CN109216407A - OLED display panel and preparation method thereof - Google Patents

OLED display panel and preparation method thereof Download PDF

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Publication number
CN109216407A
CN109216407A CN201710526518.2A CN201710526518A CN109216407A CN 109216407 A CN109216407 A CN 109216407A CN 201710526518 A CN201710526518 A CN 201710526518A CN 109216407 A CN109216407 A CN 109216407A
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layer
film
thin
pixel defining
pixel
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CN109216407B (en
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敖伟
高峰
王明晖
姜海峰
王岩
彭兆基
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Kunshan Guoxian Photoelectric Co Ltd
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Kunshan Guoxian Photoelectric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The present invention provides a kind of OLED display panels and preparation method thereof.Boss is provided at least partly pixel defining layer, thin-film encapsulation layer includes the first film encapsulated layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third thin-film encapsulation layer are inorganic film, second thin-film encapsulation layer is organic film, the boss top is all that the third thin-film encapsulation layer of inorganic film is in contact with the first film encapsulated layer, the anti-shearing force that OLED display panel can be improved, be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift.

Description

OLED display panel and preparation method thereof
Technical field
The present invention relates to field of display technology, in particular to a kind of OLED display panel and preparation method thereof.
Background technique
In recent years, as a kind of new flat-panel monitor, display of organic electroluminescence is received more and more attention. The core component of display of organic electroluminescence is organic electroluminescence device (OLED, also known as Organic Light Emitting Diode). OLED principle of luminosity be certain voltage driving under, electrons and holes respectively from cathode and anode be injected into electron transfer layer and Hole transmission layer, electrons and holes pass through electron transfer layer respectively and hole transmission layer moves to luminescent layer, and in luminescent layer It meets, form exciton and excites light emitting molecule, visible light is issued by radiative relaxation.
The characteristics of OLED display panel is frivolous, wide viewing angle, low in energy consumption, fast response time, achievable Flexible Displays etc.. Since it is active illuminant device, it is considered to have very big advantage in terms of showing high-resolution high speed video, and most Just developed in recent years towards practical direction.However, due to the luminescent layer for playing light-emitting function in OLED display panel, to water The external environmental factors such as vapour and oxygen are very sensitive, if OLED display panel to be exposed to the environment of steam or oxygen In, device performance can be made sharply to decline or damage completely.In order to improve the service life of OLED and the stability of device, Need to completely cut off by good encapsulation the steam and oxygen of surrounding.
Traditional glass cover-plate or metal cover board encapsulation have been carried out preferable effect, but are not fully appropriate for Important or potential application, such as top emitting OLED display technology, flexibility OLED display technology or flexibility OPV etc..For This industry develops thin film encapsulation technology, using one or more layers thin-film barrier water oxygen, the not road of shielding light outgoing or incidence Diameter nor affects on the flexible of substrate.But inventor is the study found that the adhesion strength between thin-film encapsulation layer and cathode is weaker, Especially in flexible display panels bending process, between each film layer between thin-film encapsulation layer and cathode and functional layer inside Even there is the phenomenon that curling, cracking, leads to the ability decline for obstructing water oxygen, affect the performance of luminescent layer, and then affect The service life of OLED display panel and performance.
Summary of the invention
It is an object of the present invention to solve in OLED display panel between thin-film encapsulation layer and cathode and in functional layer Occur separating between each film layer in portion or the problem of positional shift.
To solve the above-mentioned problems, on the one hand, a kind of OLED display panel is provided, including substrate and is formed in described Hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer on substrate；The pixel defining layer is formed with several Pixel openings, hearth electrode, functional layer and top electrode in the pixel openings constitute pixel unit；The OLED is aobvious Show that panel further includes the boss being formed at least partly pixel defining layer, the thin-film encapsulation layer includes the first film encapsulation Layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third thin-film encapsulation layer are inorganic Film layer, second thin-film encapsulation layer are organic film, and the third thin-film encapsulation layer and the first film above the boss encapsulate Layer is in contact.
Optionally, cross-sectional width of the boss close to one end of pixel defining layer is less than it far from pixel defining layer The cross-sectional width of one end, constitutes recess between the pixel defining layer and boss, the thin-film encapsulation layer fills the recess.
Optionally, the boss perpendicular to substrate surface and is parallel to the section of pixel defining layer width direction in ladder Shape.
Optionally, cross-sectional width of the pixel defining layer close to one end of substrate is greater than its one end far from substrate Cross-sectional width.
Optionally, boss openings are also formed in the boss, the boss openings are at least partially through the boss.
Optionally, the OLED display panel further includes the planarization layer being formed on the substrate, the hearth electrode shape On planarization layer described in Cheng Yu；The boss openings also extend through the pixel defining layer of segment thickness or full depth, alternatively, institute It states boss openings and also extends through the pixel defining layer of full depth and the planarization layer of segment thickness or full depth.
Optionally, one or more boss are formed on each pixel unit.
Optionally, the boss is identical as the material of the pixel defining layer.
Optionally, the pixel defining layer and the overall thickness of boss are between 2 μm -8 μm.
On the other hand, a kind of OLED display panel preparation method is provided, comprising: provide a substrate；And in the substrate Upper formation hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer, the pixel defining layer are formed with several pictures Element opening, and several boss are also formed in the OLED display panel, the thin-film encapsulation layer includes the first film encapsulation Layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third thin-film encapsulation layer are inoranic membrane Layer, second thin-film encapsulation layer are organic film, and the third thin-film encapsulation layer and the first film above the boss encapsulate Layer is in contact.
Compared with prior art, the present invention is provided with boss at least partly pixel defining layer, and thin-film encapsulation layer includes The first film encapsulated layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third film envelope Dress layer is inorganic film, and second thin-film encapsulation layer is organic film, and the boss top is all that the third of inorganic film is thin Film encapsulated layer is in contact with the first film encapsulated layer, and the anti-shearing force of OLED display panel can be improved, and film envelope is reduced or avoided Occur between dress layer and cathode and inside functional layer separating between each film layer or positional shift.
Detailed description of the invention
Fig. 1 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention one；
Fig. 2 a~2f is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 1；
Fig. 3 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention two；
Fig. 4 a~4b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 3；
Fig. 5 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention three；
Fig. 6 a~6b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 5；
Fig. 7 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention four；
Fig. 8 a~8b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 7；
Fig. 9 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention five；
Figure 10 a~10b is the diagrammatic cross-section in OLED display panel preparation process shown in Fig. 9；
Figure 11 is a kind of schematic top plan view of OLED display panel in the embodiment of the present invention five；
Figure 12 is the schematic top plan view of another OLED display panel in the embodiment of the present invention five；
Figure 13 is the diagrammatic cross-section of another OLED display panel in the embodiment of the present invention five；
Figure 14 is the diagrammatic cross-section of another OLED display panel in the embodiment of the present invention five；
Figure 15 is the distribution schematic diagram being recessed in the embodiment of the present invention six；
Figure 16 is the schematic diagram that laser boring is carried out in the embodiment of the present invention six；
Figure 17 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention seven；
Figure 18 a~18b is the diagrammatic cross-section in OLED display panel preparation process shown in Figure 17；
Figure 19 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention eight；
Figure 20 a~20b is the diagrammatic cross-section in OLED display panel preparation process shown in Figure 19；
Figure 21 is the schematic diagram of the dykes and dams of OLED display panel in the embodiment of the present invention nine；
Numbering in the drawing explanation:
100- substrate；110- hearth electrode；120- pixel defining layer；120 '-holes；130- pixel openings；140- functional layer； 150- top electrode；160- thin-film encapsulation layer；161- the first film encapsulated layer；The second thin-film encapsulation layer of 162-；163- third film Encapsulated layer；The 4th thin-film encapsulation layer of 164-；The 5th thin-film encapsulation layer of 165-；The 6th thin-film encapsulation layer of 166-；The 7th film of 167- Encapsulated layer；The 8th thin-film encapsulation layer of 168-；170- recess；The side wall of 170a, 170b- recess；The bottom wall of 170c- recess；180- Boss；The first dykes and dams of 191-；The second dykes and dams of 192-；200- hard mask layer；200 '-patterned hard mask layers；210- is graphical Photoresist layer.
Specific embodiment
In the background technology it has been already mentioned that functional layer in OLED display panel to the external environments such as steam and oxygen because Element is very sensitive, if the functional layer in OLED display panel is directly exposed in the environment of steam and oxygen, can make OLED display panel performance sharply declines or damage completely.Thus, encapsulate most important for OLED device, multilayer Thin-film package (TFE) technology has preferable development prospect as a kind of novel OLED encapsulation method.However, inventor grinds Study carefully discovery, since thin-film encapsulation layer and top electrode adhesion strength below are poor, especially in flexible display panels, drawing is answered Under the alternating action of power and compression, lead to the separation or positional shift and OLED function of thin-film encapsulation layer and lower section film layer Separation or positional shift occurs between the internal each film layer of layer, to cause the premature failure of encapsulation, shortens the longevity of display device Life.
Based on the studies above, the embodiment of the present invention provides a kind of OLED display panel, including substrate and is formed in described Hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer on substrate.The pixel defining layer is formed with several Pixel openings, hearth electrode, functional layer and top electrode in several pixel openings constitute several pixel units.Institute Stating OLED display panel further includes the boss being formed at least partly pixel defining layer, and the thin-film encapsulation layer includes first Thin-film encapsulation layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third thin-film package Layer is inorganic film, and second thin-film encapsulation layer is organic film, the third thin-film encapsulation layer and first above the boss Thin-film encapsulation layer is in contact, and the anti-shearing force of OLED display panel can be improved, be reduced or avoided between thin-film encapsulation layer and cathode And occur between each film layer separating inside functional layer or positional shift.
Wherein, cross-sectional width of the boss close to one end of pixel defining layer is less than its one far from pixel defining layer The cross-sectional width at end, constitutes recess between the pixel defining layer and boss, the thin-film encapsulation layer fills the recess.Into One step, the boss is perpendicular to substrate surface and is parallel to the section of pixel defining layer width direction in inverted trapezoidal.
Wherein, cross-sectional width of the pixel defining layer close to one end of substrate is greater than cutting for its one end far from substrate Face width.
Wherein, boss openings are also formed in the boss, the boss openings are at least partially through the boss.Into One step, the OLED display panel further includes the planarization layer being formed on the substrate, and the hearth electrode is formed in described On planarization layer；The boss openings also extend through the pixel defining layer of segment thickness or full depth, alternatively, the boss is opened Mouth also extends through the pixel defining layer of full depth and the planarization layer of segment thickness or full depth.
Wherein, one or more boss are formed on each pixel unit.
Wherein, the boss can be identical with the material of the pixel defining layer, can not also be identical.
Wherein, the pixel defining layer and the overall thickness of boss are between 2 μm -8 μm.
The embodiment of the present invention also provides a kind of OLED display panel preparation method, comprising:
One substrate is provided；And
Hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer, the pixel are formed on the substrate Definition layer is formed with several pixel openings, and several boss are also formed at the pixel defining layer, the thin-film encapsulation layer packet Include the first film encapsulated layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third film Encapsulated layer is inorganic film, and second thin-film encapsulation layer is organic film, the third thin-film encapsulation layer above the boss with The first film encapsulated layer is in contact.
Below in conjunction with the drawings and specific embodiments to OLED display panel proposed by the present invention and its packaging method, OLED Display device is described in further detail.According to following explanation and claims, advantages and features of the invention will be more clear Chu.
It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to it is convenient, Lucidly aid in illustrating the purpose of the embodiment of the present invention.Wherein, layer, film, panel, region are for the sake of clarity exaggerated Thickness.Also, in order to illustrate more clearly of the present invention, the component for being not directed to explanation is omitted from attached drawing, and identical attached drawing mark Note indicates same parts in the text.
It should be understood that it can be straight when the element of such as layer, film, region or substrate is referred to as at another element "upper" It connects on another element, or insertion element also may be present.In contrast, when element is referred to as " direct " in another element Insertion element is not present in "upper".
