CN109200748B - High-sensitivity toxic gas sensor and preparation method thereof - Google Patents

High-sensitivity toxic gas sensor and preparation method thereof Download PDF

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CN109200748B
CN109200748B CN201811062453.1A CN201811062453A CN109200748B CN 109200748 B CN109200748 B CN 109200748B CN 201811062453 A CN201811062453 A CN 201811062453A CN 109200748 B CN109200748 B CN 109200748B
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toxic gas
gas sensor
metal
layer
sulfur
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CN109200748A (en
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杨国锋
汪金
楚广勇
薛俊俊
昌建军
王昱
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Nanjing Nuoruixin Electronic Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/0407—Constructional details of adsorbing systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/0407—Constructional details of adsorbing systems
    • B01D53/0446—Means for feeding or distributing gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/104—Alumina
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/112—Metals or metal compounds not provided for in B01D2253/104 or B01D2253/106
    • B01D2253/1128—Metal sulfides

Abstract

The invention discloses a high-sensitivity toxic gas sensor and a preparation method thereof, and belongs to the technical field of physical detection. The sensor of the invention utilizes the characteristic that the edge adsorption effect of a two-dimensional material is obviously superior to that of the surface, and the two-dimensional transition metal sulfur/selenide layer is designed into a multilayer vertical arrangement structure, so that the lowest detection limit can reach 0.01 ppm; the preparation method overcomes the technical difficulty of preparing the two-dimensional transition metal sulfur/selenide with a multi-layer vertical arrangement structure, and provides a new idea for the field of toxic gas detection.

Description

High-sensitivity toxic gas sensor and preparation method thereof
Technical Field
The invention relates to a high-sensitivity toxic gas sensor and a preparation method thereof, belonging to the technical field of physical detection.
Background
Toxic gases such as nitric oxide, nitrogen dioxide and ammonia gas are one of the main causes of acid rain, and cause serious harm to people and environment. When the concentration of nitrogen dioxide in the air exceeds 53ppb, the probability of a child causing serious respiratory diseases will increase greatly. Therefore, the rapid and accurate detection of these harmful gases is critical to the fields of people's healthy life, industrial production, agricultural supervision, and the like.
At present, for toxic gases such as nitric oxide and nitrogen dioxide, toxic gas sensors made of two-dimensional materials have been developed, and the detection of specific gas molecules is realized by using the characteristic that gas molecules are adsorbed on the surface of the two-dimensional materials through the physical adsorption (van der waals force) effect and the characteristic that part of gas molecules can regulate and control the electrical performance of the two-dimensional materials in cooperation with a method for measuring current. The toxic gas sensor prepared from the two-dimensional material can directly detect harmful gas at room temperature, and has the advantages of simplicity in operation, easiness in carrying and the like.
However, the existing toxic gas sensor prepared by using two-dimensional materials usually adopts two-dimensional materials with a horizontal arrangement structure, because the surface of the two-dimensional materials with the horizontal structure has no dangling bonds, the dangling bonds exist only in the edge area of the two-dimensional materials, the interaction between gas molecules and the gas molecules mainly depends on van der waals force, and the action effect of the van der waals force is weaker, so that the detection sensitivity, the detection limit and the like of the gas sensor are lower than those of the gas sensor with the vertical structure.
At present, toxic gas sensors often use two-dimensional materials such as: two-dimensional transition metal sulfur/selenide and the like have been proved to be capable of effectively detecting nitric oxide, nitrogen dioxide and ammonia gas, and the sensitivity, the accuracy and the lowest detection limit of the toxic gas sensor can be optimized according to the characteristic of the two-dimensional transition metal sulfur/selenide.
However, since it is difficult to prepare the two-dimensional material layer with the vertically arranged structure in the prior art, the preparation of the toxic gas sensor comprising the two-dimensional material layer with the vertically arranged structure still needs to be further studied, and whether the effects of optimizing the sensitivity and accuracy of the toxic gas sensor and the minimum detection limit can be finally achieved still needs to be further verified.
Disclosure of Invention
In order to solve the problems, the invention provides a high-sensitivity toxic gas sensor and a preparation method thereof. The sensor of the invention utilizes the characteristic that the edge adsorption effect of a two-dimensional material is obviously superior to that of the surface, and the two-dimensional transition metal sulfur/selenide layer is designed into a multilayer vertical arrangement structure, so that the sensitivity and the lowest detection limit of the sensor are superior to those of the gas sensor prepared by the same material with the current horizontal structure; the preparation method overcomes the technical difficulty of preparing the two-dimensional transition metal sulfur/selenide with a multi-layer vertical arrangement structure, and provides a new idea for the field of toxic gas detection.
