CN109246337B - Wafer-level lens module - Google Patents
Wafer-level lens module Download PDFInfo
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- CN109246337B CN109246337B CN201811023955.3A CN201811023955A CN109246337B CN 109246337 B CN109246337 B CN 109246337B CN 201811023955 A CN201811023955 A CN 201811023955A CN 109246337 B CN109246337 B CN 109246337B
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Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
Abstract
The invention relates to a wafer-level lens module, which comprises a wafer layer, a charge-coupled device image sensor, a lens group, a spacing component, an anti-reflection filter layer, a light shielding layer and an electromagnetic shielding layer, wherein the charge-coupled device image sensor is manufactured on the wafer layer by a wafer-level optical manufacturing process, the spacing component is arranged on the charge-coupled device image sensor, the lens group is formed by bonding a plurality of lenses, the edge of the lens group is plated with the anti-reflection filter layer, the anti-reflection filter layer is plated with the light shielding layer, the light shielding layer is chromium nitride, and the light shielding layer is coated with the electromagnetic shielding layer.
Description
Technical Field
The invention relates to the field of lens modules, in particular to a wafer-level lens module.
Background
The lens mount and the lens cone of the existing lens module are mainly made of PC, ABS or PTFE plastic, and the anti-electromagnetic interference capability is low, so that the lens module element is easily interfered by external electromagnetic waves to generate noise, the electromagnetic wave interference can cause poor imaging quality and cannot obtain clear images, and when the imaging resolution is high, the imaging quality caused by the interference of the external electromagnetic waves on the lens module element is more obviously influenced.
Disclosure of Invention
The present invention is directed to a wafer level lens module to solve the above problems.
The embodiment of the invention provides a wafer-level lens module, which comprises a wafer layer, a charge-coupled device image sensor, a lens group, a spacing component, an anti-reflection filter layer, a light shielding layer and an electromagnetic shielding layer, wherein the charge-coupled device image sensor is manufactured on the wafer layer by a wafer-level optical process;
preferably, the electromagnetic shielding paint is prepared from a filler: film-forming resin: diluent agent: coupling agent: the dispersant is prepared by mixing according to the mass ratio of 150:100: 30-50:1: 3;
preferably, the filler is surface modified MXene; the film-forming resin is epoxy resin; the coupling agent is a silane coupling agent; the dispersant is organic bentonite;
preferably, the surface modified MXene comprises an MXene carrier and a supporting layer, wherein the supporting layer comprises a zinc oxide phase, a carbon phase and a titanium dioxide phase;
further preferably, the MXene carrier is obtained by etching sintered titanium aluminum carbide by a hydrofluoric acid solution containing lithium ions; the carbon phase and the titanium dioxide phase are obtained by carrying out carbon dioxide high-temperature oxidation on MXene carriers; the zinc oxide phase is obtained by loading MXene carrier with zinc ions, reducing hydrazine hydrate and oxidizing carbon dioxide at high temperature;
further preferably, the hydrofluoric acid solution containing lithium ions is a concentrated hydrochloric acid solution dissolved with lithium fluoride, and the concentration of the lithium fluoride is 0.05 g/ml;
further preferably, the sintered titanium aluminum carbide is prepared by mixing titanium, aluminum and titanium carbide in a mass ratio of 5: 3: 20 is prepared by high-temperature sintering;
further preferably, the temperature of the high-temperature oxidation process of the carbon dioxide is 850 ℃, the heat preservation time is 60min, and the flow rate of the carbon dioxide is 150 ml/min.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
the anti-reflection filter layer, the shading layer and the electromagnetic shielding layer are arranged at the edge of the lens group, so that better optical performance is obtained, and external electromagnetic wave interference can be effectively prevented; through the modification design of the MXene surface microstructure, a larger surface interface is provided, the contact resistance caused by stacking and size effects is reduced, the conductivity is enhanced, the propagation path of electromagnetic waves is increased, the attenuation of the electromagnetic waves is promoted, the impedance matching is improved, the effective absorption frequency band is widened, and the electromagnetic absorption performance is improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The invention is further illustrated by means of the attached drawings, but the embodiments in the drawings do not constitute any limitation to the invention, and for a person skilled in the art, other drawings can be obtained on the basis of the following drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a lens module according to the present invention.