Embodiment one
Fig. 1 is the diagrammatic cross-section of OLED display panel in the present embodiment.As shown in Figure 1, the OLED display panel includes Substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel defining layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
The substrate material of substrate 100 can be quartz, glass, metal, resin etc., wherein resin substrates include but unlimited In polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PBN), Polycarbonate resin.Flexible substrate is then preferably used for flexible display apparatus, such as polyimides (PI) substrate.In addition, Substrate 100 is preferably provided with the good barrier property for water and gas, simultaneously for substrate for the device of bottom emission type The good transparency, i.e., the light-transmissive substrate in visible wavelength range should be also equipped with.
Hearth electrode 110 is formed on substrate 100, such as respectively as red pixel cell, green pixel cell and blue The anode of pixel unit.Hearth electrode material composition may include such as chromium (Cr), golden (Au), platinum (Pt), nickel (Ni), copper (Cu), The simple substance or alloy of the metallic element of tungsten (W), aluminium (Al) and silver (Ag) etc..Selected metallic element may come from On enumerate, but be not limited to that range above.Hearth electrode 110 can also be formed by the sull of electrically conducting transparent, example Such as the transparent conductive film as composed by indium tin oxide (ITO), indium-zinc oxide (InZnO), zinc oxide (ZnO).
Pixel defining layer 120 is used to define the shapes and sizes of luminous zone (pixel region).In the present embodiment, the pixel Definition layer 120 is single layer structure, is formed by polyimides (PI) preparation.When it is implemented, the pixel defining layer 120 can also Laminated construction is thought, for example, pixel defining layer 120 preferably includes two separate layers, often when preparing functional layer using solwution method A separate layer is all made of organic material preparation, such as is made of one layer of lyophily material and one layer of lyophobicity organic material, and dredges Fluidity organic material is located at upper layer, and such structure design can not only make full use of lyophobicity in pixel defining layer organic The lyophoby effect guidance dripping drops of material accurately flow into pixel region, avoid and alter color and short circuit between pixel, are in simultaneously The lyophily organic material of pixel defining layer bottom and the good wellability for the liquid for forming hole injection layer can be effectively ensured Liquid is sprawled to form good hole injection layer film.
Pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED display panel includes luminous zone And non-light-emitting area, the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and non-light-emitting area, pixel openings 130 are right The region answered is luminous zone, and the region outside pixel openings 130 is non-light-emitting area.Pixel defining layer 120 is usually latticed knot Structure.Functional layer 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set in pixel defining layer 120 Top, however be only that 130 corresponding part of pixel openings shines, constitute luminous zone.Preferably, pixel defining layer 120 is close to base The cross-sectional width (aperture) of one end (bottom end) of plate 100 is greater than the cross-sectional width of its one end (top) far from substrate 100, this Sample can guarantee that the top electrode 150 being subsequently formed continuously is covered on the side wall of pixel defining layer 120, that is, guarantee cathode Continuity.In the present embodiment, pixel defining layer 120 is perpendicular to substrate surface and is parallel to cutting for pixel defining layer width direction Face (longitudinal section) is trapezoid, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that In specific implementation, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the pixel defining layer 120 Longitudinal section be also possible to the acclive shape of the tool other than trapezoid, between the side wall and bottom wall of the pixel defining layer 120 Angle is, for example, that that is, avoidable gradient is excessive and influences the vapor deposition of top electrode, and it is too small to can avoid the gradient between 30~80 degree And pixel defining layer is made to occupy excessive area.
Functional layer 140 can have multilayered structure, in addition to guaranteeing that organic light emitting display panel normal luminous display institute is required Luminescent layer except, based on the considerations of product cost and light emission luminance and luminous efficiency, those skilled in the art are according to reality Other film layers are optionally arranged in product demand, for example, further include for balance electronic and the electron transfer layer in hole and Hole transmission layer, and injected electrons implanted layer and hole injection layer for enhancing electrons and holes.Usual substrate 100 Upper mainly to form red pixel cell, green pixel cell and blue pixel cells, each pixel unit respectively includes sequentially Ground is layered in hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on substrate 100.Its In, luminescent layer is set in pixel openings 130, and other film layers (hole injection layer, hole transmission layer, electron transfer layer and Electron injecting layer) it can choose and be patterned, it also can choose without patterning process, but entire film layer carries out Preparation, to save exposure mask cost, simplification of flowsheet.
Wherein, hole injection layer is used to improve the injectability in hole and has and carries out to hearth electrode (anode) surface Modification is to play the role of buffer layer.The thickness of hole injection layer can be 5nm~100nm, and preferably with a thickness of 8nm~ 50nm.The thickness of hole transmission layer depends on the overall structure of device, but it is preferably with a thickness of 10nm~200nm, more excellent Choosing is 15nm~150nm.The example for forming the polymer material of hole transmission layer includes the luminous material for dissolving in organic solvent Material, such as polyvinylcarbazole and its derivative, polyfluorene and its derivative, Polyaniline and its derivative, polysilane and its derivative In object, main chain or side chain with arylamine structure polyoxy silane derivative, polythiophene and its derivative and polypyrrole and its Derivative etc..Hole transmission layer can be derived from range as above, and however, it is not limited to this.Luminescent layer is hole and electronics in electricity It is compound under field action to generate exciton and luminous region.The thickness of luminescent layer depends on needed for the overall performance of device, but its is excellent Choosing with a thickness of 10nm~200nm, be more preferably 15nm~100nm.Form red light emitting layer, green light emitting layer and indigo plant The material of color luminescent layer can be small molecule material and be also possible to high molecular material.For small molecule systems, luminescent layer Both it can be prepared using vapor deposition mode or be prepared using solwution method, for solwution method, small molecule is usually to be used as object, Such as the mode in polymer body is entrained in shine.And polymer typically uses solution legal system due to self character It is standby.The example of light emitting polymer includes that polyfluorene and its derivative, poly (phenylenevinylene) derivative, polyphenylene are derivative Object, polyvinylcarbazole derivative, the confused derivative of poly- thiophene；The example of small molecule emitter material includes perylene pigment, cumarin Pigment, rhodamine pigment, fluorescein pigment, diene or polyenoid analog derivative etc..In addition, by by electroluminescent organic material It is entrained in the material obtained in aforementioned polymer, for example, passing through doping rubrene, perylene, tetraphenylbutadiene, Buddhist nun sieve Red and cumarin substance obtained is also within the scope of such luminescent material.It should be understood that being merely given as luminescent material reality above Example, but its range of choice is not limited to range above, can from it is existing disclose or commercialized material ranges in select It selects.Electron transfer layer is used to improve the electron-transport efficiency of luminescence unit.Electron transfer layer, which preferably also has, stops hole Ability.Electron transfer layer is arranged on the top conduct of red light emitting layer, green light emitting layer and blue light-emitting layer in the present embodiment Common layer deposits.The example for constituting the material of electron transfer layer includes but is not limited to quinoline, perylene, phenanthroline, double benzene Ethylene, pyrimidine, triazole, oxazole, fullerene, oxadiazoles and Fluorenone or their derivative or metal complex.Electronics note Enter layer for improving the efficiency that electronics is injected from cathode, is arranged between electron transfer layer and cathode.Electron injecting layer group is become a useful person Material example includes the oxide (Li of lithium2O), the composite oxides (Cs of the fluoride (LiF) of lithium, caesium2CO3) and oxide/ The mixture of composite oxides.The material of electron injecting layer is not limited to previous materials.The composition material of electron injecting layer also wraps Include the alkali metal of alkaline-earth metal, such as lithium and the caesium of such as calcium and barium, metal (such as indium and magnesium) conduct with low work function Oxide/composite oxides/fluoride of the above metallic element.It should be understood that it is merely given as functional layer example above, but its Range of choice is not limited to the above citing, can from it is existing disclose or commercialized material ranges in select.
Top electrode 150 is made of conductive film, thickness can between 5nm~1000nm, preferably 10nm~ 150nm.Top electrode material include aluminium (Al), magnesium (Mg), calcium (Ca), sodium (Na), golden (Au), silver-colored (Ag), copper (Cu), chromium (Cr), Platinum (Pt), nickel (Ni) and their alloy.Top electrode 150 can also be by the simple substance or alloy of aforesaid metal elements or oxidation Film made of object is formed, such as indium tin oxide (ITO), indium-zinc oxide (InZnO), zinc oxide (ZnO) conductive film.
Thin-film encapsulation layer 160 is located at the upper of the top electrode of red pixel cell, green pixel cell and blue pixel cells Side, thin-film encapsulation layer 160 can be one layer perhaps multilayered structure using material can be organic film or inorganic film, or Person is the laminated construction of organic film and inorganic film.The thickness of thin-film encapsulation layer 160, can preferably between 200nm~20 μm It is adjusted according to the material of preparation thin-film encapsulation layer and technique and actual needs.The top surface of thin-film encapsulation layer 160 is (remote Surface from substrate 100) it can be flat (as shown in Figure 1), certainly, the top surface of thin-film encapsulation layer 160 is also possible to have Have certain slope, can by adjusting organic film thickness so as to adjust thin-film encapsulation layer top surface flatness.
Inventor is the study found that organic material is mainly the advantages of preparing thin-film encapsulation layer: 1, flatness is preferable, can be with It realizes planarization (being recessed present on filling substrate), is conducive to subsequently through such as chemical vapor deposition (CVD), physics gas Mutually the method for deposition (PVD) or atomic layer deposition (ALD) grows inorganic film；2, can be prepared by prior art thickness compared with Big organic material；3, the bend resistance better performances of organic material.However, the water and oxygen barrier property of organic material is not as good as inorganic Material.Common organic material is mainly polymethyl methacrylate (PMMA), PMMA in OLED display panel preparation process It is commonly called as acrylic or organic glass.Generally use organic material in flash distillation hair and InkJet printing processes preparation thin-film encapsulation layer Material.The major advantage of inorganic material is that water and oxygen barrier property is good compared with organic material, but its bend resistance for organic material Ability is poor, and is not easy to prepare the biggish inorganic film of thickness in actual process.The inorganic material preferably used in thin-film package Are as follows: silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2).Wherein, silicon nitride and aluminium oxide Refractive index (compactness) is better than silica and titanium oxide, so the water and oxygen barrier property of silicon nitride and aluminium oxide is better than silica And titanium oxide.But silica and the binding force of other film layers are preferable, and buckle resistance can be preferably.It is thin based on the above research Film encapsulation is preferably by the way of organic material and inorganic material combination, for example uses inorganic material/organic material/inorganic material The laminated construction of material, specifically, following several combinations: silicon nitride/organic material/silicon nitride can be used；Aluminium oxide+ Silicon nitride/organic material/silicon nitride+aluminium oxide；Silica+silicon nitride/organic material/silicon nitride+silica.Certainly, may be used In a manner of using several layers of inorganic material laminations, for example, aluminium oxide+titanium oxide/aluminium oxide+titanium oxide/aluminium oxide+titanium oxide/ Aluminium oxide+titanium oxide is made of the lamination of four aluminium oxide and titanium oxide, the water oxygen barriering effect of this combination compared with It is good, simultaneously as the thinner thickness of every layer of inorganic material, it still can be with into flexible display apparatus.
Inventor also found, although thin-film encapsulation layer 160 can completely cut off the steam and oxygen of surrounding, avoid functional layer 140 Be exposed in the environment of steam or oxygen, still, due between thin-film encapsulation layer 160 and functional layer 140 adhesion strength compared with It is weak, especially when OLED display panel needs often bending, between thin-film encapsulation layer 160 and top electrode 150, in functional layer 140 Separation or shifting phenomena are easy to happen between each organic film in portion, the anti-shear ability of OLED display panel is poor, causes to obstruct The ability of water oxygen declines.Based on this, in the present embodiment, (the emphasis ginseng of recess 170 through the pixel defining layer 120 is formed Examine Fig. 2 e and Fig. 2 f), the recess 170 is formed in the pixel defining layer 120, can run through the pixel defining layer 120, to expose the film layer (such as planarization layer) below pixel defining layer 120, are also possible to only through part thickness Pixel defining layer 120, may also be through also extending downwardly through the flat of segment thickness after the pixel defining layer 120 Smoothization layer can be the planarization layer that full depth is also extended downwardly through after the pixel defining layer 120 more to sudden and violent Expose the film layer (such as passivation layer) below planarization layer, the depth of the recess 170 can carry out accordingly according to actual needs Adjustment.In addition, the recess 170 can even continue downwards if corresponding to the dead space in product below the pixel defining layer Extend, as long as not influencing OLED display function.Also, the present invention is not intended to limit the width of the recess (along being parallel to substrate The size in direction), under the premise of the recess does not influence the original function of pixel defining layer, the width that can be recessed with appropriate adjustment Degree.
