CN109216399A - Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof - Google Patents
Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
The invention discloses inverted structure micro-dimension photonic crystal LED array chips and preparation method thereof.LED array chip of the invention, four luminescence unit parallel connections, is isolated between positive electrode metal contact wires and semiconductor material by dielectric insulation layer, negative electrode directly overlays semiconductor material upper surface；The active region of luminescence unit has the photonic crystal of period profile, and the depth of photonic crystal is more than the depth of active layer；In addition to electrode pad, medium DBR is all distributed in entire chip surface；Metal electrode constitutes metallic mirror.Preparation method of the invention, using the scheme for first preparing ohmic contact layer and electrode, rear etching photonic crystal, without conventional process flows such as planarizations；Using thicker strip dielectric insulation layer isolation electrode and semiconductor material, the scheme that relatively thin medium mask layer and glue mask layer etch jointly is conducive to the deposition of DBR and the quick evolution of photon mode；Process flow of the invention is simple, reliable.
Description
Technical field
The present invention relates to photonic crystal LED chip fields, and in particular to a kind of inverted structure micro-dimension photonic crystal LED battle array
Column chip and preparation method thereof.
Background technique
Visible light communication takes into account two kinds of functions of illumination and communication, becomes LED(light emitting diode) surmounting lighting area
One important breakthrough point.In visible light communication, the modulation bandwidth of luminescent device is an important factor for influencing message capacity.LED
Modulation bandwidth mainly influenced by RC constant and Carrier recombination rate.In order to reduce RC constant to promote RC bandwidth, can adopt
With micro-dimension chip；In order to improve Carrier recombination rate with promoted carrier limitation bandwidth, can be used resonant cavity, surface etc. from
Excimer and photonic crystal technology.
Micro-dimension chip had not only had lesser capacitor, but also saturation current density with higher, can effectively improve modulation
Bandwidth.But the active region area of single micro-dimension LED is smaller, Output optical power is smaller, and noise is poor, and being unfavorable for can
Light-exposed communication.
Photonic crystal LED enhances the photon local density of state of central wavelength by forbidden band effect, improves Carrier recombination speed
Rate is to promote carrier limitation bandwidth.The preparation of photonic crystal, which generally uses, " prepares photonic crystal à surface planarisation à dry method
Exposure semiconductor material à is etched to prepare ohmic contact layer à and prepare electrode " process flow.This process flow introduces three
Technological difficulties.Difficult point 1 is surface planarisation: the spin coating SOG(spin coating glass in the LED epitaxial wafer with photonic crystal) or BCB
Equal packing materials make epitaxial wafer surface planarisation, since packing material is liquid, readily along patterned after spin coated
Epitaxial wafer surface dipping and heaving, therefore planarization relatively difficult to achieve.Difficult point 2 is dry etching exposure semiconductor material: packing material
It is distributed in the gap between the surface and photonic crystal of photonic crystal, when carrying out dry etching, photonic crystal should be made
The packing material on surface is removed completely, makes packing material and semiconductor material in the gap between photonic crystal as far as possible again
Material surface flushes, it is therefore desirable to fine control.Difficult point 3 is to prepare ohmic contact layer: preparing ohm on the surface of photonic crystal
When contact layer, the contact area of ohmic contact layer and semiconductor material is smaller, therefore ohm contact performance is poor.
Summary of the invention
In view of this, the present invention provides a kind of inverted structure micro-dimension light to solve above-mentioned the problems of the prior art
Sub- crystal LED array chip and preparation method thereof, the chip are formed in parallel by four luminescence units, the active region of luminescence unit
With photonic crystal, chip surface preparation media DBR(distribution Bragg reflector) and metallic mirror formation inverted structure.
To achieve the above object, technical scheme is as follows.
A kind of inverted structure micro-dimension photonic crystal LED array chip, including four luminescence units, positive electrode pad and negative
Electrode pad, the positive electrode pad and negative electrode pad are distributed in the two sides of luminescence unit, phase in four luminescence units
The positive electrode of adjacent luminescence unit is successively connected in parallel by metal contact wires, wherein one end and connect with positive electrode pad, in 2
× 2 array distributions, negative electrode and the negative electrode pad of the luminescence unit link together；From metal electrode to light outgoing side
To the active region of the luminescence unit successively includes medium DBR, transparent current extending, p-type doped gan layer, p-type doping
AlGaN layer, quantum well layer, n-type doping GaN layer, unintentional doped gan layer, GaN buffer layer and jewel substrate；
The positive electrode area of the luminescence unit successively includes medium DBR, positive electrode, transparent current extending, p-type doping GaN
Layer, p-type doping AlGaN layer, quantum well layer, n-type doping GaN layer, unintentional doped gan layer, GaN buffer layer and sapphire lining
Bottom；
The negative electrode area of the luminescence unit successively includes medium DBR, negative electrode, n-type doping GaN layer, unintentional doping GaN
Layer, GaN buffer layer and Sapphire Substrate.
