | 2008-08-07 | 2009-06-24 | 上海爱培克电子科技有限公司 | Supersonic transducer with continuously changed acoustic impedance |
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