In conjunction with shown in Fig. 2 e and Fig. 2 f, in the present embodiment, it is described recess 170 be vertical hole, that is, be recessed 170 side wall The bottom wall 170c of 170a, 170b perpendicular to recess 170.The study found that functional layer can be reduced or avoided using vertical hole 140 and attachment of the top electrode 150 on side wall 170a, 170b, that is, make functional layer 140 and top electrode 150 mainly covering recess 170 bottom wall, without cover or reduce be covered on recess 170 side wall, in this way, it is subsequent be filled in recess 170 in encapsulation Film layer 160 can be directly in conjunction with the side wall of recess 170, and adhesion strength is preferable, and anti-shearing ability is more preferably under such structure.
It is understood that in actual production, the true form (and size) and design shape (and size) of various products Between allow that there are certain deviations.Generally, if what the true form (and size) of product allowed in design shape (and size) In deviation range, requirement can be reached.For example, the side wall of the recess 170 can be straight wall, the straight wall and bottom wall Angle be 90 degree or close to 90 degree；The side wall of the recess 170 is also possible to the arcwall with some radians, works as side wall The angle of its tangent line and bottom wall is 90 degree or close to 90 degree when for arcwall.
In addition, in the present embodiment, in OLED display panel in all areas, the pixel definition of corresponding each pixel unit It is each formed with recess in layer, these recess are annularly distributed and surround each pixel unit.It is to be understood that can also need not be The pixel defining layer of all areas of substrate 100 is respectively formed on recess, for example, for folding flexible display panels, Recess can be only formed in the pixel defining layer for folding position, because region bending probability is big, relative to the area seldom bent For domain, it is easier between the thin-film encapsulation layer and cathode at the folding position and between each film layer to occur to divide inside functional layer From it is advantageous to form recess in the pixel defining layer in this region.In another aspect, the size of the recess on each region and Shape can be identical, can also but size identical with shape it is not exactly the same or shape and size are all different.It is real On border, as long as foring recess, is filled in order to subsequent packaging film and form anchoring structure into recess, that is, OLED can be improved The anti-shear ability of display panel.
The production process of OLED display panel as above is discussed in detail below with reference to Fig. 1 and Fig. 2 a~2f.
Firstly, a substrate 100 is provided, well known driving circuit can be formed on the substrate 100 in conjunction with shown in Fig. 2 a, Wherein the drain electrode of the driving transistor of driving circuit is electrically connected by the hearth electrode 110 of via hole and OLED.The tool of driving circuit Body structure and forming method are content known to art technology, are not discussed in detail herein.May be used also on the substrate 100 It is formed with passivation layer, to the driving circuit on protective substrate.The passivation layer is preferably inorganic material, e.g. silicon nitride, Silica, aluminium oxide etc., it should be appreciated that be merely given as passivation layer example above, but its range of choice be not limited to Upper citing, can from it is existing disclose or commercialized material ranges in select.
Then, with continued reference to shown in Fig. 2 a, forming conductive film on the substrate 100, and by the conductive film pattern, The conductive film for retaining pixel region (luminous zone), forms multiple hearth electrodes 110, multiple hearth electrodes 110 respectively with different pixels list The drain electrode of the driving transistor of member is connected.It should be understood that the hearth electrode preferably uses transparent for bottom emitting device Conductive film such as ITO is made, and for top emitting device, the hearth electrode is then without transparent conductive film system At.Preferably, it is formed before hearth electrode 110, the method for first passing through such as spin coating prepares one layer of polymeric on hearth electrode 110 Film, to form planarization layer.
Followed by preparing a layers of polymer on hearth electrode 110 for example, by the method for spin coating with continued reference to shown in Fig. 2 a Object film, and pixel defining layer 120, the pixel definition are formed using corresponding patterned way according to the attribute of polymer Layer 120 is provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer When being photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is nonphotosensitive polymerization When object) thin polymer film is graphical, to form several pixel openings 130.The pixel defining layer 120 can be list Layer structure is also possible to the laminated construction being made of multiple separation layer stackups.For the pixel being made of multiple separation layer stackups The patterning process of definition layer can be optimized for defining after layer film all formed in all pixels, using a composition work Skill, such as exposure development technique and/or dry carving technology more save cost in this way.In the present embodiment, the pixel defining layer 120 use latticed (lattice-shaped) structure, and pixel openings 130 defined by pixel defining layer 120 are, for example, square aperture.
Next, forming recess 170 in pixel defining layer 120, it can specifically include following steps:
With reference to shown in Fig. 2 b, for example, by chemical vapor deposition (CVD) or the method for physical vapour deposition (PVD) (PVD) in institute It states and forms a hard mask layer (hard mask) 200 in hearth electrode 110 and pixel defining layer 120.The hard mask layer 200 is preferably It is inorganic material, this is because the organic material etching selection with higher of inorganic material and formation pixel defining layer 120 Than can be in order to which graphical pixel defining layer 120 so that form recess 170 wherein.Specifically, the hard mask layer 200 Material is, for example, silicon nitride, silica, aluminium oxide etc., it should be appreciated that is merely given as hard mask layer example above, but it is selected Select range and be not limited to the above citing, can from it is existing disclose or commercialized material ranges in select, as long as with The material of pixel defining layer etching selection ratio with higher can be used as the hard mask layer so as to form recess.
With reference to shown in Fig. 2 c, one layer of photoresist layer is prepared on hard mask layer 200 for example, by the method for spin coating, and pass through The method of exposure development is graphical by the photoresist layer, and patterned photoresist layer 210 covers the portion of 200 top surface of hard mask layer Subregion and side whole region have photoresist opening at the predetermined position for forming recess, and exposure is not by pixel definition The hard mask layer 200 of layer covering；
It is exposure mask with patterned photoresist layer 210 with reference to shown in Fig. 2 d, the hard mask layer 200 is etched, to be formed Patterned hard mask layer 200 ', the patterned hard mask layer 200 ' cover the partial region of 120 top surface of pixel defining layer And the whole region of side, there is hard mask layer opening at the predetermined position for forming recess.
With reference to shown in Fig. 2 e, exposure mask is made jointly with patterned photoresist layer 210 and patterned hard mask layer 200 ', is carved The pixel defining layer 120 is lost, to form recess 170.During etching pixel defining layer 120, patterned photoresist The step of layer 210 is synchronized to consume, and can save removal photoresist, certainly, can also remove separately through techniques such as plasma ashings Remaining photoresist.The etching technics is, for example, dry etch process, and specific etch process parameters can be according to be formed recessed The needs such as sunken depth are adaptively adjusted, and details are not described herein.In the present embodiment, the recess 170 runs through pixel defining layer 120 so that expose the film layer below pixel defining layer 120.When it is implemented, the recess 170 is also possible to only through-Penetration portion Divide the pixel defining layer 120 of thickness, does not expose the film layer of 120 lower section of pixel defining layer.Alternatively, the recess 170 can be The planarization layer that segment thickness is also extended downwardly through after the pixel defining layer 120 is also possible to through the pixel Entire planarization layer is extended downwardly through after definition layer 120 also to expose the film layer below planarization layer and (such as be passivated Layer).
In above-mentioned introduction, be initially formed pixel defining layer 120, after in pixel defining layer 120 formed recess 170, this be because For the pattern of pixel defining layer 120 is different from the pattern of recess 170 in the present embodiment, and pixel defining layer 120 is trapezoid knot Structure (has the gradient), and recess 170 is vertical through hole (recessed side walls are perpendicular to recess bottom wall), same in a patterning process When formed above two pattern difficulty it is larger, so selection by the way of multiple patterning process.But, should recognize It arrives, if pixel defining layer 120 is identical with the pattern of recess 170 or close to identical, for example is trapezoid structure or equal It can be saved in this way for vertical structure then a patterning processes, such as exposure development technique and/or dry carving technology can be used Save exposure mask cost, simplification of flowsheet.
It with reference to shown in Fig. 2 f, is formed after recess 170 in pixel defining layer 120, sequentially forms functional layer 140 and top Electrode 150.At pixel openings 130, the functional layer 140 covers the hearth electrode 110, and the top electrode 150 covers described Functional layer 140, the hearth electrode 110 of stacked above one another, functional layer 140 and top electrode 150 constitute pixel unit at pixel openings. At pixel defining layer 120, the functional layer 140 cover patterned hard mask layer 200 ' in pixel defining layer 120 and The bottom of recess 170, the cathode 150 cover the functional layer 140.The recess 170 as described in the present embodiment is vertical logical Hole, so, functional layer 140 and top electrode 150 are not easy on the side wall for being attached to recess 170, are conducive to be subsequently formed flat Smoothization layer is contacted with the side wall of pixel defining layer 120, to improve adhesion strength.
Wherein, functional layer 140 is for example including hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electricity Sub- implanted layer.Can be formed in the region separated by pixel defining layer 120 above-mentioned functional layer or in all areas together Form functional layer.Specifically, such as by the method for ink-jet by the material comprising forming hole injection layer, such as polyaniline, poly- thiophene The solution of pheno etc. or other dispersions are sprayed in the exposure of hearth electrode 110.Then, pass through heat treatment (drying process) Hole injection layer is formed, the atmosphere and temperature of drying process are determined according to the characteristic requirements of hole-injecting material used. Hole transmission layer is prepared on hole injection layer above-mentioned, and preparation method is similar with hole injection layer.Red light emitting layer and green Color luminescent layer is prepared by the method for coating in the upper surface of hole transmission layer.It is removed thereafter by the mode of heat treatment organic molten Agent obtains uniform film.Blue light-emitting layer then determines preparation method according to the material of use or device architecture.For polymerization Object luminescent material, generally uses solwution method, and the mode such as coated prepares film.For small molecule blue emitting material, Sedimentation preparation of film generally is adopted vapor deposition method, can be only located in blue emitting pixel unit, can also be used as altogether Same layer is located above the hole transmission layer of entire red light emitting layer, green light emitting layer and blue emitting pixel unit, this is depended on Needed for device architecture.After luminescent layer formation, previous materials can be formed above whole region by way of vapor deposition and be made Electron transfer layer, electron injecting layer and top electrode.Wherein, luminescent layer is set in pixel openings 130 only to open in pixel Composition pixel unit at mouthful, and other film layers (hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer) It can choose and be patterned, also can choose without patterning process, but prepared by entire film layer, to save Exposure mask cost, simplification of flowsheet.For simplicity, functional layer is schematically represented only with one layer of continuous film layer in figure, but It should be understood that the functional layer can be laminated construction, and luminescent layer at least within is patterned.
After forming top electrode 150, refering to what is shown in Fig. 1, being formed by the mode that mode or inkjet printing is such as deposited Thin-film encapsulation layer 160.Due to being formed with recess 170 in pixel defining layer 120, thin-film encapsulation layer 160 is filled described recessed 170 are fallen into, and covers the top electrode 150, so, the thin-film encapsulation layer 160 being filled in recess 170 is equivalent to composition Several anchoring structures, effectively enhance the anti-shearing force of OLED display panel, can avoid between thin-film encapsulation layer and top electrode And it is separated between each film layer inside functional layer.
Specifically, the thin-film encapsulation layer 160 includes four-layer structure, respectively the first film encapsulated layer 161, second is thin Film encapsulated layer 162, third thin-film encapsulation layer 163 and the 4th thin-film encapsulation layer 164.Specifically, the first film encapsulated layer 161 It fills the recess 170 and covers the top electrode 150, the second thin-film encapsulation layer 162, third thin-film encapsulation layer 163 and the Four thin-film encapsulation layers 164 are sequentially laminated on the first film encapsulated layer 161.Wherein, the second thin-film encapsulation layer 162 and Four thin-film encapsulation layers 164 can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in Any one or a variety of combinations.The thickness of each layer can be adjusted according to needs in thin-film encapsulation layer 160, this hair It is bright that this is not limited.