Further, it is isolated between the metal contact wires and semiconductor material by dielectric insulation layer, the semiconductor
Material includes transparent current extending, p-type doped gan layer, p-type doping AlGaN layer, quantum well layer, n-type doping GaN layer；It is described
The negative electrode of luminescence unit is covered on n-type doping GaN layer upper surface, and the active area diameter of the luminescence unit is 30~120 μm,
Photonic crystal is distributed with, the depth of the photonic crystal is greater than the depth of active layer, and diameter is 200~1000nm, removes positive electrode
Outside pad and negative electrode pad, medium DBR(distribution Bragg reflector is all distributed in entire chip surface).
Further, the luminescence unit is frustum cone structure, and the positive electrode of the luminescence unit is in the form of annular discs, is distributed in circle
The upper surface center of platform；The width of the metal contact wires is greater than 20 μm；The negative electrode and negative electrode of the luminescence unit weld
Disk links together in the form of sheets, and is distributed around rotary table and dielectric insulation layer.
Further, the dielectric insulation layer is strip, from the upper surface of the transparent current extending of luminescence unit, edge
Rotary table side wall extend downward into the upper surface of n-type doping GaN material, prolong upwards further along the rotary table side wall of adjacent light-emitting units
Extend to the upper surface of transparent current extending；The dielectric insulation layer material is SiO2, one or more of SiN, SiON, thickness
Greater than 500nm, width is greater than 20 μm of width or more of metal contact wires, metal contact wires is isolated with semiconductor material；It is described
Semiconductor material includes transparent current extending, p-type doped gan layer, p-type doping AlGaN layer, quantum well layer, n-type doping GaN
Layer.
Further, the single hole of the photonic crystal is in rounding bench-type, and the inclination angle between the side wall and top of rotary table is 65 °
~85 °, dielectric film is distributed with inside rotary table, the photonic crystal is triangular crystal lattice, tetragonal lattice or hexagonal lattice.
Further, the medium DBR is SiO2/SiN、SiO2/Ta2O5、SiO2/HfO2Or SiO2/ZrO2, and first layer
Medium is SiO2Film.
Further, the metal electrode constitutes metallic mirror, the metallic mirror include reflecting layer, barrier layer and
Protective layer, the reflecting layer and barrier layer connect, and the barrier layer and protective layer connect, the reflecting layer be Ag or
Al, the barrier layer are Ni, Cr or Ti, and the protective layer is Au, TiN or TiW, and the metallic mirror is in luminescence unit
The long reflectivity of cardiac wave is greater than 95%.
A kind of preparation method of inverted structure micro-dimension photonic crystal LED array chip, comprising the following steps:
Step 1 prepares GaN base LED epitaxial wafer, the structure of the GaN base LED epitaxial wafer using metal oxide vapor phase deposition method
It successively include Sapphire Substrate, GaN buffer layer, unintentional doped gan layer, n-type doping GaN layer, quantum well layer, p-type doping
AlGaN layer and p-type doped gan layer.
Step 2 deposits transparent current extending using electron beam evaporation in GaN base LED epitaxial wafer, through short annealing shape
At Ohmic contact, ultraviolet photolithographic and wet etching are reused, forms the transparent electric current being only distributed in the active region of luminescence unit
Extension layer disk；The annealing temperature of the rta technique is 500 ~ 650 DEG C, and heating rate is 5 ~ 15 DEG C/sec, and atmosphere is
The gaseous mixture of nitrogen and oxygen, annealing time are 60 ~ 300sec.
Step 3, using sense coupling, exposure n-type doping GaN layer forms the rotary table knot of luminescence unit
Structure.
Step 4, using plasma enhanced chemical vapor deposition preparation media insulating layer, reuse ultraviolet photolithographic and wet process
Corrosion, forms the dielectric insulation layer of strip.The dielectric insulation layer of strip is from the transparent current extending on the rotary table of luminescence unit
Upper surface, the upper surface of n-type doping GaN material is extended downward into along rotary table side wall, further along the circle of adjacent light-emitting units
Platform side wall extends upwardly to the upper surface of transparent current extending.
