CN106611769A - Organic electroluminescent element - Google Patents
Organic electroluminescent element Download PDFInfo
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- CN106611769A CN106611769A CN201510676867.3A CN201510676867A CN106611769A CN 106611769 A CN106611769 A CN 106611769A CN 201510676867 A CN201510676867 A CN 201510676867A CN 106611769 A CN106611769 A CN 106611769A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an organic electroluminescent element, which comprises a thin film transistor array substrate and an organic light-emitting diode, and is characterized in that the organic light-emitting diode comprises an anode, an organic functional layer, a cathode, a pixel defining layer, a protection layer and a packaging cover plate; the anode comprises a silver thin film, and the anode is arranged on a thin film transistor array and is electrically connected to a thin film transistor; the organic functional layer comprises at least one organic light-emitting layer and is located on the anode; the cathode is located on the organic functional layer; the pixel defining layer is used for defining a pixel region; the protection layer is located between the anode and the pixel defining layer; and the packaging cover plate is located at a light emitting side of the organic light-emitting diode so as to package the organic light-emitting diode in a sealed space between the packaging cover plate and the thin film transistor array substrate. The protection layer can prevent migration of silver ions, and avoids metamorphism of the silver thin film at the same time.
Description
Technical field
The present invention relates to a kind of organic electroluminescent device (OLED), specifically, is related to a kind of anti-
The organic electroluminescent device that only silver ion migration and Ag films go bad.
Background technology
In OLED Display Techniques, active organic electroluminescent device (AMOLED) is by adopting
Current control luminous organic material luminescence display image.Such devices are required for by thin film transistor (TFT)
(TFT) array base palte is realizing driving and control function of the electric current to Organic Light Emitting Diode, the TFT
Array base palte includes scan line, holding wire and TFT, and electric current is relied between the anode and the cathode by rear
The resonance of electronics and hole is carried out in resonant cavity, exciting for OLED material is produced and is produced luminous.
In top-emitting OLED device, anode adopts reflective anode electrode, the light that luminescent layer sends via
The reflective anode electrode reflects and projects from upper surface.As shown in figure 1, anode 1 is located at planarization layer (not
Illustrate) on and contact with pixel defining layer 2, the anode 1 is generally by first as positive contact layer
The stacking of ITO layer (tin indium oxide) 11, the metal level 12 as reflecting layer and the second ITO layer 13 is constituted.
Wherein, the first ITO layer 11 and the second ITO layer 13 have good conductivity, transmitance height, work function high
The advantages of, display efficiency can be effectively improved.Reflecting layer requires there is high reflectance, low-resistivity, generally
There are the good metal Ag films 12 of high reflection low absorption characteristic and electric conductivity using in visible region.Pixel
Definition layer 2 covers the side of anode 1 and portion of upper surface, and in the side of anode 1 and Ag films 12
Contact.
Inventor carries out SEM point at the interface to prior art Anodic 1 and pixel defining layer 2
Find during analysis, in anode 1, Ag films 12 occur protuberance, as shown in Figure 2.Device is in after discharge mistake
In journey, electric current easily concentrates on bump pad, and thus defect Ag films 12 easily produce silver ion migration, this
Sample negative electrode is susceptible to short circuit, and then creating subpixel dim spot when luminous with anode, affects illumination effect.
The content of the invention
For the deficiencies in the prior art, the present invention provides a kind of organic electroluminescent device, including：
One thin-film transistor array base-plate；
One Organic Light Emitting Diode, including：
One anode, the anode include an Ag films, and the anode is arranged at the thin film transistor (TFT) battle array
On row and it is electrically connected to the thin film transistor (TFT)；
One organic function layer, the organic function layer at least include an organic luminous layer and positioned at anode it
On；
One negative electrode, the negative electrode are located on organic function layer；And
One pixel defining layer, to define pixel region；
One protective layer, the protective layer are located between the anode and the pixel defining layer；And
One encapsulation cover plate, goes out light side positioned at the Organic Light Emitting Diode, by the organic light emission
In sealing space of the diode package between the encapsulation cover plate and the thin-film transistor array base-plate.
Further, the protective layer at least covers the anode portion contacted with the pixel defining layer
Point.
Further, the protective layer only covers the anode portion contacted with the pixel defining layer
Point.
Further, the protective layer is prepared by inorganic material and is formed.
Further, the protective layer material is nitride or nitrogen oxides.
Further, the protective layer thickness be more than
Further, the protective layer at least covers side and the upper surface of the anode.
Further, the protective layer is prepared by conducting semiconductor material and is formed.