To sum up, in the present embodiment, recess, the picture of the recess at least through part thickness are formed in pixel defining layer Plain definition layer, the first film encapsulated layer filling recess in thin-film encapsulation layer forms anchoring structure, using the anchoring structure The adhesive capacity between thin-film encapsulation layer and top electrode is effectively enhanced, the anti-shearing force of OLED display panel can be improved, is reduced Or avoid between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift phenomenon.Into One step, the recess is vertical hole, is conducive to be connect by the first film encapsulated layer prepared by organic material with pixel defining layer It touches, the adhesion strength between organic material is preferable.
Embodiment two
Fig. 3 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention two.As shown in figure 3, the OLED display surface Plate includes that substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel are fixed Adopted layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In conjunction with shown in Fig. 4 a and Fig. 4 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED Display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and Fei Fa Light area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, however It is only that 130 corresponding part of pixel openings shines, constitutes luminous zone.Preferably, pixel defining layer 120 close to substrate 100 one It holds the cross-sectional width of (bottom end) to be greater than the cross-sectional width of its one end (top) far from substrate 100, can guarantee subsequent shape in this way At top electrode 150 be continuously covered on the side wall of pixel defining layer 120, that is, guarantee cathode continuity.Specifically, this In embodiment, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction In trapezoid, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that being embodied In, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 It can be the acclive shape of tool other than trapezoid, the angle between the side wall and bottom wall of the pixel defining layer 120 can be Between 30~80 degree.
In the present embodiment, the cross-sectional width of described 170 one end (bottom end) close to substrate 100 that is recessed is greater than it far from base The cross-sectional width of one end (top) of plate 100.Specifically, described be recessed 170 perpendicular to substrate surface and be parallel to pixel definition The section (longitudinal section) of layer width direction is in trapezoid, it is preferred that the longitudinal section of the recess 170 is isosceles trapezoid.It can manage Solution, in specific implementation, the longitudinal section of the recess 170 are also possible to other shapes, for example, the vertical of the recess 170 cuts Face is also possible to the acclive shape of the tool other than trapezoid, and the angle between the side wall and bottom wall of the recess 170 can be 30 Between~80 degree.The study found that forming anchoring structure using up-narrow and down-wide recess, anti-shearing ability is more preferably.In addition, real In the production of border, allow that there are certain deviations between the true form (and size) and design shape (and size) of various products.One As, as long as the true form (and size) of product can reach in the deviation range that design shape (and size) allows Requirement.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall less than 90 degree, such as 30~ Between 80 degree；The side wall of the recess is also possible to the arcwall with some radians, when side wall be arcwall when its tangent line with The angle of bottom wall is less than 90 degree, such as between 30~80 degree.
In the present embodiment, the recess 170 is through the pixel defining layer 120 to expose under pixel defining layer 120 The film layer (such as planarization layer) of side, as shown in fig. 4 a.In specific embodiment, the recess 170 is also possible to only through part The pixel defining layer 120 of thickness also extends downwardly through segment thickness after may also be through the pixel defining layer 120 Planarization layer, more can be also extended downwardly through after the pixel defining layer 120 planarization layer of full depth from And expose the film layer below planarization layer (such as passivation layer), it is described recess 170 depth can according to actual needs into The corresponding adjustment of row.In addition, the recess 170 even can be after if corresponding to the dead space in product below the pixel defining layer It is continuous to extend downwardly, as long as not influencing OLED display function.Also, the present invention is not intended to limit the width of the recess (along parallel In the size of orientation substrate), it, can be recessed with appropriate adjustment under the premise of the recess does not influence the original function of pixel defining layer Sunken width.
In the present embodiment, recess, and pixel defining layer are each formed in the pixel defining layer of corresponding each pixel unit In be respectively formed with a recess.It is to be understood that actually can also need not be in the pixel defining layer of all areas of substrate 100 It is respectively formed on recess, for example, for folding flexible display panels, it can be only in the pixel defining layer for folding position Recess is formed, because region bending probability is big, for the region seldom bent, the thin-film package at the folding position Layer is more easily separated between cathode and inside functional layer between each film layer, and it is advantageous to the pixel in this region is fixed Recess is formed in adopted layer.On the other hand, the size and shape of the recess of each region can be identical, can also be incomplete It is identical.As long as being filled in order to subsequent packaging film in fact, foring recess and forming anchoring structure into recess, Ji Keti The anti-shear ability of high OLED display panel.
The production process of OLED display panel as above is introduced below with reference to Fig. 4 a to Fig. 4 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Fig. 4 a, and by the conduction It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110 Electrode is connected.
Then, with continued reference to shown in Fig. 4 a, one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer 120 are provided with the pixel openings 130 corresponding to luminous zone, also, recess 170 is formed in the pixel defining layer 120.Institute The cross-sectional width that pixel defining layer 120 is greater than its one end far from substrate 100 close to the cross-sectional width of one end of substrate 100 is stated, Correspondingly, pixel openings 130 are less than the section of its one end far from substrate 100 close to the cross-sectional width of one end of substrate 140 Width, that is, pixel openings 130 are structure wide at the top and narrow at the bottom.The cross-sectional width of described 170 one end close to substrate 100 that is recessed is big Cross-sectional width in its one end far from substrate 100, that is, recess 170 is up-narrow and down-wide structure.
Same negativity photoresist can be used as exposure mask, formed by double exposure developing process pixel openings 130 and Recess 170.When exposing for the first time, relatively small light exposure may be selected, so that control forms up-narrow and down-wide pixel defining layer 120 and pixel openings 130 wide at the top and narrow at the bottom；When second of exposure, relatively large light exposure may be selected, to control shape At up-narrow and down-wide recess 170.It should be understood that in the specific implementation, the also formation of adjustable pixel openings 130 and recess 170 Sequentially, for example, relatively large light exposure may be selected when exposing for the first time, so that control forms up-narrow and down-wide recess 170；When second of exposure, relatively small light exposure may be selected, so that control forms up-narrow and down-wide pixel defining layer 120 And pixel openings 130 wide at the top and narrow at the bottom.In the present embodiment, selected relatively large light exposure example when exposing for the first time Such as larger than 300mJ/cm2, second of selected relatively small light exposure when exposing is, for example, less than 30mJ/cm2.It should be understood that Used light exposure when used " relatively large light exposure " refers to relative to second of exposure when exposing for the first time For it is larger, similarly, second when exposing used " relatively small light exposure " refer to and expose when institute relative to first time It is smaller for the light exposure of use, not to the restriction of specific value.When practical application, those skilled in the art can according to The factors such as upper disclosure and combination selected pixel definition layer material and exposure bench, pass through the reality of limited times The exposure numerical quantity to select double exposure technique specifically to use is tested, to control the shape of pixel openings 130 and recess 170 Looks are not specific herein to limit.
It is formed after recess, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electricity Pole 150, and, thin-film encapsulation layer 160 is formed by way of such as CVD, the thin-film encapsulation layer 160 is such as using inorganic Material/organic material/inorganic material laminated construction, specifically, following several combinations: silicon nitride/organic can be used Material/silicon nitride；Aluminium oxide+silicon nitride/organic material/silicon nitride+aluminium oxide；Silica+silicon nitride/organic material/nitridation Silicon+silica.
To sum up, in the present embodiment, recess, the picture of the recess at least through part thickness are formed in pixel defining layer Plain definition layer, the first film encapsulated layer filling recess in thin-film encapsulation layer forms anchoring structure, using the anchoring structure The adhesive capacity between thin-film encapsulation layer and top electrode is effectively enhanced, the anti-shearing force of OLED display panel can be improved, is reduced Or avoid between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or positional shift phenomenon.Into One step, the recess is up-narrow and down-wide hole, and the anti-shearing force of the anchoring structure formed in this way is preferable.
Embodiment three
Fig. 5 is the diagrammatic cross-section of OLED display panel in the present embodiment.As shown in figure 5, the OLED display panel includes Substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel defining layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In conjunction with shown in Fig. 6 a and Fig. 6 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED Display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and Fei Fa Light area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, however It is only that 130 corresponding part of pixel openings shines, constitutes luminous zone.Preferably, pixel defining layer 120 close to substrate 100 one It holds the cross-sectional width of (bottom end) to be greater than the cross-sectional width of its one end (top) far from substrate 100, can guarantee subsequent shape in this way At top electrode 150 be continuously covered on the side wall of pixel defining layer 120, that is, guarantee cathode continuity.Specifically, this In embodiment, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction In trapezoid, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that being embodied In, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 It can be the acclive shape of tool other than trapezoid, the angle between the side wall and bottom wall of the pixel defining layer 120 can be Between 30~80 degree.
In the present embodiment, the thin-film encapsulation layer 160 includes three-decker, respectively the first film encapsulated layer 161, the Two thin-film encapsulation layers 162 and third thin-film encapsulation layer 163.Specifically, the first film encapsulated layer 161 covers the top electrode 150, the second thin-film encapsulation layer 162 and third thin-film encapsulation layer 163 are sequentially laminated on the first film encapsulated layer 161. Wherein, the first film encapsulated layer 161 and third thin-film encapsulation layer 163 are inorganic film, can use silica (SiO2), nitrogen SiClx (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations, e.g. pass through The mode of CVD, PVD or ALD are formed.Second thin-film encapsulation layer 162 is organic film, can be made of PMMA, such as pass through spray Black printing type is formed.The thickness of each layer can be according to needing to be adjusted in thin-film encapsulation layer 160, and the present invention refuses this It limits.
In conjunction with shown in Fig. 6 a and Fig. 6 b, in the present embodiment, recess 170 is located at the top of pixel defining layer 120, and through the One thinner package film layer 161, top electrode 150 and functional layer 140, to expose the top part subregion of pixel defining layer 120 Domain, in this way, by the fillable recess 170 of the second thinner package film layer 162 of organic material preparation thus and pixel defining layer 120 contacts, improve the adhesive force of thin-film encapsulation layer.In specific embodiment, the recess 170 runs through the first thinner package film layer 161, after top electrode 150 and functional layer 140, the pixel defining layer 120 of segment thickness can also be extended downwardly through, also It can be that extend downwardly through the pixel defining layer 120 of full depth (all to expose 120 lower section film layer of pixel defining layer Such as planarization layer), and can be and also extend downwardly through the flat of segment thickness after the pixel defining layer 120 of full depth Smoothization layer more can be the planarization layer that full depth is also extended downwardly through after the pixel defining layer 120 of full depth To expose the film layer (such as passivation layer) below planarization layer, in addition, if corresponding to product below the pixel defining layer In dead space, which even can continue to extend downwardly, as long as not influencing OLED display function, institute in a word The depth for stating recess 170 can adjust accordingly according to actual needs.Also, the present invention is not intended to limit the width of the recess (along the size of orientation substrate is parallel to) can be appropriate under the premise of the recess does not influence the original function of pixel defining layer Adjust the width of recess.
In the present embodiment, cross-sectional width of the recess 170 close to one end (bottom end) of substrate 100 is less than it far from substrate 100 One end (top) cross-sectional width, specifically, the recess 170 perpendicular to substrate surface and is parallel to pixel definition slice width The section (longitudinal section) for spending direction is in inverted trapezoidal, it is preferred that the longitudinal section of the recess 170 is isosceles trapezoid.It is understood that It is that in specific implementation, the longitudinal section of the recess 170 is also possible to other shapes, for example, the longitudinal section of the recess 170 The cross-sectional width that can be close to one end (bottom end) of substrate 100 is wide greater than the section of its one end (top) far from substrate 100 Degree, the recess 170 is perpendicular to substrate surface and is parallel to the section of pixel defining layer width direction in trapezoid.It can manage Solution in actual production, allows that there are one between the true form (and size) and design shape (and size) of various products Determine deviation.Generally, as long as the true form (and size) of product is in the deviation range that design shape (and size) allows, just It can achieve requirement.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall less than 90 degree, than Such as between 30~80 degree；The side wall of the recess is also possible to the arcwall with some radians, when side wall is arcwall The angle of its tangent line and bottom wall is less than 90 degree, such as between 30~80 degree.
