CN110098816A - A kind of piezo-electric resonator of narrow support frame high quality factor - Google Patents
A kind of piezo-electric resonator of narrow support frame high quality factor Download PDFInfo
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- CN110098816A CN110098816A CN201910380938.3A CN201910380938A CN110098816A CN 110098816 A CN110098816 A CN 110098816A CN 201910380938 A CN201910380938 A CN 201910380938A CN 110098816 A CN110098816 A CN 110098816A
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- 239000000463 material Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004568 cement Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 102
- 239000011229 interlayer Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 silicon nitrides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0509—Holders; Supports for bulk acoustic wave devices consisting of adhesive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of piezo-electric resonators of narrow support frame high quality factor, the surface of substrate is provided with groove and the surface of the substrate is fixed with the support layer, it is formed between the support layer and the groove in the air-gap and the air-gap filled with air, the surface of the support layer is fixed with the bottom electrode, the surface of the bottom electrode is fixed with the piezoelectric layer, the surface of the piezoelectric layer is fixed with the upper electrode, the lower section of the support layer is equipped with multiple highly-resistant material layers and low resistivity materials layer, the highly-resistant material layer and low resistivity materials interlayer every setting and the number of plies of the highly-resistant material layer and low resistivity materials layer it is identical, the highly-resistant material is fixed over the substrate, the upper surface of the low resistivity materials is fixed with the support layer, the invention also discloses a kind of narrow support frame is high The preparation method of the piezo-electric resonator of quality factor.Mechanical strength of the present invention is higher and quality factor are higher.
Description
Technical field
The present invention relates to resonator technologies field more particularly to a kind of piezo-electric resonators of narrow support frame high quality factor.
Background technique
Thin film bulk acoustic wave resonator is all analogous to the layer structure i.e. upper electrode of sandwich and asking for lower electrode sets
There is piezoelectric thin film layer.The back side of silicon substrate forms air chamber or logical using surface micromachined technology using lithographic technique
Cross filling domestic animal material method silicon upper surface formed air chamber with limited using the approximate zero impedance of air sound wave or
Person's energy is leaked out from piezoelectric layer.The disadvantage of TFBAR is that act of violence greatly removes silicon substrate and leads to resonator machinery fastness substantially
The reduction of degree.In general can in one layer of four silicon nitride of bottom electrode lower surface arrangement or silica as support layer to increase
Add TFBAR machinery fastness, but does so the quality factor Q value for seriously reducing TFBAR.
Summary of the invention
(1) the technical issues of solving
In view of the deficiencies of the prior art, the present invention provides a kind of piezo-electric resonator of narrow support frame high quality factor and its
Preparation method solves the problems, such as that existing resonator machinery fastness is not high and quality factor are not high.
(2) technical solution
To achieve the above object, the invention provides the following technical scheme: a kind of piezoelectricity of narrow support frame high quality factor is humorous
Shake device, including substrate, support layer, bottom electrode, air-gap, upper electrode and piezoelectric layer, the surface of the substrate are provided with recessed
The surface of slot and the substrate is fixed with the support layer, and the air-gap and institute are formed between the support layer and the groove
It states filled with air in air-gap, the surface of the support layer is fixed with the bottom electrode, and the surface of the bottom electrode is solid
Surely there is the piezoelectric layer, the surface of the piezoelectric layer is fixed with the upper electrode, and the lower section of the support layer is equipped with multiple high
Impedance material layer and low resistivity materials layer, the highly-resistant material layer and low resistivity materials interlayer are every setting and the high resistant
Anti- material layer and the number of plies of low resistivity materials layer are identical, and the highly-resistant material layer is fixed over the substrate, the low-resistance
The upper surface of anti-material layer is fixed with the support layer.
Preferably, the piezoelectric layer be AIN piezoelectric membrane, the substrate be earth silicon material, the bottom electrode and
Material used in upper electrode is one of Au, Mo, W, Pt.
Preferably, the air-gap contacts the lower surface of the support layer directly with air, and acoustic wave energy is limited
System is in the workspace.