Step 5, using negtive photoresist removing and electron beam evaporation, discoid positive electrode is prepared on the rotary table of luminescence unit,
The negative electrode that sheet is prepared in the n-type doping GaN material of luminescence unit prepares rectangular positive electrode weldering in electrode pad region
Disk and negative electrode pad, and prepare the metal contact wires between positive electrode, between positive electrode and positive electrode pad；Metal contact wires
It is distributed on the dielectric insulation layer of strip.
Step 6, using plasma enhanced chemical vapor deposition preparation media mask layer, then use electron beam resist
Glue mask layer is prepared on medium mask layer, reuses electron beam exposure apparatus alignment, and carry out in the active region of luminescence unit
The exposure of periodic pattern, it is developed, fixing after on electron beam resist formed period profile airport；Then use etc. from
Daughter resist remover removes the remaining electron beam resist in airport bottom, reuses sense coupling for electron beam
Periodic pattern on photoresist is transferred to medium mask layer.
Step 7, using sense coupling, periodic pattern is successively transferred to transparent electricity from medium mask layer
Flow extension layer and GaN semiconductor material layer；The GaN semiconductor material includes p-type doped gan layer, p-type doping AlGaN layer, amount
Sub- well layer, n-type doping GaN layer；The etching depth of GaN semiconductor material is more than the depth 50nm or more of Quantum Well.
Step 8, using optical coating apparatus in GaN base LED epitaxial wafer preparation media DBR.
Step 9, using ultraviolet photolithographic and wet etching, in electrode pad region exposing metal electrode.
Compared with prior art, the invention has the advantages that and the utility model has the advantages that
(1) inverted structure micro-dimension photonic crystal LED array chip prepared by the present invention, on the one hand, using micro-dimension in parallel
Luminescence unit further improves Output optical power on the basis of keeping original modulation bandwidth；On the other hand, in micro-dimension
Photonic crystal is prepared on luminescence unit, is improved Carrier recombination rate, while improving luminous efficiency and modulation bandwidth, is conducive to mention
High visible traffic rate and message capacity.
(2) inverted structure micro-dimension photonic crystal LED array chip prepared by the present invention, using " preparing ohmic contact layer à
The dielectric insulation layer à for preparing strip prepares electrode à preparation media mask layer à spin coating glue mask layer à electron beam alignment exposure à etching
The process flow of photonic crystal à preparation media DBR " avoids and is typically prepared surface planarisation hardly possible, dry etching in process flow
Precise controlling hardly possible, three disadvantages of ohm contact performance difference, technique are simpler, reliable.
(3) the two-layered medium film scheme that the present invention is combined using strip buffer layer with medium mask layer, avoids
Not only the contradiction that separation layer is thicker but also requires mask layer relatively thin had been required in single-layer medium film scheme.In order in metal wire and semiconductor
Good isolation is formed between material, is needed using thicker buffer layer.According to the buffer layer of stratiform, the medium
Layer also covers the active region of luminescence unit, becomes the mask layer of active region；It, should when active region etches photonic crystal
Mask layer needs are etched away, therefore thicker buffer layer requires electron beam resist sufficiently thick or photoresist/medium
The etching selection ratio of layer is sufficiently large, so that electron beam exposure technology or photonic crystal etching technics cause very big difficulty.
According to the buffer layer of strip, which is distributed only between metal electrode and semiconductor material, then redeposition one
The relatively thin dielectric layer of layer is used for the etching of photonic crystal as mask layer, and the thickness of the medium mask layer can be according to photoresist/Jie
Matter mask layer, medium mask layer/transparent current extending, medium mask layer/GaN material etching selection ratio optimize, no
It is limited by the thickness of buffer layer.
(4) the two-layer compound exposure mask that the present invention is formed using medium mask layer and glue mask layer, the airport etched
The inclination angle of side wall is about 65 ° -85 °, is conducive to the deposition of DBR, and is conducive to the quick evolution of photon mode.And medium list
The inclination angle for the airport side wall that layer mask etching obtains is too small, is unfavorable for the deposition of DBR；The air that glue single layer mask etching obtains
The inclination angle of hole side wall is excessive, is unfavorable for realizing the preparation of the photonic crystal with lesser duty ratio.