In the present embodiment, recess is each formed in the pixel defining layer of corresponding each pixel unit, and each pixel is fixed It is each on adopted layer to form multiple recess.It is to be understood that being also possible to respectively form a recess in each pixel defining layer.It is practical On can also need not be respectively formed on recess in the pixel defining layer of all areas of substrate 100, for example, for folding flexibility For display panel, recess can be only formed in the pixel defining layer for folding position, because region bending probability is big, relatively For the region seldom bent, between the thin-film encapsulation layer and cathode at the folding position and inside functional layer each film layer it Between be easier separate, it is advantageous in the pixel defining layer in this region formed be recessed.On the other hand, each region The size and shape of recess can be identical, can also be not exactly the same.In fact, as long as recess is formd, in order to rear Continuous packaging film fills and forms anchoring structure into recess, that is, the anti-shear ability of OLED display panel can be improved.
The production process of OLED display panel as above is introduced below with reference to Fig. 6 a to Fig. 6 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Fig. 6 a, and by the conduction It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110 Electrode is connected.
Then, with continued reference to shown in Fig. 6 a, one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer 120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is When photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is non-photosensitive polymers When) thin polymer film is graphical, to form several pixel openings 130.
Followed by, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electrode 150, And the first film encapsulated layer 161 is formed by way of such as CVD.The first film encapsulated layer 161 is inorganic film, can be with Using silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or it is a variety of Combination.
Next, etching the first film encapsulated layer 161, top electrode 150 and functional layer 140, it is fixed to form exposure pixel The recess 170 of adopted layer 120.
Then, the second thin-film encapsulation layer 162 and third thin-film encapsulation layer 163 are formed.Third thin-film encapsulation layer 162 is same For inorganic film, silica (SiO can be used2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in appoint The combination for one or more of anticipating.Second thinner package film layer 162 is organic film, can fill recess 170 and and pixel definition Layer 120 contacts.Since the second thinner package film layer 162 and pixel defining layer 120 are organic material, adhesive force between the two compared with It is good, the adhesive force of thin dielectric film can be improved.
To sum up, in the present embodiment, above pixel defining layer formed recess, and the recess through the first film encapsulated layer, Top electrode and functional layer form anchoring structure by the second thin-film encapsulation layer filling recess of organic material preparation, using the anchoring Structure effectively enhances the adhesive capacity between thin-film encapsulation layer and top electrode, and the anti-shearing force of OLED display panel can be improved, Be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside occur separating between each film layer or positional shift is existing As.
Example IV
Fig. 7 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention four.As shown in fig. 7, the OLED display surface Plate includes that substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel are fixed Adopted layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In conjunction with shown in Fig. 8 a and Fig. 8 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone.OLED Display panel includes luminous zone and non-light-emitting area, and the pixel openings 130 of pixel defining layer 120 are used to define luminous zone and Fei Fa Light area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Functional layer 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, however It is only that 130 corresponding part of pixel openings shines, constitutes luminous zone.Preferably, pixel defining layer 120 close to substrate 100 one It holds the cross-sectional width of (bottom end) to be greater than the cross-sectional width of its one end (top) far from substrate 100, can guarantee subsequent shape in this way At top electrode 150 be continuously covered on the side wall of pixel defining layer 120, that is, guarantee cathode continuity.Specifically, this In embodiment, pixel defining layer 120 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction In trapezoid, it is preferred that the longitudinal section of the pixel defining layer 120 is isosceles trapezoid.It is understood that being embodied In, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the longitudinal section of the pixel defining layer 120 It can be the acclive shape of tool other than trapezoid, the angle between the side wall and bottom wall of the pixel defining layer 120 can be Between 30~80 degree.
The study found that the bending performance in order to guarantee flexible screen body, it is desirable to the thickness of thin-film encapsulation layer gets over Bao Yuehao, but The thicker effects to guarantee barrier water oxygen of the inorganic film thickness in thin-film encapsulation layer are wished again in pixel region (luminous zone).Together When, it is also desirable to the inorganic film in thin-film encapsulation layer can improve the adhesive capacity of thin-film encapsulation layer with pixel defining layer contact. It is analyzed based on these, in the present embodiment, the thin-film encapsulation layer 160 includes the first film encapsulated layer 161 and the second thin-film package Layer 162, both for inorganic film, can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.Specifically, it is initially formed the first film encapsulated layer 161, it is then fixed in pixel The recess 170 for running through the first thinner package film layer 161, top electrode 150 and functional layer 140 is formed above adopted layer 120, then again The second thin-film encapsulation layer 162 is formed, which covers the first thinner package film layer 161 and fill recess 170.So, the first film encapsulated layer 161 and the second thin-film encapsulation layer 162 are formed at pixel openings, and in picture The first film encapsulated layer 161 of plain 120 top of definition layer is formed with recess, is equivalent to the part area of 120 top of pixel defining layer The first film encapsulated layer 161 in domain is dug up, and only the second thin-film encapsulation layer 162, is thinned 120 top of pixel defining layer The inorganic film thickness of partial region.In addition, the second thin-film encapsulation layer 162 is contacted by recess 170 with pixel defining layer 120, Increase the contact area of the second thin-film encapsulation layer 162 with pixel defining layer 120, although inorganic material and pixel defining layer it Between adhesion strength not as good as adhesion strength between organic material and pixel defining layer, but the second thin-film encapsulation layer 162 and pixel are fixed Adhesion strength between adopted layer 120 still can be improved thin better than the adhesion strength between the second thin-film encapsulation layer 162 and top electrode 150 The adhesion strength of film encapsulated layer, and anchoring structure itself is also helpful to the anti-shearing force for improving device.
In the present embodiment, the first film encapsulated layer 161 and the second thin-film encapsulation layer 162 are inorganic film, actually may be used It is formed twice with being not understood as the inorganic film of traditional primary depositing being divided into, i.e., the first film encapsulated layer 161 and second is thin The overall thickness of film encapsulated layer 162 is identical as the inorganic film thickness that traditional primary depositing is formed, for example, 0.5 μm~1.5 μ m.Specifically, the thickness of the first film encapsulated layer 161 is greater than or equal to the thickness of the second thin-film encapsulation layer 162, for example, first Why the thickness proportion of thin-film encapsulation layer 161 and the second thin-film encapsulation layer 162 can set in this way between 1:1~10:1 Setting is water and oxygen barrier property and bending performance in order to balance, and the thickness of one side the first film encapsulated layer 161 should not be excessively thin to keep away Exempt to damage functional layer when etching forms recess, it is thin that the thickness of the second thin-film encapsulation layer 162 is on the other hand set smaller than first The thickness of the thickness of film encapsulated layer 161, the second thin-film encapsulation layer 162 retained in recess 170 subsequent in this way is relatively thin, The effect of bending can be played well.Practice discovery, the first film encapsulated layer 161 and the second thin-film encapsulation layer 162 with a thickness of 1:1 (when i.e. the two thickness is equal), can preferably take into account water and oxygen barrier property and bending performance.
In the present embodiment, cross-sectional width of the recess 170 close to one end (bottom end) of substrate 100 is less than it far from substrate 100 One end (top) cross-sectional width, specifically, the recess 170 perpendicular to substrate surface and is parallel to pixel definition slice width The section (longitudinal section) for spending direction is in inverted trapezoidal, it is preferred that the longitudinal section of the recess 170 is isosceles trapezoid.It is understood that It is that in specific implementation, the longitudinal section of the recess 170 is also possible to other shapes, for example, the longitudinal section of the recess 170 The cross-sectional width that can be close to one end (bottom end) of substrate 100 is wide greater than the section of its one end (top) far from substrate 100 Degree, the recess 170 is perpendicular to substrate surface and is parallel to the section of pixel defining layer width direction in trapezoid.It can manage Solution in actual production, allows that there are one between the true form (and size) and design shape (and size) of various products Determine deviation.Generally, as long as the true form (and size) of product is in the deviation range that design shape (and size) allows, just It can achieve requirement.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall less than 90 degree, than Such as between 30~80 degree；The side wall of the recess is also possible to the arcwall with some radians, when side wall is arcwall The angle of its tangent line and bottom wall is less than 90 degree, such as between 30~80 degree.
In the present embodiment, 170 cross section (the being parallel to substrate surface) shape of being recessed can be round, ellipse or more Side shape, polygonal triangle in this way, rectangle, diamond shape etc., the present invention not limit this.
In the present embodiment, recess is each formed in the pixel defining layer of corresponding each pixel unit, and each pixel is fixed It is each on adopted layer to form multiple recess.When it is implemented, being also possible to respectively form a recess in each pixel defining layer.Moreover, It can also need not be respectively formed on recess in the pixel defining layer of all areas of substrate 100, for example, for folding flexible aobvious For showing panel, recess can be only formed in the pixel defining layer for folding position, because region bending probability is big, relative to For the region seldom bent, between each film layer between the thin-film encapsulation layer and cathode at the folding position and functional layer inside Separation or displacement more easily occurs, it is advantageous to recess is formed in the pixel defining layer in this region.On the other hand, Ge Gequ The size and shape of the recess in domain can be identical, can also be not exactly the same.If in fact, form recess, so as to It is filled in subsequent packaging film and forms anchoring structure into recess, that is, the anti-shear ability of OLED can be improved.
The production process of OLED display panel as above is briefly introduced below with reference to Fig. 8 a to Fig. 8 b.
Firstly, provide a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Fig. 8 a, and by the conduction It is Film patterning, form multiple hearth electrodes 110, the leakage with the driving transistor of different pixels unit respectively of multiple hearth electrodes 110 Electrode is connected.
Then, with continued reference to shown in Fig. 8 a, one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer 120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is When photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is non-photosensitive polymers When) thin polymer film is graphical, to form several pixel openings 130.
Followed by, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electrode 150, And the first film encapsulated layer 161 is formed by way of such as CVD.The first film encapsulated layer 161 is inorganic film, can be with Using silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or it is a variety of Combination.
Next, as shown in Figure 8 b, etching the first film encapsulated layer 161, top electrode 150 and functional layer 140, shape At the recess 170 of exposure pixel defining layer 120.Specifically, for example, by being InkJet printing processes in the first film encapsulated layer 161 tops form patterned protective layer, and the patterned protective layer protects the region for not necessarily forming recess 170, The first film encapsulated layer 161,150 and of top electrode of 120 top of pixel defining layer are etched for example, by the mode of dry etching again Functional layer 140, to form recess 170.Then, the protective layer of inkjet printing formation can be removed, and forms the second film envelope Layer 162 is filled, as shown in Figure 7.Certainly, the protective layer can not also remove, but directly form the second film envelope on the protection layer Layer 162 is filled, to realize the purpose that do not lose water oxygen obstructing capacity and improve bending performance.
Above-mentioned is the forming process that recess 170 is described so that inkjet printing is patterned as an example, in specific implementation, Photoresist can be formed above the first film encapsulated layer 161 by spin coating mode, and carries out exposure and imaging technique and forms figure The photoresist layer of change, the patterned photoresist layer protect the region for not necessarily forming recess 170, then for example, by dry method The mode of etching etches the first film encapsulated layer 161, top electrode 150 and the functional layer 140 of 120 top of pixel defining layer, with shape At recess 170.Then, patterned photoresist layer can be removed, and forms the second thin-film encapsulation layer 162.
Second thin-film encapsulation layer 162 is similarly inorganic film, can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.
In the present embodiment, the thin-film encapsulation layer 160 can also include third thin-film encapsulation layer 163 and the 4th film Encapsulated layer 164, third thin-film encapsulation layer 163 are organic film, and the 4th thin-film encapsulation layer 164 is then inorganic film.
To sum up, in the present embodiment, above pixel defining layer formed recess, and the recess through functional layer, top electrode and The first film encapsulated layer forms anchoring structure by the second thin-film encapsulation layer filling recess of inorganic material preparation, using the anchoring Structure effectively enhances the adhesive capacity between thin-film encapsulation layer and top electrode, and the anti-shearing force of OLED display panel can be improved, Be reduced or avoided between thin-film encapsulation layer and cathode and functional layer inside occur separating between each film layer or positional shift is existing As.In addition, the first film encapsulated layer and the second thin-film encapsulation layer are formed at pixel openings, and above pixel defining layer The first film encapsulated layer be formed with recess, be equivalent to the first film encapsulated layer quilt of the partial region above pixel defining layer Dig up, be thinned the subregional inorganic film thickness of pixel defining layer upper portion, is conducive to improve bending performance.
Embodiment five
Fig. 9 is a kind of diagrammatic cross-section of OLED display panel in the embodiment of the present invention five.As shown in Fig. 9, the OLED is aobvious Show panel include substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), as Plain definition layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.