Further, the protective layer material is tin indium oxide.
Further, the protective layer thickness is
Further, the anode also includes the first conductive layer and the second conductive layer, and the Ag films are located at
Between first conductive layer and the second conductive layer.
Compared with prior art, what the present invention was provided at least has the effect that：
1st, during protective layer can effectively prevent anode there is protuberance in Ag films, thus in discharge process, prevent
Only cause negative electrode to be short-circuited with anode because migration silver ion occurs, affect illumination effect.
2nd, sulfide and oxide are contained in the organic material used by pixel defining layer, and argent
Matter is active, unstable, easily cures and aoxidizes, and the protective layer of the present invention can be effectively isolated pixel definition
Layer and Ag films, it is to avoid Ag films occur rotten.
Description of the drawings
Fig. 1 is the structural representation of prior art Anodic and pixel defining layer；
Fig. 2 is the SEM figures of Ag films and the interface of pixel defining layer；
Fig. 3 is the interface interaction power analysis schematic diagram of Ag films and pixel defining layer in anode；
Fig. 4 A～Fig. 4 F are the preparation process schematic diagrams of the protective layer of the anode of one embodiment of the invention；
Fig. 5 A～Fig. 5 E are the preparation process schematic diagrams of the protective layer of the anode of another embodiment of the present invention.
Wherein, description of reference numerals is as follows：
1：Anode 11：First ITO layer
12：Ag films 13：Second ITO layer
2：Pixel defining layer 3：Protective layer
4：Photoresist mask
Specific embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can
Implement in a variety of forms, and be not understood as limited to embodiment set forth herein；On the contrary, there is provided this
A little embodiments cause the present invention fully and completely, and the design of example embodiment comprehensively will be passed on
To those skilled in the art.In figure, identical reference represents same or similar structure, thus
Repetition thereof will be omitted.
It is upper and lower in the present invention, between, first-class part be to enter by taking accompanying drawing as an example to direction and location expression
Capable explanation, but can also make a change as needed, done change is all contained in the scope of the present invention
It is interior.Term first, second is only used for describing purpose, and it is not intended that indicating or implying relative importance
Or the implicit quantity for indicating indicated technical characteristic.
There is the phenomenon of protuberance for Ag films 12 in anode 1, inventor has probed into generation, and this is asked
The reason for topic.Anode of the prior art 1 is combined using ITO/Ag/ITO, detects ITO in the combination
The stress value of layer and Ag films.Test instrunment is general known on the market or membrane stress tester.
Detection method is：The silicon wafer being attached on substrate is put into into membrane stress tester, before detection plated film
The membrane stress of silicon wafer itself, value A before obtaining；Silicon wafer is taken out, is plated in silicon wafer
The thin film of stress value to be detected；The silicon wafer for being coated with thin film is put into membrane stress tester to be detected,
Value B after obtaining one, rear value B deduct the stress value that front value A is the thin film.
Detected using said method, in reflective anode electrode, 12 stress value of Ag films is -34mPa,
Stress types are compression stress (Compress).13 stress value of first ITO layer 11 and the second ITO layer
For -167mPa, stress types are compression stress (Compress).And 2 stress value of pixel defining layer is
3400mPa, stress types are tensile stress (Tensile).Therefore, such as (a), (b) in Fig. 3
It is shown, drawing membrane stress can be produced when Ag films 12 are contacted with pixel defining layer 2.Such as Fig. 3 institutes
Show, when two kinds of stress are isotropic stress (Isotropic Stress), in Ag films 12 and pixel
Beach cracking (Mud Flat Cracks) as shown in (c) in Fig. 3 can be produced on the contact surface of definition layer 2
Phenomenon；When two kinds of stress are anisotropic stress (Anisotropic Stress), Ag films 12 with
Straight crackle (the Straight as shown in (d) in Fig. 3 can be produced on the contact surface of pixel defining layer 2
Cracks)。
By above-mentioned analysis, after the completion of 1 operation of anode, Ag films 12 are contacted with pixel defining layer 2
When, due to Ag films 12 it is different from the membrane stress and stress types of pixel defining layer 2,12 meeting of Ag films
Cause to produce above-mentioned protuberance phenomenon because of 2 pullling for tensile stress of pixel defining layer.
Additionally, pixel defining layer 2 can be by some light-sensitive materials, polymeric material, Si oxide, silicon nitrogen
Compound is formed, and contains a small amount of sulfide and/or oxide, and argent property is active in the material for being used,
It is unstable, and 12 thinner thickness of Ag films, micro sulfide and oxide can destruction Ag films 12,
Therefore, Ag films 12 are easy to cure and aoxidize.
