CN109207929A - A kind of porous periodic vanadium dioxide structure and preparation method thereof - Google Patents
A kind of porous periodic vanadium dioxide structure and preparation method thereof Download PDFInfo
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- CN109207929A CN109207929A CN201811209718.6A CN201811209718A CN109207929A CN 109207929 A CN109207929 A CN 109207929A CN 201811209718 A CN201811209718 A CN 201811209718A CN 109207929 A CN109207929 A CN 109207929A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
Abstract
The invention discloses a kind of porous periodic vanadium dioxide structures and preparation method thereof, periodic SiO2 array is formed using self-assembling technique, vanadium film is sputtered by the way of magnetron sputtering, then quick oxidizing annealing is carried out in quick anneal oven, it finally carries out acid corrosion and forms periodic nano particle VO2 structure, in the whole process without the compound introducing of other substances, preparation process is simple, it is easily controllable, realize the raising of VO2 smart window optical property.
Description
Technical field
The present invention relates to a kind of porous periodic vanadium dioxide structures and preparation method thereof.
Background technique
" 2013-2017 China's intelligent building industry market prospect and throwing by the publication of prediction industrial research institute in 2016
Provide strategical planning analysis report " it shows, the total amount of China's building energy consumption rises year by year, and accounting is up in energy wastage in bulk or weight
33%.As the continuous quickening of Development of China's Urbanization and the size of population constantly increase, urban architecture area is with annual 2000000000 square metres
Speed increase, if not taking effective Research on Energy Saving, this can aggravate the consumption of resource, serious to restrict China's sustainable development
Exhibition strategy, hinders resident to promote green city, the paces of green living.Wherein for proper temperature in regulation room, by heating and
The energy consumption of the refrigeration equipments such as air-conditioning accounts for about the 50% of total building energy consumption, and heat mainly passes through the periphery such as building wall, door and window, floor knot
Structure be lost to outside, among this window as building with the most important hot switching path of external environment, occupy building flow into or
Person is lost the 50% of heat, it may be said that window energy savings are the key links of building energy conservation.
Grow up recent years can the VO2 intelligent window of active response variation of ambient temperature receive production, teaching & research circle
Extensive concern.Vanadium dioxide (VO2) is a kind of temperature-sensitive material, can be occurred at 68 DEG C by semiconductor mutually changing to metal phase
Become, in phase transition process, crystal structure becomes high temperature four directions rutile structure from low temperature monocline rutile structure, before phase change rear VO2
Optically and electrically performance reversible rapid mutation occurs, especially occur in the transmission of near infrared band VO2 from highly transmissive to low
There are apparent on and off two states in the transformation of transmission.Due to this transmission transformation and transition temperature be not very high
Characteristic, VO2 at preparation smart window ideal material.
In order to make VO2 smart window really be widely used, the visible light transmittance of smart window must reach 60% with
On, sunlight is adjusted to efficiency and reaches 8% or more.At present domestic and international researcher be devoted to mostly using other antireflection materials with
VO2 carries out compound.Titanium dioxide, zinc oxide, which is equal to VO2 Film laminated, can effectively improve VO2 optical property, but improve
Amplitude is unobvious, still fails to the normal use for meeting VO2 smart window.By the porous VO2 of manufacturing cycle formula, change its own knot
Structure sets out to improve optical property and be one of the direction of present research VO2 smart window application, and rarely has pass through manufacturing cycle at present
Formula nanoparticle structure improves the report of VO2 smart window optical property to realize.
Summary of the invention
In order to solve the problems in the prior art, the present invention provides a kind of porous periodic vanadium dioxide structure and its preparation
Method solves traditional in the prior art to improve that VO2 smart window optical property is ineffective to ask in the way of laminated film etc.
Topic.