In the present embodiment, it is separate that cross-sectional width of the pixel defining layer 120 close to one end (bottom end) of substrate 100 is less than its The cross-sectional width of one end (top) of substrate 100, that is, the pixel defining layer 120 is structure wide at the top and narrow at the bottom.Specifically, described Recess 170 is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction in inverted trapezoidal.It can manage Solution in actual production, allows that there are one between the true form (and size) and design shape (and size) of various products Determine deviation.Generally, as long as the true form (and size) of product is in the deviation range that design shape (and size) allows, just It can achieve requirement.For example, the side wall of the recess can be straight wall, the angle of the straight wall and bottom wall less than 90 degree, than Such as between 30~80 degree；The side wall of the recess is also possible to the arcwall with some radians, when side wall is arcwall The angle of its tangent line and bottom wall is less than 90 degree, such as between 30~80 degree.
Since the pixel defining layer 120 is structure wide at the top and narrow at the bottom, in this way, being subsequently formed functional layer 140 and top electrode When 150, functional layer 140 and top electrode 150 are not easy at the base angle for being filled into the pixel defining layer 120, at pixel openings 130 Functional layer 140 and top electrode 150 at functional layer 140 and top electrode 150 and pixel defining layer 120 are to disconnect, pixel definition There is recess 170 (emphasis refers to Figure 10 b), the recess 170 is fixed positioned at pixel between functional layer in layer 120 and pixel openings Two sides in adopted 120 width direction of layer, thin-film encapsulation layer 160 can be filled and form anchoring structure in the recess 170, improve The anti-shearing force of OLED.
Since the top electrode 150 of 120 top of top electrode 150 and pixel defining layer at pixel openings 130 is to disconnect, Correspondingly, segmentation structure can be set by the pixel defining layer 120 around pixel openings 130, as shown in figure 11, pixel is opened Four sections of pixel defining layers 120 (one section of pixel defining layer 120 is arranged in every side), adjacent two sections of pixels can be set in 130 surroundings of mouth Top electrode 150 can be deposited in position between definition layer, hereby it is ensured that top electrode 150 realizes electrical connection.Alternatively, pixel Multistage pixel defining layer 120 is arranged in every side of opening 130.Certainly, the shape of pixel defining layer 120 and quantity not office It is limited to the example above, for example, one section of pixel defining layer 120 can also be set in 130 surrounding of pixel openings with reference to shown in Figure 12, The notch that there is the pixel defining layer 120 an achievable top electrode 150 to be electrically connected.
The thin-film encapsulation layer 160 is arranged alternately by organic film and inorganic film to be constituted.Specifically, in the present embodiment, As shown in figure 9, the thin-film encapsulation layer 160 includes six layer structure, the first film encapsulated layer 161 respectively stacked gradually, the Two thin-film encapsulation layers 162, third thin-film encapsulation layer 163, the 4th thin-film encapsulation layer 164, the 5th thin-film encapsulation layer the 165, the 6th are thin Film encapsulated layer 166.Wherein, the first film encapsulated layer 161, third thin-film encapsulation layer 163, the 5th thin-film encapsulation layer 165 are organic Film layer, the second thin-film encapsulation layer 162, the 4th thin-film encapsulation layer 164, the 6th thin-film encapsulation layer 166 are inorganic film, that is, the One to the 6th encapsulation film layer is using organic film and the alternatively distributed mode of inorganic film.Wherein, the second thin-film encapsulation layer 162, the 4th thin-film encapsulation layer 164, the 6th thin-film encapsulation layer 166 can use silica (SiO2), silicon nitride (SiN), oxidation Aluminium (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.It should be understood that the thin-film encapsulation layer 160 is simultaneously It is not limited to six layer structure, can also be and be made of more layers, for example uses eight layers of structure (+four layers of nothing of such as four layers of organic film Machine film layer), it is also possible to be made of fewer layers, for example use four-layer structure (such as two layers of+two layers inorganic film of organic film), The quantity of thin-film encapsulation layer and the thickness of each layer can be adjusted according to actual needs, and the present invention not limits this.
Preferably, as shown in figure 9, inorganic film (the present embodiment in the thin-film encapsulation layer 160 in addition to top In refer to the second thin-film encapsulation layer 162 and the 4th thin-film encapsulation layer 164) be all made of segmentation structure, that is, in addition to top Inorganic film and be non-whole face film layer, but have some openings, thus make two layers adjacent of organic film by opening phase It connects to form closing structure, further increases anti-shearing force.
Although above-mentioned is to be all made of segmented knot with all inorganic films in thin-film encapsulation layer 160 in addition to top The explanation that structure carries out, it should be appreciated that, can also in the inorganic film of other positions in all inorganic films in addition to top To be that only part is using segmentation structure, then the segmentation structure upper layer and lower layer organic film can be connected with each other, for example, With reference to shown in 13, the thin-film encapsulation layer 160 includes eight layers of structure, the first to the 8th thin-film package respectively stacked gradually Layer 161~168, wherein the first film encapsulated layer 161, third thin-film encapsulation layer 163, the 5th thin-film encapsulation layer the 165, the 7th Thin-film encapsulation layer 167 is organic film, the second thin-film encapsulation layer 162, the 4th thin-film encapsulation layer 164, the 6th thin-film encapsulation layer 166, the 8th thin-film encapsulation layer 168 is inorganic film, the second thin-film encapsulation layer 162 and the 4th thin-film encapsulation layer 164 using segmentation Formula structure, the 6th thin-film encapsulation layer 166 and the 8th thin-film encapsulation layer 168 then use whole face structure, can also improve to a certain degree Anti-shearing force, also, be provided with multilayer inorganic film above pixel defining layer 120 (this refers to the 6th thin-film encapsulation layers 166 With the 8th thin-film encapsulation layer 168) it is also beneficial to guarantee to obstruct the effect of water oxygen at the position.
The production process of OLED display panel as above is introduced below with reference to Figure 10 a to Figure 10 b.
Firstly, providing a substrate 100, and form conductive film on the substrate 100, and this is led in conjunction with shown in Figure 10 a Conductive film is graphical, forms multiple hearth electrodes 110, multiple hearth electrodes 110 respectively with the driving transistor of different pixels unit Drain electrode is connected.
Then, it continues to refer to figure 1 shown in 0a, prepares one layer of polymeric on hearth electrode 110 for example, by the method for spin coating Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer 120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is When photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is non-photosensitive polymers When) thin polymer film is graphical, to form several pixel openings 130.By in this present embodiment, the pixel definition Layer 120 is structure wide at the top and narrow at the bottom, so it is preferred that can be formed as exposure mask using exposure development technique using negative photoresist Narrow pixel defining layer 120 under wide.
Followed by the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 and top electrode 150. Due to the structure wide at the top and narrow at the bottom that the pixel defining layer 120 uses, so it has close to the corner of hearth electrode 110 The thickness of recess, functional layer 140 and top electrode 150 is relatively thin, is not easy to fill the full recess, so, form functional layer 140 There are 170 (fillable seams of recess after top electrode 150, between the functional layer in pixel defining layer 120 and pixel openings Gap), as shown in fig. lob.Preferably, it for top illuminating device, is formed after top electrode 150, also by being such as deposited Mode or the mode of inkjet printing form light coupling layer (CPL) on top electrode 150, to improve light extraction efficiency.In addition, passing through When vapor deposition mode forms functional layer 140, top electrode 150 and CPL, FMM (be open lesser evaporation mask plate) shape can be used At, can also be formed using OPEN MASK (be open biggish evaporation mask plate) because pixel defining layer 120 be it is upper it is wide under Narrow structure (such as inverted trapezoidal structure), inherently can be real using OPEN MASK vapor deposition functional layer 140, top electrode 150 and CPL The film layer of existing luminous zone and the film layer at pixel defining layer disconnect, certainly, using OPEN MASK vapor deposition functional layer 140, top electricity Pole 150 and when CPL, pixel defining layer is also formed with above-mentioned film layer on 120 upper surface.
After forming top electrode 150, with reference to shown in Figure 10 b, by the mode shape that mode or inkjet printing is such as deposited At thin-film encapsulation layer 160.Due to having recess 170 between pixel defining layer 120 and functional layer 140, thin-film encapsulation layer The 160 fillings recess 170, and the top electrode 150 is covered, so, the thin-film encapsulation layer being filled in recess 170 160 are equivalent to and constitute several anchoring structures, effectively enhance the anti-shearing force of OLED display panel, can avoid thin-film package Layer occurs separating or shift between top electrode and inside functional layer between each film layer.
Specifically, thin-film encapsulation layer 160 includes the first film encapsulated layer 161, second stacked gradually in the present embodiment Thin-film encapsulation layer 162, third thin-film encapsulation layer 163, the 4th thin-film encapsulation layer 164, the 5th thin-film encapsulation layer 165, the 6th film Encapsulated layer 166.It is patterned when forming the second thin-film encapsulation layer 162 and four thin-film encapsulation layers 164 and becomes segmented Structure, being conducive to the first film encapsulated layer 161, third thin-film encapsulation layer 163, this three layers of the 5th thin-film encapsulation layer 165 in this way has Machine film layer is interconnected to form closing structure, can further enhance the anti-shearing force of OLED display panel.Thin-film package The inorganic film (referring to the 6th thin-film encapsulation layer 166 in the present embodiment) of top then uses whole face structure in layer 160, with reality Now preferable water oxygen barriering effect.
Figure 14 is another diagrammatic cross-section of OLED display panel in the embodiment of the present invention.As shown in figure 14, the picture It may also be formed with hole 120 ' in plain definition layer 120, the cross-sectional width of the one end (bottom end) of the hole 120 ' close to substrate 100 is big Cross-sectional width in its one end (top) far from substrate 100.The hole 120 ' can through the pixel defining layer 120 from And expose hearth electrode 110, can also only through part thickness pixel defining layer 120.As a unrestricted example, The hole 120 ' is perpendicular to substrate surface and is parallel to the section (longitudinal section) of pixel defining layer width direction in trapezoid, excellent Choosing, the longitudinal section in the hole 120 ' is isosceles trapezoid.Since the hole 120 ' and pixel openings 130 are up-narrow and down-wide Structure, can by a patterning processes, such as exposure development technique and/or dry carving technology, be formed simultaneously the hole 120 ' and Pixel openings 130, that is, while forming pixel defining layer 120, form hole 120 ' also in pixel defining layer 120, in this way may be used To save exposure mask cost, simplification of flowsheet.The presence in the hole 120 ' can be further improved the viscous of thinner package film layer 160 Attached property, avoid between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or shifting phenomena.
Embodiment six
Above embodiments describe the method for forming recess by patterning process, which includes that exposure is aobvious Shadow technique and/or etching technics.And in the present embodiment, then it is to form pixel list after forming functional layer and top electrode After member, using laser (or dry etching etc.) technique, smash the part OLED film layer of dead space in product to form recess, The region that thin-film encapsulation layer is directly contacted with lower pixel definition layer is created, improves the adhesive force of encapsulation film layer whereby.
Figure 15 is a kind of schematic diagram for the distribution being recessed in the present embodiment, as shown in figure 15, by red sub-pixel R, green The four corners for the pixel unit that sub-pixel G, blue subpixels B are constituted respectively are distributed a recess 170.Certainly, the present invention is real Quantity and distributing position that example is not intended to limit recess 170 are applied, for example, it is multiple to can also be that the four corners of pixel unit are respectively distributed Recess 170, is also possible to that recess 170 only is distributed in a corner of pixel unit.The recess 170 can uniformly divide Cloth is also possible to heterogeneous be distributed on substrate on substrate.The recess 170 can correspond to the position of pixel defining layer It sets, is also possible to the position corresponded to except pixel defining layer.It, can by taking the position corresponding to pixel defining layer that is recessed as an example To be through the pixel defining layer of segment thickness or full depth, be also possible to through full depth pixel defining layer and The planarization layer of segment thickness or full depth.Certainly, the recess may also extend through top electrode above pixel defining layer and Functional layer.The present invention does not limit the depth of recess, as long as the part for corresponding to dead space in product smash being formed Recess, those skilled in the art can correspondingly select suitable depth according to specific product design situation, as long as not shadow Ring normal luminous.