To avoid above-mentioned phenomenon from occurring, the present invention provides a kind of organic electroluminescent device, including：Thin film
Transistor (TFT) array base palte, the Organic Light Emitting Diode on tft array substrate, protection
Layer, and encapsulation cover plate.
The tft array of the present invention includes：It is active layer, grid, gate insulator, source electrode, drain electrode, blunt
Change the structures such as layer, planarization layer, said structure can be (heavy according to film layer structure Technology of the prior art
The techniques such as product, photoetching) sequentially form.
Organic Light Emitting Diode is arranged above tft array and is electrically connected to thin film transistor (TFT), including：
Anode 1, forms organic function layer (not shown), on anode 1 on organic function layer
Negative electrode (not shown), and pixel defining layer 2.Fig. 4 F and Fig. 5 E illustrate only anode 1 and pixel
2 structure of definition layer.
Anodic of the present invention 1 includes the Ag films 12 as reflecting layer.Ag films 12 can be that fine silver is thin
Film, or at least containing in Pd, Cu, Ti, Nb, Al, Pb, Au, Nd, Ca, Mg
A kind of elementary composition silver alloy film.Anode 1 can further include the first conductive layer and
Two conductive layers, Ag films 12 are located between first conductive layer and the second conductive layer.
Anode 1 can be by Ag films 12 and the first conductive layer and second made by other conducting semiconductor materials
Conductive layer stratification, the conducting semiconductor material can arbitrarily can be used as Organic Light Emitting Diode anode
Electro-conductive glass, including tin indium oxide (ITO), Al-Doped ZnO (AZO), indium-doped Zinc Oxide (IZO),
Antimony-doped stannic oxide (ATO) or fluorine doped tin oxide (FTO), but not limited to this.In one embodiment
In, the first conductive layer and the second conductive layer are ITO layer, anode 1 successively by the first ITO layer 11,
13 stratification of Ag films 12 and the second ITO layer, drawings and Examples are by taking the anode stepped construction as an example
It is described.Anode 1 can be formed using Technology of the prior art.
Organic function layer at least includes an organic luminous layer, can further include hole injection layer, sky
One layer in cave transport layer, electronic barrier layer, hole blocking layer, electron transfer layer, electron injecting layer or
Multilamellar.Organic function layer can adopt material of the prior art and Technology to sequentially form.
13 race's metals of alkali metal, alkaline-earth metal, transition metal and periodic chart can be used in negative electrode
And the alloy of above-mentioned metal etc., also use by conductive metal oxide, conducting organics and conductive half
The transparent conductive electrode of the compositions such as conductor material.Include as an example：Lithium, sodium, potassium, rubidium, caesium,
The gold such as beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium
Category, magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminium alloy, lithium-magnesium alloy,
Lithium-indium alloy, calcium-aluminium alloy etc., Indium sesquioxide., Zinc Oxide, stannum oxide, tin indium oxide (ITO) and
Conductive metal oxide and the conducting semiconductor materials such as indium-doped Zinc Oxide (IZO).Negative electrode can be using existing
There is the Technology in technology to be formed.
Reference picture 4F and Fig. 5 E, the pixel defining layer 2 of Organic Light Emitting Diode cover the side of anode 1
With part first surface (the present embodiment diagram in be upper surface), to limit pixel region, this
Bright that protective layer 3 is arranged between anode 1 and pixel defining layer 2, protective layer 3 is fixed with pixel by anode 1
Adopted layer 2 is kept apart, and anode 1 is protected.
During protective layer 3 can effectively prevent anode 1 there is protuberance in Ag films 12, thus in discharge process,
Prevent silver ion from migration occurring, it is to avoid negative electrode is occurred with the phenomenon that anode is short-circuited, and improves illumination effect.
As anode 1 is separated with 2 protected seam 3 of pixel defining layer, therefore, protective layer 3 can be played and prevent sun
The effect that Ag films 12 cure or aoxidize in pole 1.
Protective layer 3 can with covering part anode 1, as illustrated in figure 4f, wherein, protective layer 3 is at least covered
The anode part contacted with pixel defining layer 2, including side and the portion of upper surface of anode 1.At certain
In a little embodiments, protective layer 3 further can extend to non-light-emitting area from the side of anode 1, for example, extend
To region between pixel defining layer 2 and planarization layer.Protective layer 3 is preferably only covered and pixel defining layer 2
The anode part for contacting, thus, protective layer 3 will not stop that the light of the reflection of Ag films 12 is projected upwards,
So as to be conducive to improving aperture opening ratio.During 3 covering part anode 1 of protective layer, protective layer 3 can be by inorganic
Material prepares to be formed, and 3 stress value of protective layer that formed by inorganic material, stress types are similar with anode 1.