A kind of preparation method of the piezo-electric resonator of support frame high quality factor narrow according to above scheme, feature
It is: includes the following steps:
(1): using the Si piece of standard RCA technique cleaning twin polishing, Si piece is substrate material, is then pasted at interval
Then the highly-resistant material layer and low resistivity materials layer all use PECVD method to deposit one layer of 100nm/ on Si piece two sides
The SiN of 100nm thickness4/SiO2Film；
(2): then use DC magnetron sputtering method deposition 100nm/10nm Pt/Ti as bottom electrode, and with photoetching,
Stripping technology forms hearth electrode figure；
(3): after removing photoresist, using superconducting RF, AlN piezoelectric membrane, AlN pressure being prepared with the sputtering condition of optimization
For conductive film as piezoelectric layer, thickness is about 1.8 μm, is etched later using diluted tetramethyl ammonium hydroxide solution as etching liquid
Piezoelectricity layer pattern；
(4): and then again using the Au top electrode of DC magnetron sputtering method deposition 300nm, Au top electrode is as upper layer electricity
Pole；
(5): finally etching SiN in the back photoetching of substrate and with reactive ion etching process4/SiO2Film is formed to be etched
Cavity window is lost, cavity window is air-gap；Again using the mixed solution of KOH solution and aqueous isopropanol as etching liquid, window is etched
Si piece substrate under mouthful, obtains back cavity, back cavity is air-gap.
Preferably, in step (5), air is inserted in the air-gap, the lower surface of the substrate is coated with one and leads
Electric elargol slurry, the surface mount of the conductive silver rubber cement have quartz glass plate that it is in 20 DEG C of constant temperature of ring after the two bonding
Solidified in border.
Preferably, the conductive silver rubber cement with a thickness of 40-60 μm.
(3) beneficial effect
The present invention provides a kind of piezo-electric resonators of narrow support frame high quality factor, have following the utility model has the advantages that originally
Invention is provided with support layer and highly-resistant material layer and low resistivity materials layer on the surface of substrate, first on the surface of substrate
Four silicon nitrides or silica are set as support layer to increase resonator machinery fastness, are then arranged in the bottom of support layer
Highly-resistant material layer and low resistivity materials layer, using highly-resistant material layer and low resistivity materials interlayer every setting and high impedance
Material layer and low resistivity materials layer form acoustic reflector to prevent sound wave or energy from being passed to substrate layer, and another angle is certain
Equivalent approximate zero impedance medium is realized in degree, and mechanical firmness, much stronger than general resonator, the present invention passes through
Support layer and highly-resistant material layer are set and low resistivity materials layer reinforces the mechanical fastness of resonator, additionally by high impedance
Material layer and low resistivity materials layer and air serve as reflecting medium, and the quality factor of resonator can be improved in this way.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
In figure: 1, substrate；2, quartz glass plate；3, conductive silver rubber cement；4, air-gap；5, support layer；6, highly-resistant material
Layer；7, low resistivity materials layer；8, bottom electrode；9, piezoelectric layer；10, upper electrode.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, it is proposed that following embodiments:
A kind of piezo-electric resonator of narrow support frame high quality factor, including substrate 1, support layer 5, bottom electrode 8, air-gap
4, upper electrode 10 and piezoelectric layer 9, the surface of the substrate 1 is provided with groove and the surface of the substrate 1 is fixed with the branch
Layer 5 is held, is formed between the support layer 5 and the groove filled with air in the air-gap 4 and the air-gap 4, it is described
The surface of support layer 5 is fixed with the bottom electrode 8, and the surface of the bottom electrode 8 is fixed with the piezoelectric layer 9, the pressure
The surface of electric layer 9 is fixed with the upper electrode 10, and the lower section of the support layer 5 is equipped with multiple highly-resistant material layers 6 and low
Impedance material layer 7, the highly-resistant material layer 6 and low resistivity materials layer 7 interval setting and the highly-resistant material layer 6 and
The number of plies of low resistivity materials layer 7 is identical, and the highly-resistant material layer 6 is fixed on the substrate 1, the low resistivity materials layer 7
Upper surface be fixed with the support layer 5.
In the present embodiment, the piezoelectric layer 9 is AIN piezoelectric membrane, and the substrate 1 is earth silicon material, the bottom
Material used in layer electrode 8 and upper electrode 10 is one of Au, Mo, W, Pt.
In the present embodiment, the air-gap 4 contacts the lower surface of the support layer 5 directly with air, and by sound
Wave energy is limited in workspace.