Specifically, as shown in figure 16, light shield shading can be used, full plate scanning is carried out with laser, the laser through light shield is The film layer that target area can be smashed, smash at form recess, keep thin-film encapsulation layer straight with lower pixel definition layer through being recessed Contact, increases its adhesive force.Laser cutting instrument etc. equipment can be used to execute and above-mentioned smash movement, those skilled in the art It specific laser energy is set and selects suitable light shield according to specific needs, not limit herein.
In addition, the present embodiment is to the concrete shape for being formed by recess using the above method and is not construed as limiting, recess 170 Shape preferably can be one of cylindrical body, Elliptic Cylinder, rotary table, cuboid or square or any combination, it is described recessed Fall into 170 or non-regular shape.Also, the shape (and size) of the recess on each region can be identical, can also not It is identical.
Embodiment seven
Figure 17 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention seven.As shown in figure 17, which shows Panel includes substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel Definition layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.In addition, described OLED display panel further includes the boss 180 being formed in pixel defining layer 120.
In conjunction with shown in Figure 18 a and Figure 18 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone. OLED display panel includes luminous zone and non-light-emitting area, the pixel openings 130 of pixel defining layer 120 be used to define luminous zone and Non-light-emitting area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Function Ergosphere 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, However be only that 130 corresponding part of pixel openings shines, constitute luminous zone.
Wherein, cross-sectional width of the pixel defining layer 120 close to one end (bottom end) of substrate 100 is greater than it far from substrate 100 One end (top) cross-sectional width.Cross-sectional width of the boss 180 close to one end (bottom end) of pixel defining layer 120 is less than it The cross-sectional width of one end (top) far from pixel defining layer 120.Specifically, pixel defining layer 120 is vertical in the present embodiment In substrate surface and the section (longitudinal section) of pixel defining layer width direction is parallel in trapezoid, and boss 180 is perpendicular to substrate Surface and the section (longitudinal section) for being parallel to pixel defining layer width direction are in inverted trapezoidal, the bottom end of boss 180 and pixel definition The top of layer 120 is in contact.Also, the cross-sectional width on the top of the pixel defining layer 120 is greater than the pixel defining layer The cross-sectional width on 120 top.In this way, just constitute recess 170, film between pixel defining layer 120 and boss 180 In encapsulation process, thin-film encapsulation layer flows into recess 170 and forms anchoring structure, reaches and improves the glutinous of thin-film encapsulation layer and substrate Attached power and the effect for preventing OLED film layer from separating.On the other hand, the boss 180 may also function as supporting role, for example, subsequent When vapor deposition forms functional layer, certain supporting role can be played to vapor deposition mask plate, and, shape is needed if applying in hard screen When at glass cover-plate, also there is certain supporting role to glass cover-plate, prevents glass cover-plate in bonding processes from rupturing.
The longitudinal section of the pixel defining layer 120 is preferably isosceles trapezoid, and the longitudinal section of the boss 180 is preferably Isosceles inverted trapezoidal.In specific implementation, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, for example, the picture The longitudinal section of plain definition layer 120 is also possible to the up-narrow and down-wide shape or inverted trapezoidal other than other shapes, such as trapezoid Deng the longitudinal section of the boss 180 is also possible to the shape wide at the top and narrow at the bottom other than inverted trapezoidal.It is understood that no matter pixel What shape definition layer 120 is, as long as cross-sectional width of the boss 180 close to one end (bottom end) of pixel defining layer 120 is less than it The cross-sectional width of one end (top) far from pixel defining layer 120, may make up recess 170.
The production process of OLED display panel as above is introduced below with reference to Figure 18 a to Figure 18 b.
Firstly, providing a substrate 100, and form conductive film on the substrate 100 in conjunction with shown in Figure 18 a, and thoroughly by this Bright conductive film pattern, forms multiple hearth electrodes 110, multiple hearth electrodes 110 respectively with the driving crystal of different pixels unit The drain electrode of pipe is connected.
Then, it continues to refer to figure 1 shown in 8a, prepares one layer of polymeric on hearth electrode 110 for example, by the method for spin coating Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer 120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is When photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is non-photosensitive polymers When) thin polymer film is graphical, to form several pixel openings 130.
With reference to shown in Figure 18 b, pixel defining layer 120 and then the secondary method for example, by spin coating are formed in pixel definition One layer of polymeric film is prepared on layer 120, and boss 180 is formed using corresponding patterned way according to the attribute of polymer, The boss 180 is set on pixel defining layer 120.Specifically, can be by the method for exposure development (when the polymer is When photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is non-photosensitive polymers When) thin polymer film is graphical, to form boss 180.
Wherein, boss 180 can be identical with the material of pixel defining layer 120, can not also be identical.With the two by same For kind photosensitive polymers are made, under type such as can be used and be respectively formed boss 180 and pixel defining layer 120: firstly, adopting It uses positive photoresist as exposure mask, forms the pixel defining layer of trapezoid using exposure development technique；Then, using negative photoresist conduct Exposure mask forms the boss 180 of inverted trapezoidal using exposure development technique.The overall thickness of the pixel defining layer 120 and boss 180 (height) for example between 2 μm~8 μm, in this way, i.e. it is advantageously ensured that thickness will not flexibility that is too high and influencing display panel Performance, and it is advantageously ensured that thickness will not it is too small and influence pixel defining layer define and support function.
Followed by the mode by the way that mode or inkjet printing is such as deposited forms thin-film encapsulation layer 160.Due to recess 170 Presence, thin-film encapsulation layer 160 can be filled it is described recess 170, so, be filled in recess 170 in thin-film encapsulation layer 160 are equivalent to and constitute several anchoring structures, effectively enhance the anti-shearing force of OLED display panel, can avoid thin-film package Layer occurs separating or shift between top electrode and inside functional layer between each film layer.Wherein, thin-film package preferably uses and has The mode of machine material and inorganic material combination, for example inorganic material/organic material/inorganic material laminated construction is used, tool Body, following several combinations: silicon nitride/organic material/silicon nitride can be used；Aluminium oxide+silicon nitride/organic material/ Silicon nitride+aluminium oxide；Silica+silicon nitride/organic material/silicon nitride+silica.
In specific implementation, it may also be formed with boss openings (not shown) in the boss 180, the boss openings are leaned on The cross-sectional width of one end (bottom end) of nearly substrate 100 is greater than the cross-sectional width of its one end (top) far from substrate 100.It is described Boss openings can run through the boss 180 and pixel defining layer 120, can also only through part thickness boss 180, may be used also Through the pixel defining layer 120 of boss 180 and segment thickness.Certainly, the boss openings may also be through the picture The planarization layer that segment thickness is also extended downwardly through after plain definition layer 120 is also possible to through the pixel defining layer 120 Extend downwardly through entire planarization layer also afterwards to expose the film layer (such as passivation layer) below planarization layer.It is described convex The cross-sectional shape of platform opening can be circle, ellipse, triangle, rectangle or other polygons.The boss openings are hung down Directly in substrate surface and the section (longitudinal section) of pixel defining layer width direction is parallel to preferably in trapezoid.It can be by primary Patterning processes, such as exposure development technique and/or dry carving technology, are formed simultaneously boss 180 and boss openings, that is, form boss While 180, boss openings are also formed in boss 180, can save exposure mask cost, simplification of flowsheet in this way.It is described convex The presence of platform opening can be further improved the adhesiveness of thinner package film layer 160, avoid between thin-film encapsulation layer and cathode and Occur inside functional layer separating between each film layer or shifting phenomena.
Embodiment eight
Figure 19 is the diagrammatic cross-section of OLED display panel in the embodiment of the present invention.As shown in figure 19, the OLED display surface Plate includes that substrate 100 and the hearth electrode 110 being formed on the substrate 100 (anode referred in the present embodiment), pixel are fixed Adopted layer 120, functional layer 140, top electrode 150 (cathode referred in the present embodiment) and thin-film encapsulation layer 160.In addition, described OLED display panel further includes the boss 180 being formed in pixel defining layer 120.
In conjunction with shown in Figure 20 a and Figure 20 b, pixel defining layer 120 is provided with the pixel openings 130 corresponding to luminous zone. OLED display panel includes luminous zone and non-light-emitting area, the pixel openings 130 of pixel defining layer 120 be used to define luminous zone and Non-light-emitting area, the corresponding region of pixel openings 130 are luminous zone, and the region other than pixel openings 130 is non-light-emitting area.Function Ergosphere 140 and top electrode 150 can not only be provided in pixel openings 130, also can be set above pixel defining layer 120, However be only that 130 corresponding part of pixel openings shines, constitute luminous zone.
Wherein, thin-film encapsulation layer 160 is arranged alternately by organic film and inorganic film and is constituted.It is described thin in the present embodiment Film encapsulated layer 160 includes three-decker, respectively the first film encapsulated layer 161, the second thin-film encapsulation layer 162 and third film Encapsulated layer 163.Wherein, the first film encapsulated layer 161 and third thin-film encapsulation layer 163 are inorganic film, the second thin-film encapsulation layer 162 be organic film.Wherein, the first film encapsulated layer 161 and third thin-film encapsulation layer 163 can use silica (SiO2)、 Silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.Preferably, convex The top of platform 180, is all the first film encapsulated layer 161 of inorganic film and third thin-film encapsulation layer 163 contacts with each other (without the Two thin-film encapsulation layers 162), and at other positions it is then the first film encapsulated layer 161, the second thin-film encapsulation layer 162 and third Thin-film encapsulation layer 163 stacks gradually.In this way, the binding force of inorganic film is stronger at 180 position of boss, the anti-of OLED can be improved Shearing force.The pixel defining layer 120 and the overall thickness (height) of boss 180 are for example between 2 μm -8 μm, in the present embodiment, The pixel defining layer 120 and the overall thickness (height) of boss 180 are for example between 3 μm -4 μm, the first film encapsulated layer 161 thickness is between 0.5 μm -1.5 μm, and the thickness of second thin-film encapsulation layer 162 is between 2 μm -3 μm, also, The sum of 162 thickness of one thin-film encapsulation layer 161 and the second thin-film encapsulation layer is equal to pixel defining layer 120, boss 180 and first The sum of 161 thickness of thin-film encapsulation layer, that is, 161 top surface of the first film encapsulated layer of the top of boss 180 and at other positions the Two thin-film encapsulation layers, 162 top surface flushes, so that the first film encapsulated layer 161 of 180 top of boss be made directly to seal with third film Layer 163 is filled to contact.
Further, cross-sectional width of the pixel defining layer 120 close to one end (bottom end) of substrate 100 is greater than it far from base The cross-sectional width of one end (top) of plate 100.Cross-sectional width of the boss 180 close to one end (bottom end) of pixel defining layer 120 is small Cross-sectional width in its one end (top) far from pixel defining layer 120.Specifically, in the present embodiment, pixel defining layer 120 Perpendicular to substrate surface and the section (longitudinal section) of pixel defining layer width direction is parallel in trapezoid, and boss 180 is vertical In substrate surface and the section (longitudinal section) of pixel defining layer width direction is parallel in inverted trapezoidal, the bottom end of boss 180 and picture The top of plain definition layer 120 is in contact.Also, the cross-sectional width on the top of the pixel defining layer 120 is fixed greater than the pixel The cross-sectional width on the top of adopted layer 120.In this way, recess 170 is just constituted between pixel defining layer 120 and boss 180, During thin-film package, thin-film encapsulation layer flows into recess 170 and forms anchoring structure, reaches and improves thin-film encapsulation layer and substrate Adhesive force and prevent OLED film layer separate effect.On the other hand, the boss 180 may also function as supporting role, for example, When subsequent vapor deposition forms functional layer, certain supporting role can be played to vapor deposition mask plate (mask), and, if applying to hard When needing to form glass cover-plate in screen, also there is certain supporting role to glass cover-plate, prevents glass cover-plate in bonding processes Rupture.
The longitudinal section of the pixel defining layer 120 is preferably isosceles trapezoid, and the longitudinal section of the boss 180 is preferably Isosceles inverted trapezoidal.It should be understood that in specific implementation, the longitudinal section of the pixel defining layer 120 is also possible to other shapes, than Such as, the longitudinal section of the pixel defining layer 120 be also possible to up-narrow and down-wide shape other than other shapes, such as trapezoid or Inverted trapezoidal etc., the longitudinal section of the boss 180 are also possible to the shape wide at the top and narrow at the bottom other than inverted trapezoidal.