The thickness of the protective layer 3 formed by inorganic material can be more than
Available inorganic material includes but is not limited to one of following material and combinations thereof：Oxide, nitride,
Nitrogen oxides, fluoride, preferred oxides, nitride, nitrogen oxides, further preferred nitride,
Nitrogen oxides.Oxide include but is not limited to aluminium oxide, zirconium oxide, Zinc Oxide, titanium oxide, magnesium oxide,
Silicon oxide.Nitride includes but is not limited to silicon nitride, aluminium nitride, titanium nitride.Nitrogen oxides are included but not
It is limited to silicon oxynitride, aluminum oxynitride, titanium oxynitrides.Fluoride includes but is not limited to Afluon (Asta), sodium fluoride.
By inorganic material prepare protective layer 3 method include but is not limited to evaporation, sputtering, rotary coating,
Spraying, wire mark, ink jet printing, chemical vapor deposition (CVD).
Protective layer 3 can also be the protective clear layer of the side and whole upper surfaces for covering anode 1, such as scheme
Shown in 5E, protective layer 3 covers the anode part contacted with pixel defining layer 2, including anode sides
With overall upper surface.In certain embodiments, the side that protective layer 3 can be further from anode 1 extends to
Non-light-emitting area, for example, extend to region between pixel defining layer 2 and planarization layer.Protective layer 3 covers sun
When the side of pole 1 and whole upper surfaces, protective layer 3 can be prepared to be formed by conducting semiconductor material,
The high semi-conducting material of preferably clear degree, so as to increase the transmitance of the light of the reflection of Ag films 12.Formed
The thickness of protective layer 3 can beIt is preferred that
Available conducting semiconductor material includes but is not limited to tin indium oxide (ITO), Al-Doped ZnO
(AZO), indium-doped Zinc Oxide (IZO), antimony-doped stannic oxide (ATO), fluorine doped tin oxide (FTO)
One or a combination set of, preferred tin indium oxide (ITO).
The method that protective layer 3 is prepared by electrically conducting transparent semi-conducting material is including but not limited to deposited with, sputtering,
Rotary coating, spraying, wire mark, ink jet printing, chemical vapor deposition (CVD).
The embodiment of the present invention also provides a kind of preparation method of organic electroluminescent device, including following step
Suddenly：
Step one：A substrate is provided, the substrate can be rigid substrates, or flexible base board, wrap
Include but be not limited to glass substrate, quartz base plate, metal basal board, organic polymer substrate, metal-oxide
Substrate, using including the art methods cleaning base plate including ultrasonic cleaning etc.；
Step 2：Tft array is made on glass substrate after cleaning, related process flow process includes following
Several steps, the 1st step：Prepare polysilicon layer, the 2nd step：Prepare grid, the 3rd step：Prepare insulating barrier,
4th step：Form data line layer, the 5th step：Prepare cushion, the 6th step：Prepare planarization layer；
Step 3：Organic Light Emitting Diode is prepared on tft array, related process flow process includes following several
Step, the 1st step：Prepare the 1, the 2nd step of anode：Prepare the 3, the 3rd step of protective layer：Prepare pixel definition
The 2, the 4th step of layer：Organic function layer is prepared, the organic function layer at least includes an organic luminous layer, the
5 steps：Prepare negative electrode.
Step 4：An encapsulation cover plate is provided, cover plate material can be identical or different with substrate, is packaged work
Skill, the sealing by organic light-emitting diode packaging between encapsulation cover plate and thin-film transistor array base-plate are empty
In, form organic electroluminescent device.
The preparation process of protective layer in the present invention 3 is described in detail below by embodiment.
Embodiment 1：
Reference picture 4A to Fig. 4 F, after the completion of prepared by anode 1, prepares by inorganic material on anode 1
The protective layer 3 of composition, the protective layer 3 in the present embodiment cover the side of anode 1 and portion of upper surface.
Preparation process is as follows：
Step S1：As shown in Figure 4 A and 4 B shown in FIG., after the completion of the preparation of anode 1, in the side of anode 1
The protective layer 3 being made up of inorganic material is prepared on face and upper surface；
Step S2：As shown in Figure 4 C, the formation photoresist mask 4 on protective layer 3；
Step S3：As shown in Figure 4 D, the protective layer of the covering of glue mask 4 is not photo-etched by etching removal
3；
Step S4：As shown in Figure 4 E, peel off and remove photoresist mask 4, form protective layer 3.