Description of the drawings: 1-a lens group; 2-a charge coupled device image sensor; 3-a wafer layer; 4-a spacer assembly; 5-an antireflective filter layer; 6-a light shielding layer; 7-electromagnetic shielding layer.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Electromagnetic radiation, also called electronic smoke, is a phenomenon that energy is emitted to a space in an electromagnetic wave form, the rapid development of the electronic information industry greatly promotes the popularization of wireless communication equipment and high-frequency electronic devices, and causes increasingly serious electromagnetic interference and electromagnetic pollution, so that the electromagnetic radiation not only interferes with the normal operation of electronic components, but also causes potential health hazards to human bodies, is listed as a fourth pollution source following water sources, atmosphere and noise, and long-term excessive electromagnetic radiation can cause damages to human reproduction, nerves, immune systems and the like.
The electromagnetic shielding material can absorb and reflect electromagnetic waves emitted by electronic equipment to a certain extent, people develop various electromagnetic shielding materials to eliminate electromagnetic pollution, the traditional electromagnetic shielding material is mostly made of metals such as copper and aluminum, the application of the electromagnetic shielding material in a plurality of fields such as movable equipment, wearable electronic products and human body protection is limited by high density and large volume, and the paraffin-based composite material, silicon carbide sponge and graphene-polydimethylsiloxane composite sponge covering nickel-cobalt metal fibers on biological carbon fibers have the defects of high density and wide use thickness, so that the development of the electromagnetic shielding material and the electromagnetic shielding product which are light, high in toughness and strong in processability has important research significance and practical application value.
MXene is a novel two-dimensional material with a graphene-like structure, has special metal-like characteristics and a layered structure, has potential application in the field of electromagnetic shielding, but has unsatisfactory wave absorption performance, is related to an interaction mechanism of the material and electromagnetic waves and impedance matching capacity, is developed into a light MXene material with wide absorption bandwidth and high absorption rate, and needs to be subjected to microstructure design surface modification to improve the wave absorption performance of the material.
The embodiment of the invention relates to a wafer-level lens module, which comprises a wafer layer, a charge coupled device image sensor, a lens group, a spacing component, an anti-reflection filter layer, a light shielding layer and an electromagnetic shielding layer, wherein the charge coupled device image sensor is manufactured on the wafer layer by a wafer-level optical process;
preferably, the electromagnetic shielding paint is prepared from a filler: film-forming resin: diluent agent: coupling agent: the dispersant is prepared by mixing according to the mass ratio of 150:100: 30-50:1: 3;
preferably, the filler is surface modified MXene; the film-forming resin is epoxy resin; the coupling agent is a silane coupling agent; the dispersant is organic bentonite;
preferably, the surface modified MXene comprises an MXene carrier and a supporting layer, wherein the supporting layer comprises a zinc oxide phase, a carbon phase and a titanium dioxide phase;
further preferably, the MXene carrier is obtained by etching sintered titanium aluminum carbide by a hydrofluoric acid solution containing lithium ions; the carbon phase and the titanium dioxide phase are obtained by carrying out carbon dioxide high-temperature oxidation on MXene carriers; the zinc oxide phase is obtained by loading MXene carrier with zinc ions, reducing hydrazine hydrate and oxidizing carbon dioxide at high temperature;
carbon dioxide is used as an oxidant, the oxidation condition is controlled, the MXene carrier is partially oxidized while the lamellar structure is kept, a carbon phase and a titanium dioxide phase are generated on the surface of the MXene carrier, the conductivity and impedance matching are improved, and the dipole polarization is increased by intrinsic defects; the surface of the MXene carrier obtained by etching is provided with an electron-rich group, the electron-rich group is easy to be combined with zinc metal ions in an electrostatic or complexing mode, the group position is reduced, the electric conduction is enhanced, the metal is reduced to be metal loaded on the surface of the MXene carrier, zinc oxide is a direct band gap wide bandgap semiconductor, has a low dielectric constant, can form a plurality of scale-like heterogeneous interfaces with a titanium dioxide phase, a carbon phase and the MXene carrier, shows high dielectric loss, and prevents electrons from effectively migrating in the structure, under the action of electromagnetic waves, a large amount of charges excited on the surface of the material are gathered at the interface heterogeneous junctions to form a space charge polar region, a scattering effect is formed on the electron migration, a dielectric relaxation dipole interaction and a related effect are generated, the electromagnetic waves are dissipated, and the performance of the MXene carrier is superior to that of a single phase or the simple mixing of all components;
further preferably, the hydrofluoric acid solution containing lithium ions is a concentrated hydrochloric acid solution dissolved with lithium fluoride, and the concentration of the lithium fluoride is 0.05 g/ml;
further preferably, the sintered titanium aluminum carbide is prepared by mixing titanium, aluminum and titanium carbide in a mass ratio of 5: 3: 20 is prepared by high-temperature sintering;
further preferably, the temperature of the high-temperature oxidation process of the carbon dioxide is 850 ℃, the heat preservation time is 60min, and the flow rate of the carbon dioxide is 150 ml/min.