The production process of OLED display panel as above is introduced below with reference to Figure 20 a to Figure 20 b.
Firstly, providing a substrate 100, and form conductive film on the substrate 100, and this is led in conjunction with shown in Figure 20 a Conductive film is graphical, forms multiple hearth electrodes 110, multiple hearth electrodes 110 respectively with the driving transistor of different pixels unit Drain electrode is connected.
Then, with continued reference to shown in Figure 20 a, one layer of polymeric is prepared on hearth electrode 110 for example, by the method for spin coating Film, and pixel defining layer 120, the pixel defining layer are formed using corresponding patterned way according to the attribute of polymer 120 are provided with the pixel openings 130 corresponding to luminous zone.Specifically, can be by the method for exposure development (when the polymer is When photosensitive polymers) or by the method for exposure development and dry etching (when the polymer is non-photosensitive polymers When) thin polymer film is graphical, to form several pixel openings 130.Similarly, it is formed after pixel defining layer 120, One layer of polymeric film is prepared in pixel defining layer 120 again by the method for such as spin coating, and according to the attribute of polymer Boss 180 is formed using corresponding patterned way, the boss 180 is set on pixel defining layer 120.Specifically, can By the method (when the polymer is photosensitive polymers) of exposure development or pass through exposure development and dry etching Method (when the polymer is non-photosensitive polymers) is graphical by the thin polymer film, to form boss 180.Its In, boss 180 can be identical with the material of pixel defining layer 120, can not also be identical.Gathered with the two by same light sensitivity For conjunction object is made, under type such as can be used and be respectively formed boss 180 and pixel defining layer 120: firstly, being made using positive photoresist For exposure mask, the pixel defining layer of trapezoid is formed using exposure development technique；Then, exposure is utilized as exposure mask using negative photoresist The boss 180 of photo development processes formation inverted trapezoidal.The pixel defining layer 120 and the overall thickness (height) of boss 180 are for example Between 2 μm -8 μm.
Followed by as shown in fig. 20b, the mode by the way that mode or inkjet printing is such as deposited sequentially forms functional layer 140 With top electrode 150, and, the first film encapsulated layer 161 is formed by way of such as CVD.The first film encapsulated layer 161 is Inorganic film can use silica (SiO2), silicon nitride (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in it is any One or more kinds of combinations.The thickness of the first film encapsulated layer 161 is between 0.5 μm -1.5 μm.
Then, as shown in figure 19, the second thin-film encapsulation layer 162 and third thin-film encapsulation layer 163 are formed.Second thinner package Film layer 162 is organic film, can fill recess 170 and contact with pixel defining layer 120.Second thin-film encapsulation layer 162 Thickness between 2 μm -3 μm.Third thin-film encapsulation layer 162 is similarly inorganic film, can use silica (SiO2), nitrogen SiClx (SiN), aluminium oxide (Al2O3), titanium oxide (TiO2) in any one or a variety of combinations.
In the present embodiment, 162 top surface of the second thinner package film layer and the first film encapsulated layer 161 above boss Top surface flushes, and the top surface of the first film encapsulated layer 161 is exposed, when being subsequently formed third thin-film encapsulation layer 163 in this way, It is all that the third thin-film encapsulation layer 163 of inorganic film and the first film encapsulated layer 161 contact with each other above boss 180, this Being equivalent to the inorganic film at 180 position of boss and being combined (is then that organic film is contacted with inorganic film at other positions (such as third thin-film encapsulation layer 163 and the second thin-film encapsulation layer 162)) the experiment has found that such combination is conducive to improve The anti-shearing force of OLED.
In specific implementation, it may also be formed with boss openings (not shown) in the boss 180, the boss openings are leaned on The cross-sectional width of one end (bottom end) of nearly substrate 100 is greater than the cross-sectional width of its one end (top) far from substrate 100.It is described Boss openings can run through the pixel defining layer 120 of the boss 180 and segment thickness or full depth, can also only through-Penetration portion Divide the boss 180 of thickness.The cross-sectional shape of the boss openings can for circle, ellipse, triangle, rectangle or its His polygon.The boss openings are perpendicular to substrate surface and are parallel to the section (longitudinal section) of pixel defining layer width direction It is preferred that being in trapezoid.Boss can be formed simultaneously by a patterning processes, such as exposure development technique and/or dry carving technology 180 and boss openings, that is, while forming boss 180, also form boss openings in boss 180, can save cover in this way Film cost, simplification of flowsheet.The presence of the boss openings can be further improved the adhesiveness of thinner package film layer 160, keep away Exempt between thin-film encapsulation layer and cathode and functional layer inside occur between each film layer separating or shifting phenomena.
Embodiment nine
As shown in figure 21, the present embodiment provides a kind of OLED display panel, including substrate 100 and it is formed in the base Hearth electrode, pixel defining layer 120, functional layer, top electrode and thin-film encapsulation layer on plate 100；120 shape of pixel defining layer At there is several pixel openings, the hearth electrode, functional layer and top electrode in the pixel openings constitute pixel unit.
The OLED display panel further includes the dike for being formed on the substrate 100 and surrounding the pixel defining layer 120 Dam is formed with several recess in the dykes and dams.
The dykes and dams e.g. include the first dykes and dams 191 and the second dykes and dams 192, and the first dykes and dams 191 surround pixel defining layer 120, the second dykes and dams 192 surround the first dykes and dams 191.
The thin-film encapsulation layer is, for example, to include the first film encapsulated layer 161 and setting in the first film encapsulation The second thin-film encapsulation layer 162 on 161 upper surface of layer.The first film encapsulated layer 161 is inorganic film, the second thin-film encapsulation layer 162 be organic film.
More than one recess 160 is provided at least one dykes and dams in first dykes and dams 191 and the second dykes and dams 192, such as Can be has more than one recess 160 on the first dykes and dams 191, be also possible to have more than one recess 160 on the second dykes and dams 192, Or first be both provided with recess 160 on dykes and dams 191 and the second dykes and dams 192.The recess 160 e.g. groove or through-hole, The shape of the recess 160 is a kind of in cylindrical body, Elliptic Cylinder, rotary table, inverted round stage, cuboid or square or it is any Combination.The recess 160 being arranged on 191 upper surface of the second dykes and dams 192 and the first dykes and dams, can prevent since inkjet printing is organic Organic gel is overflowed when film layer, stress when dispersion screen body is bent, while enhancing inorganic layer adhesive force.
First dykes and dams 191 and the second dykes and dams 192 can play the role of dam, can prevent from having when forming organic film The diffusion of organic matter in machine film layer.As shown in figure 21, the organic matter in organic film is by the first dykes and dams 191 and/or the second dike Dam 192 stops.Further, the recess that the first dykes and dams 191 and the gap between the two of second dykes and dams 192 are formed, can be with Be conducive to the spilling for stopping organic matter.
In the present embodiment, the organic film includes polymer.Polymer include polyethylene terephthalate, Polyimides, polycarbonate, epoxy resin, polyethylene and/or polyacrylate etc..Organic film can play absorption stress And ensure effect flexible.The material of the substrate includes polyimide, polyethylene terephthalate or plastics.
As illustratively, the plan view shape of the first dykes and dams 191 is circular, oval ring-type or polygon ring-type, described polygon Ring-type is, for example, square ring, diamond shape is cyclic annular, parallelogram is cyclic annular.Second dykes and dams 192 and 191 structure of the first dykes and dams are similar Seemingly, therefore not to repeat here.
In one embodiment, the display device further include: the upper of second thin-film encapsulation layer 162 is set Third thin-film encapsulation layer 163 on surface.In the present embodiment, the first film encapsulated layer 161 and third film envelope Filling layer 163 includes metal oxide and/or metal nitride.Metal oxide and/or metal nitride may include SiNx, Al2O3、SiO2And/or TiO2。
It should be understood that the shape for the recess 160 being arranged on 192 upper surface of the first dykes and dams 191 and the second dykes and dams can be identical, It can also be different, for example a part is circle, another part is rectangular；Alternatively, the first dykes and dams 191 and the second dykes and dams 192 opening Between shape is identical but size can be different；Again alternatively, the shape and size between two recess 160 are all different.And And the recess on two dykes and dams can also be with non-uniform Distribution in dykes and dams.The cross section of the recess 160 (is parallel to substrate side To section) shape be e.g. circle, triangle, rectangle, trapezoidal, diamond shape or irregular shape.
The present embodiment also provides a kind of OLED display panel preparation method, comprising:
One substrate is provided, hearth electrode, pixel defining layer, functional layer, top electrode, the pixel are formed on the substrate Definition layer is formed with several pixel openings, and the hearth electrode, functional layer and top electrode in the pixel openings constitute pixel Unit；
It is formed on the substrate around the first dykes and dams 191 and the second dykes and dams 192 around pixel unit, described first Dykes and dams 191 are arranged close to the pixel unit, and second dykes and dams 192 are in first dykes and dams 191 far from the pixel unit Side setting；And
More than one is formed at least one dykes and dams in first dykes and dams 191 and second dykes and dams 192 to open Mouthful.
To sum up, a kind of OLED display panel provided in this embodiment is recessed by the one or more being arranged on dykes and dams It falls into, prevents the spilling of organic gel when due to inkjet printing organic film, reduce because TFE encapsulation is lost caused by organic film is excessive Effect has dispersed to shield stress when body bending, while having enhanced inorganic layer adhesive force.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book With the other embodiments of understanding.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims Range.

Claims (10)

1. a kind of OLED display panel, which is characterized in that fixed including substrate and the hearth electrode being formed on the substrate, pixel Adopted layer, functional layer, top electrode and thin-film encapsulation layer；The pixel defining layer is formed with several pixel openings, is located at the pixel Hearth electrode, functional layer and top electrode in opening constitute pixel unit；The OLED display panel further includes being formed at least Boss on partial pixel definition layer, the thin-film encapsulation layer include the first film encapsulated layer, the second thin-film encapsulation layer and third Thin-film encapsulation layer, the first film encapsulated layer and third thin-film encapsulation layer are inorganic film, and second thin-film encapsulation layer is Organic film, the third thin-film encapsulation layer above the boss are in contact with the first film encapsulated layer.
2. OLED display panel as described in claim 1, which is characterized in that the boss is close to one end of pixel defining layer Cross-sectional width is less than the cross-sectional width of its one end far from pixel defining layer, constitutes between the pixel defining layer and boss recessed It falls into, the thin-film encapsulation layer fills the recess.
3. OLED display panel as claimed in claim 2, which is characterized in that the boss is perpendicular to substrate surface and is parallel to The section of pixel defining layer width direction is in inverted trapezoidal.
4. OLED display panel as described in claim 1, which is characterized in that the pixel defining layer is close to one end of substrate Cross-sectional width is greater than the cross-sectional width of its one end far from substrate.
5. OLED display panel as described in claim 1, which is characterized in that be also formed with boss openings, institute in the boss Boss openings are stated at least partially through the boss.
6. OLED display panel as claimed in claim 5, which is characterized in that the OLED display panel further includes being formed in institute The planarization layer on substrate is stated, the hearth electrode is formed on the planarization layer；The boss openings also extend through segment thickness Or the pixel defining layer of full depth, alternatively, the boss openings also extend through the pixel defining layer and part thickness of full depth The planarization layer of degree or full depth.
7. OLED display panel as described in claim 1, which is characterized in that be formed with one or more on each pixel unit The boss.
8. OLED display panel as described in claim 1, which is characterized in that the material of the boss and the pixel defining layer It is identical.
9. OLED display panel as described in claim 1, which is characterized in that the pixel defining layer and the overall thickness of boss exist Between 2 μm -8 μm.
10. a kind of OLED display panel preparation method characterized by comprising
One substrate is provided；And
Hearth electrode, pixel defining layer, functional layer, top electrode and thin-film encapsulation layer, the pixel definition are formed on the substrate Layer is formed with several pixel openings, and several boss are also formed in the OLED display panel, and the thin-film encapsulation layer includes The first film encapsulated layer, the second thin-film encapsulation layer and third thin-film encapsulation layer, the first film encapsulated layer and third film envelope Dress layer is inorganic film, and second thin-film encapsulation layer is organic film, the third thin-film encapsulation layer above the boss and the One thin-film encapsulation layer is in contact.
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