Step S5：Then pixel defining layer 2 is formed on protective layer 3, as illustrated in figure 4f.
Embodiment 2：
Reference picture 5A to Fig. 5 E, after the completion of prepared by anode 1, prepares on anode 1 and is partly led by conduction
The protective layer 3 of body material composition, the protective layer 3 in the present embodiment are covered on the side and whole of anode 1
Surface.
Preparation process is as follows：
Step S1 '：As fig. 5 a and fig. 5b, after the completion of the preparation of anode 1, in the side of anode 1
The protective layer 3 being made up of conducting semiconductor material is prepared on face and upper surface；
Step S2 '：As shown in Figure 5 C, formation photoresist mask 4, protective mulch on protective layer 3
3 predeterminable area；
Step S3 '：As shown in Figure 5 D, unnecessary protective layer structure is etched, and stripping photoresist mask 4,
Form protective layer 3.
Step S4 '：Then pixel defining layer 2 is prepared on protective layer 3, as shown in fig. 5e.
The illustrative embodiments of the present invention are particularly shown and described more than.But, in this area
Those of ordinary skill, can also be right it is understood that in the case of without departing from the spirit and scope of the present invention
The specific embodiment of the present invention makees various changes and replacement.These changes and replacement all fall in present invention power
In sharp claim limited range.
Claims (11)
1. a kind of organic electroluminescent device, it is characterised in that include：
One thin-film transistor array base-plate；
One Organic Light Emitting Diode, including：
One anode, the anode include an Ag films, and the anode is arranged at the thin film transistor (TFT) battle array
On row and it is electrically connected to the thin film transistor (TFT)；
One organic function layer, the organic function layer at least include an organic luminous layer and positioned at anode it
On；
One negative electrode, the negative electrode are located on organic function layer；And
One pixel defining layer, to define pixel region；
One protective layer, the protective layer are located between the anode and the pixel defining layer；And
One encapsulation cover plate, goes out light side positioned at the Organic Light Emitting Diode, by the organic light emission
In sealing space of the diode package between the encapsulation cover plate and the thin-film transistor array base-plate.
2. organic electroluminescent device according to claim 1, it is characterised in that the protection
Layer at least covers the anode part contacted with the pixel defining layer.
3. organic electroluminescent device according to claim 1, it is characterised in that the protection
Layer only covers the anode part contacted with the pixel defining layer.
4. organic electroluminescent device according to claim 2, it is characterised in that the protection
Layer is prepared by inorganic material and is formed.
5. organic electroluminescent device according to claim 4, it is characterised in that the protection
Layer material is nitride or nitrogen oxides.
6. organic electroluminescent device according to claim 2, it is characterised in that the protection
Thickness degree be more than
7. organic electroluminescent device according to claim 1, it is characterised in that the protection
Layer at least covers side and the upper surface of the anode.
8. organic electroluminescent device according to claim 7, it is characterised in that the protection
Layer is prepared by conducting semiconductor material and is formed.
9. organic electroluminescent device according to claim 7, it is characterised in that the protection
Layer material is tin indium oxide.
10. organic electroluminescent device according to claim 7, it is characterised in that the protection
Thickness degree is
11. organic electroluminescent devices according to any one of claim 1 to 10, its feature
It is that the anode also includes the first conductive layer and the second conductive layer, the Ag films are located at described first
Between conductive layer and the second conductive layer.
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| CN110518053A (en) * | 2019-08-29 | 2019-11-29 | 合肥鑫晟光电科技有限公司 | Display base plate and preparation method thereof, display device |
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| CN109216407A (en) * | 2017-06-30 | 2019-01-15 | 昆山国显光电有限公司 | OLED display panel and preparation method thereof |
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| CN111987243A (en) * | 2020-08-11 | 2020-11-24 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
| CN111987243B (en) * | 2020-08-11 | 2021-11-02 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
| CN114203890A (en) * | 2021-12-10 | 2022-03-18 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
| CN114203890B (en) * | 2021-12-10 | 2024-01-26 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
| WO2023197359A1 (en) * | 2022-04-14 | 2023-10-19 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor, and display device |
| CN116782708A (en) * | 2023-06-20 | 2023-09-19 | 深圳市鸿展光电有限公司 | AMOLED display device with high brightness and high contrast and manufacturing process thereof |
| CN116782708B (en) * | 2023-06-20 | 2024-03-26 | 深圳市鸿展光电有限公司 | AMOLED display device with high brightness and high contrast and manufacturing process thereof |
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