The technical scheme is that
A kind of porous periodic vanadium dioxide structure, is prepared by following methods:
(1) cleaning of sapphire substrates:
Sapphire sheet is sequentially placed into deionized water, acetone and dehydrated alcohol and is cleaned by ultrasonic respectively, surface is removed
Organic impurities；It is washed with deionized water, is finally put into sapphire substrate spare in dehydrated alcohol again；
(2) preparation of periodic SiO2 ball:
The SiO2 stoste of 0.18g/ml and dehydrated alcohol are made into suspension according to 1:6 ratio, the glass cleaned up
Drainage piece is inserted into deionized water surface, and SiO2 mixed solution is added dropwise on the glass sheet, forms SiO2 single layer arrangement array junctions
Structure immerses sapphire substrates to liquid level, is slowly lifted with plated film pulling machine, and pull rate is 20~150um/min, lifting
After form evenly distributed SiO2 periodic array structure on a sapphire substrate；
(3) vanadium film is prepared:
The substrate for the ball of SiO2 containing periodic array that step (2) obtains is placed in III type ultrahigh vacuum facing-target magnetron sputtering system of DPS-
The vacuum chamber of equipment, using quality purity is 99.95% vanadium metal as target, the argon gas for being 99.999% with quality purity
As working gas, the vanadium film that deposition thickness is 100 nanometers on surface；
(4) preparation of vanadium dioxide film:
Vanadium film made from step (3) is put in quick anneal oven and carries out quickly oxidation thermal annealing；
(5) preparation of vanadium dioxide nano particle:
The VO2 film that step (4) obtains is placed in the dilute nitric acid solution of 0.1mol/L, impregnates 0~8min, acid is handled
The VO2 nanoparticle structure being distributed to periodic, rinses sample surfaces using deionized water after immersion, washes off residual table
The impurity component in face.
A kind of preparation method of porous periodic vanadium dioxide structure, comprising the following steps:
(1) cleaning of sapphire substrates:
Sapphire sheet is sequentially placed into deionized water, acetone and dehydrated alcohol and is cleaned by ultrasonic respectively, surface is removed
Organic impurities；It is washed with deionized water, is finally put into sapphire substrate spare in dehydrated alcohol again；
(2) preparation of periodic SiO2 ball:
The SiO2 stoste of 0.18g/ml and dehydrated alcohol are made into suspension according to 1:6 ratio, the glass cleaned up
Drainage piece is inserted into deionized water surface, and SiO2 mixed solution is added dropwise on the glass sheet, forms SiO2 single layer arrangement array junctions
Structure immerses sapphire substrates to liquid level, is slowly lifted with plated film pulling machine, and pull rate is 20~150um/min, lifting
After form evenly distributed SiO2 periodic array structure on a sapphire substrate；
(3) vanadium film is prepared:
The substrate for the ball of SiO2 containing periodic array that step (2) obtains is placed in III type ultrahigh vacuum facing-target magnetron sputtering system of DPS-
The vacuum chamber of equipment, using quality purity is 99.95% vanadium metal as target, the argon gas for being 99.999% with quality purity
As working gas, the vanadium film that deposition thickness is 100 nanometers on surface；
(4) preparation of vanadium dioxide film:
Vanadium film made from step (3) is put in quick anneal oven and carries out quickly oxidation thermal annealing；
(5) preparation of vanadium dioxide nano particle:
The VO2 film that step (4) obtains is placed in the dilute nitric acid solution of 0.1mol/L, 0~8min, acid processing are impregnated
The VO2 nanoparticle structure of periodic distribution is obtained, sample surfaces is rinsed using deionized water after immersion, washes off residual
The impurity component on surface.
Step (3) sputtering condition is background vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow is
48mL/min, sputtering operating air pressure are 2Pa, sputtering power 150W, sputtering time 10min-25min.
The change rule of step (4) the quick anneal oven in-furnace temperature is divided into for heating, heat preservation, cool down three phases,
Gas flow is fixed as 7slpm when the gas being passed through when thermal oxide is high purity oxygen gas, heating and heat preservation, remaining phase gas flow
It is fixed as 10slpm, holding temperature is 480 DEG C, and heating rate is determined by setting holding temperature and heating-up time, and value is solid
It is set to 50 DEG C/s, heating-up time 9.6s, soaking time 70s-150s, temperature fall time 90s.