The present invention will be described in detail by way of examples. It is also to be understood that the following examples are illustrative of the present invention and are not to be construed as limiting the scope of the invention, and that certain insubstantial modifications and adaptations of the invention by those skilled in the art may be made in light of the above teachings. The specific process parameters and the like of the following examples are also only one example of suitable ranges, i.e., those skilled in the art can select the appropriate ranges through the description herein, and are not limited to the specific values exemplified below.
Example 1
In the embodiment, a wafer level lens module, includes wafer level, charge-coupled device image sensor, lens group, spacer element, antireflection filter layer, light shield layer, electromagnetic shield layer, charge-coupled device image sensor is made on the wafer level by wafer level optical process, the spacer element is located on the charge-coupled device image sensor, lens group is formed by the laminating of multi-disc lens, and the antireflection filter layer has been plated at the edge of lens group, has plated the light shield layer on the antireflection filter layer, the light shield layer is chromium nitride, and the coating has electromagnetic shield layer on the light shield layer, the electromagnetic shield layer is made by electromagnetic shield coating drying, electromagnetic shield coating's preparation includes following step:
step 1, respectively weighing 5 parts of titanium powder, 3 parts of aluminum powder and 20 parts of titanium carbide powder which are sieved by a 300-mesh sieve, dispersing the weighed powder in absolute ethyl alcohol, putting the powder into a ball mill for ball milling for 24 hours, drying a sample, pressing the sample into a graphite mold, heating the sample to 1400 ℃ under the protection of argon gas, keeping the temperature for calcining for 2 hours, naturally cooling the sample to room temperature to obtain titanium aluminum carbide sintered blocks, and crushing, grinding and sieving the titanium aluminum carbide sintered blocks by a 500-mesh sieve to obtain titanium aluminum carbide powder;
step 4, weighing 0.2g of zinc-loaded MXene carrier, heating to 600 ℃ under the argon protection atmosphere, preserving heat for 45min, heating to 750 ℃, preserving heat for 15min, switching the atmosphere to be carbon dioxide gas, keeping the gas flow at 150ml/min, preserving heat for 60min, switching the atmosphere to be argon, and obtaining surface modified MXene after self-cooling to room temperature;
and 5, mixing the surface modified MXene with epoxy resin, ethyl acetate, a silane coupling agent and organic bentonite according to a mass ratio of 200:100:50:1:3 to prepare the electromagnetic shielding coating.