Detailed description of the invention
Fig. 1 a is the top view illustration of inverted structure micro-dimension photonic crystal LED array chip in specific embodiment；
Fig. 1 b is that cross section of the inverted structure micro-dimension photonic crystal LED array chip at transversal AA ' shows in specific embodiment
It is intended to；
Fig. 2 a be embodiment 1 inverted structure micro-dimension photonic crystal LED array chip preparation process in prepare ohmic contact layer
And the top view illustration after the frustum cone structure of luminescence unit；
Fig. 2 b be embodiment 1 inverted structure micro-dimension photonic crystal LED array chip preparation process in prepare the medium of strip
Top view illustration after insulating layer；
After Fig. 2 c is prepares metal electrode in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1
Top view illustration；
Fig. 2 d is preparation media mask layer in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1
Top view illustration afterwards；
After Fig. 2 e is prepares photonic crystal in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1
Top view illustration；
Fig. 2 f is preparation media DBR in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1 and opens
Top view illustration after slot exposure electrode pad；
Fig. 3 a be embodiment 1 inverted structure micro-dimension photonic crystal LED array chip preparation process in prepare ohmic contact layer
And the cross-sectional view after the frustum cone structure of luminescence unit；
Fig. 3 b be embodiment 1 inverted structure micro-dimension photonic crystal LED array chip preparation process in prepare the medium of strip
Cross-sectional view after insulating layer；
After Fig. 3 c is prepares metal electrode in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1
Cross-sectional view；
Fig. 3 d is preparation media mask layer in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1
Cross-sectional view afterwards；
After Fig. 3 e is prepares photonic crystal in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1
Cross-sectional view；
Fig. 3 f is preparation media DBR in the inverted structure micro-dimension photonic crystal LED array chip preparation process of embodiment 1 and opens
Cross-sectional view after slot exposure electrode pad.
It include: 1 Sapphire Substrate in picture；2 GaN buffer layers；3 unintentional doped gan layer；4 n-type doping GaN layers；
5 quantum well layers；6 p-types adulterate AlGaN layer；7 p-type doped gan layer；8 transparent current extendings；9 dielectric insulation layers；10
Positive electrode；101 positive electrode pads；11 negative electrodes；111 negative electrode pads；12 metal contact wires；After 13 passivation layer depositions
Medium mask layer；Medium mask layer after 131 photonic crystals etching；The post-depositional medium mask layer of 132 DBR；14 photons
Crystal；The medium DBR of 15 chip surfaces；Dielectric film in 151 photonic crystal holes；Fluting on 16 electrode pads；81
The frustum cone structure of luminescence unit.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing, but implementation and protection scope of the invention is not
It is limited to this.
It is as illustrated in figs. 1A and ib one of specific embodiment of the invention inverted structure micro-dimension photonic crystal LED battle array
Column chip, GaN base LED array chip is by four luminescence units, a positive electrode pad 101 and one 111 groups of negative electrode pad
At；Four luminescence units are in 2 × 2 array distributions, and the positive electrode 10 of adjacent light-emitting units is realized simultaneously by the connection of metal wire 12
Connection, by the SiO of strip between metal contact wires 12 and semiconductor material ITO 82Dielectric insulation layer 9 is isolated；Negative electrode 11 is direct
It is covered on above semiconductor material ITO 8；Positive electrode pad is distributed in the right side of array of light emitting cells, and negative electrode pad is distributed in
The left side of array of light emitting cells.The active region of luminescence unit has the photon crystal 14 of period profile；Chip surface is distributed with
10 couples of SiO2/Ta2O5The medium DBR 15 of composition, reflectivity are 99.3%；Positive electrode 10, negative electrode 11, metal contact wires 12, just
Electrode pad 101, negative electrode pad 111 are all metallic mirrors, and structure type is Ag/ Ni/TiW, and reflectivity is 96%.
From reflecting mirror to light exit direction, the active region of luminescence unit successively includes medium DBR 15, the expansion of transparent electric current
It opens up layer ITO 8, p-type doped gan layer 7, p-type and adulterates AlGaN layer 6, quantum well layer 5, n-type doping GaN layer 4, unintentional doping GaN
Layer 3, GaN buffer layer 2 and Sapphire Substrate 1；In the positive electrode area of luminescence unit, medium DBR 15 and transparent electric current expand
There are also metallic reflection positive electrodes 10 between exhibition layer ITO 8；In the negative electrode area of luminescence unit, successively include medium DBR 15,
Metal negative electrode 11, n-type doping GaN layer 4, unintentional doped gan layer 3, GaN buffer layer 2 and Sapphire Substrate 1.From gold
Belong to electrode to light exit direction, electrode pad region successively includes that metal positive pole pad 101 and negative electrode pad 111, N-type are mixed
Miscellaneous GaN layer 4, unintentional doped gan layer 3, GaN buffer layer 2 and Sapphire Substrate 1.