The technical scheme of the invention is as follows:
the invention provides a high-sensitivity toxic gas sensor, which comprises a semiconductor substrate (1), a metal-semiconductor barrier layer (2), a two-dimensional transition metal sulfur/selenide layer (3), a metal electrode (4) and a metal passivation layer (5);
the toxic gas comprises nitric oxide, nitrogen dioxide and ammonia gas;
the two-dimensional transition metal sulfur/selenide layer (3) is composed of a plurality of layers of two-dimensional transition metal sulfur/selenide with a vertical arrangement structure;
a semiconductor substrate (1), a metal-semiconductor barrier layer (2), a two-dimensional transition metal sulfur/selenide layer (3), a metal electrode (4) and a metal passivation layer (5) in the toxic gas sensor are sequentially arranged and laid according to the sequence from bottom to top.
In one embodiment of the invention, the material of the semiconductor substrate (1) is sapphire, silicon, gallium nitride, gallium arsenide, aluminum nitride or spinel.
In one embodiment of the invention, the material of the semiconductor substrate (1) is silicon.
In one embodiment of the invention, the thickness of the semiconductor substrate (1) is 200-500 nm.
In one embodiment of the invention, the material of the metal-semiconductor barrier layer (2) is SiO2。
In one embodiment of the present invention, the thickness of the metal-semiconductor barrier layer (2) is 200-500 nm.
In one embodiment of the invention, the two-dimensional transition metal sulfur/selenide layer (3) is composed of molybdenum disulfide in a multilayer vertically aligned structure.
In one embodiment of the invention, the thickness of the two-dimensional transition metal sulfur/selenide layer (3) is 8-15 nm.
In one embodiment of the invention, the material of the metal electrode (4) is gold (Au).
In one embodiment of the invention, the metal electrodes (4) are interdigital electrodes or circular electrodes.
In one embodiment of the invention, the thickness of the metal electrode (4) is 300 nm.
In one embodiment of the invention, the material of the metal passivation layer (5) is SiO2。
In one embodiment of the invention, the thickness of the metal passivation layer (5) is 100 nm.
The invention provides a preparation method of the high-sensitivity toxic gas sensor, which comprises the following steps:
step 1: preparing a semiconductor substrate (1), and depositing a metal-semiconductor barrier layer (2) with a certain thickness above the semiconductor substrate (1);
step 2: evaporating a layer of metal by an electron beam above the metal-semiconductor barrier layer (2) in the step (1), and carrying out sulfur/selenization treatment on the layer of metal to obtain a two-dimensional transition metal sulfur/selenide layer (3) with a multi-layer vertical arrangement structure;
and step 3: spin-coating a photoresist (6) on the two-dimensional transition metal sulfur/selenide layer (3) in the step (2), photoetching the photoresist (6) to obtain a template, and etching the two-dimensional transition metal sulfur/selenide layer (3) through the template to obtain the two-dimensional transition metal sulfur/selenide layer (3) with a certain shape;
and 4, step 4: removing the residual photoresist (6) in the step (3), and depositing a metal electrode (4) above the two-dimensional transition metal sulfur/selenide layer (3) with a certain shape;
and 5: and (4) depositing a metal passivation layer (5) with a certain thickness above the metal electrode (4) in the step (4) to obtain the toxic gas sensor with high sensitivity.
In one embodiment of the invention, in the step 2, the temperature of the reaction zone for obtaining the two-dimensional transition metal sulfur/selenide layer (3) with the multilayer vertical arrangement structure is controlled to be 770 ℃, and the heating temperature for sulfur powder is controlled to be 220 ℃.
The invention provides a toxic gas detection device, which is characterized by comprising the high-sensitivity toxic gas sensor.
The invention provides the application of the toxic gas sensor or the toxic gas detection device prepared by the preparation method of the high-sensitivity toxic gas sensor or the high-sensitivity toxic gas sensor in gas detection.