Compared with the prior art, the invention has the benefit that
1) the periodic vanadium oxide nanoparticle structure prepared, can improve its visible light transmittance and sun light modulation simultaneously
The method of ability is relatively simple, and the process conditions of control are less, and easily controllable.
2) then first splash-proofing sputtering metal vanadium film is carrying out thermal annealing, acid corrosion processing is finally being carried out, with practical plant produced
It is similar, it is suitble to produce in enormous quantities.
The present invention forms periodic SiO2 array using self-assembling technique, and vanadium film is sputtered by the way of magnetron sputtering,
Then quick oxidizing annealing is carried out in quick anneal oven, is finally carried out acid corrosion and is formed periodic nano particle VO2 structure,
There is no the compound introducing of other substances in whole process, preparation process is simple, and it is easily controllable, realize VO2 smart window optical property
Raising.
Detailed description of the invention
Fig. 1 is conventional planar VO2 membrane structure and periodic VO2 nanoparticle structure conceptual schematic view of the present invention；(a) it passes
System plane VO2 membrane structure, (b) periodic VO2 nanoparticle structure；
The variation diagram of the visible light transmittance of periodic nanoparticle structure VO2 after Fig. 2 different time acid corrosion；
The sunlight modulation efficiency variation diagram of periodic nanoparticle structure VO2 after Fig. 3 different time acid corrosion；
The coplanar VO2 Film Optics of periodic nanoparticle structure VO2 after the best etching time of Fig. 4 (6min) compares
Figure.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples, but embodiments of the present invention are unlimited
In this.
The raw materials used in the present invention is all made of commercially available material.
1) sapphire cleans
Sapphire used is the sapphire of double polishings of (001) crystal face bought on the market, with a thickness of 0.45mm, size
1cm*1cm.Sapphire sheet is once put into deionized water, acetone and dehydrated alcohol and is cleaned by ultrasonic respectively 20 minutes, is gone out
The organic impurities on surface；It is washed with deionized water, is finally put into sapphire substrate spare in dehydrated alcohol again.
2) preparation of periodic SiO2 ball
The SiO2 stoste of 300 nanometers of diameter bought in the market of 0.18g/ml and dehydrated alcohol are matched according to 1:6 ratio
At suspension, the glass drainage piece cleaned up is inserted into deionized water surface, SiO2 mixed solution is added dropwise in sheet glass
On, SiO2 single layer arrangement array structure is formed, sapphire substrates are immersed to liquid level, is slowly lifted, is mentioned with plated film pulling machine
Pulling rate degree is 20um/min, forms evenly distributed SiO2 periodic array structure after lifting on a sapphire substrate.
3) process conditions of vanadium film are prepared
Clean sapphire ball array substrate is placed in the vacuum chamber of III type ultrahigh vacuum facing-target magnetron sputtering system equipment of DPS-,
Using quality purity is 99.95% metal platinum as target, using the argon gas that quality purity is 99.999% as working gas,
Background vacuum 4.0 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min, sputtering operating air pressure is 2Pa,
Sputtering power 150W, sputtering time 10min are prepared into the V film with a thickness of 100nm.
4) preparation of vanadium dioxide film
It is made and is put in the quick oxidation thermal annealing of progress in quick anneal oven with a thickness of the vanadium film of 100nm.In-furnace temperature
Change rule to be divided into for heating, heat preservation, cooling three phases, the gas that when thermal oxide is passed through is high purity oxygen gas, heating and heat preservation
When gas flow be fixed as 7slpm, remaining phase gas flow is fixed as 10slpm, and holding temperature is 480 DEG C, and heating rate is logical
Setting holding temperature and heating-up time are spent to determine, value is fixed as 50 DEG C/s, heating-up time 9.6s, soaking time 40S, cooling
Time 90s.