A kind of preparation method of the piezo-electric resonator of narrow support frame high quality factor according to above scheme, including such as
Lower step:
(1): using the Si piece of standard RCA technique cleaning twin polishing, Si piece is substrate material, is then pasted at interval
Then the highly-resistant material layer 6 and low resistivity materials layer 7 all use PECVD method to deposit one layer of 100nm/ on Si piece two sides
The SiN of 100nm thickness4/SiO2Film；
(2): and then use the Pt/Ti of DC magnetron sputtering method deposition 100nm/10nm as bottom electrode 8, and use up
It carves, stripping technology forms hearth electrode figure；
(3): after removing photoresist, using superconducting RF, AlN piezoelectric membrane, AlN pressure being prepared with the sputtering condition of optimization
For conductive film as piezoelectric layer 9, thickness is about 18 μm, is etched later using diluted tetramethyl ammonium hydroxide solution as etching liquid
Piezoelectricity layer pattern；
(4): and then again using the Au top electrode of DC magnetron sputtering method deposition 300nm, Au top electrode is as upper layer electricity
Pole 10；
(5): finally etching SiN in the back photoetching of substrate 1 and with reactive ion etching process4/SiO2Film, formed to
Etch cavity window, cavity window are air-gap 4；Again using the mixed solution of KOH solution and aqueous isopropanol as etching liquid, etching
Si piece substrate under window obtains back cavity, and back cavity is air-gap 4, inserts air in the air-gap 4, described
The lower surface of substrate 1 is coated with 40-60 μm of conductive silver rubber cement 3, and the surface mount of the conductive silver rubber cement 3 has quartz glass
It is in 20 DEG C of constant temperature of environment and solidifies after the two bonding by piece 2.
The present invention is provided with support layer 5 and highly-resistant material layer 6 and low resistivity materials layer 7 on the surface of substrate, first
Four silicon nitrides first are set on the surface of substrate 1 or silica increases resonator machinery fastness as support layer 5, are then existed
The bottom setting highly-resistant material layer 6 and low resistivity materials layer 7 of support layer 5, utilize highly-resistant material layer 6 and Low ESR material
The interval of the bed of material 7 is arranged and highly-resistant material layer 6 and low resistivity materials layer 7 form acoustic reflector to prevent sound wave or energy
Incoming substrate 1, another angle realizes equivalent approximate zero impedance medium to a certain extent, and mechanical firmness is much stronger than one
As resonator, the present invention reinforces resonator by setting support layer 5 and highly-resistant material layer 6 and low resistivity materials layer 7
Mechanical fastness, serve as reflecting medium additionally by highly-resistant material layer 6 and low resistivity materials layer 7 and air, in this way may be used
To improve the quality factor of resonator
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (6)
1. a kind of piezo-electric resonator of narrow support frame high quality factor, it is characterised in that: including substrate (1), support layer (5), bottom
Layer electrode (8), air-gap (4), upper electrode (10) and piezoelectric layer (9), the surface of the substrate (1) are provided with groove and described
The surface of substrate (1) is fixed with the support layer (5), and the air-gap (4) are formed between the support layer (5) and the groove
And air is filled in the air-gap (4), the surface of the support layer (5) is fixed with the bottom electrode (8), the bottom
The surface of electrode (8) is fixed with the piezoelectric layer (9), and the surface of the piezoelectric layer (9) is fixed with the upper electrode (10), institute
The lower section for stating support layer (5) is equipped with multiple highly-resistant material layers (6) and low resistivity materials layer (7), the highly-resistant material layer
(6) and low resistivity materials layer (7) interval is arranged and the number of plies of the highly-resistant material layer (6) and low resistivity materials layer (7)
Identical, the highly-resistant material layer (6) is fixed on the substrate (1), and the upper surface of the low resistivity materials layer (7) is fixed with
The support layer (5).
2. a kind of piezo-electric resonator of narrow support frame high quality factor according to claim 1, it is characterised in that: the pressure
Electric layer (9) is AIN piezoelectric membrane, and the substrate (1) is earth silicon material, the bottom electrode (8) and upper electrode (10)
Material used is one of Au, Mo, W, Pt.
3. a kind of piezo-electric resonator of narrow support frame high quality factor according to claim 1, it is characterised in that: the sky
Air gap (4) contacts the lower surface of the support layer (5) directly with air, and acoustic wave energy is limited in workspace.