Has the advantages that:
(1) the sensor of the invention utilizes the characteristic that the edge adsorption effect of a two-dimensional material is obviously superior to that of the surface, and the two-dimensional transition metal sulfur/selenide layer is designed into a multilayer vertical arrangement structure, so that the sensitivity and the lowest detection limit of the sensor are superior to those of the gas sensor prepared by the same material with the current horizontal structure;
(2) the lowest detection limit of the sensor can reach 0.01 ppm;
(3) the preparation method overcomes the technical difficulty of obtaining the two-dimensional transition metal sulfide/selenide with a multilayer vertical arrangement structure by a sulfur/selenization treatment technical means, and provides a new idea for the field of toxic gas detection;
(4) the toxic gas sensor provided by the invention has the advantages of simple operation, easiness in carrying and the like, and can be used for directly detecting harmful gas at room temperature.
Drawings
FIG. 1 is a front view of a toxic gas sensor of the present invention;
FIG. 2 is a top view of a toxic gas sensor of the present invention;
FIG. 3 shows a vertical MoS structure of the toxic gas sensor according to the present invention2Electron micrographs of (A);
FIG. 4 shows a horizontal MoS structure of a conventional toxic gas sensor2Electron micrographs of (A);
the device comprises a semiconductor substrate 1, a metal-semiconductor barrier layer 2, a two-dimensional transition metal sulfur/selenide layer 3, a metal electrode 4 and a metal passivation layer 5.
Detailed Description
The present invention will be further explained by taking three toxic gases, namely nitric oxide, nitrogen dioxide and ammonia gas, as examples, and combining the drawings and the examples.
Referring to fig. 1-2, the high-sensitivity toxic gas sensor of the present invention comprises a semiconductor substrate 1, a metal-semiconductor barrier layer 2, a two-dimensional transition metal sulfur/selenide layer 3, a metal electrode 4, and a metal passivation layer 5;
the toxic gas comprises nitric oxide, nitrogen dioxide and ammonia gas;
the two-dimensional transition metal sulfur/selenide layer 3 is composed of a plurality of layers of two-dimensional transition metal sulfur/selenide with a vertical arrangement structure;
the semiconductor substrate 1, the metal-semiconductor barrier layer 2, the two-dimensional transition metal sulfur/selenide layer 3, the metal electrode 4 and the metal passivation layer 5 in the toxic gas sensor are sequentially arranged and laid according to the sequence from bottom to top.
Preferably, the material of the semiconductor substrate 1 is sapphire, silicon, gallium nitride, gallium arsenide, aluminum nitride, or spinel.
Preferably, the material of the semiconductor substrate 1 is silicon.
Preferably, the thickness of the semiconductor substrate 1 is 200-500 nm.
Preferably, the material of the metal-semiconductor barrier layer 2 is SiO2。
Preferably, the thickness of the metal-semiconductor barrier layer 2 is 200-500 nm.
Preferably, the two-dimensional transition metal sulfur/selenide layer 3 is composed of molybdenum disulfide in a multi-layered vertically aligned structure.
Preferably, the thickness of the two-dimensional transition metal sulfur/selenide layer 3 is 8 to 15 nm.
Preferably, the material of the metal electrode 4 is gold (Au).
Preferably, the metal electrodes 4 are interdigital electrodes or circular electrodes.
Preferably, the thickness of the metal electrode 4 is 300 nm.
Preferably, the material of the metal passivation layer 5 is SiO2。
Preferably, the thickness of the metal passivation layer 5 is 100 nm.
The detection methods referred to in the following examples are as follows:
the detection method of the lowest detection limit comprises the following steps: setting probes at two ends of an electrode of the toxic gas sensor, placing the toxic gas sensor in a closed container, controlling the concentration of gas in the closed container through a flowmeter, introducing nitric oxide, nitrogen dioxide and ammonia gas with the concentration of 0.10ppm into the closed container, keeping the time of the gas in the closed container for 10 minutes, applying voltage at two ends of the probes, and detecting the current passing through the gas sensor; if the detection can be carried out, respectively introducing nitric oxide, nitrogen dioxide and ammonia gas with the concentrations of 0ppm, 0.01ppm, 0.02ppm, 0.03ppm, 0.04ppm, 0.05ppm, 0.06ppm, 0.07ppm, 0.08ppm and 0.09ppm into a closed container, applying voltage to two ends of a probe, and detecting the current passing through the gas sensor;
if the detection can not be carried out, introducing nitric oxide, nitrogen dioxide and ammonia gas with the concentration of 1.0ppm into a closed container, keeping the time of the gas in the closed container for 10 minutes, applying voltage to two ends of a probe, and detecting the current passing through the gas sensor; if the detection result is detected, respectively introducing nitric oxide, nitrogen dioxide and ammonia gas with the concentrations of 0.20ppm, 0.30ppm, 0.40ppm, 0.50ppm, 0.60ppm, 0.70ppm, 0.80ppm and 0.90ppm into a closed container, applying voltage to two ends of a probe, and detecting the current passing through the gas sensor;
if the detection can not be carried out, introducing nitric oxide, nitrogen dioxide and ammonia gas with the concentration of 10.0ppm into a closed container, keeping the time of the gas in the closed container for 10 minutes, applying voltage to two ends of a probe, and detecting the current passing through the gas sensor; if the detection result is detected, respectively introducing nitric oxide, nitrogen dioxide and ammonia gas with the concentrations of 2.0ppm, 3.0ppm, 4.0ppm, 5.0ppm, 6.0ppm, 7.0ppm, 8.0ppm and 9.0ppm into a closed container, applying voltage at two ends of a probe, and detecting the current passing through the gas sensor;
and the rest can be done in the same way until the accurate detection limit is obtained.