5) preparation of vanadium dioxide nano particle
The concentrated nitric acid solution bought in the market is deployed into the dilute nitric acid solution of 0.1mol/L by a certain percentage, by previous step
Obtained VO2 film sample is placed in the dilute nitric acid solution of 0.1mol/L, impregnates 6min, and acid processing obtains periodic distribution
VO2 nanoparticle structure rinses sample surfaces using deionized water after immersion, washes off the impurity component of remaining surface.
Manufacturing cycle formula nano vanadium dioxide grain structure of the present invention is distinguished with the structure of traditional flat film such as 1 institute of attached drawing
Show, relative to conventional planar film, period nanoparticle structure VO2 of the invention is due to introducing antireflective substrate and porous nano
Structure shows excellent performance on optical properties.Attached drawing 2 and attached drawing 3 are simulation VO2 visible light transmittance and sunlight tune
To efficiency with the histogram of acid processing time change, wherein optical property reaches best when the acid processing time is 6min.It is attached
Fig. 4 is conventional planar VO2 film and period nano particle VO2 the structure of the invention spectrogram after before phase change respectively, is such as schemed
The visible light transmittance in shown present invention period nanoparticle structure VO2 is 60.1%, and sunlight modulation efficiency is 9.2%, is passed
Planar structure VO2 visible light transmittance of uniting is 34.3%, and it is 7.6% that sunlight, which is adjusted to efficiency, therefore week constructed by the present invention
Phase nanoparticle structure VO2 can more preferably meet the use standard of VO2 smart window, and application advantage is obvious.
It is all using made by description of the invention and accompanying drawing content the foregoing is merely the preferred embodiment of the present invention
Several improvement or deformation, being applied directly or indirectly in other relevant technical fields, also should be regarded as protects in patent of the invention
It protects in range.
Claims (6)
1. a kind of porous periodic vanadium dioxide structure, which is characterized in that prepared by following methods:
(1) cleaning of sapphire substrates:
Sapphire sheet is sequentially placed into deionized water, acetone and dehydrated alcohol and is cleaned by ultrasonic respectively, the organic of surface is removed
Impurity；It is washed with deionized water, is finally put into sapphire substrate spare in dehydrated alcohol again；
(2) preparation of periodic SiO2 ball:
The SiO2 stoste of 0.18g/ml and dehydrated alcohol are made into suspension according to 1:6 ratio, the glass cleaned up is drained
Piece is inserted into deionized water surface, and SiO2 mixed solution is added dropwise on the glass sheet, forms SiO2 single layer arrangement array structure, will
Sapphire substrates are immersed to liquid level, are slowly lifted with plated film pulling machine, and pull rate is 20~150um/min, and lifting finishes
Form evenly distributed SiO2 periodic array structure on a sapphire substrate afterwards；
(3) vanadium film is prepared:
The substrate for the ball of SiO2 containing periodic array that step (2) obtains is placed in III type ultrahigh vacuum facing-target magnetron sputtering system equipment of DPS-
Vacuum chamber, using quality purity is 99.95% vanadium metal as target, using the argon gas that quality purity is 99.999% as
Working gas, the vanadium film that deposition thickness is 100 nanometers on surface；
(4) preparation of vanadium dioxide film:
Vanadium film made from step (3) is put in quick anneal oven and carries out quickly oxidation thermal annealing；
(5) preparation of vanadium dioxide nano particle:
The VO2 film that step (4) obtains is placed in the dilute nitric acid solution of 0.1mol/L, 0~8min is impregnated, acid processing obtains
The VO2 nanoparticle structure of periodic distribution, rinses sample surfaces using deionized water after immersion, washes off remaining surface
Impurity component.
2. porous periodic vanadium dioxide structure according to claim 1, which is characterized in that step (3) sputtering condition
For background vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min, sputtering operating air pressure is 2Pa,
Sputtering power 150W, sputtering time 10min-25min.
3. porous periodic vanadium dioxide structure according to claim 1, which is characterized in that step (4) short annealing
The change rule of furnace in-furnace temperature is divided into for heating, heat preservation, cooling three phases, and the gas that when thermal oxide is passed through is high pure oxygen
Gas flow is fixed as 7slpm when gas, heating and heat preservation, remaining phase gas flow is fixed as 10slpm, holding temperature 480
DEG C, heating rate determines that value is fixed as 50 DEG C/s, heating-up time 9.6s by setting holding temperature and heating-up time, protects
Warm time 70s-150s, temperature fall time 90s.