Example 2
In the embodiment, a wafer level lens module, includes wafer level, charge-coupled device image sensor, lens group, spacer element, antireflection filter layer, light shield layer, electromagnetic shield layer, charge-coupled device image sensor is made on the wafer level by wafer level optical process, the spacer element is located on the charge-coupled device image sensor, lens group is formed by the laminating of multi-disc lens, and the antireflection filter layer has been plated at the edge of lens group, has plated the light shield layer on the antireflection filter layer, the light shield layer is chromium nitride, and the coating has electromagnetic shield layer on the light shield layer, the electromagnetic shield layer is made by electromagnetic shield coating drying, electromagnetic shield coating's preparation includes following step:
step 1, respectively weighing 5 parts of titanium powder, 3 parts of aluminum powder and 20 parts of titanium carbide powder which are sieved by a 300-mesh sieve, dispersing the weighed powder in absolute ethyl alcohol, putting the powder into a ball mill for ball milling for 24 hours, drying a sample, pressing the sample into a graphite mold, heating the sample to 1400 ℃ under the protection of argon gas, keeping the temperature for calcining for 2 hours, naturally cooling the sample to room temperature to obtain titanium aluminum carbide sintered blocks, and crushing, grinding and sieving the titanium aluminum carbide sintered blocks by a 500-mesh sieve to obtain titanium aluminum carbide powder;
step 4, weighing 0.2g of zinc-loaded MXene carrier, heating to 600 ℃ under the argon protection atmosphere, preserving heat for 45min, heating to 750 ℃, preserving heat for 15min, switching the atmosphere to be carbon dioxide gas, keeping the gas flow at 150ml/min, preserving heat for 60min, switching the atmosphere to be argon, and obtaining surface modified MXene after self-cooling to room temperature;
and step 5, mixing the surface modified MXene with epoxy resin, ethyl acetate, a silane coupling agent and organic bentonite according to the mass ratio of 150:100:30:1:3 to prepare the electromagnetic shielding coating.
Comparative example 1
And (3) mixing the product obtained in the step (2) with epoxy resin, ethyl acetate, a silane coupling agent and organic bentonite according to the mass ratio of 200:100:50:1:3 to obtain the coating.
And (3) experimental test:
the shielding effectiveness of the materials tested by SJ50524-1995 standard was measured at 100X 103—1.5×109Frequency range of kHzThe electromagnetic shielding performance of the electromagnetic shielding film prepared from the electromagnetic shielding paint of the embodiment was tested, and the conductivity of the electromagnetic shielding film prepared from the electromagnetic shielding paint of the embodiment was tested by using a comprehensive physical property measurement system, and the test results are shown in table 1.
Table 1 example test results
| Conductivity (S/cm) | Shielding Performance (dB) | |
| Example 1 | 18 | 48-55 |
| Example 2 | 15 | 28-34 |
| Comparative example 1 | 2 | 10-15 |
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, but rather as the subject matter of the invention is to be construed in all aspects and as broadly as possible, and all changes, equivalents and modifications that fall within the true spirit and scope of the invention are therefore intended to be embraced therein.
Claims (4)
1. A wafer-level lens module is characterized by comprising a wafer layer, a charge-coupled device image sensor, a lens group, a spacing component, an anti-reflection filter layer, a light shielding layer and an electromagnetic shielding layer, wherein the charge-coupled device image sensor is manufactured on the wafer layer by a wafer-level optical manufacturing process, the spacing component is arranged on the charge-coupled device image sensor, the lens group is formed by bonding a plurality of lenses, the edge of the lens group is plated with the anti-reflection filter layer, the anti-reflection filter layer is plated with the light shielding layer, the light shielding layer is made of chromium nitride, the light shielding layer is coated with the electromagnetic shielding layer, and the electromagnetic shielding layer is prepared by coating and drying an electromagnetic shielding coating; the electromagnetic shielding coating is prepared from the following components in percentage by weight: film-forming resin: diluent agent: coupling agent: the dispersant is prepared by mixing according to the mass ratio of 150:100: 30-50:1: 3; the filler is surface modified MXene; the film-forming resin is epoxy resin; the coupling agent is a silane coupling agent; the dispersant is organic bentonite;