Luminescence unit is in frustum cone structure, and the diameter of rotary table MESA 81 is 100 μm.The positive electrode 10 of luminescence unit is in disk
Shape, diameter are 30 μm, are distributed in the upper surface center of rotary table；The positive electrode 10 of adjacent light-emitting units is successively connected by metal wire 12
It connects, and is connect with positive electrode pad 101；The width of metal wire is 20 μm.The negative electrode 11 of luminescence unit is covered on semiconductor material
Expect the surface of ITO, the negative electrode 11 and negative electrode pad 111 of all luminescence units link together slabbing, and around
Rotary table 8 and strip dielectric insulation layer 9 are distributed.
The SiO of strip2Dielectric insulation layer 9, thickness are 1000nm, and width is 40 μm, from the rotary table 81 of luminescence unit
The upper surface of transparent current extending ITO 8 extends downward into the upper surface of n-type doping GaN material 4 along 81 side wall of rotary table,
The upper surface of transparent current extending ITO 8 is extended upwardly to further along 81 side wall of rotary table of adjacent light-emitting units.
The single hole 14 of the photonic crystal of triangular crystal lattice distribution is in rounding bench-type, and diameter is 350nm；The depth of rotary table is
520nm；Inclination angle between the side wall and top of rotary table is 75.8 °；Dielectric film 151 is distributed with inside rotary table.Due to photon crystalline substance
The aperture of body is smaller, in the same time, the film thickness that the film thickness deposited inside rotary table is deposited with chip surface not phase
Together, and being easy cross growth causes single hole to be closed, although therefore dielectric film 151 is still SiO2And Ta2O5Two kinds of material alternating growths
It is formed, but the thickness of every kind of material and medium DBR 15 be not identical.
The preparation step of embodiment 1, the inverted structure micro-dimension photonic crystal LED array chip is as follows.
(1) prepare GaN base LED epitaxial wafer using metal oxide vapor phase deposition method, the structure of GaN base LED epitaxial wafer according to
Secondary includes Sapphire Substrate 1, GaN buffer layer 2, unintentional doped gan layer 3, n-type doping GaN layer 4, quantum well layer 5, p-type doping
AlGaN layer 6 and p-type doped gan layer 7.
(2) transparent current extending ITO 8 is deposited in GaN base LED epitaxial wafer using electron beam evaporation, with a thickness of
100nm, in N2 200sccm、O2 Short annealing 3min forms Ohmic contact under the mixed atmosphere of 35sccm, reuses ultraviolet light
Quarter and wet etching impregnate 15min using ITO corrosive liquid at normal temperature, are formed only in the active region distribution of luminescence unit
ITO disk 8,98 μm of disk diameter.
(3) sense coupling is used, etch period 7min, exposes n-type doping GaN by 1.2 μm of etching depth
Layer 4, forms the rotary table MESA structure 81 of luminescence unit, MESA diameter is 100 μm.As shown by figures 2 a and 3.
(4) SiO is prepared using plasma enhanced chemical vapor deposition2Dielectric insulation layer deposits at 350 DEG C
1000nm.Ultraviolet photolithographic and wet etching are reused, the SiO of strip is formed2Dielectric insulation layer 9；The dielectric insulation layer 9 of strip is wide
Degree is 40 μm, and length is 40 μm, and the rotary table MESA 81 of adjacent light-emitting units is extended to from the rotary table MESA 81 of luminescence unit.Such as
Shown in Fig. 2 b and 3b.
(5) using negtive photoresist removing and electron beam evaporation Ag/Ni/TiW, the thickness difference 150/1/ of three-layer metal film
450nm, discoid positive electrode 10 is prepared in the rotary table MESA 81 of luminescence unit, and electrode diameter is 30 μm；In luminescence unit
Negative electrode 11 is prepared in n-type doping GaN material 4；Rectangular positive electrode pad 101 and negative electrode weldering are prepared in electrode pad region
Disk 111, bonding pad area are 120 × 360 μm2；And metal contact wires 12 are prepared, width is 20 μm；Metal contact wires 12 are distributed in
The SiO of strip2On dielectric insulation layer 9, the rotary table MESA of adjacent light-emitting units is extended to from the rotary table MESA 81 of luminescence unit
81.As shown in Fig. 2 c and 3c.
(6) SiO is prepared using plasma enhanced chemical vapor deposition2Medium mask layer 13 deposits at 350 DEG C
200nm, as shown in Fig. 2 d and 3d.
Then using electron beam resist in SiO2Glue mask layer, glue thickness 300nm are prepared on medium mask layer 13；Make again
Be aligned with electron beam exposure apparatus, and the active region of luminescence unit carry out photonic crystal pattern exposure, acceleration voltage 20KV,
Dosage 1.4C/m2, developed 35sec, it is fixed the airport for forming period profile after 30sec on electron beam resist；
Then using equipment for burning-off photoresist by plasma in O2It is handled under atmosphere, O2Flow 50sccm, radio-frequency power 50W handle the time
10sec removes the remaining electron beam resist in airport bottom；
It reuses sense coupling and the periodic pattern on electron beam resist is transferred to medium mask layer 13, under
Electrode radio-frequency power 100W, plasma rf power 400W, CHF3 50sccm, Ar 100sccm, time 4min30sec.