4. a kind of preparation method of porous periodic vanadium dioxide structure, which comprises the following steps:
(1) cleaning of sapphire substrates:
Sapphire sheet is sequentially placed into deionized water, acetone and dehydrated alcohol and is cleaned by ultrasonic respectively, the organic of surface is removed
Impurity；It is washed with deionized water, is finally put into sapphire substrate spare in dehydrated alcohol again；
(2) preparation of periodic SiO2 ball:
The SiO2 stoste of 0.18g/ml and dehydrated alcohol are made into suspension according to 1:6 ratio, the glass cleaned up is drained
Piece is inserted into deionized water surface, and SiO2 mixed solution is added dropwise on the glass sheet, forms SiO2 single layer arrangement array structure, will
Sapphire substrates are immersed to liquid level, are slowly lifted with plated film pulling machine, and pull rate is 20~150um/min, and lifting finishes
Form evenly distributed SiO2 periodic array structure on a sapphire substrate afterwards；
(3) vanadium film is prepared:
The substrate for the ball of SiO2 containing periodic array that step (2) obtains is placed in III type ultrahigh vacuum facing-target magnetron sputtering system equipment of DPS-
Vacuum chamber, using quality purity is 99.95% vanadium metal as target, using the argon gas that quality purity is 99.999% as
Working gas, the vanadium film that deposition thickness is 100 nanometers on surface；
(4) preparation of vanadium dioxide film:
Vanadium film made from step (3) is put in quick anneal oven and carries out quickly oxidation thermal annealing；
(5) preparation of vanadium dioxide nano particle:
The VO2 film that step (4) obtains is placed in the dilute nitric acid solution of 0.1mol/L, 0~8min is impregnated, acid processing obtains
The VO2 nanoparticle structure of periodic distribution, rinses sample surfaces using deionized water after immersion, washes off remaining surface
Impurity component.
5. the preparation method of porous periodic vanadium dioxide structure according to claim 4, which is characterized in that the step
(3) sputtering condition is background vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min sputters work
Making air pressure is 2Pa, sputtering power 150W, sputtering time 10min-25min.
6. the preparation method of porous periodic vanadium dioxide structure according to claim 4, which is characterized in that the step
(4) the change rule of quick anneal oven in-furnace temperature is divided into for heating, heat preservation, cooling three phases, the gas that when thermal oxide is passed through
Body is high purity oxygen gas, and gas flow is fixed as 7slpm when heating up and keeping the temperature, remaining phase gas flow is fixed as 10slpm, is protected
Temperature is 480 DEG C, and heating rate determines that value is fixed as 50 DEG C/s by setting holding temperature and heating-up time, heating
Time 9.6s, soaking time 70s-150s, temperature fall time 90s.
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| CN110850606A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院物理研究所 | Dynamic adjustable structural color device based on phase-change material and preparation method thereof |
| CN111411334A (en) * | 2020-02-29 | 2020-07-14 | 天津大学 | Silicon dioxide-vanadium dioxide multistage array structure and preparation method thereof |
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| CN110451817A (en) * | 2019-07-30 | 2019-11-15 | 电子科技大学 | A kind of intelligent fenestrated membrane and preparation method thereof based on vanadium dioxide and metamaterial structure |
| CN110451817B (en) * | 2019-07-30 | 2021-06-15 | 电子科技大学 | Intelligent window film based on vanadium dioxide and metamaterial structure and preparation method thereof |
| CN110850606A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院物理研究所 | Dynamic adjustable structural color device based on phase-change material and preparation method thereof |
| CN111411334A (en) * | 2020-02-29 | 2020-07-14 | 天津大学 | Silicon dioxide-vanadium dioxide multistage array structure and preparation method thereof |
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Application publication date: 20190115 |