Example 1: preparation of high-sensitivity toxic gas sensor
The preparation steps are as follows:
step 1: preparing silicon into a silicon wafer with the thickness of 500 mu m as a semiconductor substrate, and depositing SiO with the thickness of 200 mu m on the silicon wafer2A barrier layer;
step 2: SiO in step 12A layer of molybdenum metal with the thickness of 10nm is evaporated on the barrier layer by using electron beams, and the molybdenum metal is vulcanized to obtain a molybdenum disulfide layer with the thickness of about 15nm and a multi-layer vertical arrangement structure (in the vulcanization treatment,the temperature of the reaction zone is controlled to be 770 ℃, and the heating temperature of the sulfur powder is controlled to be 220 ℃);
and step 3: spin-coating photoresist on the molybdenum disulfide layer in the step 2, photoetching the photoresist to obtain a template, and etching the molybdenum disulfide layer through the template to obtain a molybdenum disulfide layer with a certain shape;
and 4, step 4: removing the residual photoresist in the step (3), and depositing an Au electrode with the thickness of 300nm above the molybdenum disulfide layer with a certain shape;
and 5: deposition of SiO with a thickness of 100nm over the Au electrode of step 42And passivating the layer to obtain the toxic gas sensor with high sensitivity.
And observing the obtained toxic gas sensor under an electron microscope (as shown in figure 3), and detecting the sensitivity and the lowest detection limit. (results are shown in Table 1)
TABLE 1 lowest detection Limit results
Minimum limit of detection
NO 0.1ppm
NO2 0.1ppm
NH3 0.2ppm
Comparative example 1: preparation of conventional toxic gas sensor (CVD method)
The preparation steps are as follows:
step 1: will be provided withPreparing silicon into 500 μm thick silicon wafer as semiconductor substrate, and depositing 200 μm thick SiO on the silicon wafer2A barrier layer;
step 2: placing the ceramic boat containing sulfur powder at the upstream of the tube furnace, placing the ceramic boat containing molybdenum trioxide at the downstream of the tube furnace, and placing the SiO powder obtained in the step (1)2Placing the barrier layer beside a ceramic boat filled with molybdenum trioxide, introducing Ar (70sccm) as protective gas one hour before reaction, and heating the upstream and the downstream of the tube furnace simultaneously, wherein the upstream is heated to 160 ℃ at the speed of 2.7 ℃/min, and the downstream is heated to 650 ℃ at the speed of 10.7 ℃/min, so as to obtain a molybdenum disulfide layer with a multilayer horizontal arrangement structure of about 10 nm;
and step 3: spin-coating photoresist on the molybdenum disulfide layer in the step 2, photoetching the photoresist to obtain a template, and etching the molybdenum disulfide layer through the template to obtain a molybdenum disulfide layer with a certain shape;
and 4, step 4: removing the residual photoresist in the step (3), and depositing an Au electrode with the thickness of 300nm above the molybdenum disulfide layer with a certain shape;
and 5: deposition of SiO with a thickness of 100nm over the Au electrode of step 42And passivating the layer to obtain the toxic gas sensor with high sensitivity.