(7) sense coupling is used, periodic pattern is transferred to transparent electric current from medium mask layer 13 and is expanded
Open up layer ITO 8, lower electrode radio-frequency power 150W, plasma rf power 500W, BCl3 30sccm, Ar 60sccm, time
1min。
Sense coupling is reused, periodic pattern is transferred to semiconductor material GaN, lower electrode radio-frequency function
Rate 500W, plasma rf power 365W, Cl2 90sccm, BCl3 10 sccm, time 2min40sec, the quarter of GaN material
Lose depth 600nm.At this point, the SiO of 200nm thickness2Medium mask layer 13 is thinned into the SiO of 70nm2Medium mask layer 131.Such as figure
Shown in 2e and 3e.
(8) 10 couples of SiO are prepared in GaN base LED epitaxial wafer using optical coating apparatus2/Ta2O5The medium DBR of composition
15.At this point, the SiO of 70nm thickness2SiO is formed after depositing DBR on medium mask layer 142Medium mask layer 132.
(9) ultraviolet photolithographic and wet etching are used, in electrode pad region 16 exposing metal electrodes 101 and 111 of fluting.Such as
Shown in Fig. 2 f and 3f.
Claims (10)
1. a kind of inverted structure micro-dimension photonic crystal LED array chip, it is characterised in that: including four luminescence units, positive electricity
Pole pad and negative electrode pad, the positive electrode pad and negative electrode pad are distributed in the two sides of luminescence unit, four hairs
The positive electrode of adjacent light-emitting units is successively connected in parallel by metal contact wires in light unit, wherein one end and with positive electrode pad
Connection, is in 2 × 2 array distributions, and negative electrode and the negative electrode pad of the luminescence unit link together；From metal electrode to
Light exit direction, the active region of the luminescence unit successively include medium DBR, transparent current extending, p-type doped gan layer,
P-type adulterates AlGaN layer, quantum well layer, n-type doping GaN layer, unintentional doped gan layer, GaN buffer layer and jewel substrate；
The positive electrode area of the luminescence unit successively includes medium DBR, positive electrode, transparent current extending, p-type doping GaN
Layer, p-type doping AlGaN layer, quantum well layer, n-type doping GaN layer, unintentional doped gan layer, GaN buffer layer and sapphire lining
Bottom；
The negative electrode area of the luminescence unit successively includes medium DBR, negative electrode, n-type doping GaN layer, unintentional doping GaN
Layer, GaN buffer layer and Sapphire Substrate.
2. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: institute
It states and is isolated between metal contact wires and semiconductor material by dielectric insulation layer, the semiconductor material includes transparent current expansion
Layer, p-type doped gan layer, p-type adulterate AlGaN layer, quantum well layer, n-type doping GaN layer；The negative electrode of the luminescence unit covers
In n-type doping GaN layer upper surface, the active area diameter of the luminescence unit is 30~120 μm, and photonic crystal is distributed with, described
The depth of photonic crystal is greater than the depth of active layer, and diameter is 200~1000nm, in addition to positive electrode pad and negative electrode pad,
Medium DBR is all distributed in entire chip surface.
3. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: from
For metal electrode to light exit direction, electrode pad region successively includes metal electrode, n-type doping GaN layer, unintentional doping GaN
Layer, GaN buffer layer and Sapphire Substrate.
4. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: institute
Stating luminescence unit is frustum cone structure, and the positive electrode of the luminescence unit is in the form of annular discs, is distributed in the upper surface center of rotary table；It is described
The width of metal contact wires is greater than 20 μm；The negative electrode and negative electrode pad of the luminescence unit link together in the form of sheets,
And it is distributed around rotary table and dielectric insulation layer.
5. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: institute
Stating dielectric insulation layer is that strip is extended downwardly from the upper surface of the transparent current extending of luminescence unit along rotary table side wall
To the upper surface of n-type doping GaN material, transparent current extending is extended upwardly to further along the rotary table side wall of adjacent light-emitting units
Upper surface；The dielectric insulation layer material is SiO2, one or more of SiN, SiON, thickness is greater than 500nm, and width is greater than
20 μm of width or more of metal contact wires, metal contact wires are isolated with semiconductor material；The semiconductor material includes transparent
Current extending, p-type doped gan layer, p-type adulterate AlGaN layer, quantum well layer, n-type doping GaN layer.
6. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: institute
The single hole of photonic crystal is stated in rounding bench-type, the inclination angle between the side wall and top of rotary table is 65 °~85 °, distribution inside rotary table
There is dielectric film, the photonic crystal is triangular crystal lattice, tetragonal lattice or hexagonal lattice.
7. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: institute
Giving an account of matter DBR is SiO2/SiN、SiO2/Ta2O5、SiO2/HfO2Or SiO2/ZrO2, and first layer medium is SiO2Film.
8. a kind of inverted structure micro-dimension photonic crystal LED array chip according to claim 1, it is characterised in that: institute
State metal electrode and constitute metallic mirror, the metallic mirror includes reflecting layer, barrier layer and protective layer, the reflecting layer with
Barrier layer connects, and the barrier layer and protective layer connect, and the reflecting layer is Ag or Al, the barrier layer be Ni,
Cr or Ti, the protective layer are Au, TiN or TiW, and the metallic mirror is greater than in the reflectivity of the central wavelength of luminescence unit
95%。
9. a kind of preparation method of inverted structure micro-dimension photonic crystal LED array chip, which is characterized in that including following step
It is rapid:
Step 1 prepares GaN base LED epitaxial wafer, the structure of the GaN base LED epitaxial wafer using metal oxide vapor phase deposition method
It successively include Sapphire Substrate, GaN buffer layer, unintentional doped gan layer, n-type doping GaN layer, quantum well layer, p-type doping
AlGaN layer and p-type doped gan layer；
Step 2 deposits transparent current extending using electron beam evaporation in GaN base LED epitaxial wafer, forms Europe through short annealing
Nurse contact, reuses ultraviolet photolithographic and wet etching, forms the transparent current expansion being only distributed in the active region of luminescence unit
Layer disk；
Step 3, using sense coupling, exposure n-type doping GaN layer forms the frustum cone structure of luminescence unit；
Step 4, using plasma enhanced chemical vapor deposition preparation media insulating layer, reuse ultraviolet photolithographic and wet process be rotten
Erosion, forms the dielectric insulation layer of strip；
The dielectric insulation layer of strip from the upper surface of the transparent current extending on the rotary table of luminescence unit, along rotary table side wall to
Under extend to the upper surface of n-type doping GaN material, extend upwardly to transparent electric current further along the rotary table side wall of adjacent light-emitting units
The upper surface of extension layer；
Step 5, using negtive photoresist removing and electron beam evaporation, discoid positive electrode is prepared on the rotary table of luminescence unit, is being sent out
The negative electrode that sheet is prepared in the n-type doping GaN material of light unit, electrode pad region prepare rectangular positive electrode pad and
Negative electrode pad, and prepare the metal contact wires between positive electrode, between positive electrode and positive electrode pad；Metal contact wires distribution
On the dielectric insulation layer of strip；
Step 6, using plasma enhanced chemical vapor deposition preparation media mask layer, be then situated between using electron beam resist
Glue mask layer is prepared on matter mask layer, reuses electron beam exposure apparatus alignment, and carry out the period in the active region of luminescence unit
The exposure of pattern, it is developed, fixing after on electron beam resist formed period profile airport；Then plasma is used
Resist remover removes the remaining electron beam resist in airport bottom, reuses sense coupling for electron beam lithography
Periodic pattern on glue is transferred to medium mask layer；
Step 7, using sense coupling, periodic pattern is successively transferred to transparent electric current from medium mask layer and is expanded
Open up layer and GaN semiconductor material layer；The GaN semiconductor material includes p-type doped gan layer, p-type doping AlGaN layer, Quantum Well
Layer, n-type doping GaN layer；The etching depth of GaN semiconductor material is more than the depth 50nm or more of Quantum Well；
Step 8, using optical coating apparatus in GaN base LED epitaxial wafer preparation media DBR；
Step 9, using ultraviolet photolithographic and wet etching, in electrode pad region exposing metal electrode.