the surface modified MXene comprises an MXene carrier and a loading layer, wherein the loading layer comprises a zinc oxide phase, a carbon phase and a titanium dioxide phase; the MXene carrier is obtained by etching sintered titanium aluminum carbide by using a hydrofluoric acid solution containing lithium ions; the carbon phase and the titanium dioxide phase are obtained by carrying out carbon dioxide high-temperature oxidation on MXene carriers; the zinc oxide phase is obtained by loading MXene carrier with zinc ions, reducing hydrazine hydrate and oxidizing carbon dioxide at high temperature;
the preparation method of the electromagnetic shielding coating comprises the following steps:
step 1, respectively weighing 5 parts of titanium powder, 3 parts of aluminum powder and 20 parts of titanium carbide powder which are sieved by a 300-mesh sieve, dispersing the weighed powder in absolute ethyl alcohol, putting the powder into a ball mill for ball milling for 24 hours, drying a sample, pressing the sample into a graphite mold, heating the sample to 1400 ℃ under the protection of argon gas, keeping the temperature for calcining for 2 hours, naturally cooling the sample to room temperature to obtain titanium aluminum carbide sintered blocks, and crushing, grinding and sieving the titanium aluminum carbide sintered blocks by a 500-mesh sieve to obtain titanium aluminum carbide powder;
step 2, adding 1g of LiF into a cold PTFE container, slowly adding 20ml of 10mol/L hydrochloric acid solution, stirring for 30min, weighing 1g of titanium aluminum carbide powder, controlling the temperature to be below 50 ℃, slowly adding the solution for multiple times, keeping the temperature at 35 ℃ for 72h after the addition is finished, shaking once every 6h, after the reaction is finished, repeatedly centrifuging and washing until the washing solution is neutral, and drying and precipitating to obtain an MXene carrier;
step 3, adding 2g of MXene carrier prepared in the step 2 into 100ml of deionized water, carrying out ultrasonic crushing treatment for 2min, wherein the ultrasonic power is 270W, and the ultrasonic time is as follows: the stop time was 1 s: 2s, then adding 0.86g of anhydrous zinc chloride and 0.36g of hexadecyl trimethyl ammonium bromide, stirring for dissolving, adjusting the pH value of the solution to 10 by ammonia water, stirring for 30min to obtain a suspension A, adding 0.18g of hexadecyl trimethyl ammonium bromide and 5g of hydrazine hydrate into 50ml of deionized water to obtain a solution B, slowly adding the solution B into the suspension A, stirring for 2h, alternately washing for multiple times by using anhydrous ethanol and distilled water, and drying at 50 ℃ to obtain the zinc-loaded MXene carrier;
step 4, weighing 0.2g of zinc-loaded MXene carrier, heating to 600 ℃ in an argon protective atmosphere, preserving heat for 45min, heating to 750 ℃, preserving heat for 15min, switching the atmosphere to be carbon dioxide gas, keeping the gas flow at 150ml/min, preserving heat for 60min, switching the atmosphere to be argon, and obtaining surface modified 1 MXene after self-cooling to room temperature;
and 5, mixing the surface modified MXene with epoxy resin, ethyl acetate, a silane coupling agent and organic bentonite according to a mass ratio of 200:100:50:1:3 to prepare the electromagnetic shielding coating.
2. The wafer-level lens module as claimed in claim 1, wherein the hydrofluoric acid solution containing lithium ions is a concentrated hydrochloric acid solution dissolved with lithium fluoride, and the concentration of lithium fluoride is 0.05 g/ml.
3. The wafer level lens module as recited in claim 1, wherein the sintered titanium aluminum carbide is prepared by mixing titanium, aluminum and titanium carbide in a mass ratio of 5: 3: 20 is prepared by high-temperature sintering.
4. The wafer level lens module of claim 1, wherein the process temperature of the carbon dioxide high temperature oxidation is 850 ℃, the holding time is 60min, and the flow rate of the carbon dioxide is 150 ml/min.
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| CN102036541A (en) * | 2009-09-25 | 2011-04-27 | 鸿富锦精密工业（深圳）有限公司 | Electromagnetic shielding film and lens module with same |
| CN108117811A (en) * | 2018-01-25 | 2018-06-05 | 惠州市栢诗新材料有限公司 | A kind of graphene-silicon electromagnetic shielding filler and electromagnetic screen coating |
| CN108264885A (en) * | 2018-01-18 | 2018-07-10 | 北京林业大学 | A kind of electromagnetic shielding film of mechanics enhancing and preparation method thereof |
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| CN102036541A (en) * | 2009-09-25 | 2011-04-27 | 鸿富锦精密工业（深圳）有限公司 | Electromagnetic shielding film and lens module with same |
| CN108264885A (en) * | 2018-01-18 | 2018-07-10 | 北京林业大学 | A kind of electromagnetic shielding film of mechanics enhancing and preparation method thereof |
| CN108117811A (en) * | 2018-01-25 | 2018-06-05 | 惠州市栢诗新材料有限公司 | A kind of graphene-silicon electromagnetic shielding filler and electromagnetic screen coating |
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