4. a kind of preparation side of the piezo-electric resonator of narrow support frame high quality factor according to claim 1-3
Method, characterized by the following steps:
(1): using the Si piece of standard RCA technique cleaning twin polishing, Si piece is substrate material, is then pasted at interval described
Highly-resistant material layer (6) and low resistivity materials layer (7) then all use PECVD method to deposit one layer of 100nm/ on Si piece two sides
The SiN of 100nm thickness4/SiO2Film；
(2): then use DC magnetron sputtering method deposition 100nm/10nm Pt/Ti as bottom electrode (8), and with photoetching,
Stripping technology forms hearth electrode figure；
(3): after removing photoresist, using superconducting RF, AlN piezoelectric membrane being prepared with the sputtering condition of optimization, AlN piezoelectricity is thin
For film as piezoelectric layer (9), thickness is about 1.8 μm, is etched later using diluted tetramethyl ammonium hydroxide solution as etching liquid
Piezoelectricity layer pattern；
(4): and then again using the Au top electrode of DC magnetron sputtering method deposition 300nm, Au top electrode is as upper electrode
(10)；
(5): finally etching SiN in the back photoetching of substrate (1) and with reactive ion etching process4/SiO2Film is formed to be etched
Cavity window is lost, cavity window is air-gap (4)；Again using the mixed solution of KOH solution and aqueous isopropanol as etching liquid, etching
Si piece substrate under window, obtains back cavity, and back cavity is air-gap (4).
5. a kind of preparation method of the piezo-electric resonator of narrow support frame high quality factor according to claim 4, feature
It is: in step (5), air is inserted in the air-gap (4), the lower surface of the substrate (1) is coated with a conductive silver
The surface mount of rubber cement (3), the conductive silver rubber cement (3) has quartz glass plate (2), and after the two bonding, it is in constant temperature 20
DEG C environment in solidified.
6. a kind of preparation method of the piezo-electric resonator of narrow support frame high quality factor according to claim 5, feature
Be: the conductive silver rubber cement (3) with a thickness of 40-60 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910380938.3A CN110098816A (en) | 2019-05-08 | 2019-05-08 | A kind of piezo-electric resonator of narrow support frame high quality factor |
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| CN201910380938.3A CN110098816A (en) | 2019-05-08 | 2019-05-08 | A kind of piezo-electric resonator of narrow support frame high quality factor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114094970A (en) * | 2022-01-20 | 2022-02-25 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
| US11463070B2 (en) | 2022-01-18 | 2022-10-04 | Shenzhen Newsonic Technologies Co., Ltd. | FBAR structure and manufacturing method of same |
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| CN101951238A (en) * | 2010-07-30 | 2011-01-19 | 中国科学院声学研究所 | Piezoelectric film bulk acoustic wave resonator |
| CN102291095A (en) * | 2011-04-27 | 2011-12-21 | 庞慰 | complex acoustic wave resonator |
| CN103942082A (en) * | 2014-04-02 | 2014-07-23 | 南阳理工学院 | Complier optimization method for eliminating redundant storage access operations |
| CN105958956A (en) * | 2016-04-26 | 2016-09-21 | 电子科技大学 | Novel film bulk acoustic resonator and production method thereof |
| CN106130501A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | III group-III nitride FBAR and wave filter |
-
2019
- 2019-05-08 CN CN201910380938.3A patent/CN110098816A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101951238A (en) * | 2010-07-30 | 2011-01-19 | 中国科学院声学研究所 | Piezoelectric film bulk acoustic wave resonator |
| CN102291095A (en) * | 2011-04-27 | 2011-12-21 | 庞慰 | complex acoustic wave resonator |
| CN103942082A (en) * | 2014-04-02 | 2014-07-23 | 南阳理工学院 | Complier optimization method for eliminating redundant storage access operations |
| CN105958956A (en) * | 2016-04-26 | 2016-09-21 | 电子科技大学 | Novel film bulk acoustic resonator and production method thereof |
| CN106130501A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | III group-III nitride FBAR and wave filter |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11463070B2 (en) | 2022-01-18 | 2022-10-04 | Shenzhen Newsonic Technologies Co., Ltd. | FBAR structure and manufacturing method of same |
| CN114094970A (en) * | 2022-01-20 | 2022-02-25 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
| CN114094970B (en) * | 2022-01-20 | 2022-05-17 | 深圳新声半导体有限公司 | Method for manufacturing film bulk acoustic wave resonator and resonator |
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Application publication date: 20190806 |