10. preparation method according to claim 9, it is characterised in that the annealing temperature of the rta technique is 500 ~
650 DEG C, heating rate is 5 ~ 15 DEG C/sec, and atmosphere is the gaseous mixture of nitrogen and oxygen, and annealing time is 60 ~ 300sec.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080011063A (en) * | 2006-07-27 | 2008-01-31 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Silicon led package having horn and contact edge with (111) planes |
| WO2009054160A1 (en) * | 2007-10-23 | 2009-04-30 | Sharp Kabushiki Kaisha | Backlight unit and display unit |
| US20100187966A1 (en) * | 2009-01-29 | 2010-07-29 | Seiko Epson Corporation | Light emitting device |
| CN101794805A (en) * | 2009-01-29 | 2010-08-04 | 精工爱普生株式会社 | Light receiving device |
| US20110044365A1 (en) * | 2009-08-21 | 2011-02-24 | National Chiao Tung University | Surface-emitting laser device |
| CN102064164A (en) * | 2010-10-28 | 2011-05-18 | 山东华光光电子有限公司 | Freely combined lamp wick of flip-chip power LED tube core |
| CN104037296A (en) * | 2013-03-07 | 2014-09-10 | 百士杰企业有限公司 | Light-emitting element and manufacturing method thereof |
| CN104538514A (en) * | 2014-12-31 | 2015-04-22 | 杭州士兰微电子股份有限公司 | Reverse LED chip structure and manufacturing method thereof |
| CN109119436A (en) * | 2018-09-29 | 2019-01-01 | 华南理工大学 | Nano-pore LED array chip of roughing in surface and preparation method thereof |
| CN109119519A (en) * | 2018-09-29 | 2019-01-01 | 华南理工大学 | The photonic crystal LED chip and preparation method thereof of ohm contact performance optimization |
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
| CN208861987U (en) * | 2018-09-29 | 2019-05-14 | 华南理工大学 | The nano-pore LED array chip of roughing in surface |
| CN209947839U (en) * | 2018-09-29 | 2020-01-14 | 华南理工大学 | Flip-chip structure micro-size photonic crystal LED array chip |
-
2018
- 2018-09-29 CN CN201811152566.0A patent/CN109216399A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080011063A (en) * | 2006-07-27 | 2008-01-31 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Silicon led package having horn and contact edge with (111) planes |
| WO2009054160A1 (en) * | 2007-10-23 | 2009-04-30 | Sharp Kabushiki Kaisha | Backlight unit and display unit |
| US20100187966A1 (en) * | 2009-01-29 | 2010-07-29 | Seiko Epson Corporation | Light emitting device |
| CN101794805A (en) * | 2009-01-29 | 2010-08-04 | 精工爱普生株式会社 | Light receiving device |
| US20110044365A1 (en) * | 2009-08-21 | 2011-02-24 | National Chiao Tung University | Surface-emitting laser device |
| CN102064164A (en) * | 2010-10-28 | 2011-05-18 | 山东华光光电子有限公司 | Freely combined lamp wick of flip-chip power LED tube core |
| CN104037296A (en) * | 2013-03-07 | 2014-09-10 | 百士杰企业有限公司 | Light-emitting element and manufacturing method thereof |
| CN104538514A (en) * | 2014-12-31 | 2015-04-22 | 杭州士兰微电子股份有限公司 | Reverse LED chip structure and manufacturing method thereof |
| CN109119436A (en) * | 2018-09-29 | 2019-01-01 | 华南理工大学 | Nano-pore LED array chip of roughing in surface and preparation method thereof |
| CN109119519A (en) * | 2018-09-29 | 2019-01-01 | 华南理工大学 | The photonic crystal LED chip and preparation method thereof of ohm contact performance optimization |
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
| CN208861987U (en) * | 2018-09-29 | 2019-05-14 | 华南理工大学 | The nano-pore LED array chip of roughing in surface |
| CN209947839U (en) * | 2018-09-29 | 2020-01-14 | 华南理工大学 | Flip-chip structure micro-size photonic crystal LED array chip |
Non-Patent Citations (1)
| Title |
|---|
| 彭静;徐智谋;吴小峰;孙堂友;: "纳米压印技术制备表面光子晶体LED的研究", 物理学报, no. 03 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
| CN112467018A (en) * | 2020-10-20 | 2021-03-09 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
| CN112467018B (en) * | 2020-10-20 | 2021-10-15 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
| CN112885936A (en) * | 2020-12-01 | 2021-06-01 | 北京工业大学 | Micro-LED array with transparent electrode structure and preparation method |
| CN112542533A (en) * | 2020-12-01 | 2021-03-23 | 北京大学 | High-photoelectric-conversion-rate inverted-structure deep ultraviolet micro-LED and preparation method thereof |
| CN112542533B (en) * | 2020-12-01 | 2023-04-14 | 北京大学 | High-photoelectric-conversion-rate inverted-structure deep ultraviolet micro-LED and preparation method thereof |
| CN113130528A (en) * | 2021-04-14 | 2021-07-16 | 东南大学 | Micro-LED chip structure and preparation method |
| CN113130528B (en) * | 2021-04-14 | 2023-07-25 | 东南大学 | Micro-LED chip structure and preparation method |
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