And observing the obtained toxic gas sensor under an electron microscope (as shown in figure 4), and detecting the sensitivity and the lowest detection limit. (results are shown in Table 2)
TABLE 2 lowest detection Limit results
Minimum limit of detection
NO 0.5ppm
NO2 0.8ppm
NH3 1ppm
Although the present invention has been described with reference to the preferred embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (20)

1. A toxic gas sensor comprising a semiconductor substrate (1), a metal-semiconductor barrier layer (2), a two-dimensional transition metal sulfur/selenide layer (3), a metal electrode (4), and a metal passivation layer (5);
the toxic gas comprises nitric oxide, nitrogen dioxide and ammonia gas;
the two-dimensional transition metal sulfur/selenide layer (3) is composed of a plurality of layers of two-dimensional transition metal sulfur/selenide with a vertical arrangement structure;
a semiconductor substrate (1), a metal-semiconductor barrier layer (2), a two-dimensional transition metal sulfur/selenide layer (3), a metal electrode (4) and a metal passivation layer (5) in the toxic gas sensor are sequentially arranged and laid according to the sequence from bottom to top.
2. A toxic gas sensor according to claim 1, wherein the semiconductor substrate (1) is of sapphire, silicon, gallium nitride, gallium arsenide, aluminum nitride or spinel.
3. A toxic gas sensor according to claim 1 or 2, wherein the metal-semiconductor barrier layer (2) is of SiO2。
4. A toxic gas sensor according to claim 1 or 2, wherein the two-dimensional transition metal sulfur/selenide layer (3) is formed of molybdenum disulfide in a multi-layered vertically aligned structure.
5. A toxic gas sensor according to claim 3, wherein the two-dimensional transition metal sulfur/selenide layer (3) is formed of a plurality of layers of molybdenum disulfide in a vertically aligned configuration.
6. A toxic gas sensor according to claim 1 or 2, wherein the metal electrode (4) is made of gold (Au).
7. A toxic gas sensor according to claim 3, wherein the metal electrode (4) is made of gold (Au).
8. A toxic gas sensor as claimed in claim 4, wherein the metal electrode (4) is gold (Au).
9. A toxic gas sensor as claimed in claim 5, wherein the metal electrode (4) is gold (Au).
10. A toxic gas sensor according to claim 1 or 2, wherein the material of the metal passivation layer (5) is SiO2。
11. A toxic gas sensor according to claim 3, wherein the material of the metal passivation layer (5) is SiO2。
12. A toxic gas sensor according to claim 4, wherein the material of the metal passivation layer (5) is SiO2。
13. A toxic gas as claimed in claim 5The sensor is characterized in that the material of the metal passivation layer (5) is SiO2。
14. A toxic gas sensor according to claim 6, wherein the material of the metal passivation layer (5) is SiO2。
15. A toxic gas sensor according to claim 7, wherein the material of the metal passivation layer (5) is SiO2。
16. The toxic gas sensor according to claim 8, wherein the material of the metal passivation layer (5) is SiO2。
17. A toxic gas sensor according to claim 9, wherein the material of the metal passivation layer (5) is SiO2。
18. The method of making a toxic gas sensor of any one of claims 1-17, comprising the steps of:
step 1: preparing a semiconductor substrate (1), and depositing a metal-semiconductor barrier layer (2) with a certain thickness above the semiconductor substrate (1);
step 2: evaporating a layer of metal by an electron beam above the metal-semiconductor barrier layer (2) in the step (1), and carrying out sulfur/selenization treatment on the layer of metal to obtain a two-dimensional transition metal sulfur/selenide layer (3) with a multi-layer vertical arrangement structure;
and step 3: spin-coating a photoresist (6) on the two-dimensional transition metal sulfur/selenide layer (3) in the step (2), photoetching the photoresist (6) to obtain a template, and etching the two-dimensional transition metal sulfur/selenide layer (3) through the template to obtain the two-dimensional transition metal sulfur/selenide layer (3) with a certain shape;
and 4, step 4: removing the residual photoresist (6) in the step (3), and depositing a metal electrode (4) above the two-dimensional transition metal sulfur/selenide layer (3) with a certain shape;
and 5: and (4) depositing a metal passivation layer (5) with a certain thickness above the metal electrode (4) in the step (4) to obtain the toxic gas sensor.
19. A toxic gas detecting apparatus, comprising a toxic gas sensor according to any one of claims 1 to 17.
20. Use of a toxic gas sensor according to any one of claims 1 to 17 or a toxic gas sensor prepared by the method of claim 18 or a toxic gas sensing device according to claim 19 for gas sensing.
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